CN112909119A - Long-wave flexible infrared detector at room temperature and preparation method thereof - Google Patents
Long-wave flexible infrared detector at room temperature and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a long-wave flexible infrared detector at room temperature and a preparation method thereof, and the detector is based on Ti2O3The responsivity and the responsivity speed of the long-wave flexible infrared detector of the material at room temperature are improved, and the detection of long-wave infrared band light at room temperature is realized. The method comprises the following steps: preparing a long-wave flexible infrared detector at room temperature: obtaining a flexible base material (PET, PEN); preparing an interdigital Au electrode layer on a flexible substrate material by thermal evaporation; for use on interdigital Au electrode layersPreparing a graphene semiconductor layer (a single-layer graphene layer) by a micro-mechanical stripping method; spin coating Ti on a single graphene layer2O3A photosensitive layer. The flexible infrared detector realizes detection of long-wave infrared light of 4.5-10 μm at room temperature, wherein Ti2O3And a semiconductor heterojunction is formed with the graphene, so that a room-temperature working mechanism of the long-wave infrared detector is realized, and indexes such as responsivity, response speed and the like are improved.
Description
Technical Field
The invention relates to the technical field of photoelectric detection, in particular to a long-wave flexible infrared detector at room temperature and a preparation method thereof.
Background
In recent years, with the wide application of infrared photodetectors in the military field, scientific research, industrial and agricultural production, medical and health, and daily life, the related technologies have been developed rapidly. However, current infrared photoelectric materials with high responsivity and high detectivity, such as group III-V binary compound semiconductors, generally require complex manufacturing processes, and also require cooling of device dark current noise during long-wave infrared band detection, and the high-cost low-noise operation cooling mechanism causes the photonic infrared detector to be greatly limited in civilian range. In addition, with the continuous development of modern society, the demand and application range of miniaturization, portability and light weight of optoelectronic devices are also increasing.
The flexible photoelectric detector has the advantages of light weight design, portability, high large-area compatibility, low cost and the like, so that the flexible photoelectric detector has very important application prospect in the field of future photoelectronic devices. In recent years, the research popularity of flexible photoelectric detectors at home and abroad is high, and a series of original research works are carried out around the realization of two performance indexes of high responsivity and good flexibility. The sensing candidate material with high absorption coefficient can greatly absorb photons and generate photon-generated carriers as a photosensitive layer so as to obtain higher sensitivity. With respect to mechanical flexibility, a flexible photodetector is capable of repeated bending, stretching, or folding without significant degradation of device performance. Therefore, aiming at the structural design of the flexible photoelectric detector, the selected photosensitive layer material needs to meet the bending requirement to a certain degree, and the electrical and optical properties of the device are not obviously reduced.
According to the working principle of the detector, the infrared detector can be divided into a refrigeration type and a non-refrigeration type. The refrigeration type detector is represented by an HgCdTe detector and a GaAs/AlGaAs quantum well detector, has high sensitivity, long detection distance, high response speed and stable performance, but needs a refrigeration device during working to cause large equipment volume, large consumption and high manufacturing cost, and is mainly applied to high-end fields of spaceflight, ships and warships and the like. The non-refrigeration infrared detector is represented by vanadium oxide and amorphous silicon micrometering thermal radiation, is small in size, convenient to carry and capable of working at room temperature, but is low in sensitivity, short in observation distance and low in response speed, and meets general military requirements and most civil requirements. Generally, when the detection environment is more demanding, the two types of detectors are used in combination. In view of the above, there is a need to develop a long-wave infrared detector with high responsivity and capable of working at room temperature.
Titanium is one of the elements abundant on earth, and its oxide includes titanium dioxide (TiO)2) And strontium titanium oxide (SrTiO)3) The two materials can be widely applied to the technical fields of electronics, energy conversion, catalysis, sensing and the like. In general, the Ti ion in the compound has a valence of 4+ and is SrTiO3As typified by SrTiO3Not only is a popular thin film growth substrate, but also has the physical and chemical characteristics of superconductivity, blue light emission, insulator-metal transition, photocatalysis and the like. TiO 22The photocatalyst generates electrons and holes under irradiation of light, and exhibits strong oxidation and reduction capabilities. Thus, TiO2The film has great application prospect in the aspects of environmental management, medical treatment and public health and the field of building materials. TiO 22The film as the green environment-friendly photocatalytic material with the most development prospect has been the focus of domestic and foreign research.
Disclosure of Invention
The invention aims to design a flexible infrared detector for long waves at room temperature and a preparation method thereof, wherein the flexible infrared detector for long waves at room temperature can realize long-wave infrared detection at room temperature; the preparation method is based on graphene/Ti2O3The mixed material is used as a photosensitive layer to be deposited on a flexible substrate (flexible base material), and the narrow-bandgap semiconductor Ti is prepared by graphene and a ball milling method2O2The nanoparticles mix to form a chamberTemperature and long wave infrared photoelectric detector.
The invention is realized by the following technical scheme: the flexible infrared detector comprises a flexible substrate material, an interdigital Au electrode layer prepared on the flexible substrate material, a single-layer graphene layer prepared on the interdigital Au electrode layer, and Ti prepared on the single-layer graphene layer2O3A photosensitive layer.
Wherein, single graphene layer/Ti2O3The photosensitive layer structure realizes the detection of long-wave infrared spectrum; single graphene layer/Ti2O3The photosensitive layer structure greatly improves the responsivity and the response speed, and simultaneously realizes the room temperature stable work of the long-wave photon type infrared detector (namely, a long-wave flexible infrared detector at room temperature).
In order to better realize the flexible infrared detector for long waves at room temperature, the interdigital Au electrode layer is prepared on the flexible substrate material by thermal evaporation in a mask mode.
In order to better realize the long-wave flexible infrared detector at room temperature, the single-layer graphene layer is prepared on the interdigital Au electrode layer by adopting a micro-mechanical stripping method.
In order to better realize the long-wave flexible infrared detector at room temperature, Ti is obtained by a ball milling method2O3Nanoparticles of Ti2O3Dispersing nano particles into an ethanol solution, and then spin-coating the nano particles on the single-layer graphene layer to form the Ti2O3A photosensitive layer.
In order to further better realize the flexible infrared detector for long waves at room temperature, the flexible substrate material is PET or PEN.
PET or PEN is used as a flexible substrate, and an interdigital Au electrode layer, a single-layer graphene layer (graphene semiconductor layer) and Ti are sequentially prepared on the flexible substrate2O3The photosensitive layer can be used for detecting long-wave infrared, especially at room temperature (i.e. at room temperature of long-wave flexible infrared detector at room temperature)Working mechanism) and is also greatly improved in terms of responsivity and response speed.
In order to further better realize the long-wave flexible infrared detector at room temperature, the Ti2O3A heterojunction structure formed by the photosensitive layer and the single graphene layer (graphene semiconductor layer) when photons are Ti2O3The nanoparticles absorb and generate electron-hole pairs comprising photo-generated electrons and photo-generated holes, wherein the photo-generated electrons are absorbed by Ti2O3And capturing, wherein the photoproduction cavity is transferred to the graphene channel, so that the formation of a graphene hybrid state is promoted, the response speed of the long-wave flexible infrared detector at room temperature is favorably improved, and the room-temperature working mechanism of the long-wave flexible infrared detector at room temperature can be realized.
In order to better realize the long-wave flexible infrared detector at room temperature, the interdigital Au electrode layer is used for collecting photo-generated electrons and photo-generated holes, and the Ti layer is used for collecting photo-generated electrons and photo-generated holes2O3The photosensitive layer is used for absorbing photon energy to generate photon-generated carriers; as a preferable arrangement scheme, an interdigital Au electrode is prepared on a PET flexible substrate by thermal evaporation and is used for collecting electrons and holes; preparing a graphene semiconductor layer (a single-layer graphene layer) on the interdigital Au electrode layer; spin coating Ti onto the single-layer graphene layer2O3And the photosensitive layer is used for absorbing photon energy to generate photon-generated carriers.
A method for preparing a long-wave flexible infrared detector at room temperature comprises the following steps:
1) obtaining a flexible substrate material;
2) ultrasonically cleaning the flexible substrate material in liquid detergent, acetone, ethanol and deionized water in sequence, and drying the cleaned flexible substrate material; after drying, UV-O is used3Treating the substrate material (flexible base material) for 15-60min (preferably 30min) to enhance the hydrophilicity of the substrate material;
3) preparing an interdigital Au electrode layer on the dried flexible substrate material by adopting a mask mode through thermal evaporation;
4) preparing a single-layer graphene layer on the interdigital Au electrode layer by a micro-mechanical stripping method;
5) ti obtained by ball milling2O3And dispersing the nano particles in an ethanol solution, and then spin-coating the nano particles on the graphene layer to obtain the flexible infrared detector.
In order to better realize the preparation method of the flexible infrared detector for long waves at room temperature, when the single-layer graphene layer is prepared, the adhesive tape (preferably 3M transparent adhesive tape) is used for repeatedly adhering high-orientation pyrolytic graphite for many times until single-layer graphene is obtained, and then the graphene on the adhesive tape is directly deposited on the interdigital Au electrode layer by a dry deposition method, so that the graphene existing at room temperature is obtained.
In order to better realize the preparation method of the long-wave flexible infrared detector at room temperature, Ti is prepared by a ball milling method2O3In the case of nanoparticles, the diameters of the used agate balls are 10mm and 5mm respectively, the rotation speed during ball milling is 200-450rpm (preferably 300rpm), and the time is 24-72h (preferably 48 h).
As a preferable setting scheme, the flexible substrate material is ultrasonically cleaned in acetone, ethanol and deionized water for about half an hour in sequence, the cleaned flexible substrate material is placed in a hot oven for half an hour until the flexible substrate material is dried, and then an ultraviolet UV lamp irradiates for 15-60min (preferably 30min) to increase the hydrophilicity of the flexible substrate material.
Compared with the prior art, the invention has the following advantages and beneficial effects:
with TiO2And SrTiO3In contrast, Ti is used in the present invention2O3The bandgap is about 0.09eV, and narrow bandgap semiconductors have smaller optical bandgaps than silicon, generally have excellent transport properties and strong light absorption, and can extend to the absorption range of the mid-infrared band. Therefore, these semiconductor materials are also commonly used as light sensitive layers for long wave infrared photodetectors and pyroelectric devices. Wherein, Ti2O3The photo-thermal characteristic of the composite material is used for manufacturing novel photo-thermal conversion materials and photo-thermal nano composite materials, and has very wide application in the fields of photo-thermal heaters, solar steam generators, seawater desalinizers and the likeThe application prospect of (1). Long-wave infrared photoelectric detection is one of important applications of narrow-bandgap semiconductors, the atmospheric transmittance of the earth is very high at about 10 μm, and the waveband can be used for communication. However, in this band, the most effective material at present is HgCdTe, the long-wave infrared detector based on HgCdTe needs to be cooled to the temperature close to liquid nitrogen (77K) to reduce thermal excitation noise, and besides, the semiconductor with narrow band gap mostly contains Hg, As, Pb, Te and other elements, and has toxicity or harm, Ti mentioned in the invention is2O3Is a narrow bandgap oxide semiconductor which is environmentally friendly. Therefore, the material is used as a long-wave infrared photoelectric material, and the physical properties of the material are researched to prepare room-temperature long-wave infrared detection, so that the material has great application value.
The prepared flexible infrared detector for long waves at room temperature can detect long-wave infrared rays of 4.5-10 mu m.
The long-wave flexible infrared detector at room temperature is based on graphene/Ti2O3The heterojunction long-wave infrared photosensitive material is prepared on a flexible substrate PET (or PEN), and graphene and a narrow-band-gap semiconductor Ti2O3After the nano particles are contacted, a composite heterojunction structure is formed, and a long-wave infrared photoelectric detector (a long-wave flexible infrared detector at room temperature) is successfully prepared.
The flexible infrared detector for long waves at room temperature can realize a room-temperature long-wave infrared detection mechanism and improve indexes such as device responsivity, response speed and the like.
Drawings
FIG. 1 is a schematic flow chart of a method for manufacturing a long-wave flexible infrared detector at room temperature according to the present invention.
FIG. 2 is a schematic diagram of the structure of the long-wave flexible infrared detector (the flexible substrate is PET) at room temperature.
Detailed Description
The present invention will be described in further detail with reference to examples, but the embodiments of the present invention are not limited thereto.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings of the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention.
In the description of the present invention, it is to be understood that the terms etc. indicate orientations or positional relationships based on those shown in the drawings only for the convenience of describing the present invention and simplifying the description, but do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
It is worth noting that: in the present application, when it is necessary to apply the known technology or the conventional technology in the field, the applicant may have the case that the known technology or/and the conventional technology is not specifically described in the text, but the technical means is not specifically disclosed in the text, and the present application is considered to be not in compliance with the twenty-sixth clause of the patent law.
Example 1:
the flexible infrared detector comprises a flexible substrate material, an interdigital Au electrode layer prepared on the flexible substrate material, a single-layer graphene layer prepared on the interdigital Au electrode layer, and Ti prepared on the single-layer graphene layer2O3A photosensitive layer.
Wherein, single graphene layer/Ti2O3The photosensitive layer structure realizes the detection of long-wave infrared spectrum; single graphene layer/Ti2O3The photosensitive layer structure greatly improves the responsivity and the response speed, and simultaneously realizes the room temperature stable work of the long-wave photon type infrared detector (namely, a long-wave flexible infrared detector at room temperature).
Example 2:
the present embodiment is further optimized based on the above embodiments, and the same parts as those in the foregoing technical solutions will not be described herein again, and further to better implement the long-wave flexible infrared detector of the present invention, the interdigital Au electrode layer is prepared on the flexible substrate material by thermal evaporation in a mask manner.
Example 3:
the present embodiment is further optimized based on any of the above embodiments, and the same parts as those in the foregoing technical solutions will not be described herein again, and further to better implement the long-wave flexible infrared detector of the present invention, the single-layer graphene layer is prepared on the interdigital Au electrode layer by using a micro-mechanical peeling method.
Example 4:
the present embodiment is further optimized based on any of the above embodiments, and the same parts as those in the foregoing technical solutions will not be described herein again, and further, in order to better implement the present invention, Ti is obtained by using a ball milling method for a long-wave flexible infrared detector at room temperature2O3Nanoparticles of Ti2O3Dispersing nano particles into an ethanol solution, and then spin-coating the nano particles on the single-layer graphene layer to form the Ti2O3A photosensitive layer.
Example 5:
the present embodiment is further optimized based on any of the above embodiments, and the same parts as those in the foregoing technical solutions will not be described herein again, and further to better implement the long-wave flexible infrared detector of the present invention, the flexible substrate material is PET or PEN.
PET or PEN is used as a flexible substrate, and an interdigital Au electrode layer, a single-layer graphene layer (graphene semiconductor layer) and Ti are sequentially prepared on the flexible substrate2O3The structure formed by the photosensitive layer can realize the detection of long-wave infrared, especially the detection of long-wave infrared at room temperature (namely the room temperature working mechanism of the long-wave flexible infrared detector at room temperature), and the responsivity and the response speed are greatly improved.
Example 6:
the present embodiment is further optimized based on any of the above embodiments, and the same parts as those in the foregoing technical solutions will not be described herein again, and further, to better implement the long-wave flexible infrared detector of the present invention at room temperature, the Ti is2O3A heterojunction structure formed by the photosensitive layer and the single graphene layer (graphene semiconductor layer) when photons are Ti2O3The nanoparticles absorb and generate electron-hole pairs comprising photo-generated electrons and photo-generated holes, wherein,photo-generated electron quilt Ti2O3And capturing, wherein the photoproduction cavity is transferred to the graphene channel, so that the formation of a graphene hybrid state is promoted, the response speed of the long-wave flexible infrared detector at room temperature is favorably improved, and the room-temperature working mechanism of the long-wave flexible infrared detector at room temperature can be realized.
Example 7:
the present embodiment is further optimized based on any of the above embodiments, and the same parts as those in the foregoing technical solutions will not be described herein again, and further to better implement the long-wave flexible infrared detector of the present invention, the interdigital Au electrode layer is used for collecting photo-generated electrons and photo-generated holes, and the Ti layer is used for collecting photo-generated electrons and photo-generated holes2O3The photosensitive layer is used for absorbing photon energy to generate photon-generated carriers; as a preferable arrangement scheme, an interdigital Au electrode is prepared on a PET flexible substrate by thermal evaporation and is used for collecting electrons and holes; preparing a graphene semiconductor layer (a single-layer graphene layer) on the interdigital Au electrode layer; spin coating Ti onto the single-layer graphene layer2O3And the photosensitive layer is used for absorbing photon energy to generate photon-generated carriers.
Example 8:
the embodiment is further optimized on the basis of any one of the embodiments, the parts which are the same as the technical scheme are not repeated herein, and the preparation method of the long-wave flexible infrared detector at room temperature comprises the following steps:
1) obtaining a flexible substrate material;
2) ultrasonically cleaning the flexible substrate material in liquid detergent, acetone, ethanol and deionized water in sequence, and drying the cleaned flexible substrate material; after drying, UV-O is used3Treating the substrate material (flexible base material) for 15-60min (preferably 30min) to enhance the hydrophilicity of the substrate material;
3) preparing an interdigital Au electrode layer on the dried flexible substrate material by adopting a mask mode through thermal evaporation;
4) preparing a single-layer graphene layer on the interdigital Au electrode layer by a micro-mechanical stripping method;
5) ti obtained by ball milling2O3And dispersing the nano particles in an ethanol solution, and then spin-coating the nano particles on the graphene layer to obtain the flexible infrared detector.
Example 9:
in this embodiment, the graphene layer is further optimized based on embodiment 8, and the same portions as those in the foregoing technical solution will not be described herein again, and further to better implement the method for preparing a room-temperature long-wave flexible infrared detector according to the present invention, when preparing the single-layer graphene layer, graphite is repeatedly highly and directionally pyrolyzed by adhering an adhesive tape (preferably, a 3M transparent adhesive tape) for multiple times until single-layer graphene is obtained, and then, graphene on the adhesive tape is directly deposited on the interdigital Au electrode layer by a dry deposition method to obtain graphene existing at room temperature, so as to form a final single-layer graphene layer.
Example 10:
the embodiment is further optimized on the basis of the embodiment 8 or 9, the same parts as the technical scheme are not repeated herein, and further, in order to better realize the preparation method of the long-wave flexible infrared detector at room temperature, Ti is prepared by a ball milling method2O3In the case of nanoparticles, the diameters of the used agate balls are 10mm and 5mm respectively, the rotation speed during ball milling is 200-450rpm (preferably 300rpm), and the time is 24-72h (preferably 48 h).
As a preferable setting scheme, the flexible substrate material is sequentially subjected to ultrasonic cleaning in acetone, ethanol and deionized water for about half an hour, the cleaned flexible substrate material is placed in a hot oven for half an hour until the flexible substrate material is dried, and then an Ultraviolet (UV) lamp irradiates for 15-60min (preferably 30min) to increase the hydrophilicity of the flexible substrate material.
Example 11:
as shown in step 1 of figure 1,
step 1: a flexible substrate material PET or PEN is first obtained.
Step 2: and thermally evaporating the interdigital Au electrode on the flexible substrate material to form an interdigital Au electrode layer. And after the flexible substrate material is obtained, forming an interdigital Au electrode layer with a certain thickness on the flexible substrate material. In this embodiment, a mask thermal evaporation method may be used.
And step 3: and preparing a graphene semiconductor layer on the interdigital Au electrode (Au electrode layer). In this embodiment, graphene is prepared on the interdigital Au electrode layer in the step 2, Highly Oriented Pyrolytic Graphite (HOPG) is repeatedly adhered by using a 3M transparent adhesive tape for many times until single-layer graphene is obtained, and then the graphene on the 3M transparent adhesive tape is directly deposited on a flexible substrate material having the interdigital Au electrode layer by using a dry deposition method, so that graphene existing at room temperature is obtained, and a final single-layer graphene layer is formed.
And 4, step 4: spin coating Ti on graphene substrate material (i.e. flexible substrate material with single graphene layer, interdigitated Au electrode layer)2O3A semiconductor layer. In this embodiment, a layer of Ti is spin-coated on the graphene semiconductor layer in step 32O3The speed is 3000-5000 rpm (preferably 4000rpm) during spin coating, the spin coating time is 15-60 s (preferably 20s), and after the spin coating process is finished, the mixture is dried in a drying oven for 10-24h (preferably 12h) at 80-200 ℃ (preferably 100 ℃).
Wherein Ti is spin-coated2O3Ti used for semiconductor layer2O3The preparation steps of the nanoparticle solution are as follows:
1. commercial Ti2O3(purchased from Sigma Aldrich, purity: 99.9%) raw materials were placed in a ball mill, wherein the diameters of the agate balls used in the ball milling were 10mm and 5mm, respectively.
2. The rotation speed of the ball mill is 200-450rpm (preferably 300rpm), and the time is 24-72h (preferably 48 h). Slowly adding ethanol solvent for dispersion in the ball milling process, wherein Ti2O3The mass ratio of the raw materials, the agate balls and the ethanol is about 1: 2: 1.5, and the total volume during grinding can not exceed 2/3 of the volume of the ball milling tank.
This embodiment should also include cleaning the flexible substrate material before performing step 2. The cleaning step comprises: ultrasonic cleaning in acetone, ethanol and deionized water for about half an hour; the substrate material (flexible base material) was dried in a drying oven for half an hour. Then UV-O3Treating the substrate material for 15-60min (preferably 30min) to increase the hydrophilicity of the flexible base materialFollowed by a graphene semiconductor layer and Ti2O3And (4) preparing a nano layer.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and all simple modifications and equivalent variations of the above embodiments according to the technical spirit of the present invention are within the scope of the present invention.
Claims (10)
1. The utility model provides a flexible infrared detector of long wave under room temperature which characterized in that: comprises a flexible substrate material, an interdigital Au electrode layer prepared on the flexible substrate material, a single-layer graphene layer prepared on the interdigital Au electrode layer, and Ti prepared on the single-layer graphene layer2O3A photosensitive layer.
2. A room temperature long wave flexible infrared detector as claimed in claim 1, wherein: the interdigital Au electrode layer is prepared on the flexible substrate material by thermal evaporation in a mask mode.
3. A room temperature long wave flexible infrared detector as claimed in claim 1, wherein: the single-layer graphene layer is prepared on the interdigital Au electrode layer by adopting a micro-mechanical stripping method.
4. A room temperature long wave flexible infrared detector as claimed in claim 1, wherein: obtaining Ti by ball milling2O3Nanoparticles of Ti2O3Dispersing nano particles into an ethanol solution, and then spin-coating the nano particles on the single-layer graphene layer to form the Ti2O3A photosensitive layer.
5. A room temperature long wave flexible infrared detector as claimed in claim 1, wherein: the flexible substrate material is PET or PEN.
6. A flexible infrared detector for long waves at room temperature as claimed in any one of claims 1 to 5, characterized in that: the Ti2O3A heterojunction structure formed by the photosensitive layer and the single-layer graphene layer when photons are Ti2O3Absorbing and generating electron-hole pairs comprising photogenerated electrons and photogenerated holes, wherein the photogenerated electrons are substituted with Ti2O3And (4) capturing, and transferring the photogenerated holes to the graphene channel to promote the formation of the graphene hybrid state.
7. The flexible infrared detector for long waves at room temperature as claimed in any one of claims 1 to 5, wherein: the interdigital Au electrode layer is used for collecting photoproduction electrons and photoproduction holes, and the Ti2O3The photoactive layer is configured to absorb photon energy to generate photogenerated carriers.
8. The method for preparing a long-wave flexible infrared detector at room temperature as claimed in any one of claims 1 to 7, characterized in that: the method comprises the following steps:
1) obtaining a flexible substrate material;
2) ultrasonically cleaning the flexible substrate material in liquid detergent, acetone, ethanol and deionized water in sequence, and drying the cleaned flexible substrate material;
3) preparing an interdigital Au electrode layer on the dried flexible substrate material;
4) preparing a single-layer graphene layer on the interdigital Au electrode layer;
5) mixing Ti2O3And dispersing the nano particles in an ethanol solution, and then spin-coating the nano particles on the graphene layer to obtain the flexible infrared detector.
9. The method for preparing a long-wave flexible infrared detector at room temperature as claimed in claim 8, wherein: when the single-layer graphene layer is prepared, the adhesive tape is used for repeatedly adhering highly-oriented pyrolytic graphite for many times until single-layer graphene is obtained, and then the graphene on the adhesive tape is directly deposited on the interdigital Au electrode layer by a dry deposition method, so that the graphene existing at room temperature is obtained.
10. According to the rightThe method for preparing a long-wave flexible infrared detector at room temperature according to claim 8 or 9, which is characterized by comprising the following steps: preparation of Ti by ball milling2O3In the case of nanoparticles, the diameters of the adopted agate balls are 10mm and 5mm respectively, the rotation speed during ball milling is 200-450rpm, and the time is 24-72 hours.
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