CN112768328A - High-current high-voltage vacuum diode - Google Patents

High-current high-voltage vacuum diode Download PDF

Info

Publication number
CN112768328A
CN112768328A CN202110110840.3A CN202110110840A CN112768328A CN 112768328 A CN112768328 A CN 112768328A CN 202110110840 A CN202110110840 A CN 202110110840A CN 112768328 A CN112768328 A CN 112768328A
Authority
CN
China
Prior art keywords
insulator
cathode
anode
diameter
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202110110840.3A
Other languages
Chinese (zh)
Other versions
CN112768328B (en
Inventor
杨建华
陈绒
程新兵
文建春
周相
钱宝良
耿玖源
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National University of Defense Technology
Original Assignee
National University of Defense Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National University of Defense Technology filed Critical National University of Defense Technology
Priority to CN202110110840.3A priority Critical patent/CN112768328B/en
Publication of CN112768328A publication Critical patent/CN112768328A/en
Application granted granted Critical
Publication of CN112768328B publication Critical patent/CN112768328B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J19/00Details of vacuum tubes of the types covered by group H01J21/00
    • H01J19/42Mounting, supporting, spacing, or insulating of electrodes or of electrode assemblies
    • H01J19/44Insulation between electrodes or supports within the vacuum space
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J19/00Details of vacuum tubes of the types covered by group H01J21/00
    • H01J19/54Vessels; Containers; Shields associated therewith
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J21/00Vacuum tubes
    • H01J21/02Tubes with a single discharge path
    • H01J21/04Tubes with a single discharge path without control means, i.e. diodes

Landscapes

  • Electron Sources, Ion Sources (AREA)

Abstract

The invention discloses a high-current high-voltage vacuum diode, and aims to solve the problem that a vacuum diode insulator is easy to generate surface flashover. The invention is composed of an insulator, an anode, a cathode, a shielding ring, a flange and a sealing ring, wherein the cathode, the shielding ring, the insulator and the anode are coaxially nested from inside to outside, the outer edge of the insulator is tightly pressed on the inner wall of the anode through the flange and the sealing ring, and the shielding ring is screwed at the right end of the cathode; the anode is grounded, the side surface is provided with an air hole, and the air hole is externally connected with a vacuum unit. The insulator is a long conical hollow structure, a medium area of the high-power pulse driving source is isolated from a vacuum area in the anode cylinder, and a cathode is inserted into the hollow part of the insulator. The shielding ring is a disc-shaped metal structure with a round tube and consists of the round tube, the disc and the cylinder, and the shielding ring can block a part of electron beams flowing back along magnetic lines of force to prevent the electron beams from bombarding the surface of the insulator. The invention solves the problems that the vacuum diode insulator is easy to generate surface flashover, and the electron beam guided by the magnetic field is easy to reflux along the magnetic force line to bombard the cathode.

Description

High-current high-voltage vacuum diode
Technical Field
The invention relates to a high-current vacuum diode, in particular to a high-current high-voltage vacuum diode with a radial insulation structure, and belongs to the field of pulse power.
Background
The pulse power technology is a new emerging scientific technology developed due to the national defense scientific research needs. In recent 40 years, with the development and improvement of various types of high current electron beam accelerators, the pulse power technology has been rapidly developed and becomes one of the most active high technologies in the world. At present, a high-current electron beam accelerator can generate electron beam current with the magnitude of several mega electron volts and several dozen mega amperes in a short time (dozens to hundreds of nanoseconds), and the application of the high-current electron beam accelerator in the fields of national defense scientific research, high and new technology research, civil industry and the like is more and more prominent.
In a high current electron beam accelerator, a vacuum diode is a component for converting high voltage pulses generated by a formation line into a high current electron beam, and is an important component of a high power pulse driving source. The formed line energy storage must be fed into the vacuum diode through an insulator of a solid medium to isolate an insulating medium area in the pulse driving source from a vacuum area of the diode.
The design of the vacuum insulator is one of the keys of the design of the high-current vacuum diode, and the good design of the diode insulation structure can greatly improve the voltage withstanding level of the vacuum diode. Insulation of a vacuum interface, which basically comprises two typical structures of axial and radial, namely, a billow, a heavy current diode insulation structure design and a vacuum [ D ], a Changsha, national defense science and technology university, 2006 ], as shown in figure 1, wherein figure 1a is a typical structure schematic diagram of an axial insulation vacuum diode, the vacuum diode is composed of a cathode 3, an anode 2, an insulator 1 and m (m is a positive integer) metal equalizing rings 7, the insulator 1 and the m metal equalizing rings 7 are overlapped along the axial direction of the diode, and the insulator 1 and the vacuum interface have a certain inclination angle, so that electrons can be impacted on the surface of the insulator 1 as little as possible; parasitic capacitance between the metal grading rings 7 can play a role in grading, and no potential difference exists between the parts of the metal grading rings 7. The axial insulated vacuum diode can easily meet the requirement of voltage sharing, is generally applicable to various voltages, but has a complex structure, and can cause the diode to have longer length, larger volume and larger inductance.
Fig. 1b is a schematic diagram of a typical structure of a radial insulated vacuum diode, the radial insulated vacuum diode is composed of an insulator 1, an anode 2 and a cathode 3, unlike the vacuum diode with an axial insulated structure, the insulator 1 of the diode with the radial insulated structure is supported along the radial direction of the diode to isolate the insulating medium area in the pulse driving source from the vacuum area of the diode, compared with the axial insulated structure shown in fig. 1a, the radial insulated vacuum diode has a simple and miniaturized structure, but is limited by vacuum surface flashover, and the pressure resistance of the radial insulated vacuum diode is lower than that of the vacuum diode with the axial insulated structure.
For a radial insulated vacuum diode, a vacuum interface is a limiting factor for high-power beam to pass through, the withstand voltage of the diode is improved, and the key point is to avoid vacuum surface flashover discharge. Since the vacuum surface breakdown field strength of the insulator 1 is often lower than that of a vacuum gap and insulator breakdown strength with the same size, the insulator-vacuum-cathode interface (i.e. at the three junction 200 in fig. 1 b) is prone to surface flashover, which results in reduced withstand voltage and shortened service life of the vacuum diode. Under the trend that a high-power microwave system is gradually developed towards high power, compactness and miniaturization, the voltage resistance of the high-power microwave system cannot be improved by simply increasing the size of an insulator, and the good diode structure design can avoid surface flashover to a great extent and improve the voltage resistance level of a vacuum diode.
The creeping flashover in the vacuum diode refers to the discharge of an insulator-vacuum-cathode interface, and the reason for the occurrence of the creeping flashover is generally explained by adopting a Secondary Electron Emission Avalanche (SEEA) theory:
1. the initial stage is as follows: when high voltage is applied to the cathode of the diode, field enhancement locally occurs in an insulator-vacuum-cathode junction region (cathode triple junction region), so that field emission is caused, and primary electrons are generated;
2. and (3) a development stage: the emitted electrons are accelerated under the action of an electric field, acquire energy and impact the surface of an insulator, and secondary electrons are generated with a certain probability. After secondary electrons escape, positive charges are left on the surface of the insulator, the electric field of the region is enhanced, more electrons are attracted to impact the surface, and the process is continuously carried out to cause secondary electron avalanche;
meanwhile, the continuous impact of the electrons on the surface of the insulator enables gas molecules adsorbed on the surface of the insulator to obtain energy to be desorbed and ionized, and a desorption gas layer is formed on the surface of the insulator and moves to the anode along with the electron avalanche;
3. flashover breakdown: along with the movement of electron emission avalanche and desorbed gas to the anode, the processes of secondary electron emission and gas molecule desorption and ionization are further aggravated, and finally a penetrating gas conducting channel is formed on the surface of the insulator to generate surface flashover.
Another cause of the creeping flashover is electron beam backflow; fig. 2 is a schematic block diagram of a working scenario of a vacuum diode, as shown in fig. 2, in a high power microwave system, a high current high voltage vacuum diode is connected to a high power pulse driving source and a microwave source, an output waveform of the high power pulse driving source is a high voltage pulse signal, which is fed into the high current high voltage vacuum diode, so that a high density and high speed electron beam generated by the high current high voltage vacuum diode acts in the microwave source to generate high power microwaves, in order to control transmission and expansion of the electron beam, a strong magnetic field is generally required to guide the electron beam in the microwave source (referred to as a guiding magnetic field), because of the guiding magnetic field existing in the microwave source and the existence of a radial electric field between the anode and the cathode in the high current high voltage vacuum diode, the electron beam is likely to transmit in a reverse direction of a predetermined direction, and generate electron beam reflux, when more reflux electrons, and desorbing the gas on the surface layer of the insulator to initiate surface flashover.
Disclosure of Invention
The invention aims to solve the technical problems that a vacuum diode insulator in a high-current electron beam accelerator is easy to generate surface flashover, and an electron beam guided by a magnetic field is easy to reflux along magnetic lines to bombard a cathode, so that the withstand voltage of the vacuum diode is reduced, the service life of the vacuum diode is shortened, and the like.
The technical scheme is as follows:
a high-current high-voltage vacuum diode comprises an insulator, an anode, a cathode, a shielding ring, a flange and a sealing ring, wherein the cathode, the shielding ring, the insulator and the anode are coaxially nested from inside to outside, the outer edge of the insulator is tightly pressed on the inner wall of the anode through the flange and the sealing ring, and the cathode penetrates through the hollow part of the insulator and is connected with a preceding-stage high-power pulse driving source. The end of the microwave source is connected with the microwave source. The shielding ring is screwed at the right end of the cathode through a metal screw; the anode is grounded, the side surface is provided with an air hole, and the air hole is externally connected with a vacuum unit.
The anode is a cylindrical metal cylinder, the inside of the cylinder is a vacuum area, and the outer radius of the anode is RoInner radius of RiLength is L1The side surface of the anode is provided with N (N is a positive integer) air holes with the diameter of Dg(ii) a The air holes are externally connected with N groups of vacuum units (N is a positive integer and is more than or equal to 1 and less than or equal to N) through the corrugated pipe, the vacuum degree in the anode cylinder is maintained, and the vacuum degree in the anode cylinder of the high-current vacuum diode is less than 10 through the adjustment of the number N of the air holes and the number N of the vacuum units-3Pa, the strong current electron beam emitted by the vacuum diode meets the requirement of the microwave source. The flange is used for connecting the outer wall of the preceding-stage high-power pulse driving source and tightly pressing the insulator on the inner wall of the anode, and the inner radius of the flange is riOuter radius of ro(ro>ri>Ro>RiAnd 10mm<ro-Ro<30mm,5mm<ri-Ri<20mm)。
The insulator is in a long conical hollow structure, plays a role in supporting the cathode, simultaneously isolates a medium area of a high-power pulse driving source from a vacuum area in the anode cylinder, and adopts an electric insulating materialThe electric insulating material can be any one of nylon, alumina ceramics, organic glass, polytetrafluoroethylene, ultra-high molecular weight polyethylene, cross-linked polystyrene and the like; the outer edge of the left end of the insulator is tightly pressed on the inner wall of the left end of the anode through a flange and a sealing ring, and shares a central axis (OO') with the anode; the insulator is a conical body with thick left end and thin right end and has a length of L2(L2<L1) The diameter of the left end face is D1(D1=2ri) Right end face diameter of D2(ii) a The surface of the insulator mainly has two angles with the horizontal direction, the left side angle is beta, and the axial length corresponding to the beta angle is LβRight side angle is alpha (alpha)<Beta), alpha angle corresponds to an axial length Lα,LβAnd LαA smooth transition section is arranged between the two sections, and the axial length of the smooth transition section is Lt(Lα+Lβ+Lt=L2). A round table and a cylinder are sequentially controlled from left to right along the OO' direction at the center of the insulator, and the diameter of the cylinder is D3Length is L3(ii) a The diameter of the left end surface of the circular truncated cone is D5Right end face diameter of D4(D1>D5>D2>D4>D3) Length is L2-L3(L3<L2<L1And L is2<2L3) (ii) a The hollow part of the insulator is inserted with a cathode. Rounding all sharp parts of the insulator;
the cathode is a cylindrical metal rod with the diameter D3Length of L4A cylindrical part hollowed out of the insulator, the length of the cathode embedded in the insulator being L3(L3<L4<L2<L1) (ii) a The cathode and the insulator share a central axis (OO'). The cathode is connected with the high-power pulse driving source through the left end and receives a high-voltage pulse signal output by the high-power pulse driving source; the right end of the cathode is provided with a threaded hole, and a round hole with the diameter of d and the length of l is dug in the center of the right end of the cathode so as to lock the shielding ring; in order to save materials and reduce weight, the cathode can be hollowed, but the two ends of the cathode are left with end faces, so that the cathode still looks like a closed shape. Inner hollowed out rear wall thicknessIs th1(th1Can be determined according to the voltage and current environment of the diode, and is generally 3-10 mm); the thickness of the left end face of the cathode is th2(general th)2Is slightly larger than th1) (ii) a The right end face of the cathode needs to be locked with a shielding ring, and the thickness of the right end face of the cathode is th3(th3>th2>th1) And th3Slightly greater than the depth of the threaded hole on the cathode, and the length of the round hole is l to satisfy l<th3
The shielding ring is a disc-shaped metal structure with a round tube at the edge and consists of a round tube, a disc and a cylinder. The pipe welding is at the lateral wall of disc, the right flank and the disc right-hand member face parallel and level of pipe, and the drum welding is at the left end face of disc, with the disc centre of a circle. The shielding ring is locked at the right end of the cathode through a screw and shares a central axis (OO') with the cathode; a through hole is dug in the center of the disc, and the outer diameter of the disc is D6Inner diameter of D7The outside diameter of the cylinder is equal to D and the inside diameter is equal to D7(D7<D, with D1>D6>D5>D2>D4>D3>d>D7) (ii) a The distance r between the disc and the central point A (d)<2r<D3) And a circle of threaded holes are uniformly distributed along the circumferential direction, and the shielding ring is fixed on the cathode through the threaded holes by screws. The length of the cylinder is l ', l ' is less than or equal to l (if the cathode is hollowed out, l ' is less than or equal to l)<th3) The cylinder is inserted into a round hole on the right end face of the cathode, and the left end face of the disc is flush with the right end face of the cathode; thickness of the disc th5The outer diameter of the circular tube is h, and the thickness of the circular tube wall is th4(h>th5≥th4And D is5<D6+2h<D1) So that the inside of the left end of the circular tube is provided with h-th5The hollow space of (2). Geometric parameters of the shielding ring can be optimized according to the magnetic field configuration of the microwave source, so that the shielding ring can block a part of electron beams flowing back along the magnetic force lines, and the phenomenon that the electron beams bombard the surface of the insulator to cause surface flashover is avoided.
Two necessary conditions of the surface flashover are summarized according to the process of the surface flashover occurrence: the generation of initial electrons and the large amount of desorbed gas. In order to reduce the occurrence probability of the insulation flashover phenomenon, the strong current vacuum diode is designed according to the following principle from the condition of insulation flashover: firstly, the electric field enhancement effect at the cathode three-binding point 200 is inhibited as much as possible, so that the electric field is uniformly distributed, the generated initial electrons are less, and the generation of surface flashover is inhibited from the source; the shielding ring can shield the field at the three-joint point 200 very weakly, and the insulator is of a long conical hollow structure, so that the creepage distance (which means the shortest path between two conductive parts or between a conductive part and an equipment protection interface measured along an insulating surface) can be increased, and the electric field distribution is adjusted to reduce the surface field intensity. Secondly, electrons move as far as possible without bombarding the surface of the insulator, so that the secondary electron emission probability and the surface charge quantity are reduced, the generated desorption gas quantity is less, and the formation of a gas channel necessary for surface flashover breakdown is inhibited; the shielding ring can block a part of electron beams which flow back along magnetic force lines under the guidance of a magnetic field, so that the electrons do not bombard the surface of the insulator as much as possible. Finally, the cathode voltage is uniformly reduced along the surface of the insulator, the surface component of the electric field is as uniform as possible, and the local high field intensity is avoided; the shielding ring can adjust the distribution of power lines, concentrate an electric field at the end part of the shielding ring, and shield the field at the three-joint 200 very weakly, so that the electric field distribution on the surface of the insulator is more uniform, and the voltage uniformly drops along the surface of the insulator 1.
By analyzing the flashover mechanism along the surface and the influence factors thereof, the general design principle of the radial insulation vacuum diode can be summarized:
the first principle is as follows: strictly controlling the field intensity of the region of the triple junction 200 to be below an allowable value;
the second principle is as follows: the shielding ring can block most of electron beams which flow back along the magnetic force lines, so that electrons are prevented from bombarding the surface of the insulator 1;
the third principle is as follows: the maximum field intensity of the surface electric field of the insulator is reduced, and the electric field is distributed as uniformly as possible in the surface direction of the insulator.
At present, the insulation design of the vacuum interface has only qualitative criteria and lacks quantitative indexes. The estimation of reliability is mainly based on electrostatic field calculation results and is evaluated by an empirical formula. The field strength requirements (international system of units) of each part are given by the following formula:
Figure BDA0002919295660000051
wherein t is the pulse width at which the voltage peak is 0.89 times; a is the area of the edge surface of the insulator; eRThe component of the electric field parallel to the edge surface of the insulator is also called the edge surface field intensity; eCTJThe average field strength in the region of the triple junction 200. According to the second expression in the expression (1), the mean field intensity E of the region of the triple junction 200 under the International System of unitsCTJRequirement 4.5X 106V/m, converted to the customary unit kV/cm, i.e. requiring a field strength E at the triple junction point 200CTJShould be less than 45 kV/cm. To increase reliability, the design typically requires a field strength E at the triple junction 200CTJLess than 30 kV/cm. Based on the above analysis, the design of the present invention focuses on the relevant structural parameters of the insulator 1 and the shield ring 4.
For convenience of description, the conditions satisfied by the structural parameters of the above design are uniformly described here:
1. when in specific application, the outer radius of the anode is RoEqual to the outer radius of the outer cylinder of the high-power pulse driving source 100 and the inner radius R of the anodeiEqual to the inner radius of the outer cylinder of the high-power pulse driving source and the diameter D of the cathode3The diameter of an output rod of the high-power pulse driving source is equal to that of the output rod of the high-power pulse driving source, so that coaxial transmission of voltage waves is maintained; diameter D of the air holegThe diameter of the corrugated pipe is equal to that of a standard corrugated pipe;
2. when the inner radius R of the anodeiOuter radius RoAfter determination, according to the constraint relation ro>ri>Ro>RiAnd 10mm<ro-Ro<30mm,5mm<ri-Ri<20mm, the parameter r can be roughly determinedi,roTaking the value of (A); to define the maximum operating voltage U of the invention0Approximately determine the parameter th1,th2,th3,th4,th5In combination with the diameter D of the cathode3By constraining the relation 2ri=D1>D6>D5>D2>D4>D3>2r>d>D7、l'≤l<th3And h>th5≥th4,D5<D6+2h<D1Roughly determining the parameter D6、D5、D2、D4、D7The value ranges of r, D, l', l and h and the parameter D1A specific value of (a);
3. for the shielding ring, the shielding ring is required to block most of the electron beams flowing back along the magnetic lines; the main parameters optimized for the shield ring are centered on the outer diameter D of the disk6And the outer diameter H of the circular tube, the outer diameter D of the disc being determined approximately given the magnitude H of the microwave source and its guiding field6And calculating the given guidance magnetic field H by Pioson Superfish electromagnetic simulation software (the version requires 7.1 or more) after the value range of the outer diameter H of the circular tube is obtained, and requiring that an electronic beam line (the electronic beam line refers to a moving track line of an electron beam in a microwave source flowing back along the guidance magnetic field) can pass through a shielding ring, thereby obtaining a group D6And the exact value of h;
4. for insulators, the maximum field strength along the surface is required to be less than E according to the analysisRAnd the electric field is required to be distributed as uniformly as possible in the direction of the insulator along the surface, and the main parameters for optimizing the insulator are concentrated on the diameter D of the right end surface2Left side angle beta, axial length L corresponding to beta angleβRight side angle alpha and axial length L corresponding to alpha angleαAnd length L of transition segmentt(ii) a At the right end face of the insulator2After the value range is obtained, the diameter D of the left end face of the insulator is combined1Given the maximum operating voltage U of the invention0The electromagnetic simulation software CST Studio Suite (version requirement 2010 and above) can be used for calculating the E electrostatic fieldCTJAnd insulator surface electric field distribution, calculating to obtain a plurality of groups of D satisfying the first principle) and the third principle2、β、Lβ、α、Lα、LtAccording to the constraint condition Lα+Lβ+Lt=L2Obtained ifStem group L2A specific value of (a); and then according to the obtained insulator parameter group D2、β、Lβ、α、Lα、LtCalculating the area A of the edge surface of the insulator, and calculating the field intensity E of the edge surface of the insulator according to the formula (1)RTaking the minimum insulator length L satisfying the second principle2Corresponding parameter D2、β、Lβ、α、Lα、LtValue of (D) as2、β、Lβ、α、Lα、LtThe exact value of (d);
5. at the minimum insulator length L2After a particular value of (2), other parameters such as L1、L3、L4Can be defined by a constraint L3<L4<L2<L1And L2<2L3Determining approximate value range, finally calculating the electric field intensity of each point of the invention by using an electrostatic field of CST Studio Suite of electromagnetic simulation software, and comprehensively considering to obtain L1、L3、L4The final exact value.
The invention can achieve the following beneficial effects:
1. the insulator with the long conical hollow structure plays a role in supporting the cathode and isolating the insulating medium region and the diode vacuum region in the pulse driving source, the creepage distance is increased due to the fact that the insulator is large in surface distance, and the electric field distribution can be adjusted to reduce the surface field intensity;
2. the shielding ring is disc-shaped, so that the field at the three joint points can be shielded very weakly, and the electric field distribution on the surface of the insulator is more uniform, so that the insulator can bear high voltage and avoid surface flashover;
3. in addition, the shielding ring has the functions of adjusting the distribution of power lines, reducing the radial component of an electric field at the position, blocking a part of electron beams which flow back along the magnetic force lines under the guidance of a magnetic field, enabling electrons not to bombard the surface of the insulator as much as possible and inhibiting the influence of the electron flow back on the flashover along the surface of the insulator to a certain extent.
Drawings
Fig. 1 is a schematic structural view of a vacuum diode with two typical insulation modes in the background art, wherein fig. 1a is a schematic structural view of a vacuum diode with an axial insulation structure, and fig. 1b is a schematic structural view of a vacuum diode with a radial insulation structure;
FIG. 2 is a schematic block diagram of a working scene of a vacuum diode in the background art;
FIG. 3 is a cross-sectional view of the present invention taken along a plane in which the central axis OO' lies;
FIG. 4 is a schematic structural view of an insulator according to the present invention; FIG. 4a is a three-dimensional structural view of an insulator; fig. 4b is a cross-sectional view of the insulator of fig. 4a taken along a plane in which the central axis OO' lies;
FIG. 5 is a cross-sectional view of a cathode of the present invention taken along a plane in which the central axis OO' lies;
FIG. 6 is a schematic view of the shield ring of the present invention; FIG. 6a is a perspective view of a shield ring; FIG. 6b is a front view of the shield ring; FIG. 6c is a cross-sectional view of the shield ring taken along a plane in which the central axis OO' lies;
FIG. 7 shows the maximum operating voltage U of the vacuum diode according to an embodiment of the present invention0A typical electric field vector profile at a voltage of 700 kV.
Fig. 8 is a diagram of a working scenario when a microwave source (guidance field size H is 0.6T) is connected to the right end of an embodiment of the present invention;
FIG. 9 is a magnetic field line distribution diagram of the region S near the shield ring in FIG. 8;
FIG. 10 shows U in an embodiment of the present invention0Under the condition of 700kV voltage, the field intensity distribution curve of the insulator along the surface is obtained.
Detailed Description
The invention will be further described with reference to the accompanying drawings.
As shown in fig. 3, the present invention is composed of an insulator 1, an anode 2, a cathode 3, a shielding ring 4, a flange 5 and a sealing ring 6, wherein the cathode 3, the shielding ring 4, the insulator 1 and the anode 2 are coaxially nested from inside to outside, the outer edge of the insulator 1 is tightly pressed on the inner wall of the anode 2 through the flange 5 and the sealing ring 6, and the cathode 3 passes through the hollow part of the insulator 1 and is connected with a preceding-stage high-power pulse driving source 100. The end of the present invention connected to the high power pulse driving source 100 is defined as the left end, and the end of the present invention connected to the microwave source 102 is defined as the right end. The shielding ring 4 is screwed at the right end of the cathode 3 through a metal screw; the anode 2 is connected to the ground,the side surface is provided with an air hole 101, and the air hole 101 is externally connected with a vacuum unit. The anode 2 is a cylindrical metal cylinder, a vacuum area is arranged in the cylinder, and the outer radius of the anode 2 is RoInner radius of RiLength is L1The side surface of the anode 2 is provided with N (N is a positive integer) air holes 101, and the diameter of the air holes 101 is Dg(ii) a The air holes 101 are externally connected with N groups of vacuum units (N is a positive integer and is more than or equal to 1 and less than or equal to N) through the corrugated pipe, the vacuum degree in the anode 2 cylinder is maintained, and the vacuum degree in the anode 2 cylinder of the high-current vacuum diode is less than 10 through the adjustment of the number N of the air holes 101 and the number N of the vacuum units-3Pa, the strong current electron beam emitted by the vacuum diode meets the requirement of the microwave source 102. The flange 5 is used for connecting the outer wall of the preceding-stage high-power pulse driving source and tightly pressing the insulator 1 on the inner wall of the anode 2, and the inner radius of the flange 5 is riOuter radius of ro(ro>ri>Ro>RiAnd 10mm<ro-Ro<30mm,5mm<ri-Ri<20 mm). As shown in fig. 4a, the insulator 1 is a long conical hollow structure, which supports the cathode 3, and simultaneously isolates the dielectric region of the high-power pulse driving source 100 from the vacuum region in the cylinder of the anode 2, and is made of an electrical insulating material, such as nylon, alumina ceramic, organic glass, polytetrafluoroethylene, ultra-high molecular polyethylene, cross-linked polystyrene, etc.; as shown in fig. 3, the outer edge of the left end of the insulator 1 is tightly pressed on the inner wall of the left end of the anode 2 through a flange 5 and a sealing ring 6, and shares a central axis (OO') with the anode 2; as shown in FIG. 4b, the insulator 1 is a tapered body with thick left end and thin right end, and has a length L2(L2<L1) The diameter of the left end face is D1(D1=2ri) Right end face diameter of D2. The surface of the insulator 1 mainly has two angles with the horizontal direction, the left side angle is beta, and the axial length corresponding to the beta angle is LβRight side angle is alpha (alpha)<Beta), alpha angle corresponds to an axial length Lα,LβAnd LαA smooth transition section is arranged between the two sections, and the axial length of the smooth transition section is Lt(Lα+Lβ+Lt=L2). The center of the insulator 1 is sequentially controlled to be away by one from left to right along the OO' directionA round table 1-1 and a cylinder 1-2, the diameter of the cylinder 1-2 is D3Length is L3(ii) a The diameter of the left end surface of the round table 1-1 is D5Right end face diameter of D4(D1>D5>D2>D4>D3) Length is L2-L3(L3<L2<L1And L is2<2L3) (ii) a The hollow portion of the insulator 1 is inserted with a cathode 3. All sharp parts of the insulator 1 are rounded.
As shown in fig. 5, the cathode 3 is a cylindrical metal rod with a diameter D3Length of L4The part of the cylinder 1-2 controlled out embedded in the insulator 1, the length of the part of the cathode 3 embedded in the insulator 1 is L3(L3<L4<L2<L1) (ii) a The cathode 3 and the insulator 1 share a central axis (OO'). The cathode 3 is connected with the high-power pulse driving source 100 through the left end and receives a high-voltage pulse signal output by the high-power pulse driving source 100; the right end of the cathode 3 is provided with a threaded hole 3-2, and the center of the right end of the cathode 3 is dug with a round hole 3-1 with the diameter d and the length l so as to lock the shielding ring 4; as shown in fig. 5, to save material and reduce weight, the cathode 3 may be hollowed out, but the two ends are closed. The thickness of the inner hollowed-out rear side wall is th1(th1Can be determined according to the voltage and current environment of the diode, and is generally 3-10 mm); the thickness of the left end face of the cathode 3 is th2(general th)2Is slightly larger than th1) (ii) a The thickness th of the right end face of the cathode 3 is determined by the need of locking the shielding ring 4 at the right end of the cathode 33(th3>th2>th1) And th3Is slightly larger than the depth of a threaded hole 3-2 on the cathode 3, and the length of the round hole 3-1 is l to satisfy l<th3
As shown in FIG. 6a, the shielding ring 4 is a disk-shaped metal structure with a circular tube 4-2 at the edge, and is composed of a circular tube 4-2, a disk 4-1 and a cylinder 4-3. The round tube 4-2 is welded on the side wall of the disc 4-1, the right side surface of the round tube 4-2 is flush with the right end surface of the disc 4-1, and the cylinder 4-3 is welded on the left end surface of the disc 4-1 and is concentric with the disc 4-1. The shield ring 4 is screwed to the right end face of the cathode 3 and has a center axis (OO ') common to the cathode 3') (ii) a As shown in FIG. 6b, a through hole 4-1-1 is dug in the center of the disk 4-1, and the outer diameter of the disk 4-1 is D6Inner diameter of D7The outside diameter of the cylinder 4-3 is equal to D and the inside diameter is equal to D7(D7<D, with D1>D6>D5>D2>D4>D3>d>D7) (ii) a Disk 4-1 is at a distance r from center point A (d)<2r<D3) A circle of threaded holes 4-1-2 are uniformly distributed along the circumferential direction, and the shielding ring 4 is fixed on the cathode 3 through the threaded holes 4-1-2 by screws. As shown in FIG. 6c, the length of the cylinder 4-3 is l ', l ' ≦ l (if the cathode is hollowed out, l ' ≦ l<th3) The cylinder 4-3 is inserted into a round hole 3-1 on the right end face of the cathode 3, and the left end face of the disc 4-1 is flush with the right end face of the cathode 3; the thickness of the disc 4-1 is th5The external diameter of the circular tube 4-2 is h, and the thickness of the circular tube 4-2 is th4(h>th5≥th4And D is5<D6+2h<D1) So that the inside of the left end of the round tube 4-2 is provided with h-th5The hollow space of (2). Geometric parameters of the shielding ring 4 can be optimized according to the magnetic field configuration of the microwave source, so that the shielding ring 4 can block a part of electron beams flowing back along the magnetic force lines, and the surface flashover caused by the bombardment of the electron beams on the surface of the insulator 1 is avoided.
A specific example is given below as example 1. The outer radius of the anode 2 is Ro238mm with an inner radius Ri233mm long and L1463mm, 2 air holes with diameter Dg150mm, the air holes 101 are externally connected with 2 groups of vacuum units through corrugated pipes, and the vacuum degree in the anode cavity is maintained; inner radius r of flange 5i247mm, outer radius ro261 mm; the insulator 1 is a conical body with thick left end and thin right end, plays a role of supporting the cathode 3, simultaneously isolates a medium area of the high-power pulse driving source 100 from a vacuum area in the anode 2 cavity, adopts a nylon material, and has a diameter D of the left end surface1494mm, diameter D of right end face2157mm, length L2300mm, the surface of the insulator 1 mainly has two angles with the horizontal direction, the left side angle is beta 46.95 degrees, and the axial length corresponding to the beta angle is Lβ58.5mm, right angleAt an angle α of 13.13 °, the axial length corresponding to the angle α is Lα75.36mm, the axial length of the smooth transition segment is Lt166.14 mm. A round table 1-1 and a cylinder 1-2 are sequentially controlled from left to right along the OO' direction at the center of the insulator 1, and the diameter of the cylinder 1-2 is D3100mm long and L3241 mm; the diameter of the left end surface of the round table 1-1 is D5232mm, and the diameter of the right end face is D4131mm long and L2-L359 mm; a cathode 3 is inserted into the hollow part of the insulator 1, and all sharp parts of the insulator 1 are rounded; the cathode 3 is a stainless steel cylinder with a diameter D3Length of L4285mm, the length of the part of the cylinder 1-2 embedded in the insulator 1 and the cathode 3 embedded in the insulator 1 is L3The cathode 3 is connected to the high power pulse driving source 100 at the left end of the insulator 1, and receives the high voltage pulse signal output by the high power pulse driving source 100. The cathode 3 is hollowed out with a side wall thickness th15 mm; the thickness of the left end face of the cathode 3 is th215mm, the thickness th of the right end of the cathode 33A round hole 3-1 with the diameter d of 50mm and the length l of 25mm is controlled on the right end face of the cathode 3; the shielding ring 4 consists of a circular tube 4-2, a disc 4-1 and a cylinder 4-3, and the shielding ring 4 is locked at the right end of the cathode 3 through a screw; a through hole 4-1-1 is dug at the center of the disc 4-1, and the outer diameter of the disc 4-1 is D6230mm, inner diameter D740mm, the outer diameter D of the cylinder 4-3 is 50mm and the inner diameter D7The length is l' 15mm which is 40mm, the cylinder 4-3 is inserted in a round hole 3-1 on the right end face of the cathode 3, and the left end face of the disc 4-1 is flush with the right end face of the cathode 3; a circle of threaded holes 4-1-2 are uniformly distributed on the disc 4-1 at a distance of 33mm from the central point Ar along the circumferential direction, and the shielding ring 4 is fixed at the right end of the cathode 3 through the threaded holes 4-1-2 by screws; the thickness of the disc 4-1 is th55mm, the outer diameter h of the round tube 4-2 is 50mm, and the thickness th44mm, so that a hollow space with the length of 45mm is arranged inside the left end of the round tube 4-2.
In order to verify the characteristics of the present invention, the electrostatic field analysis was performed on example 1 using the finite element analysis method, and FIG. 7 shows U in example 1 of the present invention0Typical electric field equipotential line distribution at 700kV voltage conditionIn the figure, the electric field intensity on the equipotential lines is equal, the electric field intensity change is larger at the denser equipotential lines, the electric field is mainly concentrated at the end part of the shielding ring 4 as can be seen from fig. 7, the electric field in the area near the insulator 1 is more uniform, the electrostatic field simulation calculation is carried out on the vacuum diode through CST Studio Suite electromagnetic simulation software, and the simulation result can directly know the electrostatic field simulation calculation at the feed-in voltage U0The electric field at the end of the shielding ring does not exceed 200kV/cm at 700kV, where electrons are emitted but are quickly collected by the anode 2 under the confinement of the guiding magnetic field; meanwhile, the electric field intensity at the three-joint point 200 is very small and is less than E according to simulation resultsCTJ=30kV/cm。
Fig. 8 is a diagram of a working scenario when the right end of the present invention is connected to the microwave source 102 (the magnitude of the guidance magnetic field 103 is H ═ 0.6T); the left side of the invention is connected with a high-power pulse driving source 100, and the high-power pulse driving source 100 feeds a high-voltage pulse signal into the invention; the invention is composed of an insulator 1, an anode 2, a cathode 3, a shielding ring 4, a corresponding flange 5 and a corresponding sealing ring 6; the right side of the invention is connected with a microwave source 102, a guiding magnetic field 103 for controlling the transmission and expansion of electron beams exists in the microwave source 102, the size of the magnetic field is H0.6T, according to the magnetic field configuration 103 of the guiding magnetic field, in combination with fig. 9 (fig. 9 is a magnetic force line distribution diagram of an area S near a shielding ring 4 in fig. 8), the backflow electrons in the microwave source 102 almost move leftwards along a magnetic force line (the third) is called an electron beam line), most of the backflow electrons are blocked by the shielding ring 4, therefore, the shielding ring 4 can block a part of the electron beams which flow backwards along the magnetic force line 103, and the electron beams are prevented from bombarding the surface of the insulator 1, which causes flashover along the surface.
FIG. 10 shows the operating voltage U of the high current vacuum diode0When the voltage is 700kV, the insulator 1 is along-plane electric field intensity distribution curve, in the figure, the abscissa is the coordinate L of the insulator 1 axially relative to the right end face thereof, the position where L is 0 is the right end face of the insulator 1, the increase of L indicates that the insulator increases from right to left relative to the axial coordinate of the right end face thereof, and the ordinate is the electric field intensity tangential to the surface of the insulator 1 at the position; example 1 required an electric pulse width of 170ns, and the effective insulation area of the insulator 1 on the vacuum side was calculated to be 2436cm2According to formula (1), absoluteThe electric field intensity of the edge 1 along the surface is less than ER86.6 kV/cm; as can be seen from FIG. 10, the field intensity of the insulator along the surface is less than 35kV/cm and much less than ERThe electric field intensity is larger and larger along with the increase of the relative coordinate L of the insulator, but as the external magnetic field is gradually weakened along with the increase of L, the backflow electrons are weakened along with the increase of L along the direction of the magnetic field, and thus the surface flashover of the insulator 1 can be effectively avoided.
It can be seen from fig. 7, 8, 9 and 10 that the insulator 1 and the shield ring 4 play three roles in embodiment 1:
1. the three binding points are shielded, and the electric field intensity of the three binding points is greatly reduced;
2. the equipotential lines are adjusted, so that the voltage drops more uniformly along the surface of the insulator 1;
3. the distribution of electric field lines is adjusted, the radial component of the electric field near the shielding ring 4 is reduced, a part of electron beams flowing back along the magnetic force lines are shielded, and the influence of the electron flowing back on the surface flashover of the insulator 1 is restrained to a certain extent.
The above description is only exemplary of the present invention and should not be taken as limiting the invention, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (12)

1. A high-current high-voltage vacuum diode comprises an insulator (1), an anode (2) and a cathode (3), and is characterized by further comprising a shielding ring (4), a flange (5) and a sealing ring (6); the cathode (3), the shielding ring (4), the insulator (1) and the anode (2) are coaxially nested from inside to outside, the outer edge of the insulator (1) is tightly pressed on the inner wall of the anode (2) through a flange (5) and a sealing ring (6), and the cathode (3) penetrates through the hollow part of the insulator (1) and is connected with a preceding-stage high-power pulse drive source (100); defining one end of the high-current high-voltage vacuum diode connected with the high-power pulse driving source (100) as a left end, and defining one end of the high-current high-voltage vacuum diode connected with the microwave source (102) as a right end; the shielding ring (4) is screwed at the right end of the cathode (3) through a metal screw; the anode (2) is grounded, the side surface is provided with an air hole (101), and the air hole (101) is externally connected with a vacuum unit;
the anode (2) is a cylindrical metal cylinder, a vacuum area is arranged in the cylinder, and the outer radius of the anode (2) is RoInner radius of RiLength is L1The side surface of the anode (2) is provided with N air holes (101), and the diameter of each air hole (101) is DgN is a positive integer; the air holes (101) are externally connected with N groups of vacuum units through corrugated pipes, N is more than or equal to 1 and less than or equal to N, and the vacuum degree in the anode (2) cylinder is maintained;
the flange (5) is connected with the outer wall of the preceding-stage high-power pulse driving source (100) and tightly presses the insulator (1) on the inner wall of the anode (2), and the inner radius of the flange (5) is riOuter radius of ro
The insulator (1) is a long conical hollow structure, plays a role in supporting the cathode (3), simultaneously isolates a medium area of the high-power pulse driving source (100) from a vacuum area in the anode (2) cylinder, and is prepared by adopting an electric insulating material; the outer edge of the left end of the insulator (1) is tightly pressed on the inner wall of the left end of the anode (2) through a flange (5) and a sealing ring (6) and shares a central axis OO' with the anode (2); the insulator (1) is a conical body with thick left end and thin right end and the length of L2,L2<L1The diameter of the left end face is D1,D1=2riRight end face diameter of D2(ii) a The surface of the insulator (1) has two angles with the horizontal direction, the left side angle is beta, and the axial length corresponding to the beta is LβRight side angle is alpha, alpha<Beta, alpha corresponds to an axial length Lα,LβAnd LαA smooth transition section is arranged between the two sections, and the axial length of the smooth transition section is Lt,Lα+Lβ+Lt=L2(ii) a The center of the insulator (1) is sequentially controlled to be provided with a round table (1-1) and a cylinder (1-2) from left to right along the OO' direction, and the diameter of the cylinder (1-2) is D3Length is L3(ii) a The diameter of the left end surface of the round table (1-1) is D5Right end face diameter of D4,D1>D5>D2>D4>D3The length of the round platform (1-1) is L2-L3And L is2<2L3(ii) a A cathode (3) is inserted into the hollow part of the insulator (1); rounding off all sharp parts of the insulator (1);
the cathode (3) is cylindricalMetal rod with diameter D3Length of L4The part of the cylindrical body (1-2) dug out and embedded in the insulator (1) and the length of the part of the cathode (3) embedded in the insulator (1) are L3,L3<L4<L2<L1(ii) a The cathode (3) and the insulator (1) share a central axis OO', and the cathode (3) is connected with the high-power pulse driving source (100) through the left end and receives a high-voltage pulse signal output by the high-power pulse driving source (100); the right end of the cathode (3) is provided with a threaded hole (3-2), and the center of the right end of the cathode (3) is dug with a round hole (3-1) with the diameter d and the length l so as to lock the shielding ring (4);
the shielding ring (4) is a disc-shaped metal structure with a round tube (4-2) at the edge and consists of the round tube (4-2), a disc (4-1) and a cylinder (4-3); the round pipe (4-2) is welded on the side wall of the disc (4-1), the right side face of the round pipe (4-2) is flush with the right end face of the disc (4-1), and the cylinder (4-3) is welded on the left end face of the disc (4-1) and is concentric with the disc (4-1); the shielding ring (4) is locked at the right end of the cathode (3) through a screw and shares a central axis OO' with the cathode (3); a through hole (4-1-1) is dug in the center of the disc (4-1), and the outer diameter of the disc (4-1) is D6,D1>D6>D5Inner diameter of D7The outside diameter of the cylinder (4-3) is equal to D and the inside diameter is equal to D7,D7<d; a circle of threaded holes (4-1-2) and d are uniformly distributed on the disc (4-1) at a distance r from the central point A along the circumferential direction<2r<D3The shielding ring (4) is fixed on the cathode (3) by screws through the threaded holes (4-1-2); the length of the cylinder (4-3) is l ', l' is less than or equal to l, the cylinder (4-3) is inserted into a round hole (3-1) on the right end face of the cathode (3), and the left end face of the disc (4-1) is flush with the right end face of the cathode (3); the thickness of the disc (4-1) is th5The outer diameter of the circular tube (4-2) is h, and the thickness of the circular tube (4-2) is th4,h>th5≥th4And D is5<D6+2h<D1So that the inside of the left end of the circular tube (4-2) is provided with h-th5The hollow space of (2).
2. The high-voltage vacuum diode of claim 1, wherein the number of the air holes (101) formed in the side surface of the anode (2) is N, and the number N of the external sets of vacuum units satisfies the requirement that the high-current electron beams emitted by the vacuum diode satisfy the requirement of the microwave source (102).
3. The high-voltage vacuum diode of claim 2, wherein the number of the air holes (101) formed on the side surface of the anode (2) is N, and the number of the external vacuum units N satisfies the requirement that the vacuum degree in the cylinder of the anode (2) of the high-voltage vacuum diode is less than 10-3Pa。
4. A high voltage vacuum diode according to claim 1, wherein the electrically insulating material of the insulator (1) is any one of nylon, alumina ceramic, plexiglass, teflon, ultra high molecular weight polyethylene, and cross-linked polystyrene.
5. A high current high voltage vacuum diode as claimed in claim 1, characterized in that said cathode (3) is hollowed out with end faces at both ends.
6. A high voltage high current vacuum diode as claimed in claim 5, characterized in that said cathode (3) has an internally hollowed out side wall thickness th1The voltage and current environment determination of the diode is carried out; thickness th of left end face of cathode (3)2Greater than th1Thickness th of right end face of cathode (3)3>th2And th3Is greater than the depth of the threaded hole (3-2) on the cathode (3), and the length l of the round hole (3-1) dug on the right end surface of the cathode (3) meets l<th3
7. A high voltage high current vacuum diode as claimed in claim 6 wherein th is said1Is 3-10 mm.
8. A high current high voltage vacuum diode as claimed in claim 1, characterized in that said anode (2) has an outer radius RoEqual to the outer radius of the outer cylinder of the high-power pulse driving source (100) and the inner radius R of the anode (2)iEqual to the inner radius of the outer cylinder of the high-power pulse driving source (100), a cathode (3)) Diameter D3The diameter of the output rod of the high-power pulse driving source (100) is equal to the diameter D of the air hole (101)gEqual to the diameter of the corrugated pipe; inner radius r of flange (5)iAnd an outer radius roSatisfy ro>ri>Ro>RiAnd 10mm<ro-Ro<30mm,5mm<ri-Ri<20 mm; given maximum operating voltage U0Determining a parameter th1,th2,th3,th4,th5By a constraint relation 2ri=D1>D6>D5>D2>D4>D3>2r>d>D7、l'≤l<th3And h>th5≥th4,D5<D6+2h<D1Determining a parameter D6、D5、D4、D2、D7The value ranges of r, D, l', l and h and the parameter D1Specific values of (a).
9. A high current high voltage vacuum diode as claimed in claim 8, characterized in that the outer diameter D of the disk (4-1) is determined6And after the value range of the outer diameter H of the circular tube (4-2), calculating the size H of the guiding magnetic field (103) by Piosson Superfish electromagnetic simulation software, and requiring the electron beam in the microwave source (102) to pass through the shielding ring (4) along the motion trajectory of the backflow of the guiding magnetic field so as to obtain D6And the exact value of h.
10. A high current high voltage vacuum diode according to claim 8, characterized in that the diameter D of the right end face of the insulator (1) is determined2After the value range is obtained, the diameter D of the left end face of the insulator (1) is combined1Given a maximum operating voltage U0E is calculated by an electrostatic field of CST Studio Suite of electromagnetic simulation softwareCTJAnd the insulator (1) is distributed along the surface electric field, and a plurality of groups of D meeting the first principle and the third principle are obtained by calculation2、β、Lβ、α、Lα、LtAccording to the constraint condition Lα+Lβ+Lt=L2To obtain a plurality of groups L2A specific value of (a); then according to the obtained insulator (1) parameter group D2、β、Lβ、α、Lα、LtCalculating the area A of the edge surface of the insulator, and calculating the field intensity E of the edge surface of the insulator 1 through a formula (1)RTaking the minimum insulator length L satisfying the second principle2Corresponding parameter D2、β、Lβ、α、Lα、LtValue of (D) as2、β、Lβ、α、Lα、LtThe exact value of (d); the first principle means that the field intensity of the area of the three binding points (200) is strictly controlled to be below an allowable value; the second principle is that the shielding ring (4) blocks most of electron beams flowing back along the magnetic force lines to avoid electrons from bombarding the surface of the insulator (1); the third principle is that the maximum field intensity of the surface electric field of the insulator (1) is reduced, and the electric field is uniformly distributed in the surface direction of the insulator (1); the formula (1) is:
Figure FDA0002919295650000031
wherein t is the pulse width at which the voltage peak is 0.89 times; a is the area of the edge surface of the insulator; eRThe component of the electric field parallel to the edge surface of the insulator is also called the edge surface field intensity; eCTJThe mean field strength in the region of the triple junction (200); the average field intensity E of the region of the triple junction (200) in the second expression of the expression (1) under the international system of unitsCTJIt is required to be less than 4.5X 106V/m, converted to conventional unit kV/cm, i.e. requiring field strength E in the region of three binding points 200CTJLess than 45 kV/cm.
11. A high current high voltage vacuum diode as claimed in claim 10, wherein E in formula (1) is selected to increase reliabilityCTJLess than 30 kV/cm.
12. A high current high voltage vacuum diode as claimed in claim 10 wherein a minimum insulator length L is obtained2After a specific value of (3), L1、L3、L4By a constraint L3<L4<L2<L1And L2<2L3Determining the value range, calculating the electric field intensity of each point of the high-voltage vacuum diode by the electrostatic field of the CST Studio Suite of the electromagnetic simulation software, and comprehensively considering to obtain L1、L3、L4The exact value of (c).
CN202110110840.3A 2021-01-27 2021-01-27 High-current high-voltage vacuum diode Active CN112768328B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110110840.3A CN112768328B (en) 2021-01-27 2021-01-27 High-current high-voltage vacuum diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110110840.3A CN112768328B (en) 2021-01-27 2021-01-27 High-current high-voltage vacuum diode

Publications (2)

Publication Number Publication Date
CN112768328A true CN112768328A (en) 2021-05-07
CN112768328B CN112768328B (en) 2022-05-03

Family

ID=75706110

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110110840.3A Active CN112768328B (en) 2021-01-27 2021-01-27 High-current high-voltage vacuum diode

Country Status (1)

Country Link
CN (1) CN112768328B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104900464A (en) * 2015-06-26 2015-09-09 中国工程物理研究院应用电子学研究所 Combined-type vacuum diode
CN111462959A (en) * 2020-04-15 2020-07-28 中国工程物理研究院应用电子学研究所 Vacuum high-voltage pulse insulation structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104900464A (en) * 2015-06-26 2015-09-09 中国工程物理研究院应用电子学研究所 Combined-type vacuum diode
CN111462959A (en) * 2020-04-15 2020-07-28 中国工程物理研究院应用电子学研究所 Vacuum high-voltage pulse insulation structure

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
伍友成等: "高功率二极管真空绝缘结构设计与实验", 《电力电子技术》 *
屈立辉等: "真空高压二极管的绝缘结构分析", 《高电压技术》 *
林惠祖: "真空高压二极管中电子回流的研究", 《电工材料》 *
荀涛: "强流二极管绝缘结构设计与保真空", 《国防科学技术大学》 *
荀涛等: "一种陶瓷径向绝缘强流二极管耐压结构设计", 《强激光与粒子束》 *
荀涛等: "基于陶瓷-金属焊接的强流二极管绝缘结构设计", 《高电压技术》 *
赵亮等: "强流电子束二极管绝缘子分析与设计", 《强激光与粒子束》 *

Also Published As

Publication number Publication date
CN112768328B (en) 2022-05-03

Similar Documents

Publication Publication Date Title
Mozgrin et al. High-current low-pressure quasi-stationary discharge in a magnetic field: Experimental research
Anderson et al. Mechanism of pulsed surface flashover involving electron‐stimulated desorption
Hosono et al. Surface charges on alumina in vacuum with varying surface roughness and electric field distribution
CN109786205B (en) Electron cyclotron resonance ion source
CN106057614B (en) A kind of cold-cathode Penning ion source
Morev et al. Electron-optical systems with planar field-emission cathode matrices for high-power microwave devices
Miller et al. Production of annular electron beams by foilless diodes
CN111462959B (en) Vacuum high-voltage pulse insulation structure
CN110985323A (en) Circular plate antenna crossed magnetic field microwave electron cyclotron resonance ion thruster
Kumar et al. Experimental investigation of a 1 kA/cm2 sheet beam plasma cathode electron gun
CN110600999B (en) Novel high-voltage large-current rotary arc switch
CN112768328B (en) High-current high-voltage vacuum diode
Xun et al. A high-vacuum high-electric-field pulsed power interface based on a ceramic insulator
Morozov et al. QSPA Kh-50 full-scale high-power asistationary plasma accelerator
CN113099601B (en) Low-energy heavy ion accelerator and acceleration method
US9089039B2 (en) Particle acceleration devices with improved geometries for vacuum-insulator-anode triple junctions
Purser et al. The University of Rochester MP tandem upgrading program
Dong et al. PIC-MCC investigation on the influences of gas medium and flashover on the multipacting cathode operation
Abhishek et al. Analysis of Dynamic Impedance for Different Phases of Pseudospark-Driven Electron Beam
Xun et al. A ceramic radial insulation structure for a relativistic electron beam vacuum diode
Louksha et al. A multistage depressed collector with azimuthal magnetic field for gyrotrons
Bugaev et al. Time-of-flight mass spectrometry studies of an ion beam generated by the titan source
CN109243727B (en) Coaxial high-current ceramic vacuum insulator based on surface non-uniform corrugation
RU2586993C1 (en) Centrifugal z-pinch
Leach et al. Suppression of leakage current in a relativistic magnetron using a novel cathode endcap design

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant