CN112858167A - Multi-row dual-energy linear array detector scanning method, system, medium and device - Google Patents

Multi-row dual-energy linear array detector scanning method, system, medium and device Download PDF

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CN112858167A
CN112858167A CN202110018152.4A CN202110018152A CN112858167A CN 112858167 A CN112858167 A CN 112858167A CN 202110018152 A CN202110018152 A CN 202110018152A CN 112858167 A CN112858167 A CN 112858167A
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王�锋
方志强
黄翌敏
马扬喜
吴铭华
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Shanghai Yirui Optoelectronics Technology Co ltd
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Abstract

The invention provides a method, a system, a medium and a device for scanning a multi-row dual-energy linear array detector, wherein the method comprises the following steps: acquiring high-energy image data and low-energy image data by using a plurality of monocrystalline silicon multi-row dual-energy linear array detectors; processing the high-energy image data and the low-energy image data by adopting a DTDI accumulation working process based on an FPGA circuit to obtain the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector; calculating the transparency of each pixel point by adopting a mapping formula based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector, and converting the transparency into hue, saturation and brightness; and fusing the hue, saturation and brightness of each pixel point based on a conversion formula to generate an RGB image. The invention discloses a method, a system, a medium and a device for scanning a multi-row linear array detector, which are used for realizing high spatial resolution under the condition of low X-ray dose.

Description

Multi-row dual-energy linear array detector scanning method, system, medium and device
Technical Field
The invention relates to the technical field of linear array detector detection, in particular to a method, a system, a medium and a device for scanning a multi-row dual-energy linear array detector.
Background
Currently, in the field of food foreign matter detection, two trends exist, one is to utilize a multi-energy spectrum to realize the discrimination of material attributes and improve the foreign matter identification rate; one point is that a Time Delay Integration (TDI) is used to amplify a small signal and improve the signal-to-noise ratio, so as to identify finer foreign matters. In the design of a conventional X-ray linear array detector for detecting foreign matters in food, monocrystalline silicon is used as a photodiode for receiving visible light, and the price and performance requirements are balanced; in addition, pixel size requirements, typically standardized to 0.4mm, are imposed. That is, the conventional line scanning X-ray detector is a single-row 0.4mmpitch single crystal silicon linear array, and obviously has the following disadvantages:
1. under the consideration of cost, the linear array detector is basically in a single-energy form, foreign matters can be judged only through the change of gray values, and the risks of missing judgment and misjudgment exist.
2. Most of them have no material attribute identification capability, resulting in increased difficulty in identifying foreign matters in low-density and thin objects.
3. The one-dimensional single-row linear array has the advantages that the pixels are generally 0.4mm of the standard, the requirement of a ray source is high, high signal to noise ratio is realized by large mA exposure under certain kV, a high-power ray source is needed, a good radiator and a good scheme are provided, the system cost is increased, and the stability and the durability of the system are also reduced.
4. Due to the limitation of a mechanical structure, the size compression is needed in width and height, so that the subsystem design and development are difficult to be carried out by combining dual-energy material attribute discrimination and a multi-row TDI sensor technology, and the two technologies are realized simultaneously, so that the price is higher and the market competitiveness is insufficient.
5. For the meat product detected bone fragments, single energy obviously has defects, and high-level identification and rejection cannot be realized, and double energy fusion, subtraction contrast enhancement and substance identification have more advantages.
6. Wafers of single crystal silicon (wafers) are mainly 8 inches, and currently, in the field of food foreign matter detection, FSI (front side irradiation) is basically adopted, so that the design of smaller pixels and more rows cannot be achieved. Under the constraint of collimation width after 3.2mm, 4 rows can be realized under the condition of 0.4mmpitch in the general FSI process. With the BSI process, 8 rows can be achieved at 0.4mm pitch.
Therefore, it is desirable to solve the problem of how to improve the resolution of the line detector at low cost.
Disclosure of Invention
In view of the above drawbacks of the prior art, an object of the present invention is to provide a method, a system, a medium, and an apparatus for scanning a multi-row dual-energy linear array detector, so as to solve the problem of improving the resolution of the linear array detector at low cost in the prior art.
In order to achieve the above objects and other related objects, the present invention provides a scanning method for a multi-row dual-energy linear array detector, comprising the following steps: acquiring high-energy image data and low-energy image data by using a plurality of monocrystalline silicon multi-row dual-energy linear array detectors; monocrystalline silicon multirow dual energy linear array detector includes: the single crystal silicon low-energy PD module with more than or equal to four rows, the single crystal silicon high-energy PD module with more than or equal to four rows, the reading chip, the connector and the middle layer are PCB boards embedded with copper filters, the single crystal silicon low-energy PD module with more than or equal to four rows is arranged on one side of the PCB boards, and the single crystal silicon high-energy PD module with more than or equal to four rows is arranged on the other side of the PCB boards; the monocrystalline silicon low-energy PD module which is more than or equal to four rows, the monocrystalline silicon high-energy PD module which is more than or equal to four rows, the reading chip and the connector are electrically connected on the PCB; processing the high-energy image data and the low-energy image data by adopting a DTDI accumulation working process based on an FPGA circuit to obtain the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector; calculating the transparency of each pixel point by adopting a mapping formula based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector, and converting the transparency into hue, saturation and brightness; and fusing the hue, saturation and brightness of each pixel point based on a conversion formula to generate an RGB image.
In order to achieve the above object, the present invention further provides a scanning system for a multi-row dual-energy linear array detector, comprising: the device comprises an acquisition module, an accumulation module, a calculation module and a generation module;
the acquisition module is used for acquiring high-energy image data and low-energy image data by using a plurality of monocrystalline silicon multi-row dual-energy linear array detectors; monocrystalline silicon multirow dual energy linear array detector includes: the single crystal silicon low-energy PD module with more than or equal to four rows, the single crystal silicon high-energy PD module with more than or equal to four rows, the reading chip, the connector and the middle layer are PCB boards embedded with copper filters, the single crystal silicon low-energy PD module with more than or equal to four rows is arranged on one side of the PCB boards, and the single crystal silicon high-energy PD module with more than or equal to four rows is arranged on the other side of the PCB boards; the monocrystalline silicon low-energy PD module which is more than or equal to four rows, the monocrystalline silicon high-energy PD module which is more than or equal to four rows, the reading chip and the connector are electrically connected on the PCB; the accumulation module is used for processing the high-energy image data and the low-energy image data by adopting a DTDI accumulation working process based on the FPGA circuit to obtain the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector; the calculation module is used for calculating the transparency of each pixel point by adopting a mapping formula based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector, and converting the transparency into hue, saturation and brightness; the generating module is used for fusing the hue, the saturation and the brightness of each pixel point based on a conversion formula to generate an RGB image.
To achieve the above object, the present invention further provides a computer-readable storage medium, on which a computer program is stored, where the computer program, when executed by a processor, implements any one of the above multi-row linear array detector scanning methods.
In order to achieve the above object, the present invention further provides a scanning device for a multi-row linear array detector, comprising: a processor and a memory; the memory is used for storing a computer program; the processor is connected with the memory and is used for executing the computer program stored in the memory so as to enable the multi-row linear array detector scanning device to execute any one of the above-mentioned multi-row linear array detector scanning methods.
Finally, the invention also provides a multi-row linear array detector scanning system, which comprises a multi-row linear array detector scanning device and an FPGA circuit; the scanning device of the multi-row linear array detector comprises: the device comprises at least four rows of monocrystalline silicon low-energy PD modules, at least four rows of monocrystalline silicon high-energy PD modules, a reading chip, a connector and a PCB, wherein the middle layer of the PCB is a filter layer; the monocrystalline silicon low-energy PD module which is more than or equal to four rows, the monocrystalline silicon high-energy PD module which is more than or equal to four rows, the reading chip and the connector are electrically connected with the PCB; the FPGA circuit is used for realizing splicing, packaging and uploading of the high-energy image data and the low-energy image data to an upper computer.
As described above, the scanning method, system, medium and apparatus for a multi-row linear array detector of the present invention have the following advantages: for achieving high spatial resolution at low X-ray doses.
Drawings
Fig. 1a is a flowchart illustrating a scanning method of a multi-row dual-energy linear array detector according to an embodiment of the present invention;
fig. 1b is a flow chart of a scanning method of a multi-row dual-energy linear array detector in another embodiment of the invention;
fig. 1c is a flowchart illustrating a scanning method for a multi-row dual-energy linear array detector according to another embodiment of the present invention;
fig. 2 is a schematic structural diagram of a multi-row dual-energy linear array detector scanning system according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a multi-row dual-energy linear array detector scanning apparatus according to an embodiment of the present invention;
fig. 4a is a schematic structural diagram of a scanning device of a multi-row dual-energy linear array detector in another embodiment of the scanning system of the multi-row dual-energy linear array detector of the present invention;
fig. 4b is a structural side view of a multi-row dual-energy linear array detector scanning device of a multi-row dual-energy linear array detector scanning system according to another embodiment of the invention;
fig. 4c is a schematic structural diagram of a multi-row dual-energy linear array detector scanning system according to another embodiment of the present invention;
FIG. 4d is a schematic flow chart of a scanning system of a multi-row dual-energy linear array detector according to another embodiment of the invention
Description of the element reference numerals
21 acquisition module
22 accumulation module
23 calculation module
24 generating module
31 processor
32 memory
4 double-row PD module
41 monocrystalline silicon low-energy PD module
42 monocrystalline silicon high-energy PD module
43 readout chip
44 connector
45 middle layer is PCB board of embedding copper filtration
5 FPGA circuit
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict.
It should be noted that the drawings provided in the following embodiments are only for illustrating the basic idea of the present invention, so that the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, the type, quantity and proportion of the components in actual implementation can be changed freely, and the layout of the components can be more complicated.
The invention discloses a multi-row dual-energy linear array detector scanning method, a system, a medium and a device, which are used for realizing high spatial resolution under the condition of low X-ray dose.
As shown in fig. 1a, in an embodiment, the method for scanning a multi-row dual-energy linear array detector of the present invention includes the following steps:
s11, acquiring high-energy image data and low-energy image data by using a plurality of monocrystalline silicon multi-row dual-energy linear array detectors; monocrystalline silicon multirow dual energy linear array detector includes: the single crystal silicon low-energy PD module with more than or equal to four rows, the single crystal silicon high-energy PD module with more than or equal to four rows, the reading chip, the connector and the middle layer are PCB boards embedded with copper filters, the single crystal silicon low-energy PD module with more than or equal to four rows is arranged on one side of the PCB boards, and the single crystal silicon high-energy PD module with more than or equal to four rows is arranged on the other side of the PCB boards; the monocrystalline silicon low-energy PD module more than or equal to four rows, the monocrystalline silicon high-energy PD module more than or equal to four rows, the reading chip and the connector are electrically connected on the PCB.
And step S12, processing the high-energy image data and the low-energy image data by adopting a DTDI accumulation working process based on the FPGA circuit to obtain the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector.
Specifically, the processing of the high-energy image data and the low-energy image data by using a dtdi (digital time delay integration) accumulation workflow based on an FPGA circuit to obtain the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector includes: the FPGA circuit opens a plurality of cache spaces, and respectively stores data of the monocrystalline silicon low-energy PD module and the monocrystalline silicon high-energy PD module in each row; and when the accumulation of the preset levels is finished, outputting the output signal intensity of a frame of high-energy detector or the output signal intensity of a low-energy detector. As shown in fig. 1b, a plurality of monocrystalline silicon multi-row dual-energy linear array detectors are used for collecting high-energy image data and low-energy image data; monocrystalline silicon multirow dual energy linear array detector includes: eight rows of monocrystalline silicon low-energy PD modules and eight rows of monocrystalline silicon high-energy PD modules. The FPGA circuit opens a plurality of cache spaces, and respectively stores data of the monocrystalline silicon low-energy PD module and the monocrystalline silicon high-energy PD module in each row; and when the accumulation of the preset eight levels is finished, outputting the output signal intensity of a frame of high-energy detector or the output signal intensity of a low-energy detector. In fig. 1b the output 8A is first. The FPGA circuit is used as an operation core to realize DTDI (digital integration delay): the FPGA circuit opens a plurality of cache spaces for storing each row of data; signal accumulation of the same target information is realized through an adder; outputting a frame (one line) of data after finishing the 8-level accumulation; because the calculation is performed in the FPGA circuit, the time consumption is low, and the high-speed characteristic of the single-row linear array can still be achieved; data after DTDI is used, the signal-to-noise ratio is improved, the contrast is enhanced, and foreign matters or abnormal gaps can be observed from a gray image more easily.
And step S13, calculating the transparency of each pixel point by adopting a mapping formula based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector, and converting the transparency into hue, saturation and brightness.
Specifically, the calculating the transparency of each pixel channel based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector by using a mapping formula, and the converting the transparency into hue, saturation and brightness includes: acquiring the output signal intensity of a no-load high-energy detector and the output signal intensity of a no-load low-energy detector of a plurality of monocrystalline silicon multi-row dual-energy linear array detectors in the no-load state; acquiring the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector of two critical substances with a first atomic number and a second atomic number, respectively calculating the high-energy transparency and the low-energy transparency of the two critical substances with the first atomic number and the second atomic number, and fitting a boundary curve based on the high-energy transparency and the low-energy transparency of the two critical substances with the first atomic number and the second atomic number; acquiring the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector of an object to be detected, and calculating the corresponding high-energy transparency and low-energy transparency; and calculating the hue, saturation and brightness of each pixel point by adopting a hue, saturation and brightness calculation mode according to the positions of the high-energy transparency and the low-energy transparency corresponding to each pixel point in a boundary curve coordinate system.
Specifically, the output signal intensity of a no-load high-energy detector and the output signal intensity of a no-load low-energy detector of a plurality of monocrystalline silicon multi-row dual-energy linear array detectors during no-load are acquired.
Figure BDA0002887727360000061
The output signal intensity of the no-load high-energy detector is I0HAnd the output signal intensity of the no-load low-energy detector is I0L. Wherein: i isH、ILRespectively obtaining the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector; i is0H、I0LRespectively obtaining the output signal intensity of a no-load high-energy detector and the output signal intensity of a no-load low-energy detector; mu.s(E,Z)A line attenuation coefficient of the detected object; z is the atomic number of the detected object; t is the thickness of the detected object along the ray direction; eH、ELThe energy of the X-rays received by the high and low energy detectors, respectively.
The method comprises the steps of collecting the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector of two critical substances with a first atomic number and a second atomic number, calculating the high-energy transparency and the low-energy transparency of the two critical substances with the first atomic number and the second atomic number respectively, and fitting a boundary curve based on the high-energy transparency and the low-energy transparency of the two critical substances with the first atomic number and the second atomic number. Specifically, the first atomic number is 10, and the second atomic number is 18. And calculating the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector of two critical substances with atomic numbers Z-10 and Z-18, respectively calculating the high-energy transparency and the low-energy transparency, and fitting a boundary curve by using a polynomial. T isHFor high energy transparency, TLIs low energy transparency. High and low energy transparency of the first atomic number 10 and different thicknesses of the detected first atomic number 10 material are simulated using polynomialsThe boundary curve of the first material with atomic number 10 is obtained, and the boundary curve of the second material with atomic number 18 is obtained by polynomial fitting of the high and low energy transparency of the second material with atomic number 18 and the different thicknesses of the second material with atomic number 18. The boundary curve may be obtained by fitting the detected different thicknesses of the first material with an atomic number of 10 as an x-axis, and the ratio of the high energy transparency to the low energy transparency of the detected first material with an atomic number of 10 as a y-axis, so as to obtain the boundary curve of the first material with an atomic number of 10. The boundary curve may be obtained by fitting the detected different thicknesses of the second material with an atomic number of 18 as an x-axis, and the ratio of the high energy transparency to the low energy transparency of the detected second material with an atomic number of 18 as a y-axis, so as to obtain the boundary curve of the second material with an atomic number of 18. And superposing the two boundary curves to obtain the boundary curves of the two critical substances.
The following formula is a high and low energy transparency calculation formula:
Figure BDA0002887727360000062
and acquiring the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector of the object to be detected, and calculating the corresponding high-energy transparency and low-energy transparency. Calculating the output signal intensity I of the high-energy detector of the object to be detected based on the following formulaHAnd low energy detector output signal intensity IL。
Figure BDA0002887727360000071
Calculate the corresponding T based on the following formulaHHigh energy transparency and TLLow energy transparency.
Figure BDA0002887727360000072
And calculating the hue, saturation and brightness of each pixel point by adopting a hue, saturation and brightness calculation mode according to the positions of the high-energy transparency and the low-energy transparency corresponding to each pixel point in a boundary curve coordinate system. The positions of the high-energy transparency and the low-energy transparency corresponding to each pixel point in the boundary curve coordinate system are the positions of the high-energy transparency and the low-energy transparency in the boundary curve coordinate system obtained by adopting the same fitting method. For example, the boundary curve may be obtained by fitting the x-axis of the different thicknesses of the detected first atomic number 10 material, and the y-axis of the ratio of the high energy transparency to the low energy transparency of the detected first atomic number 10 material, so as to obtain the boundary curve of the first atomic number 10 material. Then, according to the position of the ratio of the corresponding high-energy transparency and the low-energy transparency of the object to be detected in the boundary curve coordinate system. And calculating the hue, saturation and brightness of each pixel point by adopting a hue, saturation and brightness calculation mode.
And (3) hue calculation: first, a different hue range is defined for each region, and the hue range of the organic region is R1-R2Of the mixture is G1-G2Inorganic is B1-B2; taking (TH, TL) falling in the mixture zone as an example,
the hue H is calculated as:
Figure BDA0002887727360000073
the hue H of the organic matter is calculated by the following formula:
Figure BDA0002887727360000074
the hue H of the inorganic substance is calculated by the formula:
Figure BDA0002887727360000075
saturation calculation
S＝S0+(1-S0)(TH+TL)/2
WhereinS0The saturation reference value is used to prevent the pixels with low gray level from becoming gray due to too low saturation.
Luminance calculation
Figure BDA0002887727360000081
And step S14, fusing the hue, saturation and brightness of each pixel point based on a conversion formula to generate an RGB image.
Specifically, the image rendering algorithm based on the HSB color mode fuses hue, saturation and brightness of each pixel point to generate an RGB image. The conversion formula is an existing conversion formula.
In particular, the principle of contrast lifting is shown in fig. 1 c. The ray source still adopts a single source, narrow fan-shaped beams are transmitted to a plurality of monocrystalline silicon multi-row dual-energy linear array detectors through the collimating slit, and the plurality of monocrystalline silicon multi-row dual-energy linear array detectors acquire high-energy image data and low-energy image data through one-time exposure; then, the two images are processed by an online algorithm computing technology, an interested target is extracted, and a foreign body is identified. The principle of the algorithm is that the intensity performance of the high-energy image and the low-energy image is different due to different X-ray transmission efficiencies of different materials; the intensity level is adjusted according to the ratio therebetween, and then the unnecessary portion is subtracted, and the target material information is extracted. Through a contrast change algorithm, double-energy subtraction is realized, non-interesting background information is subtracted, and the contrast of a target area is improved, so that finer foreign matters are identified; through calculation and conversion of dual-energy data, after the X-ray perspective technology and the dual-energy technology are fused, the equivalent atomic number of a substance at any position can be obtained, and color coding is provided according to different atomic numbers of the substance: firstly, calculating an R value according to high-energy and low-energy data of a double-energy transmission image of a known substance, and coloring an object according to the R value; secondly, establishing a mathematical model for converting gray data into an HSB color space, and converting the HSB color space into an RGB space based on an HSB-to-RGB formula; finally, through dual energy, the problem of difficult recognition of low-density and small objects is solved, and accurate grabbing recognition can be performed through color difference.
As shown in fig. 2, in an embodiment, the multi-row dual-energy linear array detector scanning system of the present invention includes an acquisition module 21, an accumulation module 22, a calculation module 23, and a generation module 24; the acquisition module is used for acquiring high-energy image data and low-energy image data by using a plurality of monocrystalline silicon multi-row dual-energy linear array detectors; monocrystalline silicon multirow dual energy linear array detector includes: the single crystal silicon low-energy PD module with more than or equal to four rows, the single crystal silicon high-energy PD module with more than or equal to four rows, the reading chip, the connector and the middle layer are PCB boards embedded with copper filters, the single crystal silicon low-energy PD module with more than or equal to four rows is arranged on one side of the PCB boards, and the single crystal silicon high-energy PD module with more than or equal to four rows is arranged on the other side of the PCB boards; the monocrystalline silicon low-energy PD module which is more than or equal to four rows, the monocrystalline silicon high-energy PD module which is more than or equal to four rows, the reading chip and the connector are electrically connected on the PCB; the accumulation module is used for processing the high-energy image data and the low-energy image data by adopting a DTDI accumulation working process based on the FPGA circuit to obtain the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector; the calculation module is used for calculating the transparency of each pixel point by adopting a mapping formula based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector, and converting the transparency into hue, saturation and brightness; the generating module is used for fusing the hue, the saturation and the brightness of each pixel point based on a conversion formula to generate an RGB image.
Specifically, the step of processing the high-energy image data and the low-energy image data by using a DTDI accumulation workflow based on an FPGA circuit to obtain the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector includes: the FPGA circuit opens a plurality of cache spaces, and respectively stores data of the monocrystalline silicon low-energy PD module and the monocrystalline silicon high-energy PD module in each row; and when the accumulation of the preset levels is finished, outputting the output signal intensity of a frame of high-energy detector or the output signal intensity of a low-energy detector.
Specifically, the calculating module is configured to calculate the transparency of each pixel point by using a mapping formula based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector, and converting the transparency into hue, saturation, and brightness includes: acquiring the output signal intensity of a no-load high-energy detector and the output signal intensity of a no-load low-energy detector of a plurality of monocrystalline silicon multi-row dual-energy linear array detectors in the no-load state; acquiring the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector of two critical substances with a first atomic number and a second atomic number, respectively calculating the high-energy transparency and the low-energy transparency of the two critical substances with the first atomic number and the second atomic number, and fitting a boundary curve based on the high-energy transparency and the low-energy transparency of the two critical substances with the first atomic number and the second atomic number; acquiring the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector of an object to be detected, and calculating the corresponding high-energy transparency and low-energy transparency; and calculating the hue, saturation and brightness of each pixel point by adopting a hue, saturation and brightness calculation mode according to the positions of the high-energy transparency and the low-energy transparency corresponding to each pixel point in a boundary curve coordinate system.
It should be noted that the structures and principles of the acquisition module 21, the accumulation module 22, the calculation module 23, and the generation module 24 correspond to the steps in the scanning method of the multi-row linear array detector one to one, and therefore, no further description is given here.
It should be noted that the division of the modules of the above system is only a logical division, and the actual implementation may be wholly or partially integrated into one physical entity, or may be physically separated. And these modules can be realized in the form of software called by processing element; or may be implemented entirely in hardware; and part of the modules can be realized in the form of calling software by the processing element, and part of the modules can be realized in the form of hardware. For example, the x module may be a processing element that is set up separately, or may be implemented by being integrated in a chip of the apparatus, or may be stored in a memory of the apparatus in the form of program code, and the function of the x module may be called and executed by a processing element of the apparatus. Other modules are implemented similarly. In addition, all or part of the modules can be integrated together or can be independently realized. The processing element described herein may be an integrated circuit having signal processing capabilities. In implementation, each step of the above method or each module above may be implemented by an integrated logic circuit of hardware in a processor element or an instruction in the form of software.
For example, the above modules may be one or more integrated circuits configured to implement the above methods, such as: one or more Specific Integrated circuits (ASICs), or one or more Microprocessors (MPUs), or one or more Field Programmable Gate arrays (FPGA circuits), etc. For another example, when one of the above modules is implemented in the form of a Processing element scheduler code, the Processing element may be a general-purpose processor, such as a Central Processing Unit (CPU) or other processor capable of calling program code. For another example, these modules may be integrated together and implemented in the form of a system-on-a-chip (SOC).
In an embodiment of the present invention, the present invention further includes a computer-readable storage medium, on which a computer program is stored, where the computer program, when executed by a processor, implements any one of the above-mentioned multi-row dual-energy linear array detector scanning methods.
Those of ordinary skill in the art will understand that: all or part of the steps for implementing the above method embodiments may be performed by hardware associated with a computer program. The aforementioned computer program may be stored in a computer readable storage medium. When executed, the program performs steps comprising the method embodiments described above; and the aforementioned storage medium includes: various media that can store program codes, such as ROM, RAM, magnetic or optical disks.
As shown in fig. 3, in an embodiment, the multi-row dual-energy linear array detector scanning device of the present invention includes: a processor 31 and a memory 32; the memory 32 is for storing a computer program; the processor 31 is connected to the memory 32 and configured to execute a computer program stored in the memory 32, so that the multi-row dual-energy linear array detector scanning apparatus executes any one of the multi-row linear array detector scanning methods.
Specifically, the memory 32 includes: various media that can store program codes, such as ROM, RAM, magnetic disk, U-disk, memory card, or optical disk.
Preferably, the Processor 31 may be a general-purpose Processor, including a Central Processing Unit (CPU), a Network Processor (NP), and the like; the Integrated Circuit may also be a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA Circuit), or other Programmable logic device, discrete Gate or transistor logic device, or discrete hardware components.
Specifically, as shown in fig. 4a-4b, the multi-row dual-energy linear array detector (dual-row PD module 4) of single crystal silicon comprises: the semiconductor device comprises a monocrystalline silicon low-energy PD module 41(L-PDM) with more than or equal to four rows, a monocrystalline silicon high-energy PD module 42(H-PDM) with more than or equal to four rows, a read-out chip 43 (ROIC), a connector 44(connector) and a PCB 45 with an embedded copper filter as an intermediate layer, wherein the monocrystalline silicon low-energy PD module 41 with more than or equal to four rows is arranged on one side of the PCB, and the monocrystalline silicon high-energy PD module 42 with more than or equal to four rows is arranged on the other side of the PCB; the monocrystalline silicon low-energy PD module 41 with the number of rows being equal to or greater than four, the monocrystalline silicon high-energy PD module 42 with the number of rows being equal to or greater than four, the reading chip 43 and the connector 44 are all electrically connected on the PCB. For example: the single crystal silicon low energy PD module 41 having four or more rows may be: a four-row single crystal silicon low energy PD module, a six-row single crystal silicon low energy PD module, or an eight-row single crystal silicon low energy PD module. The low-energy PD module is a low-energy photodiode module (L-PDM), and the high-energy PD module is a high-energy photodiode module (H-PDM). The intermediate layer is a copper sheet 451. The monocrystalline silicon low-energy PD module 41 with more than or equal to four rows and the monocrystalline silicon high-energy PD module 42 with more than or equal to four rows are used for transmitting information to the reading chip 43, the reading chip transmits the information to the connector 44, so that the connector 44 forwards the information to the FPGA circuit 5, the FPGA circuit 5 opens a plurality of buffer spaces, and the data of the monocrystalline silicon low-energy PD module and the monocrystalline silicon high-energy PD module 42 with each row are respectively stored; and when the accumulation of the preset levels is finished, outputting the output signal intensity of a frame of high-energy detector or the output signal intensity of a low-energy detector.
The two PD sensors are designed to be a monocrystalline silicon low-energy PD module 41(L-PDM) which is more than or equal to four rows and a monocrystalline silicon high-energy PD module 42(H-PDM) which is more than or equal to four rows, can sense two X-ray energy spectrums (soft rays and hard rays), and the size of a slit of a collimator based on the whole system is 0.3-0.5 mm, the pitch is 0.4mm in principle, the PD module of a monocrystalline silicon PD scheme of 8 rows is designed, and the 0.4mm is the standard pixel size of food foreign body detection. The PD (photodiode) senses visible light information and converts the visible light information into corresponding electric signals, and the two PD modules do not directly convert X-ray signals. Thus, by different selection of the two scintillator materials (based on different absorption conversion characteristics of the X-ray), the conversion of the X-ray to visible light of the two energy spectra is achieved. The upper-layer monocrystalline silicon low-energy PD module does not completely absorb and convert soft X-ray completely, low-energy-level X-ray is further isolated through a filtering copper sheet with a certain thickness (the thickness is generally 0.1-0.6 mm), and the high-energy PD module is ensured to absorb and convert high-energy-level X-ray, so that the calculation of equivalent atomic number of material attributes by a dual-energy algorithm is promoted, and accurate material attribute identification (organic matter, inorganic matter or mixture) is realized. The ROIC (readout chip 43) adopts a 256-channel form, and can receive analog information input (2 × 128channels) of every two rows of pixels, so as to realize signal acquisition, integral amplification and a/D conversion, and simultaneously transmit the digital signal to a signal processing circuit through a connector for further processing of an image. All the pixel channels are independent, and simultaneously acquire and convert signals, so that high-speed and parallel processing is realized, the detection of a moving object is prevented from being distorted, misplaced and delayed, and the accuracy and the effectiveness of calculation are ensured.
As shown in fig. 4c, the scanning system of the multi-row dual-energy linear array detector includes: a plurality of monocrystalline silicon multi-row dual-energy linear array detectors (double rows PD module 4) and an FPGA circuit 5. The FPGA circuit 5 is used for realizing splicing, packaging and uploading of high-energy image data and low-energy image data to upper computer software, and the FPGA circuit 5 is used for opening a plurality of cache spaces and storing data of the monocrystalline silicon low-energy PD module 41 and the monocrystalline silicon high-energy PD module 42 in each row respectively; and when the accumulation of the preset levels is finished, outputting the output signal intensity of a frame of high-energy detector or the output signal intensity of a low-energy detector. And outputting the output signal intensity of the high-energy detector or the output signal intensity of the low-energy detector to a PC (upper computer).
An electronic circuit of the scanning system of the multi-row dual-energy linear array detector is shown as 4 c. The core of the hardware innovation design is the modularization of each processing unit, and the instruction signals and the data signals among each other are LVDS, so that the stability and the high speed are ensured. The PD sensorboard integrates a PD module and an ROIC, and ensures that signals of all channels are simultaneously acquired, simultaneously integrated and amplified and simultaneously subjected to A/D conversion; the control of the read board to the PD sensor board is realized by using the FPC through a connector interface, and two functions are realized, wherein one function is to control the ROIC to work through an instruction, and the other function is to realize the parallel transmission of a plurality of paths of digital signals through the LVDS technology; after the read board realizes the data splicing, the multi-path parallel transmission is carried out by utilizing the LVDS data transmission technology, and the packing and uploading work is finished on the core board; the Core board provides a power supply scheme to ensure the working voltage of each module; PD sensor board (monocrystalline silicon multirow dual energy linear array detector), readboard (reading and publishing) and core board's modular design, FPGA circuit 5 includes: read boards and core boards. The method is beneficial to system stability and power consumption reduction, and realizes the application of different detection sizes through the combination of different quantities, namely a platform concept.
In the FPGA circuit, performing signal superposition based on configured M-stage parameters, performing superposition according to the law of Row superposition and Row shift, and outputting the same information points accumulated for M times; when the running direction of the conveying belt is changed, starting points of TDI are different, overturning and accumulating are needed, and the splicing direction needs to be consistent with the Scan direction; once N exposures are made for a job, the final image forms an image height of N + M-1, as shown in the 8 exposure 8-stage TDI example shown in FIG. 4d below.
The invention is based on the monocrystalline silicon sensor technology, realizes the application of multi-row small pixel size by using the packaging process of BSI, and can fully cover various small-size foreign matters and detect with low density. Based on the DTDI technology, the delay accumulation of the ray energy is realized, the signal to noise ratio is improved, the performance energy of the bulb tube is reduced (the requirements of the whole machine on heat dissipation and power consumption of the bulb tube are reduced), the protection level is reduced, the equipment is more stable, the durability is better, the image is clearer, and the misjudgment rate of algorithm foreign matter rejection is reduced. Synchronously, the high-low sensors are used for absorbing and converting the radiation energy spectrum at two energy levels, dual-energy data are collected at the same time, the target image is colored, the real-time discrimination of the material attribute is realized, and the depth and the width of foreign matter attribute recognition are expanded. The sensor technology and the electronics technology of the dual-energy and TDI distinguishing technologies are integrated and synchronously realized in one subsystem, so that the accuracy of data, the real-time performance and the high efficiency of distinguishing are ensured, the cost of a product is greatly reduced, and the cost performance is improved.
To summarize: the method is suitable for detecting foreign matters or defects of various doors, particularly for detecting high frame rate. A product can be basically covered completely, for example, the dual-energy technology can only use one of the products according to the use requirement, and the customer can flexibly select the product. The signal detection of two technical principles is realized, the identification capability is improved, and the contrast image of the image is enhanced (the signal-to-noise ratio of the image is better). The device has two technical means, hardware integration and good system stability, accords with the characteristics of small and exquisite detectors, can cover food foreign matter detection, industrial nondestructive detection and quality level judgment of industrial products such as daily necessities, bedding and the like, has wider and wider integral application range, and realizes the aim of one machine with multiple purposes. On the hardware circuit, adopt combination formula, the modularized design, when touch a module and appear unusually, available spare part replaces, has reduced maintenance time and cost, also need not maintenance engineer field support.
The invention solves the problem that some application scene pain points which cannot be automatically identified and eliminated exist in the field of food foreign body detection at present, and can realize the opening or closing of functions through software setting, so that the detection target is more definite.
In summary, the multi-row dual-energy linear array detector scanning method, system, medium and apparatus of the present invention are used to achieve high spatial resolution under low X-ray dose conditions. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (10)

1. A multi-row dual-energy linear array detector scanning method is characterized by comprising the following steps:
acquiring high-energy image data and low-energy image data by using a plurality of monocrystalline silicon multi-row dual-energy linear array detectors; monocrystalline silicon multirow dual energy linear array detector includes: the single crystal silicon low-energy PD module with more than or equal to four rows, the single crystal silicon high-energy PD module with more than or equal to four rows, the reading chip, the connector and the middle layer are PCB boards embedded with copper filters, the single crystal silicon low-energy PD module with more than or equal to four rows is arranged on one side of the PCB boards, and the single crystal silicon high-energy PD module with more than or equal to four rows is arranged on the other side of the PCB boards; the monocrystalline silicon low-energy PD module which is more than or equal to four rows, the monocrystalline silicon high-energy PD module which is more than or equal to four rows, the reading chip and the connector are electrically connected on the PCB;
processing the high-energy image data and the low-energy image data by adopting a DTDI accumulation working process based on an FPGA circuit to obtain the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector;
calculating the transparency of each pixel point by adopting a mapping formula based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector, and converting the transparency into hue, saturation and brightness;
and fusing the hue, saturation and brightness of each pixel point based on a conversion formula to generate an RGB image.
2. The multi-row dual-energy linear array detector scanning method of claim 1, wherein the processing of the high-energy image data and the low-energy image data to obtain the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector by using a DTDI accumulation workflow based on an FPGA circuit comprises:
the FPGA circuit opens a plurality of cache spaces, and respectively stores data of the monocrystalline silicon low-energy PD module and the monocrystalline silicon high-energy PD module in each row; and when the accumulation of the preset levels is finished, outputting the output signal intensity of a frame of high-energy detector or the output signal intensity of a low-energy detector.
3. The multi-row dual-energy linear array detector scanning method of claim 1, wherein the calculating the transparency of each pixel channel based on the high-energy detector output signal intensity and the low-energy detector output signal intensity using a mapping formula, and the converting the transparency into hue, saturation and brightness comprises:
acquiring the output signal intensity of a no-load high-energy detector and the output signal intensity of a no-load low-energy detector of a plurality of monocrystalline silicon multi-row dual-energy linear array detectors in the no-load state;
acquiring the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector of two critical substances with a first atomic number and a second atomic number, respectively calculating the high-energy transparency and the low-energy transparency of the two critical substances with the first atomic number and the second atomic number, and fitting a boundary curve based on the high-energy transparency and the low-energy transparency of the two critical substances with the first atomic number and the second atomic number;
acquiring the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector of an object to be detected, and calculating the corresponding high-energy transparency and low-energy transparency;
and calculating the hue, saturation and brightness of each pixel point by adopting a hue, saturation and brightness calculation mode according to the positions of the high-energy transparency and the low-energy transparency corresponding to each pixel point in a boundary curve coordinate system.
4. The multi-row dual-energy linear array detector scanning method as recited in claim 1, wherein the first atomic number is 10, and the second atomic number is 18.
5. A multi-row dual-energy linear array detector scanning system is characterized by comprising: the device comprises an acquisition module, an accumulation module, a calculation module and a generation module;
the acquisition module is used for acquiring high-energy image data and low-energy image data by using a plurality of monocrystalline silicon multi-row dual-energy linear array detectors; monocrystalline silicon multirow dual energy linear array detector includes: the single crystal silicon low-energy PD module with more than or equal to four rows, the single crystal silicon high-energy PD module with more than or equal to four rows, the reading chip, the connector and the middle layer are PCB boards embedded with copper filters, the single crystal silicon low-energy PD module with more than or equal to four rows is arranged on one side of the PCB boards, and the single crystal silicon high-energy PD module with more than or equal to four rows is arranged on the other side of the PCB boards; the monocrystalline silicon low-energy PD module which is more than or equal to four rows, the monocrystalline silicon high-energy PD module which is more than or equal to four rows, the reading chip and the connector are electrically connected on the PCB;
the accumulation module is used for processing the high-energy image data and the low-energy image data by adopting a DTDI accumulation working process based on the FPGA circuit to obtain the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector;
the calculation module is used for calculating the transparency of each pixel point by adopting a mapping formula based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector, and converting the transparency into hue, saturation and brightness;
the generating module is used for fusing the hue, the saturation and the brightness of each pixel point based on a conversion formula to generate an RGB image.
6. The multi-row dual-energy linear array detector scanning system of claim 5, wherein the accumulation module is configured to process the high-energy image data and the low-energy image data to obtain the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector by using a DTDI accumulation workflow based on an FPGA circuit, and comprises:
the FPGA circuit opens a plurality of cache spaces, and respectively stores data of the monocrystalline silicon low-energy PD module and the monocrystalline silicon high-energy PD module in each row; and when the accumulation of the preset levels is finished, outputting the output signal intensity of a frame of high-energy detector or the output signal intensity of a low-energy detector.
7. The multi-row dual-energy linear array detector scanning system as claimed in claim 5, wherein the calculating module is configured to calculate the transparency of each pixel point by using a mapping formula based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector, and converting the transparency into hue, saturation and brightness comprises:
acquiring the output signal intensity of a no-load high-energy detector and the output signal intensity of a no-load low-energy detector of a plurality of monocrystalline silicon multi-row dual-energy linear array detectors in the no-load state;
acquiring the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector of two critical substances with a first atomic number and a second atomic number, respectively calculating the high-energy transparency and the low-energy transparency of the two critical substances with the first atomic number and the second atomic number, and fitting a boundary curve based on the high-energy transparency and the low-energy transparency of the two critical substances with the first atomic number and the second atomic number;
acquiring the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector of an object to be detected, and calculating the corresponding high-energy transparency and low-energy transparency;
and calculating the hue, saturation and brightness of each pixel point by adopting a hue, saturation and brightness calculation mode according to the positions of the high-energy transparency and the low-energy transparency corresponding to each pixel point in a boundary curve coordinate system.
8. A computer readable storage medium having a computer program stored thereon, wherein the computer program is executed by a processor to implement the multi-row dual energy linear array detector scanning method as recited in any one of claims 1 to 4.
9. The utility model provides a multirow dual energy linear array detector scanning device which characterized in that includes: a processor and a memory;
the memory is used for storing a computer program;
the processor is connected with the memory and is used for executing the computer program stored in the memory so as to enable the multi-row linear array detector scanning device to execute the multi-row linear array detector scanning method in any one of claims 1 to 4.
10. A multi-row dual-energy linear array detector scanning system is characterized by comprising a multi-row dual-energy linear array detector scanning device and an FPGA circuit;
multirow dual energy linear array detector scanning device includes: the single crystal silicon low-energy PD module with more than or equal to four rows, the single crystal silicon high-energy PD module with more than or equal to four rows, the reading chip, the connector and the middle layer are PCB boards embedded with copper filters, the single crystal silicon low-energy PD module with more than or equal to four rows is arranged on one side of the PCB boards, and the single crystal silicon high-energy PD module with more than or equal to four rows is arranged on the other side of the PCB boards; the monocrystalline silicon low-energy PD module which is more than or equal to four rows, the monocrystalline silicon high-energy PD module which is more than or equal to four rows, the reading chip and the connector are electrically connected on the PCB;
the FPGA circuit is used for realizing splicing, packaging and uploading of the high-energy image data and the low-energy image data to the upper computer software for image post-processing.
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