CN112836853A - 一种基于深度学习和热交换法的氧化镓制备方法及系统 - Google Patents

一种基于深度学习和热交换法的氧化镓制备方法及系统 Download PDF

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CN112836853A
CN112836853A CN202011638983.3A CN202011638983A CN112836853A CN 112836853 A CN112836853 A CN 112836853A CN 202011638983 A CN202011638983 A CN 202011638983A CN 112836853 A CN112836853 A CN 112836853A
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gallium oxide
preparation
neural network
network model
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齐红基
王晓亮
陈端阳
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Hangzhou Fujia Gallium Technology Co Ltd
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Hangzhou Fujia Gallium Technology Co Ltd
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Priority to CN202011638983.3A priority Critical patent/CN112836853A/zh
Priority to PCT/CN2021/075545 priority patent/WO2022141750A1/fr
Publication of CN112836853A publication Critical patent/CN112836853A/zh
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06Q—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES; SYSTEMS OR METHODS SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES, NOT OTHERWISE PROVIDED FOR
    • G06Q10/00—Administration; Management
    • G06Q10/04—Forecasting or optimisation specially adapted for administrative or management purposes, e.g. linear programming or "cutting stock problem"
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/04—Architecture, e.g. interconnection topology
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/08—Learning methods

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  • Engineering & Computer Science (AREA)
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  • Crystals, And After-Treatments Of Crystals (AREA)
CN202011638983.3A 2020-12-31 2020-12-31 一种基于深度学习和热交换法的氧化镓制备方法及系统 Pending CN112836853A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202011638983.3A CN112836853A (zh) 2020-12-31 2020-12-31 一种基于深度学习和热交换法的氧化镓制备方法及系统
PCT/CN2021/075545 WO2022141750A1 (fr) 2020-12-31 2021-02-05 Procédé et système de préparation d'oxyde de gallium sur la base d'un apprentissage profond et procédé d'échange de chaleur

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Application Number Priority Date Filing Date Title
CN202011638983.3A CN112836853A (zh) 2020-12-31 2020-12-31 一种基于深度学习和热交换法的氧化镓制备方法及系统

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CN112836853A true CN112836853A (zh) 2021-05-25

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WO (1) WO2022141750A1 (fr)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111695287A (zh) * 2020-04-22 2020-09-22 山东天岳先进材料科技有限公司 一种预测SiC单晶炉内整体温度场的方法及设备

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006273684A (ja) * 2005-03-30 2006-10-12 Koha Co Ltd Ｉｉｉ族酸化物系単結晶の製造方法
CN103541008B (zh) * 2013-11-12 2016-01-06 上海硅酸盐研究所中试基地 一种大尺寸氧化镓单晶的生长方法及生长装置
EP3042986A1 (fr) * 2015-01-09 2016-07-13 Forschungsverbund Berlin e.V. Méthode pour la croissance de monocristaux de beta-Ga2O3 à partir de solidification de Ga2O3 en fusion contenue dans un creuset métallique, en controllant la pression partielle d'oxygène.
CN107541776A (zh) * 2017-08-14 2018-01-05 同济大学 一种大尺寸氧化镓单晶的生长设备及方法
CN109487334A (zh) * 2018-11-22 2019-03-19 太原理工大学 一种基于随机分布的泡生法蓝宝石融晶接种态控制方法
JP7115688B2 (ja) * 2019-01-25 2022-08-09 株式会社デンソー 成膜装置及び半導体装置の製造方法
KR102012809B1 (ko) * 2019-04-05 2019-08-21 충남대학교산학협력단 쌍정결함밀도의 평가방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111695287A (zh) * 2020-04-22 2020-09-22 山东天岳先进材料科技有限公司 一种预测SiC单晶炉内整体温度场的方法及设备

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