CN112797328A

CN112797328A - High-power LED lighting lamp

Info

Publication number: CN112797328A
Application number: CN202110133438.7A
Authority: CN
Inventors: 邹亮; 刘志刚; 刘峰; 肖军云
Original assignee: Suzhou Dongcan Photoelectric Technology Co ltd
Current assignee: Suzhou Dongcan Photoelectric Technology Co ltd
Priority date: 2021-02-01
Filing date: 2021-02-01
Publication date: 2021-05-14

Abstract

The application provides a high-power LED illuminating lamp, which comprises a lampshade 1, an LED lamp panel 2, a radiator 4, a fan 5, a power supply 6, a lamp housing 7 and a lamp cap 8, wherein the lampshade 1 is arranged at the top end, the radiator 4 is arranged below the lampshade 1, the LED lamp panel 2 is arranged between the lampshade 1 and the radiator 4, the lamp housing 7 is arranged below the radiator 4, the lamp cap 8 is arranged at the bottom end, the fan 5 is arranged at the back of the radiator 4, the power supply 6 is arranged in the lamp housing 7, the high-power LED illuminating lamp also comprises a graphene sheet 3, the graphene sheet 3 is arranged between the LED lamp panel 2 and the radiator 4, the graphene sheet 3 conducts heat emitted by the LED lamp panel 2 to the radiator 4, the high thermal conductivity of the graphene sheet 3 improves the heat radiation performance of the LED lamp panel 2, the power supply 6 adopts a photoelectric integrated power supply circuit, the photoelectric integrated power supply circuit increases the number of the LED light, the number of the LED light emitting diodes which are turned on is reduced as the value of the sine-wave voltage is reduced.

Description

High-power LED lighting lamp

Technical Field

The invention relates to an LED lighting device, in particular to a high-power LED lighting lamp.

Background

The high-power LED illuminating lamp is widely applied by virtue of the characteristics of high brightness, energy conservation, environmental protection, long service life and the like. However, because of high power, the LED lamp generates a large amount of heat, and if the heat is not discharged in time, the temperature is too high, which may affect the light efficiency and the service life of the lamp. In addition, the power supply of the high-power LED lighting lamp adopts an electrolytic capacitor, and the service life of the electrolytic capacitor is short, so that the service life of the high-power LED lighting lamp is short.

At present, in order to increase the heat dissipation performance of a high-power LED lamp, the heat dissipation of the high-power LED lighting lamp on the market is mainly realized by installing a radiator on the back surface of an LED lamp panel, conducting heat to the radiator through heat conduction, then conducting heat through heat convection exchange between the radiator and air to dissipate heat, and meanwhile, filling heat dissipation paste between the LED lamp panel and the radiator to increase the heat dissipation performance.

However, the thermal conductivity of the thermal paste is about 2.0, which hinders the thermal conductivity of the high-power LED lamp, and the thermal conductivity is not good. Moreover, the problem of electrolytic capacitance cannot be solved, and the service life of the high-power LED lighting lamp is still not remarkably prolonged.

In view of this, the invention provides a high-power LED lighting fixture, which improves thermal conductivity, increases heat dissipation, does not use an electrolytic capacitor, significantly prolongs service life, and reduces cost.

Disclosure of Invention

The invention aims to provide a high-power LED illuminating lamp, which improves the heat conductivity, increases the heat dissipation performance, does not use an electrolytic capacitor, obviously prolongs the service life and reduces the cost.

The utility model provides a high-power LED illumination lamps and lanterns, on the one hand, this kind of high thermal conductivity material of graphite alkene has been adopted, make graphite alkene solid-state fillable shape, the setting is between LED lamp plate 2 and radiator 4, carry out the heat conduction, graphite alkene piece 3 conducts the heat that LED lamp plate 2 sent to radiator 4, graphite alkene piece 3's heat conductivity reaches 200, compare with traditional heat dissipation cream (the coefficient of heat conductivity of heat dissipation cream is about 2.0), this application replaces traditional heat dissipation cream with graphite alkene piece 3, very big improvement the thermal diffusivity of LED lamp plate 2. On the other hand, the power supply 6 does not use an electrolytic capacitor, but adopts a photoelectric integrated power supply circuit, so that the service life of the power supply 6 is obviously prolonged, and the service life of the high-power LED lighting lamp is obviously prolonged; meanwhile, the photoelectric integrated power supply circuit increases the number of the LED light-emitting diodes which are switched on along with the increase of the voltage value of the sine wave, reduces the number of the LED light-emitting diodes which are switched on along with the decrease of the voltage value of the sine wave, has no influence in the aspect of application because the frequency is high and cannot be observed by human eyes, but reduces the cost.

A high power LED lighting fixture comprising: the LED lamp comprises a lampshade 1, an LED lamp panel 2, a radiator 4, a fan 5, a power supply 6, a lamp shell 7 and a lamp cap 8, wherein the lampshade 1 is arranged at the top end, the radiator 4 is arranged below the lampshade 1, the LED lamp panel 2 is arranged between the lampshade 1 and the radiator 4, the lamp shell 7 is arranged below the radiator 4, the lamp cap 8 is arranged at the bottom end, the fan 5 is arranged at the back of the radiator 4, the power supply 6 is arranged in the lamp shell 7, the high-power LED illuminating lamp also comprises a graphene sheet 3, the graphene sheet 3 is arranged between the LED lamp panel 2 and the radiator 4, the graphene sheet 3 conducts heat emitted by the LED lamp panel 2 to the radiator 4, the high thermal conductivity of the graphene sheet 3 improves the heat dissipation performance of the LED lamp panel 2, the power supply 6 adopts a photoelectric integrated power supply circuit, the photoelectric integrated power supply circuit increases the number of the LED light-emitting diodes which are switched on along with the increase of the voltage value of the sine wave, and reduces the number of the LED light-emitting diodes which are switched on along with the decrease of the voltage value of the sine wave.

In some embodiments, the LED lamp panel 2 includes an aluminum substrate 21 and LED lamp beads 22, the LED lamp beads 22 are disposed on an upper surface of the aluminum substrate 21, and the LED lamp beads 22 are multiple and uniformly distributed on the aluminum substrate 21.

Further, the lampshade 1 covers the LED lamp panel 2, and is in sealed bonding with the radiator 4 through sealant, so that dust is prevented from entering the luminous body, the light source area is increased through the quasi-spherical design, and the optical effect is better.

In some embodiments, the graphene sheet 3 has a plurality of screw holes 31, and the graphene sheet 3 is fixed to the top of the heat sink 4 by screws passing through the screw holes 31, wherein the graphene sheet 3 has a thickness of 0.5 to 1 mm.

Further, the graphene sheet 3 conducts heat generated by the LED lamp panel 2 to the radiator 4, and the thermal conductivity of the graphene sheet 3 is larger than or equal to 200.

In some embodiments, the heat sink 4 is provided with a plurality of fins 41, the fins 41 are spaced apart from each other in a circumferential direction, so that the heat sink 4 is a hollow structure, the fan 5 is installed on the top of the fins 41 of the heat sink 4, and the fan 5 forms an unobstructed heat dissipation channel between the heat sink 4 and the lamp housing 7.

Furthermore, a plurality of vent holes 71 are formed in the lamp housing 7, the power supply 6 is disposed at the lower portion of the lamp housing 7, the vent holes 71 in the lamp housing 7 are air inlets of the fan 5, and the vent holes 71 are uniformly distributed on the outer circumferential surface of the lamp housing 7 and are longitudinally distributed strip-shaped holes.

Furthermore, a barrier-free heat dissipation channel is formed by the gap between the ventilation hole 71 of the lamp housing 7 and the cooling fins 41 of the heat sink 4 and the gap between the blades of the fan 5, so that heat emitted by the LED lamp panel 2 and the power supply 6 can flow through the heat dissipation channel without barrier and be quickly diffused out.

Furthermore, the outer side of the lower part of the lamp housing 7 is provided with threads, and the inner side of the lamp cap 8 is provided with matched threads, so that the lamp housing 7 is connected with the lamp cap 8 through the threads.

In some embodiments, the opto-electronic integrated power circuit of the power supply 6 comprises: the device comprises a filter circuit, a rectifier bridge chip BD1, a voltage reduction circuit, a voltage division circuit, a driving chip U1, N-type MOS tubes, an LED light emitting diode circuit and a sampling circuit, wherein 220V alternating current is connected with the input end of the filter circuit, the output end of the filter circuit is connected with the input end of the rectifier bridge chip BD1, the rectifier bridge chip BD1 rectifies a sine wave from a lower sine wave (negative half cycle) to an upper sine wave (positive half cycle) to form a steamed bun waveform which is totally the upper sine wave, the output end of the rectifier bridge chip BD1 is connected with the voltage reduction circuit, the voltage division circuit and the LED light emitting diode circuit, the output ends of the voltage reduction circuit and the voltage division circuit are connected with the input end of the driving chip U1, the voltage reduction circuit reduces the voltage to 9V to supply power to the driving chip U1, the voltage division circuit detects the input voltage of the driving chip U1, 4 groups of output pins of the driving chip, And is connected with the sampling circuit, when the voltage of the voltage dividing circuit input drive chip U1 is the voltage rising wave band of the sine wave, the 4 groups of N-type MOS tubes are sequentially conducted along with the continuous increase of the voltage, when the voltage of the voltage dividing circuit input drive chip U1 is the voltage falling wave band of the sine wave, the 4 groups of N-type MOS tubes are sequentially disconnected along with the continuous decrease of the voltage, and the drains of the 4 groups of N-type MOS tubes are respectively connected with the 4 LED light-emitting diode circuits.

Furthermore, the filter circuit is composed of an inductor L1, a capacitor C1 and a capacitor C2, the capacitor C1 is connected with the capacitor C2 in parallel and connected with the inductor L1 in series, and the capacitor C2 is connected with a pin 2 and a pin 3 of a rectifier bridge chip BD 1.

Further, the piezoresistor RP1 is connected in parallel with the capacitor C1 to play a role in overvoltage protection.

Further, pin 1 of the rectifier bridge chip BD1 is connected with a resistor R1, a resistor R2 and a capacitor C3, the resistor R1 is connected in parallel with a resistor R2 and then connected in series with a capacitor C3, the resistor R1 is connected in parallel with the resistor R2 to improve power factors, the capacitor C3 is connected to filter, and the output end of the capacitor C3 is connected with a voltage reduction circuit and a voltage division circuit.

Further, the voltage reduction circuit is composed of a resistor R3, a capacitor C6 and a diode D1, wherein the resistor R3 is connected with the capacitor C6 in parallel and is connected with a resistor R3 in series, and the voltage is reduced to 9V and then input to pin 1 of the driving chip U1.

Furthermore, the voltage dividing circuit is composed of a resistor R4, a resistor R5, a capacitor C4 and a capacitor C5, the capacitor C4, the capacitor C5 and the resistor R5 are connected in parallel and are connected with the resistor R4 in series, and the output end of the voltage dividing circuit is connected with the 2 pin of the driving chip U1.

Further, a 14 pin of the driving chip U1 is connected with a grid electrode of an N-type MOS tube Q1, a 13 pin of the driving chip U1 is connected with a grid electrode of an N-type MOS tube Q2, a 12 pin of the driving chip U1 is connected with a grid electrode of an N-type MOS tube Q3, a 11 pin of the driving chip U1 is connected with grid electrodes of an N-type MOS tube Q4 and an N-type MOS tube Q92, an N-type MOS tube Q4 is connected with an N-type MOS tube Q5 in parallel, sources of the N-type MOS tubes Q1, an N-type MOS tube Q2, an N-type MOS tube Q3, an N-type MOS tube Q6384 and an N-type MOS tube Q5 are all grounded, a drain electrode of the N-type MOS tube Q1 is connected with a first LED light emitting diode circuit, a drain electrode of the N-type MOS tube Q2 is connected with a second LED light emitting diode circuit, a drain electrode of the N-type MOS tube Q3 is connected with a third LED light emitting diode circuit, a drain electrode of the N-type MOS tube Q5 and a drain electrode of the N-type MOS tube Q4623 are connected with a fourth LED light emitting diode, with the increasing of the voltage, the N-type MOS transistor Q1, the N-type MOS transistor Q2, the N-type MOS transistor Q3, the N-type MOS transistor Q4, and the N-type MOS transistor Q5 are sequentially turned on, the first LED light emitting diode, the second LED light emitting diode, the third LED light emitting diode, and the fourth LED light emitting diode are sequentially turned on, when the voltage input to the voltage divider circuit and the driving chip U1 is in the voltage drop band of the upper sine wave, the N-type MOS transistor Q4, the N-type MOS transistor Q5, the N-type MOS transistor Q3, the N-type MOS transistor Q2, and the N-type MOS transistor Q1 are sequentially turned off, and the fourth LED light emitting diode, the third LED light emitting diode, the second LED light emitting diode, and the first LED light emitting diode are sequentially turned off.

Further, the frequency of the driving chip U1 sequentially turning on and off the 4 groups of N-type MOS transistors is 50 Hz.

Furthermore, the fourth LED light-emitting diode circuit and the third LED light-emitting diode circuit are respectively formed by connecting 8 LEDs in parallel, and the second LED light-emitting diode circuit and the first LED light-emitting diode circuit are respectively formed by connecting 16 LEDs in series in pairs and then in parallel.

Furthermore,

pins

7 and 8 of the driving chip U1 are connected to a sampling circuit, the sampling circuit is connected to a resistor R10, a resistor R11, a resistor R12, a resistor R13 and a resistor R14, a resistor R10 is connected in parallel to the resistor R14 and then connected in series to the resistor R11, a resistor R11 is connected in series to the resistor R12 and the resistor R13, after the sampling circuit performs voltage sampling, a voltage value is fed back to the driving chip U1, the driving chip U1 controls the on and off of the 4 groups of N-type MOS transistors according to the voltage value obtained by the sampling circuit, and the sampling frequency of the sampling circuit is 50 Hz.

Further,

pins

3, 4, 5, 6, and 10 of the driver chip U1 are grounded.

Drawings

Fig. 1 is a perspective view of a high power LED lighting fixture according to the present application.

Fig. 2 is an exploded view of the high power LED lighting fixture of the present application.

Fig. 3 is a perspective view of a graphene plate according to the present application.

Fig. 4 is a perspective view of the LED lamp panel of the present application.

Fig. 5 is a circuit diagram of the opto-electronic integrated power supply circuit of the present application.

Fig. 6 is a waveform diagram of a steamed bun waveform of the present application.

Description of the main element symbols:

the LED lamp comprises a lampshade 1, an LED lamp panel 2, a graphene sheet 3, a radiator 4, a fan 5, a power supply 6, a lamp housing 7, a lamp holder 8, an aluminum substrate 21, LED lamp beads 22, screw holes 31, radiating fins 41 and ventilation holes 71.

Detailed Description

The following examples are described to aid in the understanding of the present application and are not, and should not be construed to, limit the scope of the present application in any way.

In the following description, those skilled in the art will recognize that components may be described throughout this discussion as separate functional units (which may include sub-units), but those skilled in the art will recognize that various components or portions thereof may be divided into separate components or may be integrated together (including being integrated within a single system or component).

Also, connections between components or systems within the figures are not intended to be limited to direct connections. Rather, data between these components may be modified, reformatted, or otherwise changed by the intermediate components. Additionally, additional or fewer connections may be used. It should also be noted that the terms "coupled," "connected," or "input" and "fixed" are understood to encompass direct connections, indirect connections, or fixed through one or more intermediaries.

In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "side", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on orientations or positional relationships shown in the drawings or orientations or positional relationships commonly recognized in the product of the application, and are only used for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present application.

Example 1:

a high power LED lighting fixture, as shown in fig. 1-6, comprising: the LED lamp comprises a lampshade 1, an LED lamp panel 2, a radiator 4, a fan 5, a power supply 6, a lamp shell 7 and a lamp cap 8, wherein the lampshade 1 is arranged at the top end, the radiator 4 is arranged below the lampshade 1, the LED lamp panel 2 is arranged between the lampshade 1 and the radiator 4, the lamp shell 7 is arranged below the radiator 4, the lamp cap 8 is arranged at the bottom end, the fan 5 is arranged at the back of the radiator 4, the power supply 6 is arranged in the lamp shell 7, the high-power LED illuminating lamp also comprises a graphene sheet 3, the graphene sheet 3 is arranged between the LED lamp panel 2 and the radiator 4, the graphene sheet 3 conducts heat emitted by the LED lamp panel 2 to the radiator 4, the high thermal conductivity of the graphene sheet 3 improves the heat dissipation performance of the LED lamp panel 2, the power supply 6 adopts a photoelectric integrated power supply circuit, the photoelectric integrated power supply circuit increases the number of the LED light-emitting diodes which are switched on along with the increase of the voltage value of the sine wave, and reduces the number of the LED light-emitting diodes which are switched on along with the decrease of the voltage value of the sine wave.

LED lamp plate 2 includes aluminium base board 21 and LED lamp pearl 22, and LED lamp pearl 22 sets up the upper surface at aluminium base board 21, and LED lamp pearl 22 has a plurality ofly, and even distribution is on aluminium base board 21. The lampshade 1 covers the LED lamp panel 2 and is in sealed bonding with the radiator 4 through sealant, so that dust is prevented from entering the luminous body, the light source area is increased through the quasi-spherical design, and the optical effect is better. The graphene sheet 3 has a plurality of screw holes 31, the graphene sheet 3 is fixed to the top of the heat sink 4 by screws passing through the screw holes 31, and the thickness of the graphene sheet 3 is 0.8 mm. The graphene sheet 3 conducts heat generated by the LED lamp panel 2 to the radiator 4, and the thermal conductivity of the graphene sheet 3 is larger than or equal to 200. The heat sink 4 is provided with a plurality of heat dissipation fins 41, the heat dissipation fins 41 are arranged at intervals along the circumferential direction, so that the heat sink 4 is of a hollow structure, the fan 5 is installed at the top of the heat dissipation fins 41 of the heat sink 4, and the fan 5 enables an unobstructed heat dissipation channel to be formed between the heat sink 4 and the lamp housing 7. The lamp housing 7 is provided with a plurality of vent holes 71, the power supply 6 is arranged at the lower part of the lamp housing 7, the vent holes 71 in the lamp housing 7 are air inlets of the fan 5, and the vent holes 71 are uniformly distributed on the outer circumferential surface of the lamp housing 7 and are longitudinally distributed strip-shaped holes. The clearance between the ventilation holes 71 of the lamp housing 7 and the radiating fins 41 of the radiator 4 and the clearance between the blades of the fan 5 form an unobstructed radiating channel, so that heat emitted by the LED lamp panel 2 and the power supply 6 can flow through the radiating channel without obstruction and be diffused out quickly. The lamp is characterized in that threads are arranged on the outer side of the lower portion of the lamp shell 7, and matched threads are arranged on the inner side of the lamp cap 8, so that the lamp shell 7 is connected with the lamp cap 8 through the threads.

The power supply circuit for photoelectric integration of the power supply 6 includes: the device comprises a filter circuit, a rectifier bridge chip BD1, a voltage reduction circuit, a voltage division circuit, a driving chip U1, N-type MOS tubes, an LED light emitting diode circuit and a sampling circuit, wherein 220V alternating current is connected with the input end of the filter circuit, the output end of the filter circuit is connected with the input end of the rectifier bridge chip BD1, the rectifier bridge chip BD1 rectifies a sine wave from a lower sine wave (negative half cycle) to an upper sine wave (positive half cycle) to form a steamed bun waveform which is totally the upper sine wave, the output end of the rectifier bridge chip BD1 is connected with the voltage reduction circuit, the voltage division circuit and the LED light emitting diode circuit, the output ends of the voltage reduction circuit and the voltage division circuit are connected with the input end of the driving chip U1, the voltage reduction circuit reduces the voltage to 9V to supply power to the driving chip U1, the voltage division circuit detects the input voltage of the driving chip U1, 4 groups of output pins of the driving chip, And is connected with the sampling circuit, when the voltage of the voltage dividing circuit input drive chip U1 is the voltage rising wave band of the sine wave, the 4 groups of N-type MOS tubes are sequentially conducted along with the continuous increase of the voltage, when the voltage of the voltage dividing circuit input drive chip U1 is the voltage falling wave band of the sine wave, the 4 groups of N-type MOS tubes are sequentially disconnected along with the continuous decrease of the voltage, and the drains of the 4 groups of N-type MOS tubes are respectively connected with the 4 LED light-emitting diode circuits.

The filter circuit is composed of an inductor L1, a capacitor C1 and a capacitor C2, the capacitor C1 is connected with the capacitor C2 in parallel and is connected with the inductor L1 in series, and the capacitor C2 is connected with a pin 2 and a pin 3 of a rectifier bridge chip BD 1. The piezoresistor RP1 is connected in parallel with the capacitor C1 to play a role of overvoltage protection. A pin 1 of the rectifier bridge chip BD1 is connected with a resistor R1, a resistor R2 and a capacitor C3, the resistor R1 is connected with a resistor R2 in parallel and then connected with a capacitor C3 in series, the resistor R1 and the resistor R2 are connected in parallel to play a role in improving power factors, the capacitor C3 plays a role in filtering, and the output end of the capacitor C3 is connected with a voltage reduction circuit and a voltage division circuit. The voltage reduction circuit consists of a resistor R3, a capacitor C6 and a diode D1, wherein the resistor R3 is connected with the capacitor C6 in parallel and is connected with a resistor R3 in series, and the voltage is reduced to 9V and then input to a pin 1 of the driving chip U1. The voltage division circuit is composed of a resistor R4, a resistor R5, a capacitor C4 and a capacitor C5, the capacitor C4, the capacitor C5 and the resistor R5 are connected in parallel and are connected with the resistor R4 in series, and the output end of the voltage division circuit is connected with a pin 2 of the driving chip U1. A 14 pin of a driving chip U1 is connected with a grid electrode of an N-type MOS tube Q1, a 13 pin of the driving chip U1 is connected with a grid electrode of an N-type MOS tube Q2, a 12 pin of the driving chip U1 is connected with a grid electrode of an N-type MOS tube Q3, an 11 pin of the driving chip U1 is connected with grid electrodes of the N-type MOS tube Q4 and the N-type MOS tube Q5, the N-type MOS tube Q4 is connected with the N-type MOS tube Q5 in parallel, sources of the N-type MOS tube Q1, the N-type MOS tube Q2, the N-type MOS tube Q3, the N-type MOS tube Q4 and the N-type MOS tube Q5 are all grounded, a drain electrode of the N-type MOS tube Q1 is connected with a first LED light emitting diode circuit, a drain electrode of the N-type MOS tube Q2 is connected with a second LED light emitting diode circuit, a drain electrode of the N-type MOS tube Q3 is connected with a third LED light emitting diode circuit, drain electrodes of the N-type MOS tube Q5 and a drain electrode of the N-type MOS tube Q4623 are connected with a fourth LED light, with the increasing of the voltage, the N-type MOS transistor Q1, the N-type MOS transistor Q2, the N-type MOS transistor Q3, the N-type MOS transistor Q4, and the N-type MOS transistor Q5 are sequentially turned on, the first LED light emitting diode, the second LED light emitting diode, the third LED light emitting diode, and the fourth LED light emitting diode are sequentially turned on, when the voltage input to the voltage divider circuit and the driving chip U1 is in the voltage drop band of the upper sine wave, the N-type MOS transistor Q4, the N-type MOS transistor Q5, the N-type MOS transistor Q3, the N-type MOS transistor Q2, and the N-type MOS transistor Q1 are sequentially turned off, and the fourth LED light emitting diode, the third LED light emitting diode, the second LED light emitting diode, and the first LED light emitting diode are sequentially turned off. The frequency of the driving chip U1 for sequentially switching on and off the 4 groups of N-type MOS tubes is 50 Hz. The fourth LED light-emitting diode circuit and the third LED light-emitting diode circuit are respectively formed by connecting 8 LEDs in parallel, and the second LED light-emitting diode circuit and the first LED light-emitting diode circuit are respectively formed by connecting 16 LEDs in series in pairs and then in parallel. The pin 7 and the pin 8 of the driving chip U1 are connected with a sampling circuit, the sampling circuit is connected with a resistor R10, a resistor R11, a resistor R12, a resistor R13 and a resistor R14, a resistor R10 is connected with the resistor R14 in parallel and then connected with the resistor R11 in series, a resistor R11 is connected with the resistor R12 and the resistor R13 in series, after the sampling circuit carries out voltage sampling, the voltage value is fed back to the driving chip U1, the driving chip U1 controls the connection and disconnection of the 4 groups of N-type MOS tubes according to the voltage value obtained by the sampling circuit, and the sampling frequency of the sampling circuit is 50 Hz. The

pins

3, 4, 5, 6 and 10 of the driving chip U1 are grounded.

While various aspects and embodiments have been disclosed herein, it will be apparent to those skilled in the art that other aspects and embodiments can be made without departing from the spirit of the disclosure, and that several modifications and improvements can be made without departing from the spirit of the disclosure. The various aspects and embodiments disclosed herein are presented by way of example only and are not intended to limit the present disclosure, which is to be controlled in the spirit and scope of the appended claims.

Claims

1. A high power LED lighting fixture comprising: the high-power LED illuminating lamp comprises a lampshade (1), an LED lamp panel (2), a radiator (4), a fan (5), a power supply (6), a lamp shell (7) and a lamp cap (8), wherein the lampshade (1) is arranged at the top end, the radiator (4) is arranged below the lampshade (1), the LED lamp panel (2) is arranged between the lampshade (1) and the radiator (4), the lamp shell (7) is arranged below the radiator (4), the lamp cap (8) is arranged at the bottom end, the fan (5) is arranged at the back of the radiator (4), and the power supply (6) is arranged in the lamp shell (7), and is characterized in that the high-power LED illuminating lamp further comprises a graphene sheet (3), the graphene sheet (3) is arranged between the LED lamp panel (2) and the radiator (4), the graphene sheet (3) conducts heat emitted by the LED lamp panel (2) to the radiator (4), and the high thermal conductivity of the graphene sheet (3) improves the heat dissipation, the power supply (6) adopts a photoelectric integrated power supply circuit, the number of the connected LEDs is increased along with the increase of the voltage value of the upper sine wave, and the number of the connected LEDs is reduced along with the decrease of the voltage value of the upper sine wave.

2. The high-power LED lighting fixture as claimed in claim 1, wherein the graphene sheet (3) has a thickness of 0.5-1mm, and the thermal conductivity of the graphene sheet (3) is greater than or equal to 200.

3. The high power LED lighting fixture of claim 1 including one or more features selected from the group consisting of:

(a) the LED lamp panel (2) comprises an aluminum substrate (21) and a plurality of LED lamp beads (22), the LED lamp beads (22) are arranged on the upper surface of the aluminum substrate (21), and the LED lamp beads (22) are uniformly distributed on the aluminum substrate (21);

(b) the lampshade (1) covers the LED lamp panel (2) and is hermetically bonded with the radiator (4) through sealant, so that dust is prevented from entering the luminous body, the light source area is increased due to the spheroidal design, and the optical effect is better;

(c) the heat radiator (4) is provided with a plurality of radiating fins (41), the radiating fins (41) are arranged at intervals along the circumferential direction, so that the heat radiator (4) is of a hollow structure, the fan (5) is arranged at the top of the radiating fins (41) of the heat radiator (4), and the fan (5) enables an obstacle-free radiating channel to be formed between the heat radiator (4) and the lamp shell (7);

(d) the lamp shell (7) is provided with a plurality of vent holes (71), the power supply (6) is arranged at the lower part of the lamp shell (7), the vent holes (71) in the lamp shell (7) are air inlets of the fan (5), and the vent holes (71) are uniformly distributed on the outer circumferential surface of the lamp shell (7) and are strip-shaped holes which are longitudinally distributed;

(e) a barrier-free heat dissipation channel is formed by a gap between the ventilation hole (71) of the lamp shell (7) and the heat dissipation fins (41) of the heat sink (4) and a gap between the blades of the fan (5), so that heat emitted by the LED lamp panel (2) and the power supply (6) can flow through the heat dissipation channel without barrier and can be diffused out quickly.

4. The high power LED lighting fixture as claimed in claim 1, wherein the opto-electronic integrated power circuit of the power supply (6) comprises: the device comprises a filter circuit, a rectifier bridge chip BD1, a voltage reduction circuit, a voltage division circuit, a driving chip U1, N-type MOS tubes, an LED light emitting diode circuit and a sampling circuit, wherein 220V alternating current is connected with the input end of the filter circuit, the output end of the filter circuit is connected with the input end of a rectifier bridge chip BD1, the rectifier bridge chip BD1 rectifies lower sine waves to upper sine waves to form steamed bun waveforms which are all upper sine waves, the output end of the rectifier bridge chip BD1 is connected with the voltage reduction circuit, the voltage division circuit and the LED light emitting diode circuit, the output ends of the voltage reduction circuit and the voltage division circuit are connected with the input end of the driving chip U1, the voltage reduction circuit reduces the voltage to 9V to supply power to the driving chip U1, the voltage division circuit detects the input voltage of the driving chip U1, 4 groups of output pins of the driving chip U1 are respectively connected with the gates of 4 groups of N-type MOS, when the voltage input into the driving chip U1 by the voltage dividing circuit is the voltage rising wave band of the sine wave, the 4 groups of N-type MOS tubes are sequentially connected, and when the voltage input into the driving chip U1 by the voltage dividing circuit is the voltage falling wave band of the sine wave, the 4 groups of N-type MOS tubes are sequentially disconnected along with the continuous reduction of the voltage, and the drains of the 4 groups of N-type MOS tubes are respectively connected with the 4 LED light-emitting diode circuits.

5. The high-power LED lighting lamp as claimed in claim 4, wherein pin 1 of the rectifier bridge chip BD1 is connected to a resistor R1, a resistor R2 and a capacitor C3, the resistor R1 is connected in parallel with a resistor R2 and then connected in series with a capacitor C3, the resistor R1 and the resistor R2 are connected in parallel to improve power factor, the capacitor C3 is connected to filter, and the output terminal of the capacitor C3 is connected to a voltage dropping circuit and a voltage dividing circuit.

6. The high power LED lighting fixture of claim 4 including one or more features selected from the group consisting of:

(a) the filter circuit consists of an inductor L1, a capacitor C1 and a capacitor C2, wherein the capacitor C1 is connected with the capacitor C2 in parallel and is connected with the inductor L1 in series, and the capacitor C2 is connected with a pin 2 and a pin 3 of a rectifier bridge chip BD 1;

(b) the voltage reduction circuit consists of a resistor R3, a capacitor C6 and a diode D1, wherein the resistor R3 is connected with the capacitor C6 in parallel and is connected with a resistor R3 in series, and the voltage is reduced to 9V and is input to a pin 1 of the driving chip U1;

(c) the voltage division circuit is composed of a resistor R4, a resistor R5, a capacitor C4 and a capacitor C5, the capacitor C4, the capacitor C5 and the resistor R5 are connected in parallel and are connected with the resistor R4 in series, and the output end of the voltage division circuit is connected with a pin 2 of the driving chip U1.

7. The high power LED lighting lamp according to claim 4, wherein a pin 14 of the driving chip U1 is connected to a gate of an N-type MOS transistor Q1, a pin 13 of the driving chip U1 is connected to a gate of an N-type MOS transistor Q2, a pin 12 of the driving chip U1 is connected to a gate of an N-type MOS transistor Q3, a pin 11 of the driving chip U1 is connected to gates of an N-type MOS transistor Q4 and an N-type MOS transistor Q5, an N-type MOS transistor Q4 is connected in parallel to an N-type MOS transistor Q5, an N-type MOS transistor Q1, an N-type MOS transistor Q2, an N-type MOS transistor Q3, an N-type MOS transistor Q4 and an N-type MOS transistor Q5 are all grounded, a drain of the N-type MOS transistor Q1 is connected to the first LED light emitting diode circuit, a drain of the N-type MOS transistor Q2 is connected to the second LED light emitting diode circuit, a drain of the N-type MOS transistor Q3 is connected to the third LED voltage dividing circuit, an N-type MOS transistor Q585 and a fourth LED voltage input to the driving diode Q57324, with the increasing of the voltage, the N-type MOS transistor Q1, the N-type MOS transistor Q2, the N-type MOS transistor Q3, the N-type MOS transistor Q4, and the N-type MOS transistor Q5 are sequentially turned on, the first LED light emitting diode, the second LED light emitting diode, the third LED light emitting diode, and the fourth LED light emitting diode are sequentially turned on, when the voltage input to the voltage divider circuit and the driving chip U1 is in the voltage drop band of the upper sine wave, the N-type MOS transistor Q4, the N-type MOS transistor Q5, the N-type MOS transistor Q3, the N-type MOS transistor Q2, and the N-type MOS transistor Q1 are sequentially turned off, and the fourth LED light emitting diode, the third LED light emitting diode, the second LED light emitting diode, and the first LED light emitting diode are sequentially turned off.

8. The high-power LED lighting lamp as claimed in claim 7, wherein the frequency of sequentially turning on and off 4 groups of N-type MOS transistors by the driving chip U1 is 50 Hz.

9. The high power LED lighting fixture of claim 8 wherein the fourth LED circuit and the third LED circuit are each comprised of 8 LEDs connected in parallel, and the second LED circuit and the first LED circuit are each comprised of 16 LEDs connected in series and then in parallel.

10. The high-power LED lighting lamp as claimed in claim 7, wherein the pins 7 and 8 of the driving chip U1 are connected to a sampling circuit, the sampling circuit is connected to a resistor R10, a resistor R11, a resistor R12, a resistor R13 and a resistor R14, a resistor R10 is connected to the resistor R14 in parallel and then connected to a resistor R11 in series, a resistor R11 is connected to the resistor R12 and the resistor R13 in series, after the sampling circuit performs voltage sampling, the voltage value is fed back to the driving chip U1, the driving chip U1 controls the conduction and disconnection of the 4 groups of N-type MOS transistors according to the voltage value obtained by the sampling circuit, and the sampling frequency of the sampling circuit is 50 Hz.