CN112928108A - Readout chip for detector - Google Patents

Readout chip for detector Download PDF

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Publication number
CN112928108A
CN112928108A CN201911237663.4A CN201911237663A CN112928108A CN 112928108 A CN112928108 A CN 112928108A CN 201911237663 A CN201911237663 A CN 201911237663A CN 112928108 A CN112928108 A CN 112928108A
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CN
China
Prior art keywords
pad
guard ring
chip
pads
detector
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Pending
Application number
CN201911237663.4A
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Chinese (zh)
Inventor
吴宗桂
张丽
李波
杜迎帅
刘小桦
邓智
高乐
李伟宸
张萌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tsinghua University
Nuctech Co Ltd
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Tsinghua University
Nuctech Co Ltd
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Application filed by Tsinghua University, Nuctech Co Ltd filed Critical Tsinghua University
Priority to CN201911237663.4A priority Critical patent/CN112928108A/en
Publication of CN112928108A publication Critical patent/CN112928108A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures

Abstract

The application provides a read-out chip for a detector, a detector module and an X-ray system, the read-out chip for the detector comprises: a plurality of pixel input PADs PAD distributed at a central region of the readout chip arranged in a matrix; auxiliary PADs which are distributed at the edge of the reading chip and are different from the pixel input PADs; at least one guard ring internal PAD distributed between the plurality of pixel input PADs and the auxiliary PAD; and the protection ring routing PADs are distributed on the same side of the auxiliary PADs, wherein the PADs inside at least one protection ring are connected with the protection ring routing PADs so as to apply bias voltage to the PADs inside at least one protection ring through the protection ring routing PADs, and connecting lines between the PADs inside at least one protection ring and the protection ring routing PADs are not interconnected with other connecting lines in the reading chip.

Description

Readout chip for detector
Technical Field
The present disclosure relates to the field of X-ray radiation, and more particularly to a readout chip for a detector in an X-ray radiation system.
Background
The X-ray imaging system generally comprises a detector, a readout circuit/chip, data transmission and storage, and upper computer software, wherein the detector is generally a linear array or an area array photodetector, the readout circuit/chip is used for reading out an electrical signal of the detector, and the detector and the readout circuit/chip are core devices of the imaging system.
However, the technology for directly inversely installing the area array detector and the read-out chip thereof is complex, the reliability is low, and the energy resolution capability of the detector is not high enough.
Disclosure of Invention
In order to solve the above problem, in a first aspect of the present application, there is provided a readout chip for a detector, which may include: a plurality of pixel input PADs PAD distributed at a central region of the readout chip arranged in a matrix; auxiliary PADs distributed at the edge of the readout chip and different from the pixel input PADs; at least one guard ring inner PAD distributed between the plurality of pixel input PADs and the auxiliary PAD; and the protection ring routing PAD is distributed on the same side of the auxiliary PAD, wherein the PAD inside the at least one protection ring is connected with the protection ring routing PAD so as to apply bias voltage to the PAD inside the at least one protection ring through the protection ring routing PAD, and a connecting line between the PAD inside the at least one protection ring and the protection ring routing PAD is not interconnected with other connecting lines in the reading chip.
According to the first aspect of the present application, in the case that the bias applied to the guard ring bonding PAD is greater than the power supply voltage of the readout chip, the interconnection line between the PAD inside the at least one guard ring and the guard ring bonding PAD is shielded by another metal line.
According to the first aspect of the application, in case the read-out chip is used for a three-edge-tiled detector, the auxiliary PAD, the guard ring bond PAD, and the at least one guard ring inner PAD are all arranged at a side that is not tiled.
In a second aspect of the present application, there is provided a detector module, which may include: a detector; and a readout chip, the detector being flip-chip mounted on the readout chip, the readout chip comprising: a plurality of pixel input PADs PAD distributed at a central region of the readout chip arranged in a matrix; auxiliary PADs distributed at the edge of the readout chip and different from the pixel input PADs; at least one guard ring inner PAD distributed between the plurality of pixel input PADs and the auxiliary PAD; and the protection ring routing PAD is distributed on the same side of the auxiliary PAD, wherein the PAD inside the at least one protection ring is connected with the protection ring routing PAD so as to apply bias voltage to the PAD inside the at least one protection ring through the protection ring routing PAD, and a connecting line between the PAD inside the at least one protection ring and the protection ring routing PAD is not interconnected with other connecting lines in the reading chip.
According to the second aspect of the present application, in the case that the bias applied to the guard ring bonding PAD is greater than the power supply voltage of the readout chip, the interconnection line between the at least one guard ring inner PAD and the guard ring bonding PAD is shielded by other metal lines.
According to a second aspect of the application, in case the read-out chip is used for a three-edge-stitched detector, the auxiliary PAD, the guard ring bond PAD, and the at least one guard ring inner PAD are all arranged at a side that is not stitched.
In a third aspect of the application, an X-ray system is provided, comprising a detector module according to the second aspect.
The PAD specially used for being interconnected with the protection ring electrode of the detector is designed in the read-out chip, so that the reverse packaging process of the detector module can be simplified, the reliability of the detector module can be improved, the cost of the detector module can be reduced, and the energy resolution capability of the detector module can be further improved.
Drawings
The above and other embodiments and features of the present disclosure will become more apparent by describing in detail embodiments thereof with reference to the attached drawings in which:
fig. 1 schematically shows a diagram of an example arrangement of detectors and readout circuitry in an X-ray imaging system according to an embodiment of the present disclosure;
fig. 2 schematically shows a layout design diagram of a 36 × 36 pixel photon counting readout chip according to an embodiment of the present disclosure;
fig. 3 schematically shows a layout design of a read-out chip with a suitable guard ring PAD according to an embodiment of the present disclosure.
Detailed Description
Specific embodiments of the present invention will be described in detail below, and it should be noted that the embodiments described herein are only for illustration and are not intended to limit the present invention. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be apparent to one of ordinary skill in the art that: it is not necessary to employ these specific details to practice the present invention. In other instances, well-known circuits, materials, or methods have not been described in detail in order to avoid obscuring the present invention.
Throughout the specification, reference to "one embodiment," "an embodiment," "one example," or "an example" means: the particular features, structures, or characteristics described in connection with the embodiment or example are included in at least one embodiment of the invention. Thus, the appearances of the phrases "in one embodiment," "in an embodiment," "one example" or "an example" in various places throughout this specification are not necessarily all referring to the same embodiment or example. Furthermore, the particular features, structures, or characteristics may be combined in any suitable combination and/or sub-combination in one or more embodiments or examples.
It will be understood that when an element is referred to as being "coupled" or "connected" to another element, it can be directly coupled or connected to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly coupled" or "directly connected" to another element, there are no intervening elements present.
Further, as used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
It will be understood that a noun in the singular corresponding to a term may include one or more things unless the relevant context clearly dictates otherwise. As used herein, each of the phrases such as "a or B," "at least one of a and B," "at least one of a or B," "A, B or C," "at least one of A, B and C," and "at least one of A, B or C" may include all possible combinations of the items listed together with the respective one of the plurality of phrases. As used herein, terms such as "1 st" and "2 nd" or "first" and "second" may be used to distinguish one element from another element simply and not to limit the elements in other respects (e.g., importance or order).
As used herein, the term "circuitry" may include units implemented in hardware, software, or firmware, and may be used interchangeably with other terms (e.g., "logic," "logic block," "portion," or "module"). A module may be a single integrated component adapted to perform one or more functions or a minimal unit or portion of the single integrated component. For example, according to an embodiment, the modules may be implemented in the form of Application Specific Integrated Circuits (ASICs).
It should be understood that the various embodiments of the present disclosure and the terms used therein are not intended to limit the technical features set forth herein to specific embodiments, but include various changes, equivalents, or alternatives to the respective embodiments. Unless otherwise explicitly defined herein, all terms are to be given their broadest possible interpretation, including meanings implied in the specification and meanings understood by those skilled in the art and/or defined in dictionaries, papers, etc.
Further, those of ordinary skill in the art will appreciate that the drawings provided herein are for illustrative purposes and are not necessarily drawn to scale. For the description of the figures, like reference numerals may be used to refer to like or related elements. The present disclosure will be described below by way of example with reference to the accompanying drawings.
Read-out chip
In the fields of security inspection, nondestructive testing and medical imaging, in order to obtain better image quality and more accurate substance identification under lower X-ray irradiation dose, interconnection of the electrodes of the pixel type detector and the readout chip is realized through a flip-chip process by developing a large-scale pixel type detector and a pixel type single photon counting readout chip (which is a type of readout circuit/chip) matched with the large-scale pixel type detector. The interconnected detector and chip are referred to as a detector module, and a typical pixel detector module is shown in fig. 1 and mainly comprises a PCB, a readout chip (or readout circuit), bumps and a detector. One pixel type detector module can be used for independent imaging or energy spectrum detection, and radiation imaging or energy spectrum detection of a larger area can be realized through a scheme of splicing a plurality of detector modules.
In order to realize large-area imaging or energy spectrum detection of the pixel type detector module, pixel input PADs PAD in a read-out circuit/chip are generally distributed in an internal matrix of the chip, and power supply PAD, PAD of a data input/output module, PAD of a bias circuit and other PAD are generally fanned out from one side of the chip; for a chip which does not need to be spliced by multiple detectors, except that the PADs input by the pixels are distributed at the central position of the chip, other PADs can be distributed around the chip.
Fig. 2 shows a layout design schematic diagram of a 36 × 36 pixel photon counting readout chip. The input PADs of the pixel units in the figure are distributed in a matrix in the central area, and other PADs such as a power supply PAD, a PAD of a data input/output module, and a PAD of a bias circuit are distributed on the right side of the chip. Through arranging like this, a plurality of detector modules can splice in the other three directions of power PAD, data input/output module's PAD and bias circuit PAD fan-out direction.
For semiconductor single photon detectors such as cadmium zinc telluride, cadmium telluride, silicon and the like, in order to improve the energy resolution capability of the detector, a circle of protection ring can be manufactured around the anode plane of the detector, the protection ring can be used for forming an electric field and reducing the leakage current of the detector, and a unipolar sensitive charge collection mode can be realized, so that the energy resolution capability of the detector is improved.
However, typically, the guard ring of the detector is at a distance from the anode edge. Thus, for the pixel detector readout chip in the detector module in fig. 1, which implements interconnection between the detector and the readout circuit/chip by the flip-chip technology, if the PADs of the chip are still arranged as shown in fig. 2, or the chip does not specially design an interconnection PAD for the detector guard ring electrode, the guard ring electrode on the anode plane of the detector needs to be led out by other means and connected to the ground potential or other potential, for example, a metal wire can be specially made between the chip and the detector for connecting the detector guard ring electrode. This adds an extra process step and thus increases the cost of the detector module. If the detector guard ring is floating, the advantages of making the guard ring are not exploited.
To solve this problem, the present application provides a readout chip for a detector, a detector module composed of a detector and a readout chip, and an X-ray system including the detector module, wherein the readout chip for a detector may include: a plurality of pixel input PADs PAD distributed at a central region of the readout chip arranged in a matrix; auxiliary PADs which are distributed at the edge of the reading chip and are different from the pixel input PADs; at least one guard ring internal PAD distributed between the plurality of pixel input PADs and the auxiliary PAD; and the protection ring routing PADs are distributed on the same side of the auxiliary PADs, wherein the PADs inside at least one protection ring are connected with the protection ring routing PADs so as to apply bias voltage to the PADs inside at least one protection ring through the protection ring routing PADs, and connecting lines between the PADs inside at least one protection ring and the protection ring routing PADs are not interconnected with other connecting lines in the reading chip.
The layout of the 36 x 36 pixel photon counting read-out chip shown in fig. 2 is a layout suitable for a read-out chip of a three-edge spliceable detector module. The following description will be given taking as an example the read-out chip suitable for a three-side spliceable detector module, but it will be understood by those skilled in the art that the present application is not limited thereto, and the principles disclosed in the present application may be applied to any suitable read-out chip as desired.
Fig. 3 schematically shows a layout design of a read-out chip with a suitable guard ring PAD according to an embodiment of the present disclosure.
As shown in fig. 3, the plurality of pixel input PADs are distributed in a matrix in a central area of the readout chip, and other auxiliary PADs (e.g., power supply PAD, data input/output module PAD, bias circuit PAD) different from the pixel input PADs are distributed on the right side of the readout chip (in this example, the right side is considered as a side where no splicing is required).
In order not to leave the guard ring floating, the present application provides guard ring inner PADs (e.g., 17A and 17B shown in fig. 3) in the area between the pixel input PAD and the auxiliary PAD, so that when the detector is flipped on the read-out chip, the guard ring can be flipped on the read-out chip simultaneously with the detector.
To function the guard ring, a bias voltage needs to be applied to the guard ring. For this purpose, a guard ring bonding PAD is provided at a position near the guard ring inner PAD for applying a bias voltage to the guard ring inner PAD through the guard ring bonding PAD. In this example, the guard ring bond PAD may be disposed at the same side as the auxiliary PAD. It should be understood by those skilled in the art that the location of the guard ring bonding PAD is not limited thereto, and for example, may be provided at a position on the lower side or the upper side of the PAD inside the guard ring, which may be differently set according to the requirement.
When the reading chip is used, the PADs 17A and 17B inside the guard ring are interconnected with the guard ring routing PAD 17, and other metal connecting wires in different reading chips are connected.
Preferably, in the case that the bias voltage applied to the guard ring bonding PAD is larger than the power voltage of the readout chip, the connection line between the guard ring inner PADs 17A and 17B and the guard ring bonding PAD 17 can be shielded by a ground line or other metal line, so as to effectively prevent the connection line between the guard ring inner PADs 17A and 17B and the guard ring bonding PAD 17 from interfering with other connection lines in the readout chip.
And under the condition that the bias voltage applied to the protective ring routing PAD is smaller than the power supply voltage of the reading chip, the interconnection line between the PAD inside at least one protective ring and the protective ring routing PAD can be shielded by other metal wires or can not be shielded.
In an exemplary embodiment, multiple sets of guard ring inner PADs 17A and 17B and guard ring bond PADs 17 may be provided on one side of the sense die as desired, such as shown at 18 in fig. 3.
In an exemplary embodiment, the number of PADs inside the guard ring may be one or more.
As described above, the chip layout shown in fig. 3 is a chip suitable for a detector module with three sides capable of being spliced, and under the condition that the spliced detector module is not needed, the guard ring inner PADs 17A and 17B and the guard ring bonding PAD 17 may be disposed on any side of the read-out chip.
Alternatively, guard ring inner PADs 17A and 17B may be disposed on one side of the sense chip, while guard ring bond PAD 17 is disposed on the other side of the sense chip.
Alternatively, the guard ring inner PADs 17A, 17B and the guard ring bonding PAD 17 may be provided between the auxiliary PADs.
Detector Module
An improved readout chip with guard ring inner PAD and guard ring bond PAD according to embodiments of the present application has been described above with reference to fig. 3.
Based on the improved reading chip, the detector can be flip-chip mounted on the improved reading chip by using a flip-chip technology, and meanwhile, the protection ring is correspondingly connected to the inner PAD of the protection ring on the reading chip, so that a new detector module is formed.
X-ray system
Based on the new detector module described above, a new X-ray system can be formed.
For the sake of simplifying the description, the new detector module and the new X-ray system comprising it will not be described again.
Although the above embodiments are described by taking a pixel type photon single counter chip as an example, it should be understood by those skilled in the art that the technical solutions set forth in the present disclosure can be used in any other suitable circuit.
Furthermore, although the above description has been made taking as an example a semiconductor detector, it will be understood by those skilled in the art that the detector is not limited to semiconductor detectors and may be, for example, silicon, photodiodes, cadmium zinc telluride, cadmium telluride; nor to scintillators or other detectors, such as perovskite detectors.
The above description has been mainly made in hardware, but it should be understood by those skilled in the art that corresponding hardware can correspondingly execute a corresponding method.
For simplicity of description, the functions and methods performed by the hardware circuitry will not be set forth in detail herein.
Those skilled in the art will appreciate that various combinations and/or combinations of features recited in the various embodiments and/or claims of the present disclosure can be made, even if such combinations or combinations are not expressly recited in the present disclosure. In particular, various combinations and/or combinations of the features recited in the various embodiments and/or claims of the present disclosure may be made without departing from the spirit or teaching of the present disclosure. All such combinations and/or associations are within the scope of the present disclosure.
The embodiments of the present disclosure have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. Although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the present disclosure, and such alternatives and modifications are intended to be within the scope of the present disclosure.

Claims (7)

1. A readout chip for a detector, comprising:
a plurality of pixel input PADs PAD distributed at a central region of the readout chip arranged in a matrix;
auxiliary PADs distributed at the edge of the readout chip and different from the pixel input PADs;
at least one guard ring inner PAD distributed between the plurality of pixel input PADs and the auxiliary PAD; and
guard ring bonding PAD distributed at the same side of the auxiliary PAD, wherein
The at least one guard ring inner PAD is connected with the guard ring routing PAD so as to apply bias voltage to the at least one guard ring inner PAD through the guard ring routing PAD, and a connecting line between the at least one guard ring inner PAD and the guard ring routing PAD is not interconnected with other connecting lines in the reading chip.
2. The readout chip of claim 1,
and under the condition that the bias voltage applied to the guard ring routing PAD is greater than the power supply voltage of the reading chip, the interconnection line between the PAD inside the at least one guard ring and the guard ring routing PAD is shielded by other metal wires.
3. The readout chip of claim 1,
in case the read-out chip is used for a three-edge-stitched detector, the auxiliary PAD, the guard ring PAD, and the at least one guard ring inner PAD are all arranged at a side which is not stitched.
4. A detector module, comprising:
a detector; and
a readout chip, said detector flip-chip mounted on said readout chip, said readout chip comprising:
a plurality of pixel input PADs PAD distributed at a central region of the readout chip arranged in a matrix;
auxiliary PADs distributed at the edge of the readout chip and different from the pixel input PADs;
at least one guard ring inner PAD distributed between the plurality of pixel input PADs and the auxiliary PAD; and
guard ring bonding PAD distributed at the same side of the auxiliary PAD, wherein
The at least one guard ring inner PAD is connected with the guard ring routing PAD so as to apply bias voltage to the at least one guard ring inner PAD through the guard ring routing PAD, and a connecting line between the at least one guard ring inner PAD and the guard ring routing PAD is not interconnected with other connecting lines in the reading chip.
5. The detector module of claim 4,
and under the condition that the bias voltage applied to the guard ring routing PAD is greater than the power supply voltage of the reading chip, the interconnection line between the PAD inside the at least one guard ring and the guard ring routing PAD is shielded by other metal wires.
6. The detector module of claim 4,
in case the read-out chip is used for a three-edge-stitched detector, the auxiliary PAD, the guard ring PAD, and the at least one guard ring inner PAD are all arranged at a side which is not stitched.
7. An X-ray system comprising a detector module according to any one of claims 4-6.
CN201911237663.4A 2019-12-05 2019-12-05 Readout chip for detector Pending CN112928108A (en)

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Application Number Priority Date Filing Date Title
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116884985A (en) * 2023-09-08 2023-10-13 无锡鉴微华芯科技有限公司 Readout pixel chip of pixel detector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116884985A (en) * 2023-09-08 2023-10-13 无锡鉴微华芯科技有限公司 Readout pixel chip of pixel detector

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