CN112834428A - Photo-thermal sensor and system for gas humidity - Google Patents
Photo-thermal sensor and system for gas humidity Download PDFInfo
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- 239000000463 material Substances 0.000 claims abstract description 129
- 239000002086 nanomaterial Substances 0.000 claims abstract description 75
- 238000010521 absorption reaction Methods 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000001514 detection method Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 3
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 181
- 239000011358 absorbing material Substances 0.000 description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 13
- 230000002745 absorbent Effects 0.000 description 13
- 239000002250 absorbent Substances 0.000 description 13
- 229910021389 graphene Inorganic materials 0.000 description 13
- 230000008859 change Effects 0.000 description 9
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 230000003993 interaction Effects 0.000 description 2
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- 239000012528 membrane Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/171—Systems in which incident light is modified in accordance with the properties of the material investigated with calorimetric detection, e.g. with thermal lens detection
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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Abstract
The invention relates to a photo-thermal sensor and a photo-thermal sensor system for gas humidity, in particular to the field of gas sensing technical devices. The application provides a photothermal sensor, the sensor includes: the substrate comprises a substrate layer, a thermal resistance material layer, an insulating medium layer, a moisture absorption material layer, a chiral nanostructure layer, a first electrode and a second electrode; in the environment to be measured, the hygroscopic material layer unit of the hygroscopic material layer expands in volume after absorbing some water, because the hygroscopic material layer unit of the hygroscopic material layer is arranged corresponding to the first unit of the chiral nanostructure unit in the chiral nanostructure layer, under the influence of the hygroscopic material layer unit, the height of the first unit is changed, so that the chiral nanostructure unit generates a height difference, the chiral nanostructure unit is changed into a three-dimensional chiral nanostructure with the height difference, the chiral nanostructure unit generates ohmic dissipation and forms heat loss under the irradiation of light, and the heat is transferred to the thermal resistance material layer below, so that the gas humidity in the environment to be measured is obtained.
Description
Technical Field
The invention relates to the technical field of gas sensing devices, in particular to a photothermal sensor and a system for gas humidity.
Background
The air humidity is a great hazard to electronic components and the whole device, and most electronic instruments are required to be operated and stored under dry conditions. For the electronics industry, moisture hazards have become one of the major factors affecting product quality. The damage of humidity to electronic instruments is that failures occur due to overlong storage time in a high humidity environment, and failures occur due to poor contact caused by finger oxidation of a computer board CPU and the like. The humidity of the production and storage environment of the products in the electronic industry should be below 40%. Some varieties also require lower humidity. .
Among the prior art, the high accuracy detects the emergence of gas humidity and passes through, resistance-type humidity piece: the principle that the resistance value of the moisture absorption membrane changes along with the change of humidity is utilized, and a carbon membrane humidity sensitive resistor and a lithium chloride humidity sheet are commonly used. The former uses high molecular polymer and conductive material carbon black, and adds adhesive to make colloidal liquid with a certain proportion, and coats the colloidal liquid on the substrate to form the resistance card; in the latter, a layer of lithium chloride alcohol solution is coated on the substrate, and when the humidity of air changes, the concentration of the lithium chloride solution changes, so that the resistance of the humidity measuring diaphragm is also changed.
However, the detection method in the prior art needs to use too many electronic devices or resistors, and the electronic devices or resistors are easy to damage and have short service life in an environment with high humidity.
Disclosure of Invention
The present invention is directed to provide a photo-thermal sensor and a system for detecting gas humidity, which solve the problems of the prior art that the detection method requires too many electronic devices or resistors, and the electronic devices or resistors are easily damaged and have a short service life in an environment with high humidity.
In order to achieve the above purpose, the embodiment of the present invention adopts the following technical solutions:
in a first aspect, the present application provides a gas humidity photothermal sensor, the sensor comprising: the substrate comprises a substrate layer, a thermal resistance material layer, an insulating medium layer, a moisture absorption material layer, a chiral nanostructure layer, a first electrode and a second electrode; the thermal resistance material layer is arranged on one side of the base layer, the first electrode and the second electrode are arranged at two ends of the thermal resistance material layer and are electrically connected with the thermal resistance material layer, the insulating medium layer is arranged on one side, away from the base layer, of the thermal resistance material layer, the moisture absorption material layer comprises a plurality of moisture absorption material layer units, the moisture absorption material layer units are periodically arranged on one side, away from the base layer, of the insulating medium layer, the chiral nanostructure layer comprises a plurality of chiral nanostructure units which are periodically arranged, the chiral nanostructure units are arranged on one side, away from the base, of the moisture absorption material layer, each chiral nanostructure unit comprises a first unit, a second unit and a third unit, the first unit and the second unit are perpendicular to the third unit and are positioned on the same side of the third unit, and the first unit of each chiral nanostructure unit is arranged corresponding to each moisture absorption material layer unit of the, and the projections of the first unit and the moisture absorption material layer unit on the substrate are superposed.
Optionally, the first, second and third cells are of different lengths.
Optionally, the vertical heights of the first, second and third cells are the same.
Optionally, two moisture absorbing material layer units in the moisture absorbing material layer are arranged in a group, and the two moisture absorbing material layer units respectively correspond to the first unit and the second unit of the chiral nanostructure unit and respectively coincide with projections of the first unit and the second unit on the substrate.
Optionally, the insulating dielectric layer is made of silicon oxide or aluminum oxide.
Optionally, the material of the thermal resistance material layer is vanadium oxide or nickel oxide.
Optionally, the material of the base layer is silicon.
Optionally, the layer of hygroscopic material has a thickness of 40nm to 60 nm.
In a second aspect, the present application provides a gas humidity photothermal and electrical sensing system comprising: a current detection device, a light source and the photothermal sensor of any one of the first aspect, wherein the light source is configured to generate light and transmit the generated light to the photothermal sensor, and wherein the positive electrode and the negative electrode of the current detection device are electrically connected to the first electrode and the second electrode of the photothermal sensor, respectively, for detecting the current generated by the photothermal sensor.
The invention has the beneficial effects that:
the application provides a gas humidity's light and heat sensor, the sensor includes: the substrate comprises a substrate layer, a thermal resistance material layer, an insulating medium layer, a moisture absorption material layer, a chiral nanostructure layer, a first electrode and a second electrode; the thermal resistance material layer is arranged on one side of the base layer, the first electrode and the second electrode are arranged at two ends of the thermal resistance material layer and are electrically connected with the thermal resistance material layer, the insulating medium layer is arranged on one side, away from the base layer, of the thermal resistance material layer, the moisture absorption material layer comprises a plurality of moisture absorption material layer units, the moisture absorption material layer units are periodically arranged on one side, away from the base layer, of the insulating medium layer, the chiral nanostructure layer comprises a plurality of chiral nanostructure units which are periodically arranged, the chiral nanostructure units are arranged on one side, away from the base, of the moisture absorption material layer, each chiral nanostructure unit comprises a first unit, a second unit and a third unit, the first unit and the second unit are perpendicular to the third unit and are positioned on the same side of the third unit, and the first unit of each chiral nanostructure unit is arranged corresponding to each moisture absorption material layer unit of, and the projections of the first unit and the moisture absorption material layer unit on the substrate are superposed, in the environment to be tested, the volume of the moisture absorption material layer unit of the moisture absorption material layer expands after absorbing some water, because the moisture absorption material layer unit of the moisture absorption material layer is arranged corresponding to the first unit of the chiral nanostructure unit in the chiral nanostructure layer, the height of the first unit changes under the influence of the moisture absorption material layer unit, because the height of the first unit changes, and the heights of the second unit and the third unit do not change, the chiral nanostructure unit generates a height difference and becomes a three-dimensional chiral nanostructure with the height difference, the chiral nanostructure unit generates ohmic dissipation heat loss under the irradiation of light, the heat is transferred to the underlying thermal resistance material layer, and the electrical conductivity of the thermal resistance material layer changes, the gas humidity in the environment to be measured is obtained by detecting the change conditions of the electric signals at the two ends of the first electrode and the second electrode and by the corresponding relation between the change conditions of the electric signals and the gas humidity.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a schematic view of a gas humidity photothermal sensor according to an embodiment of the present invention;
FIG. 2 is a top view of a gas humidity photothermal sensor according to an embodiment of the present invention;
FIG. 3 is a schematic view of another gas humidity photothermal sensor according to an embodiment of the present invention;
fig. 4 is a schematic structural view of another gas humidity photothermal sensor according to an embodiment of the present invention.
Icon: 10-a base layer; 20-a layer of thermal resistance material; 30-an insulating dielectric layer; 40-a layer of hygroscopic material; 50-chiral nanostructured layer; 51-a first unit; 52-a second unit; 53-third unit; 60-a first electrode; 70-a second electrode; 80-graphene layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are one embodiment of the present invention, and not all embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or the orientations or positional relationships that the products of the present invention are conventionally placed in use, and are only used for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal", "vertical" and the like do not imply that the components are required to be absolutely horizontal or pendant, but rather may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In order to make the implementation of the present invention clearer, the following detailed description is made with reference to the accompanying drawings.
FIG. 1 is a schematic view of a gas humidity photothermal sensor according to an embodiment of the present invention; FIG. 2 is a top view of a gas humidity photothermal sensor according to an embodiment of the present invention; as shown in fig. 1 and 2, the present application provides a gas humidity photothermal sensor, the sensor comprising: a base layer 10, a thermal resistance material layer 20, an insulating medium layer 30, a moisture absorbing material layer 40, a chiral nanostructure layer 50, a first electrode 60 and a second electrode 70; the thermal resistance material layer 20 is arranged on one side of the base layer 10, the first electrode 60 and the second electrode 70 are arranged at two ends of the thermal resistance material layer 20 and are electrically connected with the thermal resistance material layer 20, the insulating medium layer 30 is arranged on one side, far away from the base layer 10, of the thermal resistance material layer 20, the moisture absorption material layer 40 comprises a plurality of moisture absorption material layer 40 units, the moisture absorption material layer 40 units are periodically arranged on one side, far away from the base, of the insulating medium layer 30, the chiral nanostructure layer 50 comprises a plurality of chiral nanostructure units which are periodically arranged, the chiral nanostructure units are arranged on one side, far away from the base, of the moisture absorption material layer 40, each chiral nanostructure unit comprises a first unit 51, a second unit 52 and a third unit 53, the first unit 51 and the second unit 52 are both perpendicular to the third unit 53 and are both positioned on the same side of the third unit 53, the first unit 51 of each chiral nanostructure unit and each moisture absorption material layer 40 unit of the moisture absorption material, and the projections of the first unit 51 and the unit of the hygroscopic material layer 40 on the substrate coincide.
The base layer 10, the thermal resistance material layer 20, and the insulating medium layer 30 are all rectangular parallelepipeds, generally, since the first electrode 60 and the second electrode 70 are disposed at two ends of the thermal resistance material layer 20, in practical application, the length and width of the thermal resistance material layer 20 and the insulating medium layer 30 are slightly smaller than those of the base layer, the height of the base layer 10, the thermal resistance material layer 20, and the insulating medium layer 30 is set according to actual requirements, and is not specifically limited herein, the base layer 10 is used for supporting the photo-thermal sensor, the thermal resistance material layer 20 is disposed on the upper layer of the base layer 10, the resistance of the thermal resistance material layer 20 can be changed under the influence of temperature, the insulating medium layer 30 is disposed at the upper end of the thermal resistance material layer 20, the insulating medium layer 30 is used for isolating the path of electron propagation, the first electrode 60 and the second electrode 70 are disposed at two ends of the thermal resistance material layer 20, the bottom of the first electrode 60 and the bottom of the second electrode 70 are disposed on the base layer 10, the moisture absorbing material layer 40 is disposed on the upper end of the insulating medium layer 30, the moisture absorbing material layer 40 includes a plurality of moisture absorbing material layer 40 units, the plurality of moisture absorbing material layer 40 units are periodically disposed, the chiral nanostructure layer 50 is disposed above the moisture absorbing material layer 40 units, the chiral nanostructure layer 50 includes a plurality of chiral nanostructure units, each chiral nanostructure unit includes a first unit 51, a second unit 52 and a third unit 53, the first unit 51, the second unit 52 and the third unit 53 are in the same plane, the plurality of chiral nanostructure units form the plane of the chiral nanostructure layer 50, the chiral nanostructure layer 50 is disposed on the upper portion of the moisture absorbing material layer 40, and the first unit 51 of each chiral nanostructure unit and each moisture absorbing material layer 40 unit of the moisture absorbing material layer 40 are disposed correspondingly, and the projections of the first unit 51 and the absorbent material layer 40 unit on the substrate are overlapped, that is, each absorbent material layer 40 unit of the absorbent material layer 40 is corresponding to the first unit 51 which jacks up one chiral nanostructure unit, because the first unit 51, the second unit 52 and the third unit 53 are a plane, the volume of the absorbent material layer 40 unit of the absorbent material layer 40 is changed under the influence of humidity, and further the height of the first unit 51 is changed, so that the first unit 51, the second unit 52 and the third unit 53 have a plane structure which is changed into a three-dimensional structure, in the environment to be tested, the volume of the absorbent material layer 40 unit of the absorbent material layer 40 is expanded after absorbing some moisture, because the absorbent material layer 40 unit of the absorbent material layer 40 is corresponding to the first unit 51 of the chiral nanostructure unit in the chiral nanostructure layer 50, under the influence of the units of the absorbent material layer 40, the height of the first units 51 changes, since the height of the first unit 51 is changed, while the heights of the second unit 52 and the third unit 53 are not changed, so that the chiral nano-structure unit generates a height difference and becomes a three-dimensional chiral nano-structure with the height difference, the chiral nano-structure unit generates ohmic dissipation under the irradiation of light to form heat loss, the heat is transferred to the underlying thermal resistance material layer 20, the electrical conductivity of the thermal resistance material layer 20 is changed, the gas humidity in the environment to be measured is obtained by detecting the variation of the electrical signals at the two ends of the first electrode 60 and the second electrode 70 and by the corresponding relationship between the variation of the electrical signals and the gas humidity, it should be noted that, the corresponding relationship between the variation of the passing electrical signal and the humidity of the gas is obtained according to experimental measurement, and is not described herein.
Alternatively, the moisture absorbing material layer 40 has moisture absorbing units, and may have other blank places besides the moisture absorbing units, and be filled with insulating material supporting portions, and supporting portions of other structures may be provided, which is not limited herein.
Optionally, the first unit 51, the second unit 52 and the third unit 53 are different in length.
The first unit 51 and the second unit 52 are arranged in parallel and are located on the same side of the third unit 53, generally, the length of the first unit 51 is smaller than that of the second unit 52, the length of the second unit 52 is different from that of the first unit 51 and the third unit 53, and the first unit 51, the second unit 52 and the third unit 53 have different lengths, so that the chiral nanostructure unit is changed into a three-dimensional chiral nanostructure with height difference after generating height difference, ohmic dissipation generated by the chiral nanostructure unit under light irradiation causes larger heat loss, the heat is transferred to the underlying thermal resistance material layer 20, the electrical conductivity of the thermal resistance material layer 20 is changed more, and the sensitivity of the photo-thermal sensor for detecting humidity is improved.
Alternatively, the vertical heights of the first, second and third cells 51, 52 and 53 are the same.
The vertical heights of the first unit 51, the second unit 52 and the third unit 53 are the same, so that the first unit 51, the second unit 52 and the third unit 53 are in the same plane before the heights are not changed, and the chiral change caused by the change is more obvious.
FIG. 3 is a schematic view of another gas humidity photothermal sensor according to an embodiment of the present invention; as shown in fig. 3, alternatively, the absorbent material layer 40 in the absorbent material layer 40 is provided in a group of two, and the two absorbent material layer 40 units correspond to the first unit 51 and the second unit 52 of the chiral nanostructure unit respectively and coincide with the projections of the first unit 51 and the second unit 52 on the substrate respectively.
Two moisture absorption material layer 40 units are respectively arranged at the bottom of the first unit 51 and the second unit 52 of the chiral nanostructure unit, that is, the height of the first unit 51 and the height of the second unit 52 are changed under the condition that the humidity of the two moisture absorption material layer 40 units is changed, the height of the third unit 53 is not changed, so that the chiral nanostructure unit generates a height difference and becomes a three-dimensional chiral nanostructure with the height difference, the chiral nanostructure unit generates ohmic dissipation and heat loss under the irradiation of light, the heat is transmitted to the underlying thermal resistance material layer 20, the electrical conductivity of the thermal resistance material layer 20 is changed, the change condition of the electrical signals at the two ends of the first electrode 60 and the second electrode 70 is detected, and the corresponding relation between the change condition of the electrical signals and the gas humidity is obtained to obtain the gas humidity in the environment to be measured
Optionally, the material of the insulating dielectric layer 30 is silicon oxide or aluminum oxide.
Optionally, the material of the thermal resistance material layer 20 is vanadium oxide or nickel oxide.
Optionally, the material of the base layer 10 is silicon.
Optionally, the thickness of the hygroscopic material layer 40 is 40nm to 60 nm.
The thickness of the moisture absorbing material layer 40 may be 40nm, may also be 60nm, and may also be any size between 40nm and 60nm, which is not limited herein.
Optionally, a two-dimensional material layer is disposed on a side of the chiral nanostructure layer 50 away from the substrate layer 10, and the two-dimensional material is a transparent and highly conductive two-dimensional material, preferably graphene.
Due to the unique energy band structure, excellent mechanical property and photoelectric property, graphene becomes a new platform for developing nano photoelectric devices. However, the thickness of single-layer graphene is on an atomic scale, which is detrimental to the interaction between light and material. For example, when visible light passes through a single layer of graphene once, the absorption of the single layer of graphene is only 2.3%. This greatly limits its application in nano-optoelectronic devices. The plasma coupling between the metal nanostructure and the graphene monolayer can significantly improve the absorption of the linearly polarized light excited nano system. The interaction of the circularly polarized light and the chiral nano system is expected to be further enhanced by the graphene.
FIG. 4 is a schematic view of another gas humidity photothermal sensor according to an embodiment of the present invention; as shown in fig. 4, in the present embodiment, a continuous graphene layer 80 is disposed on the first unit 51 of the chiral nanostructure layer 50, and the graphene layer 80 is not connected to the first electrode 60 and the second electrode 70. The principle of the embodiment is the same as that of the embodiment, and the only difference is that the graphene and the metal structure can form coupling transfer in combination, the coupling of the chiral nano structure is transferred from the coupling between the metal rods to the coupling between the metal rods and the graphene, and due to the unique property of the graphene, the absorption of the structure is enhanced, and the dissipation is increased. The heat is transferred to the underlying thermal resistance material layer, the electrical conductivity of the thermal resistance material layer changes, and the humidity of the air is detected by electrical signals at the two ends of the detection electrode.
The application provides a gas humidity's light and heat sensor, the sensor includes: a base layer 10, a thermal resistance material layer 20, an insulating medium layer 30, a moisture absorbing material layer 40, a chiral nanostructure layer 50, a first electrode 60 and a second electrode 70; the thermal resistance material layer 20 is arranged on one side of the base layer 10, the first electrode 60 and the second electrode 70 are arranged at two ends of the thermal resistance material layer 20 and are electrically connected with the thermal resistance material layer 20, the insulating medium layer 30 is arranged on one side, far away from the base layer 10, of the thermal resistance material layer 20, the moisture absorption material layer 40 comprises a plurality of moisture absorption material layer 40 units, the moisture absorption material layer 40 units are periodically arranged on one side, far away from the base, of the insulating medium layer 30, the chiral nanostructure layer 50 comprises a plurality of chiral nanostructure units which are periodically arranged, the chiral nanostructure units are arranged on one side, far away from the base, of the moisture absorption material layer 40, each chiral nanostructure unit comprises a first unit 51, a second unit 52 and a third unit 53, the first unit 51 and the second unit 52 are both perpendicular to the third unit 53 and are both on the same side of the third unit 53, the first unit 51 of each chiral nanostructure unit corresponds to each moisture absorption material layer 40 unit of the moisture, and the first unit 51 and the moisture absorbing material layer 40 are projected on the substrate to coincide, in the environment to be measured, the volume of the moisture absorbing material layer 40 unit of the moisture absorbing material layer 40 expands after absorbing some moisture, since the moisture absorbing material layer 40 unit of the moisture absorbing material layer 40 is arranged corresponding to the first unit 51 of the chiral nanostructure unit in the chiral nanostructure layer 50, under the influence of the moisture absorbing material layer 40 unit, the height of the first unit 51 changes, and since the height of the first unit 51 changes, and the heights of the second unit 52 and the third unit 53 do not change, the chiral nanostructure unit generates a height difference, becomes a three-dimensional chiral nanostructure with a height difference, the chiral nanostructure unit generates ohmic dissipation heat loss under the irradiation of light, the heat is transferred to the underlying thermal resistance material layer 20, and the electrical conductivity of the thermal resistance material layer 20 changes, the gas humidity in the environment to be measured is obtained by detecting the variation of the electrical signals at the two ends of the first electrode 60 and the second electrode 70 and by the corresponding relationship between the variation of the electrical signals and the gas humidity.
The application provides a gas humidity's light and heat electric sensing system, sensing system includes: a current detection means for generating light and transmitting the generated light to the photo-thermal sensor, a light source having a positive electrode and a negative electrode electrically connected to the first electrode 60 and the second electrode 70 of the photo-thermal sensor, respectively, for detecting current generated by the photo-thermal sensor, and the photo-thermal sensor of any one of the above.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. A gas humidity photothermal sensor, said sensor comprising: the substrate comprises a substrate layer, a thermal resistance material layer, an insulating medium layer, a moisture absorption material layer, a chiral nanostructure layer, a first electrode and a second electrode; the thermal resistance material layer is arranged on one side of the base layer, the first electrode and the second electrode are arranged at two ends of the thermal resistance material layer and are electrically connected with the thermal resistance material layer, the insulating medium layer is arranged on one side, far away from the base layer, of the thermal resistance material layer, the moisture absorption material layer comprises a plurality of moisture absorption material layer units, the moisture absorption material layer units are periodically arranged on one side, far away from the base, of the insulating medium layer, the chiral nanostructure layer comprises a plurality of chiral nanostructure units which are periodically arranged, the chiral nanostructure units are arranged on one side, far away from the base, of the moisture absorption material layer, each chiral nanostructure unit comprises a first unit, a second unit and a third unit, the first unit and the second unit are perpendicular to the third unit and are positioned on the same side of the third unit, the first unit of each chiral nanostructure unit is arranged corresponding to each moisture absorption material layer unit of the moisture absorption material layer, and the projections of the first unit and the moisture absorption material layer unit on the substrate are superposed.
2. Gas humidity photothermal sensor according to claim 1 wherein the first, second and third cells differ in length.
3. Gas humidity photothermal sensor according to claim 2 wherein the vertical height of said first, second and third cells is the same.
4. The gas humidity photothermal sensor according to claim 3 wherein said layer of hygroscopic material comprises a set of two hygroscopic material layer units, wherein said two hygroscopic material layer units correspond to said first unit and said second unit of said chiral nanostructure unit, respectively, and coincide with the projection of said first unit and said second unit on the substrate, respectively.
5. Gas humidity photothermal sensor according to claim 4 wherein the material of said insulating dielectric layer is silicon oxide or aluminum oxide.
6. Gas humidity photothermal sensor according to claim 4 wherein the material of said layer of thermal resistance material is vanadium oxide or nickel oxide.
7. Gas humidity photothermal sensor according to claim 4 wherein said substrate layer is made of silicon.
8. Gas humidity photothermal sensor according to claim 4 wherein said layer of hygroscopic material has a thickness of 40nm to 60 nm.
9. A gas humidity photothermal and electrical sensing system, comprising: a current detection device, a light source and the photothermal sensor according to any one of claims 1 to 8, wherein the light source is configured to generate light and transmit the generated light to the photothermal sensor, and the positive electrode and the negative electrode of the current detection device are electrically connected to the first electrode and the second electrode of the photothermal sensor, respectively, for detecting the current generated by the photothermal sensor.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023239294A1 (en) * | 2022-06-07 | 2023-12-14 | Nanyang Technological University | Photodetector pixel, photodetector and methods of forming the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023239294A1 (en) * | 2022-06-07 | 2023-12-14 | Nanyang Technological University | Photodetector pixel, photodetector and methods of forming the same |
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