CN112917720A - Wire cutting device and wire cutting method - Google Patents
Wire cutting device and wire cutting method Download PDFInfo
- Publication number
- CN112917720A CN112917720A CN202110119045.0A CN202110119045A CN112917720A CN 112917720 A CN112917720 A CN 112917720A CN 202110119045 A CN202110119045 A CN 202110119045A CN 112917720 A CN112917720 A CN 112917720A
- Authority
- CN
- China
- Prior art keywords
- crystal bar
- cutting
- contact plate
- wire
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005520 cutting process Methods 0.000 title claims abstract description 83
- 238000000034 method Methods 0.000 title claims abstract description 9
- 239000013078 crystal Substances 0.000 claims abstract description 69
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 235000012431 wafers Nutrition 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 description 9
- 239000010959 steel Substances 0.000 description 9
- 239000004570 mortar (masonry) Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 239000000110 cooling liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The invention relates to a wire cutting device, which is used for cutting a crystal bar and comprises two wire guide wheels which are oppositely arranged, a plurality of cutting wires which are wound between the two wire guide wheels, a crystal bar workpiece for fixing the crystal bar and a lifting structure, wherein the lifting structure is used for controlling the crystal bar workpiece to descend so that the crystal bar is contacted with the cutting wires or controlling the crystal bar workpiece to ascend so that the crystal bar is separated from the cutting wires, and the crystal bar workpiece comprises a pre-contact plate which is used for being connected with a cutting initial surface of the crystal bar. The invention also relates to a linear cutting method. Through the setting of contact plate in advance, when the crystal bar cuts for contact plate in advance and the line of cut contact earlier, avoid the initial face of cutting of crystal bar and the line of cut contact to produce the heat set, and then prevent that the silicon chip from producing the thermal energy because the heat set.
Description
Technical Field
The invention relates to the technical field of silicon product manufacturing, in particular to a linear cutting device and a linear cutting method.
Background
A silicon wafer widely used as a material for manufacturing semiconductor elements is a single crystal silicon thin plate. The ingot formed in a cylindrical state was subjected to wire slicing using a high tensile steel wire to form individual silicon wafers. A wire-cut ingot cutting apparatus includes a plurality of steel wires, and a main wire wheel wound around the plurality of steel wires and rotating at a high speed. The steel wire runs at a high speed under the guidance of the main wire guide wheel, and the steel wire passes through the crystal bar to cut the crystal bar into single silicon wafers. However, in the initial stage of slicing of an ingot, the ingot at normal temperature thermally expands due to rapidly generated heat, and the thermal expansion of the ingot induces silicon wafer bending during slicing of the ingot, thereby reducing the flatness of the sliced surface of the ingot.
Disclosure of Invention
In order to solve the above technical problems, the present invention provides a wire cutting apparatus and a wire cutting method, which solve the problem that thermal expansion is likely to occur at the initial stage of cutting a crystal bar.
In order to achieve the purpose, the embodiment of the invention adopts the technical scheme that: a wire cutting device is used for cutting a crystal bar and comprises two wire guide wheels which are oppositely arranged, a plurality of cutting lines which are wound between the two wire guide wheels and used for fixing a crystal bar workpiece of the crystal bar, and a lifting structure, wherein the lifting structure is used for controlling the crystal bar workpiece to descend so that the crystal bar is contacted with the cutting lines or controlling the crystal bar workpiece to ascend so that the crystal bar is separated from the cutting lines, and the crystal bar workpiece comprises a pre-contact plate which is used for being connected with a cutting initial surface of the crystal bar.
Optionally, the pre-contact plate is made of polysilicon.
Optionally, the pre-contact plate comprises a first surface for contacting with the cutting initial surface of the crystal bar, and the shape of the first surface is consistent with that of the cutting initial surface of the crystal bar.
Optionally, the pre-contact plate includes a second surface opposite to the first surface, and the second surface is a planar structure.
Optionally, the first thickness of the pre-contact plate perpendicular to the extending direction of the pre-contact plate is greater than or equal to 100mm, the second thickness of the pre-contact plate is 10mm to 15mm, the pre-contact plate includes a central portion and edge portions located on two opposite sides of the central portion in the direction perpendicular to the extending direction of the pre-contact plate, the thickness of the edge portions is the first thickness, and the thickness of the central portion is the second thickness.
Optionally, the length of the pre-contact plate in the extending direction is not less than the length of the crystal bar.
The invention relates to a linear cutting method, which is applied to the linear cutting device and comprises the following steps:
fixing a pre-contact plate on the initial cutting surface of the crystal bar;
when the wire guide wheel drives the cutting line to rotate, the crystal bar provided with the pre-contact plate moves towards the direction close to the cutting line under the control of the lifting structure, so that the crystal bar is cut into silicon wafers.
The invention has the beneficial effects that: the setting of contactor in advance when the crystal bar cuts for the contactor in advance contacts with the line of cut earlier, avoids the initial face of cutting of crystal bar and the line of cut contact to produce the heat set, and then prevents that the silicon chip from producing the thermal energy because the heat set.
Drawings
FIG. 1 is a schematic view of a wire cutting apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a pre-contact structure according to an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
As shown in fig. 1 and fig. 2, the present embodiment provides a wire cutting apparatus for cutting an ingot, including two wire guide wheels 5 disposed opposite to each other, a plurality of cutting wires 6 wound between the two wire guide wheels 5, an ingot workpiece for fixing an ingot 10, and a lifting structure 1 for controlling the ingot workpiece to descend so that the ingot contacts with the cutting wires, or controlling the ingot workpiece to ascend so that the ingot is out of contact with the cutting wires, wherein the ingot workpiece includes a pre-contact plate 2 for connecting with a cutting initial surface of the ingot.
The crystal bar workpiece comprises a resin plate 3 and a fixing plate 4 and is used for fixing a crystal bar 10 and suspending the crystal bar 10 above a cutting line 6, the lifting structure 1 controls the crystal bar workpiece to lift so as to drive the crystal bar 10 to move towards or away from the cutting line 6, the cutting line 6 generally adopts a steel wire, the steel wire is wound on two wire guide wheels 5 which are oppositely arranged, and the wire guide wheels 5 rotate at a high speed so as to drive the cutting line 6 to move so as to cut the crystal bar 10.
The wire cutting device also comprises a mortar nozzle used for spraying mortar between the crystal bar 10 and the cutting wire 6, the mortar mainly comprises silicon carbide and cooling liquid, the silicon carbide is used for cutting the crystal bar, the cooling liquid has a cooling function and has functions of carrying the silicon carbide and cleaning, the cutting wire 6 carries the mortar to enter the crystal bar, in the actual cutting process, if the crystal bar is directly cut, the flatness and the warping degree of the surface of the silicon wafer produced in the initial cutting stage (within the depth range of 100 plus 150mm along the moving direction of the crystal bar on the crystal bar) are poor, which is mainly because the initial mortar is unevenly distributed and generates heat aggregation during cutting, so that the crystal bar 10 generates thermal expansion, in the embodiment, the arrangement of the pre-contact plate 2 enables the crystal bar 10 to be in the initial cutting stage, the pre-contact plate 2 is firstly contacted with the cutting wire 6, so as to avoid the occurrence of the heat aggregation phenomenon in the initial cutting stage of the crystal bar 10, thereby preventing thermal expansion of the initial portion of the ingot 10.
In this embodiment, the material of the pre-contact plate is polysilicon.
The physical property and the thermal deformation property of the polycrystalline silicon are similar to those of silicon, the polycrystalline silicon is cut firstly in the cutting process, and the jitter of the cutting line 6 and the thermal deformation of a crystal bar cannot be suddenly changed in the conversion process from the polycrystalline silicon to the monocrystalline silicon, so that the produced silicon wafer has better flatness.
In the embodiment, the pre-contact plate 2 comprises a first surface 21 for contacting with the cutting initial surface of the crystal bar 10, and the shape of the first surface 21 is consistent with the shape of the cutting initial surface of the crystal bar 10.
In the present embodiment, the pre-contact plate 2 includes a second surface 22 opposite to the first surface 21, and the second surface 22 is a planar structure.
The arrangement of the planar structure can better stabilize the jitter of the cutting line 6.
In the present embodiment, for example, the first thickness of the pre-contact plate 2 perpendicular to the extending direction thereof is greater than or equal to 100mm, and the second thickness is 10mm to 15 mm.
Referring to fig. 1 and 2, the first surface 21 of the pre-contact plate 2 is a curved structure, the curved structure has a central portion and edge portions symmetrically disposed at two opposite sides of the central portion in a direction perpendicular to an extending direction of the curved structure, a thickness L of the edge portions is the first thickness, and a thickness h of the central portion is the second thickness.
In one embodiment of this embodiment, the thickness L of the edge portion is 100mm to 150 mm.
The crystal bar is of a cylindrical structure, the peripheral surface of the crystal bar is an arc surface, the crystal bar descends every time, the contact surface of the crystal bar and the cutting line is enabled to change, the shaking condition of the cutting line changes every moment and is unstable, the scheme is adopted, the contact surface of the crystal bar and the cutting line is enabled to be unchanged along with the feeding of the crystal bar at the initial cutting stage, and the heat distribution and the steel wire shaking are stabilized before the cutting line 6 contacts with the silicon wafer.
In the present embodiment, the length of the pre-contact plate 2 in the extending direction is not less than the length of the ingot 10.
In the embodiment, for example, a resin plate 3 is disposed on a surface of the crystal bar 10 opposite to the cutting initiation surface, the resin plate 3 is fixed on a fixing plate 4, and the fixing plate 4 is connected with the lifting structure 1.
In this embodiment, the fixing plate (workpiece plate) 4 is made of metal steel, but not limited thereto.
The invention relates to a linear cutting method, which is applied to the linear cutting device and comprises the following steps:
fixing a pre-contact plate on the initial cutting surface of the crystal bar;
when the wire guide wheel drives the cutting line to rotate, the crystal bar provided with the pre-contact plate moves towards the direction close to the cutting line under the control of the lifting structure, so that the crystal bar is cut into silicon wafers.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (7)
1. A wire cutting device is used for cutting a crystal bar and comprises two wire guide wheels which are oppositely arranged, a plurality of cutting lines which are wound between the two wire guide wheels and used for fixing a crystal bar workpiece of the crystal bar, and a lifting structure, wherein the lifting structure is used for controlling the crystal bar workpiece to descend so that the crystal bar is contacted with the cutting lines or controlling the crystal bar workpiece to ascend so that the crystal bar is separated from the cutting lines.
2. The wire cutting device of claim 1, wherein the pre-contact plate is made of polysilicon.
3. The wire slicing apparatus as claimed in claim 2, wherein the pre-contact plate comprises a first face for contacting with the slicing start face of the ingot, the first face having a shape conforming to a shape of the slicing start face of the ingot.
4. The wire cutting apparatus of claim 3 wherein the pre-contact plate includes a second face disposed opposite the first face, the second face being a planar structure.
5. The wire cutting device of claim 3, wherein the pre-contact plate has a first thickness perpendicular to its extension greater than or equal to 100mm and a second thickness of 10mm to 15mm, and the pre-contact plate has a central portion and edge portions on opposite sides of the central portion in the direction perpendicular to its extension, the edge portions having the first thickness and the central portion having the second thickness.
6. The wire cutting apparatus according to claim 3, wherein the length of the pre-contact plate in the extending direction thereof is not less than the length of the ingot.
7. A wire cutting method applied to the wire cutting device according to any one of claims 1 to 6, comprising:
fixing a pre-contact plate on the initial cutting surface of the crystal bar;
when the wire guide wheel drives the cutting line to rotate, the crystal bar provided with the pre-contact plate moves towards the direction close to the cutting line under the control of the lifting structure, so that the crystal bar is cut into silicon wafers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110119045.0A CN112917720A (en) | 2021-01-28 | 2021-01-28 | Wire cutting device and wire cutting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110119045.0A CN112917720A (en) | 2021-01-28 | 2021-01-28 | Wire cutting device and wire cutting method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112917720A true CN112917720A (en) | 2021-06-08 |
Family
ID=76168001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110119045.0A Pending CN112917720A (en) | 2021-01-28 | 2021-01-28 | Wire cutting device and wire cutting method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112917720A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116872365A (en) * | 2023-08-25 | 2023-10-13 | 宁夏中欣晶圆半导体科技有限公司 | Cutting method for efficiently cutting carbon plate |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5565097A (en) * | 1978-11-10 | 1980-05-16 | Tokyo Shibaura Electric Co | Cutting method by means of wire |
| JP2006001034A (en) * | 2004-06-15 | 2006-01-05 | Sumitomo Electric Ind Ltd | Single crystal ingot cutting method |
| JP2011104746A (en) * | 2009-11-20 | 2011-06-02 | Komatsu Ntc Ltd | Thin-wafer machining method |
| CN110370479A (en) * | 2019-07-15 | 2019-10-25 | 上海新昇半导体科技有限公司 | A kind of crystal bar cutter device and method |
-
2021
- 2021-01-28 CN CN202110119045.0A patent/CN112917720A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5565097A (en) * | 1978-11-10 | 1980-05-16 | Tokyo Shibaura Electric Co | Cutting method by means of wire |
| JP2006001034A (en) * | 2004-06-15 | 2006-01-05 | Sumitomo Electric Ind Ltd | Single crystal ingot cutting method |
| JP2011104746A (en) * | 2009-11-20 | 2011-06-02 | Komatsu Ntc Ltd | Thin-wafer machining method |
| CN110370479A (en) * | 2019-07-15 | 2019-10-25 | 上海新昇半导体科技有限公司 | A kind of crystal bar cutter device and method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116872365A (en) * | 2023-08-25 | 2023-10-13 | 宁夏中欣晶圆半导体科技有限公司 | Cutting method for efficiently cutting carbon plate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100612166B1 (en) | Electronic assembly including a die having an integrated circuit and a layer of diamond and methods of producing the same | |
| KR100607188B1 (en) | Wire saw and cutting method | |
| JP4777880B2 (en) | Silicon casting apparatus and silicon ingot manufacturing method | |
| JP4076130B2 (en) | How to detach a substrate from a workpiece | |
| US3031403A (en) | Process for producing crystals and the products thereof | |
| US6532642B1 (en) | Method of making a silicon carbide rail for use in a semiconductor wafer carrier | |
| US8871613B2 (en) | Semiconductor die singulation method | |
| EP2850228B1 (en) | Improved production of mono-crystalline silicon | |
| KR101408552B1 (en) | Method and device for producing thin silicon rods | |
| CN112917720A (en) | Wire cutting device and wire cutting method | |
| TWI722276B (en) | A slicing method and a slicing apparatus for an ingot | |
| US5298109A (en) | Process for the production of metal wafers and the use of silicon wafers | |
| KR20090088374A (en) | Vertical heat treatment boat and semiconductor wafer heat treatment method using the same | |
| KR101460918B1 (en) | Polycrystalline silicon ingot manufacturing apparatus, polycrystalline silicon ingot manufacturing method, and polycrystalline silicon ingot | |
| CN110039673A (en) | A kind of cutter device and method | |
| JP2002293526A (en) | Production apparatus of polycrystalline silicon | |
| JP2012101310A (en) | Wire saw device, and method for manufacturing wafer using the same | |
| JP4011335B2 (en) | Method for producing solid phase sheet | |
| CN109531844A (en) | Multi-wire cutting device, multi-line cutting method and application thereof | |
| US3910801A (en) | High velocity thermal migration method of making deep diodes | |
| KR101112743B1 (en) | Wire Saw For Cutting Ingot | |
| US6367467B1 (en) | Holding unit for semiconductor wafer sawing | |
| TWI581903B (en) | Method of manufacturing substrate | |
| JP4043498B2 (en) | Method for producing solid phase sheet | |
| TWI815587B (en) | Multi-wire cutting device and multi-wire cutting method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20220701 Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: Room 1323, block a, city gate, No.1 Jinye Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| CB02 | Change of applicant information |
Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210608 |
|
| RJ01 | Rejection of invention patent application after publication |