CN112820190B - Manufacturing method of quantum dot substrate - Google Patents

Manufacturing method of quantum dot substrate Download PDF

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CN112820190B
CN112820190B CN201911130128.9A CN201911130128A CN112820190B CN 112820190 B CN112820190 B CN 112820190B CN 201911130128 A CN201911130128 A CN 201911130128A CN 112820190 B CN112820190 B CN 112820190B
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quantum dot
electrode layer
substrate
layer
quantum dots
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CN112820190A (en
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周淼
赵金阳
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TCL Huaxing Photoelectric Technology Co Ltd
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TCL Huaxing Photoelectric Technology Co Ltd
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention provides a manufacturing method of a quantum dot substrate, which comprises the following steps: manufacturing an electrode layer on a substrate; coating the mixed liquid containing the quantum dots on the substrate and covering the electrode layer; electrifying the electrode layer, and gathering the quantum dots in the mixed solution on the electrode layer under the driving of an electric field to form a quantum dot layer; and removing substances except the quantum dots in the mixed solution to obtain the quantum dot substrate. The invention uses the electric field generated after the electrode layer is electrified to drive the quantum dot material to be directionally deposited, thereby realizing the patterning of the quantum dot layer.

Description

Manufacturing method of quantum dot substrate
Technical Field
The invention relates to the field of manufacturing of display technologies, in particular to a quantum dot substrate manufacturing method.
Background
The quantum dot is an ultra-small semiconductor material with direct band gap transition luminescence, and has a quantum size effect. At present, quantum dot light emitting technology has been widely applied to display devices, and is commonly used for manufacturing color filters in display panels, and the quantum dot light emitting technology mainly utilizes the characteristics of quantum dot light emitting, such as spectrum concentration, high color purity, high brightness and good stability, and has significant effects on improving the optical properties of the display devices, increasing the brightness and color gamut, reducing energy consumption and the like.
In a manufacturing process of a common quantum dot substrate, such as a quantum dot color film substrate, a quantum dot light guide plate, a quantum dot light emitting diode substrate, etc., a quantum dot layer needs to be patterned and distributed to meet a requirement of light emitting display. The methods for realizing the patterned distribution of the quantum dot layer in the prior art mainly comprise an ink jet printing technology and a yellow light etching technology, the methods have high requirements on the stability of the quantum dot colloid, the preparation process is relatively complex, and partial quantum dot layer needs to be removed through an etching process, so that the utilization rate of the quantum dot material is low, and the reduction of the production cost is not facilitated.
Disclosure of Invention
Based on the defects of the prior art, the invention provides a method for manufacturing a quantum dot substrate, which is characterized in that an electrode layer is arranged, and an electric field generated after the electrode layer is electrified is utilized to drive quantum dot materials in a quantum dot mixed solution to directionally gather on the electrode layer, so that patterning of the quantum dot layer is realized, and the utilization rate of the quantum dot materials is improved.
The quantum dot substrate manufacturing method provided by the invention comprises the following steps:
manufacturing an electrode layer on a substrate;
coating the mixed liquid containing the quantum dots on the substrate and covering the electrode layer;
electrifying the electrode layer, and gathering the quantum dots in the mixed solution on the electrode layer under the driving of an electric field to form a quantum dot layer;
and removing substances except the quantum dots in the mixed solution to obtain the quantum dot substrate.
According to an embodiment of the present invention, the substrate is a glass substrate, a metal substrate or a polymer substrate, and the electrode layer is made of indium tin oxide.
According to an embodiment of the present invention, the electrode layer includes a first electrode layer and a second electrode layer, and the mixed liquid including quantum dots includes a first mixed liquid including first quantum dots and a second mixed liquid including second quantum dots; the manufacturing method of the quantum dot substrate comprises the following steps:
coating the first mixed solution on the substrate and covering the electrode layer;
the first electrode layer is electrified, and first quantum dots in the first mixed solution are gathered on the first electrode layer under the driving of an electric field to form a first quantum dot layer;
removing substances except the first quantum dots in the first mixed solution;
coating the second mixed solution on the substrate and covering the electrode layer;
the second electrode layer is electrified, and second quantum dots in the second mixed solution are gathered on the second electrode layer under the driving of an electric field to form a second quantum dot layer;
and removing substances except the second quantum dots in the second mixed solution to obtain the quantum dot substrate.
According to an embodiment of the present invention, the first quantum dots are red quantum dots, and the second quantum dots are green quantum dots.
According to an embodiment of the present invention, the red light quantum dots are dispersed in a polar reagent to form the first mixed solution, and the green light quantum dots are dispersed in a non-polar reagent to form the second mixed solution.
According to an embodiment of the present invention, before the electrode layer is formed on the substrate, a step of forming a supporting frame at an edge of the substrate is further included;
the method also comprises the steps of manufacturing an insulating flat layer covering the substrate and the electrode layer after the electrode layer is manufactured on the substrate, and removing the insulating flat layer on the electrode layer through a yellow light etching process to expose the electrode layer.
According to an embodiment of the present invention, after the step of removing substances other than the quantum dots in the mixed solution, the method further includes the steps of:
manufacturing a silicon-oxygen protective layer on one surface of the quantum dot substrate including the quantum dot layer;
manufacturing black matrixes distributed in the quantum dot layer gaps on the silicon-oxygen protective layer;
and cutting off the supporting frame.
According to an embodiment of the present invention, the method for removing substances other than the quantum dots in the mixed solution is evaporation or natural volatilization.
According to an embodiment of the present invention, the electrode layer includes a plurality of square electrodes arranged in an array.
According to an embodiment of the present invention, the quantum dot includes a luminescent core and an inorganic protective shell, the luminescent core is a green light emitting material or a red light emitting material, and the mixed solution includes a low-boiling-point volatile organic reagent or an inorganic reagent.
The invention has the beneficial effects that: according to the manufacturing method of the quantum dot substrate, the electrode layers are arranged on the substrate in an array mode, and the quantum dot materials in the quantum dot mixed liquid are driven to directionally gather on the electrode layers by utilizing the electric field generated after the electrode layers are electrified, so that patterning of the quantum dot layers is achieved, the manufacturing process of the quantum dot substrate is simplified, the utilization rate of the quantum dot materials is improved, and the manufacturing cost is reduced.
Drawings
In order to illustrate the embodiments or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the invention, and it is obvious for a person skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a flow chart of a quantum dot substrate manufacturing method according to a first embodiment of the present invention;
FIG. 2a is a schematic illustration of the formation of an electrode layer on a substrate;
FIG. 2b is a schematic diagram of applying a quantum dot mixture solution on a substrate;
FIG. 2c is a schematic diagram of the quantum dot layer formed after the electrode layer is energized;
FIG. 2d is a schematic diagram of the quantum dot mixture solution after removal;
FIG. 3a is a schematic view of forming a support frame, an electrode layer, and an insulating planarization layer on a substrate;
FIG. 3b is a schematic illustration of the insulating planarization layer after etching;
FIG. 3c is a schematic view of coating the first mixture solution on the insulating planarization layer;
FIG. 3d is a schematic diagram of the first quantum dot layer formed after the first electrode layer is energized;
FIG. 3e is a schematic diagram after removal of the first mixed liquor;
FIG. 3f is a schematic view of applying a second mixture solution on the insulating planarization layer;
FIG. 3g is a schematic diagram of the second quantum dot layer formed after the second electrode layer is powered on;
FIG. 3h is a schematic diagram after removal of the second mixed liquor;
FIG. 3i is a schematic diagram of the formation of a silicon-oxygen protective layer on a quantum dot substrate;
FIG. 3j is a schematic diagram of the formation of a black matrix on a silicon-oxygen protective layer;
FIG. 3k is a schematic diagram of a support bezel with the quantum dot substrate edge cut away;
FIG. 3l is a schematic diagram of a planarization layer formed on top of a quantum dot substrate;
FIG. 4 is a top view of the substrate structure after the first and second electrode layers are formed;
fig. 5 is a top view of the formed quantum dot substrate structure.
Detailed Description
The following description of the various embodiments refers to the accompanying drawings that illustrate specific embodiments in which the invention may be practiced. The directional terms mentioned in the present invention, such as [ upper ], [ lower ], [ front ], [ rear ], [ left ], [ right ], [ inner ], [ outer ], [ side ], are only referring to the directions of the attached drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention. In the drawings, elements having similar structures are denoted by the same reference numerals.
The embodiment of the invention provides a manufacturing method of a quantum dot substrate, which is characterized in that an electrode layer is arranged on the substrate in an array mode, and an electric field generated after the electrode layer is electrified is utilized to drive quantum dot materials in quantum dot mixed liquid to directionally gather on the electrode layer, so that patterning of a quantum dot layer is realized, the manufacturing process of the quantum dot substrate is simplified, the utilization rate of the quantum dot materials is improved, and the manufacturing cost is reduced.
As shown in fig. 1, which is a flowchart of a method for manufacturing a quantum dot substrate according to a first embodiment of the present invention, it should be noted that the quantum dot substrate according to the present invention may be a functional component that realizes light emission or adjusts light emission through a quantum dot matrix, such as a quantum dot color film substrate, a quantum dot light guide plate, a quantum dot light emitting diode substrate, and the like.
Step S11, referring to FIG. 2a, an electrode layer 22 is formed on a substrate 21.
Specifically, the substrate 21 may be a glass substrate, a metal substrate, or a polymer substrate; the electrode layer 22 is made of a transparent conductive material, and optionally, the electrode layer 22 is made of indium tin oxide.
The electrode layer 22 is composed of a plurality of square electrodes arranged in an array. The method for manufacturing the electrode layer 22 may be: firstly, an electrode material film layer is formed on the whole surface of the substrate 21 by a coating or vapor deposition method, and then the electrode material film layer is subjected to patterning treatment to form a plurality of square electrodes distributed in an array, wherein the patterning treatment method can be a yellow light etching process mature in the prior art.
Step s12, referring to fig. 2b, a mixed liquid 23 containing quantum dots is coated on the substrate 21 and covers the electrode layer 22.
Wherein the mixed solution contains the quantum dots and an inorganic agent or an organic agent for dispersing the quantum dots. Optionally, the quantum dots comprise a luminescent core, which may be a green-emitting material, such as ZnCdSe, and an inorganic protective shell2，InP，Cd2SSe, etc., and may also be a red-emitting material, such as CdSe, Cd2SeTe, InAs, etc., and the inorganic protective shell can be CdS, ZnSe, ZnCdS2And one or more of ZnS, ZnO and the like. The inorganic reagent and the organic reagent are colorless and transparent reagents with low boiling points and easy volatilization.
The method of applying the mixed liquid 23 may be slit coating or spin coating, and the thickness of the mixed liquid 23 formed after the application is equal to or greater than the thickness of the electrode layer 22.
Step s13, referring to fig. 2c, the electrode layer 22 is powered on, and the quantum dots in the mixed solution 23 are gathered on the electrode layer 22 under the driving of the electric field, so as to form a quantum dot layer 231.
It should be noted that the quantum dot layer 231 is formed by gathering the quantum dots in the mixed solution 23 on the electrode layer 22 under the action of the electric field, the energization time of the electrode layer 22 can be set according to the content of the quantum dots in the mixed solution 23, and when the energization is finished, almost all the quantum dots in the mixed solution 23 are deposited on the electrode layer 22, so that the waste of quantum dot materials in the conventional etching process is avoided, and the utilization rate of the material is improved.
And S14, referring to the figure 2c and the figure 2d, removing the substances except the quantum dots in the mixed solution 23 to obtain the quantum dot substrate.
The mixed solution 23 includes the quantum dots and a reagent for dispersing the quantum dots, and after the quantum dots are completely deposited on the electrode layer 22, the mixed solution 23 includes only the dispersing reagent, and the dispersing reagent is removed after evaporation at normal temperature or heating, so as to form the quantum dot substrate shown in fig. 2 d.
In summary, the method for manufacturing a quantum dot substrate according to the first embodiment of the present invention utilizes an electric field generated by the electrode layer after being powered on to drive the quantum dot material in the quantum dot mixed liquid to directionally gather on the electrode layer, thereby realizing patterning of the quantum dot layer, improving the utilization rate of the quantum dot material, simplifying the manufacturing process of the quantum dot substrate, and being beneficial to reducing the production cost.
In addition to the first embodiment, a second embodiment of the present invention also provides a method for manufacturing a quantum dot substrate, which is different from the first embodiment in that the quantum dot substrate in the second embodiment includes two quantum dot matrixes with different colors, and the structure of the quantum dot substrate in the second embodiment is more complex. The following describes a method for manufacturing a quantum dot substrate according to a second embodiment of the present invention with reference to the drawings.
A method for manufacturing a quantum dot substrate according to a second embodiment of the present invention includes the following steps:
step s21, as shown in fig. 3a and fig. 3b, providing a substrate 31, and fabricating a supporting frame 33, an electrode layer 32, and an insulating flat layer 34 on the substrate 31.
The support frame 33 is made of an organic material, and is fabricated on the peripheral edge of the substrate 31 for defining the boundary of the quantum dot substrate and limiting the position of each operation in the subsequent process.
Referring to fig. 4, the electrode layer 32 is composed of a plurality of square electrodes arranged in an array. The method for manufacturing the electrode layer 32 may be: firstly, an electrode material film layer is formed on the whole surface of the substrate 31 by a coating or vapor deposition method, and then the electrode material film layer is subjected to patterning treatment to form a plurality of square electrodes distributed in an array, wherein the patterning treatment method can be a yellow light etching process mature in the prior art. The electrode layer 32 is divided into a first electrode layer 321 and a second electrode layer 322, and the first electrode layer 321 and the second electrode layer 322 can be separately energized, so that quantum dot layers are formed on the first electrode layer 321 and the second electrode layer 322, respectively. The electrode layer 32 is made of a transparent conductive material, and optionally, the electrode layer 32 is made of indium tin oxide.
The step of fabricating the insulating planarization layer 34 includes: forming an initial insulating planarization layer 34' covering the electrode layer 32 on the substrate 31 by a coating process; and etching the initial insulating flat layer 34' by adopting a yellow light etching process to remove the insulating material above the electrode layer 32 and expose the electrode layer 32, thereby forming the insulating flat layer 34. The insulating planarization layer 34 is made of a transparent insulating layer material.
Step s22, as shown in fig. 3c, 3d and 3e, a first mixed solution 35 containing first quantum dots is provided, and a first quantum dot layer 351 is formed after the operations of coating the first mixed solution 35, energizing the first electrode layer 321 and removing the first mixed solution 35 are performed.
Specifically, the first quantum dot is a red quantum dot, and the first mixed solution 35 is formed by dispersing the red quantum dot in a polar reagent. The red light quantum dot comprises a luminescent core and an inorganic protective shell, wherein the luminescent core can be CdSe, Cd2SeTe, InAs, the inorganic protective shell can be CdS, ZnSe, ZnCdS2And one or more of ZnS, ZnO and the like. The polar reagent can be an inorganic reagent or an organic reagent, and is a colorless transparent low-boiling point and volatile reagent.
The method of applying the first mixed liquid 35 is: the first mixed liquid 35 is coated on the substrate 31 by a slit coating or spin coating method, and covers the electrode layer 32, and the thickness of the mixed liquid 35 formed after coating is greater than or equal to the thickness of the first electrode layer 321.
After the first electrode layer 321 is powered on, the first quantum dots in the first mixed solution 35 are gathered on the first electrode layer 321 under the driving of an electric field, and the first quantum dot layer 351 is formed. The energization time of the first electrode layer 321 may be set according to the content of the first quantum dots in the first mixed solution 35, and when the energization is finished, almost all the first quantum dots in the first mixed solution 35 are deposited on the first electrode layer 321, so that the utilization rate of the quantum dot material is improved.
The operation of removing the first mixed solution 35 is specifically to remove the substances other than the first quantum dots in the first mixed solution 35. After the first quantum dots in the first mixed solution 35 are completely deposited on the first electrode layer 321, the first mixed solution 35 only contains the dispersing agents, and the dispersing agents are removed after evaporation at normal temperature or heating, so as to form the patterned first quantum dot layer 351 distributed on the first electrode layer 321.
Step s23, as shown in fig. 3f, fig. 3g and fig. 3h, providing a second mixed solution 36 containing second quantum dots, and forming a second quantum dot layer 361 after applying the second mixed solution 36, applying power to the second electrode layer 322, and removing the first mixed solution 36.
Specifically, the second quantum dots are green quantum dots, and the second mixed solution 36 is formed by dispersing the green quantum dots in a non-polar reagent. The green light quantum dot comprises a luminescent core and an inorganic protective shell, wherein the luminescent core can be ZnCdSe2，InP，Cd2One or more of SSe, the inorganic protective shell can be CdS, ZnSe, ZnCdS2And one or more of ZnS, ZnO and the like. The non-polar reagent can be an inorganic reagent or an organic reagent, and is a colorless and transparent low-boiling point and volatile reagent. It should be understood that, according to the principle of similar compatibility, since the first quantum dot layer 351 is formed by aggregation of quantum dots dispersed in a polar agent, the first quantum dots in the first quantum dot layer 351 are not dissolved or dispersed again in the second mixed solution 36 containing a non-polar agent, thereby ensuring the integrity of the first quantum dot layer 351.
The method of applying the second mixed liquid 36 is: the second mixed solution 36 is coated on the substrate 31 by a slit coating or spin coating method, and covers the electrode layer 32, and the thickness of the second mixed solution 36 formed after coating is greater than or equal to the thickness of the second electrode layer 322.
After the second electrode layer 322 is powered on, the second quantum dots in the second mixed solution 36 are gathered on the second electrode layer 322 under the driving of the electric field, and the second quantum dot layer 361 is formed. The energization time of the second electrode layer 322 may be set according to the content of the second quantum dots in the second mixed liquid 36, and when the energization is finished, almost all the second quantum dots in the second mixed liquid 36 are deposited on the second electrode layer 322, so that the utilization rate of the quantum dot material is improved.
The operation of removing the second mixed solution 36 is specifically to remove substances other than the second quantum dots in the second mixed solution 36. It should be noted that, after the second quantum dots in the second mixed solution 36 are completely deposited on the second electrode layer 322, the second mixed solution 36 only contains the dispersing agents, and the dispersing agents are removed after evaporation operation of normal temperature or heating, so as to form the patterned second quantum dot layer 361 distributed on the second electrode layer 322.
Step s24, as shown in fig. 3i and 3j, a silicon-oxygen protection layer 37 and black matrixes 38 distributed in the quantum dot layer gaps are fabricated on one surface of the quantum dot substrate including the quantum dot layer.
Specifically, the silicon-oxygen protection layer 37 is formed by an evaporation method, the silicon-oxygen protection layer 37 is formed to completely cover the first quantum dot layer 351 and the second quantum dot layer 361 and the gap between the first quantum dot layer 351 and the second quantum dot layer 361, and the silicon-oxygen protection layer 37 is colorless and transparent, has the function of sealing and protecting the quantum dot layers and preventing the quantum dot layers from physical or chemical damage.
The black matrix 38 is formed on the silicon-oxygen protective layer 37 and distributed in the gap of the quantum dot matrix formed by the first quantum dot layer 351 and the second quantum dot layer 361. Specifically, in the gap between a part of first quantum dot layer 351 and a part of second quantum dot layer 361, the aperture surrounded by black matrix 38 forms light-transmitting layer 30 (shown in fig. 5), and light-transmitting layer 30 has the same array shape as first quantum dot layer 351 and second quantum dot layer 361. It should be understood that, when the quantum dot substrate is irradiated by blue light, the first quantum dot layer 351 emits red light under excitation of the blue light, the second quantum dot layer 361 emits green light under excitation of the blue light, and the light transmissive layer 30 directly transmits the blue light, so that the quantum dot substrate emits red, green, and blue light.
Step s25, as shown in fig. 3k and fig. 3l, cutting the edge of the quantum dot substrate, and forming a flat layer 39 on the quantum dot substrate on the side including the black matrix 38.
Specifically, the edge of the quantum dot substrate is cut to remove the support frame 33. The planarization layer 39 is formed on the quantum dot substrate by coating or vapor deposition, and the planarization layer 39 completely covers the side of the quantum dot substrate including the black matrix 38. The planarization layer 39 may be made of an organic material, and the planarization layer 39 forms the quantum dot substrate into a flat surface to facilitate the placement of other functional components on the surface.
In summary, in the method for manufacturing a quantum dot substrate according to the second embodiment of the invention, the first electrode layer and the second electrode layer are disposed, and the electric field generated after the first electrode layer is powered on drives the first quantum dots to directionally aggregate on the first electrode layer to form the first quantum dot layer, and the electric field generated after the second electrode layer is powered on drives the second quantum dots to directionally aggregate on the second electrode layer to form the second quantum dot layer, so as to implement patterning of the quantum dot layer.
It should be noted that, although the present invention has been described with reference to specific examples, the above-mentioned examples are not intended to limit the present invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention.

Claims (10)

1. A manufacturing method of a quantum dot substrate is characterized by comprising the following steps:
manufacturing an electrode layer on a substrate, wherein the electrode layer comprises a first electrode layer and a second electrode layer;
coating the mixed liquid containing the quantum dots on the substrate and covering the electrode layer;
the electrode layer is electrified, the quantum dots in the mixed solution are respectively gathered on the first electrode layer to form a first quantum dot layer and gathered on the second electrode layer to form a second quantum dot layer under the driving of an electric field, a light-transmitting layer is formed between part of the first quantum dot layer and part of the second quantum dot layer, and when the electrification is finished, almost all the quantum dots in the mixed solution are deposited on the electrode layer;
and removing substances except the quantum dots in the mixed solution to obtain the quantum dot substrate.
2. The method of manufacturing a quantum dot substrate according to claim 1, wherein the substrate is a glass substrate, a metal substrate or a polymer substrate, and the electrode layer is made of indium tin oxide.
3. The method of claim 1, wherein the mixture containing quantum dots comprises a first mixture containing first quantum dots and a second mixture containing second quantum dots; the manufacturing method of the quantum dot substrate comprises the following steps:
coating the first mixed solution on the substrate and covering the electrode layer;
the first electrode layer is electrified, and first quantum dots in the first mixed solution are gathered on the first electrode layer under the driving of an electric field to form a first quantum dot layer;
removing substances except the first quantum dots in the first mixed solution;
coating the second mixed solution on the substrate and covering the electrode layer;
the second electrode layer is electrified, and second quantum dots in the second mixed solution are gathered on the second electrode layer under the driving of an electric field to form a second quantum dot layer;
and removing substances except the second quantum dots in the second mixed solution to obtain the quantum dot substrate.
4. The method of manufacturing a quantum dot substrate according to claim 3, wherein the first quantum dots are red quantum dots, and the second quantum dots are green quantum dots.
5. The method of claim 4, wherein the red light quantum dots are dispersed in a polar reagent to form the first mixture, and the green light quantum dots are dispersed in a non-polar reagent to form the second mixture.
6. The method of manufacturing a quantum dot substrate according to claim 1, further comprising a step of manufacturing a support frame at an edge of the substrate before manufacturing the electrode layer on the substrate;
the method also comprises the steps of manufacturing an insulating flat layer covering the substrate and the electrode layer after the electrode layer is manufactured on the substrate, and removing the insulating flat layer on the electrode layer through a yellow light etching process to expose the electrode layer.
7. The method of manufacturing a quantum dot substrate according to claim 6, further comprising, after the step of removing the substances other than the quantum dots in the mixed solution, the steps of:
manufacturing a silicon-oxygen protective layer on one surface of the quantum dot substrate including the quantum dot layer;
manufacturing black matrixes distributed in the quantum dot layer gaps on the silicon-oxygen protective layer;
and cutting off the supporting frame.
8. The method of manufacturing a quantum dot substrate according to claim 1, wherein the substance other than the quantum dots in the mixed solution is removed by evaporation or natural evaporation.
9. The method of manufacturing a quantum dot substrate according to claim 1, wherein the electrode layer comprises a plurality of square electrodes arranged in an array.
10. The method of claim 1, wherein the quantum dot comprises a luminescent core and an inorganic protective shell, the luminescent core is a green light emitting material or a red light emitting material, and the mixture comprises a low-boiling-point volatile organic or inorganic reagent.
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