CN112863387A

CN112863387A - Luminous display module

Info

Publication number: CN112863387A
Application number: CN202110260561.5A
Authority: CN
Inventors: 金豫浙
Original assignee: Guangling College Of Yangzhou University
Current assignee: Guangling College Of Yangzhou University
Priority date: 2021-03-10
Filing date: 2021-03-10
Publication date: 2021-05-28

Abstract

The invention discloses a luminous display module, which comprises a plurality of luminous unit arrays, wherein each luminous unit array comprises a plurality of inorganic light-emitting diode chips, through holes are regularly distributed on a support plate, a pixel definition layer is arranged around the through holes on the light emergent side of the support plate, and the pixel definition layer is positioned among the inorganic light-emitting diode chips; the first metal layer is positioned at the light emergent side of the carrier plate, the second metal layer is positioned at the back of the carrier plate, and the second metal layer is injected into the carrier plate through hole but does not penetrate to the light emergent side of the carrier plate; the first welding layer is in contact with the first metal layer positioned on the light emergent side of the carrier plate, and the second welding layer is in contact with the second metal layer in the through hole through the carrier plate through hole; the external contact surfaces of the first welding layer and the second welding layer are positioned at different heights on the same side, and a height difference is formed between the first welding layer and the second welding layer. The invention can facilitate the positioning of the LED chip when the LED chip is transferred to the carrier plate, and is beneficial to improving and increasing the yield of batch transfer.

Description

Luminous display module

Technical Field

The invention relates to the field of display devices, in particular to a light-emitting display module.

Background

The current near-field display technology is mainly LCD and OLED technology, the OLED technology is developed rapidly in small-size markets represented by mobile phone application display screens, but in large-size markets of 50-65 'and over 100' which mainly use LCDs, the OLED still has a plurality of obstacles to market due to the service life of blue light spots and the overall cost. In addition, the requirements of the OLED on process equipment are greatly increased when the PPI is high (> 1000), and the current situation is difficult to break through. The LCD, as a passive display technology of liquid crystal, has defects in display effects, such as brightness, refresh rate, viewing angle, etc., and the liquid crystal needs to be protected by a glass panel, and a large-sized uniform glass panel is still a difficult problem to be overcome in the industry.

In the far field display aspect, two technologies of LED and DLP are mainly used; DLP technology has been limited by the development of other display technologies due to the disadvantages of poor contrast, long life and high maintenance cost. The LED display technology was first applied in the field of outdoor display. Under the development of inorganic compound semiconductor material technology and the progress of LED chip technology, indoor display and small-pitch ultra-high-definition display are being applied on a large scale in the market. The LED industry follows the Heizz law, the chip efficiency is improved and the process of miniaturization is advanced, so that the Mini/micro LED display technology is becoming the trend of a novel display field in the future. The Micro LED is mainly formed by carrying out Micro and array processing on a traditional LED chip by a Micro processing technology, then transferring a crystal film to a circuit board in batches by a mass transfer technology, manufacturing a protective layer by physical deposition, and finally completing packaging. In the prior art, due to the fact that the size of a chip is small, positioning is difficult during transferring, and batch transferring efficiency is low.

Disclosure of Invention

The invention aims to overcome the defects of the prior art, and provides a light-emitting display module which is beneficial to transfer and positioning of large-batch micro LED chips, so that the yield is improved.

The purpose of the invention is realized as follows: a light-emitting display module comprises a plurality of light-emitting unit arrays, wherein each light-emitting unit array comprises a plurality of inorganic light-emitting diode chips, and each inorganic light-emitting diode chip comprises a support plate, a first welding layer, a second welding layer, a first metal layer and a second metal layer; through holes are regularly distributed on the carrier plate, a pixel defining layer is arranged around the through holes on the light emergent side of the carrier plate, and the pixel defining layer is positioned between the inorganic light-emitting diode chips; the first metal layer is positioned on the light emergent side of the carrier plate, the second metal layer is positioned on the back surface of the carrier plate, and the second metal layer is injected into the carrier plate through hole but does not penetrate through the light emergent side of the carrier plate; the first welding layer is in contact with a first metal layer positioned on the light emergent side of the carrier plate, and the second welding layer is in contact with a second metal layer in the through hole through the carrier plate through hole; the external contact surfaces of the first welding layer and the second welding layer are positioned at different heights on the same side, and a height difference is formed between the first welding layer and the second welding layer; the carrier plate is further attached to the electric driving substrate, and the electric driving substrate is electrically connected with the carrier plate through the second metal layer.

By adopting the technical scheme, compared with the prior art, the invention has the beneficial effects that: the carrier plate is provided with the through hole, the first metal layer is positioned on the light emergent side of the carrier plate, the second metal layer is positioned on the back surface of the carrier plate, the second metal layer is injected into the carrier plate through hole, the first welding layer is contacted with the first metal layer positioned on the light emergent side of the carrier plate, and the second welding layer is contacted with the second metal layer in the through hole through the carrier plate through hole; the external contact surfaces of the first welding layer and the second welding layer are positioned at different heights at the same side to form a height difference, the concave-convex result facilitates the positioning of small chips, and meanwhile, the pixel definition layer is arranged between the electrodeless LED chips, so that the light interference is reduced, the consistency of light is enhanced, the transfer positioning of large-batch tiny LED chips is facilitated, and the yield is improved.

In order to facilitate the positioning of the small chip, reduce the processing cost and reduce the etching time, the height difference H between the first welding layer and the second welding layer is within the range of 15 mu m and less than or equal to H and less than or equal to 100 mu m.

In order to ensure the display effect of the light-emitting display module, the light-emitting unit array comprises a transverse array and a longitudinal array, and the first welding layers of all the inorganic light-emitting diode chips on the transverse array and the longitudinal array are electrically connected with each other through a first metal layer.

In order to ensure the diversity of the light-emitting display module, the inorganic light-emitting diode chip comprises a single-color or three-color inorganic light-emitting diode chip.

For use in displays and backlights, the monochromatic inorganic light emitting diode chip emits light in any 5nm range of 380-680nm, so as to increase the illumination in low light source environment.

In order to enhance the display color performance of the light-emitting display module, the three-color inorganic light-emitting diode chip includes a light-emitting diode chip with a light-emitting wavelength of 455-475nm, a light-emitting diode chip with a light-emitting wavelength of 525-545nm, and a light-emitting diode chip with a light-emitting wavelength of 615-625 nm.

In order to make the light-emitting display module have better light transmission and stronger stability, the carrier plate is made of transparent electric insulating materials.

In order to reduce the interference of light and enhance the uniformity of light, and meanwhile, facilitate the positioning of a chip, the pixel defining layer adopts a transparent electric insulating material.

In order to provide light emitting control for the light emitting unit, the electrically driving substrate is a thin film transistor structure layer, and the second metal layer is electrically connected with a source electrode or a drain electrode in the thin film transistor structure layer.

In order to realize a light-emitting display module with better light transmission, the channel material in the thin film transistor structure layer is a compound semiconductor material or an organic semiconductor material.

Drawings

Fig. 1 is a schematic front view of a first embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view along the direction AA' of a light emitting display module according to an embodiment.

Fig. 3 is a schematic diagram of the distribution of the positions of the first metal layer and the pixel defining layer in the region Q of fig. 2.

Fig. 4 is a schematic diagram of the position distribution of the first metal layer and the pixel defining layer in the region Q of fig. 2.

Fig. 5 is a schematic diagram of the position distribution of the first metal layer and the pixel defining layer in the region Q of fig. 2.

Fig. 6 is a schematic front view illustrating a second embodiment of the present invention.

FIG. 7 is a schematic cross-sectional view of the second light-emitting display module of the embodiment in the direction of BB'.

Fig. 8 is a schematic distribution diagram of the first metal layer and the pixel defining layer in the region R of fig. 7.

Fig. 9 is a cross-sectional view of a distribution of a first metal layer and a pixel definition layer of a three-color electrodeless light emitting diode chip.

Fig. 10 is a schematic distribution diagram of the first metal layer and the pixel defining layer in the region R of fig. 7.

The package structure comprises a 000 carrier plate, a 001a first metal layer, a 001b second metal layer, a 002a first welding layer, a 002b second welding layer, a 003 pixel defining layer, a 004 sealing layer, a 100 electrical driving substrate, a 10a red inorganic light emitting diode chip, a 10b green inorganic light emitting diode chip and a 10c blue inorganic light emitting diode chip.

Detailed Description

In the first embodiment, as shown in fig. 1, a light emitting display module includes a plurality of light emitting unit arrays, each of the light emitting unit arrays includes a plurality of single-color electrodeless light emitting diode chips, the light emitting wavelength of each of the single-color electrodeless light emitting diode chips is within an arbitrary 5nm range of 380-680nm, and the light emitting wavelength of a more preferable single-color electrodeless light emitting diode chip is within an arbitrary 5nm range of 400-460 nm; in the embodiment, the monochromatic electrodeless LED chip is a gallium nitride LED chip 10c with the wavelength of 455 nm; the carrier plate 000 is a transparent electrically insulating material, preferably an ultra thin glass with a thickness of less than 0.5 mm. As shown in fig. 2, the inorganic light emitting diode chip includes a carrier plate 000, a first solder layer 002a, a second solder layer 002b, a first metal layer 001a and a second metal layer 001 b; the carrier 000 is etched to form through holes, the through holes are regularly arranged on the carrier 000, the first metal layer 001a is located around the upper surface of the through hole of the carrier 000, i.e. the first metal layer 001a is located at the light-emitting side of the carrier 000, and is generally disposed at one side of the upper surface of the carrier 000 in a symmetrical continuous or symmetrical discontinuous manner, the second metal layer 001b is located at the back of the carrier, the second metal layer 001b is injected into the through hole of the carrier 000 but does not penetrate to the light-emitting side of the carrier, and a pixel defining layer 003 is disposed around the through hole at the light-emitting side of the carrier 000, wherein the pixel defining layer 003 is the same as the carrier 000 in material and is a transparent electrically insulating material, in this example, ultra-thin glass, the pixel defining layer 003 is located between the inorganic light emitting diode chips 10c, for better illustrating the relative positions of the first metal layer 001a, as shown in fig. 3-5, a schematic top view of the carrier 000 without bonding the led chip is shown, in fig. 3, the first metal layers 001a are discontinuous metal layers disposed around the through holes, and the adjacent first metal layers 001a are connected by a metal layer on one side, the number of connections is not limited to the three regions shown in the figure, and the pixel definition layer 003 is disposed on two sides of the through hole with the second metal layer 001 b; fig. 4 is a metal ring in which the first metal layer 001a is continuously closed around the via hole, and the pixel defining layer 003 and the second metal layer 001b are the same as those in fig. 3; the pixel definition layer 003 shown in fig. 5 is a continuous closed pattern surrounding the through hole, and the first metal layer 001a is also a continuous closed metal ring surrounding the through hole, in this example, the pixel definition layer 003 is a small bump formed by etching the carrier 000; according to the carrier board structure of fig. 3-5, the first bonding layer 002a and the second bonding layer 002b of the led chip are located on one side of the insulating transparent substrate, the led chip 10c further includes an electron conductive type semiconductor layer, a light emitting active layer, and a hole conductive type semiconductor layer, and the first bonding layer 002a and the second bonding layer 002b are electrically connected to the electron conductive type semiconductor layer and the hole conductive type semiconductor layer, respectively, which is not described herein; the external contact surfaces of the first welding layer 002a and the second welding layer 002b are positioned at the same side with different heights, a height difference is formed between the first welding layer 002a and the second welding layer 002b, the height difference H between the first welding layer and the second welding layer is within the range of 15 mu m and less than or equal to H and less than or equal to 100 mu m, and more preferably, the height difference H is within the range of 30 mu m and less than or equal to H and less than or equal to 100 mu m; in this embodiment, the height difference between the first bonding layer 002a and the second bonding layer 002b is 60 μm, and the first bonding layer 002a and the first metal layer 001a and the second bonding layer 002b of the gan led chip 10c are in contact with each other and bonded by ultrasonic hot pressing in the through holes filled with the second metal layer 001b and the pixel defining layer 003, and the bonded light emitting display module passes the test and is applied with the sealing layer 004 on the front surface, that is, the potting glue layer; the control of the light emitting unit of the light emitting display module needs to be performed by attaching the electrically driven substrate 100, the electrically driven substrate 100 is a low temperature polysilicon thin film transistor structure layer, the second metal layer 001b is connected with a transistor source metal, and more preferably, is an IGZO communication thin film transistor or a thin film transistor of a channel of an organic semiconductor material, so as to realize a light emitting display module with better light transmittance, a distribution structure of the thin film transistors, and no limitation is required in the embodiment of the present invention, which is not described herein in detail, the light emitting unit array includes a transverse array and a longitudinal array, and the first welding layers 002a of all the inorganic light emitting diode chips on the transverse array and the longitudinal array are electrically connected with each other through the first metal layer 001 a.

In a second embodiment, fig. 6 is a light emitting display module, which includes a plurality of light emitting unit arrays, each of which includes a plurality of three-color electrodeless led chips, including a red inorganic led chip 10a with a wavelength of 620nm, a gallium nitride green led chip 10b with a wavelength of 525nm, and a gallium nitride blue led chip 10c with a wavelength of 465 nm; more preferably 10a red light emitting diode chip of sapphire substrate; the carrier 000 is a transparent electrically insulating material, which may be a PET film or a PI polyimide film in this embodiment, as shown in fig. 7, the three-color

electrodeless led chip

10a, 10b, 10c includes the carrier 000, a first solder layer 002a, a second solder layer 002b, a first metal layer 001a, and a second metal layer 001 b; the carrier plate 000 is etched to form through holes, the through holes are regularly distributed on the carrier plate 000, the first metal layer 001a is positioned on the light emergent side of the carrier plate 000, the second metal layer 001b is positioned on the back of the carrier plate, the second metal layer 001b is injected into the through holes of the carrier plate 000 but does not penetrate to the light emergent side of the carrier plate, a pixel defining layer 003 is arranged around the through holes on the light emergent side of the carrier plate 000, the first welding layer 002a is in contact with the first metal layer 001a positioned on the light emergent side of the carrier plate 000, and the second welding layer 002b is in contact with the second metal layer 001b in the through; the external contact surfaces of the first welding layer 002a and the second welding layer 002b are positioned at the same side and different heights, and a height difference is formed between the first welding layer 002a and the second welding layer 002 b; the height difference H between the first and second bonding layers is in a range of 15 μm or more and H or less than 100 μm, more preferably in a range of 30 μm or more and H or less than 100 μm, in this embodiment, the height difference between the first bonding layer 002a and the second bonding layer 002b is 100 μm, in fig. 7, the first bonding layer 002a of the three-color

electrodeless led chip

10a, 10b, 10c is bonded to the first metal layer 001a on the carrier 000 and electrically connected to each other, and the dashed-line region R near the first metal layer 001a on the carrier 000 is illustrated and explained by fig. 8-10; fig. 8 shows that the first metal layer 001a penetrates through the bottom of the pixel defining layer 003 to be connected to the adjacent first metal layer 001a, so that the first soldering layers 002a of the three-color

electrodeless led chips

10a, 10b and 10c are electrically connected to each other to form a common electrode; the pixel definition layer 003 is an insulating spacer layer or a spacer tape, and may be a fiber filament not limited to SiO 2; fig. 9 illustrates another interconnection manner of the first metal layers 001a, in which the pixel defining layer 003 is made of the same material as the carrier 000 and is made of a transparent electrically insulating material, and may be a PET film or a PI polyimide film in this embodiment, the pixel defining layer may be formed by stamping, and the first metal layer 001a is turned over the top of the pixel defining layer 003 to be connected to the adjacent first metal layer 001a, so that the first soldering layers 002a of the three-color

electrodeless led chips

10a, 10b, and 10c are electrically connected to each other to form a common electrode; as shown in fig. 10, the first metal layer 001a covers the upper surface of the pixel defining layer 003; after the three-color electrodeless light

emitting diode chips

10a, 10b and 10c are welded in a common-pole mode, longitudinal or transverse light emitting units of the light emitting display module can also form common-pole connection in sequence; the sealing layer 004 covers the surface of the light emitting unit to form mechanical protection and moisture sealing, the light emitting control of the light emitting unit is provided by the 100 TFT substrate and is attached to the side of the second metal layer 001b of the carrier substrate 000, the second metal layer 001b is electrically connected to the source or drain of the TFT structure layer, preferably, the TFT structure of the channel of the organic semiconductor is manufactured on the TFT structure layer of the substrate made of the same material as the carrier substrate 000, such as a PET film.

The present invention is not limited to the above-mentioned embodiments, and based on the technical solutions disclosed in the present invention, those skilled in the art can make some substitutions and modifications to some technical features without creative efforts according to the disclosed technical contents, and these substitutions and modifications are all within the protection scope of the present invention.

Claims

1. A luminous display module comprises a plurality of luminous unit arrays and is characterized in that each luminous unit array comprises a plurality of inorganic light emitting diode chips, and each inorganic light emitting diode chip comprises a carrier plate, a first welding layer, a second welding layer, a first metal layer and a second metal layer; through holes are regularly distributed on the carrier plate, a pixel defining layer is arranged around the through holes on the light emergent side of the carrier plate, and the pixel defining layer is positioned between the inorganic light-emitting diode chips; the first metal layer is positioned on the light emergent side of the carrier plate, the second metal layer is positioned on the back surface of the carrier plate, and the second metal layer is injected into the carrier plate through hole but does not penetrate through the light emergent side of the carrier plate; the first welding layer is in contact with a first metal layer positioned on the light emergent side of the carrier plate, and the second welding layer is in contact with a second metal layer in the through hole through the carrier plate through hole; the external contact surfaces of the first welding layer and the second welding layer are positioned at different heights on the same side, and a height difference is formed between the first welding layer and the second welding layer; the carrier plate is further attached to the electric driving substrate, and the electric driving substrate is electrically connected with the carrier plate through the second metal layer.

2. The emissive display module of claim 1, wherein the height difference H between the first and second solder layers is in the range of 15 μm H100 μm.

3. The illumination display module of claim 1, wherein the array of light-emitting units comprises a lateral array and a vertical array, and the first bonding layers of all the inorganic light-emitting diode chips on the lateral array and the vertical array are electrically connected to each other through the first metal layer.

4. The light-emitting display module of claim 1, wherein the inorganic light-emitting diode chips comprise single-color or three-color inorganic light-emitting diode chips.

5. The light-emitting display module as claimed in claim 4, wherein the light-emitting wavelength of the single-color inorganic light-emitting diode chip is within any 5nm range of 380-680 nm.

6. The light-emitting display module as claimed in claim 4, wherein the three-color inorganic LED chips comprise an LED chip with a light-emitting wavelength of 455-475nm, an LED chip with a light-emitting wavelength of 525-545nm, and an LED chip with a light-emitting wavelength of 615-625 nm.

7. The illumination display module according to claim 1, wherein the carrier is made of a transparent electrically insulating material.

8. The light-emitting display module according to claim 1, wherein the pixel defining layer is made of a transparent electrically insulating material.

9. The light-emitting display module according to claim 1, wherein the electrically-driven substrate is a thin film transistor structure layer, and the second metal layer is electrically connected to a source or a drain of the thin film transistor structure layer.

10. The light-emitting display module according to claim 9, wherein the channel material in the thin film transistor structure layer is a compound semiconductor material or an organic semiconductor material.