CN112909123B - Copper plating process for crystalline silicon heterojunction solar cell - Google Patents
Copper plating process for crystalline silicon heterojunction solar cell Download PDFInfo
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- CN112909123B CN112909123B CN202110077769.3A CN202110077769A CN112909123B CN 112909123 B CN112909123 B CN 112909123B CN 202110077769 A CN202110077769 A CN 202110077769A CN 112909123 B CN112909123 B CN 112909123B
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 40
- 239000010949 copper Substances 0.000 title claims abstract description 24
- 238000007747 plating Methods 0.000 title claims abstract description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 18
- 230000008569 process Effects 0.000 title claims abstract description 16
- 238000009713 electroplating Methods 0.000 claims abstract description 38
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 30
- -1 hydroxyethyl carbamide Chemical compound 0.000 claims abstract description 25
- 239000008367 deionised water Substances 0.000 claims abstract description 19
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 19
- HPPWMWCITPGPKK-UHFFFAOYSA-M sodium;1-hydroxy-3-oxododecane-1-sulfonate Chemical compound [Na+].CCCCCCCCCC(=O)CC(O)S([O-])(=O)=O HPPWMWCITPGPKK-UHFFFAOYSA-M 0.000 claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000003112 inhibitor Substances 0.000 claims abstract description 17
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims abstract description 16
- 235000013877 carbamide Nutrition 0.000 claims abstract description 16
- 239000004202 carbamide Substances 0.000 claims abstract description 16
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims abstract description 15
- 239000004372 Polyvinyl alcohol Substances 0.000 claims abstract description 15
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 claims abstract description 15
- 229920002451 polyvinyl alcohol Polymers 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical group C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 6
- 238000005282 brightening Methods 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- 239000011734 sodium Substances 0.000 claims description 6
- 229910052708 sodium Inorganic materials 0.000 claims description 6
- 238000004381 surface treatment Methods 0.000 claims description 6
- 229920001577 copolymer Polymers 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- IDOXWJBDKYSCFL-UHFFFAOYSA-N ethanol pentahydrate Chemical compound CCO.O.O.O.O.O IDOXWJBDKYSCFL-UHFFFAOYSA-N 0.000 claims description 4
- 238000002791 soaking Methods 0.000 claims description 4
- 229920001451 polypropylene glycol Polymers 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 17
- 239000011248 coating agent Substances 0.000 description 16
- 238000000576 coating method Methods 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- SMGLHFBQMBVRCP-UHFFFAOYSA-N 3-hydroxypropanamide Chemical compound NC(=O)CCO SMGLHFBQMBVRCP-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to the technical field of solar cells, and particularly relates to a copper plating process for a crystalline silicon heterojunction solar cell. The invention relates to an electroplating solution for a crystalline silicon heterojunction solar cell, which comprises the following components in concentration: 80-150 g/L of copper sulfate pentahydrate; 45-55 mg/L of chloride ions; 20-300 mg/L of brightener; 1-150 mg/L of sodium houttuyfonate; 5-30 mg/L of inhibitor; 18-45 mg/L of hydroxyethyl carbamide; 150-220 mg/L of polyvinyl alcohol; 40-90 g/L of sulfuric acid; the balance of deionized water. After the electroplating solution is applied to a copper plating process for a crystalline silicon heterojunction solar cell, the gate wire copper plating layer in the obtained crystalline silicon cell piece is small in width, high in TP value, uniform and compact.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a copper plating process for a crystalline silicon heterojunction solar cell.
Background
The core of photovoltaic power generation is a solar cell which can convert solar energy into electric energy. With the guidance of the development of the technology, heterojunction solar cells are produced at the same time.
In the heterojunction solar cell process, surface metallization is a critical step for determining the cell efficiency and the cell cost, and requires a metal to have high bonding strength and low contact resistance with a silicon interface, and also requires a high conduction path for the output of current. Traditionally, screen printing technology is adopted, but due to the technical restriction of screen printing, the width of the grid line is large, and the grid line has a small aspect ratio, namely the width of the grid line is 100 μm, and the height of the grid line can only reach 12 μm at most. In order to solve the above technical problems, a newly developed process has been developed to manufacture the shape of the gate line by removing the silicon nitride anti-reflective layer on the surface through laser grooving and photolithography, and then prepare a conductive layer on the diffusion barrier layer through the diffusion barrier layer, so as to appropriately increase the aspect ratio of the gate line. For example, chinese patent CN105226112A discloses a method for manufacturing a high-efficiency crystalline silicon solar cell, which comprises the following steps: cleaning a silicon wafer; preparing a nano-micro composite suede; preparing an emitter; insulating the edge of the silicon chip and polishing the back; preparing a front silicon dioxide layer; preparing a back passivation film; preparing a front antireflection layer; laser grooving on the back; preparing a full aluminum back surface field; sintering; preparing a tin back electrode; laser grooving on the front surface; preparing a front electrode; and (6) annealing. The invention adopts a reactive ion etching or metal-assisted chemical corrosion method to prepare the suede of the nano-micro composite structure, so that the absorption and utilization of light are comprehensively increased, and the conversion efficiency of the solar cell can be effectively improved; meanwhile, the invention adopts the electroplating technology to prepare the positive electrode of the solar cell, thereby greatly reducing the use of noble metals and reducing the production cost.
However, in the actual process, for example, in the metallization of the copper front electrode of the Ni/Cu double-layer electrode structure, after nickel is deposited at the position after the groove is opened as the diffusion of the contact layer and the copper, and then the deposition of the copper of the conductive layer is performed, the width of the gate line exceeds the width of the original deposited nickel, and the performance of the solar cell is finally affected. Therefore, if the aspect ratio of the gate line can be increased as much as possible to obtain a smaller width and realize a high gate line, the performance of the cell will be greatly improved.
Disclosure of Invention
The invention aims to provide a copper plating process for a crystalline silicon heterojunction solar cell, which improves the composition of electroplating solution used in the copper plating process, and the crystalline silicon cell sheet obtained after application has the advantages of small gate wire copper plating layer width, high TP value, uniformity and compactness.
In order to achieve the purpose, the invention adopts the following technical scheme:
an electroplating solution for a crystalline silicon heterojunction solar cell comprises the following components in concentration:
80-150 g/L of copper sulfate pentahydrate;
45-55 mg/L of chloride ions;
20-300 mg/L of brightener;
1-150 mg/L of sodium houttuyfonate;
5-30 mg/L of inhibitor;
18-45 mg/L of hydroxyethyl carbamide;
150-220 mg/L of polyvinyl alcohol;
40-90 g/L of sulfuric acid;
the balance of deionized water.
In order to reduce the width of a grid wire copper coating after electroplating, the inventor reduces the width of the grid wire before electroplating, but the reduction of the width of the grid wire before electroplating makes the internal exchange difficulty coefficient of the grid wire during electroplating larger, the deep plating capability is influenced, and the height-width ratio of the grid wire is reduced on the contrary.
Further, hydroxyethyl carboxamide can play a role in promoting the copper surface to be kept uniform.
Preferably, the following concentrations of components are included:
100-120 g/L of copper sulfate pentahydrate;
45-55 mg/L of chloride ions;
150-200 mg/L of brightener;
50-100 mg/L of sodium houttuyfonate;
25-30 mg/L of inhibitor;
25-30 mg/L of hydroxyethyl carbamide;
180-210 mg/L of polyvinyl alcohol;
40-60 g/L of sulfuric acid;
the balance of deionized water.
Preferably, the brightener is sodium polydithio-dipropyl sulfonate.
Preferably, the inhibitor is polypropylene oxide or an ethylene oxide-propylene oxide copolymer.
The invention also aims to provide a preparation method of the electroplating solution for the crystalline silicon heterojunction solar cell, which comprises the following steps:
sequentially adding the calculated amounts of polyvinyl alcohol, blue copperas, chloride ions, brightening agent, sodium houttuyfonate, inhibitor and hydroxyethyl carbamide into deionized water, uniformly mixing, and then adding sulfuric acid to obtain the finished product.
Still another object of the present invention is to provide the use of the plating solution in a copper plating process for crystalline silicon heterojunction solar cells.
The invention finally aims to provide a copper plating process for the crystalline silicon heterojunction solar cell, which comprises the following steps:
s1) carrying out surface treatment on the semi-finished crystal silicon cell to obtain a pretreated crystal silicon cell;
s2), immersing the pretreated crystalline silicon battery piece obtained in the step S2 into electroplating solution for standby, connecting a circuit, and electroplating for 30-60 min.
Preferably, the surface treatment comprises the following specific steps: and (3) soaking the crystalline silicon battery piece in acetone, ethanol pentahydrate and deionized water for 3-5 min in sequence, and drying.
Preferably, the working temperature of the electroplating is 18-25 ℃, and the working current density is 1.5-5A/dm2。
Compared with the prior art, the invention has the following beneficial effects:
(1) according to the invention, the electroplating solution suitable for the surface metallization treatment of the crystalline silicon cell is prepared firstly, and after the electroplating solution is applied, experiments show that the obtained crystalline silicon cell has small gate wire copper coating width and high TP value, and is suitable for the production of the crystalline silicon solar cell.
(2) The gate line cladding layer in the crystalline silicon solar cell piece obtained by the application of the invention is uniform and compact, and the influence of the cladding layer on the crystalline silicon solar cell piece is reduced.
Detailed Description
The present invention will be described in further detail with reference to the following examples. It should not be understood that the scope of the above-described subject matter of the present invention is limited to the following examples.
In the embodiment of the invention, the semi-finished crystalline silicon cell is a crystalline silicon cell in the prior art, which is subjected to laser grooving (groove width 15 μm and groove height 15 μm), photoetching to obtain a gate line morphology, and physical vapor deposition of a diffusion barrier layer copper layer (with a thickness of 20 nm).
Example 1
An electroplating solution for a crystalline silicon heterojunction solar cell comprises the following components in concentration:
120g/L of blue vitriol; 45mg/L of chloride ions; 150mg/L of sodium polydithio dipropyl sulfonate; 80mg/L of sodium houttuyfonate; inhibitor (polypropylene oxide) 25 mg/L; 20mg/L of hydroxyethyl carbamide; 180mg/L of polyvinyl alcohol; 45g/L of sulfuric acid; the balance of deionized water.
The preparation method of the electroplating solution for the crystalline silicon heterojunction solar cell comprises the following steps:
sequentially adding the calculated amounts of polyvinyl alcohol, blue copperas, chloride ions, brightening agent, sodium houttuyfonate, inhibitor and hydroxyethyl carbamide into deionized water, uniformly mixing, and then adding sulfuric acid to obtain the finished product.
Example 2
An electroplating solution for a crystalline silicon heterojunction solar cell comprises the following components in concentration:
120g/L of blue vitriol; chloride ion 50 mg/L; 180mg/L of sodium polydithio-dipropyl sulfonate; 90mg/L of sodium houttuyfonate; inhibitor (ethylene oxide-propylene oxide copolymer) 30 mg/L; 25mg/L of hydroxyethyl carbamide; 200mg/L of polyvinyl alcohol; 50g/L of sulfuric acid; the balance of deionized water.
The preparation method of the electroplating solution for the crystalline silicon heterojunction solar cell comprises the following steps:
sequentially adding the calculated amounts of polyvinyl alcohol, blue copperas, chloride ions, brightening agent, sodium houttuyfonate, inhibitor and hydroxyethyl carbamide into deionized water, uniformly mixing, and then adding sulfuric acid to obtain the finished product.
Example 3
An electroplating solution for a crystalline silicon heterojunction solar cell comprises the following components in concentration:
100g/L of blue vitriol; chloride ion 50 mg/L; 180mg/L of sodium polydithio-dipropyl sulfonate; 100mg/L of sodium houttuyfonate; inhibitor (ethylene oxide-propylene oxide copolymer) 25 mg/L; hydroxyethyl carbamide 30 mg/L; 210mg/L of polyvinyl alcohol; 50g/L of sulfuric acid; the balance of deionized water.
The preparation method of the electroplating solution for the crystalline silicon heterojunction solar cell comprises the following steps:
sequentially adding the calculated amounts of polyvinyl alcohol, blue copperas, chloride ions, brightening agent, sodium houttuyfonate, inhibitor and hydroxyethyl carbamide into deionized water, uniformly mixing, and then adding sulfuric acid to obtain the finished product.
Example 4
An electroplating solution for a crystalline silicon heterojunction solar cell comprises the following components in concentration:
150g/L of blue vitriol; chloride ion 50 mg/L; 200mg/L of sodium polydithio dipropyl sulfonate; 120mg/L of sodium houttuyfonate; inhibitor (ethylene oxide-propylene oxide copolymer) 30 mg/L; 40mg/L of hydroxyethyl carbamide; 220mg/L of polyvinyl alcohol; 60g/L of sulfuric acid; the balance of deionized water.
The preparation method of the electroplating solution for the crystalline silicon heterojunction solar cell comprises the following steps:
sequentially adding the calculated amounts of polyvinyl alcohol, blue copperas, chloride ions, brightening agent, sodium houttuyfonate, inhibitor and hydroxyethyl carbamide into deionized water, uniformly mixing, and then adding sulfuric acid to obtain the finished product.
Comparative example 1
Similar to example 2, except that sodium houttuyfonate and hydroxyethyl carboxamide were not added.
Comparative example 2
Similar to example 2, except that sodium houttuyfonate was not added.
Comparative example 3
Similar to example 2, except that no hydroxyethyl carboxamide was added.
Application examples 1 to 4
The electroplating solutions of examples 1 to 4 are respectively applied to a copper plating process for a crystalline silicon heterojunction solar cell, and the electroplating solutions comprise the following steps:
s1) performing surface treatment on the semi-finished crystal silicon cell (soaking the crystal silicon cell for 5min by using acetone, ethanol pentahydrate and deionized water in sequence, and drying to obtain a pretreated crystal silicon cell;
s2) immersing the pretreated crystal silicon battery piece obtained in the step S2 into electroplating solution for standby, connecting a circuit, and electroplating for 35min at the working temperature of 18 ℃ and the working current density of 2.5A/dm2And (4) finishing.
Application comparative examples 1 to 3
The electroplating solutions of comparative examples 1-3 are respectively applied to a copper plating process for a crystalline silicon heterojunction solar cell, and the electroplating process comprises the following steps:
s1) performing surface treatment on the semi-finished crystal silicon cell (soaking the crystal silicon cell for 5min by using acetone, ethanol pentahydrate and deionized water in sequence, and drying to obtain a pretreated crystal silicon cell;
s2) immersing the pretreated crystal silicon battery piece obtained in the step S2 into electroplating solution for standby, connecting a circuit, and electroplating for 35min at the working temperature of 18 ℃ and the working current density of 2.5A/dm2And (4) finishing.
Experiment I, determination of plating layer Performance
1.1 determination of TP value: the blind throwing power test was referenced and the TP value was determined for A, B at both ends of the gate line and for the midpoint C connecting points A and B.
1.2 Gray line Width determination
TABLE 1 test results
As can be seen from Table 1, the TP values of the points A, B and C in the application examples 1-4 are high and close to each other, and the gate line width is small. Compared with application example 2, the TP value of application comparative example 1 is reduced, and the gate line width is large; the TP value of the comparative example 2 is reduced, the gate line width is increased, and the sodium houttuyfonate can influence the growth of copper during electroplating; the TP value of comparative application 3 was reduced and the gate line width was increased, but the reduction or increase was less than that of comparative application 2, indicating that hydroxyethyl carbamide had less of an effect on copper growth than sodium houttuyfonate.
Experiment two, determination of plating morphology
The experimental method comprises the following steps: the surfaces and sections of the application examples/application comparative examples were observed by SEM.
| Group of | Surface of | Cross section of |
| Application example 1 | Uniform and compact coating | Uniform and compact coating |
| Application example 2 | Uniform and compact coating | Uniform and compact coating |
| Application example 3 | Uniform and compact coating | Uniform and compact coating |
| Application example 4 | Uniform and compact coating | Uniform and compact coating |
| Application comparative example 1 | Uneven coating with a small amount of pores | Uneven coating with a small amount of pores |
| Comparative application example 2 | Uniform coating | The plating layer is relatively uniform and has micro-pores |
| Comparative application example 3 | Uneven coating | Uneven coating |
As can be seen from Table 2, the coating layers of application examples 1 to 4 have good appearance properties. The plating layers on the surface and the cross section of the application comparative example 1 are uneven and have a small amount of pores; the coating applied to the section of comparative example 2 is not good; the plating applied in comparative example 3 was not uniform.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (9)
1. The electroplating solution for the crystalline silicon heterojunction solar cell is characterized by comprising the following components in concentration:
80-150 g/L of copper sulfate pentahydrate;
45-55 mg/L of chloride ions;
20-300 mg/L of brightener;
1-150 mg/L of sodium houttuyfonate;
5-30 mg/L of inhibitor;
18-45 mg/L of hydroxyethyl carbamide;
150-220 mg/L of polyvinyl alcohol;
40-90 g/L of sulfuric acid;
the balance of deionized water.
2. The plating solution for a crystalline silicon heterojunction solar cell according to claim 1, comprising the following components in concentration:
100-120 g/L of copper sulfate pentahydrate;
45-55 mg/L of chloride ions;
150-200 mg/L of brightener;
50-100 mg/L of sodium houttuyfonate;
25-30 mg/L of inhibitor;
25-30 mg/L of hydroxyethyl carbamide;
180-210 mg/L of polyvinyl alcohol;
40-60 g/L of sulfuric acid;
the balance of deionized water.
3. The plating solution for a crystalline silicon heterojunction solar cell according to claim 1 or 2, wherein the brightener is sodium polydithio dipropyl sulfonate.
4. The plating solution for a crystalline silicon heterojunction solar cell according to claim 1 or 2, wherein the inhibitor is polypropylene oxide or an ethylene oxide-propylene oxide copolymer.
5. The preparation method of the electroplating solution for the crystalline silicon heterojunction solar cell according to any one of claims 1 to 4, which is characterized by comprising the following steps:
sequentially adding the calculated amounts of polyvinyl alcohol, blue copperas, chloride ions, brightening agent, sodium houttuyfonate, inhibitor and hydroxyethyl carbamide into deionized water, uniformly mixing, and then adding sulfuric acid to obtain the finished product.
6. Use of the electroplating solution according to any one of claims 1 to 4 in a copper plating process for a crystalline silicon heterojunction solar cell.
7. Use according to claim 6, characterized in that it comprises the following steps:
s1) carrying out surface treatment on the semi-finished crystal silicon cell to obtain a pretreated crystal silicon cell;
s2), immersing the pretreated crystalline silicon battery piece obtained in the step S2 into electroplating solution for standby, connecting a circuit, and electroplating for 30-60 min.
8. The use according to claim 7, characterized in that the specific steps of the surface treatment are:
and (3) soaking the semi-finished crystal silicon battery piece in acetone, ethanol pentahydrate and deionized water for 3-5 min in sequence, and drying.
9. The use according to claim 7, wherein the electroplating is carried out at an operating temperature of 18 to 25 ℃ and an operating current density of 1.5 to 5A/dm2。
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2018057490A1 (en) * | 2016-09-22 | 2018-03-29 | Macdermid Enthone Inc. | Copper plating method and composition for semiconductor substrates |
| CN110896108A (en) * | 2018-09-12 | 2020-03-20 | 福建金石能源有限公司 | Manufacturing method of back contact heterojunction solar cell with double-sided power generation |
| CN111962051A (en) * | 2020-08-21 | 2020-11-20 | 广州三孚新材料科技股份有限公司 | Chemical copper plating solution for heterojunction solar battery and preparation method thereof |
| CN112126952A (en) * | 2020-09-22 | 2020-12-25 | 广州三孚新材料科技股份有限公司 | Copper electroplating solution for heterojunction solar cell and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2018057490A1 (en) * | 2016-09-22 | 2018-03-29 | Macdermid Enthone Inc. | Copper plating method and composition for semiconductor substrates |
| CN110896108A (en) * | 2018-09-12 | 2020-03-20 | 福建金石能源有限公司 | Manufacturing method of back contact heterojunction solar cell with double-sided power generation |
| CN111962051A (en) * | 2020-08-21 | 2020-11-20 | 广州三孚新材料科技股份有限公司 | Chemical copper plating solution for heterojunction solar battery and preparation method thereof |
| CN112126952A (en) * | 2020-09-22 | 2020-12-25 | 广州三孚新材料科技股份有限公司 | Copper electroplating solution for heterojunction solar cell and preparation method thereof |
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