CN112859552B - Application of vanadium oxide corrosion inhibition fluorine-containing stripping liquid - Google Patents
Application of vanadium oxide corrosion inhibition fluorine-containing stripping liquid Download PDFInfo
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- CN112859552B CN112859552B CN202110155936.1A CN202110155936A CN112859552B CN 112859552 B CN112859552 B CN 112859552B CN 202110155936 A CN202110155936 A CN 202110155936A CN 112859552 B CN112859552 B CN 112859552B
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- organic solvent
- mass fraction
- ether
- fluoride
- acid
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- 238000005260 corrosion Methods 0.000 title claims abstract description 53
- 230000007797 corrosion Effects 0.000 title claims abstract description 53
- 239000007788 liquid Substances 0.000 title claims abstract description 24
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910001935 vanadium oxide Inorganic materials 0.000 title claims abstract description 23
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910052731 fluorine Inorganic materials 0.000 title claims abstract description 22
- 239000011737 fluorine Substances 0.000 title claims abstract description 22
- 230000005764 inhibitory process Effects 0.000 title claims abstract description 22
- 239000003960 organic solvent Substances 0.000 claims abstract description 85
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 38
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229920001577 copolymer Polymers 0.000 claims abstract description 21
- 239000003112 inhibitor Substances 0.000 claims abstract description 21
- 229920002554 vinyl polymer Polymers 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 20
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 150000001408 amides Chemical class 0.000 claims abstract description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 17
- 150000003462 sulfoxides Chemical class 0.000 claims abstract description 17
- 150000003457 sulfones Chemical class 0.000 claims abstract description 16
- 239000008139 complexing agent Substances 0.000 claims abstract description 15
- 239000002994 raw material Substances 0.000 claims abstract description 12
- 229920002359 Tetronic® Polymers 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 239000011538 cleaning material Substances 0.000 claims abstract 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 18
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 claims description 13
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 12
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical group O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 claims description 12
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 10
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 10
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 8
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 7
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 7
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 claims description 7
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 claims description 6
- 239000002202 Polyethylene glycol Substances 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 6
- 229920001223 polyethylene glycol Polymers 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 6
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims description 6
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 claims description 6
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 5
- -1 N-diethylformamide Chemical compound 0.000 claims description 5
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- KODLUXHSIZOKTG-UHFFFAOYSA-N 1-aminobutan-2-ol Chemical compound CCC(O)CN KODLUXHSIZOKTG-UHFFFAOYSA-N 0.000 claims description 4
- MPGVRLGIUWFEPA-UHFFFAOYSA-N 1-aminooctan-2-ol Chemical compound CCCCCCC(O)CN MPGVRLGIUWFEPA-UHFFFAOYSA-N 0.000 claims description 4
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 4
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 4
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 4
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 claims description 4
- WXHLLJAMBQLULT-UHFFFAOYSA-N 2-[[6-[4-(2-hydroxyethyl)piperazin-1-yl]-2-methylpyrimidin-4-yl]amino]-n-(2-methyl-6-sulfanylphenyl)-1,3-thiazole-5-carboxamide;hydrate Chemical compound O.C=1C(N2CCN(CCO)CC2)=NC(C)=NC=1NC(S1)=NC=C1C(=O)NC1=C(C)C=CC=C1S WXHLLJAMBQLULT-UHFFFAOYSA-N 0.000 claims description 4
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 4
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 4
- PMNLUUOXGOOLSP-UHFFFAOYSA-N 2-mercaptopropanoic acid Chemical compound CC(S)C(O)=O PMNLUUOXGOOLSP-UHFFFAOYSA-N 0.000 claims description 4
- HCGFUIQPSOCUHI-UHFFFAOYSA-N 2-propan-2-yloxyethanol Chemical compound CC(C)OCCO HCGFUIQPSOCUHI-UHFFFAOYSA-N 0.000 claims description 4
- LVYXPOCADCXMLP-UHFFFAOYSA-N 3-butoxy-n,n-dimethylpropanamide Chemical compound CCCCOCCC(=O)N(C)C LVYXPOCADCXMLP-UHFFFAOYSA-N 0.000 claims description 4
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 claims description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims description 4
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 4
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 4
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 4
- 229940074391 gallic acid Drugs 0.000 claims description 4
- 235000004515 gallic acid Nutrition 0.000 claims description 4
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 4
- 229940102253 isopropanolamine Drugs 0.000 claims description 4
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 claims description 4
- PJUIMOJAAPLTRJ-UHFFFAOYSA-N monothioglycerol Chemical compound OCC(O)CS PJUIMOJAAPLTRJ-UHFFFAOYSA-N 0.000 claims description 4
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 claims description 4
- KERBAAIBDHEFDD-UHFFFAOYSA-N n-ethylformamide Chemical compound CCNC=O KERBAAIBDHEFDD-UHFFFAOYSA-N 0.000 claims description 4
- UKODFQOELJFMII-UHFFFAOYSA-N pentamethyldiethylenetriamine Chemical compound CN(C)CCN(C)CCN(C)C UKODFQOELJFMII-UHFFFAOYSA-N 0.000 claims description 4
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims description 4
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 4
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 claims description 4
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 claims description 3
- FHCUSSBEGLCCHQ-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;fluoride Chemical compound [F-].C[N+](C)(C)CCO FHCUSSBEGLCCHQ-UHFFFAOYSA-M 0.000 claims description 3
- YCGHZPCZCOSQKQ-UHFFFAOYSA-N 3-(2-ethylhexoxy)-n,n-dimethylpropanamide Chemical compound CCCCC(CC)COCCC(=O)N(C)C YCGHZPCZCOSQKQ-UHFFFAOYSA-N 0.000 claims description 3
- KRGXWTOLFOPIKV-UHFFFAOYSA-N 3-(methylamino)propan-1-ol Chemical compound CNCCCO KRGXWTOLFOPIKV-UHFFFAOYSA-N 0.000 claims description 3
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 claims description 3
- KFSZGBHNIHLIAA-UHFFFAOYSA-M benzyl(trimethyl)azanium;fluoride Chemical compound [F-].C[N+](C)(C)CC1=CC=CC=C1 KFSZGBHNIHLIAA-UHFFFAOYSA-M 0.000 claims description 3
- 239000007795 chemical reaction product Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- MOVBJUGHBJJKOW-UHFFFAOYSA-N methyl 2-amino-5-methoxybenzoate Chemical compound COC(=O)C1=CC(OC)=CC=C1N MOVBJUGHBJJKOW-UHFFFAOYSA-N 0.000 claims description 3
- QSUJAUYJBJRLKV-UHFFFAOYSA-M tetraethylazanium;fluoride Chemical compound [F-].CC[N+](CC)(CC)CC QSUJAUYJBJRLKV-UHFFFAOYSA-M 0.000 claims description 3
- POSYVRHKTFDJTR-UHFFFAOYSA-M tetrapropylazanium;fluoride Chemical compound [F-].CCC[N+](CCC)(CCC)CCC POSYVRHKTFDJTR-UHFFFAOYSA-M 0.000 claims description 3
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 claims description 2
- UYBWIEGTWASWSR-UHFFFAOYSA-N 1,3-diaminopropan-2-ol Chemical compound NCC(O)CN UYBWIEGTWASWSR-UHFFFAOYSA-N 0.000 claims description 2
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 claims description 2
- JRLAKNMVEGRRGK-UHFFFAOYSA-N 1-(ethylamino)butan-2-ol Chemical compound CCNCC(O)CC JRLAKNMVEGRRGK-UHFFFAOYSA-N 0.000 claims description 2
- RDTCWQXQLWFJGY-UHFFFAOYSA-N 1-(methylamino)butan-2-ol Chemical compound CCC(O)CNC RDTCWQXQLWFJGY-UHFFFAOYSA-N 0.000 claims description 2
- LXQMHOKEXZETKB-UHFFFAOYSA-N 1-amino-2-methylpropan-2-ol Chemical compound CC(C)(O)CN LXQMHOKEXZETKB-UHFFFAOYSA-N 0.000 claims description 2
- VTRRCXRVEQTTOE-UHFFFAOYSA-N 1-methylsulfinylethane Chemical compound CCS(C)=O VTRRCXRVEQTTOE-UHFFFAOYSA-N 0.000 claims description 2
- JEXYCADTAFPULN-UHFFFAOYSA-N 1-propylsulfonylpropane Chemical compound CCCS(=O)(=O)CCC JEXYCADTAFPULN-UHFFFAOYSA-N 0.000 claims description 2
- QHBWSLQUJMHGDB-UHFFFAOYSA-N 2,3-diaminopropan-1-ol Chemical compound NCC(N)CO QHBWSLQUJMHGDB-UHFFFAOYSA-N 0.000 claims description 2
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 2
- HRWADRITRNUCIY-UHFFFAOYSA-N 2-(2-propan-2-yloxyethoxy)ethanol Chemical compound CC(C)OCCOCCO HRWADRITRNUCIY-UHFFFAOYSA-N 0.000 claims description 2
- XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 claims description 2
- LJDSTRZHPWMDPG-UHFFFAOYSA-N 2-(butylamino)ethanol Chemical compound CCCCNCCO LJDSTRZHPWMDPG-UHFFFAOYSA-N 0.000 claims description 2
- BMTAVLCPOPFWKR-UHFFFAOYSA-N 2-(ethylamino)butan-1-ol Chemical compound CCNC(CC)CO BMTAVLCPOPFWKR-UHFFFAOYSA-N 0.000 claims description 2
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 claims description 2
- SGBGCXQCQVUHNE-UHFFFAOYSA-N 2-(ethylamino)propan-1-ol Chemical compound CCNC(C)CO SGBGCXQCQVUHNE-UHFFFAOYSA-N 0.000 claims description 2
- HSHIHFMFJLIQDN-UHFFFAOYSA-N 2-(methylamino)butan-1-ol Chemical compound CCC(CO)NC HSHIHFMFJLIQDN-UHFFFAOYSA-N 0.000 claims description 2
- PXWASTUQOKUFKY-UHFFFAOYSA-N 2-(methylamino)propan-1-ol Chemical compound CNC(C)CO PXWASTUQOKUFKY-UHFFFAOYSA-N 0.000 claims description 2
- BCLSJHWBDUYDTR-UHFFFAOYSA-N 2-(propylamino)ethanol Chemical compound CCCNCCO BCLSJHWBDUYDTR-UHFFFAOYSA-N 0.000 claims description 2
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 claims description 2
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- FETMDPWILVCFLL-UHFFFAOYSA-N 2-[2-(2-propan-2-yloxyethoxy)ethoxy]ethanol Chemical compound CC(C)OCCOCCOCCO FETMDPWILVCFLL-UHFFFAOYSA-N 0.000 claims description 2
- VPSSPAXIFBTOHY-UHFFFAOYSA-N 2-amino-4-methylpentan-1-ol Chemical compound CC(C)CC(N)CO VPSSPAXIFBTOHY-UHFFFAOYSA-N 0.000 claims description 2
- JCBPETKZIGVZRE-UHFFFAOYSA-N 2-aminobutan-1-ol Chemical compound CCC(N)CO JCBPETKZIGVZRE-UHFFFAOYSA-N 0.000 claims description 2
- DPEOTCPCYHSVTC-UHFFFAOYSA-N 2-aminohexan-1-ol Chemical compound CCCCC(N)CO DPEOTCPCYHSVTC-UHFFFAOYSA-N 0.000 claims description 2
- BKMMTJMQCTUHRP-UHFFFAOYSA-N 2-aminopropan-1-ol Chemical compound CC(N)CO BKMMTJMQCTUHRP-UHFFFAOYSA-N 0.000 claims description 2
- KJJPLEZQSCZCKE-UHFFFAOYSA-N 2-aminopropane-1,3-diol Chemical compound OCC(N)CO KJJPLEZQSCZCKE-UHFFFAOYSA-N 0.000 claims description 2
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- FBXBSCUQZWUZDD-UHFFFAOYSA-N 3-(ethylamino)propan-1-ol Chemical compound CCNCCCO FBXBSCUQZWUZDD-UHFFFAOYSA-N 0.000 claims description 2
- LXHUAPWNXDAINJ-UHFFFAOYSA-N 3-aminoheptan-4-ol Chemical compound CCCC(O)C(N)CC LXHUAPWNXDAINJ-UHFFFAOYSA-N 0.000 claims description 2
- KQIGMPWTAHJUMN-UHFFFAOYSA-N 3-aminopropane-1,2-diol Chemical compound NCC(O)CO KQIGMPWTAHJUMN-UHFFFAOYSA-N 0.000 claims description 2
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- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 2
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- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 claims description 2
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- 239000003513 alkali Substances 0.000 claims description 2
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- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 2
- 239000012964 benzotriazole Substances 0.000 claims description 2
- HTMQZWFSTJVJEQ-UHFFFAOYSA-N benzylsulfinylmethylbenzene Chemical compound C=1C=CC=CC=1CS(=O)CC1=CC=CC=C1 HTMQZWFSTJVJEQ-UHFFFAOYSA-N 0.000 claims description 2
- 229960002887 deanol Drugs 0.000 claims description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 2
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 claims description 2
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- 239000007789 gas Substances 0.000 claims description 2
- 238000005470 impregnation Methods 0.000 claims description 2
- PZYDAVFRVJXFHS-UHFFFAOYSA-N n-cyclohexyl-2-pyrrolidone Chemical compound O=C1CCCN1C1CCCCC1 PZYDAVFRVJXFHS-UHFFFAOYSA-N 0.000 claims description 2
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 2
- 229920001451 polypropylene glycol Polymers 0.000 claims description 2
- 229960004889 salicylic acid Drugs 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 2
- AGMZSYQMSHMXLT-UHFFFAOYSA-N 3-aminobutan-1-ol Chemical compound CC(N)CCO AGMZSYQMSHMXLT-UHFFFAOYSA-N 0.000 claims 1
- ATHHXGZTWNVVOU-VQEHIDDOSA-N n-methylformamide Chemical group CN[13CH]=O ATHHXGZTWNVVOU-VQEHIDDOSA-N 0.000 claims 1
- 239000000047 product Substances 0.000 claims 1
- HHVIBTZHLRERCL-UHFFFAOYSA-N sulfonyldimethane Chemical compound CS(C)(=O)=O HHVIBTZHLRERCL-UHFFFAOYSA-N 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 7
- 238000004140 cleaning Methods 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 206010040844 Skin exfoliation Diseases 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 229940079877 pyrogallol Drugs 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 239000002198 insoluble material Substances 0.000 description 2
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- FPGGTKZVZWFYPV-UHFFFAOYSA-M tetrabutylammonium fluoride Chemical compound [F-].CCCC[N+](CCCC)(CCCC)CCCC FPGGTKZVZWFYPV-UHFFFAOYSA-M 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ISMFPACIQUKJDG-UHFFFAOYSA-N 1-(methylamino)butan-1-ol Chemical compound CCCC(O)NC ISMFPACIQUKJDG-UHFFFAOYSA-N 0.000 description 1
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 108091060218 miR-701 stem-loop Proteins 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a vanadium oxide corrosion inhibition fluorine-containing stripping solution, a preparation method and application thereof. Specifically, the invention discloses application of vanadium oxide corrosion inhibition fluorine-containing stripping liquid in stripping and cleaning materials to be stripped in a semiconductor device, wherein the raw materials of the vanadium oxide corrosion inhibition fluorine-containing stripping liquid comprise the following components: fluoride, alkanolamine, corrosion inhibitor, complexing agent, linear amide organic solvent, sulfone and/or sulfoxide organic solvent, alcohol ether organic solvent, alkanone organic solvent, PO-EO-vinyl diamine copolymer and the balance of water, wherein the PO-EO-vinyl diamine copolymer is one or more of Tetronic 901, tetronic 904 and Tetronic908. The vanadium oxide corrosion inhibition fluorine-containing stripping liquid can effectively remove materials to be stripped, and has low corrosiveness to photoresist materials such as VOX/PI/Ni and the like.
Description
Technical Field
The invention relates to a vanadium oxide corrosion inhibition fluorine-containing stripping solution, a preparation method and application thereof.
Background
In the field of infrared sensing chips, chip fabrication mainly relies on MEMS technology. At present, the technology is advanced and foresight, the domestic technology is not behind the foreign technology, and the technology is almost synchronously developed. Because of the newer technology, the development of materials and equipment related to the chip preparation also needs to be synchronously followed, and no mature foreign technology can learn.
In the MEMS process, a photoresist stripping liquid is required to strip and clean the chip. Photoresists involved in MEMS processing include G-line/I-line, DUV photoresists, and the like. Therefore, when stripping and cleaning a photoresist using a photoresist stripper, it is necessary to protect the photoresist material, such as VOX/PI/Ni, in particular, with a strict protection (i.e., low corrosiveness to the photoresist material) in addition to effectively removing photoresist residues, which is a higher requirement for the photoresist stripper.
There is therefore a need in the art to develop a stripping solution that is effective in removing photoresist residues and that is less corrosive to photoresist materials (e.g., VOX/PI/Ni materials).
Disclosure of Invention
The invention provides a vanadium oxide corrosion inhibition fluorine-containing stripping solution, a preparation method and application thereof. The vanadium oxide corrosion inhibition fluorine-containing stripping liquid can effectively remove materials to be stripped, and has low corrosiveness to photoresist materials, such as VOX/PI/Ni and the like.
The invention mainly solves the technical problems by the following technical means.
The invention provides a vanadium oxide corrosion inhibition fluorine-containing stripping solution, which comprises the following raw materials in percentage by mass:
0.05% -15% of fluoride, 18% -40% of alkanolamine, 0.5% -5% of corrosion inhibitor, 0.5% -5% of complexing agent, 10% -20% of linear amide organic solvent, 5% -15% of sulfone and/or sulfoxide organic solvent, 5% -10% of alcohol ether organic solvent, 5% -10% of alkanone organic solvent, 0.05% -1.5% of PO-EO-vinyl diamine copolymer and the balance of water, wherein the sum of the mass fractions of the components is 100%, and the PO-EO-vinyl diamine copolymer is one or more of Tetronic 901, tetronic 904 and Tetronic908.
In some embodiments, the mass fraction of fluoride may be 2.0% -10.00%. In some preferred embodiments, the mass fraction of fluoride may be 2.0% -6.0%. In some more preferred embodiments, the mass fraction of fluoride may be 5.3%.
In particular, in some embodiments, the mass fraction of fluoride may be 0.05%, 2.0%, 5.3%, 6.0%, 9.0%, 10.0%, 13.0%, or 15%.
In some embodiments, the alkanolamine may be 18.0% to 35.0% by mass. In some preferred embodiments, the alkanolamine may be 20.0% to 29.0% by mass. In some more preferred embodiments, the alkanolamine may be 25.4% by mass.
Specifically, in some embodiments, the alkanolamine may be 18%, 20.0%, 25.0%, 25.4%, 29.0%, 30.0%, 35.0%, or 40% by mass.
In some embodiments, the corrosion inhibitor may be 1.2% -4.3% by mass. In some preferred embodiments, the corrosion inhibitor may be 1.8% -3.5% by mass. In some more preferred embodiments, the corrosion inhibitor may be 2.2% by mass.
Specifically, in some embodiments, the corrosion inhibitor may be 0.50%, 1.20%, 1.80%, 2.00%, 2.20%, 3.50%, 4.30%, or 5.00% by mass.
In some embodiments, the complexing agent may be present in an amount of 0.80% to 4.5% by mass. In some preferred embodiments, the complexing agent may be present in a mass fraction of 1.10% to 3.6%. In some more preferred embodiments, the complexing agent may be present at a mass fraction of 1.50%.
In particular, in some embodiments, the complexing agent may be 0.50%, 0.80%, 1.10%, 1.30%, 1.50%, 3.60%, 4.50%, or 5.00% by mass.
In some embodiments, the linear amide-based organic solvent may be 13% -18% by mass. In some preferred embodiments, the linear amide-based organic solvent may be 15% -18% by mass. In some more preferred embodiments, the linear amide-based organic solvent may have a mass fraction of 17.8%.
Specifically, in some embodiments, the linear amide-based organic solvent may be 10%, 13%, 15%, 16%, 17.8%, 18%, or 20% by mass.
In some embodiments, the mass fraction of the sulfone-based and/or sulfoxide-based organic solvent may be 6.70% -15%. In some preferred embodiments, the mass fraction of the sulfone-based and/or sulfoxide-based organic solvent may be 7.50% -12.4%. In some more preferred embodiments, the mass fraction of the sulfone-based and/or sulfoxide-based organic solvent may be 12.4%.
In particular, in some embodiments, the mass fraction of the sulfone-and/or sulfoxide-based organic solvent may be 5.0%, 6.70%, 7.50%, 10%, 12.4%, or 15%.
In some embodiments, the mass fraction of the alcohol ether organic solvent may be 6.70% -9.6%. In some preferred embodiments, the mass fraction of the alcohol ether organic solvent may be 7.50% -8.2%. In some more preferred embodiments, the mass fraction of the alcohol ether organic solvent may be 7.8%.
In particular, in some embodiments, the mass fraction of the alcohol ether organic solvent may be 5%, 6.70%, 7.50%, 7.8%, 8.2%, 9.6%, or 10%.
In some embodiments, the mass fraction of the alkanone organic solvent may be 6.70% -10%. In some preferred embodiments, the mass fraction of the alkanone organic solvent may be 7.50% -9.1%. In some more preferred embodiments, the mass fraction of the alkanone organic solvent may be 9.1%.
In particular, in some embodiments, the mass fraction of the alkanone organic solvent may be 5%, 6.70%, 7.50%, 8.20%, 9.1%, or 10%.
In some embodiments, the PO-EO-vinyl diamine copolymer can be from 0.56% to 1.5%. In some preferred embodiments, the PO-EO-vinyl diamine copolymer can be from 0.73% to 1.2%. In some more preferred embodiments, the PO-EO-vinyl diamine copolymer may be 1.2%.
Specifically, in some embodiments, the PO-EO-vinyl diamine copolymer may be 0.05%, 0.10%, 0.56%, 0.73%, 1.08%, 1.2%, or 1.50%.
Wherein the fluoride can be selected from one or more of hydrogen fluoride and salts formed by hydrogen fluoride and alkali; preferably one or more of ammonium bifluoride, ammonium fluoride, hydrogen fluoride, tetramethyl ammonium fluoride, tetraethyl ammonium fluoride, tetrapropyl ammonium fluoride, tetrabutyl ammonium fluoride, benzyl trimethyl ammonium fluoride and choline fluoride; more preferably one or more of ammonium bifluoride, ammonium fluoride, hydrogen fluoride, tetramethylammonium fluoride, tetraethylammonium fluoride, tetrapropylammonium fluoride, benzyltrimethylammonium fluoride and choline fluoride; further preferred is ammonium fluoride.
The alkanolamine may be a conventional alkanolamine in the art; preferably aminoethylethanolamine, dimethylaminoethanol, monoethanolamine, N-methylethanolamine, N-ethylethanolamine, N-propylethanolamine, N-butylethanolamine, diethanolamine, triethanolamine, N-methyldiethanolamine, N-ethyldiethanolamine, isopropanolamine, diisopropanolamine, triisopropanolamine, N-methylisopropanolamine, N-propylisopropanolamine, 2-aminopropane-1-ol, N-methyl-2-aminopropane-1-ol, N-ethyl-2-aminopropane-1-ol, 1-aminopropane-3-ol, N-methyl-1-aminopropane-3-ol, N-ethyl-1-aminopropane-3-ol, 1-aminobutan-2-ol, N-methyl-1-aminobutan-2-ol, N-ethyl-1-aminobutan-2-ol, 2-aminobutan-1-ol, N-methyl-2-aminobutan-1-ol, N-ethyl-2-aminobutan-1-ol, 3-methylbutan-1-ol, N-methyl-3-aminopropane-1-ol, N-methyl-1-aminobutan-1-ol, N-ethyl-1-aminobutan-4-1-aminobutan-1-ol, one or more of N-methyl-1-aminobutan-4-ol, N-ethyl-1-aminobutan-4-ol, 1-amino-2-methylpropan-2-ol, 2-amino-2-methylpropan-1-ol, 1-aminopentan-4-ol, 2-amino-4-methylpentan-1-ol, 2-aminohexane-1-ol, 3-aminoheptane-4-ol, 1-aminooctane-2-ol, 5-aminooctane-4-ol, 1-aminopropane-2, 3-diol, 2-aminopropane-1, 3-diol, tris (hydroxymethyl) aminomethane, 1, 2-diaminopropane-3-ol, 1, 3-diaminopropane-2-ol and 2- (2-aminoethoxy) ethanol; more preferably one or more of monoethanolamine, diethanolamine, triethanolamine, isopropanolamine, N-methyldiethanolamine, 1-aminobutan-2-ol, N-ethylisopropanolamine, 1-aminooctan-2-ol and tris (hydroxymethyl) aminomethane; further preferred is monoethanolamine.
When the alkanolamine is plural, the plural is preferably two, for example, N-ethylisopropanolamine and tris (hydroxymethyl) aminomethane. When two alkanolamines are mentioned, the mass ratio of the two can be 0.5-2.0, for example, 1:1. For example, the mass ratio of N-ethylisopropanolamine to tris (hydroxymethyl) aminomethane may be 0.5-2.0, e.g., 1:1.
The corrosion inhibitor may be a conventional corrosion inhibitor in the art, preferably one or more of 1-thioglycerol, 2-mercaptopropionic acid, benzotriazole, catechol, gallic acid and pyrogallol, more preferably 1-thioglycerol.
When the corrosion inhibitor is plural, the plural is preferably two, for example, gallic acid and pyrogallol. When two corrosion inhibitors are used, the mass ratio of the two corrosion inhibitors can be 0.5-2.0, for example, 1:1. For example, the mass ratio of gallic acid to pyrogallol may be 0.5-2.0, e.g., 1:1.
The complexing agent can be one or more of glycolic acid, malonic acid, citric acid, iminodiacetic acid, nitrilotriacetic acid, ethylenediamine tetraacetic acid, salicylic acid, pentamethyldiethylenetriamine, sulfamic acid and sulfosalicylic acid; preferably one or more of glycolic acid, malonic acid, citric acid, iminodiacetic acid, pentamethyldiethylenetriamine, sulfamic acid and sulfosalicylic acid; more preferably ethanolamine.
When the corrosion inhibitor is plural, the plural is preferably two, for example, malonic acid and citric acid. When two corrosion inhibitors are used, the mass ratio of the two corrosion inhibitors can be 0.5-2.0, for example, 1:1. For example, the mass ratio of malonic acid to citric acid can be 0.5-2.0, e.g., 1:1.
The linear amide organic solvent may be a conventional linear amide organic solvent in the art, preferably one or more of N-methylformamide, N-ethylformamide, N-dimethylformamide, N-diethylformamide, acetamide, N-methylacetamide, N-dimethylacetamide, N- (2-hydroxyethyl) acetamide, N-dimethylpropionamide, 3-methoxy-N, N-dimethylpropionamide, 3- (2-ethylhexyl oxy) -N, N-dimethylpropionamide and 3-butoxy-N, N-dimethylpropionamide; more preferably one or more of N-methylformamide, N-ethylformamide, N-diethylformamide, N-methylacetamide, 3- (2-ethylhexyl oxy) -N, N-dimethylpropionamide and 3-butoxy-N, N-dimethylpropionamide; n-methylformamide is further preferred.
When the linear amide-based organic solvent is plural, the plural is preferably three, for example, a mixed solvent of N-methylformamide, N-methylacetamide and 3-butoxy-N, N-dimethylpropionamide. When the number of the linear amide organic solvents is three, the mass ratio of the two organic solvents is (0.5-2.0): (0.5-2.0), e.g., 1:1.
The sulfone organic solvent can be a conventional sulfone organic solvent in the field; preferably one or more of methylsulfonic acid, sulfolane and dipropyl sulfone, more preferably sulfolane. The sulfoxide organic solvent can be a conventional sulfoxide organic solvent in the field, and is preferably one or more of dimethyl sulfoxide and methyl ethyl sulfoxide, diphenyl sulfoxide, thionyl chloride and benzyl sulfoxide.
When the sulfone-based organic solvent and the sulfoxide-based organic solvent are mixed, the mass ratio of the sulfone-based organic solvent to the sulfoxide-based organic solvent may be 0.5 to 2.0, for example, 1:1.
The alcohol ether organic solvent can be a conventional alcohol ether organic solvent in the field; preferably one or more of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol, polypropylene glycol, polyethylene glycol monomethyl ether, polyethylene glycol monobutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monopropyl ether and dipropylene glycol monobutyl ether; more preferably one or more of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, propylene glycol monomethyl ether, tripropylene glycol monomethyl ether and dipropylene glycol monobutyl ether; more preferred is ethylene glycol monomethyl ether.
When the alcohol ether type organic solvent is plural, the plural is preferably two, for example, ethylene glycol monomethyl ether and dipropylene glycol monobutyl ether. When the alcohol ether type organic solvent is two, the mass ratio of the two can be 0.5-2.0, for example, 1:1. For example, the mass ratio of ethylene glycol monomethyl ether to dipropylene glycol monobutyl ether may be 0.5-2.0, e.g., 1:1.
The alkanone organic solvent may be a conventional alkanone organic solvent in the art; preferred are imidazolidinone and/or pyrrolidone type organic solvents, and more preferred are imidazolidinone type organic solvents. The imidazolidinone organic solvent is preferably 2-imidazolidinone and/or 1, 3-dimethyl-2-imidazolidinone, more preferably 2-imidazolidinone. The pyrrolidone type organic solvent is preferably one or more of N-ethyl pyrrolidone, N-methyl pyrrolidone and N-cyclohexyl pyrrolidone.
When the alkanone organic solvent is a mixture of an imidazolidinone and a pyrrolidone organic solvent, the mass ratio of the imidazolidinone organic solvent to the pyrrolidone organic solvent may be 0.5 to 2.0, for example, 1:1. For example, the mass ratio of 2-imidazolidinone to N-ethyl pyrrolidone may be 0.5-2.0, e.g., 1:1.
The PO-EO-vinyl diamine copolymer is preferably Tetronic908.
In some preferred embodiments of the present invention, the raw material components of the vanadium oxide corrosion inhibition fluorine-containing stripping solution comprise the fluoride, the alkanolamine, the corrosion inhibitor, the complexing agent, the linear amide organic solvent, the sulfone and/or sulfoxide organic solvent, the alcohol ether organic solvent, the alkanone organic solvent, the PO-EO-vinyl diamine copolymer and the balance of water, wherein the sum of the mass percentages of the components is 100%.
The invention also provides a preparation method of the vanadium oxide corrosion inhibition fluorine-containing stripping liquid, which comprises the following steps: mixing the raw materials. The mixing is preferably carried out by adding the solid component in the raw material components into the liquid component and stirring uniformly. The temperature of the mixing is room temperature. The mixing is preferably followed by a shaking and filtering operation. The purpose of the shaking is to thoroughly mix the raw material components, and the shaking speed and time are not limited. Filtration is to remove insoluble materials.
The invention also provides application of the vanadium oxide corrosion inhibition fluorine-containing stripping liquid in stripping and cleaning of materials to be stripped in semiconductor devices. The semiconductor device is preferably one or more of a logic chip, a memory chip, a microelectromechanical chip (i.e., MEMS chip), an optoelectronic chip, and a power chip (e.g., IGBT, etc.). The material to be peeled is preferably: positive photoresist, photoresist residue, hardened cross-linked photoresist, and polymers. The photoresist residue can be the self-residue of the photoresist after dry etching and/or dry photoresist stripping. The hardened and crosslinked photoresist can be the reaction product of the photoresist and plasma or oxygen and other gases after dry etching and/or dry photoresist stripping. The polymer can be the reaction product of light and a dielectric layer, a metal layer and the like on a wafer under the action of plasma in the dry etching and/or dry photoresist removing process. The material to be peeled can be specifically: positive photoresist RZJ-5701 from su state reddish company; AZ MIR 701 from AZ corporation. The application preferably comprises the steps of: and (3) contacting the material to be stripped with stripping liquid. The contacting is preferably by impregnation.
The temperature of the contacting is preferably 55-85 ℃, more preferably 60-75 ℃.
The contact time is preferably 10 to 65min, more preferably 30 to 60min.
In the present invention, room temperature is 10-30 ℃.
On the basis of conforming to the common knowledge in the field, the above preferred conditions can be arbitrarily combined to obtain the preferred examples of the invention.
The reagents and materials used in the present invention are commercially available, wherein the PO-EO-vinyl diamine copolymer selected from Tetronic908, tetronic 904, tetronic 901 is derived from Shanghai Taijin International trade company.
Detailed Description
The invention is further illustrated by means of the following examples, which are not intended to limit the scope of the invention. The experimental methods, in which specific conditions are not noted in the following examples, were selected according to conventional methods and conditions, or according to the commercial specifications.
In the following examples and comparative examples, the preparation method of the vanadium oxide corrosion inhibition fluorine-containing stripping solution comprises the following steps: mixing the corresponding raw materials.
In the following examples, the specific operating temperatures are not limited, and all refer to being conducted under room temperature conditions.
1. Preparation method example of vanadium oxide corrosion inhibition fluorine-containing stripping solution
The raw material components of table 1 were uniformly mixed according to the mass fractions in table 2. Wherein, the mixing is generally to add the solid component in the raw material components into the liquid component and stir the mixture uniformly. The mixing is generally carried out by adding the solid component in the raw material components into the liquid component and stirring uniformly. The temperature of the mixing is room temperature. The mixing is typically followed by a shaking and filtering operation. The purpose of the shaking is to thoroughly mix the raw material components, and the shaking speed and time are not limited. Filtration is to remove insoluble materials.
Table 1 kinds of components in examples
Table 2 mass fraction (%)
Wherein, the comparative example 1 is to examine the mass fraction boundary value of fluoride;
comparative example 2 is to examine the mass fraction boundary value of alkanolamine;
comparative example 3 is to examine the mass fraction boundary value of the PO-EO-vinyl diamine copolymer;
comparative examples 4 to 19 are for examining the kind of PO-EO-vinyl diamine copolymer.
2. Effect examples
1. Sheet metal corrosion test
Titanium (Ti) sheet, aluminum sheet (Al sheet) and nickel sheet deposited with a certain thickness are immersed in a stripping solution (60 ℃ for 30 minutes) to be subjected to corrosion treatment, and then rinsed with pure water. The corrosion rate was calculated by measuring the change in resistivity before and after corrosion using a four-point probe instrument.
2. Dielectric layer corrosion test
The silicon oxide wafer, the silicon nitride wafer, the vanadium oxide wafer and the polyimide wafer deposited with certain thickness are soaked in stripping liquid (60 ℃ for 30 minutes), subjected to corrosion treatment, and then rinsed with pure water. The thickness of the dielectric layer before and after etching was measured by a film thickness meter.
3. Photoresist residue cleaning effect test
The material to be peeled was immersed in a cleaning liquid (60 ℃ C., 30 minutes), subjected to peeling treatment, and then rinsed with pure water. Then SEM observation and evaluation are carried out, and the A grade is that the cleaning rate reaches 100 percent; the class B is to wash 50% -99.9%; grade C is 20% -49.9% of cleaning; grade D is a rinse off of only 19.9% or less.
4. Test of cleaning effect of hardened crosslinked photoresist
The display master wafer containing the material to be peeled was immersed in a cleaning liquid (60 ℃ C., 30 minutes), subjected to a peeling treatment, and then subjected to a rinsing treatment with pure water. Then SEM observation and evaluation are carried out, and the A grade is that the cleaning rate reaches 100 percent; the class B is to wash 50% -99.9%; grade C is 20% -49.9% of cleaning; grade D is a rinse off of only 19.9% or less
5. Polymer cleaning effect test
The display master wafer containing the material to be peeled was immersed in a cleaning liquid (60 ℃ C., 30 minutes), subjected to a peeling treatment, and then subjected to a rinsing treatment with pure water. Then SEM observation and evaluation are carried out, and the A grade is that the cleaning rate reaches 100 percent; the class B is to wash 50% -99.9%; grade C is 20% -49.9% of cleaning; grade D is a rinse off of only 19.9% or less.
TABLE 3 Effect example results
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According to the embodiment 1 and the comparative example 1, the vanadium oxide corrosion inhibition fluorine-containing stripping liquid provided by the invention uses 0.05% -15% of fluoride in mass fraction, so that the cleaning effect can be effectively improved, and the VOX and PI corrosion rates can be effectively reduced.
According to the embodiment 1 and the comparative example 2, the vanadium oxide corrosion inhibition fluorine-containing stripping liquid provided by the invention can effectively reduce Al, ti, VOX, PI, ni, siO and SiN corrosion rates by using 18-40% of alkanolamine by mass.
According to the embodiment 1 and the comparative example 3, the vanadium oxide corrosion inhibition fluorine-containing stripping liquid provided by the invention uses 0.05% -1.5% of PO-EO-vinyl diamine copolymer by mass fraction, so that the cleaning effect can be effectively improved, and the corrosion rates of Al, ti, PI, ni, siO and SiN can be effectively reduced.
According to the embodiment 1 and the comparative examples 4-19, it can be found that the vanadium oxide corrosion inhibition fluorine-containing stripping liquid provided by the invention adopts one or more of Tetronic 901, tetronic 904 and Tetronic908 as the PO-EO-vinyl diamine copolymer, so that the cleaning effect can be effectively improved, or the corrosion rates of Al, ti, VOX, PI, ni, siO and SiN can be effectively reduced.
In summary, according to Table 3, the vanadium oxide corrosion inhibition fluorine-containing stripping solution provided by the invention has low corrosiveness to various materials and has a strong removal effect on photoresist residues, hardened and crosslinked photoresist and polymers compared with the stripping solutions in comparative examples 1 to 19.
Claims (12)
1. The application of the vanadium oxide corrosion inhibition fluorine-containing stripping liquid in stripping and cleaning materials to be stripped in semiconductor devices is characterized in that the raw materials of the vanadium oxide corrosion inhibition fluorine-containing stripping liquid comprise the following components in percentage by mass: 0.05% -15% of fluoride, 18% -40% of alkanolamine, 0.5% -5% of corrosion inhibitor, 0.5% -5% of complexing agent, 10% -20% of linear amide organic solvent, 5% -15% of sulfone and/or sulfoxide organic solvent, 5% -10% of alcohol ether organic solvent, 5% -10% of alkanone organic solvent, 0.05% -1.5% of PO-EO-vinyl diamine copolymer and the balance of water, wherein the sum of the mass fractions of the components is 100%, and the PO-EO-vinyl diamine copolymer is one or more of Tetronic 901, tetronic 904 and Tetronic908.
2. The use according to claim 1, wherein,
the mass fraction of the fluoride is 2.0% -10.00%;
and/or, the mass fraction of the complexing agent is 0.80% -4.5%;
and/or, the alkanolamine has a mass fraction of 18.0% to 35.0%;
and/or, the PO-EO-vinyl diamine copolymer is 0.56% -1.5%;
and/or, the mass fraction of the corrosion inhibitor is 1.2% -4.3%;
and/or, the mass fraction of the linear amide organic solvent is 13% -18%;
and/or, the mass fraction of the sulfone and/or sulfoxide organic solvent is 6.70% -15%;
and/or the mass fraction of the alcohol ether organic solvent is 6.70% -9.6%;
and/or the mass fraction of the alkane organic solvent is 6.70% -10%.
3. The use according to claim 2, wherein,
the mass fraction of the fluoride is 2.0% -6.0%;
and/or the mass fraction of the complexing agent is 1.10% -3.6%;
and/or, the alkanolamine has a mass fraction of 20.0% to 29.0%;
and/or, the PO-EO-vinyl diamine copolymer is 0.73% -1.2%;
and/or, the mass fraction of the corrosion inhibitor is 1.8% -3.5%;
and/or, the mass fraction of the linear amide organic solvent is 15% -18%;
and/or, the mass fraction of the sulfone and/or sulfoxide organic solvent is 7.50% -12.4%;
and/or the mass fraction of the alcohol ether organic solvent is 7.50% -8.2%;
and/or, the mass fraction of the alkane organic solvent is 7.50% -9.1%.
4. The use according to claim 3, wherein,
the mass fraction of the fluoride is 5.3%;
and/or, the mass fraction of the complexing agent is 1.50%;
and/or, the alkanolamine is 25.4% by mass;
and/or, the PO-EO-vinyl diamine copolymer is 1.2%;
and/or, the mass fraction of the corrosion inhibitor is 2.2%;
and/or, the mass fraction of the linear amide type organic solvent is 17.8%;
and/or, the mass fraction of the sulfone and/or sulfoxide organic solvent is 12.4%;
and/or the mass fraction of the alcohol ether organic solvent is 7.8%;
and/or, the mass fraction of the alkanone organic solvent is 9.1%.
5. The use according to claim 1, wherein,
the fluoride is selected from one or more of hydrogen fluoride and salts formed by the hydrogen fluoride and alkali;
and/or the alkanolamine is aminoethylethanolamine, dimethylaminoethanol, monoethanolamine, N-methylethanolamine, N-ethylethanolamine, N-propylethanolamine, N-butylethanolamine, diethanolamine, triethanolamine, N-methyldiethanolamine, N-ethyldiethanolamine, isopropanolamine, diisopropanolamine, triisopropanolamine, N-methylisopropanolamine, N-ethylisopropanolamine, N-propylisopropanolamine, 2-aminopropane-1-ol, N-methyl-2-aminopropane-1-ol, N-ethyl-2-aminopropane-1-ol, 1-aminopropane-3-ol, N-methyl-1-aminopropane-3-ol, N-ethyl-1-aminopropane-3-ol, 1-aminobutan-2-ol, N-methyl-1-aminobutan-2-ol, N-ethyl-1-aminobutan-2-ol, 2-aminobutan-1-ol, N-methyl-2-aminobutan-1-ol, N-ethyl-2-aminobutan-1-ol, 3-aminobutan-1-ol, N-methyl-1-aminobutan-3-1-ol, N-methyl-1-aminobutan-3-aminobutan-1-ol, one or more of N-methyl-1-aminobutan-4-ol, N-ethyl-1-aminobutan-4-ol, 1-amino-2-methylpropan-2-ol, 2-amino-2-methylpropan-1-ol, 1-aminopentan-4-ol, 2-amino-4-methylpentan-1-ol, 2-aminohexane-1-ol, 3-aminoheptane-4-ol, 1-aminooctane-2-ol, 5-aminooctane-4-ol, 1-aminopropane-2, 3-diol, 2-aminopropane-1, 3-diol, tris (hydroxymethyl) aminomethane, 1, 2-diaminopropane-3-ol, 1, 3-diaminopropane-2-ol and 2- (2-aminoethoxy) ethanol;
and/or the corrosion inhibitor is one or more of 1-thioglycerol, 2-mercaptopropionic acid, benzotriazole, catechol, gallic acid and pyrogallol;
and/or the complexing agent is one or more of glycolic acid, malonic acid, citric acid, iminodiacetic acid, nitrilotriacetic acid, ethylenediamine tetraacetic acid, salicylic acid, pentamethyldiethylenetriamine, sulfamic acid and sulfosalicylic acid;
and/or the linear amide organic solvent is one or more of N-methylformamide, N-ethylformamide, N-dimethylformamide, N-diethylformamide, acetamide, N-methylacetamide, N-dimethylacetamide, N- (2-hydroxyethyl) acetamide, N-dimethylpropionamide, 3-methoxy-N, N-dimethylpropionamide, 3- (2-ethylhexyl oxy) -N, N-dimethylpropionamide and 3-butoxy-N, N-dimethylpropionamide;
and/or the sulfone organic solvent is one or more of methyl sulfone, sulfolane and dipropyl sulfone;
and/or the sulfoxide organic solvent is one or more of dimethyl sulfoxide, methyl ethyl sulfoxide, diphenyl sulfoxide, thionyl chloride and benzyl sulfoxide;
and/or the alcohol ether organic solvent is one or more of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol, polypropylene glycol, polyethylene glycol monomethyl ether, polyethylene glycol monobutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monopropyl ether and dipropylene glycol monobutyl ether;
and/or the alkanone organic solvent is an imidazolidinone and/or pyrrolidone organic solvent.
6. The use according to claim 5, wherein,
the fluoride is one or more of ammonium bifluoride, ammonium fluoride, hydrogen fluoride, tetramethyl ammonium fluoride, tetraethyl ammonium fluoride, tetrapropyl ammonium fluoride, benzyl trimethyl ammonium fluoride and choline fluoride;
and/or the alkanolamine is one or more of monoethanolamine, diethanolamine, triethanolamine, isopropanolamine, N-methyldiethanolamine, 1-aminobutan-2-ol, N-ethylisopropanolamine, 1-aminooctane-2-ol and tris (hydroxymethyl) aminomethane;
and/or the complexing agent is one or more of glycolic acid, malonic acid, citric acid, iminodiacetic acid, pentamethyldiethylenetriamine, sulfamic acid and sulfosalicylic acid;
and/or the linear amide organic solvent is one or more of N-methyl formamide, N-ethyl formamide, N-diethyl formamide, N-methyl acetamide, 3- (2-ethylhexyl oxy) -N, N-dimethyl propionamide and 3-butoxy-N, N-dimethyl propionamide;
and/or the alcohol ether organic solvent is one or more of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, propylene glycol monomethyl ether, tripropylene glycol monomethyl ether and dipropylene glycol monobutyl ether;
and/or the imidazolidinone organic solvent is 2-imidazolidinone and/or 1, 3-dimethyl-2-imidazolidinone;
and/or the pyrrolidone organic solvent is one or more of N-ethyl pyrrolidone, N-methyl pyrrolidone and N-cyclohexyl pyrrolidone.
7. The use according to claim 6, wherein,
the fluoride is ammonium fluoride;
and/or, the alkanolamine is monoethanolamine;
and/or, the corrosion inhibitor is 1-thioglycerol;
and/or the complexing agent is ethanolamine;
and/or the linear amide organic solvent is N-methyl formamide;
and/or, the sulfone and/or sulfoxide organic solvent is sulfolane;
and/or the alcohol ether organic solvent is ethylene glycol monomethyl ether;
and/or, the alkanone organic solvent is 2-imidazolidone;
and/or, the PO-EO-vinyl diamine copolymer is Tetronic908.
8. The use according to any one of claims 1 to 7,
the semiconductor device is one or more of a logic chip, a memory chip, a micro-electromechanical chip, a photoelectric chip and a power chip;
and/or the material to be stripped is one or more of positive photoresist, photoresist residue, hardened and crosslinked photoresist and polymer.
9. The use according to claim 8, wherein,
the photoresist residue is self residue of the photoresist after dry etching and/or dry photoresist removing process;
and/or, the hardened and crosslinked photoresist is a gas reaction product of the photoresist and plasma or oxygen after dry etching and/or dry photoresist stripping process;
and/or the polymer is the product of the reaction of light with a dielectric layer and a metal layer on the wafer under the action of plasma in the dry etching and/or dry photoresist removing process.
10. Use according to any one of claims 1-7, characterized in that it comprises the following steps: and (3) contacting the material to be stripped with stripping liquid.
11. The use according to claim 10, wherein said contacting is by impregnation;
and/or, the temperature of the contacting is 55-85 ℃;
and/or, the contact time is 10-65min.
12. The use according to claim 11, wherein the temperature of said contacting is 60-75 ℃;
and/or, the contact time is 30-60min.
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CN101233456A (en) * | 2005-06-07 | 2008-07-30 | 高级技术材料公司 | Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition |
WO2009146606A1 (en) * | 2008-06-06 | 2009-12-10 | 安集微电子科技(上海)有限公司 | Cleaning solution for removing residues from plasma etching |
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