CN112834027B - Beam detection device and method of laser annealing equipment - Google Patents

Beam detection device and method of laser annealing equipment Download PDF

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Publication number
CN112834027B
CN112834027B CN202011643342.7A CN202011643342A CN112834027B CN 112834027 B CN112834027 B CN 112834027B CN 202011643342 A CN202011643342 A CN 202011643342A CN 112834027 B CN112834027 B CN 112834027B
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Prior art keywords
spot
light spot
controllable
laser
parameters
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CN112834027A (en
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王瑜
侯煜
岳嵩
王然
张紫辰
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Institute of Microelectronics of CAS
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Institute of Microelectronics of CAS
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/08—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/20—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring contours or curvatures, e.g. determining profile
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G01J1/0403—Mechanical elements; Supports for optical elements; Scanning arrangements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00—Technologies related to metal processing
    • Y02P10/25—Process efficiency

Abstract

The invention provides a light beam detection device of a laser annealing device, comprising: a laser generator for generating a laser beam movable along an annealing path; the laser beam irradiates the light spot morphology detector to form a light spot, so that the light spot morphology detector detects the light spot; the three-dimensional motion platform is arranged below the workpiece table and is connected with the light spot morphology detector; the three-dimensional motion platform can drive the light spot appearance detector to rise to a first plane where the wafer is processed, and drive the light spot appearance detector to synchronously move with the laser beam along the annealing processing path in the first plane. The invention can accurately measure the laser annealing process, thereby accurately obtaining the spot parameters.

Description

Beam detection device and method of laser annealing equipment
Technical Field
The invention relates to the technical field of laser annealing, in particular to a beam detection device and method of laser annealing equipment.
Background
When the laser annealing equipment processes a sample, various parameters of a focused light spot incident on a processing surface of a wafer, such as the size of the light spot, energy distribution and the like, need to be obtained in real time, so that the shaping lens is controlled to adjust the corresponding parameters, the size of the focused light spot can be ensured to be unchanged, and meanwhile, the quality of the light spot is ensured. The conventional spot detection device can only conduct single-point measurement through reflection, has large measurement error, and cannot accurately detect various parameters of laser spots at various points of a wafer in an actual annealing process.
Disclosure of Invention
The beam detection device and the method of the laser annealing equipment can accurately measure the laser annealing processing process, thereby accurately obtaining the spot parameters.
In a first aspect, the present invention provides a beam detection apparatus of a laser annealing device, comprising:
a laser generator for generating a laser beam movable along an annealing path;
the laser beam irradiates the light spot morphology detector to form a light spot, so that the light spot morphology detector detects the light spot;
the three-dimensional motion platform is arranged below the workpiece table and is connected with the light spot morphology detector; the three-dimensional motion platform can drive the light spot appearance detector to rise to a first plane where the wafer is processed, and drive the light spot appearance detector to synchronously move with the laser beam along the annealing processing path in the first plane.
Optionally, the three-dimensional motion platform includes:
the two vertical tracks are fixedly connected with the side wall of the processing cavity of the laser annealing equipment;
the first horizontal rail is connected with the two vertical movement rails in a sliding manner;
the second horizontal rail is in sliding connection with the first horizontal movement rail, and the second horizontal rail is arranged vertically to the first horizontal rail;
and the bearing platform is in sliding connection with the second horizontal track and is used for installing the light spot appearance detector.
Optionally, the system further comprises an upper computer, wherein the upper computer is in communication connection with the light spot appearance detector, and the upper computer is used for controlling the controllable shaping lens to shape the light beam according to the light spot parameters detected by the light spot appearance detector.
Optionally, the controllable shaping optic comprises a controllable microlens array.
Optionally, the system further comprises a wafer thickness measurement module, wherein the wafer thickness measurement module is in communication connection with the three-dimensional motion platform, and the three-dimensional motion platform drives the facula appearance detector to move in the vertical direction according to the wafer thickness measured by the thickness measurement module.
In a second aspect, the present invention also provides a method for detecting a beam of a laser annealing apparatus, using a beam detection device of the laser annealing apparatus as described in any one of the above, comprising:
the light spot appearance detector is controlled to rise to the plane where the wafer is processed;
controlling the galvanometer system to drive and reflect the laser beam so as to enable the laser spot to move along a processing path during annealing processing;
and controlling the light spot appearance detector and the light spot to synchronously move along a processing path during annealing processing, so that the light spot irradiates the light spot appearance detector, and acquiring parameters of the light spot in real time.
Optionally, after acquiring the parameters of the light spot in real time, the method further includes:
transmitting the parameters of the light spots to an upper computer;
the upper computer determines compensation parameters of the controllable shaping lens according to the parameters of the light spots;
and carrying out compensation control on the controllable shaping lens according to the compensation parameters.
Optionally, the controllable shaping optic comprises a controllable microlens array;
the upper computer determines compensation parameters of the controllable shaping lens according to the parameters of the light spots, wherein the compensation parameters comprise: and carrying out compensation control on the corresponding positions of the controllable microlens array according to the compensation parameters.
Optionally, before the control light spot morphology detector ascends to a plane where the wafer is processed, the method comprises:
measuring the thickness of the wafer;
and determining the plane where the wafer is positioned during processing according to the height of the workpiece table and the thickness of the wafer.
Optionally, the parameters of the light spot include: and the position parameter of the light spot corresponds to the light spot size and the light spot quality.
According to the technical scheme provided by the invention, the three-dimensional motion platform is adopted to drive the light spot morphology detector to move, so that the laser light spot irradiates the light spot morphology detector, the laser light spot is directly detected, reflection is not needed, and the accuracy of the measured laser light spot parameters is extremely high. In addition, in the detection process, the moving path of the laser beam and the moving path of the spot morphology detector are identical to the path in the wafer annealing process, so that the laser annealing process can be completely simulated, and the spot parameters can be measured more accurately.
Drawings
FIG. 1 is an isometric view of a beam detection apparatus according to another embodiment of the present invention;
FIG. 2 is a front view of FIG. 1;
FIG. 3 is a left side view of FIG. 1;
FIG. 4 is a top view of FIG. 1;
FIG. 5 is a schematic view of a laser annealing apparatus having a beam detection device according to another embodiment of the present invention;
FIG. 6 is a schematic diagram of an optical shaping device for shaping a laser beam according to an embodiment of the present invention;
FIG. 7 is a partial view of an array of circular controllable microlenses of an optical shaping device according to another embodiment of the invention;
FIG. 8 is a partial perspective view of an array of square controllable microlenses of an optical shaping device according to an embodiment of the invention;
FIG. 9 is a schematic diagram of an optical shaping device employing a Fourier lens to superimpose beams according to another embodiment of the invention;
FIG. 10 is a top view of a controllable microlens array cleaning device according to another embodiment of the present invention;
FIG. 11 is an isometric view of a controllable microlens array cleaning device according to another embodiment of the present invention;
fig. 12 is a process flow diagram of a laser annealing process.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
An embodiment of the present invention provides a beam detection apparatus of a laser annealing device, as shown in fig. 1 to 4, including:
a laser generator 1 for generating a laser beam 8 movable along an annealing path; in some embodiments, the laser beam 8 generated by the laser generator 1 is moved along the annealing path to simulate the annealing process, thereby making the measured parameters closer to the parameters of the actual annealing process.
The light spot appearance detector 16 is arranged on the light path of the laser beam 8, and the laser beam 8 irradiates the light spot appearance detector 16 to form a light spot so that the light spot appearance detector 16 detects the light spot; in some embodiments, the spot profile detector 16 detects the spot by illuminating the laser beam 8 on the spot profile detector 16 and then detecting the spot with the spot profile detector 16. The detection mode does not need to reflect the light spots, so that the parameters of the light spots can be detected more accurately.
A three-dimensional motion platform 14 disposed below the workpiece stage 1301, the three-dimensional motion platform 14 being connected to the spot profile detector 16; the three-dimensional motion platform 14 can drive the light spot morphology detector 16 to rise to a first plane where the wafer is processed, and drive the light spot morphology detector 16 to synchronously move with the laser beam 8 along the annealing processing path in the first plane. In some embodiments, when the spot morphology detector 16 detects the light spot, the laser needs to be irradiated to the spot morphology detector 16 to form the light spot, so the three-dimensional motion platform 14 is adopted to drive the spot morphology detector 16 and the laser beam 8 to move synchronously, and the laser beam 8 can be always ensured to be irradiated to the spot morphology detector 16.
As an alternative embodiment, the three-dimensional motion platform 14 includes:
two vertical tracks 1401 are fixedly connected with the side wall of the processing cavity of the laser annealing equipment; two vertical rails 1401 provide a basis for movement of the spot profile detector 16 in the vertical direction.
A first horizontal rail 1403 slidably connected to the two vertical movement rails;
a second horizontal rail 1404 slidably connected to the first horizontal movement rail, the second horizontal rail 1404 being disposed vertically to the first horizontal rail 1403;
and a carrying platform is slidably connected with the second horizontal track 1404, and the carrying platform is used for installing the light spot morphology detector 16. The first horizontal track 1403 and the second horizontal track 1404 which are vertically arranged enable the spot morphology detector 16 to have two degrees of freedom in the horizontal direction, and the spot morphology detector 16 can move in any track in the horizontal plane through the cooperation of the motion amounts in the two directions. As a preferred embodiment, a load beam 1402 may be disposed between two vertical rails 1401, and the first horizontal rail 1403 is disposed perpendicular to the load beam, so that when the second horizontal rail 1404 slides along the first horizontal rail 1403, the telescopic portion of the second horizontal rail 1404 is not in the same plane as the two vertical rails 1401, so that there is no need to reserve a space between the two vertical rails 1401 for avoiding the telescopic portion, and space occupied by the three-dimensional motion platform 14 is reduced.
As an optional implementation manner, the system further comprises an upper computer, the upper computer is in communication connection with the spot morphology detector 16, and the upper computer is used for controlling the controllable shaping lens to shape the light beam 8 according to the spot parameters detected by the spot morphology detector 16. In some embodiments, the upper computer may be configured to store the spot parameter and the location information corresponding to the spot parameter. The method can also be used for calculating the adjustment mode of the controllable shaping lens according to the light spot parameters. Because the detection process of the spot parameters is to detect the simulated annealing process, the obtained parameters need to be stored and analyzed after the storage in a mode of needing adjustment.
As an alternative embodiment, the controllable shaping lens comprises a controllable microlens array 11. The controllable microlenses 1101 in the controllable microlens array 11 can be individually adjusted, and thus, the spot parameters can be more finely adjusted using the controllable microlens array 11.
As an optional implementation manner, the system further includes a wafer thickness measurement module, the wafer thickness measurement module is in communication connection with the three-dimensional motion platform 14, and the three-dimensional motion platform 14 drives the spot morphology detector 16 to move in a vertical direction according to the wafer thickness measured by the thickness measurement module. In some embodiments, to ensure accuracy of the simulation of the annealing process, the spot morphology detector 16 is disposed on a plane where the wafer is processed, and moves along a spot moving path during the annealing process, so that the annealing process is completely simulated, and the spot parameters can be measured more accurately. The wafer thickness inspection module generally includes a thickness measurement platform 5, a camera 6 and a altimeter 7.
The embodiment of the invention also provides a beam detection method of the laser annealing equipment, which adopts the beam detection device of the laser annealing equipment to detect, and comprises the following steps:
the light spot shape detector 16 is controlled to rise into the plane where the wafer is processed; in some embodiments, the spot profile detector 16 is raised to a plane in which the wafer is processed, so that the plane in which the spot is formed is in the same plane as the wafer processing, facilitating accurate simulation of the wafer processing.
Controlling the galvanometer system 4 to drive the laser beam 8 to reflect so as to enable the laser spot to move along a processing path during annealing processing; in some embodiments, the galvanometer system 4 drives the laser beam 8 to move along the processing path during the annealing process to completely simulate the wafer processing process, so that the spot parameters obtained by subsequent measurement can be more close to the parameters in the wafer processing process.
The spot morphology detector 16 is controlled to move along the processing path during annealing in synchronization with the spot, so that the spot irradiates the spot morphology detector 16, and parameters of the spot are acquired in real time. In some embodiments, the laser profile detector may need to impinge the laser beam 8 on the spot profile detector 16 to form a spot when detecting a laser spot. In order to ensure detection of the spot by the laser profile detector, it is necessary to move the spot profile detector 16 in synchronism with the path of movement of the laser beam 8.
In the technical scheme provided by the embodiment, the three-dimensional motion platform 14 is adopted to drive the spot morphology detector 16 to move, so that the laser spots are irradiated on the spot morphology detector 16, the laser spots are directly detected, reflection is not needed, and the accuracy of the measured laser spot parameters is extremely high. In addition, in the detection process, the moving path of the laser beam 8 and the moving path of the spot morphology detector 16 can be the same as the path in the wafer annealing process, so that the laser annealing process can be completely simulated, and the spot parameters can be measured more accurately.
As an optional implementation manner, after acquiring the parameters of the light spot in real time, the method further includes:
transmitting the parameters of the light spots to an upper computer; in some embodiments, the laser beam 8 is continuously moving as a result of the simulated laser annealing process. Therefore, the parameters of the light spots need to be sent to the upper computer in real time, and the upper computer receives and stores the parameters of the light spots in real time so as to facilitate the subsequent judgment of the parameters of the light spots.
The upper computer determines compensation parameters of the controllable shaping lens according to the parameters of the light spots; in some embodiments, the upper computer determines parameters of the light spot, and calculates compensation parameters of the controllable shaping lens when the parameters of the light spot do not meet the requirements.
And carrying out compensation control on the controllable shaping lens according to the compensation parameters. In some embodiments, the compensation parameter corresponds to the position of the light spot, and during the movement of the laser beam 8, when the laser beam 8 moves to the corresponding position, the controllable shaping lens is compensated, so that the light spot formed by shaping the controllable shaping lens meets the requirement.
As an alternative embodiment, the controllable shaping lens comprises a controllable microlens array 11; in some embodiments, the controllable microlenses 1101 at different positions of the controllable microlens array 11 can be individually adjusted, so that the use of the controllable microlens array 11 as a controllable shaping lens is advantageous for improving the uniformity of the laser beam 8.
The upper computer determines compensation parameters of the controllable shaping lens according to the parameters of the light spots, wherein the compensation parameters comprise: and performing compensation control on the corresponding positions of the whole row of the controllable microlenses 1101 according to the compensation parameters. In some embodiments, when the controllable microlens array 11 is used for shaping the laser beam 8, the controllable microlenses 1101 at different positions correspond to the light spots at different positions, so that the parameters of the light spots can be adjusted more accurately by compensating the controllable microlens array 11 at different positions.
As an alternative embodiment, the control of the spot profile detector 16 prior to rising into the plane in which the wafer is processed includes:
measuring the thickness of the wafer; in some embodiments, the thickness of the wafer is measured and added to the height of the workpiece table 1301, i.e., the position of the plane in which the wafer is located during processing of the wafer.
The plane in which the wafer is processed is determined according to the height of the work table 1301 and the thickness of the wafer. In some embodiments, the height of the workpiece stage 1301 and the thickness of the wafer determine the plane in which the wafer is processed, and the spot profile detector 16 is raised to the plane in which the wafer is processed, which is advantageous for accurately simulating the wafer annealing process and for obtaining accurate spot parameters.
As a preferred embodiment, the parameters of the light spot include: and the position parameter of the light spot corresponds to the light spot size and the light spot quality.
The light beam detection device in the above embodiment is mainly applied to a laser annealing processing device, as shown in fig. 5, where the laser annealing processing device includes an optical shaping device and a controllable microlens 1101 cleaning device in addition to the light beam detection device, and in the laser annealing processing device, a laser beam 8 emitted by a laser generator 1 passes through a pre-shaping lens 2, and an attenuation lens 3 is processed and then enters the optical shaping device, specifically as follows:
the optical shaping device, as shown in fig. 6-8, comprises:
a laser generator 1 for generating a laser beam 8; in some embodiments, the laser generator 1 generates a laser beam 8, and the laser beam 8 is subjected to beam expansion and collimation treatment, and then enters a subsequent controllable microlens array 11 for shaping after the primary shaping treatment.
A controllable microlens array 11 including a plurality of controllable microlenses 1101 arranged in an array manner; in some embodiments, controllable microlens array 11 includes a plurality of controllable microlenses 1101, with the plurality of controllable microlenses 1101 being arranged in an array. For the controllable microlens 1101, the angle and focal length are adjustable, and the adjustment may be performed mechanically or by voltage control. As the laser beam 8 moves along a predetermined path, the laser spot formed by the laser beam 8 on the controllable microlens array 11 sequentially covers a portion of the controllable microlenses 1101 along the predetermined path. As a preferred embodiment, the controllable microlenses 1101 are circular controllable microlenses 1101 or square controllable microlenses 1101.
A driving mechanism for driving the laser beams 8 to sequentially irradiate at least part of the controllable microlenses 1101 along a predetermined path so that the controllable microlenses 1101 shape the laser beams 8; in some implementations, the drive mechanism may typically be a galvanometer mechanism, with the position or direction of the laser beam 8 being changed by angular adjustment or positional adjustment of a mirror in the galvanometer mechanism. In some preferred embodiments, the predetermined path is the same as the path of movement of the laser beam 8 during the wafer annealing process, so that the wafer annealing process can be more accurately simulated, and the adjustment result of the controllable microlens array 11 can be more accurate.
The detection module is used for detecting the light spot formed at the preset position of the shaped laser beam 8 so as to obtain the light spot parameter; in some embodiments, the detection module is a module for detecting the size, morphology and intensity distribution of the laser spot. As the laser beam 8 moves, the controllable micro-lens 1101 for shaping the laser beam 8 also changes continuously, and when the light spot formed by the shaped laser beam 8 does not meet the quality, it can be confirmed that the controllable micro-lens 1101 for shaping the laser beam 8 needs to be adjusted.
The upper computer is in communication connection with the detection module and the controllable micro-lens array 11, and adjusts the controllable micro-lens 1101 at the corresponding position according to the light spot parameters and the position information corresponding to the light spot parameters. The upper computer is used for storing the spot parameters, the corresponding relation between the spot parameters and the positions and adjusting the controllable micro-lens 1101. After receiving the light spot parameter and the position corresponding to the light spot parameter, if the light spot parameter does not meet the requirement, the controllable micro-lens 1101 which does not meet the requirement can be determined through the position corresponding to the light spot parameter, and the part of controllable micro-lens 1101 is adjusted.
In the technical solution of this embodiment, the controllable microlens array 11 is used to shape the laser beam 8 and detect the laser spot after the shape is formed, when the laser spot is detected to be inconsistent with the requirement, a part of the controllable microlenses 1101 in the controllable microlens array 11 can be adjusted, so that the shaping result of the corresponding part of the controllable microlenses 1101 on the spot can be adjusted, the size of the laser spot and the laser intensity distribution can be uniform, and the uniformity of the laser annealing process can be improved.
As an alternative embodiment, as shown in fig. 9, the laser beam 8 is shaped by more than two controllable microlenses 1101 to form more than two laser beams 8 to be superimposed;
the optical shaping device further comprises a fourier lens 1102 disposed on the optical path of the laser beams 8 to be superimposed, wherein the fourier lens 1102 is used for superimposing more than two laser beams 8 to be superimposed into one laser beam 8.
When incident light irradiates more than two controllable microlenses 1101 of the microlens array 11, the incident microlenses 1101 can be regarded as a multiple light source array, the optical effect of the microlens 1101 units forms independent light channels, the light energy in each light channel formed by the light source array is uniform light beam 8, and the energy in the light channel is superimposed on the same area of the uniform beam plane through the Fourier lens 1102, so that the uniformity of the distribution of the light spot energy formed by the superposition is far higher than that of the original incident light spot.
The controllable microlens array 11 cleaning apparatus, as shown in fig. 10-11, includes:
an annular fixing member 19 disposed around the controllable microlens array 11; in some embodiments, the annular fixture 19 is a fixed frame for fixing the controllable microlens array 11, and at the same time, can also be used for fixing the gas ejection module 9 and the gas discharge module 10.
The gas spraying module 9 is connected with the inner side wall of the annular fixing piece 19, and the gas spraying module 9 is arranged above the controllable micro-lens array 11; in some embodiments, the gas spraying module 9 is configured to spray a gas, and the gas is blown across the surface of the controllable microlens array 11, so as to clean dust on the surface of the controllable microlens array 11. In some embodiments, a gas that is not corrosive or oxidizing, such as nitrogen or an inert gas, may be selected.
And a gas discharge module 10 connected with the inner side wall of the annular fixing piece 19, wherein the gas discharge module 10 is arranged above the controllable micro lens array 11, and the gas discharge module 10 is arranged at the opposite side of the gas spraying module 9. In some embodiments, the gas evacuation module 10 is used to evacuate gas while evacuating dust blown up by the gas. Since the gas ejected from the gas ejecting module 9 is ejected by the gas ejecting module 10, the pressure of the space where the controllable microlens array 11 is located can be maintained in a reasonable range, the controllable microlens array 11 is not subjected to abnormal gas pressure, and the safety of the controllable microlens array 11 can be ensured.
In the technical solution provided in this embodiment, the gas spraying module 9 is used to blow out the gas from the controllable microlens array 11, the gas exhausting module 10 is used to exhaust the gas, and when the gas is used to clean the controllable microlens array 11, the air pressure in the space where the controllable microlens 1101 is located is balanced, so that the controllable microlens array 11 is ensured not to bear abnormal air pressure, and damage to the controllable microlens 1101 is avoided.
As an alternative embodiment, the top opening of the ring-shaped fixing member 19 is provided with a top cover glass 17, and the bottom opening of the ring-shaped fixing member 19 is provided with a bottom cover glass 18. In some embodiments, the annular fixture 19, top cover glass 17, and bottom cover glass 18 form a substantially closed cavity within which the controllable microlens array 11, gas ejection module 9, and gas evacuation module 10 are disposed. By adopting the technical scheme of the embodiment, the top protection glass 17 and the bottom protection glass 18 can form a certain protection effect on the controllable microlens array 11, on one hand, the dust amount on the surface of the controllable microlens 1101 can be reduced, and on the other hand, the large-particle dust can be prevented from settling on the surface of the controllable microlens 1101. Therefore, the cleaning of a small amount of small particle dust can be realized by adopting smaller gas flow and lower gas flow rate. The controllable micro lens array 11 is prevented from being subjected to abnormal gas pressure due to excessive gas flow, and the surface of the controllable micro lens array 11 can be prevented from being subjected to larger stress due to excessive gas flow.
As an alternative embodiment, further comprising:
a first flow rate monitoring module, disposed on the annular fixing member 19, for detecting a first flow rate of the gas ejected from the gas ejecting module 9;
and a second flow rate monitoring module, disposed on the annular fixing member 19, for detecting a second flow rate of the gas discharged from the gas discharge module 10.
In this embodiment, the first flow monitoring module and the second flow monitoring module are used to detect the flow of the injected gas and the flow of the discharged gas, so as to avoid the occurrence of a higher positive pressure or a lower negative pressure in the space where the controllable microlens array 11 is located due to the difference between the two.
As an alternative embodiment, further comprising:
the first adjusting module is connected to the gas spraying module 9 and is used for adjusting the first flow of the gas spraying module 9; in some embodiments, the first adjustment module may be a valve disposed on the gas delivery conduit that is capable of adjusting the flow rate of the gas delivery;
a second adjusting module connected to the gas discharging module 10, the second adjusting module being used for adjusting a second flow rate of the gas discharging module 10; in some embodiments, the second adjustment module may be a valve provided on the gas exhaust conduit that is capable of adjusting the gas exhaust flow rate.
The balance module is in communication connection with the first flow monitoring module and the second flow monitoring module, and is used for controlling the first adjusting module to adjust the first flow or controlling the second adjusting module to adjust the second flow according to the difference value between the first flow and the second flow. In some embodiments, the balancing module adjusts the first adjusting module and the second adjusting module according to the difference between the first flow and the second flow, so as to always keep the first flow and the second flow equal, thereby ensuring that the space pressure where the controllable microlens array 11 is located is kept constant.
As an alternative embodiment, further comprising:
and the protection module is in communication connection with the first flow monitoring module and the second flow monitoring module and is used for closing the gas spraying module 9 and the gas discharging module 10 when the difference value between the first flow and the second flow exceeds a preset threshold value. In some embodiments, in order to avoid damage to the controllable microlens array 11 caused by a faulty adjustment of the balancing module, the protection module is provided in this embodiment, and the device is stopped when the difference between the first flow rate and the second flow rate exceeds the predetermined threshold value, so that the device is protected from damage.
As an alternative embodiment, the method further comprises:
the linkage module is in communication connection with the laser generator 1, the gas spraying module 9 and the gas discharging module 10, and is used for closing the gas spraying module 9 and the gas discharging module 10 before the laser generator 1 is turned on and opening the gas spraying module 9 and the gas discharging module 10 after the laser generator 1 is turned off. In some embodiments, it may be desirable to stop the flow of gas during laser processing, as the flow of gas may have an impact on the laser processing. The linkage module is used for being linked with the laser generator 1, the gas spraying module 9 and the gas discharging module 10 are closed before the laser generator 1 is started, and the controllable micro lens array 11 is cleaned by continuously adopting gas after the laser generator 1 is closed.
As an alternative embodiment, further comprising:
the air pressure control module is in communication connection with the laser generator 1, and is used for acquiring the working state of the laser generator 1, controlling the air inlet pressure of the gas spraying module 9 to be 1.6MPa when the laser generator 1 is in a standby state and controlling the air inlet pressure of the gas spraying module 9 to be 0.6MPa when the laser generator 1 is in a standby state or a maintenance state. In some embodiments, a greater gas pressure is required to clean the controllable microlens 1101 when the laser generator 1 is in the ready state, indicating that the apparatus has been stopped for a longer period of time before, and a shorter time before stopping when the laser generator 1 is in the standby state or maintenance state, thus requiring only a lower gas inlet pressure for cleaning.
As an alternative embodiment, the air outlet of the air spraying module 9 is a strip air outlet; the gas inlet of the gas discharge module 10 is a strip-shaped gas inlet. The strip-shaped air inlet and the strip-shaped air outlet can enable the gas to cover a larger area, and the cleaning effect of the controllable micro-lens array 11 is improved.
As an alternative embodiment, the gas outlet of the gas spraying module 9 is arranged at the same level in parallel with the gas inlet of the gas discharging module 10. When the two are arranged at the same height, the gas can be discharged from the space as soon as possible, and meanwhile, the flow direction of the gas can be formed into a stable plane, so that the gas is prevented from forming additional stress on the controllable micro lens array 11.
As an alternative embodiment, the common plane of the gas outlet of the gas ejection module 9 and the gas inlet of the gas discharge module 10 is parallel to the controllable microlens array 11. In some embodiments, the gas flow plane parallel to the controllable microlens array 11 can minimize the gas stress on the controllable microlens array 11, thereby avoiding additional stress on the controllable microlens array 11.
In the above embodiments, the controllable microlens array 11 of the optical shaping device and the cleaning device and the beam detection device are all disposed in the processing chamber 12. The bottom of the process chamber 12 is provided with a window lens 15. Wherein the three-dimensional motion platform 14 of the beam detection device and the spot profile detector 16 are arranged on the processing platform 13 positioned in the processing cavity 12.
In the laser annealing process, as shown in fig. 12, in addition to the above-mentioned beam detection method, a beam detection method is included, specifically including:
scanning the laser beam 8 along a predetermined path over the controllable microlens array 11 such that a portion of the controllable microlenses 1101 of the controllable microlens array 11 shape the laser beam 8; in some embodiments, the predetermined path refers to a movement path when annealing the wafer. As the laser beam 8 moves along the predetermined path, different controllable microlenses 1101 in the controllable microlens array 11 are scanned, i.e. the laser beam 8 is shaped by the different controllable microlenses 1101 when at different positions.
Sequentially detecting a plurality of light spots formed by the shaped laser beam 8 on a preset path to obtain light spot parameters of the light spots; in some embodiments, the plurality of light spots refers to a plurality of light spots formed after shaping by different controllable microlenses 1101. When the position of the laser beam 8 is changed, the laser beam 8 covers different controllable microlenses 1101. Since the laser beam 8 is continuously moving, the light spots at different times and at different positions are shaped by different controllable microlenses 1101. The shaping result of the corresponding controllable microlens 1101 on the laser beam 8 can be judged by the parameters of the light spot.
Judging whether the light spot parameters meet the requirements or not according to the preset target parameters; in some embodiments, the predetermined target parameter refers to a range of spot parameters that enable a uniform annealing process to be performed on the wafer. After the spot parameters of the plurality of spots are obtained, the spot parameters are compared with preset target parameters, when the spot parameters are within the range of the target parameters, the current spot parameters can be determined to meet the requirements, and when the spot parameters are outside the range of the target parameters, the current spot parameters can be determined to not meet the requirements.
And adjusting the controllable micro lens 1101 corresponding to the spot parameters which do not meet the requirements, so that the controllable micro lens 1101 shapes the laser beam 8 and then forms the spots which meet the requirements on a preset path. In some embodiments, since the spot parameters correspond to the controllable microlenses 1101 in the controllable microlens array 11, when the spot parameters are not satisfactory, it can be determined that the shaping of the laser beam 8 by the corresponding controllable microlenses 1101 is not satisfactory, and thus, in this embodiment, the portion of the controllable microlenses 1101 is adjusted. Because only the controllable microlenses 1101 which are not satisfactory are adjusted in the adjustment process, the controllable microlenses 1101 of other parts are not affected, and therefore all light spots on the whole path can be satisfactory.
In the technical solution of this embodiment, the controllable microlens array 11 is used to shape the laser beam 8 and detect the laser spot after the shape is formed, when the laser spot is detected to be inconsistent with the requirement, a part of the controllable microlenses 1101 in the controllable microlens array 11 can be adjusted, so that the shaping result of the corresponding part of the controllable microlenses 1101 on the spot can be adjusted, the size of the laser spot and the laser intensity distribution can be uniform, and the uniformity of the laser annealing process can be improved.
As an alternative embodiment, sequentially irradiating the laser beam 8 on the controllable microlens array 11 along a predetermined path includes: the laser beam 8 is sequentially irradiated to two or more controllable microlenses 1101 along a predetermined path. In some embodiments, when the incident light irradiates more than two microlenses 1101, the incident microlenses 1101 can be regarded as a multiple light source array, and the optical effect of the microlenses 1101 forms independent light channels, so that the light energy in each light channel is a uniform light beam 8, and one laser beam 8 can be divided into a plurality of uniform laser beams 8 to be superimposed.
As an alternative embodiment, sequentially irradiating the laser beam 8 on the controllable microlens array 11 along a predetermined path includes:
dividing the laser beam 8 into more than two laser beams 8 to be superimposed by using the more than two controllable microlenses 1101;
the laser beams 8 to be superimposed are superimposed into one laser beam 8 by a fourier lens 1102.
In some embodiments, fourier lens 1102 superimposes the energy in the optical path on the same area of the beam plane, such that the superimposed spot energy distribution uniformity is much higher than the original incident spot. When the uniformity is not satisfactory, at least some of the two or more controllable microlenses 1101 can be adjusted, thereby adjusting the uniformity of the laser spot.
As an alternative embodiment, sequentially detecting the plurality of spots formed by the shaped laser beam 8 on the predetermined path includes:
the spot morphology detector 16 is arranged on a plane where the wafer is processed;
controlling the spot profile detector 16 to move along a predetermined path so that the shaped laser beam 8 irradiates the spot profile detector 16 to form a spot;
the spot profile detector 16 is used to detect the spot in real time to obtain the spot parameters.
In some embodiments, the spot profile detector 16 detects the spot by illuminating the laser beam 8 on the spot profile detector 16 and then detecting the spot with the spot profile detector 16. The detection mode does not need to reflect the light spots, so that the parameters of the light spots can be detected more accurately. Therefore, in the present embodiment, the spot profile detector 16 is provided on the moving platform, and the moving platform drives the pair of spot profile detectors 16 to move in synchronization with the laser beam 8, so that the laser beam 8 is always irradiated on the spot profile detector 16.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present invention should be included in the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims (10)

1. A beam detection apparatus of a laser annealing device, comprising:
a laser generator for generating a laser beam movable along an annealing path;
the laser beam irradiates the light spot morphology detector to form a light spot, so that the light spot morphology detector detects the light spot;
the three-dimensional motion platform is arranged below the workpiece table and is connected with the light spot morphology detector; the three-dimensional motion platform can drive the light spot appearance detector to rise to a first plane where the wafer is processed, and drive the light spot appearance detector to synchronously move with the laser beam along the annealing processing path in the first plane.
2. The beam detection apparatus of a laser annealing device according to claim 1, wherein the three-dimensional moving stage comprises:
the two vertical tracks are fixedly connected with the side wall of the processing cavity of the laser annealing equipment;
the first horizontal rail is connected with the two vertical rails in a sliding manner;
the second horizontal rail is in sliding connection with the first horizontal rail, and the second horizontal rail is perpendicular to the first horizontal rail;
and the bearing platform is in sliding connection with the second horizontal track and is used for installing the light spot appearance detector.
3. The beam detection device of the laser annealing equipment according to claim 1, further comprising a host computer, wherein the host computer is in communication connection with the spot morphology detector, and the host computer is used for controlling the controllable shaping lens to shape the beam according to the spot parameters detected by the spot morphology detector.
4. A beam detection arrangement for a laser annealing apparatus according to claim 3, wherein the controllable shaping optics comprises a controllable microlens array.
5. The beam inspection apparatus of claim 1, further comprising a wafer thickness measurement module, wherein the wafer thickness measurement module is communicatively connected to the three-dimensional motion platform, and the three-dimensional motion platform drives the spot profile detector to move in a vertical direction according to the wafer thickness measured by the thickness measurement module.
6. A beam detection method of a laser annealing apparatus, characterized in that detection is performed by using the beam detection device of the laser annealing apparatus according to any one of claims 1 to 5, comprising:
the light spot appearance detector is controlled to rise to the plane where the wafer is processed;
controlling the galvanometer system to drive and reflect the laser beam so as to enable the laser spot to move along a processing path during annealing processing;
the spot morphology detector and the light spot are controlled to synchronously move along a processing path during annealing processing, so that the light spot irradiates the spot morphology detector, and parameters of the light spot are obtained in real time;
and controlling the controllable shaping lens to shape the light spot according to the parameters of the light spot.
7. The method for detecting a beam of a laser annealing apparatus according to claim 6, further comprising, after acquiring parameters of the spot in real time:
transmitting the parameters of the light spots to an upper computer;
the upper computer determines compensation parameters of the controllable shaping lens according to the parameters of the light spots;
and carrying out compensation control on the controllable shaping lens according to the compensation parameters.
8. The method of beam detection for a laser annealing apparatus according to claim 7, wherein the controllable shaping optics comprises a controllable microlens array;
the upper computer determines compensation parameters of the controllable shaping lens according to the parameters of the light spots, wherein the compensation parameters comprise: and carrying out compensation control on the corresponding positions of the controllable microlens array according to the compensation parameters.
9. The method for detecting a beam of a laser annealing apparatus according to claim 6, wherein controlling the spot profile detector before being raised into a plane in which the wafer is processed comprises:
measuring the thickness of the wafer;
and determining the plane where the wafer is positioned during processing according to the height of the workpiece table and the thickness of the wafer.
10. The beam detection method of the laser annealing apparatus according to claim 6, wherein the parameters of the spot include: and the position parameter of the light spot corresponds to the light spot size and the light spot quality.
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Publication number Priority date Publication date Assignee Title
JP2000252228A (en) * 1999-03-04 2000-09-14 Toshiba Corp Laser annealing device
CN105364302A (en) * 2014-08-18 2016-03-02 株式会社迪思科 Laser beam spot shape detection method
CN108213748A (en) * 2018-01-17 2018-06-29 山东大学 Laser Beam Quality Factor measuring device and method in laser-water jet Compound Machining
CN108406088A (en) * 2017-02-10 2018-08-17 上海微电子装备（集团）股份有限公司 Laser anneal device and its method for annealing
CN111936260A (en) * 2018-04-09 2020-11-13 施肯拉有限公司 Laser beam positioning system, laser processing apparatus and control method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000252228A (en) * 1999-03-04 2000-09-14 Toshiba Corp Laser annealing device
CN105364302A (en) * 2014-08-18 2016-03-02 株式会社迪思科 Laser beam spot shape detection method
CN108406088A (en) * 2017-02-10 2018-08-17 上海微电子装备（集团）股份有限公司 Laser anneal device and its method for annealing
CN108213748A (en) * 2018-01-17 2018-06-29 山东大学 Laser Beam Quality Factor measuring device and method in laser-water jet Compound Machining
CN111936260A (en) * 2018-04-09 2020-11-13 施肯拉有限公司 Laser beam positioning system, laser processing apparatus and control method

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