CN112864252A - DNA sensor based on thin film transistor and preparation method thereof - Google Patents
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- 239000010409 thin film Substances 0.000 title claims abstract description 46
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 55
- 239000003068 molecular probe Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 108020004414 DNA Proteins 0.000 claims description 109
- 102000053602 DNA Human genes 0.000 claims description 22
- 239000010931 gold Substances 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- 238000001704 evaporation Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 238000001338 self-assembly Methods 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 238000001179 sorption measurement Methods 0.000 claims description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 4
- 229910005543 GaSe Inorganic materials 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 229910016021 MoTe2 Inorganic materials 0.000 claims description 3
- 229910020042 NbS2 Inorganic materials 0.000 claims description 3
- 229910020039 NbSe2 Inorganic materials 0.000 claims description 3
- 229910020046 NbTe2 Inorganic materials 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910005643 SnTe2 Inorganic materials 0.000 claims description 3
- 229910004211 TaS2 Inorganic materials 0.000 claims description 3
- 229910008561 TiTe2 Inorganic materials 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910003090 WSe2 Inorganic materials 0.000 claims description 3
- 229910006247 ZrS2 Inorganic materials 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910052961 molybdenite Inorganic materials 0.000 claims description 3
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 239000011133 lead Substances 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 238000002347 injection Methods 0.000 abstract description 7
- 239000007924 injection Substances 0.000 abstract description 7
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 150000002500 ions Chemical class 0.000 abstract description 5
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 13
- 238000001514 detection method Methods 0.000 description 11
- 239000008055 phosphate buffer solution Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 2
- 239000007853 buffer solution Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000011898 label-free detection Methods 0.000 description 2
- 239000002075 main ingredient Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- -1 silicon alkene Chemical class 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M sodium chloride Inorganic materials [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 229910000162 sodium phosphate Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000000018 DNA microarray Methods 0.000 description 1
- 238000001712 DNA sequencing Methods 0.000 description 1
- 208000026350 Inborn Genetic disease Diseases 0.000 description 1
- 229910016978 MnOx Inorganic materials 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007876 drug discovery Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 208000016361 genetic disease Diseases 0.000 description 1
- 238000003205 genotyping method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 230000001717 pathogenic effect Effects 0.000 description 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000000489 vacuum metal deposition Methods 0.000 description 1
Images
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- G01N27/28—Electrolytic cell components
- G01N27/30—Electrodes, e.g. test electrodes; Half-cells
- G01N27/327—Biochemical electrodes, e.g. electrical or mechanical details for in vitro measurements
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/66409—Unipolar field-effect transistors
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Abstract
The invention relates to a DNA sensor based on a thin film transistor and a preparation method thereof, wherein the DNA sensor comprises the thin film transistor and a DNA molecular probe, the thin film transistor comprises a substrate, a gate electrode, an insulating layer, a source electrode, a drain electrode and a semiconductor layer, the substrate, the gate electrode and the insulating layer are sequentially arranged from bottom to top, the semiconductor layer is arranged on the insulating layer, the source electrode and the drain electrode are in contact with the semiconductor layer, and the DNA molecular probe is fixed on the source electrode and the drain electrode. Compared with the prior art, the invention adopts the source and drain electrodes as the substrate, and the DNA molecular probe is fixed on the source and drain electrodes, thereby avoiding the influence of physical absorption on the organic semiconductor layer on moisture and certain ions, improving charge injection, enhancing the saturation current and carrier mobility of the sensor, and further improving the stability and sensitivity of the DNA sensor.
Description
Technical Field
The invention belongs to the technical field of DNA sensors, and relates to a DNA sensor based on a thin film transistor and a preparation method thereof.
Background
With the development of technologies such as bioinformatics, internet of things and the like, DNA molecules are regarded as the most basic substances in bioengineering, which attracts attention of extensive research institutes, and the development of DNA detection technology also promotes the continuous progress of research work on DNA structures and functions. At present, the DNA detection technology includes the traditional DNA sequencing technology, DNA chips, biosensors and the like. The DNA biosensor has the characteristics of high detection speed, high sensitivity and the like, and is widely applied to the fields of environmental monitoring, aerospace and the like.
In recent years, research and application of organic transistor devices have been greatly developed, and DNA detection systems have attracted considerable attention in the fields of genotyping, drug discovery, molecular diagnostics, and the like, and the technology has been widely applied to pathogenic and genetic disease diagnostics, and the like. Conventional labeled DNA sensors cannot rapidly monitor probe interactions and also require complex analytical systems, which are expensive, time consuming and cumbersome. In this case, compared with the conventional DNA sensor, the label-free detection method eliminates the labeling process, simplifies the analysis process, and promotes the development of DNA detection.
Thin film transistors, which are transducers for DNA sensors, have certain advantages over existing optical detection techniques and are considered to be the most promising candidates. Previous studies have demonstrated that electrical detection has higher sensitivity than optical detection. In addition, thin film transistor based electrical inspection systems may be a faster inspection process. In recent years, different approaches have been developed to realize thin film transistor-based DNA sensors. However, they are mostly based on the physical absorption of DNA molecules on semiconductors and achieved by changing the electrical characteristics of transistors, but the physical absorption on semiconductors is sensitive to moisture and some ions, which reduces the stability and reproducibility of DNA sensors, thereby reducing their sensitivity.
Disclosure of Invention
The invention aims to provide a DNA sensor based on a thin film transistor and a preparation method thereof.
The purpose of the invention can be realized by the following technical scheme:
a DNA sensor based on a thin film transistor comprises the thin film transistor and a DNA molecular probe, wherein the thin film transistor comprises a substrate, a gate electrode, an insulating layer, a source electrode, a drain electrode and a semiconductor layer, the substrate, the gate electrode and the insulating layer are sequentially arranged from bottom to top, the semiconductor layer is arranged on the insulating layer, the source electrode, the drain electrode and the semiconductor layer are in contact, and the DNA molecular probe is fixed on the source electrode and the drain electrode.
Furthermore, the source and drain electrodes and the semiconductor layer are both arranged on the insulating layer, and the semiconductor layer is positioned in the channel of the source and drain electrodes.
Or, the source and drain electrodes are arranged on the semiconductor layer.
Furthermore, the substrate is made of an insulating material, or a composite material formed by covering a layer of insulating material on the surface of a conductive material. The insulating material is preferably glass or ceramic. If the root mean square roughness of the substrate surface is greater than 1 nm, smoothing with an insulating polymer coating of polymethyl methacrylate or polyvinyl alcohol is required.
Further, the gate electrode is made of one or more of gold (Au), aluminum (Al), copper (Cu), titanium (Ti), silver (Ag), or heavily doped silicon.
Further, the material of the insulating layer includes one or more of silicon dioxide, silicon nitride, aluminum oxide, titanium oxide, or polyvinyl alcohol. The insulating layer is mainly made of an insulating material with a high dielectric constant.
Further, the source/drain electrode may be made of one or more of gold (Au), silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), aluminum (Al), titanium (Ti), lead (Pd), or platinum (Pt).
Furthermore, the material of the semiconductor layer is graphene, black phosphorus, silicon alkene, metal oxide, MoS2、WS2、MoSe2、WSe2、MoTe2、WTe2、ZrS2、ZrSe2、NbSe2、NbS2、TaS2、NiSe2、GaSe、GaTe、InSe、ReTe2、TiTe2、NbTe2Or SnTe2. The metal oxide is preferably TiOx、NbOx、MnOx、VaOxOr TaO3. The semiconductor layer is made of two-dimensional material.
Further, the DNA molecular probe is an ssDNA molecular probe or a dsDNA molecular probe.
A preparation method of a DNA sensor based on a thin film transistor comprises the following steps:
1) preparing a gate electrode on the surface of the substrate by adopting an evaporation or sputtering method;
2) manufacturing an insulating layer on the gate electrode by adopting an evaporation method;
3) depositing a source-drain electrode and a semiconductor layer, and fixing a DNA molecular probe on the surface of the source-drain electrode by a physical adsorption, bonding or self-assembly method.
When the source-drain electrode and the semiconductor layer are both arranged on the insulating layer and the semiconductor layer is positioned in a channel of the source-drain electrode, in the step 3), firstly, the position of the source-drain electrode is determined above the insulating layer by using a mask plate, and the source-drain electrode is deposited on the semiconductor layer by adopting a vacuum metal deposition method; and preparing a semiconductor layer by adopting a vacuum evaporation, solution spin coating or film spinning method and depositing the semiconductor layer on the insulating layer of the channel region between the source electrode and the drain electrode to form the DNA sensor with the bottom-gate bottom contact structure.
When the source and drain electrodes are disposed on the semiconductor layer, in step 3), the semiconductor layer is first deposited on the insulating layer, and then the source and drain electrodes are deposited on the semiconductor layer.
Wherein the background vacuum degree is not less than 10-4Pa, metal electrodeThe deposition rate was 20 nm/min and the other material deposition rate was 0.03 nm/min.
The invention provides a DNA sensor based on a thin film transistor, which records and analyzes the characteristics of a target object based on various physicochemical signal changes caused by the interaction of DNA molecules, thereby realizing the detection and monitoring of the target object. The DNA sensor is composed of a recognition element and a transducer, the thin film transistor is used as the transducer, and the signal sensed by the recognition element is converted into other recordable signals, such as mass change, frequency change, magnetic signals, fluorescent signals, electric signals, sound wave signals and the like; the recognition element is a DNA molecular probe and is fixed on the source and drain electrodes by means of adsorption, bonding, self-assembly and the like. By applying voltage on the source electrode and the drain electrode of the DNA sensor, charge injection is improved, and the saturation current and the carrier mobility of the sensor are enhanced, so that the sensitivity of the DNA sensor is improved.
Compared with the prior art, the invention has the following characteristics:
1) according to the invention, the source and drain electrodes are used as the substrate, and the DNA molecular probe is fixed on the source and drain electrodes, so that the influence of physical absorption on moisture and certain ions on the organic semiconductor layer is avoided, the charge injection is improved, the saturation current and the carrier mobility of the sensor are enhanced, and the stability and the sensitivity of the DNA sensor are improved;
2) the traditional DNA sensor has the problems of high cost, time consumption and complexity, and the label-free detection method of the DNA sensor based on the thin film transistor omits the label process, simplifies the analysis process, improves the DNA detection efficiency and promotes the development of DNA detection.
Drawings
FIG. 1 is a schematic view showing the structure of a DNA sensor based on a thin film transistor in example 1;
FIG. 2 is an electrical schematic diagram of the thin film transistor-based DNA sensor in example 1 with voltage applied at the source and drain electrodes;
FIG. 3 is a graph showing output characteristics of organic field effect transistors in example 1 without immobilized DNA (a) and with an Au surface treated with SH-ssDNA (b);
FIG. 4 is a graph showing transfer characteristics of the organic field effect transistor of example 1 without immobilized DNA and with an SH-ssDNA-treated Au surface;
FIG. 5 is a schematic view showing the structure of a DNA sensor based on a thin film transistor in example 2;
FIG. 6 is a schematic view showing the structure of a DNA sensor based on a thin film transistor in a comparative example;
the notation in the figure is:
1-substrate, 2-gate electrode, 3-insulating layer, 4-source drain electrode, 5-semiconductor layer and 6-DNA molecular probe.
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments. The present embodiment is implemented on the premise of the technical solution of the present invention, and a detailed implementation manner and a specific operation process are given, but the scope of the present invention is not limited to the following embodiments.
In the following examples, SH-ssDNA (5 '-SH-TATA CGGT TCGCGC-3') was synthesized by Shanghai Santong Biotech Co., Ltd.
Example 1:
a structure of a DNA sensor based on a thin film transistor is shown in figure 1, the DNA sensor is composed of a recognition element and a transducer, a DNA molecular probe 6 is used as the recognition element, and the DNA molecular probe 6 is solidified on the surface of a source electrode and a drain electrode 4 through adsorption, bonding, self-assembly and other modes; the transducer is a thin film transistor, and the transducer is used for converting a signal sensed by the identification element into other recordable signals, such as mass change, frequency change, magnetic signals, fluorescent signals, electric signals, sound wave signals and the like. The DNA sensor is formed by sequentially connecting a substrate 1, a gate electrode 2 and an insulating layer 3, then preparing a source-drain electrode 4 on the insulating layer 3, fixing a DNA molecular probe 6 on the source-drain electrode 4, and finally evaporating and depositing a semiconductor layer 5 on the upper surface of the insulating layer 3 in a channel region between the source-drain electrode 4 to form the bottom-gate bottom-contact DNA sensor.
The specific preparation method of each structural layer of the DNA sensor of this example is as follows:
1) selecting heavily doped silicon wafers as a substrate 1 and a gate electrode 2, wherein the conductivity of the silicon wafers is 0.01-0.15 omega cm, ultrasonically cleaning the substrate 1 with acetone and ethanol for fifteen minutes, and washing with a corresponding solvent when the substrate is taken out after ultrasonic cleaning to remove adhered debris;
2) thermally oxidizing a layer of silicon dioxide with the thickness of 300nm on a silicon wafer to be used as an insulating layer 3 of a transistor;
3) washing the silicon wafer with deionized water, and baking in a vacuum oven at 120 ℃; and after the silicon wafer is cooled, putting the silicon wafer into vacuum evaporation equipment. Using a mask method to rapidly evaporate a gold electrode as a source electrode and a drain electrode 4 of the transistor, and determining that the length of a channel is 180 mu m and the width is 2700 mu m;
4) preparing Phosphate Buffer Solution (PBS) containing Na as main ingredient2HPO4、NaH2PO4NaCl, KCl, pH 7.4, and the ssDNA probe used was dissolved in Phosphate Buffer Solution (PBS). Dripping PBS solution containing ssDNA onto the source and drain electrodes 4, namely gold electrodes, to realize the immobilization of the ssDNA molecular probe 6;
5) washing with deionized water, flushing residual water with high pressure, and placing the device in vacuum chamber until vacuum pressure reaches 10%-4Pa, the semiconductor layer 5 was slowly heated to 110 ℃ to start evaporation, and the evaporation was carried out at an evaporation rate of 0.03nm/s on the upper surface of the insulating layer 3 in the channel region between the source and drain electrodes 4.
In this example, ssDNA molecular probes were physically immobilized on the source and drain electrodes 4 of a thin film transistor device, formed by gathering ssDNA molecules together by van der waals forces, and a bias voltage was applied between the source and gate electrodes, as shown in fig. 2, and the electrical properties were measured using a test device.
Performance analysis of the DNA sensor of this example:
the output characteristic curves of the organic field effect transistor in which the source-drain electrodes 4, i.e., the Au surface, had no dna immobilized (a) and the Au surface was treated with SH-ssDNA (b) are shown in fig. 3. It can be seen that after DNA was immobilized, the drain current was significantly increased, improving device performance.
The transfer characteristic curve of the organic field effect transistor in which no DNA was immobilized on the source-drain electrode 4, i.e., the Au surface, and the Au surface was treated with SH-ssDNA at a gate voltage of-50V is shown in FIG. 4. It can be seen that the threshold voltage of the two samples is significantly enhanced, and that of the untreated sample of gold electrode is-17V. After the source and drain electrodes 4 are modified by SH-ssDNA, the threshold voltage is reduced to-10V due to the reduction of the injection barrier between the metal electrode and the organic active layer. Studies have shown that phosphate groups on the DNA backbone create a net negative charge in the DNA molecule, thereby attracting holes on the semiconductor, increasing the tunneling probability of charge injection. Therefore, the SH-ssDNA is fixed on the source and drain electrodes 4, so that the injection characteristic can be improved, the saturation current and the carrier mobility of the sensor can be enhanced, and the sensitivity of the DNA sensor can be improved.
Example 2:
the structure of the DNA sensor in this example is substantially the same as that of example 1, except that:
in this embodiment, referring to fig. 5, a substrate 1, a gate electrode 2, an insulating layer 3, and a semiconductor layer 5 are sequentially connected, then a source/drain electrode 4 is fabricated on the semiconductor layer 5 to form a bottom-gate top contact structure, and finally a DNA molecular probe is fixed on the source/drain electrode 4.
The specific preparation method of each structural layer of the thin film transistor in this embodiment is as follows:
1) selecting heavily doped silicon wafers as a substrate 1 and a gate electrode 2, wherein the conductivity of the silicon wafers is 0.01-0.15 omega cm, and ultrasonically cleaning the substrate 1 with acetone and ethanol for fifteen minutes; after the ultrasonic treatment, the ultrasonic wave is taken out and washed by a corresponding solvent to remove adhered debris;
2) thermally oxidizing a layer of silicon dioxide with the thickness of 300nm on a silicon wafer to be used as an insulating layer 3 of a transistor; washing the silicon wafer with deionized water, and baking in a vacuum oven at 90 ℃;
3) and after the silicon wafer is cooled, putting the silicon wafer into vacuum evaporation equipment. When the vacuum pressure reaches 10-4Pa slowly heats the semiconductor layer 5 to 110 deg.C to start evaporation, and the evaporation speed is 0.05nm/s to evaporate on the silicon wafer. The substrate temperature for deposition of the semiconductor layer 5 is maintained at 70 ℃;
4) after the film temperature is cooled to room temperature, a gold electrode is quickly evaporated by using a mask method to be used as a source electrode and a drain electrode 4 of the transistor, and the length of a channel is determined to be 180 mu m and the width is determined to be 3800 mu m;
5) preparing PBS buffer solution containing Na as main ingredient2HPO4、NaH2PO4NaCl, KCl, pH 7.4, and the ssDNA probe used was dissolved in PBS buffer solution. Dripping PBS solution containing ssDNA onto the source and drain electrodes 4 to realize the fixation of the ssDNA molecular probe 6;
6) and washing the thin film transistor by adopting a large amount of deionized water, removing residual ions in the solution, finally placing the thin film transistor device into a vacuum cavity, and naturally drying for 8 hours.
In this embodiment, ssDNA molecular probes 6 are physically immobilized on the source and drain electrodes 4 of the thin film transistor device, formed by gathering ssDNA molecules together by van der waals force, and a bias voltage is applied between the source and drain electrodes while the ssDNA is immobilized, and the electrical properties of the ssDNA are measured using a test device.
Comparative example:
referring to the method of embodiment 2, a DNA sensor based on a thin film transistor shown in fig. 6 is prepared, where the DNA sensor includes a thin film transistor and a DNA molecular probe 6, the thin film transistor includes a substrate 1, a gate electrode 2, an insulating layer 3, source and drain electrodes 4 and a semiconductor layer 5, the substrate 1, the gate electrode 2 and the insulating layer 3 are sequentially disposed from bottom to top, the semiconductor layer 5 is disposed on the insulating layer 3, the source and drain electrodes 4 are in contact with the semiconductor layer 5, and the DNA molecular probe 6 is fixed on the semiconductor layer 5.
Table 1 shows device parameters of the DNA sensor based on the bottom-gate top contact structure with the source-drain electrode 4 as the substrate and the DNA sensor based on the semiconductor layer 5 as the substrate, which are prepared by using the above-described examples and comparative examples and under the given conditions of table 1.
TABLE 1
As can be seen from table 1, there is a significant variation in threshold voltage among the key parameters in the bottom contact: the threshold voltage was reduced to-10V before the immobilization of ssDNA, and the mobility did not change much when the ssDNA was immobilized, and the saturation current reached 46.74. mu.A with SH-ssDNA modification, which was twice that of the untreated sample. The changes of the parameters are generated after the ssDNA is fixed on the Au electrode, and the SH-ssDNA is fixed on the source electrode and the drain electrode to play a role in improving the charge injection characteristic, so that the sensitivity of the DNA sensor is improved. Furthermore, when the Au electrodes were treated with SH-ssDNA, the field effect mobility generated by the bottom-gate bottom contact was comparable to the level of the bottom-gate top-contact sensor fabricated with untreated source and drain electrodes at room temperature. The saturation current and mobility of the semiconductor layer-based DNA sensor are lower than those of the source-drain electrode-based sensor, and physical absorption on the semiconductor layer is sensitive to moisture and certain ions, which reduces the stability and repeatability of the DNA sensor, thereby reducing its sensitivity.
Example 3:
the DNA sensor comprises a thin film transistor and a DNA molecular probe 6, wherein the thin film transistor comprises a substrate 1, a gate electrode 2, an insulating layer 3, a source electrode, a drain electrode 4 and a semiconductor layer 5, the substrate 1, the gate electrode 2 and the insulating layer 3 are sequentially arranged from bottom to top, the semiconductor layer 5 is arranged on the insulating layer 3, the source electrode, the drain electrode 4 and the semiconductor layer 5 are in contact, and the DNA molecular probe 6 is fixed on the source electrode, the drain electrode 4.
Wherein, the source-drain electrode 4 and the semiconductor layer 5 are both arranged on the insulating layer 3, and the semiconductor layer 5 is positioned in the channel of the source-drain electrode 4.
The substrate 1 is made of an insulating material or a composite material formed by covering a layer of insulating material on the surface of a conductive material.
The gate electrode 2 is made of one or more of gold, aluminum, copper, titanium, silver, or heavily doped silicon.
The material of the insulating layer 3 includes one or more of silicon dioxide, silicon nitride, aluminum oxide, titanium oxide, or polyvinyl alcohol.
The source-drain electrode 4 is made of one or more of gold, silver, copper, aluminum, magnesium, aluminum, titanium, lead, or platinum.
The material of the semiconductor layer 5 is graphene, black phosphorus, silicon alkene, metal oxide, MoS2、WS2、MoSe2、WSe2、MoTe2、WTe2、ZrS2、ZrSe2、NbSe2、NbS2、TaS2、NiSe2、GaSe、GaTe、InSe、ReTe2、TiTe2、NbTe2Or SnTe2。
The DNA molecular probe 6 is a ssDNA molecular probe or a dsDNA molecular probe.
The preparation method of the DNA sensor based on the thin film transistor comprises the following steps:
1) preparing a gate electrode 2 on the surface of a substrate 1 by adopting an evaporation or sputtering method;
2) manufacturing an insulating layer 3 on the gate electrode 2 by adopting an evaporation method;
3) depositing a source drain electrode 4 and a semiconductor layer 5, and fixing a DNA molecular probe 6 on the surface of the source drain electrode 4 by a physical adsorption, bonding or self-assembly method.
Example 4:
in this embodiment, the source-drain electrodes 4 are provided on the semiconductor layer 5, which is otherwise the same as embodiment 4.
The embodiments described above are described to facilitate an understanding and use of the invention by those skilled in the art. It will be readily apparent to those skilled in the art that various modifications to these embodiments may be made, and the generic principles described herein may be applied to other embodiments without the use of the inventive faculty. Therefore, the present invention is not limited to the above embodiments, and those skilled in the art should make improvements and modifications within the scope of the present invention based on the disclosure of the present invention.
Claims (10)
1. The DNA sensor based on the thin film transistor is characterized by comprising the thin film transistor and a DNA molecular probe (6), wherein the thin film transistor comprises a substrate (1), a gate electrode (2), an insulating layer (3), a source drain electrode (4) and a semiconductor layer (5), the substrate (1), the gate electrode (2) and the insulating layer (3) are sequentially arranged from bottom to top, the semiconductor layer (5) is arranged on the insulating layer (3), the source drain electrode (4) is in contact with the semiconductor layer (5), and the DNA molecular probe (6) is fixed on the source drain electrode (4).
2. The thin film transistor-based DNA sensor according to claim 1, wherein the source and drain electrodes (4) and the semiconductor layer (5) are both disposed on the insulating layer (3), and the semiconductor layer (5) is located in the channel of the source and drain electrodes (4).
3. The thin film transistor-based DNA sensor according to claim 1, wherein the source and drain electrodes (4) are disposed on the semiconductor layer (5).
4. The thin film transistor-based DNA sensor according to claim 1, wherein the substrate (1) is made of an insulating material or a composite material formed by covering a layer of insulating material on the surface of a conductive material.
5. The thin film transistor-based DNA sensor of claim 1, wherein the gate electrode (2) comprises one or more of gold, aluminum, copper, titanium, silver or heavily doped silicon.
6. The thin film transistor-based DNA sensor according to claim 1, wherein the insulating layer (3) is made of one or more materials selected from silicon dioxide, silicon nitride, aluminum oxide, titanium oxide and polyvinyl alcohol.
7. The thin film transistor-based DNA sensor according to claim 1, wherein the source and drain electrodes (4) are made of one or more of gold, silver, copper, aluminum, magnesium, aluminum, titanium, lead or platinum.
8. The thin film transistor-based DNA sensor according to claim 1, wherein the semiconductor layer (5) is made of stoneGraphene, black phosphorus, silylene, metal oxide, MoS2、WS2、MoSe2、WSe2、MoTe2、WTe2、ZrS2、ZrSe2、NbSe2、NbS2、TaS2、NiSe2、GaSe、GaTe、InSe、ReTe2、TiTe2、NbTe2Or SnTe2。
9. The thin film transistor-based DNA sensor of claim 1, wherein the DNA molecular probes (6) are ssDNA molecular probes or dsDNA molecular probes.
10. A method for preparing a thin film transistor-based DNA sensor according to any one of claims 1 to 9, comprising the steps of:
1) preparing a gate electrode (2) on the surface of a substrate (1) by adopting an evaporation or sputtering method;
2) manufacturing an insulating layer (3) on the gate electrode (2) by adopting an evaporation method;
3) depositing a source drain electrode (4) and a semiconductor layer (5), and fixing a DNA molecular probe (6) on the surface of the source drain electrode (4) by a physical adsorption, bonding or self-assembly method.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060016699A1 (en) * | 2004-07-21 | 2006-01-26 | Masao Kamahori | Apparatus and method for measuring biological material |
| KR20120093630A (en) * | 2011-02-15 | 2012-08-23 | 명지대학교 산학협력단 | Dna sensor having organic thin film transistor and method for fabricating the same |
| CN103235022A (en) * | 2013-03-28 | 2013-08-07 | 上海大学 | DNA biosensor and preparation method thereof |
| CN103594626A (en) * | 2013-11-20 | 2014-02-19 | 上海大学 | Organic thin film transistor and manufacturing method thereof |
| CN105861294A (en) * | 2016-04-07 | 2016-08-17 | 上海工程技术大学 | Semiconductor heterojunction DNA biological sensor as well as preparation and application thereof |
| KR20190054740A (en) * | 2017-11-14 | 2019-05-22 | 주식회사 엘지화학 | Method for manufacturing thin film transistor sensors |
-
2021
- 2021-01-05 CN CN202110008217.7A patent/CN112864252A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060016699A1 (en) * | 2004-07-21 | 2006-01-26 | Masao Kamahori | Apparatus and method for measuring biological material |
| KR20120093630A (en) * | 2011-02-15 | 2012-08-23 | 명지대학교 산학협력단 | Dna sensor having organic thin film transistor and method for fabricating the same |
| CN103235022A (en) * | 2013-03-28 | 2013-08-07 | 上海大学 | DNA biosensor and preparation method thereof |
| CN103594626A (en) * | 2013-11-20 | 2014-02-19 | 上海大学 | Organic thin film transistor and manufacturing method thereof |
| CN105861294A (en) * | 2016-04-07 | 2016-08-17 | 上海工程技术大学 | Semiconductor heterojunction DNA biological sensor as well as preparation and application thereof |
| KR20190054740A (en) * | 2017-11-14 | 2019-05-22 | 주식회사 엘지화학 | Method for manufacturing thin film transistor sensors |
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