CN112882152A - Optical fiber panel based on silicon micro-channel array and preparation method thereof - Google Patents
Optical fiber panel based on silicon micro-channel array and preparation method thereof Download PDFInfo
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- CN112882152A CN112882152A CN202110046907.1A CN202110046907A CN112882152A CN 112882152 A CN112882152 A CN 112882152A CN 202110046907 A CN202110046907 A CN 202110046907A CN 112882152 A CN112882152 A CN 112882152A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 90
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 89
- 239000010703 silicon Substances 0.000 title claims abstract description 89
- 239000013307 optical fiber Substances 0.000 title claims abstract description 37
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000000835 fiber Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 10
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 6
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 6
- 239000002210 silicon-based material Substances 0.000 claims abstract description 5
- 238000002310 reflectometry Methods 0.000 claims abstract description 4
- 239000005304 optical glass Substances 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 10
- 238000007493 shaping process Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 8
- 239000007787 solid Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 5
- 238000003384 imaging method Methods 0.000 abstract description 3
- 238000005459 micromachining Methods 0.000 abstract description 2
- 239000011148 porous material Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
- 239000011162 core material Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/04—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres
- G02B6/06—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres the relative position of the fibres being the same at both ends, e.g. for transporting images
- G02B6/08—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres the relative position of the fibres being the same at both ends, e.g. for transporting images with fibre bundle in form of plate
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
Abstract
An optical fiber panel based on silicon micro-channel array and a preparation method thereof relate to the technical field of silicon micro-machining and photoelectric imaging, and the optical fiber panel comprises: the pore diameter of the silicon micro-channel array is 1-10 microns, the array arrangement mode is square arrangement, and the section of the channel is square or octagonal; the reflecting layer is prepared on the side surface in the silicon microchannel array and is made of metal or silicon dioxide with high reflectivity; and the filling medium is filled in the space formed by the reflecting layer, and the thermal expansion coefficient of the filling medium is close to that of silicon. The invention can prepare the silicon micro-through array structure with the aperture as small as 1 micron, improves the resolution of the optical fiber panel and solves the problem of matching with an image sensor; silicon materials are arranged among fibers in the optical fiber panel, so that the problem of optical crosstalk in the traditional optical fiber panel is completely solved; the directions of the channels are all the crystal directions of [100], the apertures of the channels are uniform and consistent, and the distortion problem in the traditional optical fiber panel process can not be caused.
Description
Technical Field
The invention relates to the technical field of silicon micromachining and photoelectric imaging, in particular to an optical fiber panel based on a silicon micro-channel array and a preparation method thereof.
Background
The optical fiber panel (optical fiber panel for short) is formed by regularly arranging tens of millions of optical fibers, has the characteristics of high numerical aperture, small interstage coupling loss, high resolution, zero optical thickness and the like, can transmit high-definition images without distortion, and is widely applied to low-light-level image intensifiers, high-brightness high-definition displays, photoelectric coupling devices (CCD, CMOS) and other high-definition image receiving, transmitting and coupling instruments and equipment.
The resolution is an important parameter of the optical fiber panel, the resolution is mainly determined by the aperture of a single fiber, the smaller the aperture is, the higher the resolution is, and the traditional optical fiber panel drawing process is particularly difficult to prepare the small-aperture optical fiber, and the current domestic minimum aperture mentioned in the Chinese patent application No. 201120531389.4 is 4 microns. The fiber arrangement mode of the traditional optical fiber panel is a hexagonal close-packed structure, and the structure is different from the arrangement mode of pixel points of image sensors such as a CCD (charge coupled device), a CMOS (complementary metal oxide semiconductor) and the like, so that the Moire effect is easy to occur, and the application of the fiber in the field of digital imaging is influenced.
In the traditional process, the core material and the cladding material can diffuse mutually in the heat treatment processes such as drawing, fusion pressing and the like, so that optical crosstalk is caused, and the resolution is reduced. In the chinese patent application No. 201010238439.X, when a large-area optical fiber panel is prepared, the radial temperature difference may increase during the fusion-pressing process, which may cause the fiber in the central portion not to be well fused and the core sheath of the peripheral fiber to diffuse, which may seriously affect the quality of the optical fiber panel. Chinese patent application No. 201810380549.6 states that magnification distortion may also occur during the fusion process. The conventional drawing process also produces serpentine distortion, which degrades the image quality.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a silicon micro-channel array-based optical fiber panel and a preparation method thereof, and solves the problems that the aperture of the optical fiber panel is difficult to reduce, the resolution cannot be greatly improved, and the optical fiber panel is not matched with image sensors such as a CCD (charge coupled device), a CMOS (complementary metal oxide semiconductor) and the like because the fiber arrangement mode of the traditional optical fiber panel is hexagonal close-packed arrangement.
The technical scheme adopted by the invention for solving the technical problem is as follows:
a fiber optic faceplate based on a silicon micro-tunnel array, the fiber optic faceplate comprising:
the silicon microchannel array has the aperture of 1-10 microns, the array arrangement mode is square arrangement, the cross section of the channel is square or octagonal, and the lengths of two mutually perpendicular lines passing through the center of the cross section are equal;
the reflecting layer is prepared on the side surface in the silicon microchannel array and is made of metal or silicon dioxide with high reflectivity;
a filling medium filled in the space formed by the reflecting layer and having a coefficient of thermal expansion less than 100 (10) at 0-1000 deg.C-7/K)。
Preferably, the length-diameter ratio of the silicon microchannel array is 10-500, and the diameter of the plate surface is 25-150 mm.
Preferably, the crystal orientation of the silicon material of the silicon microchannel array is [100 ].
Preferably, the material of the reflecting layer is aluminum, silver, gold or platinum.
Preferably, the thickness of the reflective layer is 20 to 500 nm.
Preferably, when the reflective layer is silicon dioxide, the refractive index of the filling medium is greater than that of silicon dioxide.
Preferably, the material of the filling medium is optical glass.
A preparation method of an optical fiber panel based on a silicon micro-channel array comprises the following steps:
the method comprises the following steps: photoetching, corroding, oxidizing, back thinning and channel shaping are carried out on a silicon substrate with the crystal orientation of [100] to prepare a silicon micro-channel array structure;
step two: oxidizing the silicon micro-channel array at high temperature, wherein a silicon dioxide layer is formed on the inner wall of the channel and serves as a reflecting layer, the oxidizing temperature is 900 ℃ and 1100 ℃, and the thickness of the oxidizing layer is 50-500 nanometers;
step three: placing a silicon micro-channel array with an inner wall reflecting layer into a sapphire crucible in a vacuum tube furnace, and placing solid optical glass on the silicon micro-channel array; vacuumizing and heating a vacuum tube furnace, wherein the heating temperature is higher than the softening point temperature of the solid optical glass; closing the vacuumizing mode, opening a high-purity nitrogen bottle to charge the vacuum tube furnace, and filling the molten solid optical glass into the micro-channels of the silicon micro-channel array under the action of pressure to form glass media filled in the channels; and finally, grinding and polishing the surface to finish the preparation method of the optical fiber panel based on the silicon micro-channel array.
Preferably, in the channel shaping process in the first step, the etching solution is a tetramethylammonium hydroxide solution, the concentration of the solution is 0.5-5 wt%, the etching temperature is 5-50 ℃, the wall thickness of the etched silicon microchannel is less than 1 micron, and the ratio of the opening area of the channel is more than 80%.
Preferably, the second step is replaced by preparing the metal reflecting layer by an atomic layer deposition method, and the thickness of the metal reflecting layer is 20-100 nanometers.
Preferably, the filling vacuum degree in the third step is better than 10Pa, and the filling temperature is 500-1000 ℃.
The invention has the beneficial effects that:
1. the invention can prepare the silicon micro-through array structure with the aperture as small as 1 micron, the arrangement mode of the channels is tetragonal arrangement, the resolution ratio of the optical fiber panel is improved, and the problem of matching with an image sensor is solved;
2. the silicon material is arranged among fibers in the optical fiber panel prepared by the invention, so that the problem of optical crosstalk in the traditional optical fiber panel is completely solved;
3. the invention can ensure that all the channels of the optical fiber panel are in the silicon (100) crystal direction, the aperture of the channels is uniform and consistent, and the distortion problem in the traditional optical fiber panel process can not be generated;
4. according to the invention, the medium is filled in the channel through a vacuum hot melting filling process, the expansion coefficient of the filled medium is close to that of silicon, the air tightness can be ensured, and the light and thin optical fiber panel applicable to the ultra-high vacuum technical field can be prepared.
Drawings
FIG. 1 is a scanning electron microscope photograph of a silicon microchannel array according to the present invention with tetragonal arrangement of channels;
FIG. 2 is a cross-sectional view of a fiber optic faceplate of the silicon microchannel array of the present invention;
FIG. 3 is a schematic view of a fiber optic faceplate of the silicon microchannel array of the present invention;
fig. 4 is a schematic view of a vacuum hot melt medium filling device according to the present invention.
In the figure: 1. the device comprises a silicon microchannel array, 2, a reflecting layer, 3, a filling medium, 4, a high-purity nitrogen cylinder, 5, a valve, 6, a vacuum pump, 7, a vacuum tube furnace and 8, and a sapphire crucible.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
A fiber optic faceplate based on a silicon micro-tunnel array, the fiber optic faceplate comprising:
as shown in fig. 1, the silicon micro-channel array 1 is arranged in a square manner, i.e., the channel array is arranged in a square manner. The aperture of the silicon micro-channel array 1 is 1-10 microns, and the cross section of the channel is square; in this embodiment, the aperture of the silicon micro-channel array 1 is 5.5 and 2.5 microns, respectively, the area of the prepared silicon micro-channel array 1 is determined by the area of a silicon wafer, wherein the size and the arrangement mode of the channels are determined by a mask pattern in a photoetching process, and a square arrangement structure which is the same as a CCD or CMOS pixel point can be prepared. The silicon micro-channel array is prepared from a silicon material with a crystal direction along [100], visible light cannot penetrate through the silicon micro-channel array, and optical crosstalk is avoided. The aperture of the channel is uniform, and image distortion does not exist. The length-diameter ratio of the silicon micro-channel array 1 is 10-500, and the diameter of the plate surface is 25-150 mm.
A reflective layer 2, as shown in fig. 2, the reflective layer 2 is prepared on the side surface in the silicon microchannel array 1, and the material is metal or silicon dioxide with high reflectivity; when the reflective layer 2 is silicon dioxide, the reflective layer 2 may be prepared by a thermal oxidation process; when the reflecting layer 2 is made of metal, the reflecting layer 2 made of metal materials including aluminum, silver, gold, platinum and the like is prepared on the inner wall of the micro-channel by an atomic layer deposition technology, wherein the thickness of the reflecting layer 2 is 20-500 nanometers.
Filling mediumA filler 3, wherein the filler 3 is filled in the space formed by the reflecting layer 2, and the coefficient of thermal expansion of the filler 3 is less than 100 (10) at 0-1000 deg.C-7K) is added. When the material of the reflecting layer 2 is silicon dioxide, the refractive index of the filling medium 3 is greater than that of the silicon dioxide; when the reflecting layer is made of metal, the refractive index of the filling medium 3 does not need to be considered, the thermal expansion coefficient of the filling medium 3 is close to that of silicon, the air tightness can be ensured, and the light and thin optical fiber panel suitable for the application in the technical field of ultrahigh vacuum can be prepared. In the embodiment, the filling medium 3 is made of optical glass, and the models are H-LaF4GT, H-BaK7GT and H-KLGT.
Two examples of the preparation are given below:
example 1:
a preparation method of an optical fiber panel based on a silicon micro-channel array comprises the following steps:
the method comprises the following steps: carrying out photoetching, corrosion, oxidation, back thinning and channel shaping on a silicon substrate with the crystal orientation of [100] to prepare a silicon micro-channel array structure 1; and (3) corroding the micro-channels by adopting a shaping process of the silicon micro-channel array 1 to obtain square channels arranged in a square manner, enlarging the size of the channels and reducing the wall thickness. The etching solution used in the silicon substrate shaping process for preparing the silicon microchannel array 1 is a tetramethylammonium hydroxide solution, the concentration of the etching solution is 1 wt%, and the temperature of the etching solution is 40 ℃. The silicon substrate surface diameter of the silicon micro-channel array 1 is 25mm, the thickness is 350 microns, the micro-channel period is 6 microns, and the side length of the square-hole channel is 5.5 microns.
Step two: placing the silicon microchannel array 1 in high temperature for oxidation for 2 hours, wherein a silicon dioxide layer is formed on the inner wall of the channel and is used as a reflecting layer 2, the oxidation temperature is 1100 ℃, and the thickness of the oxidation layer is 50 nanometers;
step three: placing a silicon micro-channel array 1 with a silicon dioxide reflecting layer 2 on the inner wall into a sapphire crucible 8 in a vacuum tube furnace 7, and placing H-LaF4GT optical glass on the silicon micro-channel array 1; vacuumizing and heating the vacuum tube furnace 7, wherein the heating temperature is higher than the softening point temperature of the solid optical glass, the temperature is 750 ℃, the temperature is kept for 10 minutes, and the vacuum degree is better than 10 Pa; : closing the vacuum pump 6, opening the valve 5, inflating the vacuum tube furnace 7 by high-purity nitrogen 4, naturally cooling the vacuum tube furnace 7, and filling the molten H-LaF4GT optical glass into the micro-channel of the silicon micro-channel array 1 with the inner wall reflection layer under the pressure action to form a glass medium filled in the channel; and finally, grinding and polishing the surface to finish the preparation method of the optical fiber panel based on the silicon micro-channel array.
Example 2
A preparation method of an optical fiber panel based on a silicon micro-channel array comprises the following steps:
the method comprises the following steps: carrying out photoetching, corrosion, oxidation, back thinning and channel shaping on a silicon substrate with the crystal orientation of [100] to prepare a silicon micro-channel array structure 1; and (3) corroding the micro-channels by adopting a shaping process of the silicon micro-channel array 1 to obtain square channels arranged in a square manner, enlarging the size of the channels and reducing the wall thickness. The etching solution used in the silicon substrate shaping process for preparing the silicon microchannel array 1 is a tetramethylammonium hydroxide solution, the concentration of the etching solution is 1 wt%, and the temperature of the etching solution is 40 ℃. The silicon substrate surface diameter of the silicon micro-channel array 1 is 100mm, the thickness is 300 microns, the micro-channel period is 3 microns, and the side length of the square-hole channel is 2.5 microns.
Step two: depositing the silicon micro-channel array 1 by an atomic layer, and preparing a silver film on the inner wall of the channel to be used as a reflecting layer 2, wherein the thickness of the silver film is 500 nanometers;
step three: placing a silicon micro-channel array 1 with a silver film on the inner wall into a sapphire crucible 8 in a vacuum tube furnace 7, and placing H-BaK7GT optical glass on the silicon micro-channel array 1; vacuumizing and heating the vacuum tube furnace 7, wherein the heating temperature is higher than the softening point temperature of the solid optical glass; maintaining at 780 ℃ for 10 minutes, and ensuring that the vacuum degree is better than 1 Pa;
step four: closing the vacuum pump 6, opening the valve 5, charging the vacuum tube furnace 7 with high-purity nitrogen 4, naturally cooling the vacuum tube furnace 7, and filling the molten H-BaK7GT optical glass into the micro-channels of the silicon micro-channel array 1 with the inner wall reflecting layer under the pressure action to form glass media filled in the channels; and finally, grinding and polishing the surface to finish the preparation method of the optical fiber panel based on the silicon micro-channel array.
Claims (10)
1. A fiber optic faceplate based on a silicon microchannel array, the fiber optic faceplate comprising:
the silicon microchannel array has the aperture of 1-10 microns, the array arrangement mode is square arrangement, the cross section of the channel is square or octagonal, and the lengths of two mutually perpendicular lines passing through the center of the cross section are equal;
the reflecting layer is prepared on the side surface in the silicon microchannel array and is made of metal or silicon dioxide with high reflectivity;
a filling medium filled in the space formed by the reflecting layer and having a coefficient of thermal expansion less than 100 (10) at 0-1000 deg.C-7/K)。
2. The fiber optic faceplate based on silicon microchannel array of claim 1, wherein the silicon microchannel array has an aspect ratio of 10-500 and a diameter of 25-150 mm.
3. The fiber optic faceplate based on silicon microchannel array of claim 1, wherein the silicon material of the silicon microchannel array has a crystal orientation [100 ].
4. The fiber optic faceplate based on silicon microchannel array of claim 1, wherein the material of the reflective layer is aluminum, silver, gold, platinum.
5. The fiber optic faceplate based on silicon micro-channel array of claim 1, wherein the thickness of the reflective layer is 20-500 nm.
6. The silicon micro-tunnel array-based fiber optic faceplate of claim 1, wherein when said reflective layer is silicon dioxide, the refractive index of said filling medium is greater than that of silicon dioxide.
7. The fiber optic faceplate based on silicon micro-channel array of claim 1, wherein the material of the filling medium is optical glass.
8. The method for preparing the optical fiber panel based on the silicon micro-channel array according to any one of claims 1 to 7, wherein the method comprises the following steps:
the method comprises the following steps: photoetching, corroding, oxidizing, back thinning and channel shaping are carried out on a silicon substrate with the crystal orientation of [100] to prepare a silicon micro-channel array structure;
step two: oxidizing the silicon micro-channel array at high temperature, wherein a silicon dioxide layer is formed on the inner wall of the channel and serves as a reflecting layer, the oxidizing temperature is 900 ℃ and 1100 ℃, and the thickness of the oxidizing layer is 50-500 nanometers;
step three: placing a silicon micro-channel array with an inner wall reflecting layer into a sapphire crucible in a vacuum tube furnace, and placing solid optical glass on the silicon micro-channel array; vacuumizing and heating a vacuum tube furnace, wherein the heating temperature is higher than the softening point temperature of the solid optical glass; closing the vacuumizing mode, opening a high-purity nitrogen bottle to charge the vacuum tube furnace, and filling the molten solid optical glass into the micro-channels of the silicon micro-channel array under the action of pressure to form glass media filled in the channels; and finally, grinding and polishing the surface to finish the preparation method of the optical fiber panel based on the silicon micro-channel array.
9. The preparation method according to claim 8, wherein in the channel shaping process in the first step, the etching solution is tetramethylammonium hydroxide solution, the solution concentration is 0.5-5 wt%, the etching temperature is 5-50 ℃, the wall thickness of the etched silicon microchannel is less than 1 micron, and the ratio of the channel opening area is more than 80%.
10. The method according to claim 8, wherein the second step is replaced by preparing the metal reflective layer by an atomic layer deposition method, wherein the thickness of the metal reflective layer is 20-100 nm.
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