CN112947659B - Band-gap voltage reference circuit applied to 1/f noise of MEMS (micro-electromechanical systems) inertial device - Google Patents
Band-gap voltage reference circuit applied to 1/f noise of MEMS (micro-electromechanical systems) inertial device Download PDFInfo
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- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
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- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
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Abstract
The invention belongs to the technical field of analog integrated circuit design, and discloses a band-gap voltage reference circuit applied to 1/f noise of an MEMS (micro-electromechanical system) inertial device, which consists of a current source module, a temperature sensitive module, a frequency compensation module, a proportional resistor module and a chopper amplifier module. According to the invention, chopping switches are added at the current source module and the operational amplifier module to modulate signals, and the frequency compensation module is added in the circuit, so that the influence of 1/f noise in the circuit is greatly weakened, and the closed loop stability of the circuit is improved. By reasonably adjusting the parameters of the proportional resistor, a voltage value irrelevant to the temperature can be output in the chopper amplifier. The problems of poor zero stability and low threshold resolution of the MEMS inertial device caused by low-frequency 1/f noise in the MEMS inertial device are solved.
Description
Technical Field
The invention belongs to the technical field of analog integrated circuit design, and particularly relates to a band-gap voltage reference circuit applied to 1/f noise of an MEMS (micro-electromechanical system) inertial device.
Background
At present, various noises often exist in an actual power supply due to the influence of non-ideal factors such as temperature, process deviation and the like. As the size of MEMS inertial devices continues to shrink, the effect of this noise becomes more and more severe. One common solution to temperature drift is to use a Bandgap Voltage Reference Circuit (Bandgap Reference Circuit) as the Reference Voltage Circuit in the Circuit, since it can provide a stable Reference Voltage independent of temperature. Meanwhile, in order to reduce the influence of offset voltage and noise of the Operational Amplifier caused by process deviation, a chopper switch () is often added to a transconductance Operational Amplifier (OTA) in the bandgap voltage reference circuit to eliminate the influence of 1/f noise and offset voltage.
Fig. 1 is a typical bandgap voltage reference circuit with chopper amplifier, which includes a set of current sources driven by OTA output terminals, a pair of feedback resistors, a transconductance operational amplifier with chopper and a component module. The resistors R1 and R2 form a negative feedback loop and a positive feedback loop with the OTA and the current source respectively, the resistor 3 in the component module provides voltage with positive temperature coefficient, the transistor 1 and the transistor 2 provide voltage with negative temperature coefficient, and stable voltage irrelevant to temperature can be obtained at the output end of the OTA by reasonably adjusting parameters.
The signal conditioning circuit of the MEMS inertial device has very high requirement on reference voltage, and the low-frequency 1/f noise of the signal conditioning circuit determines key parameters such as zero-offset stability, resolution and the like of the device to a great extent. In some prior art designs, although the offset voltage and 1/f noise in the OTA are suppressed, the noise and loop instability factors introduced by the non-ideality of the current sources and the process variation of the resistance pair R1, R2 are not effectively eliminated. It is obvious that the circuit of this structure has not been able to satisfy the design of a reference voltage with high accuracy and stability.
In addition, the requirement for the reference voltage is stable and reliable, and in the structure shown in fig. 1, two loops of positive and negative feedback exist, and the module is stable and reliable only when the negative feedback coefficient is greater than the positive feedback coefficient. And this stability varies with operating current, load capacitance and ambient temperature. It is very necessary to improve the reliability and stability of the reference power module.
Through the above analysis, the problems and defects of the prior art are as follows:
(1) in the prior art, the zero position of the MEMS inertial device is poor in stability and low in threshold resolution due to errors caused by deviations of a processing technology, temperature and the like and 1/f noise in the MEMS inertial device.
(2) In the prior art, a chopper amplifier with low 1/f noise is mostly adopted, and the low-frequency noise of a current source is ignored.
(3) In the prior art, the reliability research on a reference source is insufficient.
The difficulty in solving the above problems and defects is:
the method comprises the following steps: different application scenes and effectiveness measures for performance improvement in the application scenes.
The significance of solving the problems and the defects is as follows:
the invention designs a low 1/f noise voltage reference source circuit applied to an MEMS (micro-electromechanical system) inertial device, which can effectively inhibit 1/f noise introduced by a current source in the circuit and 1/f noise in an operational amplifier, and improve the stability of a feedback loop through frequency compensation, so that the MEMS inertial device has more accurate stable reference voltage under different temperatures and process deviations, and the zero offset stability and the resolution of the MEMS inertial device are improved.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a band-gap voltage reference circuit applied to 1/f noise of an MEMS (micro-electromechanical systems) inertial device, and particularly relates to a high-reliability band-gap voltage reference circuit with extremely low 1/f noise applied to the MEMS inertial device.
The invention is realized in such a way that a bandgap voltage reference circuit with low 1/f noise chopper stabilization comprises:
the current source module comprises a PMOS (P-channel metal oxide semiconductor) tube, the gate voltage of the PMOS tube is electrically connected with the output voltage of the chopper amplifier, and the drain electrode of the PMOS tube is connected with the signal modulation module;
the chopper switch circuit composed of MOS tubes is connected in series between the current source module and the feedback resistance module; the noise part in the current source module is modulated to high frequency, and the influence of 1/f noise and offset voltage is inhibited;
the proportional resistor module comprises a first resistor R1, a second resistor R2 and a third resistor R3, and the first resistor R1 and the second resistor R2 are connected between the signal modulation module and the chopper amplifier module in series;
the frequency compensation module is connected with the signal modulation module and the feedback resistance module through an RC low-pass filter, and is used for filtering high-frequency noise and realizing the separation of a main pole and a secondary pole of the circuit by introducing a low main pole into a loop; the circuit comprises: a positive feedback loop formed by the first resistor R1, the operational amplifier and the current source module, and a negative feedback loop formed by the second resistor R2, the operational amplifier and the current source module;
the chopper amplifier module consists of two chopper switches and a transconductance operational amplifier, wherein the first chopper switch is electrically connected with two input ends of the transconductance operational amplifier and is used for modulating signals; the second chopping switch is electrically connected to the output end of the transconductance operational amplifier and used for demodulating signals;
the temperature sensitive module consists of a pair of transistors Q1 and Q2 which are arranged in a mirror image mode; the chopper amplifier module is used for generating a voltage with negative correlation and a voltage with positive correlation of temperature, and outputting a voltage value independent of the temperature by adjusting the R3 proportion of a resistor R2.
Furthermore, the resistance values of the first resistor R1 and the second resistor R2 are the same; the resistance values of the first resistor R1 and the second resistor R2 are adjusted by an external control signal; the first resistor R1 is connected with the non-inverting input end of the chopper amplifier, and the second resistor R2 is connected with the inverting input end of the chopper amplifier module.
Further, the frequency compensation module is connected with the signal modulation module and the common end of the first resistor R1;
the frequency compensation module is formed by connecting a capacitor C1 and a resistor R4 in series.
Further, the total loop gain in the frequency compensation module is the difference between the negative feedback loop gain and the positive feedback loop gain, and is:
LGgeneral assembly＝LG--LG+；
Wherein Aop(s) is the open loop gain of the operational amplifier, gmpIs transconductance of current source PMOS tubes M1 and M2, gmQIs the transconductance of transistors Q1 and Q2.
Further, the output end voltage VOUT of the chopper amplifier module is the gate driving voltage of the current source module.
Further, the base and the collector of the pair of mirror image arranged transistors Q1, Q2 are both grounded; the emitter of the transistor Q1 is connected with the resistor R1 and the common end of the inverting input end of the chopper amplifier;
an emitter of the transistor Q2 is connected with one end of the resistor R3, and the other end of the resistor R3 is connected with the common end of the resistor R2 and the non-inverting input end of the chopper amplifier;
the transistors Q1 and Q2 are used to provide a voltage that is inversely related to temperature, and the resistor R3 is used to flow a current that is positively related to temperature and also to provide a voltage that is positively related to temperature.
The invention also aims to provide an MEMS inertial device in the field of biological and pharmaceutical industries, wherein the MEMS inertial device in the field of biological and pharmaceutical industries is provided with the band-gap voltage reference circuit with low 1/f noise and stable chopping, and is applied to different environmental stress conditions of humidity, temperature variation and electrostatic discharge.
The invention also aims to provide the MEMS inertial device in the field of automobile industry, wherein the MEMS inertial device in the field of automobile industry is provided with the stable band gap voltage reference circuit with low 1/f noise chopping, and is applied to different environmental stress conditions of impact and vibration.
The invention also aims to provide an MEMS inertial device in the fields of robots, consumer electronics, aerospace and missile guidance, wherein the MEMS inertial device in the fields of robots, consumer electronics, aerospace and missile guidance is loaded with the band-gap voltage reference circuit with low 1/f noise and stable chopping, and is applied to different environmental stress conditions of impact, vibration, humidity, temperature change, irradiation and electrostatic discharge.
Another object of the present invention is to provide a noise cancellation method for a bandgap voltage reference circuit with low 1/f noise chopper stabilization, the noise cancellation method comprising:
in the circuit, the components with large 1/f noise contribution are an amplifier, a mirror current source and a bottom triode in sequence. 1/f noise of an element is reduced by adopting a chopping technology, and the 1/f noise generated by the element is modulated to a high-frequency position by adding a chopping switch at the output end of the element, so that only thermal noise exists at a low-frequency position concerned by people, and the 1/f noise of a transmission voltage is greatly reduced.
For the amplifier, a single-end output folding type cascode amplifier is adopted, chopping switches are respectively added at the input end and the input end of a differential pair transistor of the amplifier, and useful input signals of the amplifier are still low-frequency signals after twice chopping; and 1/f noise generated by the amplifier is subjected to primary chopping and is positioned at a high-frequency end. Thereby greatly reducing the 1/f noise of low frequencies.
For the mirror current source, the unmatched current and 1/f noise are modulated to a high frequency position after passing through a chopping switch, and the low-frequency signals of the two paths of current are almost equal and are not influenced.
By combining all the technical schemes, the invention has the advantages and positive effects that:
the invention consists of a current source module, a signal modulation module, a frequency compensation module, a feedback resistance module, a chopper amplifier module and a component module. According to the invention, chopping switches are added at the current source module and the operational amplifier module to modulate signals, and the frequency compensation module is added in the circuit, so that the influence of 1/f noise in the circuit is greatly weakened, and the closed loop stability of the circuit is improved. The problems of poor zero stability and low threshold resolution of the MEMS inertial device caused by errors caused by deviations of a processing technology, temperature and the like and 1/f noise in the MEMS inertial device are solved.
Compared with the prior art, the effect of the voltage reference source noise spectrum experimental data is shown in fig. 6(a) a comparison graph of the outputs of the MMES sensors of the conventional reference source and the reference source of the application, wherein the upper curve in the graph is the conventional method, and the lower broken line in the graph is the method of the invention. FIG. 6(b) is a graph comparing the noise spectrum of the conventional method with the noise spectrum of the voltage reference source of the present invention, wherein the upper curve is the conventional method and the lower broken line is the method of the present invention.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments of the present application will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained from the drawings without creative efforts.
Fig. 1 is a schematic diagram of a typical bandgap reference voltage circuit of the prior art provided by an embodiment of the present invention.
Fig. 2 is a schematic diagram of a bandgap reference voltage circuit with a signal modulation module and a frequency compensation module according to an embodiment of the present invention.
Fig. 3 is a schematic circuit diagram of a frequency compensation module according to an embodiment of the present invention.
Fig. 4 is a schematic diagram of the operation of the frequency compensation module according to the embodiment of the present invention.
Fig. 5 is a circuit schematic diagram of a chopper amplifier module according to an embodiment of the present invention.
FIG. 6(a) is a plot comparing MMES sensor output for a conventional reference source and a reference source of the present application, where the upper curve is for the conventional method and the lower broken line is for the method of the present invention.
FIG. 6(b) is a graph comparing the noise spectrum of the conventional method with the noise spectrum of the voltage reference source of the present invention, wherein the upper curve is the conventional method and the lower broken line is the method of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The present invention provides a solution to the problems of the prior art, and is described in detail below with reference to the accompanying drawings.
As shown in fig. 2 to 5, the bandgap voltage reference circuit with low 1/f noise chopper stabilization provided by the embodiment of the present invention includes:
the device comprises a current source module, a signal modulation module, a frequency compensation module, a feedback resistance module, a chopper amplifier module and a component module.
And the grid voltage of a PMOS (P-channel metal oxide semiconductor) tube in the current source module is electrically connected with the output voltage of the chopper amplifier, and the drain electrode of the PMOS tube is connected with the signal modulation module.
The signal modulation module is a chopping switch circuit composed of MOS tubes and is connected in series between a current source and a feedback resistor pair. The method is used for modulating the noise part in the current source to high frequency and inhibiting the influence of 1/f noise and offset voltage.
The feedback resistor pair is connected in series between the signal modulation module and the chopper amplifier module, and the resistance values of the two resistors are the same. The resistor R1 is connected with the non-inverting input end of the chopper amplifier, and the resistor R2 is connected with the inverting input end of the chopper amplifier. The resistor R1, the chopper amplifier and the current source form a positive feedback loop, and the resistor R2, the chopper amplifier and the current source form a negative feedback loop.
The frequency compensation module is connected with the signal modulation module and the common end of the negative feedback resistor R1, is formed by connecting a capacitor C1 and a resistor R4 in series, and has the characteristic of low-pass filtering. The low-frequency filter is used for filtering high-frequency noise and a low main pole is introduced into a loop, so that the main pole and the secondary pole of the circuit are separated, the phase margin is improved, and the stability of a feedback loop is enhanced.
The working principle of the compensation module is taken as an example in fig. 4. The frequency compensation module is added in a positive feedback loop formed by a resistor R1, an operational amplifier and a current source, and a resistor R2, the operational amplifier and the current source form a negative feedback loop.
The total loop gain in the circuit is the difference between the negative feedback loop gain and the positive feedback loop gain.
LCGeneral assembly＝LG--LG+
Wherein Aop(s) is the open loop gain of the operational amplifier, gmpIs transconductance of current source PMOS tubes M1 and M2, gmQIs the transconductance of transistors Q1 and Q2.
Therefore, after the frequency compensation module is added, the transfer function of the circuit has a pair of very close zero pole pairs on the left half plane, which is equivalent to offset one pole, and the phase margin of the loop is increased. Meanwhile, the zero point of the left half plane is also beneficial to the improvement of the stability.
The chopper amplifier module is composed of two chopper switches and a transconductance operational amplifier, wherein the two chopper switches are respectively added to the input end and the output end of the transconductance operational amplifier and are used for eliminating the influence of offset voltage and 1/f noise of the input end of the operational amplifier. And the voltage VOUT at the output end of the chopper amplifier module is the grid driving voltage of the current source module.
The component module consists of a pair of mirror-image transistors Q1, Q2 and a resistor R3. The bases and collectors of the two transistors are grounded. The emitter of transistor Q1 is connected to the common terminal of resistor R1 and the inverting input of the chopper amplifier. The emitter of the transistor Q2 is connected to one end of a resistor R3, and the other end of the resistor R3 is connected to the common terminal of the resistor R2 and the non-inverting input terminal of the chopper amplifier. The transistors Q1 and Q2 are used to provide a voltage that is inversely related to temperature, and the resistor R3 also provides a voltage that is positively related to temperature because a current that is positively related to temperature flows. By reasonably adjusting the parameters, the voltage value which is irrelevant to the temperature can be output in the chopper amplifier.
The positive effects of the invention are further described below in connection with experimental data.
FIG. 6(a) is a plot comparing MMES sensor output for a conventional reference source and a reference source of the present application, where the upper curve is for the conventional method and the lower broken line is for the method of the present invention.
FIG. 6(b) is a graph comparing the noise spectrum of the conventional method with the noise spectrum of the voltage reference source of the present invention, wherein the upper curve is the conventional method and the lower broken line is the method of the present invention.
In the description of the present invention, "a plurality" means two or more unless otherwise specified; the terms "upper", "lower", "left", "right", "inner", "outer", "front", "rear", "head", "tail", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the invention. Furthermore, the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
It should be noted that the embodiments of the present invention can be realized by hardware, software, or a combination of software and hardware. The hardware portion may be implemented using dedicated logic; the software portions may be stored in a memory and executed by a suitable instruction execution system, such as a microprocessor or specially designed hardware. Those skilled in the art will appreciate that the apparatus and methods described above may be implemented using computer executable instructions and/or embodied in processor control code, such code being provided on a carrier medium such as a disk, CD-or DVD-ROM, programmable memory such as read only memory (firmware), or a data carrier such as an optical or electronic signal carrier, for example. The apparatus and its modules of the present invention may be implemented by hardware circuits such as very large scale integrated circuits or gate arrays, semiconductors such as logic chips, transistors, or programmable hardware devices such as field programmable gate arrays, programmable logic devices, etc., or by software executed by various types of processors, or by a combination of hardware circuits and software, e.g., firmware.
The above description is only for the purpose of illustrating the present invention and the appended claims are not to be construed as limiting the scope of the invention, which is intended to cover all modifications, equivalents and improvements that are within the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A bandgap voltage reference circuit with low 1/f noise chopper stabilization, the bandgap voltage reference circuit with low 1/f noise chopper stabilization comprising:
the current source module comprises a PMOS (P-channel metal oxide semiconductor) tube, the gate voltage of the PMOS tube is electrically connected with the output voltage of the chopper amplifier module, and the drain electrode of the PMOS tube is connected with the signal modulation module;
the chopper amplifier module consists of two chopper switches and a transconductance operational amplifier, wherein the first chopper switch is electrically connected with two input ends of the transconductance operational amplifier and is used for modulating signals; the second chopping switch is electrically connected to the output end of the transconductance operational amplifier and used for demodulating signals;
the chopper switch circuit composed of MOS tubes is connected in series between the current source module and the feedback resistance module and is used for modulating a noise part in the current source module to high frequency and inhibiting the influence of 1/f noise and offset voltage;
a feedback resistance module comprising a first resistor R1 and a second resistor R2, wherein the first resistor R1 is connected between the chopping switch circuit and the inverting input terminal of the transconductance operational amplifier, and the second resistor R2 is connected between the chopping switch circuit and the non-inverting input terminal of the transconductance operational amplifier;
the frequency compensation module comprises an RC low-pass filter, is connected with the signal modulation module and the feedback resistance module, and is used for filtering high-frequency noise and realizing the separation of a main pole and a secondary pole of the circuit by introducing a low main pole into a loop; the circuit comprises: a positive feedback loop formed by the first resistor R1, the transconductance operational amplifier and the current source module, and a negative feedback loop formed by the second resistor R2, the transconductance operational amplifier and the current source module;
and the temperature sensitive module consists of a pair of transistors Q1 and Q2 arranged in a mirror image mode and a resistor R3 and is used for providing a voltage which is inversely related to the temperature and a voltage which is positively related to the temperature, and a voltage value which is not related to the temperature is output in the chopper amplifier module by adjusting the proportion of the R2 and the R3.
2. The bandgap voltage reference circuit with low 1/f noise and chopper stabilization as claimed in claim 1, wherein the first resistor R1 and the second resistor R2 have the same resistance; the resistance values of the first resistor R1 and the second resistor R2 are adjusted by an applied control signal.
3. The bandgap voltage reference circuit with low 1/f noise chopper stabilization according to claim 1, wherein said frequency compensation module is connected to a common terminal of the signal modulation module and the first resistor R1;
the frequency compensation module is formed by connecting a capacitor C1 and a resistor R4 in series.
4. A bandgap voltage reference circuit with low 1/f noise chopper stabilization according to claim 3, wherein the total loop gain in the frequency compensation module is the difference between the negative feedback loop gain and the positive feedback loop gain by:
LGgeneral assembly＝LG--LG+；
Wherein Aop(s) is the open loop gain of the operational amplifier, gmpIs transconductance g of PMOS transistors M1 and M2 in the current source modulemQIs the transconductance of transistors Q1 and Q2; r1 is the first resistor, R3 is the third resistor, and C1 is one of the frequency compensation modulesA capacitor.
5. The bandgap voltage reference circuit with low 1/f noise chopper stabilization according to claim 1, wherein the output voltage of the chopper amplifier module is the gate drive voltage of the current source module.
6. A bandgap voltage reference circuit with low 1/f noise chopper stabilization according to claim 1, wherein the base and collector of said pair of mirrored transistors Q1, Q2 are both connected to ground; the emitter of the transistor Q1 is connected with the resistor R1 and the common end of the inverting input end of the transconductance operational amplifier;
an emitter of the transistor Q2 is connected with one end of the resistor R3, and the other end of the resistor R3 is connected with the common end of the resistor R2 and the non-inverting input end of the transconductance operational amplifier;
transistors Q1 and Q2 are used to provide a voltage that is inversely related to temperature; a current positively correlated with temperature flows through the resistor R3, and a voltage positively correlated with temperature is also supplied.
7. An MEMS inertial device in the field of biological and pharmaceutical industries, which is characterized in that the MEMS inertial device in the field of biological and pharmaceutical industries is provided with the low 1/f noise chopper-stabilized band gap voltage reference circuit according to any one of claims 1-6, and is applied to different environmental stress conditions of humidity, temperature variation and electrostatic discharge.
8. An MEMS inertial device in the field of automobile industry, which is characterized in that the MEMS inertial device in the field of automobile industry is provided with the low 1/f noise chopper-stabilized band gap voltage reference circuit according to any one of claims 1-6 and is applied to different environmental stress conditions of impact and vibration.
9. An MEMS inertial device in the fields of robot, consumer electronics, aerospace and missile guidance is characterized in that the MEMS inertial device in the fields of robot, consumer electronics, aerospace and missile guidance is provided with the band-gap voltage reference circuit with low 1/f noise and stable chopping, and the band-gap voltage reference circuit is applied to different environmental stress conditions of impact, vibration, humidity, temperature change, irradiation and electrostatic discharge.
10. A noise cancellation method for implementing the low 1/f noise chopper-stabilized bandgap voltage reference circuit of claim 1, wherein the noise cancellation method comprises:
the chopping switches are added at the current source module and the chopping amplifier module to modulate signals, and the frequency compensation module is added in the circuit to lower the main pole of the circuit, so that the main pole and the secondary pole are separated, the phase margin is improved, and the influence of 1/f noise in the circuit is weakened.
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|---|---|---|---|---|
| JP2705050B2 (en) * | 1985-05-27 | 1998-01-26 | 株式会社ニコン | Reference voltage generation circuit |
| CN102200796A (en) * | 2010-03-25 | 2011-09-28 | 上海沙丘微电子有限公司 | Band-gap reference source circuit with stable low-offset and low-noise noise chopped wave |
| CN204166421U (en) * | 2014-09-10 | 2015-02-18 | 成都星芯微电子科技有限公司 | A kind of voltage reference source circuit of low-power consumption low noise high power supply voltage rejection ratio |
| CN207198708U (en) * | 2017-08-31 | 2018-04-06 | 华中科技大学 | A kind of voltage-reference with noise suppressed |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2705050B2 (en) * | 1985-05-27 | 1998-01-26 | 株式会社ニコン | Reference voltage generation circuit |
| CN102200796A (en) * | 2010-03-25 | 2011-09-28 | 上海沙丘微电子有限公司 | Band-gap reference source circuit with stable low-offset and low-noise noise chopped wave |
| CN204166421U (en) * | 2014-09-10 | 2015-02-18 | 成都星芯微电子科技有限公司 | A kind of voltage reference source circuit of low-power consumption low noise high power supply voltage rejection ratio |
| CN207198708U (en) * | 2017-08-31 | 2018-04-06 | 华中科技大学 | A kind of voltage-reference with noise suppressed |
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