CN112816109B - 射频压力传感器 - Google Patents
射频压力传感器 Download PDFInfo
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- CN112816109B CN112816109B CN202011633610.7A CN202011633610A CN112816109B CN 112816109 B CN112816109 B CN 112816109B CN 202011633610 A CN202011633610 A CN 202011633610A CN 112816109 B CN112816109 B CN 112816109B
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- pressure sensor
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- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 5
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 5
- 238000000059 patterning Methods 0.000 claims description 9
- 230000001788 irregular Effects 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000008859 change Effects 0.000 abstract description 3
- 230000009471 action Effects 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 51
- 239000000463 material Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
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Claims (5)
Priority Applications (1)
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CN202011633610.7A CN112816109B (zh) | 2020-12-31 | 2020-12-31 | 射频压力传感器 |
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CN202011633610.7A CN112816109B (zh) | 2020-12-31 | 2020-12-31 | 射频压力传感器 |
Publications (2)
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CN112816109A CN112816109A (zh) | 2021-05-18 |
CN112816109B true CN112816109B (zh) | 2022-03-15 |
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CN202011633610.7A Active CN112816109B (zh) | 2020-12-31 | 2020-12-31 | 射频压力传感器 |
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CN (1) | CN112816109B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113353883B (zh) * | 2021-08-09 | 2021-11-30 | 南京高华科技股份有限公司 | 一种基于相位检测原理的mems压力传感器及制备方法 |
CN113790833B (zh) * | 2021-09-16 | 2024-06-25 | 武汉敏声新技术有限公司 | 一种压力传感器 |
CN114826191B (zh) * | 2022-05-23 | 2023-11-07 | 武汉敏声新技术有限公司 | 一种薄膜体声波谐振器 |
CN118202263A (zh) * | 2022-06-08 | 2024-06-14 | 深圳市韶音科技有限公司 | 一种传感器 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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US8143681B2 (en) * | 2006-04-20 | 2012-03-27 | The George Washington University | Saw devices, processes for making them, and methods of use |
US8531083B2 (en) * | 2008-02-25 | 2013-09-10 | Resonance Semiconductor Corporation | Devices having a tunable acoustic path length and methods for making same |
US9490770B2 (en) * | 2011-03-29 | 2016-11-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising temperature compensating layer and perimeter distributed bragg reflector |
US9835511B2 (en) * | 2015-05-08 | 2017-12-05 | Rosemount Aerospace Inc. | High temperature flexural mode piezoelectric dynamic pressure sensor |
CN107631827A (zh) * | 2017-09-11 | 2018-01-26 | 重庆大学 | 一种基于硅晶元和压电薄膜的声表面波高温压力传感器芯片及其制备方法 |
CN108917991B (zh) * | 2018-06-28 | 2019-10-25 | 武汉大学 | 高灵敏度压电mems传感器及其制备方法 |
CN209994354U (zh) * | 2019-08-01 | 2020-01-24 | 杭州左蓝微电子技术有限公司 | 薄膜体声波谐振器 |
CN110311643A (zh) * | 2019-08-01 | 2019-10-08 | 杭州左蓝微电子技术有限公司 | 一种薄膜体声波谐振器及其制备方法 |
CN111337166A (zh) * | 2020-03-25 | 2020-06-26 | 电子科技大学 | 一种新型绝对压声表面波压力传感器的制备方法 |
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Effective date of registration: 20220422 Address after: 315832 e2025, zone a, Room 401, building 1, No. 88, Meishan Qixing Road, Beilun District, Ningbo, Zhejiang Province Patentee after: Ningbo Huazhang enterprise management partnership (L.P.) Address before: 430072 Hubei Province, Wuhan city Wuchang District of Wuhan University Luojiashan Patentee before: WUHAN University |
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Effective date of registration: 20220901 Address after: No.01, 4th floor, building D7, phase 3, Wuhan Software New Town, No.9 Huacheng Avenue, Donghu New Technology Development Zone, Wuhan City, Hubei Province, 430000 Patentee after: Wuhan Minsheng New Technology Co.,Ltd. Address before: 315832 e2025, zone a, Room 401, building 1, No. 88, Meishan Qixing Road, Beilun District, Ningbo, Zhejiang Province Patentee before: Ningbo Huazhang enterprise management partnership (L.P.) |
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