CN112909526A - Dual-frequency point ultrahigh-frequency bandwidth tagged antenna - Google Patents
Dual-frequency point ultrahigh-frequency bandwidth tagged antenna Download PDFInfo
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- CN112909526A CN112909526A CN202110093526.9A CN202110093526A CN112909526A CN 112909526 A CN112909526 A CN 112909526A CN 202110093526 A CN202110093526 A CN 202110093526A CN 112909526 A CN112909526 A CN 112909526A
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- 238000010586 diagram Methods 0.000 description 8
- 238000004088 simulation Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 238000007726 management method Methods 0.000 description 4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2208—Supports; Mounting means by structural association with other equipment or articles associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems
- H01Q1/2225—Supports; Mounting means by structural association with other equipment or articles associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems used in active tags, i.e. provided with its own power source or in passive tags, i.e. deriving power from RF signal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
- H01Q5/10—Resonant antennas
Abstract
The invention discloses a double-frequency point ultrahigh-frequency band-label antenna, which comprises a medium substrate, a resonance structure, an impedance matching structure and a metal pad, wherein the resonance structure comprises a first resonance unit and a second resonance unit, the first resonance unit comprises a first rectangular metal microstrip line, a second rectangular metal microstrip line, a third rectangular metal microstrip line, a fourth rectangular metal microstrip line and a fifth rectangular metal microstrip line which are attached to the upper surface of the medium substrate, the second resonance unit comprises a sixth rectangular metal microstrip line, a seventh rectangular metal microstrip line and an eighth rectangular metal microstrip line which are attached to the upper surface of the medium substrate, the impedance matching structure is positioned at the front side of the second rectangular metal microstrip line, the impedance matching structure comprises a ninth rectangular metal microstrip line, a tenth rectangular metal microstrip line, an eleventh rectangular metal microstrip line and a twelfth rectangular metal microstrip line which are attached to the upper surface of the dielectric substrate; the method has the advantage of wide working frequency range coverage.
Description
Technical Field
The invention relates to a tag antenna, in particular to a dual-frequency point ultrahigh-frequency bandwidth tagged antenna.
Background
The Radio Frequency Identification (RFID) technology is a non-contact automatic Identification technology, which relies on Radio Frequency signals to automatically identify target objects and acquire corresponding data, and the Identification work is automatic, does not need manual intervention, and can work in various different environments. The radio frequency identification technology has been widely applied to a plurality of industries and fields due to the characteristics of wide applicability, high read-write speed and the like.
The radio frequency identification system realized by the radio frequency identification technology mainly comprises a reader, tags and a data exchange and management system, wherein the reader is equipment for reading tag information, the tags mainly comprise tag antennas and tag chips, and each tag has a unique EPC code; the data exchange and management system mainly stores and manages data information and controls reading and writing of the labels. When the radio frequency identification system is in operation, the reader transmits radio frequency energy within a certain range to form an electromagnetic field, and then the tags within the range are activated to communicate with the data exchange and management system and transmit the data stored therein to the data exchange and management system. According to the difference of the working frequency, the rfid system can be divided into a low frequency (the working frequency is 125-134.2KHz in the low frequency band), a high frequency (the working frequency is 13.56MHz in the high frequency band), an ultra high frequency (the working frequency is 860-960MHz in the ultra high frequency band) and a microwave (the working frequency is 2.45GHz or 5.8GHz in the microwave band) rfid system. Different countries will set corresponding working frequency ranges within the uhf band based on their current rfid technology, for example, in europe, the working frequency range of the rfid system within the uhf band is 862-870MHz, and in china, the working frequency range of the rfid system within the uhf band is 902-928 MHz.
The tag antenna is a communication sensing antenna which utilizes electromagnetic waves for energy transfer. In the design of the whole radio frequency identification system, the tag antenna is the most core part of the design, and the emitted electromagnetic wave is a bridge for information communication between the reader and the tag. Meanwhile, the tag antenna can ensure that the maximum energy is transmitted into or out of the tag chip by achieving good impedance matching with the tag chip.
Most of the existing tag antennas are designed based on the working frequency band of one or two countries in the ultrahigh frequency band, and the coverage range of the working frequency band of the tag antenna is narrow, so that the application field of the radio frequency identification system is limited. For example, when the rfid system is used in temperature sensing, logistics, and supply chain management, since different articles are respectively attached with different tags, the number of tags is large and the distance between the tags is very short, and at this time, tag antennas in the tags are located in near-field radiation areas of each other, which inevitably causes interference with each other, so that the frequency point of the tag antenna shifts left and right to deviate from the designed operating frequency band, and finally many tags cannot be identified by the reader.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a dual-frequency point ultra-high-frequency bandwidth tagged antenna with a wide working frequency range coverage.
The technical scheme adopted by the invention for solving the technical problems is as follows: a dual-frequency point ultra-high-frequency band-label antenna comprises a dielectric substrate, a resonance structure, an impedance matching structure and a metal pad, wherein the resonance structure comprises a first resonance unit and a second resonance unit, the first resonance unit comprises a first rectangular metal microstrip line, a second rectangular metal microstrip line, a third rectangular metal microstrip line, a fourth rectangular metal microstrip line and a fifth rectangular metal microstrip line which are attached to the upper surface of the dielectric substrate, the first rectangular metal microstrip line is parallel to the third rectangular metal microstrip line, the fourth rectangular metal microstrip line and the fifth rectangular metal microstrip line are both parallel to the second rectangular metal microstrip line, the first rectangular metal microstrip line is positioned on the left side of the third rectangular metal microstrip line, the second rectangular metal microstrip line is positioned between the first rectangular metal microstrip line and the third rectangular metal microstrip line, the right end face of the first rectangular metal microstrip line is in fit connection with the left end face of the second rectangular metal microstrip line, the left end face of the third rectangular metal microstrip line is in fit connection with the right end face of the second rectangular metal microstrip line, the rear end face of the first rectangular metal microstrip line, the rear end face of the second rectangular metal microstrip line and the rear end face of the third rectangular metal microstrip line are located on the same plane, the fourth rectangular metal microstrip line and the fifth rectangular metal microstrip line are located between the first rectangular metal microstrip line and the third rectangular metal microstrip line, the fourth rectangular metal microstrip line is located on the right side of the fifth rectangular metal microstrip line, the right end face of the fourth rectangular metal microstrip line is in fit connection with the left end face of the third rectangular metal microstrip line, and the left end face of the fifth rectangular metal microstrip line and the right end face of the first rectangular metal microstrip line are located on the right side of the fifth rectangular metal microstrip line The front end face of the first rectangular metal microstrip line, the front end face of the second rectangular metal microstrip line, the front end face of the fourth rectangular metal microstrip line and the front end face of the fifth rectangular metal microstrip line are positioned on the same plane, the rear end face of the fourth rectangular metal microstrip line and the rear end face of the fifth rectangular metal microstrip line are positioned on the same plane, a distance is reserved between the left end face of the fourth rectangular metal microstrip line and the right end face of the fifth rectangular metal microstrip line, a first opening is formed between the left end face of the fourth rectangular metal microstrip line and the right end face of the fifth rectangular metal microstrip line, the length of the first rectangular metal microstrip line in the left-right direction, the length of the second rectangular metal microstrip line in the front-back direction and the length of the third rectangular metal microstrip line in the left-right direction, The length of the fourth rectangular metal microstrip line in the front-back direction is equal to that of the fifth rectangular metal microstrip line in the front-back direction; the length of the fourth rectangular metal microstrip line in the left-right direction is not equal to the length of the fifth rectangular metal microstrip line in the left-right direction; the second resonance unit comprises a sixth rectangular metal microstrip line, a seventh rectangular metal microstrip line and an eighth rectangular metal microstrip line which are attached to the upper surface of the dielectric substrate, the sixth rectangular metal microstrip line is positioned on the right side of the first rectangular metal microstrip line and is positioned between the fifth rectangular metal microstrip line and the second rectangular metal microstrip line, the sixth rectangular metal microstrip line is parallel to the first rectangular metal microstrip line, the rear end face of the sixth rectangular metal microstrip line is in fit connection with the front end face of the second rectangular metal microstrip line, a distance is reserved between the front end face of the sixth rectangular metal microstrip line and the rear end face of the fifth rectangular metal microstrip line, the seventh rectangular metal microstrip line is positioned on the right side of the sixth rectangular metal microstrip line and is positioned between the fifth rectangular metal microstrip line and the second rectangular metal microstrip line, the seventh rectangular metal microstrip line is parallel to the sixth rectangular metal microstrip line, a distance is arranged between the rear end face of the seventh rectangular metal microstrip line and the front end face of the second rectangular metal microstrip line, the eighth rectangular metal microstrip line is positioned between the sixth rectangular metal microstrip line and the seventh rectangular metal microstrip line, the left end face of the eighth rectangular metal microstrip line is in fit connection with the right end face of the sixth rectangular metal microstrip line, the right end face of the eighth rectangular metal microstrip line is in fit connection with the left end face of the seventh rectangular metal microstrip line, the front end face of the sixth rectangular metal microstrip line, the front end face of the seventh rectangular metal microstrip line and the front end face of the eighth rectangular metal microstrip line are positioned on the same plane, and the length of the sixth rectangular metal microstrip line along the left-right direction is positioned on the same plane, The length of the seventh rectangular metal microstrip line in the left-right direction is equal to the length of the eighth rectangular metal microstrip line in the front-back direction, and the length of the sixth rectangular metal microstrip line in the left-right direction is smaller than the length of the first rectangular metal microstrip line in the left-right direction; the impedance matching structure is located on the front side of the second rectangular metal microstrip line and on the right side of the second resonance unit, the impedance matching structure comprises a ninth rectangular metal microstrip line, a tenth rectangular metal microstrip line, an eleventh rectangular metal microstrip line and a twelfth rectangular metal microstrip line which are attached to the upper surface of the dielectric substrate, the ninth rectangular metal microstrip line and the tenth rectangular metal microstrip line are both parallel to the first rectangular metal microstrip line, the ninth rectangular metal microstrip line is located on the left side of the tenth rectangular metal microstrip line, the rear end surface of the ninth rectangular metal microstrip line and the rear end surface of the tenth rectangular metal microstrip line are respectively attached to the front end surface of the second rectangular metal microstrip line, the plane where the left end surface of the ninth rectangular metal microstrip line is located on the right side of the plane where the right end surface of the seventh rectangular metal microstrip line is located, a distance is arranged between the first rectangular metal microstrip line and the second rectangular metal microstrip line, a distance is arranged between the plane of the front end face of the ninth rectangular metal microstrip line and the plane of the rear end face of the seventh rectangular metal microstrip line, the eleventh rectangular metal microstrip line and the twelfth rectangular metal microstrip line are positioned between the ninth rectangular metal microstrip line and the tenth rectangular metal microstrip line, the eleventh rectangular metal microstrip line is positioned on the right side of the twelfth rectangular metal microstrip line, the right end face of the eleventh rectangular metal microstrip line is in fit connection with the left end face of the tenth rectangular metal microstrip line, the left end face of the twelfth rectangular metal microstrip line is in fit connection with the right end face of the ninth rectangular metal microstrip line, the front end face of the tenth rectangular metal microstrip line, a distance is arranged between the planes of the front end face and the rear end face of the seventh rectangular metal microstrip line, a distance is, The front end surface of the eleventh rectangular metal microstrip line and the front end surface of the twelfth rectangular metal microstrip line are located on the same plane, the rear end surface of the eleventh rectangular metal microstrip line and the rear end surface of the twelfth rectangular metal microstrip line are located on the same plane, the length of the eleventh rectangular metal microstrip line in the left-right direction is not equal to the length of the twelfth rectangular metal microstrip line in the left-right direction, a distance is reserved between the left end surface of the eleventh rectangular metal microstrip line and the right end surface of the twelfth rectangular metal microstrip line, a second opening is formed between the left end surface of the eleventh rectangular metal microstrip line and the right end surface of the twelfth rectangular metal microstrip line, the length of the ninth rectangular metal microstrip line in the left-right direction, the length of the tenth rectangular metal microstrip line in the left-right direction, a second opening is formed between the left end surface of the eleventh rectangular metal microstrip line and the right end, The length of the eleventh rectangular metal microstrip line in the front-back direction is equal to that of the twelfth rectangular metal microstrip line in the front-back direction, the length of the ninth rectangular metal microstrip line in the left-right direction is greater than that of the sixth rectangular metal microstrip line in the left-right direction and smaller than that of the first rectangular metal microstrip line in the left-right direction, and the distance between the left end face of the ninth rectangular metal microstrip line and the right end face of the first rectangular metal microstrip line is not equal to the distance between the right end face of the tenth rectangular metal microstrip line and the left end face of the third rectangular metal microstrip line. The metal pad is attached to the upper surface of the dielectric substrate, is located on the front side of the impedance matching structure, and is opposite to a second opening formed between the right end face of the eleventh rectangular metal microstrip line and the left end face of the twelfth rectangular metal microstrip line.
The dielectric substrate is of a cuboid structure, the thickness of the dielectric substrate is 0.6mm, the length of the dielectric substrate in the left-right direction is 104mm, the width of the dielectric substrate in the front-back direction is 72.5m, the plane of the left end face of the first rectangular metal microstrip line is parallel to the plane of the left end face of the dielectric substrate, the distance between the left end face and the left end face of the dielectric substrate is 1mm, the plane of the rear end face of the second rectangular metal microstrip line is parallel to the plane of the rear end face of the dielectric substrate, the distance between the left end face and the right end face of the dielectric substrate is 1mm, the plane of the right end face of the third rectangular metal microstrip line is parallel to the plane of the right end face of the dielectric substrate, the distance between the left end face and the right end face of the fourth rectangular metal microstrip line is 1mm, the length of the first rectangular metal microstrip line in the left-right direction is 5.5mm, the length of the second rectangular metal microstrip line in the front-back direction is 70.5mm, the length of the second rectangular metal microstrip line in the left-right direction is 91mm, the length of the third rectangular metal microstrip line in the front-back direction is 5.5mm, the length of the fourth rectangular metal microstrip line in the left-right direction is 70.5mm, the length of the fourth rectangular metal microstrip line in the left-right direction is 44mm, the length of the fourth rectangular metal microstrip line in the front-back direction is 5.5mm, the length of the fifth rectangular metal microstrip line in the left-right direction is 45mm, the length of the fifth rectangular metal microstrip line in the front-back direction is 5.5mm, the length of the sixth rectangular metal microstrip line in the left-right direction is 3.1mm, the length of the seventh rectangular metal microstrip line in the left-right direction is 3.1mm, the length of the eighth rectangular metal microstrip line in the left-right direction is 2.9mm, and the length of the eighth rectangular metal microstrip line in the front-back direction is 3.1mm, the ninth rectangular metal microstrip line has a length of 4.1mm in the left-right direction and a length of 11mm in the front-back direction, the tenth rectangular metal microstrip line has a length of 4.1mm in the left-right direction and a length of 11mm in the front-back direction, the eleventh rectangular metal microstrip line has a length of 9mm in the left-right direction and a length of 4.1mm in the front-back direction, the twelfth rectangular metal microstrip line has a length of 9.1mm in the left-right direction and a length of 4.1mm in the front-back direction; the distance between the right end face of the first rectangular metal microstrip line and the left end face of the sixth rectangular metal microstrip line is 20.9mm, the distance between the right end face of the sixth rectangular metal microstrip line and the left end face of the ninth rectangular metal microstrip line is 5.7mm, the distance between the right end face of the ninth rectangular metal microstrip line and the left end face of the tenth rectangular metal microstrip line is 18.6mm, and the distance between the right end face of the tenth rectangular metal microstrip line and the left end face of the third rectangular metal microstrip line is 34.5 mm. In the structure, the left-right direction length and the front-back direction length of a second rectangular metal microstrip line, a third rectangular metal microstrip line and a fourth rectangular metal microstrip line mainly affect the high-frequency resonance point of the tag antenna, the left-right direction length and the front-back direction length of a first rectangular metal microstrip line, a second rectangular metal microstrip line, a fifth rectangular metal microstrip line, a sixth rectangular metal microstrip line mainly affect the low-frequency resonance point of the tag antenna, in the impedance matching structure, a ninth rectangular metal microstrip line, a tenth rectangular metal microstrip line, an eleventh rectangular metal microstrip line and a twelfth rectangular metal microstrip line mainly affect the impedance matching between the tag antenna and the tag chip, and an eighth rectangular metal microstrip line and a seventh rectangular metal microstrip line also have certain functions of adjusting the impedance matching between the tag antenna and the tag chip according to the actual processing and welding principles, the most common size of the metal bonding pad is adopted, the sizes of all parts of the tag antenna are strictly designed, the matching among the parts presents the optimal state, finally the tag antenna reaches the performance index of a broadband, the tag antenna is almost perfectly matched with a tag chip, and an experimental simulation result proves that when the return loss value of the tag antenna is less than-10 dB, the relative bandwidth of the tag antenna realizes the broadband range of 110MHz and has certain anti-interference capability.
Compared with the prior art, the invention has the advantages that the double-frequency-point ultrahigh-frequency-band tag antenna is formed by the dielectric substrate, the resonance structure, the impedance matching structure and the metal pad, the resonance structure comprises a first resonance unit and a second resonance unit, the first resonance unit is formed by a first rectangular metal microstrip line, a second rectangular metal microstrip line, a third rectangular metal microstrip line, a fourth rectangular metal microstrip line and a fifth rectangular metal microstrip line, the first resonance unit is formed by the cooperation of the second rectangular metal microstrip line, the third rectangular metal microstrip line and the fourth rectangular metal microstrip line in the first resonance unit, the second resonance unit is formed by a sixth rectangular metal microstrip line, a seventh rectangular metal microstrip line and an eighth rectangular metal microstrip line, the introduction of the second resonance unit enables the tag antenna to have a second resonance frequency point, so that the tag antenna has a wide working frequency range, in the second resonance unit, the seventh rectangular metal microstrip line and the eighth rectangular metal microstrip line adjust impedance matching of the tag antenna, the seventh rectangular metal microstrip line is located on the right side of the eighth rectangular metal microstrip line, and a vertical relationship exists between the seventh rectangular metal microstrip line and the eighth rectangular metal microstrip line, and simultaneously the size of the tag antenna can be reduced, impedance values of the tag antenna and the tag chip are in a conjugate relationship, because output impedance of the tag chip has a large reactance component, in order to achieve maximum power transmission and obtain a large reading distance, the tag antenna is required to have a large reactance component, in the impedance matching structure, lengths (sizes along the front-back direction) of the ninth rectangular metal microstrip line and the tenth rectangular metal microstrip line are used for adjusting an impedance real part of the tag antenna, lengths (sizes along the left-right direction) of the eleventh rectangular metal microstrip line and the twelfth rectangular metal microstrip line, and widths (sizes along the left-right direction) of the ninth rectangular metal microstrip line and the tenth rectangular metal microstrip line The size in the right direction) and the widths (the size along the front-back direction) of the eleventh rectangular metal microstrip line and the twelfth rectangular metal microstrip line are mainly used for adjusting the impedance imaginary part of the tag antenna, the reason that impedance is not matched can be judged according to a simulation result by adopting the impedance matching structure, the impedance real part or the imaginary part value of the tag antenna can be adjusted more accurately and conveniently, the design optimization of the tag antenna product is facilitated, and an experimental simulation result shows that when the return loss value of the tag antenna is smaller than-10 dB, the broadband range of 110MHz is realized relative to the bandwidth, the coverage range of a working frequency band is wide, the resonance structure and the impedance matching structure are respectively realized by adopting a simple structure, the cost is low, and the subsequent processing is facilitated.
Drawings
Fig. 1 is a top view of a dual-band ultra-high bandwidth tagged antenna of the present invention;
FIG. 2 is a diagram of a simulation S11 of the dual-band ultra-high-bandwidth tagged antenna of the present invention;
FIG. 3 is an impedance matching diagram of the dual-band ultra-high-bandwidth tag antenna at two resonance points of 850MHz and 920MHz according to the present invention;
FIG. 4 is a two-dimensional gain pattern of the dual-band ultra-high bandwidth tagged antenna of the present invention at a frequency of 850 MHz;
FIG. 5 is a two-dimensional gain pattern of the dual-band ultra-high bandwidth tagged antenna of the present invention at a frequency point of 920 MHz;
fig. 6 is a radiation efficiency diagram of the dual-band ultra-high-bandwidth tag antenna of the present invention at two resonance points of 850MHz and 920 MHz.
Detailed Description
The invention is described in further detail below with reference to the accompanying examples.
Example (b): as shown in fig. 1, a dual-frequency point ultra-high-bandwidth tag antenna comprises a dielectric substrate 1, a resonant structure, an impedance matching structure and a metal pad 2, wherein the resonant structure comprises a first resonant unit and a second resonant unit, the first resonant unit and the second resonant unit are used for generating two high and low resonant frequency points, the first resonant unit comprises a first rectangular metal microstrip line 3, a second rectangular metal microstrip line 4, a third rectangular metal microstrip line 5, a fourth rectangular metal microstrip line 6 and a fifth rectangular metal microstrip line 7, the first rectangular metal microstrip line 3 is parallel to the third rectangular metal microstrip line 5, the fourth rectangular metal microstrip line 6 and the fifth rectangular metal microstrip line 7 are both parallel to the second rectangular metal microstrip line 4, the first rectangular metal microstrip line 3 is located on the left side of the third rectangular metal microstrip line, the second rectangular metal microstrip line 4 is located between the first rectangular metal microstrip line 3 and the third rectangular metal microstrip line 5, the right end face of the first rectangular metal microstrip line 3 is in fit connection with the left end face of the second rectangular metal microstrip line 4, the left end face of the third rectangular metal microstrip line 5 is in fit connection with the right end face of the second rectangular metal microstrip line 4, the rear end face of the first rectangular metal microstrip line 3, the rear end face of the second rectangular metal microstrip line 4 and the rear end face of the third rectangular metal microstrip line 5 are located on the same plane, a fourth rectangular metal microstrip line 6 and a fifth rectangular metal microstrip line 7 are located between the first rectangular metal microstrip line 3 and the third rectangular metal microstrip line 5, the fourth rectangular metal microstrip line 6 is located on the right side of the fifth rectangular metal microstrip line 7, the right end face of the fourth rectangular metal microstrip line 6 is in fit connection with the left end face of the third rectangular metal microstrip line 5, the left end face of the fifth rectangular metal microstrip line 7 is in fit connection with the right end face of the first rectangular metal microstrip line, the front end surface of the first rectangular metal microstrip line 3, the front end surface of the second rectangular metal microstrip line 4, the front end surface of the fourth rectangular metal microstrip line 6 and the front end surface of the fifth rectangular metal microstrip line 7 are positioned on the same plane, the rear end face of the fourth rectangular metal microstrip line 6 and the rear end face of the fifth rectangular metal microstrip line 7 are located on the same plane, a distance is provided between the left end face of the fourth rectangular metal microstrip line 6 and the right end face of the fifth rectangular metal microstrip line 7, a first opening 8 is formed between the left end face of the fourth rectangular metal microstrip line 6 and the right end face of the fifth rectangular metal microstrip line 7, the length of the first rectangular metal microstrip line 3 in the left-right direction, the length of the second rectangular metal microstrip line 4 in the front-back direction, the length of the third rectangular metal microstrip line 5 in the left-right direction, the length of the fourth rectangular metal microstrip line 6 in the front-back direction and the length of the fifth rectangular metal microstrip line 7 in the front-back direction are all equal; the length of the fourth rectangular metal microstrip line 6 in the left-right direction is not equal to the length of the fifth rectangular metal microstrip line 7 in the left-right direction; the second resonance unit comprises a sixth rectangular metal microstrip line 9, a seventh rectangular metal microstrip line 10 and an eighth rectangular metal microstrip line 11 which are attached to the upper surface of the dielectric substrate 1, the sixth rectangular metal microstrip line 9 is positioned on the right side of the first rectangular metal microstrip line 3 and is positioned between the fifth rectangular metal microstrip line 7 and the second rectangular metal microstrip line 4, the sixth rectangular metal microstrip line 9 is parallel to the first rectangular metal microstrip line 3, the rear end face of the sixth rectangular metal microstrip line 9 is attached to the front end face of the second rectangular metal microstrip line 4, a distance is reserved between the front end face of the sixth rectangular metal microstrip line 9 and the rear end face of the fifth rectangular metal microstrip line 7, the seventh rectangular metal microstrip line 10 is positioned on the right side of the sixth rectangular metal microstrip line 9 and is positioned between the fifth rectangular metal microstrip line 7 and the second rectangular metal microstrip line 4, the seventh rectangular metal microstrip line 10 is parallel to the sixth rectangular metal microstrip line 9, a distance is provided between the rear end face of the seventh rectangular metal microstrip line 10 and the front end face of the second rectangular metal microstrip line 4, the eighth rectangular metal microstrip line 11 is located between the sixth rectangular metal microstrip line 9 and the seventh rectangular metal microstrip line 10, the left end face of the eighth rectangular metal microstrip line 11 is in fit connection with the right end face of the sixth rectangular metal microstrip line 9, the right end face of the eighth rectangular metal microstrip line 11 is in fit connection with the left end face of the seventh rectangular metal microstrip line 10, the front end face of the sixth rectangular metal microstrip line 9, the front end face of the seventh rectangular metal microstrip line 10 and the front end face of the eighth rectangular metal microstrip line 11 are located on the same plane, the lengths of the sixth rectangular metal microstrip line 9, the seventh rectangular metal microstrip line 10, the eighth rectangular metal microstrip line 11, the left and right directions are all equal, and the length of the sixth rectangular metal microstrip line 9 is smaller than the length of the first rectangular metal microstrip line 3, the left and right directions A length; the impedance matching structure is located on the front side of the second rectangular metal microstrip line 4 and on the right side of the second resonance unit, the impedance matching structure comprises a ninth rectangular metal microstrip line 12, a tenth rectangular metal microstrip line 13, an eleventh rectangular metal microstrip line 14 and a twelfth rectangular metal microstrip line 15 which are attached to the upper surface of the dielectric substrate 1, the ninth rectangular metal microstrip line 12 and the tenth rectangular metal microstrip line 13 are both parallel to the first rectangular metal microstrip line 3, the ninth rectangular metal microstrip line 12 is located on the left side of the tenth rectangular metal microstrip line 13, the rear end face of the ninth rectangular metal microstrip line 12 and the rear end face of the tenth rectangular metal microstrip line 13 are respectively attached to the front end face of the second rectangular metal microstrip line 4, the plane where the left end face of the ninth rectangular metal microstrip line 12 is located on the right side of the plane where the right end face of the seventh rectangular metal microstrip line 10 is located, and a distance is provided between the two, a distance is reserved between the plane of the front end face of the ninth rectangular metal microstrip line 12 and the plane of the rear end face of the seventh rectangular metal microstrip line 10, the eleventh rectangular metal microstrip line 14 and the twelfth rectangular metal microstrip line 15 are located between the ninth rectangular metal microstrip line 12 and the tenth rectangular metal microstrip line 13, the eleventh rectangular metal microstrip line 14 is located on the right side of the twelfth rectangular metal microstrip line 15, the right end face of the eleventh rectangular metal microstrip line 14 is attached to the left end face of the tenth rectangular metal microstrip line 13, the left end face of the twelfth rectangular metal microstrip line 15 is attached to the right end face of the ninth rectangular metal microstrip line 12, the front end face of the tenth rectangular metal microstrip line 13, the front end face of the eleventh rectangular metal microstrip line 14 and the front end face of the twelfth rectangular metal microstrip line 15 are located on the same plane, the rear end face of the eleventh rectangular metal microstrip line 14 and the rear end face of the twelfth rectangular metal microstrip line 15 are located on the same plane, the length of the eleventh rectangular metal microstrip line 14 in the left-right direction is not equal to the length of the twelfth rectangular metal microstrip line 15 in the left-right direction, a distance is provided between the left end face of the eleventh rectangular metal microstrip line 14 and the right end face of the twelfth rectangular metal microstrip line 15, a second opening 16 is formed between the left end face of the eleventh rectangular metal microstrip line 14 and the right end face of the twelfth rectangular metal microstrip line 15, the length of the ninth rectangular metal microstrip line 12 in the left-right direction, the length of the tenth rectangular metal microstrip line 13 in the left-right direction, the length of the eleventh rectangular metal microstrip line 14 in the front-back direction and the length of the twelfth rectangular metal microstrip line 15 in the front-back direction are both equal, and the length of the ninth rectangular metal microstrip line 12 in the left-right direction is greater than the length of the The length of the metal microstrip line 3 along the left-right direction is not equal to the distance between the right end face of the tenth rectangular metal microstrip line 13 and the left end face of the third rectangular metal microstrip line 5, and the distance between the left end face of the ninth rectangular metal microstrip line 12 and the right end face of the first rectangular metal microstrip line 3 is not equal to the distance between the right end face of the tenth rectangular metal microstrip line 3 and the left end face of the third rectangular metal microstrip. The metal pad 2 is attached to the upper surface of the dielectric substrate 1, and the metal pad 2 is located at the front side of the impedance matching structure and is opposite to a second opening 16 formed between the right end face of the eleventh rectangular metal microstrip line 14 and the left end face of the twelfth rectangular metal microstrip line 15.
In this embodiment, the dielectric substrate 1 is a rectangular parallelepiped structure, the thickness of the dielectric substrate 1 is 0.6mm, a Teflon material with a dielectric constant of 2.17 and a loss tangent of 0.001 is used, the length in the left-right direction is 104mm, the width in the front-back direction is 72.5m, the plane of the left end face of the first rectangular metal microstrip line 3 is parallel to the plane of the left end face of the dielectric substrate 1 and the distance between the left end face and the left end face is 1mm, the plane of the back end face of the second rectangular metal microstrip line 4 is parallel to the plane of the back end face of the dielectric substrate 1 and the distance between the two is 1mm, the plane of the right end face of the third rectangular metal microstrip line 5 is parallel to the plane of the right end face of the dielectric substrate 1 and the distance between the two is 1mm, the plane of the front end face of the fourth rectangular metal microstrip line 6 is parallel to the plane of the front end face of the dielectric substrate 1 and the distance between the two is 1, the length of the first rectangular metal microstrip line 3 in the left-right direction is 5.5mm, the length of the second rectangular metal microstrip line 4 in the left-right direction is 70.5mm, the length of the third rectangular metal microstrip line 5 in the front-rear direction is 91mm, the length of the fourth rectangular metal microstrip line 6 in the left-right direction is 5.5mm, the length of the third rectangular metal microstrip line 5 in the left-right direction is 70.5mm, the length of the fourth rectangular metal microstrip line 6 in the left-right direction is 44mm, the length of the fourth rectangular metal microstrip line in the front-rear direction is 5.5mm, the length of the fifth rectangular metal microstrip line 7 in the left-right direction is 45mm, the length of the sixth rectangular metal microstrip line 9 in the front-rear direction is 5.5mm, the length of the sixth rectangular metal microstrip line 9 in the left-right direction is 3.1mm, the length of the front-rear direction is 42.27mm, the length of the seventh rectangular metal microstrip line 10 in the left-right direction is 3.1mm, the length of the front-rear direction is, the length in the front-rear direction is 3.1mm, the length in the left-right direction of the ninth rectangular metal microstrip line 12 is 4.1mm, the length in the front-rear direction is 11mm, the length in the left-right direction of the tenth rectangular metal microstrip line 13 is 4.1mm, the length in the front-rear direction is 11mm, the length in the left-right direction of the eleventh rectangular metal microstrip line 14 is 9mm, the length in the front-rear direction is 4.1mm, the length in the left-right direction of the twelfth rectangular metal microstrip line 15 is 9.1mm, and the length in the front-rear direction is 4.1 mm; the distance between the right end face of the first rectangular metal microstrip line 3 and the left end face of the sixth rectangular metal microstrip line 9 is 20.9mm, the distance between the right end face of the sixth rectangular metal microstrip line 9 and the left end face of the ninth rectangular metal microstrip line 12 is 5.7mm, the distance between the right end face of the ninth rectangular metal microstrip line 12 and the left end face of the tenth rectangular metal microstrip line 13 is 18.6mm, and the distance between the right end face of the tenth rectangular metal microstrip line 13 and the left end face of the third rectangular metal microstrip line 5 is 34.5 mm.
The tag chip is mounted at the second opening 16, the tag chip having three pins: an OPEN pin, an RF1 pin and an RF2 pin, wherein the OPEN pin is welded on the metal pad 2, and the RF1 pin and the RF2 pin are respectively welded on the eleventh rectangular metal microstrip line 14 and the twelfth rectangular metal microstrip line 15.
The model structure of the dual-frequency point ultra-high-bandwidth tagged antenna is constructed, and the performance simulation of the dual-frequency point ultra-high-bandwidth tagged antenna is carried out by adopting the HFSS (high frequency simulation software). The simulation S11 diagram of the dual-frequency-point ultrahigh-bandwidth tagged antenna of the invention is shown in fig. 2, and it can be seen from analyzing fig. 2 that two central working frequency points of the dual-frequency-point ultrahigh-bandwidth tagged antenna of the invention are 850MHz and 920MHz, respectively, the 10dB bandwidth is 110MHz, the performance of the broadband is well realized, and the anti-interference capability is high, the return loss S11 of the tag antenna obtained by simulation reaches-28.5958 dB at 850MHz, and reaches-28.1809 dB at 920MHz, because the smaller the value of the return loss S11 in the antenna performance parameters, the less the electromagnetic waves emitted by the antenna are reflected, so that it can be seen that the electromagnetic waves emitted by the dual-frequency-point ultrahigh-bandwidth tagged antenna of the invention are almost all radiated, and the reflected electromagnetic waves are few.
The impedance matching graph of the dual-frequency point ultra-high bandwidth tagged antenna at the two resonance frequency points of 850MHz and 920MHz is shown in FIG. 3, and as can be known from the analysis of FIG. 3, when the resonance frequency point is 850MHz, the input impedance value of the dual-frequency point ultra-high bandwidth tagged antenna is 13.95+ j144.08 Ω; when the resonant frequency point is 920MHz, the input impedance value of the dual-frequency point ultrahigh-frequency bandwidth tagged antenna is 14.44+ j145.55 omega, and the input impedance value is close to the conjugate value of the impedance value of the tag chip, namely 13.5-j145 omega, which shows that the dual-frequency point ultrahigh-frequency bandwidth tagged antenna and the tag chip achieve good matching effect.
The two-dimensional gain directional diagram of the dual-frequency point ultrahigh-frequency bandwidth tagged antenna under the frequency point of 850MHz is shown in fig. 4, the two-dimensional gain directional diagram of the dual-frequency point ultrahigh-frequency bandwidth tagged antenna under the frequency point of 920MHz is shown in fig. 5, when the two-dimensional gain directional diagram of the dual-frequency point ultrahigh-frequency bandwidth tagged antenna under the frequency point of 920MHz is analyzed in fig. 4 and 5, Theta is 0 degree, Phi is 0 degree and 90 degrees, and the maximum gain values of the dual-frequency point ultrahigh-frequency bandwidth tagged antenna under the two central frequency points of 850MHz and 920MHz are respectively 1.5dBi and 2.1 dBi.
The radiation efficiency diagrams of the dual-frequency point ultrahigh-frequency band-fed antenna at the two resonance points 850MHz and 920MHz are shown in fig. 6, and it can be known from an analysis of fig. 6 that the far-field radiation efficiencies at the two resonance points 850MHz and 920MHz are both greater than 96%, and the radiation efficiency values are 96.9% and 97.07%, respectively.
Claims (2)
1. A dual-frequency point ultra-high-frequency bandwidth tag antenna is characterized by comprising a dielectric substrate, a resonance structure, an impedance matching structure and a metal pad, wherein the resonance structure comprises a first resonance unit and a second resonance unit, the first resonance unit comprises a first rectangular metal microstrip line, a second rectangular metal microstrip line, a third rectangular metal microstrip line, a fourth rectangular metal microstrip line and a fifth rectangular metal microstrip line which are attached to the upper surface of the dielectric substrate, the first rectangular metal microstrip line is parallel to the third rectangular metal microstrip line, the fourth rectangular metal microstrip line and the fifth rectangular metal microstrip line are both parallel to the second rectangular metal microstrip line, the first rectangular metal microstrip line is positioned on the left side of the third rectangular metal microstrip line, the second rectangular metal microstrip line is positioned between the first rectangular metal microstrip line and the third rectangular metal microstrip line, the right end face of the first rectangular metal microstrip line is in fit connection with the left end face of the second rectangular metal microstrip line, the left end face of the third rectangular metal microstrip line is in fit connection with the right end face of the second rectangular metal microstrip line, the rear end face of the first rectangular metal microstrip line, the rear end face of the second rectangular metal microstrip line and the rear end face of the third rectangular metal microstrip line are located on the same plane, the fourth rectangular metal microstrip line and the fifth rectangular metal microstrip line are located between the first rectangular metal microstrip line and the third rectangular metal microstrip line, the fourth rectangular metal microstrip line is located on the right side of the fifth rectangular metal microstrip line, the right end face of the fourth rectangular metal microstrip line is in fit connection with the left end face of the third rectangular metal microstrip line, and the left end face of the fifth rectangular metal microstrip line and the right end face of the first rectangular metal microstrip line are located on the right side of the fifth rectangular metal microstrip line The front end face of the first rectangular metal microstrip line, the front end face of the second rectangular metal microstrip line, the front end face of the fourth rectangular metal microstrip line and the front end face of the fifth rectangular metal microstrip line are positioned on the same plane, the rear end face of the fourth rectangular metal microstrip line and the rear end face of the fifth rectangular metal microstrip line are positioned on the same plane, a distance is reserved between the left end face of the fourth rectangular metal microstrip line and the right end face of the fifth rectangular metal microstrip line, a first opening is formed between the left end face of the fourth rectangular metal microstrip line and the right end face of the fifth rectangular metal microstrip line, the length of the first rectangular metal microstrip line in the left-right direction, the length of the second rectangular metal microstrip line in the front-back direction and the length of the third rectangular metal microstrip line in the left-right direction, The length of the fourth rectangular metal microstrip line in the front-back direction is equal to that of the fifth rectangular metal microstrip line in the front-back direction; the length of the fourth rectangular metal microstrip line in the left-right direction is not equal to the length of the fifth rectangular metal microstrip line in the left-right direction; the second resonance unit comprises a sixth rectangular metal microstrip line, a seventh rectangular metal microstrip line and an eighth rectangular metal microstrip line which are attached to the upper surface of the dielectric substrate, the sixth rectangular metal microstrip line is positioned on the right side of the first rectangular metal microstrip line and is positioned between the fifth rectangular metal microstrip line and the second rectangular metal microstrip line, the sixth rectangular metal microstrip line is parallel to the first rectangular metal microstrip line, the rear end face of the sixth rectangular metal microstrip line is in fit connection with the front end face of the second rectangular metal microstrip line, a distance is reserved between the front end face of the sixth rectangular metal microstrip line and the rear end face of the fifth rectangular metal microstrip line, the seventh rectangular metal microstrip line is positioned on the right side of the sixth rectangular metal microstrip line and is positioned between the fifth rectangular metal microstrip line and the second rectangular metal microstrip line, the seventh rectangular metal microstrip line is parallel to the sixth rectangular metal microstrip line, a distance is arranged between the rear end face of the seventh rectangular metal microstrip line and the front end face of the second rectangular metal microstrip line, the eighth rectangular metal microstrip line is positioned between the sixth rectangular metal microstrip line and the seventh rectangular metal microstrip line, the left end face of the eighth rectangular metal microstrip line is in fit connection with the right end face of the sixth rectangular metal microstrip line, the right end face of the eighth rectangular metal microstrip line is in fit connection with the left end face of the seventh rectangular metal microstrip line, the front end face of the sixth rectangular metal microstrip line, the front end face of the seventh rectangular metal microstrip line and the front end face of the eighth rectangular metal microstrip line are positioned on the same plane, and the length of the sixth rectangular metal microstrip line along the left-right direction is positioned on the same plane, The length of the seventh rectangular metal microstrip line in the left-right direction is equal to the length of the eighth rectangular metal microstrip line in the front-back direction, and the length of the sixth rectangular metal microstrip line in the left-right direction is smaller than the length of the first rectangular metal microstrip line in the left-right direction; the impedance matching structure is located on the front side of the second rectangular metal microstrip line and on the right side of the second resonance unit, the impedance matching structure comprises a ninth rectangular metal microstrip line, a tenth rectangular metal microstrip line, an eleventh rectangular metal microstrip line and a twelfth rectangular metal microstrip line which are attached to the upper surface of the dielectric substrate, the ninth rectangular metal microstrip line and the tenth rectangular metal microstrip line are both parallel to the first rectangular metal microstrip line, the ninth rectangular metal microstrip line is located on the left side of the tenth rectangular metal microstrip line, the rear end surface of the ninth rectangular metal microstrip line and the rear end surface of the tenth rectangular metal microstrip line are respectively attached to the front end surface of the second rectangular metal microstrip line, the plane where the left end surface of the ninth rectangular metal microstrip line is located on the right side of the plane where the right end surface of the seventh rectangular metal microstrip line is located, a distance is arranged between the first rectangular metal microstrip line and the second rectangular metal microstrip line, a distance is arranged between the plane of the front end face of the ninth rectangular metal microstrip line and the plane of the rear end face of the seventh rectangular metal microstrip line, the eleventh rectangular metal microstrip line and the twelfth rectangular metal microstrip line are positioned between the ninth rectangular metal microstrip line and the tenth rectangular metal microstrip line, the eleventh rectangular metal microstrip line is positioned on the right side of the twelfth rectangular metal microstrip line, the right end face of the eleventh rectangular metal microstrip line is in fit connection with the left end face of the tenth rectangular metal microstrip line, the left end face of the twelfth rectangular metal microstrip line is in fit connection with the right end face of the ninth rectangular metal microstrip line, the front end face of the tenth rectangular metal microstrip line, a distance is arranged between the planes of the front end face and the rear end face of the seventh rectangular metal microstrip line, a distance is, The front end surface of the eleventh rectangular metal microstrip line and the front end surface of the twelfth rectangular metal microstrip line are located on the same plane, the rear end surface of the eleventh rectangular metal microstrip line and the rear end surface of the twelfth rectangular metal microstrip line are located on the same plane, the length of the eleventh rectangular metal microstrip line in the left-right direction is not equal to the length of the twelfth rectangular metal microstrip line in the left-right direction, a distance is reserved between the left end surface of the eleventh rectangular metal microstrip line and the right end surface of the twelfth rectangular metal microstrip line, a second opening is formed between the left end surface of the eleventh rectangular metal microstrip line and the right end surface of the twelfth rectangular metal microstrip line, the length of the ninth rectangular metal microstrip line in the left-right direction, the length of the tenth rectangular metal microstrip line in the left-right direction, a second opening is formed between the left end surface of the eleventh rectangular metal microstrip line and the right end, The length of the eleventh rectangular metal microstrip line in the front-back direction is equal to that of the twelfth rectangular metal microstrip line in the front-back direction, the length of the ninth rectangular metal microstrip line in the left-right direction is greater than that of the sixth rectangular metal microstrip line in the left-right direction and smaller than that of the first rectangular metal microstrip line in the left-right direction, and the distance between the left end face of the ninth rectangular metal microstrip line and the right end face of the first rectangular metal microstrip line is not equal to the distance between the right end face of the tenth rectangular metal microstrip line and the left end face of the third rectangular metal microstrip line. The metal pad is attached to the upper surface of the dielectric substrate, is located on the front side of the impedance matching structure, and is opposite to a second opening formed between the right end face of the eleventh rectangular metal microstrip line and the left end face of the twelfth rectangular metal microstrip line.
2. The dual-frequency-point ultrahigh-bandwidth tag antenna according to claim 1, wherein the dielectric substrate is a rectangular parallelepiped structure, the dielectric substrate has a thickness of 0.6mm, a length of 104mm in the left-right direction, a width of 72.5m in the front-back direction, a plane of a left end surface of the first rectangular metal microstrip line is parallel to a plane of a left end surface of the dielectric substrate and a distance therebetween is 1mm, a plane of a rear end surface of the second rectangular metal microstrip line is parallel to a plane of a rear end surface of the dielectric substrate and a distance therebetween is 1mm, a plane of a right end surface of the third rectangular metal microstrip line is parallel to a plane of a right end surface of the dielectric substrate and a distance therebetween is 1mm, a plane of a front end surface of the fourth rectangular metal microstrip line is parallel to a plane of a front end surface of the dielectric substrate and a distance therebetween is 1mm, the length of the first rectangular metal microstrip line in the left-right direction is 5.5mm, the length of the second rectangular metal microstrip line in the front-back direction is 70.5mm, the length of the third rectangular metal microstrip line in the left-right direction is 91mm, the length of the fourth rectangular metal microstrip line in the left-right direction is 5.5mm, the length of the third rectangular metal microstrip line in the left-right direction is 5.5mm, the length of the fourth rectangular metal microstrip line in the front-back direction is 44mm, the length of the fifth rectangular metal microstrip line in the left-right direction is 45mm, the length of the fifth rectangular metal microstrip line in the front-back direction is 5.5mm, the length of the sixth rectangular metal microstrip line in the left-right direction is 3.1mm, the length of the seventh rectangular metal microstrip line in the front-back direction is 42.27mm, the length of the seventh rectangular metal microstrip line in the left-right direction is 3.1mm, the length of the fourth rectangular metal microstrip line in the front-back direction is 9.5mm, and the length of the eighth rectangular metal microstrip line in the left-right direction is 2.9, the length of the ninth rectangular metal microstrip line in the left-right direction is 3.1mm, the length of the ninth rectangular metal microstrip line in the left-right direction is 4.1mm, the length of the tenth rectangular metal microstrip line in the front-back direction is 11mm, the length of the eleventh rectangular metal microstrip line in the left-right direction is 9mm, the length of the eleventh rectangular metal microstrip line in the front-back direction is 4.1mm, the length of the twelfth rectangular metal microstrip line in the left-right direction is 9.1mm, and the length of the twelfth rectangular metal microstrip line in the front-back direction is 4.1 mm; the distance between the right end face of the first rectangular metal microstrip line and the left end face of the sixth rectangular metal microstrip line is 20.9mm, the distance between the right end face of the sixth rectangular metal microstrip line and the left end face of the ninth rectangular metal microstrip line is 5.7mm, the distance between the right end face of the ninth rectangular metal microstrip line and the left end face of the tenth rectangular metal microstrip line is 18.6mm, and the distance between the right end face of the tenth rectangular metal microstrip line and the left end face of the third rectangular metal microstrip line is 34.5 mm.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114070359A (en) * | 2021-11-15 | 2022-02-18 | 杭州电子科技大学温州研究院有限公司 | Implantable energy and data simultaneous wireless transmission system and design method thereof |
| CN114070359B (en) * | 2021-11-15 | 2022-10-18 | 杭州电子科技大学温州研究院有限公司 | Implantable energy and data simultaneous wireless transmission system and design method thereof |
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