CN112865708A - Radio frequency broadband power amplifier based on grounded coplanar waveguide structure and design method - Google Patents
Radio frequency broadband power amplifier based on grounded coplanar waveguide structure and design method Download PDFInfo
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Abstract
The invention provides a radio frequency broadband power amplifier based on a grounded coplanar waveguide structure and a design method. The power amplifier comprises a micro-strip grounding coplanar waveguide module, a PCB substrate, a metal stratum and a heat dissipation module which are arranged from top to bottom. The micro-strip coplanar waveguide module comprises an improved grounding strip and a plurality of irregular non-array metalized through holes, wherein the grounding strip is changed along with the line width of a central conducting strip of the grounding coplanar waveguide, and the micro-strip coplanar waveguide module provides better EMI resistance than the traditional CPWG structure in a three-dimensional shielding effect; the metal ground layer and the heat dissipation module provide the shortest return path for the RF signal, and heat dissipation is increased. The invention also provides a method for designing the radio frequency broadband power amplifier with the coplanar waveguide structure, which can realize the broadband working range of at least 600MHz by utilizing the multi-section stepped impedance change transmission line, and the single-stage gain is more than 15 dB. The power amplifier has the advantages of simple structure, stable work, strong anti-electromagnetic interference capability, high repeatable utilization rate and multiple adaptive scenes.
Description
Technical Field
The invention relates to the field of radio frequency microwave, in particular to a radio frequency broadband power amplifier based on a grounded coplanar waveguide structure and a design method.
Background
A radio frequency power amplifier (RF PA) is an essential part of a radio frequency transmission system, and is also one of the most common technologies in a 5G mobile communication base station. In the front stage circuit of the transmitter, the radio frequency signal power generated by the modulation oscillation circuit is very small, and the radio frequency signal can be fed to the antenna to be radiated after sufficient radio frequency power is obtained through a series of amplification (buffer stage, intermediate stage and final stage). In order to obtain a sufficiently large radio frequency output power, a radio frequency power amplifier must be employed. After the modulator generates the RF signal, the RF modulated signal is amplified to sufficient power by the RF PA, passed through the matching network, and transmitted by the antenna.
The working frequency of the radio frequency power amplifier is usually above GHz, so that a large electromagnetic interference (EMI) problem can be generated, and in the design of the conventional radio frequency power amplifier, the transistor can generate self-excitation or deviate from a preset channel due to electromagnetic energy radiation of a microstrip transmission line. Moreover, the amplifier in a saturated operating state for a long time may cause the transistor to heat, and further, problems such as impedance mismatch, gain reduction, efficiency reduction, etc. may occur, and even a serious one may exceed the maximum temperature saving of the transistor to break down the device.
In the latest literature report, RongCabery et al at Tianjin university designs an S-band high-efficiency E-class GaN HEMT power amplifier, the saturation output power is 40.1dBm, and the saturation power gain is 11.1dB, but the radio frequency power amplifier only works at a single frequency point of 2.5GHz (RongCabery, Fu Hao, Qianfu. S-band high-efficiency E-class GaN HEMT power amplifier design [ J ]. Nankai university newspaper (Nature science edition), 2020,53(04): 32-36.); the continuous class-F power amplifier based on CGH40010F designed by large-school-pass light of large-connected oceans reaches a bandwidth of 1GHz, but the actual power is only 39.5dBm, and the output power is lower (the continuous class-F power amplifier based on CGH40010F is simulated and designed [ J ] modern electronic technology, 2020,43(16):26-29+ 33.). Both adopt the traditional microstrip transmission line mode, and radio frequency signal has taken place the radiation in space and has interfered with each other, does not carry out electromagnetic shield coupling with the ground strip, leads to partial energy loss, and the power descends.
In view of the above, a series of difficulties for realizing stable operation of the rf power amplifier and greatly reducing signal radiation and heat generation thereof become a problem to be solved by those skilled in the art.
Disclosure of Invention
The invention aims to provide a radio frequency broadband power amplifier based on a grounded coplanar waveguide structure, which utilizes the grounded coplanar waveguide (CPWG) structure to increase the three-dimensional electromagnetic shielding effect of a circuit, realizes Faraday shielding and ground eddy current through a plurality of irregular metalized through holes on a CPWG grounding band and avoids forming a resonance cavity.
The purpose of the invention is realized by at least one of the following technical solutions.
A radio frequency broadband power amplifier based on a coplanar waveguide structure, comprising: the microstrip grounding coplanar waveguide module, the PCB substrate, the metal stratum and the heat dissipation module are arranged from top to bottom;
the microstrip grounding coplanar waveguide module comprises an input matching network, an output matching network, a first biasing circuit, a second biasing circuit, a grounding coplanar waveguide, a transistor, a power interface, an input interface and an output interface;
the input interface, the input matching network, the transistor, the output matching network and the output interface are sequentially connected; one end of the first bias circuit is connected with the first end of the power interface, and the other end of the first bias circuit is connected to the connection position of the input matching network and the first end of the transistor; one end of the second bias circuit is connected with the second end of the power interface, and the other end of the second bias circuit is connected to the joint of the output matching network and the second end of the transistor; the grounding coplanar waveguide surrounds the input matching network, the output matching network, the first bias circuit and the second bias circuit at a certain interval on the top layer of the PCB substrate and is connected with the metal ground layer through a plurality of metalized through holes; and the third end of the power interface is connected with the grounding coplanar waveguide and is connected with the metal ground layer through a plurality of irregular non-array metallized through holes.
Further, the input matching network comprises: the first microstrip line, the second microstrip line, the third microstrip line, the fourth microstrip line, the fifth microstrip line, the sixth microstrip line, the first DC blocking capacitor, the first stabilizing resistor and the first stabilizing capacitor; the output matching network includes: the first microstrip line, the second microstrip line, the third microstrip line and the fourth microstrip line are connected in series;
the input interface, the first DC blocking capacitor, the first microstrip line, the second microstrip line, the third microstrip line, the fourth microstrip line, the fifth microstrip line, the sixth microstrip line, the transistor, the seventh microstrip line, the eighth microstrip line, the ninth microstrip line, the second DC blocking capacitor and the output interface are sequentially connected; the first stabilizing resistor and the first stabilizing capacitor are connected between the second microstrip line and the third microstrip line in parallel;
the first bias circuit includes: the filter circuit comprises a first filter capacitor, a second filter capacitor, a third filter capacitor, a fourth filter capacitor, a fifth filter capacitor, a first microstrip bias line and a second stabilizing resistor; the second bias circuit includes: a sixth filter capacitor, a seventh filter capacitor, an eighth filter capacitor, a ninth filter capacitor, a tenth filter capacitor, an eleventh filter capacitor, and a second microstrip bias line;
one end of the first microstrip bias line is connected with the first end of the power interface, the other end of the first microstrip bias line is connected with one end of the second stabilizing resistor, and the other end of the second stabilizing resistor is connected between the fourth microstrip line and the fifth microstrip line; two ends of the first filter capacitor, the second filter capacitor, the third filter capacitor, the fourth filter capacitor and the fifth filter capacitor are respectively bridged over the joint of the first microstrip bias line and the power interface and the grounded coplanar waveguide; one end of the second microstrip bias line is connected with the second end of the power interface, and the other end of the second microstrip bias line is connected between the seventh microstrip line and the eighth microstrip line; two ends of a sixth filter capacitor, a seventh filter capacitor, an eighth filter capacitor, a ninth filter capacitor, a tenth filter capacitor and an eleventh filter capacitor are respectively bridged on the joint of the second microstrip bias line and the power interface and the grounded coplanar waveguide.
Furthermore, the distance between the grounded coplanar waveguide and the ith microstrip line of the input matching network, the output matching network, the first bias circuit and the second bias circuit is LiThe linewidth of the ith microstrip line is wiThe line width and the spacing change of the central conduction band satisfy the relation:
1.5*wi≤Li≤3.0*wi；
the grounded coplanar waveguide on the top layer of the PCB substrate is provided with a plurality of irregular non-array metalized through holes, the distance between the through holes is 0 to lambda/20, and the arrangement area is all coplanar waveguide grounding strips of the top layer non-signal line routing.
Furthermore, the microstrip grounding coplanar waveguide module comprises an improved grounding belt and a plurality of irregular non-array metalized through holes, the grounding belt is changed along with the line width of the central conduction belt of the grounding coplanar waveguide, the grounding belt and the irregular non-array metalized through holes are printed on the top layer of the PCB substrate in a printed circuit board mode, the metal stratum is printed on the back layer of the PCB substrate in a printed circuit board mode, and the heat dissipation module is in good contact with the metal stratum and is tightly installed through screws.
Furthermore, the power interface is a 5-pin bent pin wiring terminal, wherein the first pin is a first end from any end of the power interface and is connected with the first microstrip offset line; the fourth needle and the fifth needle are second ends and are connected with the second microstrip offset line; the second pin and the third pin are third ends and are connected with the grounded coplanar waveguide.
Furthermore, the transistor is one of HEMT/JFET/LDMOS, the first end of the transistor is a grid electrode, the second end of the transistor is a drain electrode, the source electrode of the transistor is fixed to the heat dissipation module through two M2.5 screws, the working frequency of the transistor is 0-6GHz, and the packaging form is Flange;
the PCB substrate is a high-frequency microwave plate, the dielectric constant is 2-10, the thickness of the substrate is 4-60 mil, the grounding coplanar waveguide and the metal ground layer printed on the top layer and the back layer of the PCB substrate are electrolytic copper foils, the thickness of the copper foils is 17-70 mu m, and the surface treatment process is silver deposition.
Furthermore, the heat dissipation module is made of aluminum alloy, the length of the heat dissipation module is equal to that of the PCB substrate, the width of the heat dissipation module is equal to that of the PCB substrate, and the height of the heat dissipation module is 5mm to 15 mm; the top surface of the heat dissipation module is provided with a tooth hole and a transistor mounting groove which correspond to the PCB substrate, wherein the tooth hole is the same as the PCB substrate in position and size and is a through hole; the depth of the transistor mounting groove is H, the thickness of the transistor flange is H, and the relation is satisfied:
h is not more than copper cladding thickness, substrate thickness, H is not more than H +0.2 mm.
Furthermore, a plurality of rectangular welding spot arrays are arranged around any one or more of the first microstrip line, the second microstrip line, the third microstrip line, the fourth microstrip line, the fifth microstrip line, the sixth microstrip line, the seventh microstrip line, the eighth microstrip line and the ninth microstrip line and are used for impedance control and adjustment.
A design method of a radio frequency broadband power amplifier based on a grounded coplanar waveguide structure comprises the following steps:
s1, determining the type of a transistor according to a required working frequency band and output power, downloading Datasheet and acquiring parameters, wherein the method comprises the following steps: selecting an AB class static working point according to the drain electrode working voltage, the working frequency, the threshold voltage, the saturated output power, the maximum gain and the efficiency under the saturated output power; if the transistor is not matched and low-frequency oscillation occurs, adding an RC (resistor-capacitor) stabilizing network or a grid resistor, and utilizing radio frequency/microwave simulation software to enable a stability factor in a working frequency band to be larger than 1; if no low-frequency oscillation occurs, an RC stable network or a grid resistor does not need to be added;
s2, designing a first bias circuit and a second bias circuit, wherein the first bias circuit and the second bias circuit at least comprise a quarter-wavelength impedance transformation microstrip line and a plurality of filter capacitors, and selecting values of all elements when approaching the infinite impedance according to values of S11 and S22;
s3, designing an input and output matching network, selecting a matching route with a Q value smaller than 1.5 in a Smith chart, converting the well-drawn load impedance and source impedance to a standard 50 ohm through at least 3 sections of impedance-variable microstrip transmission lines, wherein the parameters of the impedance-variable microstrip transmission lines are influenced by a selected PCB substrate and working frequency, and selecting and calculating by using a Smith chart tool in radio frequency/microwave simulation software;
s4, simulating small signals and large signals, wherein the indexes of the large signal simulation are maximum output power Psat, PAE, P1dB, gain compression, harmonic distortion, ACPR and IMD3Generating a microstrip transmission line layout after the electromagnetic simulation meets the design requirement;
s5, calculating a grounding coplanar waveguide, drawing a metal grounding layer around the microstrip transmission line layout generated in the step S4, wherein the distance between the metal grounding layer and the microstrip transmission line is larger than 1.5 times of the line width of the microstrip transmission line at the position and smaller than 3 times of the line width of the microstrip transmission line at the position, a plurality of randomly arranged metallized through holes are arranged on the metal grounding layer, the distance between the through holes is 0 to lambda/20, and the metal grounding layer is connected with a full-coverage solid metal ground layer of the PCB substrate back layer through the through holes;
s6, layout is carried out according to the packaging sizes of the capacitors, the resistors and the interface elements, wherein the arrangement of the heating device and the strong radiation device follows the rule that: transmission line corners are greater than 90 °; the RF and IF routing should cross; ensuring the signal integrity of the formation; the RF output is far away from the RF input and is respectively positioned at the two ends of the PCB; the distance between the heating device, the strong radiation device and the power supply and the peripheral edge of the PCB is at least 20H, H refers to the distance between the device and the nearest reference GND layer, and the EMI can be effectively reduced by 90% according to the layout rule;
s7, designing a heat dissipation module, keeping the aperture and the position of each mechanical installation to be aligned with the PCB substrate, and forming an installation groove and a tooth hole at the corresponding position of the transistor for fixing the transistor; two tooth holes which are suitable for the packaging size of the microstrip SMA connector are respectively formed at the left side and the right side of the heat dissipation module and are used for fixing the radio frequency input connector and the radio frequency output connector;
and S8, welding components, installing a heat dissipation module and testing the power amplifier.
Further, in step S3, the parameters of the impedance-variable microstrip transmission line are selected according to the following rules:
s3.1, locking the characteristic impedance Z0；
S3.2, inputting the dielectric constant and the working center frequency of the PCB substrate;
s3.3, automatically calculating the length and the width of the microstrip transmission line by software;
s3.4, changing the characteristic impedance Z0；
And S3.5, repeating the steps S3.1 to S3.4 until the matching point is transformed into the centre point of the Smith chart, namely standard 50 ohms.
Compared with the prior art, the invention has the beneficial effects that:
1) when working at microwave and millimeter wave frequency, the invention provides a CPWG with smaller surface wave leakage and radiation loss, the distance between the CPWG grounding band and the central conduction band changes along with the line width, the isolation of adjacent channel signals is enhanced by the ground wire-signal wire-ground wire (GSG) layout, the improved distance rule between the CPWG structure and the radio frequency signal wire strictly controls the radiation distribution of an electromagnetic field to the space, a plurality of irregular non-array metallized through holes reduce the space eddy current, the three-dimensional shielding effect is greatly improved, and the crosstalk in a high-density circuit is reduced.
2) In the application of high-power circuits, the CPWG processes an additional metal grounding layer on the back surface of the substrate, and the metal grounding plate surface coated on the back surface of the additional metal grounding layer not only enhances the mechanical strength and the circuit stability of the substrate, but also provides a good heat dissipation medium for active devices.
3) The problem that the traditional radio frequency power amplifier transistor needs to be connected with a transmission line in a soldering tin mode is solved, and a debugging circuit of a technician is inconvenient to use in the traditional soldering tin contact mode. Since rf transistors are highly sensitive to static electricity and are highly vulnerable, the storage and operating conditions are very demanding. According to the invention, the grid electrode and the source electrode are contacted by adopting a PCB surface silver immersion process, and the transistor is fixed on the slotted heat dissipation module through the screw, so that the circuit debugging cost is saved, and the transistor installation mode is more flexible and controllable.
4) Compared with two-way bias of the traditional radio frequency power amplifier, the invention integrates the first bias circuit and the second bias circuit on one power interface, thereby reducing the circuit area and simplifying the circuit structure.
The invention can realize the bandwidth of at least 600MHz, and the single-stage gain is more than 15 dB. The radio frequency broadband power amplifier based on the grounded coplanar waveguide structure has the advantages of simple structure, stable work, strong anti-electromagnetic interference capability, no need of welding between a transistor and a circuit device, flexible installation and replacement mode, convenience for storing a static sensitive element, high repeatable utilization rate and multiple adaptive scenes.
Drawings
Fig. 1 is a side sectional view of a radio frequency broadband power amplifier based on a grounded coplanar waveguide structure in an embodiment of the present invention.
Fig. 2 is a block diagram of a grounded coplanar waveguide module in an embodiment of the invention.
Fig. 3 is a schematic circuit diagram in an embodiment of the invention.
Fig. 4 is a layout diagram of a PCB in an embodiment of the invention.
Fig. 5 is a block diagram of an rf power amplifier according to the prior art.
Fig. 6 is a simulated comparison graph of small signal gain of the rf broadband power amplifier based on the grounded coplanar waveguide structure and the conventional rf power amplifier according to the embodiment of the present invention.
Fig. 7 is a simulation comparison graph of large signal gain of the rf broadband power amplifier based on the grounded coplanar waveguide structure and the conventional rf power amplifier according to the embodiment of the present invention.
Fig. 8 is a comparison graph of the measured input return loss of the rf broadband power amplifier based on the grounded coplanar waveguide structure, the conventional rf power amplifier, and the commercial rf power amplifier in the embodiment of the present invention.
Fig. 9 is a comparison graph of the forward transmission coefficients of the rf wideband power amplifier based on the grounded coplanar waveguide structure, the conventional rf power amplifier, and the commercial rf power amplifier according to the embodiment of the present invention.
Detailed Description
The following detailed description of the preferred embodiments of the present invention is provided to enable those skilled in the art to more clearly understand the advantages and features of the present invention, and to clearly define the scope of the present invention. Obviously, a person skilled in the art can obtain the core ideas and advantages of the present invention through reading the description, and the application scenarios of the present invention are not limited to the embodiments in the description, and can be applied to different embodiments. In addition, other details of the present invention may be changed and replaced appropriately without departing from the spirit of the present invention, and any other embodiment without inventive step should fall within the scope of the present invention.
It is to be noted, however, that the drawings are designed solely for the purposes of illustration and not as a definition of the limits of the invention. For a better description of the embodiments, the drawings are generally given in a simplified form, and details and dimensions in the drawings are applicable to the embodiments only and do not represent specific proportions.
Example (b):
as shown in fig. 1, the rf wideband power amplifier based on the grounded coplanar waveguide structure provided by the present invention is divided into 4 layers from top to bottom, where the first layer is a microstrip grounded coplanar waveguide module 101, and is also a front printed circuit and each component mounting surface of a PCB substrate 102; the second layer of the PCB substrate 102 is a PCB dielectric material, in this embodiment, Rogers 4350B is selected, the dielectric constant is 3.48, and the loss factor is 0.0037@10 GHz; the third layer is a metal stratum 103 which can increase the GND area, ensure the signal integrity and reduce the ground wire impedance, and can form good conductor contact with the next layer of metal conductor to facilitate heat dissipation; the fourth layer is a heat dissipation module 104, in this embodiment, an aluminum alloy is selected, the thickness is 10mm, and the heat dissipation effect of the heating element is accelerated, so as to ensure a normal working temperature.
As shown in fig. 2, according to the design method of the rf wideband power amplifier based on the grounded coplanar waveguide structure, in the embodiment, the ground copper is applied to the areas around the input matching network 201, the output matching network 202, the first bias circuit 203 and the second bias circuit 204, so as to change the traditional signal transmission mode from the microstrip line transmission mode to the grounded coplanar waveguide transmission mode, enhance the shielding signal to the ground, and reduce the power amplifier working state abnormality caused by unnecessary crosstalk and radiation. It is worth noting that the problem that the traditional radio frequency power amplifier needs two paths of power supply bias with a relatively long interval is solved in the embodiment, generally, the first power supply interface of the traditional power amplifier is designed at the left edge of the PCB substrate 102, and the second power supply interface of the traditional power amplifier is designed at the right edge of the PCB substrate 102, so that the complexity of the circuit is increased. Based on the purpose of simplifying the circuit structure and enhancing the rationality of the layout, the first and second dc feed ports and the ground wire are integrated on one interface in this embodiment, so that the practicability of the rf power amplifier is enhanced.
As shown in fig. 3, the input matching network 201 includes: a first microstrip line 301, a second microstrip line 302, a third microstrip line 303, a fourth microstrip line 304, a fifth microstrip line 305, a sixth microstrip line 306, a first dc blocking capacitor 313, a first stabilizing resistor 311 and a first stabilizing capacitor 312; the output matching network 202 includes: a seventh microstrip line 307, an eighth microstrip line 308, a ninth microstrip line 309 and a second dc blocking capacitor 310;
the input interface 208, the first dc blocking capacitor 313, the first microstrip line 301, the second microstrip line 302, the third microstrip line 303, the fourth microstrip line 304, the fifth microstrip line 305, the sixth microstrip line 306, the transistor 206, the seventh microstrip line 307, the eighth microstrip line 308, the ninth microstrip line 309, the second dc blocking capacitor 310 and the output interface 209 are sequentially connected; the first stabilizing resistor 311 and the first stabilizing capacitor 312 are connected in parallel between the second microstrip line 302 and the third microstrip line 303;
the first bias circuit 203 includes: a first filter capacitor 314, a second filter capacitor 315, a third filter capacitor 316, a fourth filter capacitor 317, a fifth filter capacitor 318, a first microstrip bias line 319 and a second stabilizing resistor 320; the second bias circuit 204 includes: a sixth filter capacitor 321, a seventh filter capacitor 322, an eighth filter capacitor 323, a ninth filter capacitor 324, a tenth filter capacitor 325, an eleventh filter capacitor 326, and a second microstrip bias line 327;
one end of the first microstrip bias line 319 is connected to the first end of the power interface 207, the other end of the first microstrip bias line is connected to one end of the second stabilizing resistor 320, and the other end of the second stabilizing resistor 320 is connected between the fourth microstrip line 304 and the fifth microstrip line 305; two ends of the first filter capacitor 314, the second filter capacitor 315, the third filter capacitor 316, the fourth filter capacitor 317 and the fifth filter capacitor 318 are respectively connected across the connection of the first microstrip bias line 319 and the power interface 207 and the grounded coplanar waveguide 205; one end of the second microstrip bias line 327 is connected to the second end of the power interface 207, and the other end is connected between the seventh microstrip line 307 and the eighth microstrip line 308; two ends of the sixth filtering capacitor 321, the seventh filtering capacitor 322, the eighth filtering capacitor 323, the ninth filtering capacitor 324, the tenth filtering capacitor 325 and the eleventh filtering capacitor 326 are respectively connected across the connection point of the second microstrip bias line 327 and the power interface 207 and the grounded coplanar waveguide 205.
In this embodiment, the value of the first filter capacitor 314 is 10UF, the values of the second filter capacitor 315 and the eighth filter capacitor 323 are 33nF, the value of the third filter capacitor 316 is 470pF, the values of the fourth filter capacitor 317 and the tenth filter capacitor 325 are 39pF, the values of the fifth filter capacitor 318 and the eleventh filter capacitor 326 are 10pF, the value of the sixth filter capacitor 321 is 33UF, the value of the seventh filter capacitor 322 is 1UF, the value of the ninth filter capacitor 324 is 100pF, the values of the first dc blocking capacitor 313 and the second dc blocking capacitor 310 are 4pF, the value of the first stabilizing resistor 311 is 20 Ω, the value of the first stabilizing capacitor 312 is 5pF, and the value of the second stabilizing resistor 320 is 51 Ω.
In a specific implementation, the selected transistor 206 is a GaN HEMT, the model is CGH40010F of Cree, the package form is Flange, one end connected to the sixth microstrip line 306 is a gate, one end connected to the seventh microstrip line 307 is a drain, the source is grounded, the gate bias voltage is-2.8V, and the drain bias voltage is + 28V. It should be noted that the triangles in fig. 3 all represent grounding, but the capacitive-resistive grounding is performed by soldering to the grounded coplanar waveguide 205 on the top layer of the PCB, and the grounding of the source of the transistor 206 is performed by screwing to the heat sink module 104, since the metal ground layer 103 on the back layer of the PCB substrate 102 is a copper foil without solder mask, and the copper and aluminum heat sinks are both conductors, which contact to form a larger area ground. In this embodiment, the grounded coplanar waveguide 205 is connected to the metal ground layer 103 through a plurality of metalized via holes, and the metal ground layer 103 is connected to the heat dissipation module 104 through copper contact and screw contact, so that uniform grounding is achieved.
As shown in fig. 4, the layout view of the front surface of the PCB in this embodiment includes all the elements of the microstrip-grounded coplanar waveguide module 101. The first filter capacitor 314 is a patch polarity tantalum electrolytic capacitor, the packaging form is CASE C, and the positive stage is grounded due to the negative bias of the grid; the second filter capacitor 315 and the eighth filter capacitor 323 are patch non-polar ceramic capacitors, and the packaging form is 0805; the third filter capacitor 316, the fourth filter capacitor, the fifth filter capacitor 318, the ninth filter capacitor 324, the tenth filter capacitor 325, the eleventh filter capacitor 326, the first blocking capacitor 313, the second blocking capacitor 310 and the first stabilizing capacitor 312 are patch non-polar ceramic capacitors, and the packaging form is 0603; the sixth filter capacitor 321 is a patch polarity aluminum electrolytic capacitor, the packaging form is 10 × 10mm, and the negative electrode is grounded due to the positive bias of a drain stage; a seventh filter capacitor 322 is a patch non-polar ceramic capacitor, and the packaging form is 1210; the first stabilizing resistor 311 and the second stabilizing resistor 320 are chip non-polar resistors, and the package form is 0603.
In the layout of the embodiment shown in fig. 4, the values of the central microstrip lines of the CPWGs are shown in table 1.
TABLE 1
It can be seen that on the rf main signal line, the distance of the microstrip transmission line from the grounded coplanar waveguide 205 needs to be strictly controlled because the CPWG transmission line mode changes its characteristic impedance according to the distance of the signal line from the ground. The importance of impedance matching is self-evident for radio frequency power amplifiers. Too close distance will affect the impedance of the signal line and make its value smaller; if the distance is too far, the grounding coplanar waveguide does not play a role of signal shielding, and the CPWG is approximately equal to the microstrip line. In this embodiment, the impedance transformation in the CPWG mode has been calculated using impedance control software to ensure that no deviation from the original design occurs.
It is worth mentioning that the grounded coplanar waveguide 205 is processed with a plurality of irregular non-array metalized via holes for four purposes: firstly, the beating needs to be staggered so as to avoid forming a resonance cavity and bringing about a radiation problem; secondly, a grounding hole is drilled along the boundary, so that the bandwidth of the CPWG signal can be expanded; thirdly, the isolation degree can be increased by dense grounding holes; and fourthly, the grounding wire is connected with the metal ground layer 103, and sufficiently good grounding is realized.
At high frequencies, where inductance is more important than impedance for a particular current return path, the return current at high frequencies follows a path of least inductance, which is directly below the signal line, that minimizes the total loop area between the output current path and the return current path. Therefore, for the ground pin of the component, a method of punching the ground via near the corresponding pad should be adopted.
In this embodiment, the input interface 208 and the output interface 209 are two microstrip lines with a length of 5mm and a width of 1.5mm, which can be used as feed points of the SMA interface of the rf source, and provide a soldering socket at one end for the first dc blocking capacitor 313 and the second dc blocking capacitor 310.
In order to reduce the loss without introducing a dielectric layer with unknown dielectric constant, the top surface and the bottom surface of the PCB substrate 102 of the present embodiment are not covered with solder resist ink.
As shown in fig. 5, the conventional rf power amplifier adopts a microstrip transmission line mode, and ground lines are not laid on two sides of a signal main line, so that the spatial energy radiation loss is large, and the bias circuit requires interfaces at two ends, which is inconvenient for subsequent routing and layout design.
As shown in fig. 6, which is a simulated comparison of the small signal gain of a preferred embodiment of the present invention and a conventional rf power amplifier, it can be observed that the rf wideband power amplifier provided by the present invention has a certain gain improvement in comparison with the conventional rf wideband power amplifier in the vicinity of the center frequency. In advance, the rf power amplifier achieves a high gain of more than 15dB, the bandwidth in this embodiment is 3.20-4.10GHz, while the bandwidth of the conventional rf power amplifier is 3.26-4.07GHz, and the bandwidth is widened by about 100M.
As shown in fig. 7, which is a simulation comparison of the large signal gain of a conventional rf power amplifier, it is not meaningful to discuss only the small signal result since the power amplifier is generally operated in a nonlinear state. The abscissa of the graph is the output power, and the ordinate is the system gain, and it can be observed that the system gain decreases slowly first with the increase of the output power, and when Pout reaches the saturated output power Psat, the gain decreases sharply, resulting in a severe gain compression phenomenon. In the large signal simulation result, the radio frequency broadband power amplifier provided by the invention still performs better than the traditional radio frequency broadband power amplifier, and the table 2 shows the index list of relative attention of technicians in the large signal working state.
TABLE 2
Compared with the prior art, the radio frequency broadband power amplifier based on the grounded coplanar waveguide structure has the advantages of higher gain, larger P1dB and saturated output power Psat, smaller gain compression and higher efficiency.
The data in fig. 6, 7, and table 2 are based on simulations of schematic diagrams, and the results are ideal cases, without considering the coupling effect between the microstrip line and the grounded coplanar waveguide and without calculating the spatial radiation loss of energy. Since the embodiment of the present invention has certain advantages in simulation, it is expected that the measured data of the embodiment will be greatly improved compared with the conventional technology, and the following is illustrated by two figures.
Fig. 8 is a graph comparing the measured input return loss of a conventional rf power amplifier and a commercial rf power amplifier according to a preferred embodiment of the present invention. The input return loss (or S11) represents the reflection loss of the input end, and the larger the value of the input return loss, the more energy reflected by the port, i.e. the poorer the transmission effect. It is generally stated that return losses of less than-10 dB are considered less reflective.
Obviously, the return loss of the embodiment realized by the design method provided by the invention is smaller than that of a commercial product and a traditional radio frequency power amplifier, and the bandwidth is wider. The embodiment has S11 < -10dB in the range of f 2.948-3.644GHz, the commercial product has S11 < -10dB in the range of f 3.276-3.814GHz, the traditional technology has larger influence of junction temperature of the transistor due to lack of heat dissipation design, and only has S11 < -5.864dB at the position of the central frequency f 3.545 GHz.
Fig. 9 is a graph comparing the measured forward transmission coefficients of a conventional rf power amplifier and a commercial rf power amplifier according to a preferred embodiment of the present invention. The forward transmission coefficient (or S21) represents the energy transmitted from one port to two ports, and represents loss in a passive system and gain in an active system, and generally speaking, a gain of a single-stage power amplifier greater than 13dB is considered as a large gain.
As can be seen from fig. 9, the system gain of the commercial product is high according to the embodiment implemented by the design method provided by the present invention, the system gain of the commercial product is high, the system gain of the commercial product is S21>15dB in the range of f-2.883-3.584 GHz, the system gain of the commercial product is S21>15dB in the range of f-3.376-3.808 GHz, and the system gain of the conventional technology is 8.222dB at the center frequency f-3.545 GHz and is a narrow-band radio frequency power amplifier.
The actual measurement data of fig. 8 and 9 are consistent with the simulation results of fig. 6 and 7: the bandwidth characteristic of this embodiment is good, when S11 is less than-10 dB and S21 is greater than 15dB, the working frequency of a preferred embodiment of the present invention is 2.948-3.584GHz, and the bandwidth is 636 MHz; the working frequency of a commercial product in the market is 3.376-3.808GHz, and the bandwidth is 432 MHz; the radio frequency power amplifier realized by the traditional technology is narrow-band, and the gain is not too high and is only about 10 dB. Therefore, compared with other prior art, the embodiment has the advantages that the bandwidth, the gain and the efficiency are greatly improved, and the radio frequency broadband power amplifier with stable work and simple structure is realized.
From the above description, it is apparent that embodiments of the present invention describe a radio frequency broadband power amplifier based on a grounded coplanar waveguide structure and a design method thereof, so as to greatly reduce EMI interference of radio frequency signals while simplifying a circuit, and achieve stable operation of the radio frequency power amplifier. The design of the transistor mounting groove enables the problems of poor heat dissipation and fixed replacement mode to be cooperatively solved under the condition that a transistor grid and a drain electrode are not conventionally welded. Moreover, the impedance of the input matching network presents a plurality of sections of transmission lines with problem solving change, so that the frequency band range of the radio frequency power amplifier is widened, the working range of the radio frequency power amplifier is larger, and the gain flatness is better.
The above description is only a preferred embodiment of the present invention, and the described embodiment is only illustrative and not restrictive in every respect, and therefore does not limit the scope of the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention, and it is intended that all matter contained in the specification and/or shown in the accompanying drawings shall be interpreted as illustrative and not in a limiting sense and that all changes in form and/or details may be resorted to, including those skilled in the art without departing from the spirit and scope of the invention.
Claims (10)
1. A radio frequency broadband power amplifier based on a coplanar waveguide structure, comprising: the microstrip grounding coplanar waveguide module comprises a microstrip grounding coplanar waveguide module (101), a PCB substrate (102), a metal ground layer (103) and a heat dissipation module (104) which are arranged from top to bottom;
the microstrip grounding coplanar waveguide module (101) comprises an input matching network (201), an output matching network (202), a first bias circuit (203), a second bias circuit (204), a grounding coplanar waveguide (205), a transistor (206), a power interface (207), an input interface (208) and an output interface (209);
wherein, the input interface (208), the input matching network (201), the transistor (206), the output matching network (202) and the output interface (209) are connected in sequence; one end of the first bias circuit (203) is connected with the first end of the power interface (207), and the other end of the first bias circuit is connected to the connection position of the input matching network (201) and the first end of the transistor (206); one end of the second bias circuit (204) is connected with the second end of the power interface (207), and the other end of the second bias circuit is connected to the joint of the output matching network (202) and the second end of the transistor (206); the grounded coplanar waveguide (205) surrounds the input matching network (201), the output matching network (202), the first bias circuit (203) and the second bias circuit (204) at a certain interval on the top layer of the PCB substrate (102), and is connected with the metal ground layer (103) through a plurality of metalized through holes; and the third end of the power interface (207) is connected with the grounding coplanar waveguide (205) and is connected with the metal ground layer (103) through a plurality of irregular non-array metalized through holes.
2. The coplanar waveguide structure based radio frequency broadband power amplifier according to claim 1, wherein the input matching network (201) comprises: the microstrip line stabilizing circuit comprises a first microstrip line (301), a second microstrip line (302), a third microstrip line (303), a fourth microstrip line (304), a fifth microstrip line (305), a sixth microstrip line (306), a first DC blocking capacitor (313), a first stabilizing resistor (311) and a first stabilizing capacitor (312); the output matching network (202) comprises: a seventh microstrip line (307), an eighth microstrip line (308), a ninth microstrip line (309) and a second DC blocking capacitor (310);
the input interface (208), the first blocking capacitor (313), the first microstrip line (301), the second microstrip line (302), the third microstrip line (303), the fourth microstrip line (304), the fifth microstrip line (305), the sixth microstrip line (306), the transistor (206), the seventh microstrip line (307), the eighth microstrip line (308), the ninth microstrip line (309), the second blocking capacitor (310) and the output interface (209) are sequentially connected; the first stabilizing resistor (311) and the first stabilizing capacitor (312) are connected in parallel between the second microstrip line (302) and the third microstrip line (303);
the first bias circuit (203) comprises: the filter circuit comprises a first filter capacitor (314), a second filter capacitor (315), a third filter capacitor (316), a fourth filter capacitor (317), a fifth filter capacitor (318), a first microstrip bias line (319) and a second stabilizing resistor (320); the second bias circuit (204) comprises: a sixth filter capacitor (321), a seventh filter capacitor (322), an eighth filter capacitor (323), a ninth filter capacitor (324), a tenth filter capacitor (325), an eleventh filter capacitor (326) and a second microstrip bias line (327);
one end of the first microstrip bias line (319) is connected with the first end of the power interface (207), the other end of the first microstrip bias line is connected with one end of the second stabilizing resistor (320), and the other end of the second stabilizing resistor (320) is connected between the fourth microstrip line (304) and the fifth microstrip line (305); two ends of a first filter capacitor (314), a second filter capacitor (315), a third filter capacitor (316), a fourth filter capacitor (317) and a fifth filter capacitor (318) are respectively connected across the connection part of the first microstrip bias line (319) and the power interface (207) and the grounded coplanar waveguide (205); one end of the second microstrip bias line (327) is connected with the second end of the power interface (207), and the other end is connected between the seventh microstrip line (307) and the eighth microstrip line (308); two ends of a sixth filter capacitor (321), a seventh filter capacitor (322), an eighth filter capacitor (323), a ninth filter capacitor (324), a tenth filter capacitor (325) and an eleventh filter capacitor (326) are respectively bridged at the joint of the second microstrip bias line (327) and the power interface (207) and the grounded coplanar waveguide (205).
3. The RF broadband power amplifier according to claim 2, wherein the grounded coplanar waveguide (205) is spaced apart from the i-th microstrip line of the input matching network (201), the output matching network (202), the first bias circuit (203) and the second bias circuit (204) by a distance LiThe linewidth of the ith microstrip line is wiThe line width and the spacing change of the central conduction band satisfy the relation:
1.5*wi≤Li≤3.0*wi；
a plurality of irregular non-array metalized through holes are formed in the grounded coplanar waveguide (205) on the top layer of the PCB substrate (102), the distance between every two through holes is 0-lambda/20, and the arrangement area is all coplanar waveguide grounding strips of top layer non-signal line routing.
4. The RF broadband power amplifier according to claim 3, wherein the microstrip-grounded coplanar waveguide module (101) comprises a modified ground strip varying with the width of the central conduction band of the grounded coplanar waveguide (205) and a plurality of irregular non-array metalized vias printed on the top layer of the PCB substrate (102) in the form of printed circuit board, the metal ground layer (103) is printed on the back layer of the PCB substrate (102) in the form of printed circuit board, and the heat dissipation module (104) is in good contact with the metal ground layer (103) and is tightly mounted by screws.
5. The coplanar waveguide structure based radio frequency broadband power amplifier according to claim 2, wherein the power interface (207) is a 5-pin bent terminal, wherein from either end of the power interface (207), a first pin is a first end, connected to a first microstrip bias line (319); the fourth needle and the fifth needle are second ends and are connected with a second microstrip offset line (327); the second pin and the third pin are third ends and are connected with a grounded coplanar waveguide (205).
6. The coplanar waveguide structure-based radio frequency broadband power amplifier according to claim 1, wherein the transistor (206) is one of HEMT/JFET/LDMOS, the first terminal of the transistor (206) is a gate, the second terminal is a drain, the source of the transistor (206) is fixed to the heat sink (104) by two M2.5 screws, the operating frequency of the transistor (206) is 0-6GHz, and the package form is Flange;
the PCB substrate (102) is a high-frequency microwave plate, the dielectric constant is 2-10, the thickness of the substrate is 4-60 mil, the grounding coplanar waveguide (205) and the metal ground layer (103) printed on the top layer and the back layer of the PCB substrate (102) are both electrolytic copper foils, the thickness of the copper foils is 17-70 mu m, and the surface treatment process is silver deposition.
7. The coplanar waveguide structure based radio frequency broadband power amplifier according to claim 1, wherein the heat dissipation module (104) is an aluminum alloy, has a length equal to that of the PCB substrate (102), a width equal to that of the PCB substrate (102), and a height of 5mm to 15 mm; the top surface of the heat dissipation module (104) is provided with a tooth hole and a transistor mounting groove corresponding to the PCB substrate (102), wherein the tooth hole is the same as the PCB substrate (102) in position and size and is a through hole; the depth of the transistor mounting groove is H, the thickness of the transistor flange is H, and the relation is satisfied:
h is not more than copper cladding thickness, substrate thickness, H is not more than H +0.2 mm.
8. The RF broadband power amplifier according to any one of claims 1 to 7, wherein a plurality of rectangular solder joint arrays are arranged around any one or more of the first microstrip line (301), the second microstrip line (302), the third microstrip line (303), the fourth microstrip line (304), the fifth microstrip line (305), the sixth microstrip line (306), the seventh microstrip line (307), the eighth microstrip line (308) and the ninth microstrip line (309) for impedance control and adjustment.
9. A method of designing a radio frequency broadband power amplifier based on a grounded coplanar waveguide structure as defined in claim 8, comprising the steps of:
s1, determining the type of a transistor according to a required working frequency band and output power, downloading Datasheet and acquiring parameters, wherein the method comprises the following steps: selecting an AB class static working point according to the drain electrode working voltage, the working frequency, the threshold voltage, the saturated output power, the maximum gain and the efficiency under the saturated output power; if the transistor is not matched and low-frequency oscillation occurs, adding an RC (resistor-capacitor) stabilizing network or a grid resistor, and utilizing radio frequency/microwave simulation software to enable a stability factor in a working frequency band to be larger than 1; if no low-frequency oscillation occurs, an RC stable network or a grid resistor does not need to be added;
s2, designing a first bias circuit and a second bias circuit, wherein the first bias circuit and the second bias circuit at least comprise a quarter-wavelength impedance transformation microstrip line and a plurality of filter capacitors, and selecting values of all elements when approaching the infinite impedance according to values of S11 and S22;
s3, designing an input and output matching network, selecting a matching route with a Q value smaller than 1.5 in a Smith chart, converting the well-drawn load impedance and source impedance to a standard 50 ohm through at least 3 sections of impedance-variable microstrip transmission lines, wherein the parameters of the impedance-variable microstrip transmission lines are influenced by a selected PCB substrate and working frequency, and selecting and calculating by using a Smith chart tool in radio frequency/microwave simulation software;
s4, small signal and large signal simulation is carried out, and a micro-strip transmission line layout is generated after the electromagnetic simulation meets the design requirement;
s5, calculating a grounding coplanar waveguide, drawing a metal grounding layer around the microstrip transmission line layout generated in the step S4, wherein the distance between the metal grounding layer and the microstrip transmission line is larger than 1.5 times of the line width of the microstrip transmission line at the position and smaller than 3 times of the line width of the microstrip transmission line at the position, a plurality of randomly arranged metallized through holes are arranged on the metal grounding layer, the distance between the through holes is 0 to lambda/20, and the metal grounding layer is connected with a full-coverage solid metal ground layer of the PCB substrate back layer through the through holes;
s6, layout is carried out according to the packaging sizes of the capacitors, the resistors and the interface elements, wherein the arrangement of the heating device and the strong radiation device follows the rule that: transmission line corners are greater than 90 °; the RF and IF routing should cross; ensuring the signal integrity of the formation; the RF output is far away from the RF input and is respectively positioned at the two ends of the PCB; the distance between the heating device, the strong radiation device and the power supply and the peripheral edge of the PCB is at least 20H, wherein H refers to the distance between the heating device and the reference GND layer closest to the heating device;
s7, designing a heat dissipation module, keeping the aperture and the position of each mechanical installation to be aligned with the PCB substrate, and forming an installation groove and a tooth hole at the corresponding position of the transistor for fixing the transistor; two tooth holes which are suitable for the packaging size of the microstrip SMA connector are respectively formed at the left side and the right side of the heat dissipation module and are used for fixing the radio frequency input connector and the radio frequency output connector;
and S8, welding components, installing a heat dissipation module and testing the power amplifier.
10. The method for designing a radio frequency broadband power amplifier based on the grounded coplanar waveguide structure as claimed in claim 9, wherein in step S3, the parameters of the impedance-variable microstrip transmission line are selected according to the following rules:
s3.1, locking the characteristic impedance Z0；
S3.2, inputting the dielectric constant and the working center frequency of the PCB substrate;
s3.3, automatically calculating the length and the width of the microstrip transmission line by software;
s3.4, changing the characteristic impedance Z0；
And S3.5, repeating the steps S3.1 to S3.4 until the matching point is transformed into the centre point of the Smith chart, namely standard 50 ohms.
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| PCT/CN2022/081164 WO2022156828A1 (en) | 2021-01-22 | 2022-03-16 | Grounded coplanar waveguide structure-based radio frequency broadband power amplifier and design method |
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| CN113645814A (en) * | 2021-08-24 | 2021-11-12 | 中国电子科技集团公司第三十八研究所 | Heat dissipation structure, power amplification module and method of small-sized transmitting system |
| CN113960357A (en) * | 2021-10-27 | 2022-01-21 | 重庆大学 | High-bandwidth differential voltage probe of multistage microstrip transmission line |
| CN114448366A (en) * | 2022-02-09 | 2022-05-06 | 苏州英嘉通半导体有限公司 | Power amplifier |
| WO2022156828A1 (en) * | 2021-01-22 | 2022-07-28 | 华南理工大学 | Grounded coplanar waveguide structure-based radio frequency broadband power amplifier and design method |
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| CN116192180B (en) * | 2023-04-25 | 2023-07-07 | 中国电子科技集团公司信息科学研究院 | Universal reconfigurable radio frequency receiving and transmitting microsystem |
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| CN101888016A (en) * | 2010-06-21 | 2010-11-17 | 哈尔滨工程大学 | Ultra wide band antenna with trap characteristic |
| US11122653B2 (en) * | 2016-09-30 | 2021-09-14 | Whirlpool Corporation | Intermediate transition between an antenna and a coplanar waveguide transmission line of a solid state amplifier |
| CN106533377A (en) * | 2016-11-30 | 2017-03-22 | 中山大学 | Power amplifier with multiple octaves and design method thereof |
| CN109600120B (en) * | 2018-11-22 | 2021-11-02 | 北京航空航天大学 | Ultra-wideband low-noise amplifier adopting mixed frequency compensation network |
| CN112865708A (en) * | 2021-01-22 | 2021-05-28 | 华南理工大学 | Radio frequency broadband power amplifier based on grounded coplanar waveguide structure and design method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2022156828A1 (en) * | 2021-01-22 | 2022-07-28 | 华南理工大学 | Grounded coplanar waveguide structure-based radio frequency broadband power amplifier and design method |
| CN113645814A (en) * | 2021-08-24 | 2021-11-12 | 中国电子科技集团公司第三十八研究所 | Heat dissipation structure, power amplification module and method of small-sized transmitting system |
| CN113645814B (en) * | 2021-08-24 | 2023-05-16 | 中国电子科技集团公司第三十八研究所 | Heat radiation structure, power amplifier module and method of small-sized transmitting system |
| CN113960357A (en) * | 2021-10-27 | 2022-01-21 | 重庆大学 | High-bandwidth differential voltage probe of multistage microstrip transmission line |
| CN114448366A (en) * | 2022-02-09 | 2022-05-06 | 苏州英嘉通半导体有限公司 | Power amplifier |
| CN114448366B (en) * | 2022-02-09 | 2024-03-12 | 苏州英嘉通半导体有限公司 | Power amplifier |
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