CN112947667B - Band-gap reference voltage source circuit - Google Patents

Band-gap reference voltage source circuit Download PDF

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CN112947667B
CN112947667B CN202110276278.1A CN202110276278A CN112947667B CN 112947667 B CN112947667 B CN 112947667B CN 202110276278 A CN202110276278 A CN 202110276278A CN 112947667 B CN112947667 B CN 112947667B
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triode
resistor
circuit
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base
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CN112947667A (en
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魏琦
周斌
邹军军
李享
纪峰
褚弘扬
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Tsinghua University
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation

Abstract

The invention relates to a band-gap reference voltage source circuit, comprising: the circuit comprises a core circuit, a negative feedback loop, a current mirror structure and a starting circuit; the core circuit is used for generating band-gap voltage, the input end of the core circuit is connected with the starting circuit, the output end of the core circuit is connected with the current mirror structure, and the output driving capability of the voltage source circuit is increased through the current mirror structure; and the negative feedback loop is arranged between the core circuit and the starting circuit as well as between the core circuit and the current mirror structure, and the stability of the output voltage is ensured by the negative feedback loop. The band-gap reference voltage source is processed by a CMOS process, and the voltage source circuit can effectively increase the loading capacity and reduce the temperature coefficient of output voltage on the basis of reducing the output noise, and has the advantages of low output noise, low temperature coefficient and high output driving capacity. The invention can be widely applied to the ultra-large scale integrated circuit in the fields of microelectronics and solid electronics.

Description

Band-gap reference voltage source circuit
Technical Field
The invention relates to a super-large-scale integrated circuit in the fields of microelectronics and solid electronics, in particular to a band-gap reference voltage source circuit with large output driving capability and low output noise.
Background
The bandgap reference voltage source is often applied to an analog circuit, a digital-analog hybrid circuit, for example, as a bias voltage source of an operational amplifier, as a reference voltage source of a data converter, and the like, since it can output a stable voltage value under the condition of a power supply voltage and temperature variation. With the rapid development of integrated circuits, the requirements for circuit accuracy are increasing. The accuracy of the reference voltage source directly affects the accuracy of the data converter, so the demand of a low-noise reference voltage source is also extremely urgent in recent years.
In response to the requirement of low noise voltage reference, Analog Devices corporation published 2008 a paper "a 37nV/sqrtHz 2.5V reference based on dual-threshold JFET technology", which mentions a method of generating a bandgap voltage by using a dual-threshold JFET transistor instead of a MOS transistor and a triode, wherein the dual-threshold JFET transistor has a low temperature coefficient, so that a small matching current is required to generate the bandgap voltage, thereby realizing low noise, but the dual-threshold JFET transistor needs a special process for processing.
Meanwhile, the output driving capability of the band-gap reference voltage source is weak, so that the band-gap reference voltage source has better carrying capability only by connecting a buffer at the output end; the output buffer can directly introduce a noise source at the output end, and the band-gap voltage source with large output driving capability can reduce the source of circuit noise.
Disclosure of Invention
In view of the above problems, it is an object of the present invention to provide a bandgap reference voltage source circuit with large output driving capability and low output noise, which has low output noise, low temperature coefficient and large output driving capability.
In order to achieve the purpose, the invention adopts the following technical scheme: a bandgap reference voltage source circuit, comprising: the circuit comprises a core circuit, a negative feedback loop, a current mirror structure and a starting circuit; the core circuit is used for generating band-gap voltage, the input end of the core circuit is connected with the starting circuit, the output end of the core circuit is connected with the current mirror structure, and the output driving capability of the voltage source circuit is increased through the current mirror structure; and the negative feedback loop is arranged between the core circuit and the starting circuit as well as between the core circuit and the current mirror structure, and the stability of the output voltage is ensured by the negative feedback loop.
Further, the core circuit includes a first resistor R1A second resistance R2Third resistor R3A first triode Q1And a second triode Q2(ii) a The first resistor R1First terminal of and the second resistor R2Is connected to the first terminal of the first resistor R1First terminal of and the second resistor R2Is connected to serve as the output terminal of the core circuit; the first resistor R1And the second terminal of the first triode Q1The base electrode of (2), the third resistor R3Are connected with each other; the third resistor R3And the second terminal of the first triode Q1Is connected with the collector of the first triode Q1Emitter electrode ofA ground; the second resistor R2And the second terminal of the second triode Q2Is connected with the collector of the second triode Q2Base of and the first triode Q1Is connected with the collector of the second triode Q2The emitter of (2) is grounded.
Further, the third resistor R3The voltage difference between the two ends is equal to that of the first triode Q1And the base-emitter voltage of the second triode Q2Of the base-emitter voltage difference Δ VBE。
Further, the second triode Q2Of the base-emitter voltage difference Δ VBEComprises the following steps:
Figure BDA0002976770900000021
where k is Boltzmann's constant, T is absolute temperature, q is the amount of charge of a single electron, IC1、IC2Is the first triode Q1And the second triode Q2Collector current of A1、A2Is the first triode Q1And the second triode Q2Emitter cross-sectional area, VBE1、VBE2Respectively, the first triode Q1The second triode Q2Base-emitter voltage.
Further, the output end voltage V of the core circuitoutComprises the following steps:
Figure BDA0002976770900000022
the first resistor R is adjusted by control1And a third resistor R3Such that the output voltage is first order temperature independent.
Further, the current mirror structure comprises a sixth triode Q6The seventh triode Q7The eighth triode Q8Fourth resistor R4And a fifth resistor R5(ii) a The fourth resistor R4First terminal of (1) and supply voltage VDDConnected with the sixth triode Q at the second end6The emitting electrodes are connected; the fifth resistor R5First terminal of (1) and supply voltage VDDConnected with the seventh triode Q at the second end7The emitting electrodes are connected; the sixth triode Q6Base electrode of the seventh triode Q7And the eighth triode Q8And the collector of the sixth triode Q is connected to6The seventh triode Q7Is provided by the start-up circuit; the seventh triode Q7And a third triode Q in the negative feedback loop3Is connected with the collector of the sixth triode Q6Collector electrode of and the eighth triode Q8Is connected with the base of the eighth triode Q8The emitter of (2) is grounded.
Furthermore, the current mirror structure further comprises a fourth triode Q4Fifth triode Q5Eighth resistor R8Ninth resistor R9And a tenth resistor R10(ii) a The fifth triode Q5The collector electrode of the first triode is connected with the base electrode of the second triode to form a diode structure, and the fifth triode Q5Base of and the fourth triode Q4The base electrodes are connected; the fifth triode Q5And the eighth resistor R8Is connected to one end of the eighth resistor R8And the other end of the negative feedback loop and a first MOS tube M in the negative feedback loop1The source electrodes of the two-way transistor are connected; the fifth triode Q5And the ninth resistor R9Is connected to one end of the ninth resistor R9The other end of the first and second electrodes is grounded; the fourth triode Q4And the tenth resistor R10Is connected to the fourth triode Q4Collector electrode of and the eighth triode Q8Is connected to the base of the tenth resistor R10And the other end of the same is grounded.
Further, the negative feedback loop comprises the core circuit and a third triode Q3And a drive structure; the third tripolarTube Q3Base of and the second triode Q2Is connected to the collector of the third triode Q3The emitter of the third triode Q is grounded, and the third triode Q3Is connected to the drive structure.
Further, the driving structure is a first MOS transistor M1(ii) a The third triode Q3Collector and the first MOS transistor M1Is connected with the grid electrode of the first MOS tube M1Is connected to a supply voltage VDDThe first MOS transistor M1Is connected to the first resistor R1And a second resistor R2The connecting end of (1).
Further, the starting circuit comprises a ninth triode Q9Thirteenth electrode tube Q10Second MOS transistor M2A sixth resistor R6And a seventh resistor R7(ii) a The ninth triode Q9Emitter and supply voltage VDDConnected with the collector of the third triode Q3Is connected to the collector of said thirteenth pole tube Q10The base electrodes are connected; the thirteenth polar tube Q10And the second MOS tube M2Is connected with the grid electrode of the second MOS tube M, the collector electrode of the second MOS tube M is grounded, and the base electrode of the second MOS tube M is connected with the base electrode of the first MOS tube M2The drain electrode of (1), the seventh resistor R7Is connected to the first terminal of the first resistor, the seventh resistor R7A second ground; the second MOS transistor M2And the sixth resistor R6Is connected to one end of the sixth resistor R6And the other end of the voltage-controlled rectifier to the supply voltage VDDAre connected.
Due to the adoption of the technical scheme, the invention has the following advantages:
1. the invention has simple structure, and the first resistor R is adjusted in the core circuit part for generating band gap voltage1And a third resistor R3The proportional relation of the band gap reference voltage source can enable the output voltage to have a low temperature coefficient, and the band gap reference voltage source structure has good temperature characteristics.
2. The band-gap reference voltage source has a negative feedback loop structure, so that the influence of other interference sources on the output voltage is effectively inhibited, and the band-gap reference voltage source has good stability.
3. The band-gap reference voltage source has few circuit components, effectively reduces noise sources of noise generated by output, simultaneously utilizes a negative feedback loop to replace an operational amplifier, reduces noise brought by a differential input end of the operational amplifier, and has good performance of low output noise.
4. The invention enlarges the first MOS tube M1The size of the bandgap reference voltage source is reduced, and meanwhile, the influence of an output load on a core circuit generating the bandgap voltage is reduced through a current mirror structure, so that the bandgap reference voltage source has large output driving capability.
In conclusion, the band-gap reference voltage source is processed by the BCD process, and the voltage source circuit can effectively increase the loading capacity and reduce the temperature coefficient of the output voltage on the basis of reducing the output noise, and has the advantages of low output noise, low temperature coefficient and high output driving capacity.
Drawings
Fig. 1 is a circuit diagram of an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.
In the description of the present invention, it is to be understood that the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance, and therefore should not be construed as limiting the present invention. The terms "connected" and "coupled" are to be construed broadly and may include, for example, direct connection, indirect connection through an intermediary, and communication between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
As shown in fig. 1, the present invention provides a bandgap reference voltage source circuit with large output driving capability and low output noise, which includes a core circuit generating a bandgap voltage, a negative feedback loop, a current mirror structure and a start-up circuit. The core circuit is used for generating band-gap voltage, the input end of the core circuit is connected with the starting circuit, the output end of the core circuit is connected with the current mirror structure, and the output driving capability of the voltage source circuit is increased through the current mirror structure; and a negative feedback loop is arranged between the core circuit and the starting circuit and between the core circuit and the current mirror structure, the negative feedback loop replaces the traditional operational amplifier to ensure the stability of the output voltage, and the low-frequency noise caused by the input MOS tube of the operational amplifier is effectively avoided.
In a preferred embodiment, the core circuit comprises a first resistor R1A second resistance R2Third resistor R3A first triode Q1And a second triode Q2. A first resistor R1First terminal and second resistor R2Is connected to the first terminal of the first resistor R1First terminal and second resistor R2The first end of the first switch is connected and then used as the output end of the core circuit; a first resistor R1Second terminal of and first triode Q1Base electrode of, third resistor R3Are connected with each other; third resistor R3Second terminal of and first triode Q1Is connected with the collector of the first triode Q1The emitter of (2) is grounded. A second resistor R2Second terminal of the second transistor and a second triode Q2Is connected to the collector of a second triode Q2Base and first triode Q1Is connected to the collector of a second triode Q2The emitter of (2) is grounded. Third resistor R3The voltage difference between the two ends is equal to that of the first triode Q1Base-emitter voltage and second triode Q2Of the base-emitter voltage difference Δ VBEBy controlling the first transistor Q1And a second triode Q2The current relationship between can be such that Δ VBEIs positively correlated with temperature; then, through the third resistor R3The current of (a) is also positively correlated with the temperature. If the current of the base electrode of the triode is neglected, the current passes through the fourth stepA resistor R1Through a third resistor R3Are equal, then the first resistance R is equal1The voltage at the two ends is positively correlated with the temperature. A first triode Q1The base-emitter voltage is approximately in negative correlation with the temperature by regulating the first resistor R1And a third resistor R3The ratio of (a) to (b) may be such that the voltage output of the core circuit produces a bandgap voltage that is approximately independent of temperature.
In a preferred embodiment, the current mirror structure comprises a fourth transistor Q4Fifth triode Q5The sixth triode Q6The seventh triode Q7The eighth triode Q8Fourth resistor R4Fifth resistor R5Eighth resistor R8Ninth resistor R9And a tenth resistor R10. Wherein, the fourth resistor R4First terminal of (1) and supply voltage VDDConnected with the sixth triode Q at the second end6Are connected. Fifth resistor R5First terminal of (1) and supply voltage VDDConnected with the second end of the seventh triode Q7Are connected. Sixth triode Q6Base electrode of the seventh triode Q7Base and eighth triode Q8Is connected to the collector of the sixth triode Q, and6and a seventh triode Q7The base voltage of the second MOS transistor M2Is provided. Seventh triode Q7Collector and third triode Q3Is connected with the collector of the sixth triode Q6Collector and eighth triode Q8Is connected with the base of the eighth triode Q8The emitter of (2) is grounded.
Further, a fifth triode Q5The collector and the base are connected to form a diode structure, and a fifth triode Q5Base and fourth triode Q4The base electrodes are connected; fifth triode Q5Collector and eighth resistor R8Is connected to an eighth resistor R8And the other end of the first MOS transistor M1Are connected. Fifth triode Q5Emitter and ninth resistor R9Is connected to one end of a ninth resistor R9And the other end of the same is grounded. Fourth triode Q4Emitter and tenth resistor R10Is connected to one end of a fourth triode Q4Collector and eighth triode Q8Is connected to the base of the tenth resistor R10And the other end of the same is grounded.
When in use, the current mirror structure can enable the first triode Q to be connected under the condition of neglecting the base current of the triode1A second triode Q2And a third triode Q3Equal or multiple in current. The method specifically comprises the following steps:
the output voltage can be kept stable due to the action of the negative feedback loop. In the case of neglecting the base current of the triode, the relationship of the output end voltage can be obtained as follows:
Vout＝IC1R1+VBE1＝IC5(R8+R9)+VBE5
since the base-collector voltage of the triode is controlled by the collector current of the triode, by controlling R1＝R8+R9Can control VBE1＝VBE5，IC1＝IC5。
By means of the current mirror structure, the collector current through transistor Q3 can be made equal to the collector current through transistor Q5, thus making IC1＝IC3，VBE1＝VBE3. In the practical realization process, the resistor R can be removed9And R10。
As shown in fig. 1, a third resistor R3The voltage at both ends is equal to that of the first triode Q1And a second triode Q2Base-collector voltage difference avBE：
Figure BDA0002976770900000051
Where k is Boltzmann's constant, T is absolute temperature, q is the amount of charge of a single electron, IC1、IC2Is a first triode Q1And a second three poleTube Q2Collector current of A1、A2Is a first triode Q1And a second triode Q2Emitter cross-sectional area, VBE1、VBE2Is a first triode Q1A second triode Q2Base-emitter voltage. Under the condition of neglecting the base current of the triode, the voltage relation of the output end can be obtained as follows:
Vout＝IC1R1+VBE1＝IC2R2+VBE3
the transistor Q can be controlled by a current mirror structure1And a triode Q3So that V isBE1＝VBE3. Thereby making the triode Q1And a triode Q2The current relationship of (a) is:
IC1R1＝IC2R2
so that it is possible to control the resistance R1And a resistance R2Can control the size of IC1And IC2So that the resistance R is3The voltage at both ends is completely in positive correlation with the temperature. Then, the output voltage is:
Figure BDA0002976770900000061
the first resistor R is adjusted by control1And a third resistor R3Can make the output end voltage VoutIs first order temperature independent.
In a preferred embodiment, the negative feedback loop includes a first resistor R in the core circuit1A second resistor R2A third resistor R3A first triode Q1And a second triode Q2And a third transistor Q3And a drive structure. Wherein, the third triode Q3Base and second triode Q2Is connected to the collector of the third triode Q3The emitter of the third triode Q is grounded3Is connected to the drive structure.
Preferably, the driving structure is a first MOS transistor M1. By adjusting the first MOS transistor M1The output driving capability can be effectively increased. Third triode Q3Collector and first MOS transistor M1Is connected with the grid electrode of the first MOS tube M1Is connected to a supply voltage VDDThe first MOS transistor M1Is connected to a first resistor R1And a second resistor R2The connecting end of (1).
In use, assuming a positive increment at the output, the positive increment is generated in the third transistor Q through the core circuit generating the band gap voltage3Generates a forward increment at the base of the transistor, thereby enabling the third triode Q3A negative increment is generated at the collector of the first MOS transistor M1The function in the negative feedback loop is similar to that of a follower, so that the third triode Q3The change in the collector of (a) directly affects the change in the output terminal. So that the third triode Q3The negative increment at the collector can inhibit the original positive increment of the output end, and the negative feedback circuit can inhibit the change of the voltage of the output end and maintain the stability of the voltage of the output end. Meanwhile, compared with the traditional band-gap reference voltage source, the embodiment does not use an operational amplifier, reduces noise of the differential input end of the operational amplifier caused by factors such as process errors and the like, and particularly reduces low-frequency noise caused by an MOS (metal oxide semiconductor) tube at the input end of the operational amplifier.
Meanwhile, the triode Q is operated by the current mirror1、Q2、Q3、Q4、Q5、Q6、Q7、Q8The current is controlled by the output voltage, so the change of the output load size does not obviously change the working state of the triode in the voltage source circuit, and the MOS transistor M is increased1The output driving capability of the voltage source can be obviously increased under the condition of not influencing the magnitude of the output voltage.
In a preferred embodiment, the startup circuit is used to ensure that the core circuit operates in a normal state rather than a meta-stable state, and after the core circuit operates normally, the startup circuit operates in a normal stateMiddle ninth triode Q9And a thirteenth polar tube Q10Will be turned off, the second MOS transistor M2A sixth resistor R6A seventh resistor R7The branch circuit formed by the first triode Q is a sixth triode Q6And a seventh triode Q7A bias voltage is provided. Specifically, the start-up circuit includes a ninth triode Q9Thirteenth electrode tube Q10Second MOS transistor M2A sixth resistor R6And a seventh resistor R7. Wherein, the ninth triode Q9Emitter and supply voltage VDDConnected with the collector of the third triode Q3Is connected with the collector of the thirteenth polar tube Q10Are connected to each other. Thirteenth polar tube Q10Emitter and second MOS transistor M2Is connected with the grid electrode, the collector electrode is grounded, and the base electrode is connected with the second MOS tube M2Drain electrode of (1), seventh resistor R7Is connected to a seventh resistor R7To the second ground. Second MOS transistor M2Source and sixth resistor R6Is connected to one end of a sixth resistor R6And the other end of the voltage-controlled rectifier to the supply voltage VDDAre connected.
In use, when the circuit is powered on, the ninth triode Q9Conducting to the third triode Q3Injecting current to cause the third transistor Q3The sixth triode Q with rising collector voltage6And a seventh triode Q7And conducting. Thirteenth polar tube Q10For pulling down the sixth triode Q6And a seventh triode Q7The base voltage of (1). Sixth triode Q6And a seventh triode Q7The base voltage of the transistor (M) is reduced to enable the second MOS transistor (M)2The current of (b) is increased so that the ninth triode Q is operated9And a thirteenth pole tube Q10The base voltage of the transistor rises, thereby causing the ninth triode Q9And a thirteenth pole tube Q10And (6) turning off. Therefore, the starting circuit can ensure that the circuit works in a normal state instead of a metastable state, and meanwhile, after the circuit works normally, part of the starting circuit can be turned off, so that the starting circuit is prevented from increasing the power consumption of the circuit.
In conclusion, the invention adopts a negative feedback loop to replace an operational amplifier to ensure the stability of the output voltage, and simultaneously avoids low-frequency noise caused by an input MOS (metal oxide semiconductor) tube of the operational amplifier, thereby realizing the characteristic of low output noise. The current mirror structure and the negative feedback loop avoid the influence of the output load change on the working state of the band gap reference voltage source circuit, so that the band gap reference voltage source has the characteristic of large output driving capability. In order to verify the performance, the band-gap reference voltage source circuit is simulated on a Cadence platform, and the simulation result shows that under the normal temperature condition, the band-gap reference voltage source runs for 1000 seconds in a noise environment of 0.1Hz-10Hz, the peak-to-peak noise of the output voltage is 442.1nV in a low-frequency range of 0.1Hz-10Hz, and the maximum output current is 444.6 mA.
The above embodiments are only for illustrating the present invention, and the structure, size, arrangement position and shape of each component can be changed, and on the basis of the technical scheme of the present invention, the improvement and equivalent transformation of the individual components according to the principle of the present invention should not be excluded from the protection scope of the present invention.

Claims (5)

1. A bandgap reference voltage source circuit, comprising: the circuit comprises a core circuit, a negative feedback loop, a current mirror structure and a starting circuit; the core circuit is used for generating band-gap voltage, the input end of the core circuit is connected with the starting circuit, the output end of the core circuit is connected with the current mirror structure, and the output driving capability of the voltage source circuit is increased through the current mirror structure; the negative feedback loop is arranged among the core circuit, the starting circuit and the current mirror structure, and the stability of output voltage is ensured by the negative feedback loop;
the core circuit comprises a first resistor R1A second resistance R2Third resistor R3A first triode Q1And a second triode Q2(ii) a The first resistor R1First terminal of and the second resistor R2Is connected to the first terminal of the first resistor R1First terminal of and the second resistor R2Is connected to serve as the output terminal of the core circuit; the first resistor R1And the second terminal of the first triode Q1The base electrode of (2), the third resistor R3Are connected with each other; the third resistor R3And the second terminal of the first triode Q1Is connected with the collector of the first triode Q1The emitter of (2) is grounded; the second resistor R2And the second terminal of the second triode Q2Is connected with the collector of the second triode Q2Base of and the first triode Q1Is connected with the collector of the second triode Q2The emitter of (2) is grounded;
the current mirror structure comprises a sixth triode Q6The seventh triode Q7The eighth triode Q8Fourth resistor R4And a fifth resistor R5(ii) a The fourth resistor R4First terminal of (1) and supply voltage VDDConnected with the sixth triode Q at the second end6The emitting electrodes are connected; the fifth resistor R5First terminal of (1) and supply voltage VDDConnected with the seventh triode Q at the second end7The emitting electrodes are connected; the sixth triode Q6Base electrode of the seventh triode Q7And the eighth triode Q8And the collector of the sixth triode Q is connected to6The seventh triode Q7Is provided by the start-up circuit; the seventh triode Q7And a third triode Q in the negative feedback loop3Is connected with the collector of the sixth triode Q6Collector electrode of and the eighth triode Q8Is connected with the base of the eighth triode Q8The emitter of (2) is grounded;
the negative feedback loop comprises the core circuit and a third triode Q3And a drive structure; the third triode Q3Base of and the second triode Q2Is connected to the collector of the third triode Q3The emitter of the third triode Q is grounded, and the third triode Q3The collector electrode of the driving structure is connected with the driving structure;
the driving structure is a first MOS tube M1(ii) a The third triode Q3The collector electrode and the second electrodeMOS transistor M1Is connected with the grid electrode of the first MOS tube M1Is connected to a supply voltage VDDThe first MOS transistor M1Is connected to the first resistor R1And a second resistor R2The connecting end of (1);
the starting circuit comprises a ninth triode Q9Thirteenth electrode tube Q10Second MOS transistor M2A sixth resistor R6And a seventh resistor R7(ii) a The ninth triode Q9Emitter and supply voltage VDDConnected with the collector of the third triode Q3Is connected to the collector of said thirteenth pole tube Q10The base electrodes are connected; the thirteenth polar tube Q10And the second MOS tube M2Is connected with the grid electrode of the second MOS tube M, the collector electrode of the second MOS tube M is grounded, and the base electrode of the second MOS tube M is connected with the base electrode of the first MOS tube M2The drain electrode of (1), the seventh resistor R7Is connected to the first terminal of the first resistor, the seventh resistor R7The second terminal of (1) is grounded; the second MOS transistor M2And the sixth resistor R6Is connected to one end of the sixth resistor R6And the other end of the voltage-controlled rectifier to the supply voltage VDDAre connected.
2. The bandgap reference voltage source circuit of claim 1, wherein said third resistor R3The voltage difference between the two ends is equal to that of the first triode Q1And the base-emitter voltage of the second triode Q2Of the base-emitter voltage difference Δ VBE。
3. The bandgap reference voltage source circuit of claim 1, wherein said second transistor Q is coupled to said first transistor Q2Of the base-emitter voltage difference Δ VBEComprises the following steps:
Figure FDA0003535714430000021
where k is Boltzmann's constant, T is absolute temperature, q is the amount of charge of a single electron, IC1、IC2Is the first triode Q1And the second triode Q2Collector current of A1、A2Is the first triode Q1And the second triode Q2Emitter cross-sectional area, VBE1、VBE2Respectively, the first triode Q1The second triode Q2Base-emitter voltage.
4. The bandgap reference voltage source circuit of claim 3, wherein the output terminal voltage V of the core circuitoutComprises the following steps:
Figure FDA0003535714430000022
the first resistor R is adjusted by control1And a third resistor R3The proportional relationship of (a) makes the output voltage independent of temperature.
5. The bandgap reference voltage source circuit of claim 1, wherein said current mirror structure further comprises a fourth transistor Q4Fifth triode Q5Eighth resistor R8Ninth resistor R9And a tenth resistor R10(ii) a The fifth triode Q5The collector electrode of the first triode is connected with the base electrode of the second triode to form a diode structure, and the fifth triode Q5Base of and the fourth triode Q4The base electrodes are connected; the fifth triode Q5And the eighth resistor R8Is connected to one end of the eighth resistor R8And the other end of the negative feedback loop and a first MOS tube M in the negative feedback loop1The source electrodes of the two-way transistor are connected; the fifth triode Q5And the ninth resistor R9Is connected to one end of the ninth resistor R9The other end of the first and second electrodes is grounded; the fourth triode Q4And the tenth resistor R10Is connected to the fourth triode Q4Collector electrode of and the eighth triode Q8Base electrode ofConnected, the tenth resistor R10And the other end of the same is grounded.
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