CN112885910A - Thin-film solar cell on linear substrate and preparation method thereof - Google Patents
Thin-film solar cell on linear substrate and preparation method thereof Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 61
- 239000010409 thin film Substances 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 32
- 238000000151 deposition Methods 0.000 claims abstract description 23
- 229910052786 argon Inorganic materials 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims abstract description 16
- 238000004544 sputter deposition Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000007747 plating Methods 0.000 claims abstract description 8
- 239000013077 target material Substances 0.000 claims abstract description 8
- 239000008367 deionised water Substances 0.000 claims abstract description 6
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 6
- 238000001035 drying Methods 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 238000005406 washing Methods 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 20
- 239000011787 zinc oxide Substances 0.000 claims description 10
- 229910001220 stainless steel Inorganic materials 0.000 claims description 9
- 239000010935 stainless steel Substances 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 6
- WILFBXOGIULNAF-UHFFFAOYSA-N copper sulfanylidenetin zinc Chemical compound [Sn]=S.[Zn].[Cu] WILFBXOGIULNAF-UHFFFAOYSA-N 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 description 17
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004753 textile Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- -1 purity 99.99%) Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
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Abstract
The invention provides a preparation method of a thin film solar cell on a linear substrate, which comprises the following steps: step S1, linear substrate pretreatment: firstly, cleaning a linear substrate by ultrasonic waves, then washing the linear substrate by deionized water and then drying the linear substrate; s2, placing the linear base material pretreated in the step S1 into a vacuum chamber of a magnetron sputtering film plating machine for film plating; and depositing a target on the pretreated linear substrate by controlling the flow of argon and the sputtering power in the sputtering process, and forming a layer of semiconductor film with controllable thickness on the linear substrate to form the thin-film solar cell on the linear substrate. The invention utilizes the magnetron sputtering technology to deposit the semiconductor target material on the linear substrate to form a film on the linear substrate, and the film solar cell on the prepared linear substrate has better coating uniformity, stability, repeatability, good photoelectric property and controllable thickness.
Description
Technical Field
The invention relates to the technical field of crossing of spinning and physics, in particular to a thin-film solar cell on a linear substrate and a preparation method thereof.
Background
With the development of artificial intelligence technology and the transformation of textile industry, people have increasingly increased demands on wearable equipment. Functional textiles have attracted considerable attention due to their good flexibility, portability and functionality. The photoelectric conversion fiber can convert light energy into electric energy and is used for manufacturing power supply systems of flexible wearable equipment, such as flexible health detection devices, wearable sensors, electronic equipment of intelligent clothes and the like. The traditional photovoltaic conversion device has the characteristics of large volume, high cost and rare materials, and part of raw materials have toxicity, so that the development of a low-cost, environment-friendly and soft photoelectric linear element has important significance for reducing the volume of the device, improving the shape flexibility of the device, improving the aesthetic feeling and the practicability and promoting the development and industrialization of intelligent textiles.
Disclosure of Invention
The invention aims to provide a thin film solar cell on a linear substrate and a preparation method thereof.
The invention provides a preparation method of a thin film solar cell on a linear substrate, which comprises the following steps:
step S1, linear substrate pretreatment: firstly, cleaning a linear substrate by ultrasonic waves, then washing the linear substrate by deionized water and then drying the linear substrate;
s2, placing the linear base material pretreated in the step S1 into a vacuum chamber of a magnetron sputtering film plating machine for film plating; and depositing a target on the pretreated linear substrate by controlling the flow of argon and the sputtering power in the sputtering process, and forming a layer of semiconductor film with controllable thickness on the linear substrate to form the thin-film solar cell on the linear substrate.
In the preparation method provided by the invention, in step S2, the sputtering vacuum chamber is vacuumized to make the background vacuum degree reach 5 x 10-3～5×10-4Pa; the target base distance was set to 10 cm.
In the preparation method provided by the invention, the diameter of the target is 60mm, the thickness of the target is 5mm, and the target is selected from one of the following targets: titanium, molybdenum, copper zinc tin sulfur, cadmium sulfide, zinc oxide, aluminum-doped zinc oxide and silver.
In the preparation method provided by the invention, the linear base material is a stainless steel filament, a molybdenum filament or a quartz filament and the like, and the diameter of the linear base material is 0.1-3 mm.
In the preparation method provided by the invention, when sputtering is performed in step S2, the flow rate of argon gas is 100-400sccm, and the deposition power is 100-250W.
According to another aspect of the invention, a linear substrate-on-thin film solar cell prepared by the preparation method is also provided.
The embodiment of the invention has the following beneficial effects: according to the preparation method of the thin-film solar cell on the linear substrate, provided by the invention, the semiconductor target material is deposited on the linear substrate by utilizing the magnetron sputtering technology, and the thin film is formed on the linear substrate, so that the thin-film solar cell on the linear substrate has the advantages of better coating uniformity, stability, repeatability, good photoelectric property and controllable thickness.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a flowchart of a method for manufacturing a thin film solar cell on a linear substrate according to an embodiment of the present invention;
FIG. 2 shows the I-V curve of a thin film solar cell on a linear substrate prepared with stainless steel filaments as the substrate;
FIG. 3 shows I-V curves of thin film solar cells on linear substrates prepared with quartz filaments as substrates.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a flowchart of a method for manufacturing a thin film solar cell on a linear substrate according to an embodiment of the present invention. As shown in fig. 1, the method comprises the steps of:
step S1, linear substrate pretreatment: firstly, cleaning a linear substrate by ultrasonic waves, then washing the linear substrate by deionized water and then drying the linear substrate; the linear base material is stainless steel filament, molybdenum filament or quartz filament, etc. and has a diameter of 0.1-3 mm.
Step S2, placing the linear base material pretreated in the step S1 into a vacuum chamber of a magnetron sputtering film plating machine for film plating; and depositing a target on the pretreated filament by controlling the argon flow and the sputtering power in the sputtering process, and forming a layer of semiconductor film with controllable thickness on the linear substrate to form the thin-film solar cell on the linear substrate.
In step S2, the sputtering vacuum chamber is evacuated to a background vacuum of 5X 10-3～5×10-4Pa; the target base distance was set to 10 cm. The diameter of the target material is 60mm, and the thickness of the target material is 5 mm. In step S2, the flow rate of argon gas is 100-400sccm, and the deposition power is 100-250W. Target material for sputtering: titanium (Ti, purity 99.99%), molybdenum (Mo, purity 99.99%), copper-zinc-tin-sulfur (Cu)2ZnSnS4Purity 99.99%), cadmium sulfide (CdS, purity 99.99%), zinc oxide (ZnO, purity 99.99%), aluminum-doped zinc oxide (AZO, purity 99.99%), silver (Ag, purity 99.99%), and the like.
Example 1
Linear substrate pretreatment: putting stainless steel filaments (1.5mm) into a 3:1 mixed solution of acetone and ethanol, treating for 30min under the condition of ultrasonic waves to remove impurities such as organic solvents, dust and the like on the surface of the linear base material, repeatedly washing the linear base material with deionized water, and then putting the linear base material into an oven at 40-45 ℃ for drying.
Magnetron sputtering coating: to the evaporation chamberVacuumizing to make the background vacuum reach 5X 10-3Pa; setting the target base distance to be 10 cm; sputtering a target material: molybdenum, the flow of the deposition argon is 200sccm, and the deposition power is 100W; copper-zinc-tin-sulfur, wherein the flow of deposited argon is 300sccm, and the deposition power is 200W; cadmium sulfide, wherein the flow rate of deposited argon is 100sccm, and the deposition power is 100W; zinc oxide, wherein the flow of deposited argon is 200sccm, the flow of deposited oxygen is 50sccm, and the deposition power is 100W; AZO, the flow rate of the deposition gas is 150sccm, and the deposition power is 100W. And depositing different functional film layers on the surface of the stainless steel filament by adopting a magnetron sputtering technology to form the thin-film solar cell.
Example 2
Linear substrate pretreatment: putting quartz filaments (1.5mm) into a 3:1 mixed solution of acetone and ethanol, treating for 30min under the condition of ultrasonic waves to remove impurities such as organic solvents, dust and the like on the surface of the linear substrate, repeatedly washing the linear substrate with deionized water, and then putting the linear substrate into an oven at 40-45 ℃ for drying.
Magnetron sputtering coating: the evaporation chamber is vacuumized to make the background vacuum reach 5 x 10-3Pa; setting the target base distance to be 10 cm; sputtering a target material: titanium, the flow of the deposition argon is 300sccm, and the power is 100W; molybdenum, the flow of the deposition argon is 200sccm, and the deposition power is 100W; copper-zinc-tin-sulfur, wherein the flow of deposited argon is 300sccm, and the deposition power is 200W; cadmium sulfide, wherein the flow rate of deposited argon is 100sccm, and the deposition power is 100W; zinc oxide, wherein the flow of deposited argon is 200sccm, the flow of deposited oxygen is 50sccm, and the deposition power is 100W; AZO, the flow rate of the deposition gas is 150sccm, and the deposition power is 100W. And depositing different functional film layers on the surface of the stainless steel filament by adopting a magnetron sputtering technology to form the thin-film solar cell.
The I-V curves of the thin film solar cells on the linear substrates prepared in the above two examples are shown in fig. 2 and 3. As can be seen from the graph, the open circuit voltage of the thin film solar cell on the linear substrate using the stainless steel filament as the substrate was 256mV, and the short circuit current was 1.27mA/cm2(ii) a The open-circuit voltage of the thin-film solar cell on the linear substrate taking the quartz filament as the substrate is 86.5mV, and the short-circuit current is 0.51mA/cm2。
According to the method for preparing the thin-film solar cell on the linear substrate, provided by the invention, the copper-zinc-tin-sulfur and the zinc oxide are deposited on the stainless steel filament by utilizing the magnetron sputtering technology to form a thin film on the filament, so that the thin-film solar cell on the linear substrate with good photoelectric property can be obtained.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (6)
1. A method for preparing a thin film solar cell on a linear substrate is characterized by comprising the following steps:
step S1, linear substrate pretreatment: firstly, cleaning a linear substrate by ultrasonic waves, then washing the linear substrate by deionized water and then drying the linear substrate;
s2, placing the linear base material pretreated in the step S1 into a vacuum chamber of a magnetron sputtering film plating machine for film plating; and depositing a target on the pretreated linear substrate by controlling the flow of argon and the sputtering power in the sputtering process, and forming a layer of semiconductor film with controllable thickness on the linear substrate to form the thin-film solar cell on the linear substrate.
2. The method of claim 1, wherein in step S2, the sputtering vacuum chamber is evacuated to a background vacuum level of 5 x 10-3～5×10-4Pa; the target base distance was set to 10 cm.
3. The method according to claim 1, wherein the target material has a diameter of 60mm and a thickness of 5mm, and is selected from one of the following targets: titanium, molybdenum, copper zinc tin sulfur, cadmium sulfide, zinc oxide, aluminum-doped zinc oxide and silver.
4. The method according to claim 1, wherein the linear substrate is a stainless steel filament, a molybdenum filament or a quartz filament having a diameter of 0.1mm to 3 mm.
5. The method as claimed in claim 1, wherein the flow rate of argon is 100-.
6. A thin film solar cell on a linear substrate prepared by the preparation method according to any one of claims 1 to 5.
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| CN202110111884.8A CN112885910A (en) | 2021-01-27 | 2021-01-27 | Thin-film solar cell on linear substrate and preparation method thereof |
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| CN202110111884.8A CN112885910A (en) | 2021-01-27 | 2021-01-27 | Thin-film solar cell on linear substrate and preparation method thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201017896A (en) * | 2008-10-22 | 2010-05-01 | Chun-Chu Yang | Methods for continuous fabrication of linear coaxial solar cell |
| CN102779895A (en) * | 2011-05-13 | 2012-11-14 | 江伦 | Solar cell and producing method thereof, photoelectric photo-thermal vacuum tube and receiver thereof |
| CN104009105A (en) * | 2014-06-11 | 2014-08-27 | 复旦大学 | Linear perovskite solar cell and preparation method thereof |
| CN104465842A (en) * | 2014-12-18 | 2015-03-25 | 广西大学 | Linear bendable solar cell and preparation method thereof |
-
2021
- 2021-01-27 CN CN202110111884.8A patent/CN112885910A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201017896A (en) * | 2008-10-22 | 2010-05-01 | Chun-Chu Yang | Methods for continuous fabrication of linear coaxial solar cell |
| CN102779895A (en) * | 2011-05-13 | 2012-11-14 | 江伦 | Solar cell and producing method thereof, photoelectric photo-thermal vacuum tube and receiver thereof |
| CN104009105A (en) * | 2014-06-11 | 2014-08-27 | 复旦大学 | Linear perovskite solar cell and preparation method thereof |
| CN104465842A (en) * | 2014-12-18 | 2015-03-25 | 广西大学 | Linear bendable solar cell and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| PATRICE BRAS: ""Influence of hydrogen sufide annealing on copper–zinc–tin–sufide solar cells sputtered from a quaternary compound target"", 《THIN SOLID FILMS》, pages 233 - 238 * |
| SLAWOMIR GULKOWSKI: ""RF/DC Magnetron Sputtering Deposition of Thin Layers for Solar Cell Fabrication"", 《COATINGS》, pages 1 - 14 * |
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