CN112825299A - Method for depositing silicon carbide film - Google Patents
Method for depositing silicon carbide film Download PDFInfo
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- CN112825299A CN112825299A CN201911138118.XA CN201911138118A CN112825299A CN 112825299 A CN112825299 A CN 112825299A CN 201911138118 A CN201911138118 A CN 201911138118A CN 112825299 A CN112825299 A CN 112825299A
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- silicon carbide
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- carbide film
- deposition reaction
- depositing
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 95
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 92
- 238000000151 deposition Methods 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 230000008021 deposition Effects 0.000 claims abstract description 59
- 239000002243 precursor Substances 0.000 claims abstract description 46
- 239000002052 molecular layer Substances 0.000 claims abstract description 22
- 239000006227 byproduct Substances 0.000 claims abstract description 9
- 239000011261 inert gas Substances 0.000 claims abstract description 8
- 238000010926 purge Methods 0.000 claims abstract description 8
- 238000001179 sorption measurement Methods 0.000 claims description 7
- 229910018540 Si C Inorganic materials 0.000 claims description 3
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 239000004215 Carbon black (E152) Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229930195733 hydrocarbon Natural products 0.000 abstract 1
- 150000002430 hydrocarbons Chemical class 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 58
- 239000010410 layer Substances 0.000 description 11
- 239000011159 matrix material Substances 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a method for depositing a silicon carbide film, which comprises the steps of putting a substrate into a deposition reaction region, and pretreating the substrate, wherein a beam of ultraviolet rays is adopted to irradiate the surface of the substrate; introducing a first precursor source into the deposition reaction area, and carrying out deposition reaction on the substrate and the first precursor source to form a silicon carbide molecular layer; and introducing inert gas into the deposition reaction area to purge the surface of the substrate to remove the by-products of the deposition reaction and the unreacted first precursor. By irradiating ultraviolet rays on the surface of a substrate and then introducing a silicon-containing hydrocarbon precursor source, the substrate and the precursor source are subjected to deposition reaction to form a silicon carbide molecular layer film, and by-products of the deposition reaction on the surface of the substrate and unreacted first precursor are swept and removed, the technical problem that the silicon carbide film is not easy to deposit on the surface of a patterned semiconductor device is solved, and the technical effect of depositing the high-quality silicon carbide film at a lower temperature is achieved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for depositing a silicon carbide film.
Background
Silicon nitride dielectric layers are generally used as etch stop and chemically inert barrier layers, while electrical signals can quickly pass through the silicon nitride dielectric layers due to their high dielectric constant. The common method for depositing the silicon nitride dielectric layer is chemical vapor deposition, and the temperature of a deposited substrate is above 250 ℃. Compared with silicon nitride, the silicon carbide dielectric layer has better performance for serving as an etching stop layer and a chemical inert barrier layer and has higher dielectric constant. In the semiconductor industry, silicon carbide is commonly used as a device substrate material and few films are deposited on the surface of patterned semiconductor devices, which is caused by two reasons, namely, the silicon carbide is difficult to etch and the silicon carbide film requires higher temperature for deposition. Higher temperatures can promote the diffusion of different elements in the semiconductor device, reducing the electrical performance of the device.
However, the applicant of the present invention finds that the prior art has at least the following technical problems:
since silicon carbide is difficult to etch in the prior art and a silicon carbide film requires a high deposition temperature, the silicon carbide is difficult to deposit on the surface of a patterned semiconductor device.
Disclosure of Invention
The embodiment of the invention provides a method for depositing a silicon carbide film, which is used for solving the technical problems that in the prior art, silicon carbide is difficult to etch, and the silicon carbide film needs higher deposition temperature, so that the silicon carbide is difficult to deposit a film on the surface of a patterned semiconductor device, and achieves the technical effects of depositing a high-quality silicon carbide film at lower temperature, controlling the thickness of the film and being simple to operate.
In order to solve the above problem, an embodiment of the present invention provides a method for depositing a silicon carbide thin film, including: the method comprises the following steps: putting a substrate into a deposition reaction area, and pretreating the substrate, wherein the pretreatment is to irradiate the surface of the substrate with a beam of ultraviolet rays; step two: introducing a first precursor source into the deposition reaction area, and carrying out deposition reaction on the substrate and the first precursor source to form a silicon carbide molecular layer; step three: and introducing inert gas into the deposition reaction area to purge the surface of the substrate to remove the by-products of the deposition reaction and the unreacted first precursor.
Preferably, the step one to the step three are repeatedly cycled, and the silicon carbide film with the target thickness is deposited on the surface of the substrate.
Preferably, the method further comprises: measuring whether the thickness of the silicon carbide film reaches a target thickness; and when the thickness of the silicon carbide film reaches the target thickness, removing the substrate from the deposition reaction area.
Preferably, the substrate is deposited reacted with the first precursor source to form a molecular layer of silicon carbide comprising: and the surface of the substrate is subjected to self-limiting adsorption of the first precursor source to form a layer of monomolecular film by deposition, wherein the monomolecular film is a silicon carbide molecular layer.
Preferably, the thickness of the silicon carbide molecular layer is 0.2-2 nm.
Preferably, the thickness of the silicon carbide thin film is greater than the thickness of the silicon carbide molecular layer.
Preferably, the first precursor source is a silicon-carbon-hydrogen containing precursor source.
Preferably, the molecules of the first precursor source contain a Si-C single bond.
One or more technical solutions in the embodiments of the present invention at least have one or more of the following technical effects:
the embodiment of the invention provides a method for depositing a silicon carbide film, which comprises the following steps: putting a substrate into a deposition reaction area, and pretreating the substrate, wherein the pretreatment is to irradiate the surface of the substrate with a beam of ultraviolet rays; introducing a first precursor source into the deposition reaction area, and carrying out deposition reaction on the substrate and the first precursor source to form a silicon carbide molecular layer; and introducing inert gas into the deposition reaction area to purge the surface of the substrate to remove the by-products of the deposition reaction and the unreacted first precursor. The technical effects that the high-quality silicon carbide film can be deposited at a lower temperature, the film thickness is controllable and the operation is simple are achieved, and the technical problem that the silicon carbide film is difficult to deposit on the surface of a semiconductor device with a pattern formed by the fact that the silicon carbide film is difficult to etch in the prior art and the silicon carbide film needs a higher deposition temperature is solved.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
FIG. 1 is a flow chart of a method for depositing a silicon carbide film in an embodiment of the present disclosure.
Detailed Description
The embodiment of the invention provides a method for depositing a silicon carbide film, which is used for solving the technical problems that in the prior art, silicon carbide is difficult to etch, and the silicon carbide film needs higher deposition temperature, so that the silicon carbide is difficult to deposit a film on the surface of a patterned semiconductor device, and achieves the technical effects of depositing a high-quality silicon carbide film at lower temperature, controlling the thickness of the film and being simple to operate.
According to the technical scheme, the method for depositing the silicon carbide film comprises the steps of putting a substrate into a deposition reaction area, and preprocessing the substrate, wherein the preprocessing is to irradiate the surface of the substrate by adopting a beam of ultraviolet rays; introducing a first precursor source into the deposition reaction area, and carrying out deposition reaction on the substrate and the first precursor source to form a silicon carbide molecular layer; and introducing inert gas into the deposition reaction area to purge the surface of the substrate to remove a byproduct of the deposition reaction and an unreacted first precursor, so that the technical effects of depositing a high-quality silicon carbide film at a lower temperature, controlling the thickness of the film and being simple to operate are achieved.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
An embodiment of the present invention provides a method for depositing a silicon carbide thin film, referring to fig. 1, the method includes steps one to three:
the method comprises the following steps: putting a substrate into a deposition reaction area, and pretreating the substrate, wherein the pretreatment is to irradiate the surface of the substrate with a beam of ultraviolet rays.
Step two: and introducing a first precursor source into the deposition reaction area, and depositing and reacting the substrate and the first precursor source to form a silicon carbide molecular layer.
Further, the substrate is deposited and reacted with the first precursor source to form a molecular layer of silicon carbide, comprising: and the surface of the substrate is subjected to self-limiting adsorption of the first precursor source to form a layer of monomolecular film by deposition, wherein the monomolecular film is a silicon carbide molecular layer. Furthermore, the thickness of the silicon carbide molecular layer is 0.2-2 nm. Further, the first precursor source is a silicon-carbon-hydrogen containing precursor source. Further, the molecules of the first precursor source contain a single Si — C bond.
Specifically, a matrix is placed in a deposition reaction region, a beam of ultraviolet rays is adopted to irradiate the surface of the matrix, the matrix is pretreated, unadsorbed products in the deposition treatment region of the matrix are removed, heating of the matrix is avoided, and silicon carbide film deposition can be carried out at a lower temperature. And introducing a first precursor source containing silicon and carbon hydrogen into the deposition reaction region, wherein the molecules of the first precursor source at least contain Si-C single bonds. And the surface of the substrate is subjected to self-limiting adsorption of the first precursor source to form a layer of monomolecular film by deposition, wherein the monomolecular film is a silicon carbide molecular layer. Self-limiting adsorption is characterized by the input of a precursor source to the surface of the substrate, the precursor source input contacting the substrate being maintained on the substrate surface by chemisorption (saturation adsorption) until the precursor source is consumed and a monolayer of monomolecular film is deposited. The thickness of the silicon carbide molecular layer can be controlled to be 0.2-2 nm, and the silicon carbide film with high quality can be deposited at a low temperature. The silicon carbide film has the characteristics of wide band gap, high thermal conductivity, large electronic saturation drift rate and good chemical stability, and is very suitable for manufacturing electronic devices with high temperature, high frequency, radiation resistance, high power and high density integration. Blue, green and ultraviolet light emitting devices and light detecting devices can also be manufactured, and can be processed into diodes and rectifiers generally.
Step three: and introducing inert gas into the deposition reaction area to purge the surface of the substrate to remove the by-products of the deposition reaction and the unreacted first precursor.
Furthermore, the method of molecular layer deposition adopted in the embodiment of the application for depositing the silicon carbide film can realize that one molecular layer is deposited in each cycle, the thickness of the film can be accurately controlled, the steps one to three are repeatedly cycled, and the silicon carbide film with the target thickness is deposited on one layer on the surface of the substrate. Further, the method further comprises: measuring whether the thickness of the silicon carbide film reaches a target thickness; and when the thickness of the silicon carbide film reaches the target thickness, removing the substrate from the deposition reaction area. Further, the thickness of the silicon carbide film is larger than that of the silicon carbide molecular layer. Since the deposition is a self-limiting adsorption deposition,
specifically, after a silicon carbide molecular layer film is self-limited adsorbed and deposited on the surface of a substrate in the first step and the second step, inert gas is introduced into the deposition reaction region to purge the surface of the substrate to remove a byproduct of the deposition reaction and an unreacted first precursor. Repeating the first step and the third step, depositing a silicon carbide film with the target thickness on the surface of the substrate, and simultaneously measuring whether the thickness of the silicon carbide film reaches the target thickness; and when the thickness of the silicon carbide film reaches the target thickness, removing the substrate from the deposition reaction area. And if the thickness of the silicon carbide film does not reach the target thickness, continuously and repeatedly cycling the first step to the third step until the silicon carbide film deposited on the surface of the substrate reaches the target thickness, so that the thickness of the silicon carbide film can be controlled, and the quality of the silicon carbide film is improved.
The technical scheme provided in the embodiment of the application at least has the following technical effects or advantages:
the embodiment of the invention provides a method for depositing a silicon carbide film, which comprises the following steps: putting a substrate into a deposition reaction area, and pretreating the substrate, wherein the pretreatment is to irradiate the surface of the substrate with a beam of ultraviolet rays; introducing a first precursor source into the deposition reaction area, and carrying out deposition reaction on the substrate and the first precursor source to form a silicon carbide molecular layer; and introducing inert gas into the deposition reaction area to purge the surface of the substrate to remove the by-products of the deposition reaction and the unreacted first precursor. The technical effects that the high-quality silicon carbide film can be deposited at a lower temperature, the film thickness is controllable and the operation is simple are achieved, and the technical problem that the silicon carbide film is difficult to deposit on the surface of a semiconductor device with a pattern formed by the fact that the silicon carbide film is difficult to etch in the prior art and the silicon carbide film needs a higher deposition temperature is solved.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various modifications and variations can be made in the embodiments of the present invention without departing from the spirit or scope of the embodiments of the invention. Thus, if such modifications and variations of the embodiments of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to encompass such modifications and variations.
Claims (8)
1. A method of depositing a silicon carbide film, the method comprising:
the method comprises the following steps: putting a substrate into a deposition reaction area, and pretreating the substrate, wherein the pretreatment is to irradiate the surface of the substrate with a beam of ultraviolet rays;
step two: introducing a first precursor source into the deposition reaction area, and carrying out deposition reaction on the substrate and the first precursor source to form a silicon carbide molecular layer;
step three: and introducing inert gas into the deposition reaction area to purge the surface of the substrate to remove the by-products of the deposition reaction and the unreacted first precursor.
2. The method of depositing a silicon carbide film according to claim 1 wherein the repeating of steps one through three deposits a silicon carbide film of a target thickness on the surface of the substrate.
3. The method of depositing a silicon carbide film of claim 2, further comprising:
measuring whether the thickness of the silicon carbide film reaches a target thickness;
and when the thickness of the silicon carbide film reaches the target thickness, removing the substrate from the deposition reaction area.
4. The method of depositing a silicon carbide film according to claim 1 wherein the substrate is deposited reacted with the first precursor source to form a layer of molecular silicon carbide comprising:
and the surface of the substrate is subjected to self-limiting adsorption of the first precursor source to form a layer of monomolecular film by deposition, wherein the monomolecular film is a silicon carbide molecular layer.
5. The method of depositing a silicon carbide film according to claim 1, wherein the layer of silicon carbide molecules has a thickness of 0.2 nm to 2 nm.
6. The method of depositing a silicon carbide film according to claim 2, wherein the silicon carbide film has a thickness greater than the thickness of the layer of silicon carbide molecules.
7. The method of depositing the silicon carbide film of claim 1 wherein the first precursor source is a silicon-carbon containing precursor source.
8. The method of depositing the silicon carbide film of claim 1, wherein the molecules of the first precursor source contain Si-C single bonds.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911138118.XA CN112825299A (en) | 2019-11-20 | 2019-11-20 | Method for depositing silicon carbide film |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911138118.XA CN112825299A (en) | 2019-11-20 | 2019-11-20 | Method for depositing silicon carbide film |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102304701A (en) * | 2011-09-26 | 2012-01-04 | 中国科学院微电子研究所 | Preparation method of silicon carbide film |
| CN102337523A (en) * | 2011-10-13 | 2012-02-01 | 姜谦 | Selective atomic layer deposition film formation method |
| TW201332016A (en) * | 2012-01-17 | 2013-08-01 | Applied Materials Inc | Molecular layer deposition of silicon carbide |
| CN104392929A (en) * | 2014-11-26 | 2015-03-04 | 上海华力微电子有限公司 | Preparation method of intercalated silicon carbide |
| CN107988586A (en) * | 2017-11-29 | 2018-05-04 | 华南理工大学 | The method that atomic layer deposition prepares zinc oxide nano mitron |
-
2019
- 2019-11-20 CN CN201911138118.XA patent/CN112825299A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102304701A (en) * | 2011-09-26 | 2012-01-04 | 中国科学院微电子研究所 | Preparation method of silicon carbide film |
| CN102337523A (en) * | 2011-10-13 | 2012-02-01 | 姜谦 | Selective atomic layer deposition film formation method |
| TW201332016A (en) * | 2012-01-17 | 2013-08-01 | Applied Materials Inc | Molecular layer deposition of silicon carbide |
| CN104392929A (en) * | 2014-11-26 | 2015-03-04 | 上海华力微电子有限公司 | Preparation method of intercalated silicon carbide |
| CN107988586A (en) * | 2017-11-29 | 2018-05-04 | 华南理工大学 | The method that atomic layer deposition prepares zinc oxide nano mitron |
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