CN112859460A

CN112859460A - Display device, tiled display device and binding structure

Info

Publication number: CN112859460A
Application number: CN202110214461.9A
Authority: CN
Inventors: 向昌明
Original assignee: TCL Huaxing Photoelectric Technology Co Ltd
Current assignee: TCL Huaxing Photoelectric Technology Co Ltd
Priority date: 2021-02-25
Filing date: 2021-02-25
Publication date: 2021-05-28
Anticipated expiration: 2041-02-25
Also published as: CN112859460B

Abstract

The application provides a display device, a splicing display device and a binding structure. The display device comprises a driving substrate, a flexible binding member and a first eutectic bonding layer. The driving substrate includes a display region and a binding region. The display area is disposed adjacent to the binding area. The driving substrate includes a first bonding pad. The first binding pad is located in the binding region. The flexible binding includes a second binding pad. The second binding pad is disposed opposite the first binding pad. The first eutectic welding layer is welded between the first binding pad and the second binding pad. The material of the first eutectic welding layer is eutectic alloy solder. This application replaces the ACF that uses among the prior art to glue through using eutectic welding layer welding drive base plate and flexible binding to avoided the excessive problem of gluing of ACF, can reach the effect of narrow frame.

Description

Display device, tiled display device and binding structure

Technical Field

The application relates to the technical field of display, in particular to a display device, a splicing display device and a binding structure.

Background

In the conventional display devices, signals required by the display panel are input into the plane by using a Chip On Film (COF) or Flexible Printed Circuit (FPC) Bonding process. One known binding method is: an Anisotropic Conductive Film (ACF) is pasted on a COF/FPC or a display panel, the COF/FPC and the display panel are aligned, the ACF glue is softened by heating and pressurizing, gold balls contained in the ACF are crushed to realize conduction, and stable physical and electrical connection is formed between the COF/FPC and the display panel after the ACF glue is cooled and solidified. However, in the display device bonded with the ACF paste, there are the following problems: the ACF glue is softened and then cured, glue overflow often occurs, the glue overflow can affect the width of the display device, the narrow frame of the display device is not facilitated, and the application of the display device in the splicing display device can be affected.

Disclosure of Invention

In view of this, the present disclosure is directed to a display device, a tiled display device and a binding structure capable of preventing glue overflow and thereby reducing a bezel.

The application provides a display device, it includes:

the driving substrate comprises a display area and a binding area, wherein the display area is arranged adjacent to the binding area, and the driving substrate comprises a first binding pad which is positioned in the binding area;

the flexible binding piece comprises a second binding pad, and the second binding pad is arranged opposite to the first binding pad; and

and the first eutectic welding layer is welded between the first binding pad and the second binding pad and is made of eutectic alloy solder.

In one embodiment, the driving substrate includes a substrate and a passivation layer, the passivation layer is disposed on the substrate, the first bonding pad is disposed on a side of the passivation layer away from the substrate, a surface of the passivation layer close to the first bonding pad has a concave-convex structure, and the first bonding pad covers the concave-convex structure.

In one embodiment, the concave-convex structure includes a plurality of protrusions arranged in an array, a recess is formed between two adjacent protrusions, and the depth of each recess in a direction perpendicular to the driving substrate is less than or equal to half of the height of the passivation layer.

In one embodiment, the width of the depression ranges from 50 microns to 300 microns.

In one embodiment, a length of the first bonding pad from an end close to the display area to an end far from the display area is in a range of 60 micrometers to 500 micrometers.

In one embodiment, the material of the first bonding pad and the material of the second bonding pad are both metal materials, and both the first bonding pad and the second bonding pad are in direct contact with the first eutectic bonding layer.

In one embodiment, an end of the first eutectic solder layer away from the display area is located inside an end of the first bonding pad away from the display area.

In one embodiment, the driving substrate further includes a substrate, a driving circuit, a light emitting diode chip, and a second eutectic bonding layer, the driving circuit, the light emitting diode chip, and the second eutectic bonding layer are all disposed in the display area, the driving circuit is disposed on the substrate, the light emitting diode chip is disposed on a side of the driving circuit away from the substrate, and the second eutectic bonding layer is connected between the driving circuit and the light emitting diode chip.

The application also provides a spliced display device which comprises a plurality of display devices, wherein the display devices are the display devices as described in any one of the above.

The present application further provides a binding structure, which includes:

a first binding comprising a first binding pad;

the second binding piece comprises a second binding pad, and the second binding pad is arranged opposite to the first binding pad;

The display device provided by the application comprises a driving substrate, a flexible binding piece and a first eutectic welding layer. The driving substrate includes a display region and a binding region. The display area is disposed adjacent to the binding area. The driving substrate includes a first bonding pad. The first binding pad is located in the binding region. The flexible binding includes a second binding pad. The second binding pad is disposed opposite the first binding pad. The first eutectic welding layer is welded between the first binding pad and the second binding pad. The material of the first eutectic welding layer is eutectic alloy solder.

This application display device replaces the ACF that uses among the prior art to glue through using eutectic welding layer welding drive base plate and flexible binding to avoided the excessive problem of gluing of ACF, can reach the effect of narrow frame.

The tiled display device of the application can narrow the frame by using the display device.

The application discloses binding structure is arranged in display device and can reach the effect of narrow frame.

Drawings

In order to more clearly illustrate the technical solutions in the present application, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a display device according to an embodiment of the present application.

Fig. 2 is a schematic structural view of the concave-convex structure of fig. 1.

Fig. 3(a) to 3(c) are schematic structural views of the concave-convex structure according to another embodiment of the present application.

FIG. 4 is a schematic illustration of one step of the formation of a first eutectic solder layer and a second eutectic solder layer of the present application.

Fig. 5 is a schematic structural diagram of a tiled display device according to an embodiment of the present application.

Fig. 6 is a schematic structural diagram of a binding structure according to an embodiment of the present application.

Detailed Description

The technical solution in the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It should be apparent that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any inventive step based on the embodiments in the present application, are within the scope of protection of the present application.

Referring to fig. 1, fig. 1 is a schematic structural diagram of a display device according to an embodiment of the present disclosure.

The display device 100 provided by the present application may be an electronic device having a display function, such as a mobile phone, a tablet computer, a notebook computer, a game machine, a digital camera, a car navigation device, an electronic billboard, an automatic teller machine, and the like.

The display device 100 of the present application may be one of a Light-Emitting Diode (LED) display device, a Micro-LED display device, or a sub-millimeter Light-Emitting Diode (Mini-LED) display device.

The display device 100 includes a driving substrate 10, a flexible binding 20, and a first eutectic bonding layer 30. The flexible binding 20 is bound to the driving substrate 10. The first eutectic solder layer 30 is located between the driving substrate 10 and the flexible binding 20, and electrically connects the driving substrate 10 and the flexible binding 20. Specifically, the driving substrate 10 includes a first bonding pad 141. The flexible binding 20 comprises a second binding pad 21. The second binding pad 21 is disposed opposite to the first binding pad 141. The first eutectic solder layer 30 is soldered between the first bonding pad 141 and the second bonding pad 21. The material of the first eutectic solder layer 30 is eutectic alloy solder.

In the prior art, the ACF glue is used for electrically connecting the driving substrate and the flexible binding piece, and the problem of ACF glue overflowing is difficult to avoid. Because the excessive glue of ACF glue withstands flexible binding, angle grow when leading to flexible binding to buckle downwards, display device's frame widen for when the concatenation shows, the splice seam grow. This application replaces ACF that uses among the prior art to glue through using eutectic welded mode welding drive base plate and flexible binding to avoided ACF to glue the problem of overflowing gluey, prevented because ACF glues overflow and glues and withstand flexible binding, angle grow when leading to flexible binding to buckle downwards, the emergence of display device frame widen, thereby reach the effect of narrow frame. In addition, the display panel bonded by the ACF glue in the prior art has low bonding strength with the COF/FPC, and poor contact is generated in some cases, thereby affecting the display effect. The first eutectic welding layer has good structural stability, so that the connection reliability between the first binding pad and the second binding pad can be effectively improved, and the problem of binding failure is avoided.

Hereinafter, each member of the display device 100 will be described in detail.

The driving substrate 10 includes a display area DA and a bonding area BA. The display area DA is disposed adjacent to the bonding area BA. In one embodiment, the binding area BA may be located at a lower border of the display device 100. In another embodiment, the binding area BA may also be located at the lower frame and at the side frame of the display device 100.

In one embodiment, the display device 100 is a micro-light emitting diode display device. The driving substrate 10 includes a substrate 11, and a driving circuit layer 12, a passivation layer 13, a wiring layer 14, a second eutectic bonding layer 15, a light emitting diode chip 16, and an encapsulation layer 17 sequentially stacked on the substrate 11. The driving circuit layer 12, the second eutectic bonding layer 15, the light emitting diode chip 16 and the encapsulation layer 17 are disposed in the display area DA. The passivation layer 13 and the routing layer 14 extend from the display area DA to the bonding area BA.

In the display area DA, the driver circuit layer 12 is disposed on the substrate 11. The passivation layer 13 covers a side of the driving circuit layer 12 away from the substrate 11. The passivation layer 13 has a via hole 13a formed therein. The wiring layer 14 is located on a side of the passivation layer 13 away from the driving circuit layer 12. It should be noted that routing layer 14 is not formed as a single piece, but includes a plurality of independent routing patterns. The led chip 16 is disposed on a side of the routing layer 14 away from the passivation layer 13. The second eutectic bonding layer 15 is located between the led chip 16 and the wiring layer 14. The second eutectic bonding layer 15 electrically connects the light emitting diode chip 16 and the wiring layer 14. The wiring layer 14 is electrically connected to the driving circuit layer 12 through a via hole 13a opened in the passivation layer 13. The second eutectic bonding layer 15 and the first eutectic bonding layer 30 may be made of the same material and formed in the same process. In one embodiment, the routing layer 14 is electrically connected to the drain of the driving circuit layer 12 through a via 13a opened in the passivation layer 13. The led chip 16 is electrically connected to the driving circuit layer 12 via the wiring layer 14. The encapsulation layer 17 covers a surface of the led chip 16 away from the wiring layer 14, and encapsulates the led chip 16.

Specifically, the substrate 11 may be a glass substrate, a plastic substrate, or the like.

In one embodiment, the driver circuit layer 12 includes driver circuits. The driving circuit includes one or more thin film transistors. The thin film transistor may be a bottom gate type thin film transistor. Specifically, the driving circuit layer 12 includes a gate electrode GE, a gate insulating layer GI, an active layer CL, a source electrode SE, and a drain electrode DE, which are sequentially stacked on the substrate 11. The gate electrode GE is disposed on the substrate 11. The gate insulating layer GI covers the gate electrode GE and the substrate 11. The active layer CL is located on a surface of the gate insulating layer GI away from the substrate 11. The active layer CL is disposed corresponding to the gate electrode GE. The source electrode SE and the drain electrode DE are located on a side of the active layer CL away from the gate electrode GE, and are respectively connected to two ends of the active layer CL.

It should be understood that the present application is not limited to the structure of the thin film transistor included in the driving circuit layer 12, and the thin film transistor may be a top gate thin film transistor, a bottom gate thin film transistor, or a dual gate thin film transistor.

The material of the passivation layer 13 is an organic material. The organic material includes, but is not limited to, one or more of epoxy resin, Polymethylmethacrylate (PMMA), benzocyclobutene (BCB), polyimide, polyester, Polydimethylsiloxane (PDMS), tetrafluoroethylene-perfluoroalkoxy vinyl ether copolymer (PFA). In one embodiment, the organic material is PFA.

The material of routing layer 14 may be a metallic material. In one embodiment, the material of routing layer 14 is copper. The wiring layer 14 includes a wiring pattern for electrically connecting the driving circuit layer 12 and the light emitting diode chip 16 in the display area DA.

The led chip 16 may be a micro led chip. The connection of the micro-led chip to the driving circuit layer 12 on the driving substrate 10 is achieved by bonding a single micro-led chip to the driving substrate 10 by a bulk transfer technique. In other embodiments, the light emitting diode chip 16 may also be an LED chip or a mini-LED chip.

The material of the encapsulation layer 17 may be silicone gel.

In the bonding area BA, a passivation layer 13 is disposed on the substrate 11. A routing layer 14 is located on a side of the passivation layer 13 facing away from the substrate 11. It is understood that there are other layers between the passivation layer 13 and the substrate 11, which are not described in detail herein.

Routing layer 14 includes a first bonding pad 141. In one embodiment, the surface of the passivation layer 13 near the first bonding pad 141 has a concave-convex structure 131. The first bonding pad 141 covers the concave-convex structure 131. Due to the thin thickness of the wiring layer 14, when the first bonding pad 141 is covered on the concave-convex structure 131, a concave-convex shape similar to the concave-convex structure 131 is formed. By providing the concave-convex structure 131 on the passivation layer 13, the topography of the bonding area BA can be changed, the surface area of the first bonding pad 141 can be increased, and thus the contact area with the first eutectic solder layer 30 and the second bonding pad 21 can be increased, thereby increasing the bonding force between the driving substrate 10 and the flexible bonding member 20.

Referring to fig. 2, fig. 2 is a schematic structural diagram of the concave-convex structure of fig. 1. In one embodiment, the rugged structure 131 includes a plurality of arrayed protrusions 1311. The plurality of arranged protrusions 1311 are in a direction from near the display area DA to far from the display area DA. A recess 1312 is provided between two adjacent protrusions 1311. The shape of the recess 1312 is not limited in the present embodiment, and in the present embodiment, the recess 1312 has a triangular cross section in a direction perpendicular to the upper surface of the substrate 11. Referring to fig. 3(a) to 3(c), fig. 3(a) to 3(c) are schematic structural views of the concave-convex structure according to the embodiment of the present application. The protrusion 1311 has a rectangular, trapezoidal, or semicircular cross section in a direction perpendicular to the upper surface of the substrate 11. In particular embodiments, the shape of the protrusion 1311 may be a triangular prism, a quadrangular prism, a truncated pyramid, or a hemisphere. The depth H1 of each recess 1312 in the direction perpendicular to the upper surface of the substrate 11 is less than or equal to half the thickness H2 of the passivation layer 13.

In a specific embodiment, the thickness H2 of the passivation layer 13 is 6 to 8 microns. The thickness H2 of the passivation layer 13 may be specifically 6 microns, 6.5 microns, 7 microns, 7.5 microns to 8 microns. The depth H1 of each recess 1312 in a direction perpendicular to the upper surface of the substrate 11 ranges from 2 micrometers to 3.5 micrometers. In one embodiment, the depth H1 of each recess 1312 in a direction perpendicular to the upper surface of substrate 11 is 2 microns, 2.5 microns, 3 microns, or 3.5 microns. In one embodiment, the width W of the recesses 1312 ranges from 50 microns to 300 microns. Specifically, the width W of the recesses 1312 may be 50 microns, 60 microns, 70 microns, 80 microns, 90 microns, 100 microns, 150 microns, 200 microns, 250 microns, or 300 microns. If the depth H1 of the recess 1312 is too large, it may penetrate the passivation layer 13, and if the depth H1 of the recess 1312 is too small, the pull force between the first bonding pad 141 and the second bonding pad 21 is insufficient. Therefore, setting the depth H1 of the recess 1312 within this range, i.e., without damaging the passivation layer 13 structure, can secure the pull force between the first and

second bonding pads

141 and 21.

The length L of the first bonding pad 141 from an end close to the display area DA to an end far from the display area DA ranges from 60 micrometers to 500 micrometers. The length L of the first bonding pad 141 from an end close to the display area DA to an end far from the display area DA may be 60 micrometers, 70 micrometers, 80 micrometers, 90 micrometers, 100 micrometers, 200 micrometers, 300 micrometers, 400 micrometers, or 500 micrometers. In the prior art of bonding using ACF paste, in order to ensure that the contact resistance is sufficiently small, a bonding Pad (Pad) on the display panel needs to have a certain length, which further causes the bezel to be widened. Compared with the prior art, the eutectic welding material is used for welding the first bonding pad 141 and the second bonding pad 21, the ohmic resistance can be effectively reduced due to the fusion of metal and metal, and the contact resistance which is small enough can be ensured even if the length of the bonding pad is shortened. In the case where a sufficiently small contact resistance can be ensured, the length L of the first bonding pad 141 can be shortened to be in a range of 60 micrometers to 500 micrometers, thereby achieving the effect of a narrow bezel.

The flexible binding 20 is bent to the rear surface of the driving substrate 10, thereby realizing a narrow bezel. The Flexible binding 20 may be a Chip On Film (COF) or a Flexible Printed Circuit (FPC). The display device 100 may include a Printed Circuit Board (PCB) 40. The printed circuit board 40 is connected to an end of the chip on film or the flexible circuit board away from the driving substrate 10. In the present embodiment, the flexible binding 20 comprises a flip-chip film. The display device 100 further includes a Flexible Printed Circuit (FPC) bonded to the chip on film, and a Printed Circuit board 40 connected to an end of the FPC away from the driving substrate 10. In another embodiment, the flexible binding 20 is a flexible circuit board. The end of the flexible circuit board remote from the driving substrate 10 is connected with a printed circuit board 40.

In one embodiment, the material of the second bonding pad 21 and the material of the first bonding pad 141 are both metal materials. The first and

second bonding pads

141 and 21 are in direct contact with the first eutectic bonding layer 30. In the conventional technique of bonding using an ACF paste, in order to prevent oxidation of the surface of the bonding pad and increase contact resistance, it is generally necessary to form an indium tin oxide layer on the surface of the bonding pad to prevent oxidation, which leads to increase in cost. In contrast, in the present embodiment, by directly contacting the first and

second bonding pads

141 and 21 made of a metal material with the first eutectic bonding layer 30 made of an alloy material, the first and

second bonding pads

141 and 21 are not easily oxidized due to tight bonding between metal atoms. Therefore, it is not necessary to fabricate an ito oxidation preventing layer on the first and

second bonding pads

141 and 21. Therefore, the manufacturing process is saved, and the cost is increased.

The first eutectic bonding layer 30 is formed between the first bonding pad 141 and the second bonding pad 21 by eutectic bonding. Eutectic soldering is low-melting-point alloy soldering, which refers to a phenomenon that eutectic fusion occurs in eutectic solder at a relatively low temperature, and the eutectic alloy is directly changed from a solid state to a liquid state without passing through a plasticity stage. Eutectic alloy solder is an alloy consisting of two or more metals. In one embodiment, the eutectic alloy solder may be gold-tin alloy (Au/Su) with a mass ratio of: 10/90, melting point 210 ℃. In other embodiments, the eutectic alloy solder may also be silver-tin alloy (Ag/Sn), gold-germanium alloy (Au/Ge), gold-silicon alloy (Au/Si), or the like.

In one embodiment, the surface of the first eutectic bonding layer 30 near the first bonding pad 141 has a shape matching the concavo-convex structure 131.

In one embodiment, an end E1 of the first eutectic solder layer 30 away from the display area DA is located inside an end E2 of the first bonding pad 141 away from the display area DA. An end E1 of the first eutectic solder layer 30 far from the display area DA may be flush with an end E2 of the second bonding pad 21 far from the display area DA. The first eutectic solder layer 30 forms a eutectic solder pattern by printing eutectic alloy solder on the first bonding pads 141 or the second bonding pads 21, and then heating to complete eutectic solidification. Thus, the length and position of the first eutectic solder layer 30 can be controlled. The end E1 of the first eutectic solder layer 30 far from the display area DA is disposed to be located inside the end E2 of the first bonding pad 141 far from the display area DA, enabling the bezel to be narrowed.

Referring to fig. 1 and 4 together, fig. 4 is a schematic diagram of one step of formation of a first eutectic solder layer and a second eutectic solder layer of the present application. The first eutectic bonding layer 30 and the second eutectic bonding layer 15 of the display device of the present application may be formed by: printing eutectic alloy solder 200 on the first bonding pads 141 and the routing layer 14, wherein the printing mode can be steel mesh printing; aligning and attaching the second binding pad 21 and the first binding pad 141, simply positioning by using a high-temperature adhesive tape, and performing component punching (Die Bond) on the micro light-emitting diode chip 15; the eutectic solder 200 is heated to solidify the eutectic solder 200 to form the first eutectic solder layer 30 and the second eutectic solder layer 15. The heat curing may be performed by putting the driving substrate 10 together with the flexible binding 20 into a heating furnace to be heated, or by separately heating the eutectic alloy solder 200 with a laser.

The display device provided by the application comprises a driving substrate, a flexible binding piece and a first eutectic welding layer. The driving substrate includes a display region and a binding region. The display area is disposed adjacent to the binding area. The driving substrate includes a first bonding pad. The first binding pad is located in the binding region. The flexible binding includes a second binding pad. The second binding pad is disposed opposite the first binding pad. The first eutectic welding layer is welded between the first binding pad and the second binding pad. The material of the first eutectic welding layer is eutectic alloy solder. This application replaces the ACF that uses among the prior art to glue through using eutectic welding layer welding drive base plate and flexible binding to avoided the excessive problem of gluing of ACF, can reach the effect of narrow frame.

Referring to fig. 5, fig. 5 is a schematic structural diagram of a tiled display device according to an embodiment of the present application. The tiled display device 1 of the present application includes a plurality of display devices 100. The plurality of display devices 100 are arranged in a certain manner and are tiled to form the tiled display device 1. Wherein the binding area BA is located at a lower border of the display device 100. The tiled display device 1 of the present application uses the display device 100 as described above, can narrow the bezel, and has all the technical effects of the display device as described above.

The present application also provides a binding structure 200. Referring to fig. 6, fig. 6 is a schematic structural diagram of a binding structure provided in the present application. The binding structure 200 includes a first binding 210, a second binding 220, and a eutectic bonding layer 230. The first binding 210 includes a first binding pad 2141. The second binding 220 includes a second binding pad 221. The second bonding pad 221 is disposed opposite to the first bonding pad 2141. The eutectic solder layer 230 is soldered between the first bonding pad 2141 and the second bonding pad 221. The material of the eutectic solder layer 230 is eutectic alloy solder.

The first binding 210 may be a display panel, COF, FPC, or PCB. The second binding member 220 may also be a display panel, COF, FPC, or PCB. In one embodiment, the first binding 210 is a display panel. The second binding 220 is a COF.

The first binding 210 may include a substrate 211 and an organic layer 213. The organic layer 213 is disposed on the substrate 211, and the first bonding pad 2141 is disposed on a side of the organic layer 213 away from the substrate 211. The material of the organic layer 213 includes, but is not limited to, one or more of epoxy resin, polymethyl methacrylate (PMMA), benzocyclobutene (BCB), polyimide, polyester, Polydimethylsiloxane (PDMS), and tetrafluoroethylene-perfluoroalkoxy vinyl ether copolymer (PFA). In one embodiment, the material of the organic layer is PFA.

The surface of the organic layer 213 near the first bonding pad 2141 has a concave-convex structure 2131. The first bonding pad 2141 covers the concave-convex structure 2131. Since the first bonding pads 2141 have a small thickness, when the first bonding pads 2141 cover the concave-convex structure 2131, a concave-convex shape similar to the concave-convex structure 2131 is formed. By providing the concave-convex structure 2131 on the organic layer, the topography of the first bonding pad 2141 can be changed, and the surface area of the first bonding pad 2141 can be increased, so that the contact area with the eutectic solder layer and the second bonding pad 221 can be increased, thereby increasing the bonding force between the first bonding element 210 and the second bonding element 220. The concave-convex structure 2131 may refer to the structures and dimensions in fig. 1 and fig. 3(a) to 3(c), and will not be described in detail here.

The eutectic alloy solder is made of eutectic alloy solder. In one embodiment, the eutectic alloy solder may be gold-tin alloy (Au/Su) with a mass ratio of: 10/90, melting point 210 ℃. In other embodiments, the eutectic alloy solder may also be silver-tin alloy (Ag/Sn), gold-germanium alloy (Au/Ge), gold-silicon alloy (Au/Si), or the like.

The binding structure of the present application includes: the bonding tool comprises a first bonding piece, a second bonding piece and a first eutectic welding layer. The first binding includes a first binding pad. The second binding includes a second binding pad. The second binding pad is disposed opposite the first binding pad. The first eutectic welding layer is welded between the first binding pad and the second binding pad. The first eutectic welding layer is made of eutectic alloy solder. The application discloses binding structure is arranged in display device and can reach the effect of narrow frame.

The foregoing provides a detailed description of embodiments of the present application, and the principles and embodiments of the present application have been described herein using specific examples, which are presented solely to aid in the understanding of the present application. Meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.

Claims

1. A display device, comprising:

2. The display device according to claim 1, wherein the driving substrate includes a substrate and a passivation layer, the passivation layer is disposed on the substrate, the first bonding pad is disposed on a side of the passivation layer away from the substrate, a surface of the passivation layer close to the first bonding pad has a concave-convex structure, and the first bonding pad covers the concave-convex structure.

3. The display device according to claim 2, wherein the rugged structure comprises a plurality of protrusions arranged in an array, adjacent two of the protrusions having a recess therebetween, each of the recesses having a depth in a direction perpendicular to the driving substrate less than or equal to one-half of a height of the passivation layer.

4. The display device of claim 3, wherein the width of the depression ranges from 50 microns to 300 microns.

5. The display device of claim 1, wherein a length of the first bonding pad from an end near the display area to an end far from the display area ranges from 60 micrometers to 500 micrometers.

6. The display device of claim 1, wherein a material of the first bonding pad and a material of the second bonding pad are both metallic materials, and wherein the first bonding pad and the second bonding pad are both in direct contact with the first eutectic solder layer.

7. The display device of claim 1, wherein an end of the first eutectic solder layer distal from the display area is located inward of an end of the first bonding pad distal from the display area.

8. The display device of claim 1, wherein the driving substrate further comprises a substrate, a driving circuit, a light emitting diode chip, and a second eutectic bonding layer, the driving circuit, the light emitting diode chip, and the second eutectic bonding layer are disposed in the display area, the driving circuit is disposed on the substrate, the light emitting diode chip is disposed on a side of the driving circuit away from the substrate, and the second eutectic bonding layer is connected between the driving circuit and the light emitting diode chip.

9. A tiled display arrangement comprising a plurality of display arrangements, the display arrangements being as claimed in any one of claims 1 to 8.

10. A binding structure, comprising:

a first binding comprising a first binding pad;