CN112768600B - Metal oxide semiconductor sensor and preparation method thereof - Google Patents
Metal oxide semiconductor sensor and preparation method thereof Download PDFInfo
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- CN112768600B CN112768600B CN202011616172.3A CN202011616172A CN112768600B CN 112768600 B CN112768600 B CN 112768600B CN 202011616172 A CN202011616172 A CN 202011616172A CN 112768600 B CN112768600 B CN 112768600B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 145
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 123
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 122
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000010410 layer Substances 0.000 claims abstract description 102
- 239000000463 material Substances 0.000 claims abstract description 37
- 239000011241 protective layer Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 claims abstract description 26
- 238000005468 ion implantation Methods 0.000 claims abstract description 23
- 239000002033 PVDF binder Substances 0.000 claims description 84
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 84
- 238000000034 method Methods 0.000 claims description 52
- 230000008569 process Effects 0.000 claims description 21
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 15
- 238000001312 dry etching Methods 0.000 claims description 12
- 150000003254 radicals Chemical class 0.000 claims description 12
- 238000010008 shearing Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 12
- 239000000243 solution Substances 0.000 description 24
- 238000010586 diagram Methods 0.000 description 18
- 239000013078 crystal Substances 0.000 description 10
- 210000002381 plasma Anatomy 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 238000000137 annealing Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 5
- 238000001291 vacuum drying Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
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- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229920001002 functional polymer Polymers 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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- H01L31/0264—Inorganic materials
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Abstract
The invention provides a metal oxide semiconductor sensor and a preparation method thereof. A method of fabricating a metal oxide semiconductor sensor comprising the steps of: sequentially forming a gate electrode and a gate insulating layer on a substrate; forming an active island on the gate insulating layer, the active island including a source electrode, a drain electrode, and a metal oxide semiconductor pattern subjected to ion implantation; a protective layer made of a piezoelectric material or a photosensitive material is formed on the gate insulating layer on which the active island is formed. The metal oxide semiconductor sensor has high sensitivity.
Description
Technical Field
The invention relates to the technical field of semiconductor device manufacturing, in particular to a metal oxide semiconductor sensor and a preparation method thereof.
Background
The semiconductor sensor is a sensor manufactured by utilizing various physical, chemical and biological characteristics of semiconductor materials, and has wide application in various fields of military and national economy such as remote sensing, night vision, investigation, imaging and the like.
Currently, the semiconductor materials used for semiconductor sensors are mostly silicon and group III-V and group II-VI compounds. The semiconductor material has low electron mobility and poor conductive properties. Particularly, the photoelectric effect of a semiconductor is utilized, the optical signal is converted into the photosensitive sensor for outputting the electric signal, the external force received by the piezoelectric material is converted into the pressure sensor for outputting the electric signal, and the poor electrical characteristics of the semiconductor material directly affect the application range of the semiconductor sensor.
However, the above-mentioned prior art semiconductor sensor has poor sensitivity due to defects of the semiconductor material itself contained therein.
Disclosure of Invention
The invention provides a metal oxide semiconductor sensor and a preparation method thereof, which can improve the detection sensitivity of the metal oxide semiconductor sensor.
The first aspect of the present invention provides a method for manufacturing a metal oxide semiconductor sensor, comprising the steps of: sequentially forming a gate electrode and a gate insulating layer on a substrate; forming an active island on the gate insulating layer, the active island including a source electrode, a drain electrode, and a metal oxide semiconductor pattern subjected to ion implantation; a protective layer made of a piezoelectric material or a photosensitive material is formed on the gate insulating layer on which the active island is formed.
In one possible implementation manner, a protective layer made of a piezoelectric material or a photosensitive material is formed on the gate insulating layer on which the active island is formed, specifically including: a film layer of β -type polyvinylidene fluoride and/or γ -type polyvinylidene fluoride is formed on the gate insulating layer on which the active island is formed as a protective layer composed of a piezoelectric material or a photosensitive material.
In one possible implementation manner, a film layer of β -type polyvinylidene fluoride and/or γ -type polyvinylidene fluoride is formed on the gate insulating layer formed with the active island, specifically including: dissolving alpha-polyvinylidene fluoride into a solvent of N, N-dimethylformamide to form alpha-polyvinylidene fluoride solution; and coating the alpha type polyvinylidene fluoride solution on the gate insulating layer with the active island, and vacuum drying at 40-70 ℃ for 30-80 min to form a beta type polyvinylidene fluoride and/or gamma type polyvinylidene fluoride film.
In one possible implementation manner, a film layer of β -type polyvinylidene fluoride and/or γ -type polyvinylidene fluoride is formed on the gate insulating layer formed with the active island, specifically including: dissolving alpha-polyvinylidene fluoride into a solvent of N, N-dimethylformamide to form alpha-polyvinylidene fluoride solution; and coating the alpha-type polyvinylidene fluoride solution on the gate insulating layer on which the active island is formed, and applying a shearing force to the alpha-type polyvinylidene fluoride solution coated on the gate insulating layer to form a film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride.
In one possible implementation manner, a film layer of β -type polyvinylidene fluoride and/or γ -type polyvinylidene fluoride is formed on the gate insulating layer formed with the active island, specifically including: dissolving alpha-polyvinylidene fluoride into a solvent of N, N-dimethylformamide to form alpha-polyvinylidene fluoride solution; and coating the alpha-type polyvinylidene fluoride solution on the gate insulating layer with the active island, and performing an annealing process to form a beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride film.
In one possible implementation, the α -polyvinylidene fluoride solution is coated on the gate insulating layer where the active island is formed, and specifically includes: spin-coating an alpha-polyvinylidene fluoride solution onto a gate insulating layer on which active islands are formed; or the substrate formed with the gate electrode, the gate insulating layer and the active island is encapsulated in an α -polyvinylidene fluoride solution.
In one possible implementation, the forming an active island on the gate insulating layer specifically includes: forming a first metal oxide semiconductor pattern on the gate insulating layer; performing F ion implantation on the first metal oxide semiconductor pattern to form an ion-implanted metal oxide semiconductor pattern; and forming a source electrode and a drain electrode on the gate insulating layer formed with the ion-implanted metal oxide semiconductor pattern.
In one possible implementation, performing F ion implantation on the first metal oxide semiconductor pattern includes: f-based gas is processed into F-containing free radical plasma through a dry etching process, and F ion implantation is carried out on the first metal oxide semiconductor pattern by using the F-containing free radical plasma.
The second aspect of the present invention provides a metal oxide semiconductor sensor, which is manufactured by the method for manufacturing a metal oxide semiconductor sensor, and the metal oxide semiconductor sensor comprises: a substrate base; a gate electrode formed on the substrate; a gate insulating layer formed on the substrate base plate and covering the gate electrode; an active island formed on the gate insulating layer and corresponding to the gate electrode, the active island including a source electrode, a drain electrode, and a metal oxide semiconductor pattern subjected to ion implantation; and a protective layer formed on the gate insulating layer where the active island is formed.
In one possible implementation, the protective layer is a film of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride.
The invention provides a metal oxide semiconductor sensor and a preparation method thereof, and the preparation method of the metal oxide semiconductor sensor comprises the following steps: sequentially forming a gate electrode and a gate insulating layer on a substrate; forming an active island on the gate insulating layer, the active island including a source electrode, a drain electrode, and a metal oxide semiconductor pattern subjected to ion implantation; a protective layer made of a piezoelectric material or a photosensitive material is formed on the gate insulating layer on which the active island is formed. The metal oxide semiconductor pattern subjected to ion implantation has very high electron mobility and conductivity, and also forms a protective layer formed by a piezoelectric material or a photosensitive material, so that the metal oxide semiconductor pattern has the characteristics of corrosion resistance, strong weather resistance, high physical and chemical stability and the like, and can improve the sensitivity of the sensor compared with the material with low electron mobility and poor conductivity in the prior art.
Drawings
In order to more clearly illustrate the invention or the technical solutions of the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are some embodiments of the invention and that other drawings can be obtained from them without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a method for fabricating a metal oxide semiconductor sensor according to an embodiment of the present invention;
fig. 2a is a schematic structural diagram of a metal oxide semiconductor sensor in a first state in a method for manufacturing a metal oxide semiconductor sensor according to an embodiment of the present invention;
Fig. 2b is a schematic structural diagram of a metal oxide semiconductor sensor in a second state in the method for manufacturing a metal oxide semiconductor sensor according to an embodiment of the present invention;
fig. 2c is a schematic structural diagram of a metal oxide semiconductor sensor in a third state in the method for manufacturing a metal oxide semiconductor sensor according to an embodiment of the present invention;
Fig. 2d is a schematic structural diagram of a metal oxide semiconductor sensor in a fourth state in the method for manufacturing a metal oxide semiconductor sensor according to an embodiment of the present invention;
fig. 2e is a schematic structural diagram of a metal oxide semiconductor sensor in a fifth state in the method for manufacturing a metal oxide semiconductor sensor according to an embodiment of the present invention;
fig. 2f is a schematic structural diagram of a metal oxide semiconductor sensor in a sixth state in the method for manufacturing a metal oxide semiconductor sensor according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a MOS sensor according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a metal oxide semiconductor sensor according to an embodiment of the present invention, in which charges are induced under the action of external pressure;
FIG. 5 is a schematic diagram of a MOS sensor according to an embodiment of the present invention, in which charges are induced by an external light source;
Fig. 6 is an electrical characteristic curve of an ion implanted mos pattern in a mos sensor according to an embodiment of the present invention.
Reference numerals:
A 100-metal oxide semiconductor sensor; 1-a substrate base; a 2-gate; a 3-gate insulating layer; 5-active islands; 51-source; 52-drain; 53-ion-implanted metal oxide semiconductor pattern; 54-a first metal oxide semiconductor pattern; 55-a light source; 56-a pressing device; 6-a protective layer.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
Fig. 1 is a flowchart of a method for manufacturing a metal oxide semiconductor sensor according to an embodiment of the present application. Referring to fig. 1, the present application provides a method for manufacturing a metal oxide semiconductor sensor, comprising the steps of:
s100, sequentially forming a grid electrode and a grid electrode insulating layer on a substrate;
s200, forming an active island on the gate insulating layer, wherein the active island comprises a source electrode, a drain electrode and a metal oxide semiconductor pattern subjected to ion implantation;
and S300, forming a protective layer made of a piezoelectric material or a photosensitive material on the gate insulating layer on which the active island is formed.
In the scheme, the metal oxide semiconductor pattern subjected to ion implantation has very high electron mobility and conductivity, and the protective layer formed by the piezoelectric material or the photosensitive material is also formed, so that the metal oxide semiconductor pattern has the characteristics of corrosion resistance, strong weather resistance, high physical and chemical stability and the like, and can improve the sensitivity of the sensor compared with the material with low electron mobility and poor conductivity in the prior art.
Further, the sensor of the embodiment comprehensively utilizes the characteristics of the semiconductor material subjected to ion implantation and the beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride material with high dielectric property, high voltage characteristic and optical sensitivity characteristic to realize the combination of the semiconductor material and the functional polymer material, so that the sensitivity of the sensor is improved
Fig. 2a is a schematic structural diagram of a metal oxide semiconductor sensor in a first state in a method for manufacturing a metal oxide semiconductor sensor according to an embodiment of the present invention, and fig. 2b is a schematic structural diagram of a metal oxide semiconductor sensor in a second state in a method for manufacturing a metal oxide semiconductor sensor according to an embodiment of the present invention.
In step S100, sequentially forming the gate electrode 2 and the gate insulating layer 3 on the substrate 1 may specifically include: a gate metal layer is deposited on the substrate base 1 and a gate electrode 2 is formed by a single photolithography process, thus forming a metal oxide semiconductor sensor in a first state, as shown in fig. 2 a.
Then, on the basis of the metal oxide semiconductor sensor in the first state, i.e., on the substrate 1 on which the gate electrode 2 is formed, the entire gate insulating layer 3 is covered to form the metal oxide semiconductor sensor in the second state, as shown in fig. 2 b.
Here, the substrate 1 may be a glass substrate, which may be cleaned before depositing the gate metal layer. Specifically, a gate metal layer may be deposited on the substrate 1 by a physical vapor deposition method, and then the gate electrode 2 may be formed by a photolithography process. Further, a gate insulating layer 3 of SiN or SiO is deposited on the substrate 1 on which the gate electrode 2 is formed by chemical vapor deposition.
Fig. 2c is a schematic structural diagram of a metal oxide semiconductor sensor in a third state in the method for manufacturing a metal oxide semiconductor sensor according to an embodiment of the present invention, and fig. 2d is a schematic structural diagram of a metal oxide semiconductor sensor in a fourth state in the method for manufacturing a metal oxide semiconductor sensor according to an embodiment of the present invention.
In step S200, an active island 5 is formed on the gate insulating layer 3, the active island 5 including a source electrode 51, a drain electrode 52, and an ion-implanted metal oxide semiconductor pattern 53. The ion-implanted metal oxide semiconductor pattern 53 specifically refers to a semiconductor film having a high electron state formed by ion-implanting the first metal oxide semiconductor pattern 53. And an active island 5 is formed on the gate insulating layer 3, specifically including:
A first metal oxide semiconductor pattern 54 is formed on the gate insulating layer 3, referring to fig. 2c. Specifically, a metal oxide semiconductor layer, for example, an IGZO layer is prepared on the basis of the metal oxide semiconductor sensor in the second state, i.e., on the gate insulating layer 3, by a physical vapor deposition method, and the first metal oxide semiconductor pattern 54 is formed by a photolithography process to form the metal oxide semiconductor sensor in the third state.
Referring to fig. 2d, circles represent F radical plasma, and on the basis of the metal oxide semiconductor sensor in the third state, F ion implantation is performed on the first metal oxide semiconductor pattern 54 to form an ion-implanted metal oxide semiconductor pattern 53, and a metal oxide semiconductor sensor in the fourth state is formed.
In the embodiment of the present application, performing F ion implantation on the first metal oxide semiconductor pattern 54 includes: the F-based gas is processed into F-containing radical plasma by a dry etching process, and F ion implantation is performed on the first metal oxide semiconductor pattern 54 using the F-containing radical plasma.
Illustratively, after the first metal oxide semiconductor pattern 54 is formed, the first metal oxide semiconductor pattern 54 is processed using a gas containing an F-system, such as at least one of the CF 4、NF3. Specifically, at least one of the F-containing gases, for example, CF 4、NF3, is introduced into the equipment of the dry etching process, the above gases are prepared as F-containing radical plasma using the equipment of the dry etching process, and the F-containing radical plasma may be injected into the first mos pattern 54 in the equipment of the dry etching process, thereby forming a semiconductor film having a high electron state.
It will be appreciated that F-containing radical plasmas with high concentrations and low damage can be produced by varying the dry etching process conditions in dry etching process equipment. Meanwhile, the implantation amount of the F-containing radical plasma plays an important role in the electrical characteristics of the semiconductor device.
In the embodiment of the application, in order to realize the optimization of controlling the F-containing free radical injection of the semiconductor layer, the gas flow (volume flow) of the F-containing gas introduced into the equipment of the dry etching process can be set to 300 sccm-700 sccm, the pressure of the gas is set to 0.2 Mpa-0.5 Mpa, and the power of the equipment of the dry etching process is set to 15 kW-30 kW. With the above parameters, the finally formed ion-implanted metal oxide semiconductor pattern 53 can be made to have excellent electrical characteristics.
Fig. 2e is a schematic structural diagram of a metal oxide semiconductor sensor in a fifth state in the method for manufacturing a metal oxide semiconductor sensor according to an embodiment of the present invention.
Referring to fig. 2e, the source electrode 51 and the drain electrode 52 are formed on the basis of the metal oxide semiconductor sensor in the fourth state, i.e., on the gate insulating layer 3 on which the ion-implanted metal oxide semiconductor pattern 53 is formed. Specifically, a source-drain metal layer is formed on the gate insulating layer 3 by physical vapor deposition, and the source-drain metal layer is formed into the source electrode 51 and the drain electrode 52 by one photolithography process to form the metal oxide semiconductor sensor in the fifth state.
In step S300, a protective layer 6 made of a piezoelectric material or a photosensitive material is formed on the gate insulating layer 3 on which the active islands 5 are formed. The protective layer 6 functions as a piezoelectric, photosensitive material in the metal oxide semiconductor sensor 100, and the presence of the protective layer 6 can also protect the electrical characteristics of the ion-implanted metal oxide semiconductor pattern 53.
Fig. 2f is a schematic structural diagram of a metal oxide semiconductor sensor in a sixth state in the method for manufacturing a metal oxide semiconductor sensor according to an embodiment of the present invention.
Specifically, a film layer of β -type polyvinylidene fluoride and/or γ -type polyvinylidene fluoride may be formed on the basis of the metal oxide semiconductor sensor in the fifth state, i.e., on the gate insulating layer 3 on which the active islands 5 are formed, as the protective layer 6 composed of a piezoelectric material or a photosensitive material, and the metal oxide semiconductor sensor in the sixth state may be formed, as shown in fig. 2 f.
And the film layer of beta type polyvinylidene fluoride and/or gamma type polyvinylidene fluoride is used as the protective layer 6, so that the protective layer 6 has the advantages of corrosion resistance, strong weather resistance, high physical and chemical stability and the like. In normal production and preparation, the common polyvinylidene fluoride polymer material does not have electrical characteristics, the physical characteristics are mainly determined by the crystal structures, the main crystal structure types are alpha, beta and gamma, the alpha crystal structure does not have electrical characteristics, and only beta and gamma polyvinylidene fluoride has excellent piezoelectric and dielectric characteristics, and is prepared by application and functional materials, because the beta and gamma phase crystal form molecular chain structures of the polyvinylidene fluoride have large intermolecular dipole moment due to the TTT conformation, so that the polyvinylidene fluoride polymer material has good dielectric characteristics. The protective layer 6 in the embodiment of the present application just uses the film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride as the protective layer 6 to protect the electrical characteristics of the metal oxide semiconductor pattern 53 after ion implantation. So that the metal oxide semiconductor sensor 100 has the characteristics of high sensitivity and high reliability.
The method of forming a film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride is specifically described below.
Specifically, a film layer of β -type polyvinylidene fluoride and/or γ -type polyvinylidene fluoride is formed on a gate insulating layer on which an active island is formed, specifically including:
Dissolving alpha-polyvinylidene fluoride into a solvent of N, N-dimethylformamide to form alpha-polyvinylidene fluoride solution;
The alpha type polyvinylidene fluoride solution is coated on the gate insulating layer on which the active island is formed, and the film layer of beta type polyvinylidene fluoride and/or gamma type polyvinylidene fluoride is formed through the following three methods.
The method comprises the following steps: and coating the alpha type polyvinylidene fluoride solution on the gate insulating layer with the active island to form a first device, and drying in vacuum at 40-70 ℃ for 30-80 min to form a beta type polyvinylidene fluoride and/or gamma type polyvinylidene fluoride film. The first device can be placed in a vacuum box, so that the vacuum drying box can be rapidly pumped, and of course, different pumping rates and vacuum drying temperatures affect the contents of different beta-type crystal structures. The vacuum drying time can be 30 min-80 min, and the drying temperature of the vacuum drying is 40-70 ℃.
The second method is as follows: and applying an alpha-type polyvinylidene fluoride solution to the gate insulating layer on which the active islands are formed to form a second device, and applying a shearing force to the alpha-type polyvinylidene fluoride solution applied to the gate insulating layer to form a film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride.
Specifically, the friction equipment with high shearing force is adopted to rapidly rub the surface of the second device so as to form enough shearing force, and the action of the shearing force has a stretching induction effect on a macromolecular structure, so that the generation of a beta-type crystal structure is facilitated, and the beta-crystal contents prepared by different shearing pressures and rates are different. The shear force is exemplified in the range of 20Mpa to 60Mpa, and the application speed of the shear force is exemplified in the range of 0.5m/s to 3m/s.
And a third method: and coating the alpha-type polyvinylidene fluoride solution on the gate insulating layer formed with the active island to form a third device, and coating the alpha-type polyvinylidene fluoride solution on the gate insulating layer formed with the active island, and then performing an annealing process to form a film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride.
Specifically, the third device is placed on a high-temperature bench for annealing, polyvinylidene fluoride which is converted from alpha crystals to gamma crystals is generated, so that the polyvinylidene fluoride has piezoelectric characteristics, different annealing temperatures and annealing time influence the generation of gamma crystal structures, the temperature range of the annealing process is 40-70 ℃, and the time range of the annealing process is 24-168 hr.
In the embodiment of the application, the application of the alpha polyvinylidene fluoride solution to the gate insulating layer with the active island formed thereon may include: spin-coating an alpha-polyvinylidene fluoride solution onto a gate insulating layer on which active islands are formed; or the substrate formed with the gate electrode, the gate insulating layer and the active island is encapsulated in an α -polyvinylidene fluoride solution.
In this embodiment, the method for manufacturing the mos sensor 100 includes the following steps: sequentially forming a gate electrode and a gate insulating layer 3 on a substrate 1; forming an active island 5 on the gate insulating layer 3, the active island 5 including a source electrode 51, a drain electrode 52, and an ion-implanted metal oxide semiconductor pattern 53; a protective layer 6 composed of a piezoelectric material or a photosensitive material is formed on the gate insulating layer 3 on which the active islands 5 are formed. The method combines the existing metal oxide semiconductor production process, optimizes and prepares the oxide semiconductor sensor with high performance through process conditions, is applicable to various intelligent switches, display devices and other fields, and has higher economic added value.
Example two
Fig. 3 is a schematic structural diagram of a metal oxide semiconductor sensor 100 according to an embodiment of the present invention, and referring to fig. 3, the embodiment provides a metal oxide semiconductor sensor 100 manufactured by the method for manufacturing a metal oxide semiconductor sensor according to the first embodiment, wherein the method for manufacturing a metal oxide semiconductor sensor is described in detail in the first embodiment, and is not described herein again.
The metal oxide semiconductor sensor 100 in the present embodiment includes: a substrate 1; a gate electrode 2, the gate electrode 2 being formed on the substrate 1; a gate insulating layer 3, the gate insulating layer 3 being formed on the substrate base 1 and covering the gate electrode 2; an active island 5, the active island 5 being formed on the gate insulating layer 3 and corresponding to the position of the gate electrode 2, the active island 5 including a source electrode 51, a drain electrode 52, and an ion-implanted metal oxide semiconductor pattern 53; a protective layer 6, the protective layer 6 being formed on the gate insulating layer 3 provided with the active islands 5.
Wherein the protective layer 6 is a film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride. And the ion-implanted metal oxide semiconductor pattern 53 is an F ion-implanted metal oxide semiconductor pattern.
The damage of the semiconductor film layer (the metal oxide semiconductor pattern 53 subjected to ion implantation) in the metal oxide semiconductor sensor 100 of the present embodiment is low, and the semiconductor film layer after the F-forming has very high electron mobility and conductivity characteristics, which improves the sensitivity of the sensor device. The sensor device with high sensitivity is favorable for sensing micro pressure, light and the like, and the application effect under different scenes is good. And the photoetching technology adopted in the preparation process can utilize the existing photoetching technology of 5Mask and 4Mask, and the cost is low.
In the embodiment of the application, the metal oxide semiconductor sensor 100 prepared by the method has higher pressure-sensitive characteristic and photosensitive characteristic, and under the action of different pressures and light sources induced by the device, molecular torque changes along with the adjustment of a polyvinylidene fluoride molecular structure, and the metal oxide semiconductor is induced to generate more conductive ions to form conducting current so as to be perceived rapidly.
The following describes a metal oxide semiconductor sensor prepared by the method of example one, under the action of external pressure and light source, induced charge model. Fig. 4 is a schematic diagram of a metal oxide semiconductor sensor according to an embodiment of the present invention, in which charges are induced under an external pressure, and fig. 5 is a schematic diagram of a metal oxide semiconductor sensor according to an embodiment of the present invention, in which charges are induced under an external light source.
Referring to fig. 4 and 5, the molecular structure in the protective layer 6 is represented by an ellipse, and electrons in the ion-implanted metal oxide semiconductor pattern 53 are represented by a circle, and in the case of pressurizing both ends of the source electrode 51 and the substrate 1 of the metal oxide semiconductor sensor 100, the drain electrode 52 may be a signal output end of the sensor, and the output end of the detection drain electrode 52 may detect the sensitivity of the metal oxide semiconductor sensor 100. In fig. 4, a certain pressure is applied to the mos sensor 100 by the pressing device 56, in fig. 5, the mos sensor 100 is irradiated by the light source 55, and referring to fig. 4 and 5, it is known that a large number of electrons appear in the ion-implanted mos pattern 53, and the molecular structure in the protective layer 6 is changed from original disorder to extend along the electric field direction, which also greatly improves the sensitivity of the mos sensor 100.
Fig. 6 is an electrical characteristic curve of an ion implanted mos pattern in a mos sensor according to an embodiment of the present invention.
Referring to fig. 6, the curve shown by the broken line is the TFT transfer characteristic of the first metal oxide semiconductor pattern 54 before ion implantation, and the curve shown by the solid line is the TFT transfer characteristic of the semiconductor pattern after ion implantation, i.e., the first metal oxide semiconductor pattern 53. As can be seen, after ion implantation, the solid line has a higher mobility, a lower threshold voltage and a higher subthreshold swing in the semiconductor material than the dashed line. The output electrical characteristics of the metal oxide semiconductor pattern subjected to ion implantation are superior to those before ion implantation.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (4)
1. A method of making a metal oxide semiconductor sensor comprising the steps of:
sequentially forming a gate electrode and a gate insulating layer on a substrate;
forming an active island on the gate insulating layer, the active island including a source electrode, a drain electrode, and a metal oxide semiconductor pattern subjected to ion implantation;
Forming a film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride on the gate insulating layer on which the active island is formed as the protective layer composed of a piezoelectric material or a photosensitive material;
forming an active island on the gate insulating layer, specifically including:
forming a first metal oxide semiconductor pattern on the gate insulating layer;
F-series gas is processed into F-containing free radical plasma through a dry etching process, F ion implantation is carried out on the first metal oxide semiconductor pattern by using the F-containing free radical plasma, so that the ion implanted metal oxide semiconductor pattern is formed, wherein the gas flow of the F-series gas introduced into equipment of the dry etching process is 300 sccm-700 sccm, the pressure of the gas is 0.2 Mpa-0.5 Mpa, and the power of the equipment of the dry etching process is 15 kW-30 kW;
Forming a source electrode and a drain electrode on the gate insulating layer on which the ion-implanted metal oxide semiconductor pattern is formed;
The forming a film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride on the gate insulating layer formed with the active island specifically comprises:
Dissolving alpha-polyvinylidene fluoride into a solvent of N, N-dimethylformamide to form alpha-polyvinylidene fluoride solution;
And coating the alpha-type polyvinylidene fluoride solution on the gate insulating layer formed with the active island to form a second device, and applying a shearing force to the alpha-type polyvinylidene fluoride solution coated on the gate insulating layer to enable a friction device with high shearing force to rapidly rub the surface of the second device to form a film layer of the beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride, wherein the shearing force ranges from 20Mpa to 60Mpa, and the application speed of the shearing force ranges from 0.5m/s to 3m/s.
2. The method for manufacturing a metal oxide semiconductor sensor according to claim 1, wherein,
Coating the alpha polyvinylidene fluoride solution on the gate insulating layer formed with the active island, specifically comprising:
spin-coating the α -polyvinylidene fluoride solution onto the gate insulating layer on which the active islands are formed; or alternatively
The substrate on which the gate electrode, the gate insulating layer and the active island are formed is encapsulated in the alpha polyvinylidene fluoride solution.
3. A metal oxide semiconductor sensor fabricated by the method of manufacturing a metal oxide semiconductor sensor according to claim 1 or 2, comprising:
A substrate base;
a gate electrode formed on the substrate base plate;
A gate insulating layer formed on the substrate base plate and covering the gate electrode;
An active island formed on the gate insulating layer and corresponding to a position of the gate electrode, the active island including a source electrode, a drain electrode, and an ion-implanted metal oxide semiconductor pattern;
and a protective layer formed on the gate insulating layer provided with the active island.
4. A metal oxide semiconductor sensor according to claim 3, wherein,
The protective layer is a film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride.
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