CN112919473A - Method for synthesizing low-nitrogen high-purity silicon carbide powder - Google Patents
Method for synthesizing low-nitrogen high-purity silicon carbide powder Download PDFInfo
- Publication number
- CN112919473A CN112919473A CN202110438088.5A CN202110438088A CN112919473A CN 112919473 A CN112919473 A CN 112919473A CN 202110438088 A CN202110438088 A CN 202110438088A CN 112919473 A CN112919473 A CN 112919473A
- Authority
- CN
- China
- Prior art keywords
- crucible
- small
- powder
- silicon carbide
- furnace chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 229910052757 nitrogen Inorganic materials 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 25
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 230000002194 synthesizing effect Effects 0.000 title claims abstract description 16
- 239000000843 powder Substances 0.000 claims abstract description 22
- 239000002994 raw material Substances 0.000 claims abstract description 22
- 238000003786 synthesis reaction Methods 0.000 claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 12
- 238000001816 cooling Methods 0.000 claims abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 41
- 229910002804 graphite Inorganic materials 0.000 claims description 27
- 239000010439 graphite Substances 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 3
- 238000011068 loading method Methods 0.000 claims description 2
- 239000011148 porous material Substances 0.000 claims description 2
- 238000002156 mixing Methods 0.000 abstract description 6
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 238000000462 isostatic pressing Methods 0.000 description 12
- 239000011863 silicon-based powder Substances 0.000 description 12
- 239000011812 mixed powder Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000005201 scrubbing Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/984—Preparation from elemental silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a method for synthesizing low-nitrogen high-purity silicon carbide powder, and relates to the technical field of silicon carbide synthesis; specifically, raw material powder is filled in a crucible with an exhaust hole, the crucible is placed in a furnace, and the furnace chamber is vacuumized and then heated; then injecting high-purity H into the furnace chamber2To 750-‑6‑5.5×10‑6mbar; repeating the steps for multiple times, heating the furnace chamber and adding high-purity Ar and H2Injecting into furnace chamber at flow ratio of 9-10.5:1, performing synthetic reaction and conversion synthetic reaction, and adding Ar and H2Cooling to room temperature under the protection of (1); the invention can effectively reduce the nitrogen concentration in the powder synthesis process and improve the powder purity; effectively avoid mixing raw materials at the powder synthetic in-process effusion crucible, promote the reaction efficiency of powder.
Description
Technical Field
The invention relates to the technical field of electronic industry and semiconductor materials, in particular to the technical field of silicon carbide synthesis, and particularly relates to a method for synthesizing low-nitrogen high-purity silicon carbide powder.
Background
The high-purity semi-insulating silicon carbide single crystal substrate is a key material of electronic components, and the content of donor impurity nitrogen in the substrate must be controlled at a lower level to grow the high-purity semi-insulating single crystal substrate with high resistivity and excellent electrical properties. Fundamentally, it is necessary to reduce the nitrogen content in the high purity silicon carbide powder for growing single crystals. At present, a self-propagating method is generally adopted to synthesize high-purity silicon carbide powder by using high-purity graphite powder and high-purity silicon powder as raw materials, however, the granularity of the high-purity graphite powder and the high-purity silicon powder is smaller and is in the micron level, so the surface of the powder can adsorb nitrogen, in addition, the powder is stacked more densely and the mixed raw materials are placed in a graphite crucible with better tightness for powder synthesis, so that nitrogen mixed in the raw materials is difficult to escape from the graphite crucible in the synthesis process, and is inevitably mixed into the crystal lattices of the synthesized silicon carbide powder, so that the nitrogen content in the silicon carbide powder is high, and the growth use requirement of the high-purity semi-insulating silicon carbide single crystal cannot be met.
Disclosure of Invention
The invention overcomes the defects of the prior art, and provides a method for synthesizing low-nitrogen high-purity silicon carbide powder, so as to reduce the nitrogen concentration in the powder synthesizing process and improve the powder purity.
In order to achieve the above object, the present invention is achieved by the following technical solutions.
A method for synthesizing low-nitrogen high-purity silicon carbide powder comprises the following steps:
a) loading the raw material powder into a crucible, placing the crucible in a furnace, and vacuumizing the furnace chamber to 4.5 × 10-6-5.5×10-6mbar, and then heating the furnace chamber until the temperature of the furnace chamber reaches 950 ℃ and 1050 ℃; the crucible is provided with a pore passage for exhausting gas.
b) Injecting high-purity H into furnace chamber2To 750--6-5.5×10-6mbar。
c) Repeating the step b for multiple times, and finally keeping the vacuum degree in the furnace cavity at 4.5 multiplied by 10-6-5.5×10-6mbar。
d) Heating the furnace chamber to 1050-2Injecting the mixture into a furnace chamber at a flow ratio of 9-10.5:1, keeping the pressure at 750-850mbar, and then heating to 1150-1300 ℃ for the synthetic reaction.
e) The synthesis time lasts for 4-6 h; then heating to 1900-2100 ℃ for conversion synthesis reaction, wherein the conversion synthesis time lasts for 9-10 h; then at Ar and H2Cooling to room temperature under the protection of (1).
Preferably, step b is repeated more than or equal to 4 times.
Preferably, the crucible comprises a large crucible and a plurality of small crucibles arranged in the large crucible, the crucible cover and the crucible wall of the large crucible are provided with through holes, the small crucibles are spaced from each other, the periphery of each small crucible is provided with a gas permeable space, and the raw material powder is arranged in the small crucibles.
Preferably, the side wall of the small crucible and the inner wall of the large crucible are arranged at intervals, and the bottom of the small crucible and the bottom of the large crucible are arranged at intervals.
Preferably, a porous graphite sheet is arranged between the crucible cover and the small crucible.
Preferably, the large crucible and the small crucible are both isostatic graphite crucibles.
Preferably, the small crucible is arranged in an open manner.
More excellent, the crucible wall of little crucible one side exceeds opposite side crucible wall, and big crucible is put into to a plurality of little crucibles through piling up from top to bottom the one side crucible wall that exceeds. Compared with the prior art, the invention has the following beneficial effects:
1. firstly, when the furnace chamber is not heated, the furnace chamber is pumped to high vacuum, so that nitrogen in the gaps of the mixed powder can effectively escape from the crucible; implantation of H2The scrubbing is performed because of H2The molecular volume is small, and the molecular volume can effectively permeate into the gaps of the raw materials, and in addition, the raw materials of the invention have small stacking thickness and H2Can be fully diffused in the raw material gap, and is beneficial to further discharging residual nitrogen in the raw material gap; thirdly, gas washing is carried out at the temperature of 950-1050 ℃ because the graphite powder silicon powder does not start to react at the temperature, and the nitrogen adsorbed on the surface of the powder can be desorbed along with the rise of the temperature, and simultaneously, because of H2High thermal conductivity, and from the above, H2Can be sufficiently diffused in the gap of the raw material, and thus, passes through H2The heat conduction can fully heat the graphite powder silicon powder, fully desorb the gas adsorbed on the surface, and can be accompanied with H in the air exhaust process2Viscous gas flow escapes from the crucible; fourthly, H is introduced2The synthesis reaction is carried out under the conditions of (1) because of H2High diffusion coefficient, full contact with graphite powder and H2The heat conductivity coefficient is large, and heat can be effectively conducted to the graphite powder silicon powder, so that the raw material is heated uniformly and sufficiently, and the reaction efficiency is improved.
2. The invention adopts the form of a large crucible and a small crucible: firstly, a plurality of small crucibles are arranged in the device, the originally concentrated powder is separated, the stacking thickness of the mixed powder is greatly reduced, and nitrogen in the stacking gap of the mixed powder is easy to escape from a material mixing area in the air exhaust process; the small crucibles are separated from each other, so that the transmission of gas in the mixed powder of the lower crucible is promoted; the opening of the crucible wall and the opening of the crucible cover can more effectively promote the nitrogen to fully escape from the crucible; placing the porous graphite sheet on the upper part of the small crucible to slow down the air extraction rate and form a barrier layer to prevent the mixed high-purity graphite powder or high-purity silicon powder from directly escaping from the crucible through the wall hole of the crucible and the cover hole of the crucible.
The invention can effectively reduce the nitrogen concentration in the powder synthesis process and improve the powder purity; effectively avoid mixing raw materials at the powder synthetic in-process effusion crucible, promote the reaction efficiency of powder.
Drawings
FIG. 1 is a schematic view of the crucible assembly structure according to the present invention.
FIG. 2 is a view showing the direction of the gas flow in the powder composition in the crucible according to the present invention.
In the figure, 1 is a crucible cover; 2 is a first through small hole; 3, isostatic pressing graphite crucible; 4 is a second through hole; 5 is a porous graphite sheet; 6, a material-containing isostatic-pressure graphite small crucible; and 7 is mixed powder of high-purity graphite powder and high-purity silicon powder.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail with reference to the embodiments and the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. The technical solution of the present invention is described in detail below with reference to the embodiments and the drawings, but the scope of protection is not limited thereto.
This example provides a new silicon carbide powder synthesis assembly scheme, as shown in fig. 1: the crucible for synthesizing silicon carbide powder comprises an isostatic pressing graphite crucible 3 and six small hollow and circular material containing isostatic pressing graphite crucibles 6 arranged in the isostatic pressing graphite crucible 3, wherein a plurality of first through small holes 2 are formed in a crucible cover 1 of the isostatic pressing graphite crucible 3, a plurality of second through small holes 4 are formed in the crucible wall of the isostatic pressing graphite crucible 3, every three small material containing isostatic pressing graphite crucibles 6 are stacked up and down layer by layer, most of the crucible wall on one side of the small material containing isostatic pressing graphite crucible 6 is higher than a small part of the crucible wall on the other side, thus, the crucible walls are supported and stacked through the raised crucible walls, so that an exhaust outlet is still reserved on each layer of the small isostatic graphite crucible 6, each stack of the small isostatic graphite crucibles 6 is separated from each other, a concave ventilation channel is reserved at the bottom of the isostatic pressing graphite crucible 3, so that a gap is reserved between the bottom of the lowest layer material containing isostatic pressing graphite small crucible 6 and the bottom of the isostatic pressing graphite crucible 3. A layer of porous graphite sheet 5 is arranged in front of the crucible cover 1 and the uppermost material containing isostatic pressure graphite small crucible 6. The material-containing isostatic-pressing graphite small crucible 6 is filled with mixed powder 7 of high-purity graphite powder and high-purity silicon powder.
The advantages of the above assembly scheme are: firstly, small material-containing crucibles are arranged in the mixing chamber in a stacking manner, so that the stacking thickness of mixed powder is greatly reduced, and nitrogen in the stacking gap of the mixed powder is easy to escape from a material mixing area in the air exhaust process; the small material containing crucibles are separated from each other, so that the transmission of gas in the mixed powder of the lower crucible is promoted; the opening of the crucible wall and the opening of the crucible cover can more effectively promote the nitrogen to fully escape from the crucible; placing porous graphite sheets on the upper part of the stacked small crucibles can slow down the air extraction rate and form a layer of barrier layer to prevent the mixed high-purity graphite powder or high-purity silicon powder from directly escaping from the crucibles through the wall holes of the crucibles and the cover holes of the crucibles.
The assembled isostatic graphite crucible 3 is placed in a synthesis furnace, and the furnace chamber is vacuumized to 5 multiplied by 10 when the heating is not started-6mbar, heating under vacuum, and injecting high-purity H into the furnace chamber when the temperature reaches 1000 deg.C2To 800mbar for 10 minutes and then to 5X 10-6mbar, followed by another injection of high purity H2To 800mbar for 10 minutes, and subsequently to 5X 10-6mbar, reciprocating 4 times in such a way that the vacuum in the apparatus is maintained at 5X 10-6mbar。
Then slowly raising the temperature to be slightly lower than 1100 ℃, and mixing high-purity Ar and H2Injecting into a furnace chamber at a flow ratio of 10:1, maintaining the pressure at 800mbar, slowly heating to 1150-1300 deg.C for synthesis reaction for 5h, and rapidly heating to 1900-2100 deg.C for conversion synthesis reaction for 10 h.
Followed by reaction with H at Ar2The temperature is reduced to room temperature under the protection of (1), and the experiment is finished.
The advantages of the above steps are: firstlyWhen the heating is not started, the furnace chamber is pumped to high vacuum, so that nitrogen in the gaps of the mixed powder can effectively escape from the crucible (shown by a gas flow diagram in fig. 2); implantation of H2The scrubbing is performed because of H2Small molecular size, effective penetration into the gaps between the raw materials, and small raw material stacking thickness, H2Can be fully diffused in the raw material gap, and is beneficial to further discharging residual nitrogen in the raw material gap; thirdly, the gas washing is carried out at 1000 ℃ because the graphite powder silicon powder does not start to react at the temperature, and the nitrogen adsorbed on the surface of the powder can be desorbed along with the rise of the temperature, and simultaneously, because of H2High thermal conductivity, and from the above, H2Can be sufficiently diffused in the gap of the raw material, and thus, passes through H2The heat conduction can fully heat the graphite powder silicon powder, fully desorb the gas adsorbed on the surface, and can be accompanied with H in the air exhaust process2Viscous gas flow escapes from the crucible; fourthly, H is introduced2The synthesis reaction is carried out under the conditions of (1) because of H2High diffusion coefficient, full contact with graphite powder and H2The heat conductivity coefficient is large, and heat can be effectively conducted to the graphite powder silicon powder, so that the raw material is heated uniformly and sufficiently, and the reaction efficiency is improved.
While the invention has been described in further detail with reference to specific preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (8)
1. The method for synthesizing the low-nitrogen high-purity silicon carbide powder is characterized by comprising the following steps of:
a) loading the raw material powder into a crucible, placing the crucible in a furnace, and vacuumizing the furnace chamber to 4.5 × 10-6-5.5×10- 6mbar, and then heating the furnace chamber until the temperature of the furnace chamber reaches 950 ℃ and 1050 ℃; the crucible is provided with a row for arrangingA pore channel for gas;
b) injecting high-purity H into furnace chamber2To 750--6-5.5×10-6mbar；
c) Repeating the step b for multiple times, and finally keeping the vacuum degree in the furnace cavity at 4.5 multiplied by 10-6-5.5×10-6mbar；
d) Heating the furnace chamber to 1050-2Injecting the mixture into a furnace chamber at a flow ratio of 9-10.5:1, keeping the pressure at 750-850mbar, and then heating to 1150-1300 ℃ for synthesis reaction;
e) the synthesis time lasts for 4-6 h; then heating to 1900-2100 ℃ for conversion synthesis reaction, wherein the conversion synthesis time lasts for 9-10 h; then at Ar and H2Cooling to room temperature under the protection of (1).
2. The method for synthesizing the silicon carbide powder with low nitrogen content and high purity according to claim 1, wherein the repetition frequency of the step b is not less than 4.
3. The method for synthesizing silicon carbide powder with low nitrogen content and high purity as claimed in claim 1, wherein the crucible comprises a large crucible and a plurality of small crucibles arranged in the large crucible, the crucible cover and the crucible wall of the large crucible are both provided with through holes, the plurality of small crucibles are spaced from each other, the outer periphery of the small crucibles are provided with gas permeable spaces, and the raw material powder is arranged in the small crucibles.
4. The method for synthesizing the silicon carbide powder with low nitrogen content and high purity as claimed in claim 3, wherein the side wall of the small crucible is spaced from the inner wall of the large crucible, and the bottom of the small crucible is spaced from the bottom of the large crucible.
5. The method for synthesizing the silicon carbide powder with low nitrogen content and high purity according to claim 3, wherein a porous graphite sheet is arranged between the crucible cover and the small crucible.
6. The method for synthesizing the silicon carbide powder with low nitrogen content and high purity according to claim 3, wherein the large crucible and the small crucible are both isostatic graphite crucibles.
7. The method for synthesizing the silicon carbide powder with low nitrogen content and high purity according to claim 3, wherein the small crucible is arranged in an open manner.
8. The method for synthesizing the low-nitrogen high-purity silicon carbide powder as claimed in claim 7, wherein the wall of one side of the small crucible is higher than the wall of the other side of the small crucible, and a plurality of small crucibles are stacked up and down through the raised wall of one side and then placed into the large crucible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110438088.5A CN112919473A (en) | 2021-04-22 | 2021-04-22 | Method for synthesizing low-nitrogen high-purity silicon carbide powder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110438088.5A CN112919473A (en) | 2021-04-22 | 2021-04-22 | Method for synthesizing low-nitrogen high-purity silicon carbide powder |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112919473A true CN112919473A (en) | 2021-06-08 |
Family
ID=76174705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110438088.5A Pending CN112919473A (en) | 2021-04-22 | 2021-04-22 | Method for synthesizing low-nitrogen high-purity silicon carbide powder |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112919473A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113772675A (en) * | 2021-11-12 | 2021-12-10 | 山西烁科晶体有限公司 | Purification method of semiconductor grade silicon powder |
| CN114634367A (en) * | 2022-03-31 | 2022-06-17 | 西安航空制动科技有限公司 | Process device for infiltration of reaction melt |
| CN114877680A (en) * | 2022-05-13 | 2022-08-09 | 连城凯克斯科技有限公司 | Gas conversion device for silicon carbide vertical induction synthesis furnace |
| CN116553555A (en) * | 2023-07-07 | 2023-08-08 | 通威微电子有限公司 | Synthesis method of large kilogram silicon carbide powder and silicon carbide powder |
| CN116623284A (en) * | 2023-05-30 | 2023-08-22 | 江苏超芯星半导体有限公司 | Silicon carbide and growth device and growth method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0275614A1 (en) * | 1987-01-20 | 1988-07-27 | The Carborundum Company | System for preventing decomposition of silicon carbide articles during sintering |
| CN211056727U (en) * | 2019-09-09 | 2020-07-21 | 山东天岳先进材料科技有限公司 | Crucible assembly for synthesizing silicon carbide powder |
| CN111484019A (en) * | 2020-04-27 | 2020-08-04 | 山西烁科晶体有限公司 | Preparation method of high-purity silicon carbide powder for single crystal growth |
-
2021
- 2021-04-22 CN CN202110438088.5A patent/CN112919473A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0275614A1 (en) * | 1987-01-20 | 1988-07-27 | The Carborundum Company | System for preventing decomposition of silicon carbide articles during sintering |
| CN211056727U (en) * | 2019-09-09 | 2020-07-21 | 山东天岳先进材料科技有限公司 | Crucible assembly for synthesizing silicon carbide powder |
| CN111484019A (en) * | 2020-04-27 | 2020-08-04 | 山西烁科晶体有限公司 | Preparation method of high-purity silicon carbide powder for single crystal growth |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113772675A (en) * | 2021-11-12 | 2021-12-10 | 山西烁科晶体有限公司 | Purification method of semiconductor grade silicon powder |
| CN114634367A (en) * | 2022-03-31 | 2022-06-17 | 西安航空制动科技有限公司 | Process device for infiltration of reaction melt |
| CN114634367B (en) * | 2022-03-31 | 2024-02-09 | 西安航空制动科技有限公司 | Process device for infiltration of reaction melt |
| CN114877680A (en) * | 2022-05-13 | 2022-08-09 | 连城凯克斯科技有限公司 | Gas conversion device for silicon carbide vertical induction synthesis furnace |
| CN114877680B (en) * | 2022-05-13 | 2023-09-22 | 连城凯克斯科技有限公司 | Gas conversion device for silicon carbide vertical induction synthesis furnace |
| CN116623284A (en) * | 2023-05-30 | 2023-08-22 | 江苏超芯星半导体有限公司 | Silicon carbide and growth device and growth method thereof |
| CN116623284B (en) * | 2023-05-30 | 2024-02-23 | 江苏超芯星半导体有限公司 | Silicon carbide and growth device and growth method thereof |
| CN116553555A (en) * | 2023-07-07 | 2023-08-08 | 通威微电子有限公司 | Synthesis method of large kilogram silicon carbide powder and silicon carbide powder |
| CN116553555B (en) * | 2023-07-07 | 2023-09-26 | 通威微电子有限公司 | Synthesis method of large kilogram of silicon carbide powder |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112919473A (en) | Method for synthesizing low-nitrogen high-purity silicon carbide powder | |
| CN107723798B (en) | Growth device and method for efficiently preparing high-purity semi-insulating silicon carbide single crystal | |
| RU2010123917A (en) | METHOD FOR PRODUCING LARGE HOMOGENEOUS SILICON CARBIDE CRYSTALS USING SUBJECT AND CONDENSATION PROCESSES | |
| CN106698436B (en) | A kind of preparation method of high-purity silicon carbide powder | |
| CN113249792A (en) | Silicon carbide crystal growth method and equipment for adjusting component balance | |
| CN1990910A (en) | Film forming apparatus, operating method thereof and storage medium for operating the method | |
| KR102000798B1 (en) | Process for high-pressure nitrogen annealing of metal nitrides | |
| CN111484019A (en) | Preparation method of high-purity silicon carbide powder for single crystal growth | |
| CN112159952B (en) | Device and method capable of simultaneously carbonizing multiple tantalum sheets | |
| CN101805927A (en) | Grower of high-purity semi-insulating silicon carbide single crystal | |
| US6881680B2 (en) | Low nitrogen concentration carbonaceous material and manufacturing method thereof | |
| JPH10509689A (en) | Method and apparatus for producing silicon carbide single crystal by sublimation breeding | |
| CN109183143B (en) | Method for improving AlN single crystal purity by using reducing gas | |
| JP4394120B2 (en) | Substrate processing apparatus and semiconductor device manufacturing method | |
| CN218741883U (en) | Crucible for synthesizing low-nitrogen high-purity silicon carbide powder | |
| RU2526382C2 (en) | Method of synthesising polycrystals of semiconductor compound of groups ii-vi | |
| CN108130592B (en) | A kind of preparation method of high-purity semi-insulating silicon carbide monocrystalline | |
| CN110144568B (en) | Gas-phase reaction furnace for preparing nano material | |
| JP4324418B2 (en) | Substrate processing apparatus and semiconductor device manufacturing method | |
| JP2008053605A (en) | Manufacturing method of semiconductor device and layer formation control method | |
| CN109336114B (en) | Method for improving synthesis efficiency of high-purity silicon carbide powder | |
| CN215976142U (en) | Silicon carbide powder synthesizer | |
| CN1207756C (en) | Preparation method of ZnAl*0*/alpha-Al*0*composite base material | |
| CN111362701A (en) | Preparation device of silicon carbide crystal block, silicon carbide crystal block and preparation method thereof | |
| CN112979335B (en) | Preparation method of aluminum nitride porous raw material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210608 |