CN112864210A - Display module and manufacturing method thereof - Google Patents
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- CN112864210A CN112864210A CN202110105970.8A CN202110105970A CN112864210A CN 112864210 A CN112864210 A CN 112864210A CN 202110105970 A CN202110105970 A CN 202110105970A CN 112864210 A CN112864210 A CN 112864210A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
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Abstract
The embodiment of the invention discloses a display module and a manufacturing method thereof. The display module assembly includes: the array substrate is internally provided with a thin film transistor; the protective film layer is arranged on the non-light-emitting side of the array substrate; the protective film layer comprises a lower screen opening area which is used for transmitting light; the diffuse reflection structure is arranged in the array substrate or the protective film layer, and the projection of the diffuse reflection structure on the non-light-emitting side of the array substrate covers the projection of the under-screen opening area on the non-light-emitting side of the array substrate; the diffuse reflection structure is used for performing diffuse reflection on light rays passing through the open hole area under the screen. Compared with the prior art, the embodiment of the invention reduces the light intensity irradiated to the thin film transistor TFT, relieves the mura problem of the open area under the screen, and improves the display effect of the array substrate.
Description
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to a display module and a manufacturing method thereof.
Background
Along with the continuous development of science and technology, the application of smart mobile phone in human daily life is more and more extensive, and the display module group is as the important component part of smart mobile phone, and the position is also more and more important. Fingerprint identification under the screen is the most popular biometric identification technology currently displayed, and the application proportion in a display module is gradually increased. However, after fingerprint identification function under the additional screen of current display module assembly, the problem of fingerprint identification district mura appears easily, has influenced display module assembly's display effect.
Disclosure of Invention
The embodiment of the invention provides a display module and a manufacturing method thereof, which are used for improving the display effect of the display module.
In order to achieve the technical purpose, the embodiment of the invention provides the following technical scheme:
a display module, comprising:
the array substrate is internally provided with a thin film transistor;
the protective film layer is arranged on the non-light-emitting side of the array substrate; the protective film layer comprises a lower screen opening area which is used for transmitting light;
the diffuse reflection structure is arranged in the array substrate or the protective film layer, and the projection of the diffuse reflection structure on the non-light-emitting side of the array substrate covers the projection of the under-screen opening area on the non-light-emitting side of the array substrate; the diffuse reflection structure is used for performing diffuse reflection on light rays passing through the open hole area under the screen.
Optionally, the protective film layer comprises:
the composite adhesive tape is provided with an opening, and the opening is positioned in the opening area under the screen;
the supporting layer is positioned between the array substrate and the composite adhesive tape; the support layer covers the opening.
Optionally, the support layer is integrally provided with the diffuse reflective structure;
alternatively, the diffuse reflection structure is arranged on the surface of the support layer.
Optionally, the array substrate includes:
a substrate;
the buffer layer is positioned on one side, far away from the protective film layer, of the substrate, and the thin film transistor is arranged on one side, far away from the substrate, of the buffer layer.
Optionally, the substrate is provided integrally with the diffuse reflective structure; or the buffer layer and the diffuse reflection structure are integrally arranged;
or the diffuse reflection structure is arranged on the surface of the substrate or the buffer layer.
Optionally, the diffuse reflection structure comprises a base body and a plurality of convex parts arranged on the surface of the base body;
optionally, the protrusion is arranged on one side surface of the base body; or the convex parts are arranged on the two side surfaces of the base body.
Optionally, a cross-sectional shape of the protrusion in a thickness direction of the display module includes at least one of a rectangle, a circle, a semicircle, an ellipse, a semi-ellipse, a trapezoid, or a triangle.
Optionally, the diffuse reflective structure comprises a matrix and diffusely reflective particles distributed within the matrix; the reflectivity of the diffuse reflection particles is different from that of the matrix;
optionally, the shape of the diffuse reflective particles comprises one or a combination of a sphere, a cuboid, a pyramid, or a star;
optionally, the material of the diffuse reflective particulates comprises at least one of air, silicone, polyethylene, acrylic, nano barium sulfate, silica, and calcium carbonate.
Correspondingly, the invention also provides a manufacturing method of the display module, which is suitable for the display module in any embodiment of the invention. The manufacturing method comprises the following steps:
providing an array substrate, wherein a film layer of the array substrate is internally provided with a thin film transistor;
forming a protective film layer on the non-light-emitting side of the array substrate, wherein the protective film layer comprises a screen lower opening area, and the screen lower opening area is used for transmitting light;
wherein, a diffuse reflection structure is arranged in the array substrate or the protective film layer; the projection of the diffuse reflection structure on the non-light-emitting side of the array substrate covers the projection of the under-screen opening area on the non-light-emitting side of the array substrate; the diffuse reflection structure is used for performing diffuse reflection on light rays passing through the open hole area under the screen.
Optionally, the manufacturing method of the diffuse reflection structure includes:
providing a substrate;
and etching the surface of the substrate to form the convex part.
According to the embodiment of the invention, the diffuse reflection structure is arranged in the display module and is correspondingly arranged with the lower opening area of the screen, so that light passing through the lower opening area of the screen can be subjected to diffuse reflection, the light intensity irradiated to the TFT is reduced, the mura problem of the lower opening area of the screen is relieved, and the display effect of the display module is improved.
Drawings
Fig. 1 is a schematic cross-sectional structure diagram of a display module according to an embodiment of the present invention;
FIG. 2 is an enlarged schematic view of a region A in FIG. 1;
FIG. 3 is a schematic cross-sectional view of a conventional display module;
fig. 4 is a schematic cross-sectional view of a diffuse reflection structure according to an embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of another diffuse reflection structure provided in accordance with an embodiment of the present invention;
FIG. 6 is a schematic cross-sectional view of another diffuse reflection structure provided in the embodiments of the present invention;
FIG. 7 is a schematic cross-sectional view of another diffuse reflection structure provided in an embodiment of the present invention;
FIG. 8 is a schematic cross-sectional view of another diffuse reflection structure provided in accordance with an embodiment of the present invention;
fig. 9 is a schematic cross-sectional view of another display module according to an embodiment of the invention;
FIG. 10 is a schematic cross-sectional view illustrating another display module according to an embodiment of the present invention;
fig. 11 is a schematic structural diagram of a film layer formed in each step in a manufacturing method of a display module according to an embodiment of the present invention;
fig. 12 is a schematic structural diagram formed at each step of a manufacturing method of a diffuse reflection structure according to an embodiment of the present invention;
fig. 13 is a schematic view of a film structure formed in each step in another method for manufacturing a display module according to an embodiment of the invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
The embodiment of the invention provides a display module. The Display module may be, for example, an Organic Light-Emitting Diode (OLED) Display module or a Micro LED Display module. Fig. 1 is a schematic cross-sectional structure view of a display module according to an embodiment of the invention, and fig. 2 is an enlarged structural view of a region a in fig. 1. Referring to fig. 1 and 2, the display module includes an array substrate 100, a protective film layer 200, and a diffuse reflection structure 400.
Here, taking an OLED as an example, the array substrate 100 includes an array circuit layer and a light emitting device 160 disposed on the array circuit layer. The array circuit layer includes a stacked structure of a substrate 190, a buffer layer 110, an active layer 181, a gate insulating layer 120, a gate layer 182, an interlayer insulating layer 130, a source/drain pattern layer 183, and a planarization layer 140. The active layer 181, the gate layer 182, the source-drain pattern layer 183 and an insulating layer therebetween (including the gate insulating layer 120, the interlayer insulating layer 130, and the like) constitute thin film transistors TFT of the array substrate 100, at least two thin film transistors TFT constitute a pixel circuit of the array substrate 100, and the light emitting device 160 is driven to emit light through the anode 150. A pixel defining layer, a supporting pillar, and the like (a structure denoted by reference numeral 170 in fig. 1) are disposed between the plurality of light emitting devices 160. The performance of the thin film transistor TFT determines the light emitting brightness of the light emitting device 160, and thus determines the display effect of the array substrate.
The protective film layer 200 is disposed on the non-light-emitting side of the array substrate 100, and the protective film layer 200 includes a lower opening 201, and the lower opening 201 is used for transmitting light. The transmitted light can be used, for example, for underscreen fingerprint recognition or for image acquisition by an underscreen camera. Through the under-screen opening area 201, light can penetrate through the protective film layer 200 and enter the under-screen sensor outside the protective film layer 200. Illustratively, the protective film layer 200 includes a support layer 210 and a composite tape 220, which are stacked, wherein the support layer 210 is located between the array substrate 100 and the composite tape 220. The composite tape 220 may be made of, for example, black resin, which can absorb light irradiated thereto. The composite tape 220 is provided with an opening in the under-screen opening region 201 to allow light to pass through the opening onto the under-screen sensor. The supporting layer 210 covers the opening, when light irradiates the lower surface of the supporting layer 210, a part of the light is refracted to the opening and irradiates the under-screen sensor; another part of the light is reflected by the lower surface of the supporting layer 210 back into the array substrate and strikes the TFT.
In the embodiment of the invention, the diffuse reflection structure 400 is arranged corresponding to the under-screen opening area 201, the diffuse reflection structure 400 is arranged in the array substrate 100 or the protective film layer 200, and the projection of the diffuse reflection structure 400 on the non-light-emitting side of the array substrate 100 covers the projection of the under-screen opening area 201 on the non-light-emitting side of the array substrate 100; for diffusely reflecting light passing through the open-screen region 201 to reduce light irradiated to the thin film transistor TFT. Fig. 1 and 2 exemplarily show that the support layer 210 is integrated with the diffuse reflection structure 400, so as to reduce light irradiated to the thin film transistor TFT without adding a new film structure and without increasing the thickness of the display module.
The specific principle of the embodiment of the present invention is explained by taking the identification of the fingerprint under the screen as an example. When a touch subject (e.g., a finger) touches the array substrate 100, light emitted from the light emitting device 160 on the array substrate 100 penetrates the cover plate to illuminate the fingerprint texture, the reflectivity on the valleys and ridges of the fingerprint is different, and the intensity of the reflected light is different. The reflected light 510 passes through the supporting layer 210 after passing through the film layers of the array substrate 100, and is reflected again on the lower surface of the supporting layer 210 to form a reflected light 520. Due to the arrangement of the diffuse reflection structure 400, the reflected light 520 is in a diffuse reflection state, and the reflection angle is large, so that the light irradiated on the thin film transistor TFT is reduced. These reflected light 510 can also refract into the trompil of compound sticky tape 220, and then inject into sensor under the screen, and the light that the intensity is different that the sensor received the valley of fingerprint and ridge reflection under the screen, and the photocurrent that converts is of different size, can carry out fingerprint identification according to the photocurrent size. In addition, in some embodiments, the external light 530 is incident on the support layer 210 through the opening of the composite tape 220 and further incident on the TFT. Due to the arrangement of the diffuse reflection structure 400, the light 540 refracted through the support layer 210 has various angles, thereby reducing the light irradiated onto the thin film transistor TFT from another aspect.
However, in the prior art, referring to fig. 3, the light ray 510 is specularly reflected at the lower surface of the support layer 210, forming a reflected light ray 520. Since the reflected light 520 has a uniform angle, the intensity of the light irradiated to the thin film transistor TFT is large. When light irradiates the channel region of the thin film transistor TFT of the array substrate 100, the semiconductor material of the channel region generates a photoconductive effect under illumination, a photogenerated carrier is generated in a grain, and the photogenerated carrier is combined with an interface trap at a grain boundary, which affects the charge of the interface and reduces the barrier height of the grain boundary, resulting in an increase in channel current and a shift in threshold voltage of the thin film transistor TFT, so that the characteristics of the thin film transistor TFT in the display region outside the under-screen opening region 201 and the under-screen opening region 201 are different, and the region mura of the under-screen opening region 201 is formed. In addition, in some embodiments, the external light 530 is incident on the support layer 210 through the opening of the composite tape 220 and further incident on the TFT. Since the angle of the light 540 refracted by the support layer 210 is uniform, the light irradiated to the thin film transistor TFT is increased, and the mura problem in the area of the open region 201 under the screen is aggravated.
In summary, compared with the prior art, in the embodiment of the invention, the diffuse reflection structure 400 is arranged in the display module, and the diffuse reflection structure 400 is arranged corresponding to the under-screen opening region 201, so that light passing through the under-screen opening region 201 can be subjected to diffuse reflection, thereby reducing the intensity of light irradiating the thin film transistor TFT, alleviating the mura problem of the under-screen opening region 201, and improving the display effect of the display module.
In the above embodiments, the display module may be a flexible screen or a hard screen. If the display module is a flexible screen, the supporting layer 210 is a supporting film, and the supporting film is made of a flexible material, for example, the material may include: at least one of a polyethylene Terephthalate material (PET), a Polyimide material (PI), and a cyclic olefin polymer material (COP). If the display module 100 is a hard screen, the supporting layer 210 is a supporting substrate made of a hard material, such as glass.
In addition to the above embodiments, there are various installation manners of the diffuse reflection structure 400 itself, and some of them will be described below, but the present invention is not limited thereto.
Fig. 4 is a schematic cross-sectional view of a diffuse reflection structure according to an embodiment of the present invention. Referring to fig. 4, in one embodiment of the present invention, the diffuse reflection structure 400 may optionally include a base and a plurality of protrusions 420 disposed on a surface of the base 410. The plurality of protrusions 420 are spaced apart from each other, and the recesses 430 are formed between the protrusions 420 and the protrusions 420, so that the surface of the diffuse reflection structure 400 is uneven, thereby realizing diffuse reflection of light.
With continued reference to fig. 4, the cross-sectional shape of the boss 420 is optionally rectangular. Correspondingly, the cross-sectional shape of the recess 430 is also rectangular, and a plurality of rectangular holes are formed on the surface of the substrate 410. Illustratively, the diffuse reflection structure 400 is fabricated by first providing a substrate 410; then, a plurality of recesses 430 are formed on the surface of the base 410 using a photolithography process or an etching process, and accordingly, the protrusions 420 are formed between the recesses 430 and the recesses 430. The embodiment of the invention is arranged in such a way that the manufacturing method of the diffuse reflection structure 400 is simple and easy to realize.
Fig. 5 is a schematic cross-sectional view of another diffuse reflection structure according to an embodiment of the present invention. Referring to fig. 5, in one embodiment of the present invention, the cross-sectional shape of the boss 420 is optionally a semi-elliptical shape. Thus, the surface of the substrate 410 exhibits a plurality of circular arc surfaces. Illustratively, the diffuse reflection structure 400 is fabricated by first providing a substrate 410; then, a circular arc surface is formed on the surface of the substrate 410 by using a half tone mask (Halftone) process. The embodiment of the invention is arranged in such a way that the manufacturing method of the diffuse reflection structure 400 is simple and easy to realize.
Fig. 6 is a schematic cross-sectional view of another diffuse reflection structure according to an embodiment of the present invention. Referring to fig. 6, in an embodiment of the present invention, optionally, a cross-sectional shape of the protrusion 420 in a thickness direction of the display module is triangular, and correspondingly, a cross-sectional shape of the recess 430 is trapezoidal.
In other embodiments, the cross-sectional shape of the protrusion 420 in the thickness direction of the display module may also include a circle, a semicircle, an ellipse, a trapezoid, or the like; alternatively, a combination of shapes such as a rectangle, a circle, a semicircle, an ellipse, a semiellipse, a trapezoid, or a triangle may be included, that is, at least one of a rectangle, a circle, a semicircle, an ellipse, a semiellipse, a trapezoid, or a triangle may be included.
In the above embodiments, the protrusion 420 is provided on one side surface of the base 410, which is not a limitation of the present invention. For example, fig. 7 is a schematic cross-sectional view of another diffuse reflection structure provided in the embodiment of the present invention. Referring to fig. 7, in one embodiment of the present invention, optionally, protrusions 420 are provided on both side surfaces of the base 410. By such an arrangement, light irradiated on the diffuse reflection structure 400 can be diffusely reflected twice, so that the diffuse reflection effect of the diffuse reflection structure 400 can be further enhanced, and light irradiated on the thin film transistor TFT can be further reduced.
Alternatively, the cross-sectional shapes of the protrusions 420 disposed on the two side surfaces of the substrate 410 may be the same or different; the cross-sectional sizes of the protrusions 420 disposed on the two side surfaces of the substrate 410 may be the same or different; the relative positions of the protrusions 420 disposed on the two side surfaces of the substrate 410 may be the same or different.
Fig. 8 is a schematic cross-sectional view of another diffuse reflection structure according to an embodiment of the present invention. Referring to fig. 8, unlike the surface roughness of the diffuse reflection structure 400 of the previous embodiments, in one embodiment of the present invention, optionally, the diffuse reflection structure 400 includes a matrix 410 and diffuse reflection particles 440 distributed in the matrix 410; the reflectivity of the diffuse reflective particles 440 is different from the reflectivity of the matrix 410. Thus, when light is irradiated on the surface of the diffusive reflective particles 440, the angle of the reflected light is changed, and diffusive reflection is achieved. According to the embodiment of the invention, the surface shape of the diffuse reflection structure 400 is not required to be changed, and the surface of the diffuse reflection structure 400 can be arranged as required, for example, the surface is arranged to be a smooth surface, so that the film layers can be tightly attached to each other.
In the above embodiments, the shape of the diffusive reflective particles 440 is not limited by the present invention, and optionally, the shape of the diffusive reflective particles 440 includes one or a combination of a sphere, a rectangular parallelepiped, a pyramid, or a star. And, the material of the diffuse reflection particles 440 is not limited in the present embodiment, and optionally, the material of the diffuse reflection particles 440 includes at least one of air, silicone, polyethylene, acrylic resin, nano barium sulfate, silica, and calcium carbonate. However, unlike other materials, air does not need to be separately manufactured, and air bubbles (diffuse reflection particles 440) can be formed only by mixing air into the matrix 410 during the manufacturing process of the diffuse reflection structure 400.
The diffuse reflection structure 400 itself is explained in the above embodiments, and the position of the diffuse reflection structure 400 in the display module is explained below in the above embodiments, but the present invention is not limited thereto.
In fig. 1 and 2, the embodiment of the present invention provides an embodiment in which the diffuse reflection structure 400 is integrally provided with a film layer in the protective film layer 200, that is, the support layer 210 is integrally provided with the diffuse reflection structure 400. The arrangement is favorable for reducing light rays irradiating the thin film transistor TFT on the basis of not increasing a new film layer structure and the thickness of the display module. In addition, as can be seen from the foregoing embodiments, the diffuse reflection structure 400 may be set in an uneven surface state, the diffuse reflection structure 400 and the support layer 210 are integrally set, and the diffuse reflection structure 400 may be set on the lower surface of the support layer 210, so as to avoid adverse effects of the uneven surface on other film layers.
In other embodiments, the diffuse reflection structure 400 may be provided integrally with a film layer in the array substrate 100. Exemplarily, fig. 9 is a schematic cross-sectional structure view of another display module according to an embodiment of the present invention. Referring to fig. 9, in one embodiment of the present invention, optionally, the substrate 190 is provided integrally with the diffuse reflecting structure 400. The thin film transistor TFT is disposed on a side of the buffer layer 110 away from the substrate 190. The light reflected by the supporting layer 210 is transmitted to the TFT through the substrate 190, and the embodiment of the invention performs diffuse reflection on the way of the light reflection, that is, the light reflected by the supporting layer 210 is diffusely reflected at the substrate 190, thereby reducing the intensity of the light reflected back to the TFT.
In one embodiment of the present invention, the buffer layer 110 is optionally provided integrally with the diffuse reflection structure 400. Similar to the substrate 190, the light reflected by the supporting layer 210 is transmitted to the TFT through the buffer layer 110, and the embodiment of the invention performs diffuse reflection during the reflection of the light, that is, the light reflected by the supporting layer 210 is diffusely reflected at the buffer layer 110, so as to reduce the intensity of the light reflected to the TFT.
In the array substrate 100, the buffer layer 110 may be provided in a single layer or in a multilayer stacked manner. If the number of the buffer layers 110 is multiple, any one of the buffer layers 110 may be integrally provided with the diffuse reflection structure 400, or any multiple of the buffer layers 110 may be integrally provided with the diffuse reflection structure 400.
Fig. 10 is a schematic cross-sectional view illustrating a display module according to another embodiment of the invention. Referring to fig. 10, in an embodiment of the invention, optionally, the diffuse reflection structure 400 is disposed on a surface of a film layer in the array substrate 100. Unlike the previous embodiments, the diffuse reflection structure is separately manufactured in the present embodiment, so that the installation manner of the diffuse reflection structure 400 is more flexible and is not affected by the integrally installed film layer material. For example, the diffuse reflection structure 400 is disposed on a side of the substrate 190 away from the buffer layer 110, i.e., the diffuse reflection structure 400 is disposed on a lower surface of the substrate 190. In fig. 10, since the substrate 190 is attached to the support layer 210, the lower surface of the substrate 190 corresponds to the upper surface of the support layer 210. In other embodiments, the diffuse reflection structure 400 is optionally located on the substrate 190 near the buffer layer 110, i.e., the diffuse reflection structure 400 is located on the upper surface of the substrate 190 (corresponding to the lower surface of the buffer layer 110). Optionally, the diffuse reflection structure 400 is located on the buffer layer 110 on a side away from the substrate 190, i.e., the diffuse reflection structure 400 is located on the upper surface of the buffer layer 110.
In one embodiment of the present invention, the diffuse reflection structure 400 is optionally disposed on the surface of the protection film layer 200. The arrangement is equivalent to independently manufacturing the diffuse reflection structure, so that the arrangement mode of the diffuse reflection structure 400 is more flexible and cannot be influenced by the integrally arranged film layer material. For example, the diffuse reflection structure 400 is located on one side of the support layer 210 close to the composite tape 220, i.e., the diffuse reflection structure 400 is located on the upper surface of the support layer 210; alternatively, the diffuse reflection structure 400 is located on the side of the support layer 210 away from the composite tape 220, i.e., the diffuse reflection structure is located on the lower surface of the support layer 210.
The embodiment of the invention also provides a display device. The display device comprises the display module provided by any embodiment of the invention. The display device can be various intelligent terminals such as a mobile phone, a tablet personal computer, intelligent wearable equipment and an information inquiry machine. The display device comprises the display module provided by any embodiment of the invention, the technical principle and the generated technical effect are similar, and the description is omitted.
The embodiment of the invention also provides a manufacturing method of the display module, which is suitable for the display module provided by any embodiment of the invention. Fig. 11 is a schematic view of a film structure formed in each step in a manufacturing method of a display module according to an embodiment of the present invention. Referring to fig. 11, the manufacturing method of the display module includes the following steps:
s110, providing an array substrate 100, wherein a Thin Film Transistor (TFT) is arranged in a film layer of the array substrate 100.
Here, taking an OLED as an example, the array substrate 100 includes an array circuit layer and a light emitting device 160 disposed on the array circuit layer. The array circuit layer includes a stacked structure of a substrate 190, a buffer layer 110, an active layer 181, a gate insulating layer 120, a gate layer 182, an interlayer insulating layer 130, a source/drain pattern layer 183, and a planarization layer 140. The active layer 181, the gate layer 182, the source-drain pattern layer 183 and an insulating layer therebetween (including the gate insulating layer 120, the interlayer insulating layer 130, and the like) constitute thin film transistors TFT of the array substrate 100, at least two thin film transistors TFT constitute a pixel circuit of the array substrate 100, and the light emitting device 160 is driven to emit light through the anode 150. A pixel defining layer, a supporting pillar, and the like (a structure denoted by reference numeral 170 in fig. 1) are disposed between the plurality of light emitting devices 160.
And S120, forming a protective film layer 200 on the non-light-emitting side of the array substrate 100, wherein the protective film layer 200 comprises a lower screen opening region 201, and the lower screen opening region 201 is used for transmitting light.
The protective film 200 includes a lower-screen-opening region 201, and the lower-screen-opening region 201 is configured to transmit light. The transmitted light can be used, for example, for underscreen fingerprint recognition or for image acquisition by an underscreen camera. Through the under-screen opening area 201, light can penetrate through the protective film layer 200 and enter the under-screen sensor outside the protective film layer 200. Illustratively, the protective film layer 200 includes a support layer 210 and a composite tape 220, which are stacked, wherein the support layer 210 is located between the array substrate 100 and the composite tape 220. The composite tape 220 may be made of, for example, black resin, which can absorb light irradiated thereto. The composite tape 220 is provided with an opening corresponding to the position of the under-screen opening area 201, so that light can irradiate on the under-screen sensor through the opening. The supporting layer 210 covers the opening, when light irradiates the lower surface of the supporting layer 210, a part of the light is refracted to the opening and irradiates the under-screen sensor; another part of the light is reflected by the lower surface of the supporting layer 210 back to the array substrate 100 and strikes the TFT.
The array substrate 100 or the protective film layer 200 is provided with a diffuse reflection structure 400 therein; the projection of the diffuse reflection structure 400 on the non-light-emitting side of the array substrate 100 covers the projection of the under-screen opening area 201 on the non-light-emitting side of the array substrate 100, and the diffuse reflection structure 400 is used for performing diffuse reflection on light passing through the under-screen opening area 201 to reduce light irradiating to the thin film transistor TFT. Fig. 11 exemplarily shows that the support layer 210 is integrated with the diffuse reflection structure 400 to facilitate the reduction of light irradiated to the TFT without adding a new film structure and without increasing the thickness of the display module.
In summary, compared with the prior art, in the embodiment of the invention, the diffuse reflection structure 400 is arranged in the display module, and the diffuse reflection structure 400 is arranged corresponding to the under-screen opening region 201, so that light passing through the under-screen opening region 201 can be subjected to diffuse reflection, thereby reducing the intensity of light irradiating the thin film transistor TFT, alleviating the mura problem of the under-screen opening region 201, and improving the display effect of the display module.
Fig. 12 is a schematic structural diagram formed in each step by the manufacturing method of the diffuse reflection structure according to the embodiment of the present invention. Referring to fig. 12, on the basis of the above embodiment, optionally, the manufacturing method of the diffuse reflection structure includes the following steps:
s121, providing a substrate 410.
The base body can be a film structure in the array substrate or the protective film, such as a film structure of a support layer, a substrate, or a buffer layer. The substrate may also be a film structure separately disposed, and the material of the substrate may be polyethylene terephthalate material, polyimide material, cyclic olefin polymer material, silicon nitride material, silicon oxide material, silicon oxynitride material, or the like.
S122, etching is carried out on the surface of the substrate 410 to form the convex part 420.
The plurality of protrusions 420 are spaced apart from each other, and the recesses 430 are formed between the protrusions 420 and the protrusions 420, so that the surface of the diffuse reflection structure 400 is uneven, thereby realizing diffuse reflection of light. The embodiment of the invention is arranged in such a way that the manufacturing method of the diffuse reflection structure 400 is simple and easy to realize.
Fig. 13 is a schematic view of a film structure formed in each step in another method for manufacturing a display module according to an embodiment of the invention. Referring to fig. 13, on the basis of the foregoing embodiments, optionally, the manufacturing method of the display module includes the following steps:
s210, providing the array substrate 100, wherein a Thin Film Transistor (TFT) is arranged in a film layer of the array substrate 100.
And S220, forming a supporting layer 210 on the non-light-emitting side of the array substrate 100.
And S230, etching the support layer 210 corresponding to the under-screen opening area 201 to form the diffuse reflection structure 400.
And S240, attaching the composite adhesive tape 220 to one side of the support layer 210 far away from the array substrate 100.
The composite tape 220 includes an opening exposing the diffuse reflection structure 400. The embodiment of the invention is arranged in such a way, the diffuse reflection structure 400 is arranged on one side of the support layer 210 far away from the array substrate 100, the manufacturing method is simple, the cost is low, the implementation is easy, and other film layers in the display module are not affected by the arrangement.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A display module, comprising:
the array substrate is internally provided with a thin film transistor;
the protective film layer is arranged on the non-light-emitting side of the array substrate; the protective film layer comprises a lower screen opening area which is used for transmitting light;
the diffuse reflection structure is arranged in the array substrate or the protective film layer, and the projection of the diffuse reflection structure on the non-light-emitting side of the array substrate covers the projection of the under-screen opening area on the non-light-emitting side of the array substrate; the diffuse reflection structure is used for performing diffuse reflection on light rays passing through the open hole area under the screen.
2. The display module of claim 1, wherein the protective film layer comprises:
the composite adhesive tape is provided with an opening, and the opening is positioned in the opening area under the screen;
the supporting layer is positioned between the array substrate and the composite adhesive tape; the support layer covers the opening.
3. The display module of claim 2, wherein the support layer is integral with the diffuse reflective structure;
alternatively, the diffuse reflection structure is arranged on the surface of the support layer.
4. The display module of claim 1, wherein the array substrate comprises:
a substrate;
the buffer layer is positioned on one side, far away from the protective film layer, of the substrate, and the thin film transistor is arranged on one side, far away from the substrate, of the buffer layer.
5. The display module of claim 4, wherein the substrate is integral with the diffuse reflective structure; or the buffer layer and the diffuse reflection structure are integrally arranged;
or the diffuse reflection structure is arranged on the surface of the substrate or the buffer layer.
6. The display module according to any one of claims 1 to 5, wherein the diffuse reflection structure comprises a substrate and a plurality of protrusions arranged on the surface of the substrate;
optionally, the protrusion is arranged on one side surface of the base body; or the convex parts are arranged on the two side surfaces of the base body.
7. The display module of claim 6, wherein a cross-sectional shape of the protrusion in a thickness direction of the display module comprises at least one of a rectangle, a circle, a semicircle, an ellipse, a semi-ellipse, a trapezoid, or a triangle.
8. The display module according to any one of claims 1-5, wherein the diffuse reflective structure comprises a matrix and diffusely reflective particles distributed within the matrix; the reflectivity of the diffuse reflection particles is different from that of the matrix;
optionally, the shape of the diffuse reflective particles comprises one or a combination of a sphere, a cuboid, a pyramid, or a star;
optionally, the material of the diffuse reflective particulates comprises at least one of air, silicone, polyethylene, acrylic, nano barium sulfate, silica, and calcium carbonate.
9. A manufacturing method of a display module is characterized by comprising the following steps:
providing an array substrate, wherein a film layer of the array substrate is internally provided with a thin film transistor;
forming a protective film layer on the non-light-emitting side of the array substrate, wherein the protective film layer comprises a screen lower opening area, and the screen lower opening area is used for transmitting light;
wherein, a diffuse reflection structure is arranged in the array substrate or the protective film layer; the projection of the diffuse reflection structure on the non-light-emitting side of the array substrate covers the projection of the under-screen opening area on the non-light-emitting side of the array substrate; the diffuse reflection structure is used for performing diffuse reflection on light rays passing through the open hole area under the screen.
10. The method for manufacturing a display module according to claim 9, wherein the method for manufacturing the diffuse reflection structure comprises:
providing a substrate;
and etching the surface of the substrate to form the convex part.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110105970.8A CN112864210B (en) | 2021-01-26 | Display module and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110105970.8A CN112864210B (en) | 2021-01-26 | Display module and manufacturing method thereof |
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| CN112864210A true CN112864210A (en) | 2021-05-28 |
| CN112864210B CN112864210B (en) | 2024-08-02 |
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| CN114267685A (en) * | 2021-12-14 | 2022-04-01 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| CN114512520A (en) * | 2022-02-07 | 2022-05-17 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
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| US20190288017A1 (en) * | 2017-06-12 | 2019-09-19 | Hefei Boe Optoelectronics Technology Co., Ltd. | Array substrate and manufacturing method therefor, display panel, display device |
| CN111370367A (en) * | 2020-03-27 | 2020-07-03 | 福建华佳彩有限公司 | Display panel and manufacturing method |
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| US20190288017A1 (en) * | 2017-06-12 | 2019-09-19 | Hefei Boe Optoelectronics Technology Co., Ltd. | Array substrate and manufacturing method therefor, display panel, display device |
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