CN112893337A - High-temperature ethylene dichloride oxide cleaning process for wafer processing - Google Patents
High-temperature ethylene dichloride oxide cleaning process for wafer processing Download PDFInfo
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- CN112893337A CN112893337A CN202110082919.XA CN202110082919A CN112893337A CN 112893337 A CN112893337 A CN 112893337A CN 202110082919 A CN202110082919 A CN 202110082919A CN 112893337 A CN112893337 A CN 112893337A
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- minutes
- stabilizing
- dichloroethylene
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- cleaning process
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/02—Cleaning pipes or tubes or systems of pipes or tubes
- B08B9/027—Cleaning the internal surfaces; Removal of blockages
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a high-temperature ethylene dichloride cleaning process for wafer processing, which relates to the field of cleaning of diffusion furnace tubes and comprises the following steps: heating the diffusion furnace tube to 800 ℃; stabilizing for 1-10 minutes; introducing oxygen and nitrogen, and stabilizing for 1-5 minutes; closing the nitrogen and stabilizing for 1-5 minutes; introducing dichloroethylene, and stabilizing for 1-5 minutes; heating to 950 ℃, and stabilizing for 10-30 minutes; closing the dichloroethylene, and stabilizing for 1-5 minutes; heating to 1200-1325 ℃. The method effectively reduces the defect density on the surface of the oxidation layer by reducing the cleaning temperature of the dichloroethylene, and avoids the damage of byproducts of the decomposition of the dichloroethylene on the surface of the silicon wafer at high temperature.
Description
Technical Field
The invention relates to the field of cleaning of diffusion furnace tubes, in particular to a high-temperature ethylene dichloride cleaning process for wafer processing.
Background
When the diffusion furnace tube is oxidized at a high temperature, the temperature can reach 1200-1325 ℃, the current temperature range of the dichloroethylene is generally below 1200 ℃, when the temperature is above 1200 ℃, particularly above 1300 ℃, when a gas pipeline and an instant opening are carried out, the vapor pressure of the dichloroethylene is increased, so that the gas is partially liquefied and is decomposed into a by-product containing an acidic component, the surface of a silicon wafer is damaged, and a corrosion pit is formed.
Disclosure of Invention
Aiming at the problems in the prior art, the invention aims to provide a cleaning process for avoiding damage to the surface of a silicon wafer by cleaning with dichloroethylene during high-temperature oxidation of a diffusion furnace tube, and the technical purpose is realized by the following technical scheme: a high-temperature ethylene dichloride cleaning process for wafer processing comprises the step of cleaning a diffusion furnace tube by using ethylene dichloride, and is characterized by further comprising the following steps of:
s1: heating the diffusion furnace tube to 800 ℃;
s2: stabilizing for 1-10 minutes;
s3, introducing oxygen and nitrogen, and stabilizing for 1-5 minutes; closing the nitrogen and stabilizing for 1-5 minutes; introducing dichloroethylene, and stabilizing for 1-5 minutes;
s4: heating to 950 ℃, and stabilizing for 10-30 minutes;
s5: closing the dichloroethylene, and stabilizing for 1-5 minutes;
and S6, heating to 1200-1325 ℃.
Preferably: in the step S1, the temperature rise rate is 5-10 ℃ per minute from 750 ℃ to 800 ℃.
Preferably: in step S3, the gas ratio is: oxygen: nitrogen is 1: 3.
Preferably: in step S3, the oxygen gas is supplied at a flow rate of 5SLPM to 10SLPM and at a flow rate of 5 SLPM.
Preferably: in step S3, the flow rate of dichloroethylene is 100-1000SCCM, and the opening rate is 100-1000 SCCM.
Preferably: in the step S4, the temperature rise rate is 5-10 ℃ per minute from 800 ℃ to 950 ℃.
The invention has the beneficial effects that: the cleaning temperature of the dichloroethylene is reduced, and the defect density on the surface of the oxidation layer is effectively reduced; continuously introducing oxygen to react with the residual dichloroethylene in the furnace tube, so as to prevent the residual dichloroethylene from damaging the furnace tube; reducing the generation of acidic substances and preventing the corrosion of furnace tubes and various bearing tools; corrosion pits on the surface of the silicon wafer are reduced, the problem of peak diffusion in the subsequent doping process is reduced, and the yield is improved; the density of the oxide layer is improved, and the erosion of the subsequent etching process is prevented.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
The first embodiment is as follows: heating a diffusion furnace tube to 800 ℃, wherein the temperature is 750 ℃ to 800 ℃, and the heating rate is 5 ℃ per minute;
stabilizing for 1 minute;
then, oxygen and nitrogen are introduced, and the gas ratio is as follows: oxygen: nitrogen is 1:3, the opening rate is 5SLPM, the flow rate is 5SLPM, and the stability is 1 minute; then closing the nitrogen and stabilizing for 1 minute; then, dichloroethylene is introduced, the flow rate is 300SCCM, the introduction rate is 100SCCM, and the stability is kept for 1 minute;
then heating to 950 ℃, wherein the temperature is increased from 800 ℃ to 950 ℃, the heating rate is 5 ℃ per minute, and the temperature is stabilized for 10 minutes;
then the dichloroethylene is closed and stabilized for 1 minute;
finally, the temperature was raised to 1325 ℃.
Example two: heating a diffusion furnace tube to 800 ℃, wherein the temperature is from 750 ℃ to 800 ℃, and the heating rate is 7 ℃ per minute;
stabilizing for 3 minutes;
then, oxygen and nitrogen are introduced, and the gas ratio is as follows: oxygen: nitrogen is 1:3, the opening rate is 10SLPM, the flow rate is 5SLPM, and the stability is 5 minutes; then closing the nitrogen and stabilizing for 5 minutes; then, dichloroethylene is introduced, the flow rate is 1000SCCM, the introduction rate is 300SCCM, and the stability is carried out for 5 minutes;
then heating to 950 ℃, wherein the temperature is increased from 800 ℃ to 950 ℃, the heating rate is 10 ℃ per minute, and the temperature is stabilized for 30 minutes;
then the dichloroethylene is closed and stabilized for 5 minutes;
finally, the temperature is raised to 1200 ℃.
Example three: heating a diffusion furnace tube to 800 ℃, wherein the temperature is 750 ℃ to 800 ℃, and the heating rate is 10 ℃ per minute;
stabilizing for 5 minutes;
then, oxygen and nitrogen are introduced, and the gas ratio is as follows: oxygen: nitrogen is 1:3, the opening rate is 7SLPM, the flow rate is 5SLPM, and the stability is 3 minutes; then closing the nitrogen and stabilizing for 3 minutes; then, dichloroethylene is introduced, the flow rate is 100SCCM, the introduction rate is 1000SCCM, and the stability is carried out for 3 minutes;
then heating to 950 ℃, wherein the temperature is increased from 800 ℃ to 950 ℃, the heating rate is 7 ℃ per minute, and the temperature is stabilized for 20 minutes;
then the dichloroethylene is closed and stabilized for 3 minutes;
finally, the temperature is raised to 1280 ℃.
Example four: heating a diffusion furnace tube to 800 ℃, wherein the temperature is from 750 ℃ to 800 ℃, and the heating rate is 7 ℃ per minute;
stabilizing for 5 minutes;
then, oxygen and nitrogen are introduced, and the gas ratio is as follows: oxygen: nitrogen is 1:3, the opening rate is 5SLPM, the flow rate is 5SLPM, and the stability is 3 minutes; then closing the nitrogen and stabilizing for 5 minutes; then, introducing dichloroethylene at the flow rate of 300SCCM and the introduction rate of 1000SCCM, and stabilizing for 5 minutes;
then heating to 950 ℃, wherein the temperature rise rate is 7 ℃ per minute from 800 ℃ to 950 ℃, and stabilizing for 25 minutes;
then the dichloroethylene is closed and stabilized for 5 minutes;
finally, the temperature was raised to 1325 ℃.
All of the above four examples observed 20 production batches, with the results: the surface of the oxide layer with the thickness of 1000-2000 angstroms has no corrosion pit, and the cleaning effect is good.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (6)
1. A high-temperature ethylene dichloride oxide cleaning process for wafer processing is characterized by comprising the following steps:
s1: heating the diffusion furnace tube to 800 ℃;
s2: stabilizing for 1-10 minutes;
s3: introducing oxygen and nitrogen, and stabilizing for 1-5 minutes; closing the nitrogen and stabilizing for 1-5 minutes; introducing dichloroethylene, and stabilizing for 1-5 minutes;
s4: heating to 950 ℃, and stabilizing for 10-30 minutes;
s5: closing the dichloroethylene, and stabilizing for 1-5 minutes;
and S6, heating to 1200-1325 ℃.
2. The high temperature ethylene dichloride cleaning process of claim 1, wherein: in the step S1, the temperature rise rate is 5-10 ℃ per minute from 750 ℃ to 800 ℃.
3. The high temperature ethylene dichloride cleaning process of claim 1, wherein: in step S3, the gas ratio is: oxygen: nitrogen is 1: 3.
4. The high temperature ethylene dichloride cleaning process of any one of claims 1 to 3, wherein: in step S3, the oxygen gas is supplied at a flow rate of 5SLPM to 10SLPM and at a flow rate of 5 SLPM.
5. The high temperature ethylene dichloride cleaning process of any one of claims 1 to 3, wherein: in step S3, the flow rate of dichloroethylene is 100-1000SCCM, and the opening rate is 100-1000 SCCM.
6. The high temperature ethylene dichloride cleaning process of any one of claims 1 to 3, wherein: in the step S4, the temperature rise rate is 5-10 ℃ per minute from 800 ℃ to 950 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110082919.XA CN112893337A (en) | 2021-01-21 | 2021-01-21 | High-temperature ethylene dichloride oxide cleaning process for wafer processing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110082919.XA CN112893337A (en) | 2021-01-21 | 2021-01-21 | High-temperature ethylene dichloride oxide cleaning process for wafer processing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112893337A true CN112893337A (en) | 2021-06-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202110082919.XA Withdrawn CN112893337A (en) | 2021-01-21 | 2021-01-21 | High-temperature ethylene dichloride oxide cleaning process for wafer processing |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102825036A (en) * | 2012-08-23 | 2012-12-19 | 英利能源（中国）有限公司 | Cleaning method for furnace tube for diffusion |
| CN103372559A (en) * | 2012-04-24 | 2013-10-30 | 无锡华润上华科技有限公司 | Cleaning method for furnace tube |
| CN104259153A (en) * | 2014-07-24 | 2015-01-07 | 上海华力微电子有限公司 | Furnace tube cleaning process |
-
2021
- 2021-01-21 CN CN202110082919.XA patent/CN112893337A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103372559A (en) * | 2012-04-24 | 2013-10-30 | 无锡华润上华科技有限公司 | Cleaning method for furnace tube |
| CN102825036A (en) * | 2012-08-23 | 2012-12-19 | 英利能源（中国）有限公司 | Cleaning method for furnace tube for diffusion |
| CN104259153A (en) * | 2014-07-24 | 2015-01-07 | 上海华力微电子有限公司 | Furnace tube cleaning process |
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Application publication date: 20210604 |
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| WW01 | Invention patent application withdrawn after publication |