CN112938890B - High-efficiency non-contact photon thermal diode based on black phosphorus-assisted vanadium dioxide/doped silicon combination - Google Patents
High-efficiency non-contact photon thermal diode based on black phosphorus-assisted vanadium dioxide/doped silicon combination Download PDFInfo
- Publication number
- CN112938890B CN112938890B CN202110201441.8A CN202110201441A CN112938890B CN 112938890 B CN112938890 B CN 112938890B CN 202110201441 A CN202110201441 A CN 202110201441A CN 112938890 B CN112938890 B CN 112938890B
- Authority
- CN
- China
- Prior art keywords
- reverse
- black phosphorus
- layer
- heat flow
- vanadium dioxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 86
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 title claims abstract description 46
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 title claims abstract description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 40
- 239000010703 silicon Substances 0.000 title claims abstract description 40
- 239000002131 composite material Substances 0.000 claims abstract description 80
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 76
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims description 4
- 238000007738 vacuum evaporation Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 9
- 230000000052 comparative effect Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000009396 hybridization Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0083—Temperature control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0083—Temperature control
- B81B7/009—Maintaining a constant temperature by heating or cooling
- B81B7/0093—Maintaining a constant temperature by heating or cooling by cooling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Lasers (AREA)
Abstract
A high-efficiency non-contact photon thermal diode based on black phosphorus-assisted vanadium dioxide/doped silicon combination. The present invention is in the field of thermal regulators. The invention aims to solve the technical problems that the thermal rectification coefficient of the traditional thermal diode system is low, the rectification effect is poor, the rectification capacity of the traditional thermal diode system cannot be adjusted once being set, and the traditional thermal diode system lacks active adjustability. The photon thermal diode is composed of a heat flow forward port composite heterostructure and a heat flow reverse port composite heterostructure, wherein a vacuum gap is formed between the heat flow forward port composite heterostructure and the heat flow reverse port composite heterostructure and is arranged in parallel, and the heat flow reverse port composite heterostructure sequentially comprises a reverse end substrate, a reverse end thermochromic layer and a reverse end black phosphorus layer from top to bottom; the heat flow forward port composite heterostructure comprises a forward end black phosphorus layer, a forward end inner film and a forward end substrate from top to bottom in sequence, wherein the reverse end thermochromic layer is a vanadium dioxide film, and the forward end inner film is a P-type doped silicon film layer. The photon thermal diode has good rectifying effect.
Description
Technical Field
The invention belongs to the field of thermal regulators, and particularly relates to a high-efficiency non-contact photon thermal diode based on black phosphorus-assisted vanadium dioxide/doped silicon combination.
Background
The growing world of micro/nano technology has greatly facilitated the efficient miniaturization of energy conversion devices, energy storage devices, electronics, electromechanical systems, medical devices, and the like. Today, the development of digitization and informatization is rapid, and a large amount of energy generated by micro/nano technology represented by a large-scale integrated chip is mostly used for heat dissipation and cooling. The micro-nano scale heat flow control technology is a key problem of the modern technology in the aspects of heat management, energy conversion and heat-based information processing. In recent years, thermal diode operation for manipulating heat flow has attracted great interest, similar to current diode operation, due to the increasing importance of thermal information processing, thermal management of nanoelectrodes, and thermo-electric conversion. Early, due to the maturation of theory and thermal experiments, research into thermal diodes was primarily limited to being accomplished by non-reciprocal thermal conduction of phonons in nanostructured materials. However, phonon-based thermal diodes may have some limitations, such as a relatively low phonon transmission speed, and inevitably have a local Kapitza resistance, thereby greatly reducing the heat flow in the thermal diode. However, these limitations can be well overcome by the photo thermal diode based on radiative heat transfer, by the undamped nature of the photons themselves. In addition, when the distance between them is smaller or close, due to near field effects (including the excitation of polarons and photon tunneling effects), the radiative heat transfer between two objects can be greatly enhanced, thereby greatly increasing the rectification ratio of the photon thermal diode. The thermal rectification coefficient is Q forward/Qreverse -1, wherein Q forward represents the forward heat flow and Q reverse represents the reverse heat flow.
With the penetration of microscale research, in recent years scholars have found that temperature dependent dielectric functions and asymmetric nanostructures of materials can effectively induce near-field radiative thermal rectification. Vanadium dioxide (VO 2) is a typical thermochromic medium with a temperature dependent dielectric function. It can undergo a phase transition from an anisotropic insulator below 341K (supporting several phonons in the infrared region) to an isotropic metal above 341K. The thermal phase change characteristic of the vanadium dioxide is applied to radiation heat exchange, and the directional control of heat flow can be realized through the high emission characteristic of the insulating state phonon mediated at the low temperature of the vanadium dioxide and the low radiation characteristic of the metal state at the high temperature. However, due to weak phonon intensity and asymmetric structure limitation of the photon thermal diode of vanadium dioxide, the thermal rectifier related to the phonon thermochromic capability based on the vanadium dioxide has low thermal rectification coefficient and poor rectification effect, and once the rectification capability is set, the rectification capability cannot be adjusted, and active adjustability is lacking. In summary, these disadvantages will severely limit the application prospects of the photon thermal diode system based on the vanadium dioxide thermochromic characteristics in micro/nano devices. The scientific problem of finding a vanadium dioxide photon thermal diode system which is high-efficiency and adjustable is also slowly highlighted, and the system becomes a key factor for influencing and even restricting the development and application of the micro/nano equipment heat flow control technology.
Disclosure of Invention
The invention aims to solve the technical problems that the existing thermal diode system is low in thermal rectification coefficient and poor in rectification effect, and the rectification capacity of the existing thermal diode system cannot be adjusted once set and lacks active adjustability, and provides a high-efficiency non-contact photon thermal diode based on black phosphorus-assisted vanadium dioxide/doped silicon combination.
The invention relates to a black phosphorus-assisted vanadium dioxide/doped silicon combined-based high-efficiency non-contact photon thermal diode which is composed of a heat flow forward port composite heterostructure and a heat flow reverse port composite heterostructure, wherein a vacuum gap is formed between the heat flow forward port composite heterostructure and the heat flow reverse port composite heterostructure; the heat flow forward port composite heterostructure and the heat flow reverse port composite heterostructure are arranged in parallel, and the heat flow reverse port composite heterostructure comprises a reverse end substrate, a reverse end thermochromic layer and a reverse end black phosphorus layer from top to bottom in sequence; the heat flow forward port composite heterostructure comprises a forward end black phosphorus layer, a forward end inner film and a forward end substrate from top to bottom in sequence, wherein the reverse end thermochromic layer is a vanadium dioxide film, and the forward end inner film is a P-type doped silicon film layer.
Further defined, the material of the reverse side substrate is a Cu film.
Further defined, the material of the forward end substrate is a Cu film.
Further defined, the reverse end thermochromic layer is a vanadium dioxide film, and the phase transition temperature of the vanadium dioxide film is 68 ℃.
Further defined, the reverse end thermochromic layer is plated on the reverse end substrate surface by magnetron sputtering, vacuum evaporation, sol-gel or pulsed laser deposition.
Further defined, the thickness of the reverse end thermochromic layer is 1000nm to 10000nm.
Further defined, the reverse-end black phosphorus layer is a monoatomic layer of black phosphorus, and the thickness of the reverse-end black phosphorus layer is 0.437nm.
Further defined, the forward end black phosphorus layer is a monoatomic layer of black phosphorus, and the thickness of the forward end black phosphorus layer is 0.437nm.
Further defined, the reverse-end black phosphorus layer and the forward-end black phosphorus layer are both single-layer black phosphorus layers formed by a micromechanical lift-off method.
Further defined, the electron concentration of the reverse-end black phosphorus layer is 1×10 12cm-2～1×1014cm-2.
Further defined, the electron concentration of the forward end black phosphorus layer is 1×10 12cm-2～1×1014cm-2.
Further defined, the P-doped silicon film layer of the forward end inner film is obtained by: and doping trivalent element indium into the intrinsic silicon by high-temperature diffusion or ion implantation to form a P-type doped silicon film layer.
Further defined, the doping concentration of trivalent element indium in the forward end inner film is 1×10 17cm-2～1×1019cm-2.
Further defined, the positive side inner film is plated on the surface of the positive side end base through magnetron sputtering, vacuum evaporation, sol-gel or pulse laser deposition.
Further defined, the thickness of the forward end inner film is 1000nm to 10000nm.
Further defined, the vertical spacing between the thermal flow forward port composite heterostructure and the thermal flow reverse port composite heterostructure is between 10nm and 1000nm.
Further defined, a horizontal mechanical rotation is enabled between the thermal flow forward port composite heterostructure and the thermal flow reverse port composite heterostructure.
Compared with the prior art, the invention has the advantages that:
1) The invention provides a heat flow reverse port formed by a black phosphorus/vanadium dioxide composite heterostructure capable of exciting elliptic plasma polaritons-phonon polaritons, and a heat flow forward port formed by a black phosphorus/doped silicon composite heterostructure capable of exciting elliptic plasma polaritons-isotropic plasma polaritons. The effect of excimer decoupling between vanadium dioxide and/or doped silicon is effectively relieved by utilizing the hybridization between elliptic plasma polaritons, phonon polaritons and isotropic plasma polaritons when heat flows forward, and the radiation heat exchange capacity of the system in a forward conduction state is greatly improved. Meanwhile, when the system is in a reverse closing state, the vanadium dioxide is converted from an insulating state to a metal state, the hybridization effect between the black phosphorus and the metal state vanadium dioxide is poor, and the radiation heat exchange amount of the system in the reverse closing state cannot be improved due to the addition of the black phosphorus. For the above reasons, the rectification coefficient of the system is greatly improved due to the auxiliary effect of black phosphorus.
2) The invention provides the high-efficiency non-contact thermal rectifier, all parts are made of parallel films, complex microstructures such as gratings and the like are not existed, the processing difficulty is low, the process flow is simple, and the processing cost is low.
3) The original photon thermal diode has fixed rectifying capacity, and the rectifying coefficient can not be flexibly regulated and controlled according to actual needs. The invention provides a high-efficiency non-contact photon thermal diode based on black phosphorus-assisted vanadium dioxide/doped silicon combination, and due to intrinsic anisotropy of black phosphorus, the positive end composite structure and the negative end composite structure can be horizontally rotated by ensuring that the relative position of the positive end composite structure (or the negative end composite structure) is unchanged by fixing the horizontal mechanical rotation, and the system rectifying capability is flexibly regulated and controlled by applying mechanical torsion stress to the negative end composite structure (or the positive end composite structure), so that the thermal rectifying requirements under different environments are met.
4) According to the black phosphorus-assisted vanadium dioxide/doped silicon combined-based efficient non-contact photon thermal diode, the distance between the forward end composite structure and the reverse end composite structure in the black phosphorus-assisted vanadium dioxide/doped silicon combined-based efficient non-contact photon thermal diode is the vertical distance, the distance is in the nanometer level, and due to the nanometer distance, the radiation heat exchange capacity between the forward end composite structure and the reverse end composite structure can break through the black body Planck limit, so that the thermal rectifying capacity of the thermal diode is greatly improved.
Drawings
FIG. 1 is a block diagram of a high efficiency non-contact photon thermal diode based on black phosphorus assisted vanadium dioxide/doped silicon combination of the present invention; a 1-reverse end substrate, a 2-reverse end thermochromic layer, a 3-reverse end black phosphorus layer, a 4-forward end black phosphorus layer, a 5-forward end inner film, a 6-forward end substrate and a 7-vacuum gap;
FIG. 2 is a block diagram of the reverse side black phosphorus layer of FIG. 1;
FIG. 3 is a graph showing the change in the forward and reverse rectification ratio of the thermal diode at different vacuum gaps for example 1 and comparative examples 1-3;
fig. 4 is a graph of the rectification ratio of the thermal flow forward port composite heterostructure and the thermal flow reverse port composite heterostructure of example 1 at different mechanical rotation angles.
Detailed Description
Example 1 (see fig. 1): the high-efficiency non-contact photon thermal diode based on black phosphorus-assisted vanadium dioxide/doped silicon combination is composed of a heat flow forward port composite heterostructure and a heat flow reverse port composite heterostructure, and a vacuum gap 7 is formed between the heat flow forward port composite heterostructure and the heat flow reverse port composite heterostructure; the heat flow forward port composite heterostructure and the heat flow reverse port composite heterostructure are arranged in parallel, and the heat flow reverse port composite heterostructure comprises a reverse end substrate 1, a reverse end thermochromic layer 2 and a reverse end black phosphorus layer 3 from top to bottom in sequence; the heat flow forward port composite heterostructure comprises a forward end black phosphorus layer 4, a forward end inner film 5 and a forward end substrate 6 from top to bottom in sequence, wherein the reverse end thermochromic layer 2 is a vanadium dioxide film, and the forward end inner film 5 is a P-type doped silicon film layer;
When the heat flow forward port composite heterostructure is used as a heat source (600K) and the heat flow reverse port composite heterostructure is used as a cold source (300K), namely, when the heat flow flows from the forward port composite heterostructure to the reverse port composite heterostructure, the photon thermal diode is in a forward conduction state, and otherwise, is in a reverse closing state;
The materials of the reverse end substrate 1 and the forward end substrate 6 are the same and are Cu films;
The reverse end thermochromic layer 2 is a vanadium dioxide film, the phase transition temperature of the vanadium dioxide film is 68 ℃, and the reverse end thermochromic layer 2 is plated on the surface of the reverse end substrate 1 through magnetron sputtering; the thickness of the reverse end thermochromic layer 2 is 1000nm;
the reverse end black phosphorus layer 3 and the forward end black phosphorus layer 4 are both black phosphorus of monoatomic layers, the thicknesses of the two are the same and are both 0.437nm, the reverse end black phosphorus layer 3 and the forward end black phosphorus layer 4 are both single-layer black phosphorus layers formed by a micromechanical stripping method, and the electron concentrations of the reverse end black phosphorus layer 3 and the forward end black phosphorus layer 4 are the same and are both 5 multiplied by 10 13cm-2;
The P-type doped silicon film layer of the forward end inner film 5 is obtained by the following steps: doping trivalent element indium into intrinsic silicon by high-temperature diffusion to form a P-type doped silicon film layer; the doping concentration of trivalent element indium in the positive terminal inner film 5 is 1 multiplied by 10 19cm-2; the positive end inner film 5 is plated on the surface of the positive end substrate 6 through magnetron sputtering, and the thickness of the positive end inner film 5 is 1000nm;
the vertical distance between the heat flow forward port composite heterostructure and the heat flow reverse port composite heterostructure is 10 nm-1000 nm;
The horizontal mechanical rotation is realized between the heat flow forward port composite heterostructure and the heat flow reverse port composite heterostructure by applying external force, specifically, the horizontal mechanical rotation can be realized by fixing the position of the heat flow forward port composite heterostructure without changing and applying mechanical torsion stress to the heat flow reverse port composite heterostructure.
In this embodiment, the initial state of the system is no rotation angle (the initial angle is 0 °), that is, the handrail direction (Armchair) of the positive-side black phosphorus layer 4 representing the positive-side port composite heterostructure of the heat flow and the handrail direction (Armchair) of the negative-side black phosphorus layer 3 representing the negative-side port composite heterostructure of the heat flow are kept consistent, and the mechanical rotation angle represents the angle between the positive-side black phosphorus layer 4 of the positive-side port composite heterostructure of the heat flow and the handrail direction (Armchair) of the negative-side black phosphorus layer 3 of the negative-side port composite heterostructure of the heat flow.
Comparative example 1: this embodiment differs from embodiment 1 in that: the thermal flow forward port composite heterostructure and the thermal flow reverse port composite heterostructure are free of black phosphorus layers (VO 2 -Si). Other steps and parameters were the same as in example 1.
Comparative example 2: this embodiment differs from embodiment 1 in that: the thermal flow forward port composite heterostructure has a black phosphorus layer, and the thermal flow reverse port composite heterostructure has no black phosphorus layer (VO 2/BP-Si). Other steps and parameters were the same as in example 1.
Comparative example 3: this embodiment differs from embodiment 1 in that: the thermal flow forward port composite heterostructure has no black phosphorus layer, and the thermal flow reverse port composite heterostructure has the black phosphorus layer (VO 2 -BP/Si). Other steps and parameters were the same as in example 1.
As can be seen from fig. 3, the high-efficiency non-contact photon thermal diode based on the combination of vanadium dioxide/doped silicon assisted by black phosphorus in the embodiment 1 of the present application can greatly enhance the thermal rectification coefficient of the system compared with the comparative examples 1-3, and this significant enhancement is particularly significant when the vacuum gap between the reverse-side black phosphorus layer 3 and the forward-side black phosphorus layer 4 is 10nm, and it can be seen that the theoretical thermal rectification coefficient of the high-efficiency non-contact photon thermal diode proposed in the present application can approach 8.5, that is, compared with the heat flow under the forward temperature gradient, the heat flow under the reverse temperature gradient is only about ten percent under the forward temperature gradient. This higher thermal rectifying capability far exceeds that of a high efficiency non-contact photon thermal diode without the black phosphorus assisted vanadium dioxide/doped silicon combination.
The original photon thermal diode has fixed rectifying capacity, and the rectifying coefficient can not be flexibly regulated and controlled according to actual needs. The invention provides a high-efficiency non-contact photon thermal diode based on black phosphorus-assisted vanadium dioxide/doped silicon combination, and the intrinsic anisotropy of black phosphorus can flexibly regulate and control the rectifying capacity of a system through horizontal mechanical rotation between a forward end composite structure and a reverse end composite structure so as to adapt to the thermal rectifying requirements in different environments. As can be seen from fig. 4, when the mechanical rotation angle is changed from 0 ° to 90 °, the thermal rectification coefficient of the photon thermal diode provided by the invention can be flexibly adjusted from 8.5 to 4.4, so as to adapt to the parameter requirements of the thermal diode under different working environments, thereby realizing flexible control of the heat flow of the micro/nano equipment; wherein the initial angle of 0 ° represents that the handrail direction (Armchair) of the forward end black phosphorus layer 4 of the heat flow forward port composite heterostructure and the handrail direction (Armchair) of the reverse end black phosphorus layer 3 of the heat flow reverse port composite heterostructure are kept consistent, and the mechanical rotation angle represents an included angle between the forward end black phosphorus layer 4 of the heat flow forward port composite heterostructure and the handrail direction (Armchair) of the reverse end black phosphorus layer 3 of the heat flow reverse port composite heterostructure.
In conclusion, according to the black phosphorus-assisted vanadium dioxide/doped silicon combined high-efficiency non-contact photon thermal diode provided by the invention, the effect of coupling between vanadium dioxide and/doped silicon during forward circulation of heat flow is effectively relieved by utilizing the hybridization between the black phosphorus elliptic plasma polariton and the phonon polariton and the isotropic plasma polariton, and the thermal rectifying capability of the system is greatly improved. Meanwhile, based on the intrinsic anisotropy of black phosphorus, the rectification capacity of the system is flexibly regulated and controlled through horizontal mechanical rotation between the positive end composite structure and the reverse end composite structure, so that the system adapts to the thermal rectification requirements in different environments. The multistage thermal logic switch has the advantages of no power consumption, no moving parts, light weight and the like, and is particularly suitable for various micro thermal circuits.
Claims (9)
1. The high-efficiency non-contact photon thermal diode based on black phosphorus-assisted vanadium dioxide/doped silicon combination is characterized by comprising a heat flow forward port composite heterostructure and a heat flow reverse port composite heterostructure, wherein a vacuum gap (7) is formed between the heat flow forward port composite heterostructure and the heat flow reverse port composite heterostructure; the heat flow forward port composite heterostructure and the heat flow reverse port composite heterostructure are arranged in parallel, and the heat flow reverse port composite heterostructure comprises a reverse end substrate (1), a reverse end thermochromic layer (2) and a reverse end black phosphorus layer (3) from top to bottom in sequence; the heat flow forward port composite heterostructure comprises a forward end black phosphorus layer (4), a forward end inner film (5) and a forward end substrate (6) from top to bottom in sequence, the reverse end thermochromic layer (2) is a vanadium dioxide film, the forward end inner film (5) is a P-type doped silicon film layer, and horizontal mechanical rotation can be realized between the heat flow forward port composite heterostructure and the heat flow reverse port composite heterostructure.
2. The black phosphorus-assisted vanadium dioxide/doped silicon combination-based high-efficiency non-contact photon thermal diode according to claim 1, wherein the reverse side substrate (1) and the forward side substrate (6) are made of the same material and are all Cu films.
3. The black phosphorus-assisted vanadium dioxide/doped silicon combination-based high-efficiency non-contact photon thermal diode according to claim 1, wherein the reverse-side thermochromic layer (2) is a vanadium dioxide film, the phase transition temperature of the vanadium dioxide film is 68 ℃, and the reverse-side thermochromic layer (2) is plated on the surface of the reverse-side substrate (1) through magnetron sputtering, vacuum evaporation, sol-gel or pulse laser deposition.
4. The black phosphorus-assisted vanadium dioxide/doped silicon combination-based high-efficiency non-contact photon thermal diode according to claim 1, wherein the thickness of the reverse end thermochromic layer (2) is 1000 nm-10000 nm.
5. The black phosphorus-assisted vanadium dioxide/doped silicon combination-based high-efficiency non-contact photon thermal diode according to claim 1, wherein the reverse-end black phosphorus layer (3) and the forward-end black phosphorus layer (4) are black phosphorus of a single atomic layer, the thicknesses of the two are equal to 0.437nm, the reverse-end black phosphorus layer (3) and the forward-end black phosphorus layer (4) are single-layer black phosphorus layers formed by a micromechanical stripping method, and the electron concentrations of the reverse-end black phosphorus layer (3) and the forward-end black phosphorus layer (4) are equal to each other and are 1×10 12cm-2～1×1014cm-2.
6. A high-efficiency non-contact photo-thermal diode based on black phosphorus assisted vanadium dioxide/doped silicon combination according to claim 1, characterized in that the P-doped silicon film layer of the forward end inner film (5) is obtained by: and doping trivalent element indium into the intrinsic silicon by high-temperature diffusion or ion implantation to form a P-type doped silicon film layer.
7. A high-efficiency non-contact photothermal diode based on a black phosphorus assisted vanadium dioxide/doped silicon combination according to claim 6, characterized in that the doping concentration of trivalent element indium in the forward end inner film (5) is 1 x 10 17cm-2～1×1019cm-2.
8. The black phosphorus-assisted vanadium dioxide/doped silicon combination-based high-efficiency non-contact photon thermal diode according to claim 1, wherein the forward end inner film (5) is plated on the surface of the forward end substrate (6) through magnetron sputtering, vacuum evaporation, sol-gel or pulse laser deposition, and the thickness of the forward end inner film (5) is 1000 nm-10000 nm.
9. The black phosphorus-assisted vanadium dioxide/doped silicon combination-based high-efficiency non-contact photon thermal diode according to claim 1, wherein the vertical spacing between the thermal flow forward port composite heterostructure and the thermal flow reverse port composite heterostructure is between 10nm and 1000nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110201441.8A CN112938890B (en) | 2021-02-23 | 2021-02-23 | High-efficiency non-contact photon thermal diode based on black phosphorus-assisted vanadium dioxide/doped silicon combination |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110201441.8A CN112938890B (en) | 2021-02-23 | 2021-02-23 | High-efficiency non-contact photon thermal diode based on black phosphorus-assisted vanadium dioxide/doped silicon combination |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112938890A CN112938890A (en) | 2021-06-11 |
| CN112938890B true CN112938890B (en) | 2024-07-02 |
Family
ID=76245507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110201441.8A Active CN112938890B (en) | 2021-02-23 | 2021-02-23 | High-efficiency non-contact photon thermal diode based on black phosphorus-assisted vanadium dioxide/doped silicon combination |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112938890B (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5356484A (en) * | 1992-03-30 | 1994-10-18 | Yater Joseph C | Reversible thermoelectric converter |
| CN107634090B (en) * | 2016-07-19 | 2021-02-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | Two-dimensional black phosphorus PN junction, and preparation method and application thereof |
| WO2019014901A1 (en) * | 2017-07-20 | 2019-01-24 | 华为技术有限公司 | Field effect transistor and manufacturing method |
| US10403767B2 (en) * | 2017-07-23 | 2019-09-03 | Rhode Island Council On Postsecondary Education | High contrast far-field radiative thermal diode |
| CN109652765B (en) * | 2017-10-10 | 2021-03-16 | 中国科学院上海硅酸盐研究所 | High-performance and high-stability vanadium dioxide-based thermochromic coating and preparation method thereof |
-
2021
- 2021-02-23 CN CN202110201441.8A patent/CN112938890B/en active Active
Non-Patent Citations (2)
| Title |
|---|
| 基于涨落耗散理论的黑磷材料近场辐射热传输研究;易小杰;中国优秀硕士学位论文全文数据库;20191123;第13-75页 * |
| 掺杂硅与二氧化钒平板间的近场辐射传热及其热整流性能研究;杨培培;中国优秀硕士学位论文全文数据库;20200622;第24-52页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112938890A (en) | 2021-06-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8039726B2 (en) | Thermal transfer and power generation devices and methods of making the same | |
| Mahmood et al. | The first-principle study of mechanical, optical and thermoelectric properties of SnZrO3 and SnHfO3 for renewable energy applications | |
| Shakouri | Nanoscale thermal transport and microrefrigerators on a chip | |
| US10305014B2 (en) | Methods and devices for controlling thermal conductivity and thermoelectric power of semiconductor nanowires | |
| US7572973B2 (en) | Method of making devices for solid state thermal transfer and power generation | |
| US20050150537A1 (en) | Thermoelectric devices | |
| US5714791A (en) | On-chip Peltier cooling devices on a micromachined membrane structure | |
| US20050150535A1 (en) | Method for forming a thin-film thermoelectric device including a phonon-blocking thermal conductor | |
| US20070261730A1 (en) | Low dimensional thermoelectrics fabricated by semiconductor wafer etching | |
| US20050150539A1 (en) | Monolithic thin-film thermoelectric device including complementary thermoelectric materials | |
| Tang et al. | p× n-type transverse thermoelectrics: a novel type of thermal management material | |
| US10396267B2 (en) | Thermoelectric conversion element and method of manufacturing the same, and heat radiation fin | |
| Briones et al. | Seebeck nanoantennas for solar energy harvesting | |
| JP2004523094A (en) | Thermal diode for energy conversion | |
| Ordonez-Miranda et al. | Photonic thermal diode based on superconductors | |
| WO2013047254A1 (en) | Member with thermoelectric conversion function, and method for producing same | |
| US20050150536A1 (en) | Method for forming a monolithic thin-film thermoelectric device including complementary thermoelectric materials | |
| Zhao et al. | Chemical potential of photons and its implications for controlling radiative heat transfer | |
| WO2008060282A1 (en) | Thermal transfer and power generation devices and methods of making the same | |
| CN112938890B (en) | High-efficiency non-contact photon thermal diode based on black phosphorus-assisted vanadium dioxide/doped silicon combination | |
| CN108987559A (en) | A kind of thermal management system for integrated circuit based on grapheme material | |
| Verma et al. | Spin-polarized first-principles study of ferromagnetism in zinc-blende In 1− x Mn x Sb | |
| Hu et al. | Nanostructured Thermoelectric Films | |
| Zhao et al. | Near-band edge light emission from silicon semiconductor on insulator diodes | |
| Liao et al. | Performance regulation of near-field electroluminescent cooling device based on 2-D material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant |