CN112802940A - Display substrate, manufacturing method and display device - Google Patents
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- CN112802940A CN112802940A CN202110006457.3A CN202110006457A CN112802940A CN 112802940 A CN112802940 A CN 112802940A CN 202110006457 A CN202110006457 A CN 202110006457A CN 112802940 A CN112802940 A CN 112802940A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8582—Means for heat extraction or cooling characterised by their shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/034—Manufacture or treatment of coatings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0365—Manufacture or treatment of packages of means for heat extraction or cooling
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Abstract
本发明提供一种显示面板、制作方法及显示装置，显示面板包括衬底和设置于所述衬底一侧表面上的若干微发光二极管；第一绝缘层，所述第一绝缘层设置于所述若干微发光二极管远离所述衬底的一侧，所述第一绝缘层包括多个第一贯孔和多个第二贯孔，每一微发光二极管自对应的第一贯孔中露出，任意相邻的微发光二极管之间的隔断自对应的第二贯孔中露出；以及第一反射层，所述第一反射层设置于所述第一绝缘层远离所述衬底的一侧，所述第一反射层包括第一图案和多个第三贯孔，每一第三贯孔和每一第一贯孔相对应，以使每一微发光二极管自对应的第三贯孔中露出；第一图案覆盖于多个第二贯孔中，且所述第一图案覆盖第一绝缘层位于第二贯孔中的侧壁。
The invention provides a display panel, a manufacturing method and a display device. The display panel includes a substrate and a plurality of micro-light emitting diodes arranged on one side surface of the substrate; a first insulating layer, the first insulating layer is arranged on the substrate. one side of the plurality of micro-LEDs away from the substrate, the first insulating layer includes a plurality of first through holes and a plurality of second through holes, each micro-LED is exposed from the corresponding first through hole, The partitions between any adjacent micro-LEDs are exposed from the corresponding second through holes; and a first reflective layer, the first reflective layer is disposed on the side of the first insulating layer away from the substrate, The first reflective layer includes a first pattern and a plurality of third through holes, and each third through hole corresponds to each first through hole, so that each micro-LED is exposed from the corresponding third through hole ; The first pattern covers the plurality of second through holes, and the first pattern covers the sidewalls of the first insulating layer located in the second through holes.
Description
Technical Field
The invention belongs to the technical field of display, and particularly relates to a display substrate, a manufacturing method thereof and a display device.
Background
Light Emitting Diodes (LEDs) based on inorganic semiconductors are widely used in solid-state Light sources or backlight portions of liquid crystal display devices due to their advantages of high Light Emitting efficiency, low cost, long life, and environmental friendliness. In the liquid crystal display device, after the light emitted by the LED is deflected by the liquid crystal, most of the light is absorbed by the color filter, and only a small amount of light exits, so that the light utilization rate is only 2.8%, which means that the required backlight brightness needs to be more than ten times.
In order to improve the Light utilization and reduce the power consumption cost, various novel active display technologies are available, such as Organic Light-Emitting diodes (OLEDs) and Micro Light-Emitting diodes (Micro leds). Compared with the OLED, the MicroLED has the advantages of material stability and more outstanding performances in brightness and service life. However, for the micro LEDs, there are two schemes for realizing full-color, one is to transfer a large number of micro LEDs with three colors of red, green and blue to corresponding positions; the other is to transfer only blue LEDs, and the red and green pixels use quantum dots in conjunction with blue LEDs.
Because the light emitting angle of the micro LED chip is relatively large, the problem of mutual optical crosstalk between sub-pixels exists in the micro LED display panel, and the utilization rate of light is low. In order to overcome the problem of optical crosstalk between adjacent micro LED sub-pixels, a shading element is arranged between the adjacent micro LED sub-pixels of the conventional micro LED display panel. However, light emitted from the micro led to the light shielding element is absorbed by the micro led, so that light loss is high in the photoluminescence process, and the light extraction rate is low.
In view of this, the conventional micro led display device has a problem of low light utilization ratio due to excessive light loss in the photoluminescence process. Therefore, it is desirable to provide a display panel and a method for fabricating the same to improve the defect.
Disclosure of Invention
The invention solves the problem that the light utilization rate is not high due to excessive light loss in the photoluminescence process in the conventional MicroLED display device.
In order to solve the above problems, the present invention provides a display panel, which includes a substrate and a plurality of micro light emitting diodes disposed on a surface of one side of the substrate, and the display panel further includes: the first insulating layer is arranged on one side, far away from the substrate, of the micro light-emitting diodes and comprises a plurality of first through holes and a plurality of second through holes, each micro light-emitting diode is exposed from the corresponding first through hole, and any partition between the adjacent micro light-emitting diodes is exposed from the corresponding second through hole; the first reflecting layer is arranged on one side, far away from the substrate, of the first insulating layer and comprises a first pattern and a plurality of third through holes, and each third through hole corresponds to each first through hole so that each micro light-emitting diode is exposed out of the corresponding third through hole; the first pattern covers the plurality of second through holes, and the first pattern covers the side wall of the first insulating layer in the second through holes.
As an optional technical solution, a surface of the first insulating layer on a side away from the substrate protrudes out of the light emitting surface, and at least a part of the first pattern is lapped on a surface of the first insulating layer on a side away from the substrate; the first insulating layer is a transparent heat conducting layer, and the first reflecting layer is a metal reflecting layer.
As an optional technical solution, the display panel further includes: the second insulating layer is arranged on one side, away from the substrate, of the first reflecting layer and comprises a plurality of first concave parts; the second reflecting layer is arranged on one side, far away from the substrate, of the second insulating layer and comprises a second pattern and a plurality of fourth through holes, and each fourth through hole is opposite to each micro light-emitting diode; the second pattern is located in the plurality of first recesses, and the second pattern covers sidewalls of the second insulating layer located in the first recesses.
As an optional technical solution, at least a part of the surface of the first pattern is exposed from the corresponding first recess; at least one part of the second pattern is laminated on the surface of the side, away from the substrate, of the corresponding first pattern; wherein the first recess does not penetrate through the second insulating layer, and an opening of the first recess is far away from the substrate.
As an optional technical solution, the second insulating layer further includes a plurality of second recesses, and each second recess is located below a corresponding fourth through hole; the display panel further comprises quantum dot layers arranged in the corresponding second concave parts, wherein the second concave parts do not penetrate through the second insulating layer, and the openings of the second concave parts are far away from the substrate.
As an optional technical solution, a surface of one side of the second pattern, which is far away from the substrate, protrudes or is flush with a surface of one side of the second insulating layer, which is far away from the substrate, wherein the second insulating layer is a transparent thermal insulation layer, and the second reflective layer is a metal reflective layer or an organic resin reflective layer.
The invention also provides a manufacturing method of the display panel, which comprises the following steps:
s1, providing a substrate, wherein a plurality of micro light-emitting diodes are arranged on the surface of one side of the substrate;
s2, coating an insulating layer material to one side of the micro light-emitting diodes, which is far away from the substrate, to form a first insulating coating;
s3, patterning the first insulating coating to form a first insulating layer including multiple first through holes and multiple second through holes, wherein each micro light-emitting diode is exposed from the corresponding first through hole, and the partition between any two adjacent micro light-emitting diodes is exposed from the corresponding second through hole;
s4, coating a reflective material on the side, far away from the substrate, of the first insulating layer to form a first reflective coating; and
s5, patterning the first reflective coating to form a first reflective layer including a first pattern and a plurality of third through holes, each third through hole corresponding to each first through hole to expose each micro light emitting diode from the corresponding third through hole, the first pattern covering the plurality of second through holes and covering the side wall of the first insulating layer in the second through holes.
As an optional technical solution, the manufacturing method further includes:
s6, coating an insulating layer material to the side, away from the substrate, of the first reflecting layer to form a second insulating coating;
s7, patterning the second insulating coating to form a second insulating layer comprising a plurality of first concave parts;
s8, coating a reflective material on the side, far away from the substrate, of the second insulating layer to form a second reflective coating;
s9, patterning the second reflective coating to form a second reflective layer including a second pattern and a plurality of fourth through holes, each fourth through hole being opposite to each micro light emitting diode, the second pattern covering the plurality of first recesses, and the second pattern covering the sidewalls of the second insulating layer in the first recesses.
As an optional technical solution, the S7 further includes: patterning the second insulating layer to form a plurality of second concave parts, wherein each second concave part is positioned between each fourth through hole and the third through hole; the surface of the part, close to one side of the substrate, of the second insulating layer corresponding to the second concave part is laminated above each micro light-emitting diode; the manufacturing method further comprises the following steps: and forming a red quantum dot layer and a green quantum dot layer into the corresponding second concave parts.
The invention further provides a display device, which comprises the display panel.
Compared with the prior art, the invention provides the display panel, the manufacturing method and the display device, the heat conduction layer and the first reflection layer are arranged around the micro light-emitting diodes of the display panel in a surrounding manner, so that the loss of light rays emitted by the micro light-emitting diodes on the side wall is reduced, and the light utilization rate is improved; and overcomes the optical crosstalk between the adjacent micro-diodes, improves the display effect of the display panel and prolongs the service life of the display panel
The invention is described in detail below with reference to the drawings and specific examples, but the invention is not limited thereto.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic cross-sectional view of a display panel according to an embodiment of the invention.
Fig. 2 to 10 are schematic cross-sectional views illustrating a manufacturing process of the display panel shown in fig. 1.
Fig. 11 is a flowchart of a method for manufacturing the display panel of fig. 1.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to embodiments and accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
As shown in fig. 1 to 6, an embodiment of the invention provides a display panel 100, which includes a substrate 10, a plurality of micro light emitting diodes 21, 22, 23 disposed on a surface of one side of the substrate 10, a first insulating layer 30 and a first reflective layer 40, wherein the first insulating layer 30 is disposed on a surface of one side of the micro light emitting diodes away from the substrate 10, the first insulating layer 30 includes a plurality of first through holes 31 and a plurality of second through holes 32, each micro light emitting diode is exposed from the corresponding first through hole 31, and at least a portion of a partition 24 between any two adjacent micro light emitting diodes is exposed from the corresponding second through hole 32; the first reflective layer 40 is disposed on a side of the first insulating layer 30 away from the substrate 10, the first reflective layer 40 includes a first pattern 41 and a plurality of third through holes 42, each third through hole 42 is opposite to each first through hole 31, such that each micro light emitting diode is exposed from the corresponding third tube 42; the first pattern 41 covers the plurality of second through holes 32 and covers the sidewall 33 of the first insulating layer 30 facing the second opening 32.
In this embodiment, the first pattern 41 of the first reflective layer 40 projects on the substrate 10 around the projection outside of the corresponding micro led on the substrate 10, that is, the first pattern 41 surrounds the outer side of the corresponding micro led, so that the light emitted by the micro led on the side edge thereof is reflected and converged by the first pattern 41 and exits from the first through hole 31 when the light irradiates the first pattern 41, thereby increasing the effective light extraction efficiency of the micro led. When the red quantum layer 71 is disposed on the micro light emitting diode 21, the light emitted from the side of the micro light emitting diode 10 is reflected by the first pattern 41 of the first reflective layer 40 and guided into the upper red quantum dot layer 71, thereby increasing the light extraction rate.
In a preferred embodiment, a surface of the first insulating layer 30 on a side away from the substrate 10 protrudes from the micro light emitting diode, and at least a portion of the first pattern 41 covers a surface of the first insulating layer 30 on a side away from the substrate 10. The sidewall of the first pattern 41 overlapping the surface of the first insulating layer 30 away from the substrate 10 can prevent the light emitted from the third through hole 42 from being emitted laterally at a large angle (defined as a direction substantially parallel to the surface of the substrate 10 being a lateral direction), thereby further improving the light extraction rate of the micro light-emitting diodes 21, 22, 23 and reducing the crosstalk between any adjacent micro light-emitting diodes 21, 22, 23.
In a preferred embodiment, the first insulating layer 30 is, for example, a transparent heat conducting layer, which transfers heat generated by the micro-leds 21, 22, 23 towards the first reflective layer 40; the first reflective layer 40 is, for example, a metal reflective layer, and the metal reflective layer guides heat away from the micro light emitting diodes 21, 22, and 23, so that the heat dissipation efficiency of the display panel 100 can be improved, and the improvement of the display stability and the service life of the display panel 100 is facilitated.
In a preferred embodiment, in the first insulating layer 30, the first through holes 31 and the second through holes 32 are alternately arranged. The first through hole 31 and the second through hole 32 are through holes penetrating the first insulating layer 30.
In a preferred embodiment, the third through holes 42 of the first reflective layer 40 are spaced apart from each other, and the area between any adjacent third through holes 42 can be regarded as the first pattern 4. In other words, the portion of the first reflective layer 40 where the third through hole 42 is removed is the first pattern 41. The third through hole 42 is a through hole penetrating through the first reflective layer 40.
In a preferred embodiment, the micro light emitting diodes 21, 22, 23 are arranged in an array and form a pixel array, the pixel array includes a plurality of pixel units 20, each pixel unit 20 includes a first sub-pixel 21, a second sub-pixel 22 and a third sub-pixel 23, the first sub-pixel 21 is the micro light emitting diode 21; the second sub-pixel 22 is a micro light emitting diode 22, and the third sub-pixel 23 is a micro light emitting diode 23.
When the micro light emitting diodes 21, 22, 23 are all blue micro light emitting diodes, a red quantum dot layer 71 and a green quantum dot layer 72 are respectively disposed on any two micro light emitting diodes (for example, the micro light emitting diodes 21, 22) of the micro light emitting diodes 21, 22, 23, so that the display panel 100 having the pixel array constituted by the pixel units 20 can perform a color display.
As shown in fig. 1 and 7 to 10, the display panel 100 further includes a second insulating layer 50 and a second reflective layer 60, the second insulating layer 50 is disposed on a side of the first reflective layer 40 away from the substrate 10, the second insulating layer 50 includes a plurality of first recesses 51, each first recess 51 corresponds to each first pattern 41, the second reflective layer 60 includes a plurality of fourth vias 62 and a second pattern 61, the second pattern 61 covers the plurality of first recesses 51, and the second pattern 61 covers a sidewall of the second insulating layer 50 in the first recesses 51.
The second insulating layer 50 further includes a plurality of second recesses 52, the plurality of second recesses 52 are located under the fourth via 62 and opposite to each of the micro light emitting diodes, wherein the second recesses 52 are used for disposing quantum dot layers.
As shown in fig. 1, a portion of the second insulating layer 50 corresponding to one second recess 52 is disposed between the micro light emitting diode 21 and the red quantum dot layer 71, and a portion of the second insulating layer 50 corresponding to the other second recess 52 is disposed between the micro light emitting diode 22 and the green quantum dot layer 71.
In this embodiment, the second pattern 61 covers the sidewall of the second insulating layer 50 in the first recess 51, and is used to avoid the lateral diffusion of the light emitted from the sidewall of the red quantum dot layer 71 or the green quantum dot layer 72 above the micro light emitting diodes 21 and 22, which leads to the problems of low light extraction rate and crosstalk between adjacent pixels.
Preferably, at least a portion of the first pattern 41 of the first reflective layer 40 is exposed from the first recess 51; at least a portion of the second pattern 61 of the second reflective layer 60 contacts and is stacked above the first pattern 41 of the first reflective layer 40, so that the first pattern 41 and the second pattern 61 have no gap in a direction perpendicular to the substrate 10, thereby preventing light from being emitted from the gap between the first pattern 41 and the second pattern 61, which may cause crosstalk.
As shown in fig. 1, the second insulating layer 50, such as a transparent insulating layer, is located above the micro light emitting diodes 21, 22, 23 at a portion corresponding to the second recess 52 to isolate the heat generated by the micro light emitting diodes 21, 22, 23 from being transferred to the second insulating layer 50 above. For example, since the second insulating layer 50 is a transparent thermal insulating layer, it can prevent the heat generated by the micro light emitting diodes 21, 22, 23 from being transferred upwards to the red quantum layer 71 and the green quantum dot layer 72 in the second recess 52, and avoid the abnormality caused by the heat of the quantum dots above the micro light emitting diodes.
In a preferred embodiment, the first concave portion 51 and the second concave portion 52 on the second insulating layer 50 are disposed at an interval, and the first concave portion 51 and the second concave portion 52 are blind holes that do not penetrate through the second insulating layer 50, wherein the openings of the first concave portion 51 and the second concave portion 52 are far away from the substrate 10. That is, the first and second recesses 51 and 52 are formed by thinning the thickness of the upper portion of the film layer corresponding to the first pattern 41, the area of the micro light emitting diodes 21, 22, and 23 on the second insulating coating 500 through a half-tone mask process. Therefore, a portion of the second insulating layer 50 is also interposed between the second pattern 61 and the first pattern 41.
In a preferred embodiment, a region between any adjacent fourth through holes 62 spaced apart from each other on the second reflective layer 60 can be regarded as the second pattern 61. In other words, the portion of the second reflective layer 60 where the fourth via 62 is removed is the second pattern 61.
In this embodiment, the surface of the second pattern 61 on the side away from the substrate 10 is flush with the surface of the third insulating layer 50 on the side away from the substrate 10, and the surface of the third insulating layer 50 on the side away from the substrate 10 refers to the surface of the third insulating layer 30 on the side away from the substrate 10 except for the first concave portion 51 and the second concave portion 51.
In other embodiments of the present invention, a surface of the second pattern on a side away from the substrate may also protrude a surface of the third insulating layer on a side away from the substrate, and further, at least a portion of the second pattern is overlapped on a surface of the third insulating layer on a side away from the substrate, so as to improve the display panel to overcome the problem of optical crosstalk between pixels.
As shown in fig. 11, the present invention further provides a method 200 for manufacturing the display panel 100.
The process of the manufacturing method 200 is described in detail with reference to fig. 2 to 10.
As shown in fig. 11 and 2, S1, a substrate 10 is provided, and a plurality of micro light emitting diodes 21, 22, 23 are disposed on a surface of one side of the substrate 10.
As shown in fig. 11 and 3, S2, an insulating layer material is applied to the side of the micro light emitting diodes 21, 22, 23 away from the substrate 10 to form a first insulating layer 300.
As shown in fig. 11 and 4, the first insulating layer 300 is patterned at S3 to form a first insulating layer 30 including a plurality of first through holes 31 and a plurality of second through holes 32, each of the micro light emitting diodes 21, 22, 23 is exposed from the corresponding first through hole 31, and a portion of the partition 24 between any adjacent micro light emitting diodes 21, 22, 23 is exposed from the corresponding second through hole 32.
In this embodiment, the material of the first insulating layer 30 is selected from transparent heat conductive insulating materials, such as SiO2、Al2O3SiN, SOG or other transparent resins with good thermal conductivity; the patterning process is, for example, an etching process.
As shown in fig. 11 and 5, S4, a reflective material is applied to the side of the first insulating layer 30 away from the substrate 10 to form a first reflective coating 400.
As shown in fig. 11 and 6, S5, patterning the first reflective coating 400, forming a first reflective layer 40 including a first pattern 41 and a plurality of third through holes 42, each third through hole 42 corresponding to each first through hole 31, so that each micro light emitting diode 21, 22, 23 is exposed from the corresponding third through hole 42, the first pattern 41 covers the plurality of second through holes 32, and covers the sidewall 33 of the first insulating layer 30 in the second through hole 42.
In a preferred embodiment, at least a portion of the first pattern 41 is overlapped on a surface of the first insulating layer 30 on a side away from the substrate 10.
In this embodiment, the material of the first reflective layer 40 is selected from metals with better reflectivity, such as metal aluminum and metal silver; the patterning process is, for example, an etching process.
As shown in fig. 11 and 7, S6, an insulating layer material is applied to the side of the first reflective layer 40 away from the substrate 10, and a second insulating coating 500 is formed.
As shown in fig. 11 and 8, the second insulating coating 500 is patterned at S7 to form the second insulating layer 50 including a plurality of first recesses 51 and a plurality of second recesses 52, at least a portion of the first pattern 41 being exposed from the corresponding first recess 51; each second recess 52 is located on the third through hole 42.
In the present embodiment, the material of the second insulating layer 50 is selected from insulating materials; a patterning process such as a photolithography process, a half-tone mask process, a nano-imprinting process, etc.
As shown in fig. 11 and 9, a reflective material is applied to the second insulating layer 50 at S8 on the side away from the substrate 10 to form a second reflective coating 600.
As shown in fig. 11 and 10, S9, patterning the second reflective coating 600, forming a second reflective layer 60 including a plurality of second patterns 61 and a plurality of fourth vias 62, each fourth via 62 being opposite to each micro light emitting diode 21, 22, 23, the second patterns 62 being located in the corresponding first recesses 51.
In a preferred embodiment, at least a portion of the second pattern 61 is stacked above the corresponding first pattern 41.
As shown in fig. 1, the manufacturing method 200 further includes: a red quantum dot layer 71 and a green quantum dot layer 72 are formed into the corresponding second recesses 52.
The invention also provides a display device comprising the display panel 100 as described above, wherein the display panel 100 is manufactured by using the manufacturing method 200, for example.
In summary, the present invention provides a display panel, a manufacturing method thereof and a display device, wherein a heat conducting layer and a first reflective layer are arranged around a micro light emitting diode of the display panel, so that the loss of light emitted by the micro light emitting diode on the side wall is reduced, and the light utilization rate is improved; and the optical crosstalk between adjacent micro-diodes is overcome, the display effect of the display panel is improved, and the service life of the display panel is prolonged.
The present invention has been described in relation to the above embodiments, which are only exemplary of the implementation of the present invention. Furthermore, the technical features mentioned in the different embodiments of the present invention described above may be combined with each other as long as they do not conflict with each other. It is to be noted that the present invention may take various other embodiments, and that various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110006457.3A CN112802940B (en) | 2021-01-05 | 2021-01-05 | A display substrate, manufacturing method and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202110006457.3A CN112802940B (en) | 2021-01-05 | 2021-01-05 | A display substrate, manufacturing method and display device |
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| WO2022261904A1 (en) * | 2021-06-17 | 2022-12-22 | 京东方科技集团股份有限公司 | Display panel and manufacturing method therefor, and display device |
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| CN109075119A (en) * | 2015-01-23 | 2018-12-21 | 维耶尔公司 | Microdevice in system substrate is integrated |
| CN111261665A (en) * | 2018-12-03 | 2020-06-09 | 昆山工研院新型平板显示技术中心有限公司 | Quantum dot light-emitting device, preparation method thereof and display device |
| CN112164705A (en) * | 2020-10-26 | 2021-01-01 | 厦门强力巨彩光电科技有限公司 | Micro-LED display panel and Micro-LED display device |
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| CN109075119A (en) * | 2015-01-23 | 2018-12-21 | 维耶尔公司 | Microdevice in system substrate is integrated |
| CN111261665A (en) * | 2018-12-03 | 2020-06-09 | 昆山工研院新型平板显示技术中心有限公司 | Quantum dot light-emitting device, preparation method thereof and display device |
| CN112164705A (en) * | 2020-10-26 | 2021-01-01 | 厦门强力巨彩光电科技有限公司 | Micro-LED display panel and Micro-LED display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2022261904A1 (en) * | 2021-06-17 | 2022-12-22 | 京东方科技集团股份有限公司 | Display panel and manufacturing method therefor, and display device |
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