CN112947008A - Electron beam lithography machine - Google Patents
Electron beam lithography machine Download PDFInfo
- Publication number
- CN112947008A CN112947008A CN202110102522.2A CN202110102522A CN112947008A CN 112947008 A CN112947008 A CN 112947008A CN 202110102522 A CN202110102522 A CN 202110102522A CN 112947008 A CN112947008 A CN 112947008A
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- China
- Prior art keywords
- light
- light source
- receiving cavity
- cathode plate
- electron beam
- Prior art date
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- 238000000609 electron-beam lithography Methods 0.000 title claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 36
- 239000010703 silicon Substances 0.000 claims abstract description 36
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 11
- 238000010894 electron beam technology Methods 0.000 claims description 28
- 238000003384 imaging method Methods 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000001459 lithography Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
Abstract
An electron beam lithography machine comprises a vacuum device, a support frame, a photoelectric cathode plate, a light and light beam guiding device, a first light source, a second light source, an electromagnetic lens and a silicon wafer bearing table, wherein the photoelectric cathode plate covers an upper opening of a light beam guiding cavity, a first light guiding receiving cavity and a second light guiding receiving cavity are arranged at two sides of the light beam guiding cavity and are close to the upper opening, the first light source and the second light source are correspondingly arranged in the first light guiding receiving cavity and the second light guiding receiving cavity, light emitted by the first light source and the second light source irradiates on the photoelectric cathode plate, light reflected from the photoelectric cathode plate correspondingly irradiates into the second light guiding receiving cavity and the first light guiding receiving cavity, reflected light is guided into the light guiding receiving cavity at the opposite side, and reflected light on the photoelectric cathode plate cannot be reflected onto a silicon wafer of the workbench, can effectively prevent the reflected light of the photoelectric cathode plate from generating harmful exposure on the photoresist.
Description
Technical Field
The invention relates to the technical field of semiconductor integrated circuit etching, in particular to an electron beam lithography machine.
Background
The conventional lithography machine uses light to manufacture an integrated circuit, and because light waves are relatively long and very thin circuit width is needed for manufacturing the integrated circuit, the actual requirements of the very large scale integrated circuit cannot be met by using various light sources to manufacture the lithography machine.
Aiming at the defects of the prior art, Chinese invention patent application with the name of an electron beam semiconductor lithography machine and the patent application number of 202010964981.7 provides a corresponding solution: referring to fig. 1, the system comprises an electron beam imaging system, a vacuum chamber 12, a vacuum pumping system 13, a silicon wafer feeding bin 4, a silicon wafer feeding system 15, a platform system 16, a silicon wafer discharging system 17, a silicon wafer discharging bin 18, a damping system 19, a power supply system 20, a control screen 21, and a control system 22. The electron beam imaging system comprises an accelerating polar plate 1, a cathode substrate 2, a large-area photocathode 3 containing a mask pattern, a focusing adjustment magnet 4, an electron beam 5 containing an etching pattern, focusing and adjusting magnetic fields 6 to 8, an electron image 9 containing a cathode mask pattern after focusing is reduced, a semiconductor silicon wafer 10 etched with a corresponding pattern, a light-emitting platform with an irradiating photocathode and a silicon wafer supporting plate 11. The method is characterized in that according to different carving contents, the corresponding mask pattern cathode is manufactured and replaced, the photocathode is irradiated by light, emits a photoelectron beam containing the mask pattern and an electron beam containing the mask pattern of the photocathode, and the emitted electron image containing the mask pattern is reduced and etched on materials such as semiconductors by electric field acceleration, magnetic field focusing and magnetic field aberration elimination.
However, the above prior art has the following technical problems: the platform light source is shielded by the silicon chip, so that the light can be uniformly irradiated on the mask plate, if the platform light source is too strong, the photoresist on the silicon chip is harmfully exposed, and if the platform light source is too weak, enough electron beams cannot be generated, so that the contradiction is difficult to balance.
Disclosure of Invention
In view of the above, an electron beam lithography machine that is not blocked by a silicon wafer is provided.
An electron beam lithography machine comprises a vacuum device, a support frame, a photoelectric cathode plate, a light and light beam guiding device, a first light source, a second light source, an electromagnetic lens and a silicon wafer bearing table, wherein the support frame, the photoelectric cathode plate, the light and light beam guiding device, the first light source, the second light source, the electromagnetic lens and the silicon wafer bearing table are arranged in the vacuum device, the photoelectric cathode plate, the light and light beam guiding device, the electromagnetic lens and the silicon wafer bearing table are fixed on the support frame, the light and light beam guiding device is positioned above the silicon wafer bearing table, the light and light beam guiding device comprises a light beam guiding cavity, a first light guiding receiving cavity and a second light guiding receiving cavity, the light beam guiding cavity is provided with an upper opening and a lower opening, the upper opening is larger than the lower opening, the upper opening is opposite to the lower opening, the photoelectric cathode plate covers the upper opening, the first, The second light guide receiving cavity is arranged at two sides of the light beam guide cavity and is close to the upper opening; the first light source and the second light source are correspondingly arranged in the first light guide receiving cavity and the second light guide receiving cavity, light rays emitted by the first light source and the second light source irradiate on the photoelectric cathode plate, and light rays reflected from the photoelectric cathode plate correspondingly enter the second light guide receiving cavity and the first light guide receiving cavity; the photoelectric cathode plate generates imaging electron beam current under the irradiation of light rays of the first light source and the second light source; the electromagnetic lens is arranged outside the light beam guide cavity and used for refracting and converging the imaging electron beam current generated by the photoelectric cathode plate so as to converge the imaging electron beam current on the photoresist of the silicon wafer, and exposing and developing the imaging electron beam current.
Preferably, the first surface of the photocathode plate is provided with a circuit pattern, and the part of the first surface of the photocathode plate, which is provided with the circuit pattern, is coated with a shielding layer which does not generate electron beams under the irradiation of a light source.
Preferably, the first light source and the second light source are any one of X-ray, ultraviolet ray, laser and electron beam bombardment.
In the electron beam lithography machine, the photoelectric cathode plate covers the upper opening of the light beam guide cavity, the first light guide receiving cavity and the second light guide receiving cavity are arranged on two sides of the light beam guide cavity and are close to the upper opening, the first light source and the second light source are correspondingly arranged in the first light guide receiving cavity and the second light guide receiving cavity, light emitted by the first light source and the second light source irradiates on the photoelectric cathode plate, and light reflected from the photoelectric cathode plate correspondingly penetrates into the second light guide receiving cavity and the first light guide receiving cavity, so that the reflected light is guided into the opposite light guide receiving cavity, the reflected light on the photoelectric cathode plate cannot be reflected onto a silicon wafer of a workbench, and harmful exposure of the reflected light of the photoelectric cathode plate to the photoresist can be effectively prevented.
Drawings
FIG. 1 is a schematic diagram of an electron beam lithography machine according to a preferred embodiment.
Fig. 2 is a schematic view of the structure of the photocathode plate of fig. 1.
In the figure: the device comprises a silicon wafer 7, a photoresist 8, an electron beam lithography machine 10, a vacuum device 20, a support frame 30, a photoelectric cathode plate 40, a shielding layer 42, a circuit pattern 43, a light and light beam guiding device 50, a beam guiding cavity 51, a first light guiding and receiving cavity 52, a second light guiding and receiving cavity 53, a first light source 60, a second light source 70, an electromagnetic lens 80 and a silicon wafer bearing table 90.
Detailed Description
Referring to fig. 1, the electron beam lithography machine 10 includes a vacuum device 20, a support frame 30, a photocathode plate 40, a light and beam guiding device 50, a first light source 60, a second light source 70, an electromagnetic lens 80, and a silicon wafer carrying stage 90, wherein the support frame 30, the photocathode plate 40, the light and beam guiding device 50, the first light source 60, the second light source 70, the electromagnetic lens 80, and the silicon wafer carrying stage 90 are disposed in the vacuum device 20, the photocathode plate 40, the light and beam guiding device 50, the electromagnetic lens 80, and the silicon wafer carrying stage 90 are fixed on the support frame 30, and the light and beam guiding device 50 is located above the silicon wafer carrying stage 90.
The light and light beam guiding device 50 comprises a light beam guiding cavity 51, a first light guiding receiving cavity 52 and a second light guiding receiving cavity 53, wherein the light beam guiding cavity 51 is provided with an upper opening and a lower opening, the upper opening is larger than the lower opening, the upper opening is opposite to the lower opening, the photoelectric cathode plate 40 covers the upper opening, and the first light guiding receiving cavity 52 and the second light guiding receiving cavity 53 are arranged at two sides of the light beam guiding cavity 51 and are close to the upper opening; the first light source 60 and the second light source 70 are correspondingly installed in the first light guide receiving cavity 52 and the second light guide receiving cavity 53, light emitted by the first light source 60 and the second light source 70 is irradiated on the first surface of the photoelectric cathode plate 40, and light reflected from the photoelectric cathode plate 40 is correspondingly incident into the second light guide receiving cavity 53 and the first light guide receiving cavity 52; the photoelectric cathode plate 40 generates imaging electron beam current under the irradiation of the light rays of the first light source 60 and the second light source 70; the electromagnetic lens 80 is disposed outside the beam guide cavity 51, and refracts and converges the imaging electron beam generated by the photocathode plate 40, so that the imaging electron beam converges on the photoresist of the silicon wafer on the silicon wafer bearing table 90, and is exposed and developed. In other embodiments, the vacuum device 20 has a function of introducing inert gas to prevent the oxidation of the photocathode plate, considering that the photocathode plate is made of an active material to prevent the oxidation of the surface thereof.
Referring to fig. 2, a circuit pattern 43 is formed on the first surface of the photocathode plate 40, and a shielding layer 42 is coated on a portion of the first surface of the photocathode plate 40 where the circuit pattern is not formed, and does not generate an electron beam under the irradiation of a light source. The circuit pattern on the photoelectric cathode plate is the circuit pattern of a chip to be manufactured, the circuit pattern on the photoelectric cathode plate is formed by plating or coating a shielding layer on a complete photoelectric material, and the part of the photoelectric cathode plate provided with the shielding layer is the formed circuit pattern.
The operation of the electron beam lithography machine 10 is described as follows: the silicon wafer 7 coated with the photoresist 8 is carried by a silicon wafer carrying platform 90, the lower opening of a light beam guiding cavity 51 of the light and light beam guiding device 50 is opposite to the silicon wafer 7 coated with the photoresist 8, the photoelectric cathode plate 40 with a circuit pattern is placed at the upper opening of the light beam guiding cavity 51 of the light and light beam guiding device 50, the surface with the circuit pattern of the photoelectric cathode plate 40 is opposite to the silicon wafer 7 coated with the photoresist 8, the first light source 60 and the second light source 70 of the light and light beam guiding device 50 are turned on, light generated by the first light source 60 and the second light source 70 is irradiated on the photoelectric cathode plate 40 to generate imaging electron beam current with the pattern, the imaging electron beam current flows to the silicon wafer 7 in an accelerating way through an electric field, the imaging electron beam current passes through the electromagnetic lens 80, when the imaging electron beam current passes through the hollow electromagnetic lens 80, a magnetic field can be generated after the electromagnetic lens 80 is electrified, and the imaging electron beam current can be, the imaging electron beam is converged on the photoresist 8 of the silicon chip 7, and is exposed and developed, so that the photoetching purpose of manufacturing the chip is achieved.
Claims (3)
1. An electron beam lithography machine, characterized in that: the vacuum device comprises a vacuum device, a support frame, a photoelectric cathode plate, a light and beam guide device, a first light source, a second light source, an electromagnetic lens and a silicon wafer bearing table, wherein the support frame, the photoelectric cathode plate, the light and beam guide device, the first light source, the second light source, the electromagnetic lens and the silicon wafer bearing table are arranged in the vacuum device, the photoelectric cathode plate, the light and beam guide device, the electromagnetic lens and the silicon wafer bearing table are fixed on the support frame, the light and beam guide device is positioned above the silicon wafer bearing table, the light and beam guide device comprises a light beam guide cavity, a first light guide receiving cavity and a second light guide receiving cavity, the light beam guide cavity is provided with an upper opening and a lower opening, the upper opening is larger than the lower opening, the upper opening is opposite to the lower opening, the photoelectric cathode plate covers the upper opening, and the first light guide receiving cavity and the second light guide receiving cavity are arranged on, and is close to the upper opening; the first light source and the second light source are correspondingly arranged in the first light guide receiving cavity and the second light guide receiving cavity, light rays emitted by the first light source and the second light source irradiate on the photoelectric cathode plate, and light rays reflected from the photoelectric cathode plate correspondingly enter the second light guide receiving cavity and the first light guide receiving cavity; the photoelectric cathode plate generates imaging electron beam current under the irradiation of light rays of the first light source and the second light source; the electromagnetic lens is arranged outside the light beam guide cavity and used for refracting and converging the imaging electron beam current generated by the photoelectric cathode plate so as to converge the imaging electron beam current on the photoresist of the silicon wafer, and exposing and developing the imaging electron beam current.
2. The electron beam lithography machine according to claim 1, wherein: the first surface of the photocathode plate is provided with a circuit pattern, the part without the circuit pattern on the first surface of the photocathode plate is coated with a shielding layer, and the shielding layer does not generate electron beams under the irradiation of a light source.
3. The electron beam lithography machine according to claim 2, wherein: the first light source and the second light source are any one of X-ray, ultraviolet ray, laser and electron beam bombardment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110102522.2A CN112947008B (en) | 2021-01-26 | 2021-01-26 | Electron beam lithography machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110102522.2A CN112947008B (en) | 2021-01-26 | 2021-01-26 | Electron beam lithography machine |
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| Publication Number | Publication Date |
|---|---|
| CN112947008A true CN112947008A (en) | 2021-06-11 |
| CN112947008B CN112947008B (en) | 2023-12-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110102522.2A Active CN112947008B (en) | 2021-01-26 | 2021-01-26 | Electron beam lithography machine |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06291025A (en) * | 1993-03-31 | 1994-10-18 | Toshiba Corp | Electron-beam aligner |
| EP0969325A2 (en) * | 1998-07-01 | 2000-01-05 | Asm Lithography B.V. | Lithographic projection apparatus |
| US6376984B1 (en) * | 1999-07-29 | 2002-04-23 | Applied Materials, Inc. | Patterned heat conducting photocathode for electron beam source |
| CN102163007A (en) * | 2011-05-13 | 2011-08-24 | 上海集成电路研发中心有限公司 | Lithography machine imaging system for improving resolution by using photoelectric effect and imaging method thereof |
| CN111983903A (en) * | 2020-09-15 | 2020-11-24 | 北京国视神州文化传媒有限公司 | Electron beam semiconductor photoetching machine |
-
2021
- 2021-01-26 CN CN202110102522.2A patent/CN112947008B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06291025A (en) * | 1993-03-31 | 1994-10-18 | Toshiba Corp | Electron-beam aligner |
| EP0969325A2 (en) * | 1998-07-01 | 2000-01-05 | Asm Lithography B.V. | Lithographic projection apparatus |
| US6376984B1 (en) * | 1999-07-29 | 2002-04-23 | Applied Materials, Inc. | Patterned heat conducting photocathode for electron beam source |
| CN102163007A (en) * | 2011-05-13 | 2011-08-24 | 上海集成电路研发中心有限公司 | Lithography machine imaging system for improving resolution by using photoelectric effect and imaging method thereof |
| CN111983903A (en) * | 2020-09-15 | 2020-11-24 | 北京国视神州文化传媒有限公司 | Electron beam semiconductor photoetching machine |
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| Publication number | Publication date |
|---|---|
| CN112947008B (en) | 2023-12-01 |
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