CN112770472A - Plasma generator boosting device and plasma generator - Google Patents
Plasma generator boosting device and plasma generator Download PDFInfo
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- CN112770472A CN112770472A CN202011633803.2A CN202011633803A CN112770472A CN 112770472 A CN112770472 A CN 112770472A CN 202011633803 A CN202011633803 A CN 202011633803A CN 112770472 A CN112770472 A CN 112770472A
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- 239000000498 cooling water Substances 0.000 description 1
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- 230000018109 developmental process Effects 0.000 description 1
- 239000002920 hazardous waste Substances 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/48—Generating plasma using an arc
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
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- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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Abstract
The present disclosure relates to a plasma generator boost device and plasma generator, wherein, the boost device includes: at least two voltage segment components coaxially arranged, the voltage segment components comprising: a housing support frame having a cavity; the auxiliary anode is coaxially arranged in the cavity and is provided with an electric arc channel along the axial direction; wherein the housing support brackets of adjacent voltage subsection parts are detachably connected, and the arc channels of at least two voltage subsection parts are sequentially communicated along the axial direction to form an arc flow channel (12').
Description
Technical Field
The disclosure relates to the technical field of plasma generators, in particular to a boosting device of a plasma generator and the plasma generator.
Background
With the rapid development of modern industry, the application of high-power plasma generators, such as ignition of low-quality pulverized coal, hazardous waste treatment, chemical metallurgy and the like, is more and more extensive. The combined booster of the present large power plasma generator has diversified structures, but the common characteristics are that the plasma generator generates a plasma torch meeting the requirements by passing through working gas without mutual interference.
The power of the plasma generator needs to be increased without reducing the service life, and a method of increasing voltage is often adopted, so that the lengthening of the arc length becomes a main way for smoothly realizing the power increase of the plasma generator. The conventional booster device usually adopts an integral structure, and the length and other parameters of the booster device can be designed according to the working requirement of the plasma generator. In practice, the structure is difficult to process, and if the boosting device is locally burnt in the working process, the boosting device needs to be integrally replaced, so that the cost is high.
Disclosure of Invention
The embodiment of the disclosure provides a plasma generator boosting device and a plasma generator, which can more flexibly meet the use requirement of the plasma generator.
According to a first aspect of the present disclosure, there is provided a plasma generator boosting device comprising:
comprising at least two voltage-segmenting parts arranged coaxially, the voltage-segmenting parts comprising:
a housing support frame having a cavity; and
the auxiliary anode is coaxially arranged in the cavity and is provided with an arc channel along the axial direction;
the shell supporting frames of the adjacent voltage subsection parts are detachably connected, and the arc channels of at least two voltage subsection parts are sequentially communicated in the axial direction to form an arc flow channel.
In some embodiments, the plasma generator boosting device further includes a fastener, a plurality of connecting portions are circumferentially provided on the outer wall of the housing support frame at positions close to the end portions, the connecting portions are provided with mounting holes, and the connecting portions of adjacent housing support frames are butted and fixed by the fastener through the mounting holes.
In some embodiments, the arc channels of at least two voltage segment components differ in longitudinal cross-sectional shape.
In some embodiments, the auxiliary anode of at least part of the voltage segment means comprises in axial direction:
at least two anode segments, the longitudinal cross-sectional shapes of the arc channels corresponding to each anode segment are not identical.
In some embodiments, the housing support shelf and the auxiliary anode have a gap therebetween in a radial direction, the gap forming a cooling channel for a cooling medium to pass through.
In some embodiments, a plurality of support bosses are circumferentially spaced on an inner wall of the housing support shelf and configured to support an outer wall of the auxiliary anode, with cooling channels formed between adjacent support bosses.
In some embodiments, the inner wall of the housing holder is provided with a support ring configured to support the outer wall of the auxiliary anode, and the support ring is provided with a plurality of flow holes for passing the cooling medium.
In some embodiments, the at least two voltage segment components comprise:
the first voltage subsection component is positioned at the first end of the boosting device, and a first air inlet hole is arranged at a position corresponding to the cathode except the outer end of the first voltage subsection component and is configured to introduce primary working gas into the arc channel; and
and the second voltage subsection component is positioned at the second end of the boosting device, and a second air inlet hole is arranged on the side wall of the second voltage subsection component, which is close to the outer end and is configured to introduce secondary working gas into the arc channel.
In some embodiments, the plasma generator booster further comprises a secondary air ring, the second voltage dividing member further comprises a second flange disposed at an outer end of the housing support frame, an annular groove is disposed on an outer end surface of the second flange, the secondary air ring is disposed in the annular groove, and the second air inlet is disposed in the secondary air ring.
In some embodiments, the arc flow path includes a first path, a second path, and a third path arranged in sequence along the arc flow direction;
the radial dimension of the first passage is gradually reduced along the arc flow direction;
the radial dimension of the second channel is consistent along the arc flow direction;
the radial dimension of the third passage increases gradually in the arc flow direction.
According to a third aspect of the present disclosure, there is provided a plasma generator comprising: the plasma generator boosting device of the above embodiment.
In some embodiments, the at least two voltage segment components comprise: a first voltage segment component and a second voltage segment component respectively located at a first end and a second end of the booster device; the plasma generator further comprises:
a cathode disposed at a position near an end of an arc path of the first voltage segment; and
and the main anode is coaxially arranged at the outer end part of the second voltage subsection component.
The plasma generator boosting device disclosed by the embodiment of the disclosure is formed by combining at least two voltage subsection components, the adjacent voltage subsection components are detachably connected, and each voltage subsection component can be flexibly assembled and disassembled so as to meet the requirement of the plasma boosting device on voltage. Moreover, the whole axial dimension of the boosting device is long, the boosting device is easy to process by dividing into a plurality of voltage segmentation components, the process is simple, the quality of parts is easy to control, the storage and the management are convenient, and the assembly and the disassembly are easy. In addition, if the booster device is burnt during the working process of the plasma generator, the voltage subsection part which fails due to burning can be accurately and conveniently replaced.
Drawings
The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the disclosure and together with the description serve to explain the disclosure and not to limit the disclosure. In the drawings:
fig. 1 is a cross-sectional view of some embodiments of a plasma generator boost device of the present disclosure.
Fig. 2 is a cross-sectional view of other embodiments of a plasma generator boost device of the present disclosure.
Fig. 3 is a schematic structural view of some embodiments of the cross-sectional view a-a of fig. 1.
Fig. 4 is a schematic structural view of other embodiments of the sectional view a-a of fig. 1.
Fig. 5 is a schematic structural view of still other embodiments of the cross-sectional view a-a of fig. 1.
Fig. 6 is a schematic structural diagram of a plasma generator according to the present disclosure employing the boosting device shown in fig. 1.
Fig. 7 is a schematic structural diagram of a plasma generator according to the present disclosure employing the boosting device shown in fig. 2.
Detailed Description
The present disclosure is described in detail below. In the following paragraphs, different aspects of the embodiments are defined in more detail. Aspects so defined may be combined with any other aspect or aspects unless clearly indicated to the contrary. In particular, any feature considered to be preferred or advantageous may be combined with one or more other features considered to be preferred or advantageous.
The terms "first", "second", and the like in the present disclosure are merely for convenience of description to distinguish different constituent elements having the same name, and do not denote a sequential or primary-secondary relationship.
In the description of the present invention, it should be understood that the terms "inner", "outer", "upper", "lower", "left", "right", "front" and "rear" and the like indicate orientations or positional relationships that are defined based on the directions of the flow of the working gas in the booster device of the plasma generator, and are used only for convenience of description of the present invention, and do not indicate or imply that the device referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore, should not be construed as limiting the scope of the present invention. The references to "axial", "circumferential" and "radial" in the subsequent embodiments are with respect to the plasma generator or the pressure boosting device.
The present disclosure provides a plasma generator boost device, in some embodiments, as shown in fig. 1-7, comprising: at least two voltage segment components coaxially arranged, each voltage segment component comprising: the shell supporting frame is of a cylindrical structure and is provided with a cavity, the auxiliary anode is coaxially arranged in the cavity, and the auxiliary anode is provided with an arc channel along the axial direction. The number of voltage segmenting parts may be selected according to the axial length of the booster device. For example, the housing support may be made of a cylindrical member made of stainless steel, and the auxiliary anode may be made of a cylindrical member made of a violet copper material.
Wherein, the shell supporting frame of adjacent voltage subsection part is connected detachably, and the arc channel of at least two voltage subsection parts is communicated with the whole arc flow channel 12 'along the axial direction, and the working gas and the formed arc flow in the arc flow channel 12' along the K direction.
As shown in fig. 6 and 7, a cathode 6 is disposed in an arc channel of a voltage subsection component at a first end (left end) of the voltage boosting device, a main anode 5 is coaxially disposed at an outer end of the voltage subsection component at a second end (right end) of the voltage boosting device, the combined auxiliary anode and the main anode 5 are connected with a positive electrode of a direct current power supply, the cathode 6 is connected with a negative electrode of the direct current power supply, electric discharge is generated between the cathode 6 and the combined auxiliary anode through a contact arc starting structure or a high-frequency arc starting device to generate electric arc, working gas is ionized and heated after passing through the high-temperature electric arc to form thermal plasma, and then the thermal plasma is ejected from one end of the main anode 5 under the driving of the pressure of the gas to form a plasma.
The boosting device of the embodiment is formed by combining at least two voltage subsection components, the adjacent voltage subsection components are detachably connected, and each voltage subsection component can be flexibly assembled and disassembled so as to meet the requirement of the boosting device of the plasma generator on voltage and well meet the requirement of the plasma generator on high power.
Moreover, the whole axial dimension of the boosting device is long, the boosting device is easy to process by dividing into a plurality of voltage segmentation components, the process is simple, the quality of parts is easy to control, the storage and the management are convenient, and the assembly and the disassembly are easy. In addition, if the booster device is burnt during the working process of the plasma generator, the voltage subsection part which fails due to burning can be accurately and conveniently replaced. Therefore, the manufacturing and management cost can be reduced, the product competitiveness is improved, the stable and reliable operation of the plasma generator is guaranteed for users, and the maintenance cost is reduced.
Therefore, the structure of the combined type boosting device also reduces the complexity of the structure of the plasma generator and simultaneously reduces the difficulty of processing, assembling and maintaining the plasma generator.
In some embodiments, the plasma generator boosting device further includes a fastener, a plurality of connecting portions are circumferentially provided on the outer wall of the housing support frame at positions close to the end portions, the connecting portions are provided with mounting holes, and the connecting portions of adjacent housing support frames are butted and fixed by the fastener through the mounting holes. Preferably, the connection does not extend radially beyond the outer side wall of the housing support bracket. For example, the fasteners may be screws, pins, or the like.
The embodiment can ensure that the shell supporting frames of the adjacent voltage subsection components are connected in a butt joint mode of the end parts, has simple structure, is beneficial to assembly, is burnt out in the booster device, is convenient to replace the voltage subsection components which are failed due to the burning out, and is easy to maintain. Moreover, the connection mode avoids nesting arrangement between adjacent voltage subsection components, can reduce the radial size of the booster device, and is easy to assemble and maintain.
In some embodiments, as shown in fig. 1 and 2, the arc channels of at least two voltage segment components differ in longitudinal cross-sectional shape. The structure can flexibly meet the requirement of the booster device on the section size of the arc flow channel 12' on the whole length so as to meet the requirement of the plasma generator on voltage, and the structure is convenient for part processing and easy to ensure the part processing precision.
In some embodiments, as shown in fig. 1, the auxiliary anode of at least part of the voltage segmented component comprises in axial direction: at least two anode segments, the longitudinal cross-sectional shapes of the arc channels corresponding to each anode segment are not identical. According to the embodiment, the auxiliary anode of the single voltage subsection component is designed into the subsection structure, so that the longer auxiliary anode is easy to process, arc channels with different section shapes can be formed through combination, the voltage requirement of the booster device is met, and the power requirement and different performance requirements of the high-power plasma generator are easily met.
Preferably, during machining and assembly, the at least two anode segments are first rough machined, the ends of the at least two anode segments are welded to form an integral auxiliary anode, the integral auxiliary anode is then finish machined, and the integral auxiliary anode is finally inserted into the cavity of the housing support frame to form the voltage segmented component.
As shown in fig. 1 and 2, the housing support frame and the auxiliary anode have a gap therebetween in the radial direction, the gap forming a cooling passage through which the cooling medium 3 passes. The main body part of the cooling channel is of an annular structure, and can sufficiently cool the whole circumferential direction of the auxiliary anode. For example, the cooling medium 3 may be a cooling liquid or a cooling gas, and the cooling liquid may be cooling water or the like.
Fig. 3 is a sectional view taken along a-a of fig. 1, in which a plurality of supporting bosses 111 are circumferentially spaced on an inner wall of the housing supporting frame, and the plurality of supporting bosses 111 surround a radial inner side wall to form a discontinuous annular hole configured to support an outer wall of the auxiliary anode, and a cooling channel is formed between adjacent supporting bosses 111.
This embodiment except can supporting auxiliary anode, makes auxiliary anode installation stable, also can not produce any influence to cooling medium 3's normal circulation flow, makes cooling medium pass through adjacent clearance that supports boss 111 to with the cooling channel intercommunication of adjacent voltage segmentation part, make the whole auxiliary anode of booster unit can both obtain fine cooling, still simplified cooling structure's the degree of difficulty that sets up. As shown in fig. 6 and 7, the cooling medium may be introduced from the end of the cooling passage through the cooling medium supply member.
Preferably, a seal is added, for example, an O-ring seal, at the junction where the cooling medium and the working gas pass.
Preferably, as shown in fig. 1 and 2, the housing support brackets are provided with mounting flanges at their ends, for example, a first mounting flange 15 and a second mounting flange 25 are provided at their ends adjacent to each other in the drawing, and a plurality of support bosses 111 are provided on the inner walls of the mounting flanges and project radially toward each other to support and position the auxiliary anode. Thereby, the auxiliary anode is supported only by the end portions, and the middle length section can form a cooling channel to improve the cooling effect.
As shown in fig. 3, three support bosses 111 are provided at regular intervals in the circumferential direction. Alternatively, in order to further improve the supporting effect, four supporting bosses 111 are provided at regular intervals in the circumferential direction. Generally, the number of the support bosses 111 is not less than three, and the number of the support bosses 111 may be selected to balance the support effect and the cooling effect. The structure is suitable for the condition that the outer diameter of the auxiliary anode is small, and the supporting and positioning effects can be met through the plurality of supporting bosses 111.
As shown in fig. 4, the inner wall of the housing holder is provided with a support ring 16, for example, the support ring 16 may be provided on a mounting flange configured to support the outer wall of the auxiliary anode, and the support ring 16 is provided with a plurality of flow holes 161 through which the cooling medium 3 passes.
The embodiment is suitable for the condition that the radial size of the outer wall of the auxiliary anode is larger, and stable supporting force can be obtained and the positioning effect can be improved by arranging the supporting ring 16 to form continuous support in the circumferential direction; moreover, the plurality of circulation holes 161 are formed in the circumferential direction, so that the normal circulation flow of the cooling medium 3 is not affected, the cooling passages of the adjacent voltage subsection parts can be communicated, the whole auxiliary anode of the boosting device can be cooled well, and the difficulty in arrangement of a cooling structure is simplified.
It should be added that, when the number of the voltage segment parts is more than 2, the mounting flange of each two adjacent housing support brackets can be provided with the above-mentioned support bosses 111 or the circumferentially spaced flow holes 161 to meet the cooling requirement.
In some embodiments, the at least two voltage segment components comprise: a first voltage segment means 1 and a second voltage segment means 2. The first voltage subsection component 1 is located at the first end (left end) of the voltage boosting device, and a first air inlet hole 71 is arranged at a position corresponding to the cathode 6 except the outer end of the first voltage subsection component 1 and is configured to introduce a primary working gas Q1 into the arc channel. Specifically, as shown in fig. 6 and 7, the outer end of the first voltage subsection 1 is coaxially provided with a third flange 7, the third flange 7 may be a cylindrical structure, the first air inlet hole 71 is provided on the side wall of the third flange 7, and the primary working gas Q1 enters the arc channel through the gap between the third flange 7 and the cathode 6. The second voltage subsection 2 is located at the second end (right end) of the voltage boosting device, and a second air inlet hole 241 is arranged on the side wall of the second voltage subsection 2 near the outer end and is configured to introduce a secondary working air Q2 to the arc channel.
According to the embodiment, working gas is not required to be introduced into each voltage subsection component, working gas is only required to be introduced into the head end and the tail end of the boosting device, working gas is not required to be introduced into the length section between the head section and the tail section, and the purpose of improving the working voltage of the plasma generator can be achieved through the combination of different voltage subsection components. Moreover, when the grading quantity is large, interference among voltage subsection components can not be generated, the parameters of the working gas are easy to adjust, the requirement on the skill level of an operator is reduced, and the internal and peripheral structures of the plasma generator can be simplified.
While the voltage and hence the power of each voltage stage is varied (increased or decreased) by varying (lengthening or shortening) the length of the voltage stage, the pressure and flow of the primary working gas Q1 and the secondary working gas Q2 can be adjusted.
In some embodiments, as shown in fig. 1 and 2, the booster device further includes a secondary air ring 25, the second voltage subsection 2 further includes a second flange 24 provided at an outer end of the housing support frame, an annular groove is provided on an outer end surface of the second flange 24, the secondary air ring 25 is provided in the annular groove, and the second air inlet 241 is provided in the secondary air ring 25. The secondary working gas Q2 can be introduced into the arc flow path 12' by providing the secondary air ring 25, and the secondary working gas Q2 and the cooling medium 3 can be made independent of each other by providing the secondary air ring 25 on the second flange 24.
In some embodiments, as shown in fig. 1 and 2, the arc flow path 12' includes a first path 12A, a second path 12B, and a third path 12C, which are arranged in sequence along the arc flow direction K. Wherein, along the arc flow direction K, the radial dimension of the first channel 12A is gradually reduced, along the arc flow direction K, the radial dimension of the second channel 12B is consistent, and along the arc flow direction K, the radial dimension of the third channel 12C is gradually increased.
In order to meet different performance requirements, the arc flow channel 12' needs to have different combinations of shapes, and therefore the number of inventive solutions for meeting the combined boost device of the high power plasma generator is relatively large. The present disclosure has been described with reference to two representative modular boost devices comprising two voltage section components.
In some embodiments, as shown in fig. 2, the voltage step-up means comprises coaxially arranged first and second voltage section members 1, 2.
The first voltage segment means 1 comprises: a first housing support 11 and a first auxiliary anode 12, the first auxiliary anode 12 being coaxially mounted within the cavity of the first housing support 11, the first auxiliary anode 12 having an arc path. Furthermore, a first cooling channel 13 is formed between the first housing support 11 and the first auxiliary anode 12.
The second voltage segmenting part 2 comprises: a second housing support frame 21 and a second auxiliary anode 22, the second auxiliary anode 22 being coaxially mounted within the cavity of the second housing support frame 21, the second auxiliary anode 22 having an arc path. Also, a second cooling passage 23 is formed between the second housing support frame 21 and the second auxiliary anode 22.
The first voltage subsection 1 and the second voltage subsection 2 are detachably connected, specifically, the first housing support 11 and the second housing support 21 are detachably connected, and the arc passage of the first auxiliary anode 12 and the arc passage of the second auxiliary anode 22 are sequentially communicated in an axial direction to form an arc flow passage 12 ', and the working gas and the formed arc flow in the direction K in the arc flow passage 12'.
The end of the first voltage subsection 1 remote from the second voltage subsection 2 is provided with a first flange 14 for fixing the first auxiliary anode 12. The one end that first voltage segmentation part 1 was kept away from to second voltage segmentation part 2 is equipped with second grade wind ring 25, and second voltage segmentation part 2 is equipped with the annular groove including establishing second flange 24 in second shell supporting rack 21 outer end on the outer terminal surface of second flange 24, and second grade wind ring 25 establishes in the annular groove, and second inlet port 241 sets up in second grade wind ring 25.
The cross section of the arc channel of the first auxiliary anode 12 along the arc flowing direction K is gradually reduced and then the first diameter is kept constant, the cross section of the arc channel of the second auxiliary anode 22 along the arc flowing direction K is gradually reduced from the first diameter and then the second diameter is kept constant, and then the cross section of the arc channel is gradually increased from the second diameter at the position of the second flange 24, and the second diameter is smaller than the first diameter.
In other embodiments, as shown in FIG. 1, which is substantially the same as the boosting device of the embodiment shown in FIG. 2, the arc flow path 12' of the two is different due to the requirement of satisfying the high power plasma generators with different performance.
The present embodiment is different from fig. 2 in that the first auxiliary anode 12 is divided into the first anode segment 121 and the second anode segment 122 along the arc flowing direction K, and the first anode segment 121 and the second anode segment 122 have different longitudinal sectional shapes, thereby being capable of reducing the difficulty of processing. Specifically, the cross section of the arc path of the first anode segment 121 along the arc flowing direction K is gradually decreased and then maintained at the third diameter, the cross section of the arc path of the second anode segment 122 along the arc flowing direction K is gradually decreased from the third diameter to the fourth diameter, and the cross section of the arc path of the second auxiliary anode 22 along the arc flowing direction K is maintained at the fourth diameter and then gradually increased.
The first auxiliary anode 12 is first formed by the first anode segment 121 and the second anode segment 122 through the process of segment roughing → welding → finishing, and is inserted into the cavity of the first housing support 11 to form the first voltage segment component 1. And a second auxiliary anode 22 is fitted into the cavity of the second housing support 12 to form the second voltage subsection 2. The two ends of the auxiliary anodes of the first voltage subsection component 1 and the second voltage subsection component 2 are supported by flanges, and the rest parts are suspended to form an annular cooling channel. The first and second housing support frames 11 and 12 may be positioned by the spigots, accurately fitted together, then fixed by fasteners, without limitation, and finally the secondary air ring 25 is inserted into the annular groove of the second flange 24.
Secondly, the present disclosure provides a plasma generator, which in some embodiments comprises the plasma generator boosting device of the above embodiments.
In some embodiments, as shown in fig. 6 and 7, the at least two voltage segment components comprise: a first voltage section part 1 and a second voltage section part 2 respectively located at a first end and a second end of the boosting device; the plasma generator further comprises: a cathode 6 provided at a position near an end of an arc path of the first voltage segment 1; and a primary anode 5, which is coaxially arranged at the outer end of the second voltage subsection 2, for example, the primary anode 5 may be of a tubular construction, the inner diameter of which may be larger than the inner diameter of the arc channel of the second voltage subsection 2, near the primary anode 5.
The sections of the booster device of the plasma generator are mutually independent and can be organically combined, the processing difficulty can be reduced, the booster device is easy to disassemble and assemble, the structure is simplified, the operating voltage can be increased, the power is increased, different performance requirements of the generator are met, the air inlet stage number of the generator can be simplified, the working gas parameters can be conveniently adjusted, and the internal and peripheral structures of the generator can be simplified.
The boosting device of the plasma generator is arranged between a cathode 6 and a main anode 5 and is connected with the main anode 5 at the same potential to form a plasma electric arc channel, working gas enters in two paths, one path enters from the position between the cathode 6 and a combined boosting device in a rotating mode, the other path enters from the position between the combined boosting device and the main anode 5 in a rotating mode, the rotating directions of the two paths of working gas can be the same or different, under the combined action of cyclone compression and electric arc channel mechanical compression, the working gas is ionized and heated after passing through a high-temperature electric arc to form heat plasma, and then the working gas is ejected out from one end of the main anode 5 under the driving of gas pressure to form a plasma torch 4. The cooling medium 3 flows through the cooling channels between the auxiliary anodes and the housing support frame, cooling the auxiliary anodes and finally returning through the channels in the interlayer of the housing support frame.
The embodiments provided by the present disclosure are described in detail above. The principles and embodiments of the present disclosure are explained herein using specific examples, which are set forth only to help understand the method and its core ideas of the present disclosure. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present disclosure without departing from the principle of the present disclosure, and such improvements and modifications also fall within the scope of the claims of the present disclosure.
Claims (12)
1. A plasma generator boost device comprising at least two voltage-sectioning members arranged coaxially, said voltage-sectioning members comprising:
a housing support frame having a cavity; and
an auxiliary anode coaxially mounted within the cavity, the auxiliary anode having an arc channel in an axial direction;
wherein the housing support brackets of adjacent voltage subsection parts are detachably connected, and the arc channels of at least two voltage subsection parts are sequentially communicated along the axial direction to form an arc flow channel (12').
2. A plasma generator booster apparatus as claimed in claim 1, further comprising a fastening member, wherein the outer wall of the housing support frame is provided with a plurality of connecting portions in a circumferential direction at positions near the ends, the connecting portions are provided with mounting holes, and the connecting portions adjacent to the housing support frame are butted and fixed by the fastening member through the mounting holes.
3. A plasma generator boost device according to claim 1, characterized in that the longitudinal cross-sectional shapes of the arc channels of the at least two voltage subsection means are different.
4. A plasma generator boost device according to claim 1, in which the auxiliary anode of at least part of the voltage section member comprises, in the axial direction:
at least two anode segments, the longitudinal cross-sectional shapes of the arc channels corresponding to each anode segment are not identical.
5. A plasma generator step-up device according to claim 1, characterised in that there is a gap in the radial direction between the housing support and the auxiliary anode, said gap forming a cooling channel for the passage of a cooling medium (3).
6. A plasma generator booster device according to claim 5, characterized in that a plurality of support bosses (111) are provided at circumferentially spaced intervals on an inner wall of the housing holder, configured to support an outer wall of the auxiliary anode, the cooling channel being formed between adjacent support bosses (111).
7. A plasma generator booster device according to claim 5, characterized in that the inner wall of the housing holder is provided with a support ring (16) configured to support the outer wall of the auxiliary anode, the support ring (16) being provided with a plurality of flow holes (161) for the cooling medium (3) to pass through.
8. A plasma generator boost device in accordance with claim 1, wherein said at least two voltage section components comprise:
the first voltage subsection component (1) is positioned at the first end of the boosting device, a first air inlet hole (71) is formed in the position, corresponding to the cathode (6), except the outer end of the first voltage subsection component (1), and is configured to introduce primary working gas (Q1) into the arc channel; and
and the second voltage subsection component (2) is positioned at the second end of the voltage boosting device, and a second air inlet hole (241) is arranged on the side wall of the second voltage subsection component (2) close to the outer end and is configured to introduce secondary working air (Q2) into the arc channel.
9. A plasma generator booster device according to claim 8, characterized by further comprising a secondary air ring (25), wherein the second voltage dividing member (2) further comprises a second flange (24) provided at the outer end of the housing support frame, an annular groove is provided on the outer end surface of the second flange (24), the secondary air ring (25) is provided in the annular groove, and the second air inlet holes (241) are provided in the secondary air ring (25).
10. A plasma generator boost device according to claim 1, characterized in that said arc flow path (12') comprises a first path (12A), a second path (12B) and a third path (12C) arranged in sequence along the arc flow direction (K);
-the radial dimension of said first channel (12A) is progressively reduced along the arc flow direction (K);
the radial dimensions of the second channels (12B) are uniform along the arc flow direction (K);
the radial dimension of the third channel (12C) increases gradually in the arc flow direction (K).
11. A plasma generator, comprising: a plasma generator booster according to any one of claims 1 to 10.
12. The plasma generator of claim 11, wherein the at least two voltage segment components comprise: a first voltage section (1) and a second voltage section (2) at a first end and a second end of the booster device, respectively; the plasma generator further includes:
a cathode (6) arranged at a position close to the end of the arc channel of the first voltage subsection (1); and
and the main anode (5) is coaxially arranged at the outer end part of the second voltage subsection component (2).
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113861486A (en) * | 2021-10-11 | 2021-12-31 | 合肥综合性国家科学中心能源研究院(安徽省能源实验室) | Method and device for medium-high pressure microwave plasma jet heat treatment/preparation of high-purity material |
| CN114623060A (en) * | 2022-01-28 | 2022-06-14 | 北京控制工程研究所 | Magnetic plasma power thruster cathode and processing method thereof |
-
2020
- 2020-12-31 CN CN202011633803.2A patent/CN112770472A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113861486A (en) * | 2021-10-11 | 2021-12-31 | 合肥综合性国家科学中心能源研究院(安徽省能源实验室) | Method and device for medium-high pressure microwave plasma jet heat treatment/preparation of high-purity material |
| CN114623060A (en) * | 2022-01-28 | 2022-06-14 | 北京控制工程研究所 | Magnetic plasma power thruster cathode and processing method thereof |
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