CN112768140A - Aluminum oxide protective silver nanowire transparent electrode and preparation method and application thereof - Google Patents
Aluminum oxide protective silver nanowire transparent electrode and preparation method and application thereof Download PDFInfo
- Publication number
- CN112768140A CN112768140A CN202011608047.8A CN202011608047A CN112768140A CN 112768140 A CN112768140 A CN 112768140A CN 202011608047 A CN202011608047 A CN 202011608047A CN 112768140 A CN112768140 A CN 112768140A
- Authority
- CN
- China
- Prior art keywords
- silver nanowire
- transparent electrode
- aluminum oxide
- nanowire transparent
- silver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0016—Apparatus or processes specially adapted for manufacturing conductors or cables for heat treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B17/00—Insulators or insulating bodies characterised by their form
- H01B17/56—Insulating bodies
- H01B17/62—Insulating-layers or insulating-films on metal bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
The invention discloses an aluminum oxide protective silver nanowire transparent electrode and a preparation method and application thereof. The method comprises the following steps: and taking the annealed silver nanowire transparent conductive film as a cathode, a platinum electrode as an anode, a silver | silver chloride electrode as a reference electrode, a solution containing aluminum nitrate nonahydrate as an electrolyte, electrodepositing an aluminum oxide protective layer on the silver nanowire transparent conductive film in a constant voltage mode of a three-electrode system, rinsing, and annealing to obtain the aluminum oxide protective silver nanowire transparent electrode. According to the invention, the reaction rate is controlled to improve the electrodeposition process, aluminum oxide is accurately deposited on the surfaces of the silver nanowires, the light-transmitting area is not influenced, the contact between the silver nanowires is promoted through the deposition process, the light absorption of a coating layer is avoided by the surface with high flatness, the improvement of the stability and the photoelectric property is realized, the preparation cost of the silver nanowire protection process and the flexible transparent electrode is greatly simplified, and the development of flexible electrons is promoted.
Description
Technical Field
The invention belongs to the technical field of flexible transparent electrode preparation, and particularly relates to an aluminum oxide protective silver nanowire transparent electrode and a preparation method and application thereof.
Background
In recent years, the development of a new display industry is rapid, the form of a display device is undergoing the development from flat panel display to fixed curved surface display and flexible display, and with the marketing of foldable mobile phones such as samsung Galaxy Z Flip and hua Mate Xs, the concept of flexible display starts to enter the mind of the public society, and a new round of development investment of flexible display is triggered. Flexible active organic light emitting diode display (AMOLED) is currently the most mature technology applied in flexible display, and is currently in the market growth stage. Among the components of the flexible display, the Transparent Conductive Film (TCF) plays an important role, and is an important component of the pixel driving electrode and the touch module. With the continuous development of the flexible industry, the defects of the fragile ITO, difficult low-temperature preparation, scarce resources and the like are increasingly obvious, and the novel flexible transparent conductive material represented by the silver nanowires begins to expose the corners completely. The small-size nanostructures give silver nanowires high permeability at low resistance, and excellent flexibility properties of the conductive network composed thereof. However, the specific surface area of the silver with the nano structure is far larger than that of a macroscopic material, so that the stability of the silver nanowire is seriously reduced due to high surface activity, and particularly, in practical application, the problems that the device fails due to local hot spot melting under high voltage and the like can be solved. To solve this problem, the most common method is to deposit a protective layer on the surface of the silver nanowires, for example, by sputtering, sol-gel method, etc., to form a whole layer of inert metal, conductive oxide or organic substance on the surface of the film, but this method cannot avoid causing shielding in the light-transmitting area of the silver-free nanowires, which affects the performance of the transparent conductive film. Aiming at the special structure of the silver nanowire conductive network, the electro-deposition method using a specific material can accurately deposit the protective layer material on the surface of the silver nanowire without influencing the light-transmitting area. However, the graphene protective layer reported at present cannot avoid the problems of high price, complex treatment process and the like of graphene, while materials such as zinc oxide and the like can seriously affect the conductivity of the silver nanowire, and meanwhile, due to the uneven surface appearance, the absorption of light can be increased, and the photoelectric performance is reduced. Therefore, a simple and low-cost silver nanowire protection method is urgently needed to be found, and the performance of the silver nanowires is not affected, so that the development of the flexible electronic industry is promoted.
Disclosure of Invention
In order to overcome the defects and shortcomings in the prior art, the invention mainly aims to provide a preparation method of an aluminum oxide protective silver nanowire transparent electrode.
The invention also aims to provide the aluminum oxide protective silver nanowire transparent electrode prepared by the method.
The invention further aims to provide application of the aluminum oxide protective silver nanowire transparent electrode.
The purpose of the invention is realized by the following technical scheme:
a preparation method of an aluminum oxide protective silver nanowire transparent electrode comprises the following steps:
(1) coating the silver nanowire solution on a substrate, and preparing a silver nanowire transparent conductive film after annealing treatment;
(2) taking a silver nanowire transparent conductive film as a cathode, a platinum electrode as an anode, a silver | silver chloride electrode as a reference electrode, a solution containing aluminum nitrate nonahydrate as an electrolyte, electrodepositing an aluminum oxide protective layer on the silver nanowire transparent conductive film in a three-electrode system constant voltage mode, washing, and annealing to obtain the aluminum oxide protective silver nanowire transparent electrode.
Preferably, the silver nanowires in the silver nanowire solution in the step (1) are prepared by a polyol method.
Preferably, the coating method in step (1) is at least one of spin coating, spray coating, suction filtration transfer printing and blade coating.
Preferably, the substrate in step (1) is a rigid or flexible substrate, the rigid substrate is at least one of glass and silicon chip, and the flexible substrate is at least one of PI, PET, PEN and PDMS.
Preferably, the annealing treatment in the step (1) is carried out at the temperature of 100-140 ℃ for 15-60 min.
Preferably, the concentration of the silver nanowire solution in the step (1) is 0.012-1.2 mg/mL, and the solvent is ethanol.
Preferably, aluminum nitrate nonahydrate (Al (NO) is contained in the electrolyte in the step (2)3)3·9(H2O)) is 1 to 5 mmol/L.
Preferably, the electrolyte in the step (2) contains 0.05 to 0.2mol/L potassium nitrate (KNO)3) (ii) a The solvent of the electrolyte is water.
Preferably, the volume of the electrolyte in the step (2) is determined by the area of the silver nanowire transparent conductive film and is 100-300 mL/cm2。
Preferably, the temperature of the electrodeposition in the step (2) is 65-85 ℃, the voltage is-2 to-0.5V, and the time is 15-60 min.
Preferably, the washing in the step (2) is deionized water rinsing, and the rinsing time is 10-30 s.
Preferably, the temperature of the annealing treatment in the step (2) is 80-180 ℃, and the time is 10-30 min.
Preferably, the thickness of the alumina protective layer in the step (2) is 10-40 nm.
The aluminum oxide protective layer before annealing in the step (2) contains crystal water, which affects the performance of the transparent electrode, and the crystal water can be removed by annealing treatment.
The alumina silver-protection nanowire transparent electrode prepared by the method.
The quality factor of the aluminum oxide protective silver nanowire transparent electrode is higher than that of the original silver nanowire transparent electrode, the aluminum oxide protective silver nanowire transparent electrode has high temperature resistance and high voltage resistance, and the microscopic lower surface is flat.
The application of the aluminum oxide protective silver nanowire transparent electrode is provided.
Compared with the prior art, the invention has the following advantages and beneficial effects:
1. compared with the common method for preparing the protective film, the electro-deposition aluminum oxide can accurately deposit the protective layer material on the surface of the silver nanowire without influencing a light-transmitting area, and the high-temperature resistance and high-voltage resistance of the silver nanowire conductive film are effectively improved.
2. The three-electrode system is used for electrodeposition in a constant voltage mode, and a stable and controllable environment is provided for the formation of the protective layer by adopting low-concentration electrolyte and prolonging the reaction time, so that the flatness of the surface of the deposition layer is kept, and the thickness of the deposition layer is accurately adjusted according to the requirement.
3. Compared with the existing graphene electrodeposition process, the alumina protection method greatly simplifies the preparation process and the production price.
4. Compared with oxides such as zinc oxide and the like, the aluminum oxide protective layer has a high-flatness surface and cannot generate extra absorption to light; and the contact interface of the silver nanowire and the aluminum oxide can form a quasi-two-dimensional electron transport channel, so that the conductive capability is promoted to a certain degree.
5. The deposition of the aluminum oxide layer can promote the contact of the silver nanowires, reduce the contact resistance and roughness of nodes and improve the quality factor of photoelectric performance.
6. The addition of the rinsing process reduces the residue of the electrolyte on the surface of the transparent electrode, and avoids the influence on the performance of the transparent electrode caused by precipitation during subsequent annealing.
Drawings
Fig. 1 is a constant voltage electrodeposition apparatus of a three-electrode system in the method of the present invention, wherein an electrolyte 1, a platinum counter electrode 2, a silver | silver chloride reference electrode 3, a silver nanowire working electrode 4, an electrolytic cell 5, and a constant voltage source 6.
Fig. 2 is an SEM image of a silver nanowire transparent electrode with 35min of alumina guard deposited in example 1.
Fig. 3 is a graph showing the voltage resistance of the transparent electrode in example 1 at different deposition times.
Fig. 4 is a graph showing the high temperature resistance of the transparent electrode in example 1 at different deposition times.
Fig. 5 is an SEM image of a silver nanowire transparent electrode with a 60min alumina guard deposited in example 2.
Fig. 6 is an SEM image of the alumina-protected silver nanowire transparent electrode prepared in example 3.
Fig. 7 is an SEM image of the alumina-protected silver nanowire transparent electrode prepared in example 4.
Fig. 8 is an SEM image of the silver nanowire transparent electrode protected by zinc oxide in comparative example 1.
Fig. 9 is a roughness profile curve of the surface of the silver nanowires of example 1 and comparative example 1.
Fig. 10 is an SEM image of the alumina silver nanowire transparent electrode prepared in comparative example 2.
Detailed Description
The present invention will be described in further detail with reference to examples and drawings, but the embodiments of the present invention are not limited thereto.
Those who do not specify specific conditions in the examples of the present invention follow conventional conditions or conditions recommended by the manufacturer. The raw materials, reagents and the like which are not indicated for manufacturers are all conventional products which can be obtained by commercial purchase.
In the preparation method of the silver nanowire in the embodiment of the present application, reference is made to patent CN109346242B "a transparent electrode based on silver nanowire and its preparation method" part of silver nanowire preparation in embodiment 1 (steps 1-2).
Example 1
Placing a glass sheet with the specification of 10mm multiplied by 10mm on a spin coater, and spin-coating silver nanowire ethanol suspension with the concentration of 1.2mg/mL on the glass sheet, wherein the specific spin-coating steps are as follows: adjusting the spin speed of the spin coater to be 450rpm, adding 20 mu L of silver nanowire ethanol suspension on a glass sheet in the process of low-speed spin, rotating at low speed for 10s, then rotating at high speed of 3000rpm for 30 s; repeating the spin coating steps of adding the silver nanowire ethanol suspension, rotating at low speed and rotating at high speed under the condition of 450rpm for 1 time, and placing the spin-coated glass sheet on a constant temperature platform to anneal at 110 ℃ for 30min to complete the preparation of the transparent electrode based on the silver nanowires.
Preparing 200mL of aqueous solution containing 2mmol/L of aluminum nitrate nonahydrate and 0.15mol/L of potassium nitrate as electrolyte, heating to 75 ℃, clamping the silver nanowire transparent electrode by using a platinum electrode as a cathode, using the platinum electrode as an anode, using a silver | silver chloride electrode as a reference electrode, immersing the silver nanowire transparent electrode into the electrolyte, applying-1.5V working voltage through a constant voltage source, and respectively electrodepositing for 15min, 25min, 35min and 45min to obtain the silver nanowire transparent electrode electrodeposited at different time. And (3) switching off a power supply, immersing the silver nanowire transparent electrode subjected to electrodeposition in normal-temperature deionized water in a stirring state, keeping for 20s, and then annealing for 15min at 150 ℃ on a hot bench to finish the preparation of the high-flatness silver nanowire transparent electrode protected by the aluminum oxide of the glass substrate.
SEM image of the high-flatness silver nanowire transparent electrode in which the alumina is deposited for 30min as shown in fig. 2, a high-flatness protective layer of about 22nm can be found on the surface of the silver nanowire.
Table 1 shows the photoelectric properties of the transparent electrode after different deposition times, and it can be seen that the quality factor (Figure of Merit) of the transparent electrode with the alumina protective layer is significantly improved compared to the transparent electrode without deposition treatment (deposition time 0 min). Fig. 3 and 4 show the voltage resistance and high temperature resistance of the transparent electrode after different deposition times, respectively, and it can be seen that the silver nanowire transparent electrode prepared by the method of the present invention shows obvious tolerance compared with the untreated transparent electrode, the tolerable voltage is doubled, and the tolerable temperature is increased by more than 100 ℃.
TABLE 1 photoelectric Properties of transparent electrodes at different deposition times
Example 2
Diluting 0.5mL of silver nanowire ethanol suspension with the concentration of 1.2mg/mL to 50mL, performing suction filtration by using a nylon filter membrane with the aperture of 10 μm, then placing flexible PI (specification of 10mm multiplied by 10mm) containing a glass back plate on the filter membrane, and starting an air pump to maintain for 1 min. And (3) placing the substrate which is subjected to suction filtration transfer on a constant temperature platform, and annealing at 110 ℃ for 30min to finish the preparation of the transparent electrode based on the silver nanowires.
Preparing 200mL of an aqueous solution of 2mmol/L aluminum nitrate nonahydrate and 0.15mol/L potassium nitrate as an electrolyte, heating to 75 ℃, clamping the silver nanowire transparent electrode by a platinum electrode as a cathode, taking the platinum electrode as an anode, taking a silver | silver chloride electrode as a reference electrode, immersing the silver nanowire transparent electrode in the electrolyte, applying-1.5V working voltage by a constant voltage source, and electrodepositing for 60 min. And (3) switching off a power supply, immersing the silver nanowire transparent electrode subjected to electrodeposition in normal-temperature deionized water in a stirring state, keeping for 30s, then annealing for 15min at 150 ℃ on a hot bench, and stripping PI from the bottom plate to finish the preparation of the aluminum oxide protective high-flatness silver nanowire transparent electrode on the flexible substrate. FIG. 5 is an SEM image of the transparent electrode, wherein the surface of the silver nanowire starts to be roughened after 60min of deposition, but the relatively flat morphology is still maintained, the transmittance of the transparent electrode is 85.02%, and the sheet resistance is 14.8 Ω · sq-1The quality factor was 13.3.
Example 3
Preparing a silver nanowire-based transparent electrode by using the same method as that of the embodiment 1, preparing 200mL of aqueous solution containing 1mmol/L of aluminum nitrate nonahydrate and 0.15mol/L of potassium nitrate as electrolyte, heating to 75 ℃, clamping the silver nanowire transparent electrode by using a platinum electrode as a cathode, using a platinum electrode as an anode, using a silver | silver chloride electrode as a reference electrode, immersing the silver nanowire transparent electrode in the electrolyte, applying a working voltage of-1.5V by using a constant voltage source, electrodepositing for 35min, switching off a power supply, immersing the electrodeposited silver nanowire transparent electrode in normal temperature deionized water in a stirring state, keeping for 20s, and then annealing at 150 ℃ on a hot bench for 15min to complete the preparation of the aluminum oxide protected high-flatness silver nanowire transparent electrode shown in FIG. 6.
Example 4
Preparing a silver nanowire-based transparent electrode by using the same method as that of the embodiment 1, preparing 200mL of an aqueous solution containing 5mmol/L of aluminum nitrate nonahydrate and 0.15mol/L of potassium nitrate as an electrolyte, heating to 75 ℃, clamping the silver nanowire transparent electrode by using a platinum electrode as a cathode, using a platinum electrode as an anode, using a silver | silver chloride electrode as a reference electrode, immersing the silver nanowire transparent electrode in the electrolyte, applying a working voltage of-1.5V by using a constant voltage source, electrodepositing for 35min, switching off a power supply, immersing the electrodeposited silver nanowire transparent electrode in normal temperature deionized water in a stirring state, keeping for 20s, and then annealing at 150 ℃ on a hot bench for 15min to complete the preparation of the aluminum oxide protected high-flatness silver nanowire transparent electrode shown in fig. 7.
Comparative example 1
A transparent electrode based on silver nanowires of a glass substrate was prepared in the same manner as in example 1. Preparing 200mL of 2mmol/L zinc nitrate hexahydrate aqueous solution serving as electrolyte, heating to 75 ℃, clamping the silver nanowire transparent electrode serving as a cathode by using a platinum electrode, using the platinum electrode as an anode, using a silver | silver chloride electrode as a reference electrode, immersing the silver nanowire transparent electrode in the electrolyte, applying-1.5V working voltage by using a constant voltage source, and carrying out electro-deposition for 35 min. And (3) switching off a power supply, immersing the silver nanowire transparent electrode subjected to electrodeposition in normal-temperature deionized water in a stirring state, keeping for 20s, and then annealing at 150 ℃ for 15min on a hot bench to complete the preparation of the zinc oxide protective silver nanowire transparent electrode of the glass substrate, wherein an SEM image of the zinc oxide protective silver nanowire transparent electrode is shown in FIG. 8. Compared with the aluminum oxide protective layer, the aluminum oxide protective layer has the advantages that the surface is obviously rough, the deposition area of zinc oxide is far larger than the area where the silver nanowires are located, the light transmittance of the transparent electrode is obviously influenced, the transmittance is only 58.4% through testing, and the sheet resistance is reduced to 32.03 omega · sq-1The quality factor is only 0.14.
Fig. 9 compares the roughness of the silver nanowire transparent electrode protected by the zinc oxide and the silver nanowire transparent electrode protected by the aluminum oxide deposited for 35min in example 1 by a laser confocal microscope through three-dimensional scanning, the scanning position of the roughness profile curve is the position indicated by the arrow in the inset of fig. 9, the arithmetic mean deviation Ra and the root mean square deviation Rq of comparative example 1 are calculated to be 72nm and 90nm respectively, and the surface roughness Ra is 20nm and Rq is 24nm which are far larger than that of the silver nanowire protected by the aluminum oxide in example 1.
Comparative example 2
Preparing a silver nanowire-based transparent electrode by using the same method as that of the embodiment 1, preparing 200mL of an aqueous solution containing 0.1mol/L of aluminum nitrate nonahydrate and 0.15mol/L of potassium nitrate as an electrolyte, heating to 75 ℃, clamping the silver nanowire transparent electrode by using a platinum electrode as a cathode, using a platinum electrode as an anode, using a silver | silver chloride electrode as a reference electrode, immersing the silver nanowire transparent electrode into the electrolyte, applying a working voltage of-1.5V by using a constant voltage source, electrodepositing for 35min, switching off a power supply, immersing the electrodeposited silver nanowire transparent electrode into deionized water at normal temperature in a stirring state, keeping for 20s, and then annealing at 150 ℃ for 15min on a hot bench to complete the preparation of the electrodeposited aluminum oxide silver nanowire transparent electrode shown in fig. 10. The aluminum oxide layer is obviously expanded, the total line width reaches 3-4 times of that of the original silver nanowire, partial aluminum oxide particles are deposited in a window area without the nanowire, the light absorption rate of the film is obviously increased, and the transmittance is reduced to 64.5%.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (10)
1. The preparation method of the aluminum oxide protective silver nanowire transparent electrode is characterized by comprising the following steps:
(1) coating the silver nanowire solution on a substrate, and preparing a silver nanowire transparent conductive film after annealing treatment;
(2) taking a silver nanowire transparent conductive film as a cathode, a platinum electrode as an anode, a silver | silver chloride electrode as a reference electrode, a solution containing aluminum nitrate nonahydrate as an electrolyte, electrodepositing an aluminum oxide protective layer on the silver nanowire transparent conductive film in a three-electrode system constant voltage mode, washing, and annealing to obtain the aluminum oxide protective silver nanowire transparent electrode.
2. The method for preparing the aluminum oxide-protected silver nanowire transparent electrode according to claim 1, wherein the concentration of aluminum nitrate nonahydrate in the electrolyte in the step (2) is 1-5 mmol/L; the electrolyte in the step (2) contains 0.05-0.2 mol/L potassium nitrate; the solvent of the electrolyte is water.
3. The method for preparing the aluminum oxide protective silver nanowire transparent electrode according to claim 1, wherein the electrodeposition temperature in the step (2) is 65-85 ℃, the voltage is-2-0.5V, and the time is 15-60 min.
4. The method for preparing the aluminum oxide-protected silver nanowire transparent electrode as claimed in claim 1, wherein the volume of the electrolyte in the step (2) is determined by the area of the silver nanowire transparent conductive film and is 100-300 mL/cm2(ii) a The thickness of the aluminum oxide protective layer is 10-40 nm.
5. The method for preparing the aluminum oxide protective silver nanowire transparent electrode according to claim 1, wherein the annealing treatment in the step (2) is carried out at a temperature of 80-180 ℃ for 10-30 min.
6. The method for preparing the aluminum oxide protective silver nanowire transparent electrode according to claim 1, wherein the washing in the step (2) is deionized water rinsing, and the rinsing time is 10-30 s.
7. The method for preparing the aluminum oxide protective silver nanowire transparent electrode according to claim 1, wherein the concentration of the silver nanowire solution in the step (1) is 0.012-1.2 mg/mL, and the solvent is ethanol; the annealing temperature is 100-140 ℃, and the annealing time is 15-60 min.
8. The method for preparing the aluminum oxide protective silver nanowire transparent electrode according to claim 1, wherein the coating method in the step (1) is at least one of spin coating, spray coating, suction filtration transfer printing and blade coating; the substrate is a rigid or flexible substrate, the rigid substrate is at least one of glass and a silicon chip, and the flexible substrate is at least one of PI, PET, PEN and PDMS.
9. An alumina protected silver nanowire transparent electrode made by the method of any one of claims 1 to 8.
10. Use of the alumina protected silver nanowire transparent electrode of claim 9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011608047.8A CN112768140B (en) | 2020-12-30 | 2020-12-30 | Aluminum oxide protective silver nanowire transparent electrode and preparation method and application thereof |
| PCT/CN2021/123467 WO2022142586A1 (en) | 2020-12-30 | 2021-10-13 | Aluminum oxide protected silver nanowire transparent electrode, preparation method therefor and use thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011608047.8A CN112768140B (en) | 2020-12-30 | 2020-12-30 | Aluminum oxide protective silver nanowire transparent electrode and preparation method and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112768140A true CN112768140A (en) | 2021-05-07 |
| CN112768140B CN112768140B (en) | 2022-06-14 |
Family
ID=75697517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011608047.8A Active CN112768140B (en) | 2020-12-30 | 2020-12-30 | Aluminum oxide protective silver nanowire transparent electrode and preparation method and application thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN112768140B (en) |
| WO (1) | WO2022142586A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022142586A1 (en) * | 2020-12-30 | 2022-07-07 | 华南理工大学 | Aluminum oxide protected silver nanowire transparent electrode, preparation method therefor and use thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115850796A (en) * | 2022-11-02 | 2023-03-28 | 上海第二工业大学 | Modified nanowire, high-thermal-conductivity composite material and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150094981A (en) * | 2014-02-12 | 2015-08-20 | 한국과학기술원 | Method for coating anti-oxidation film on transparent metal electrode with anti-oxidation film and transparent metal electrode coated with anti-oxidation film |
| CN105002469A (en) * | 2015-07-10 | 2015-10-28 | 中国科学院宁波材料技术与工程研究所 | Ceramic-metal nanowire composite film and preparation method thereof |
| CN105242334A (en) * | 2015-10-27 | 2016-01-13 | 中国科学院宁波材料技术与工程研究所 | Multilayer metal ceramic thin film having wide-spectrum ultrafast nonlinear optical response performance and preparation method thereof |
| CN108517048A (en) * | 2018-04-28 | 2018-09-11 | 吉林建筑大学 | A kind of nano silver wire grid-redox graphene combination electrode and preparation method thereof |
| CN110273170A (en) * | 2019-06-13 | 2019-09-24 | 东北师范大学 | A kind of metal nanometer line network and preparation method thereof of graphene or metal oxide cladding |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103413842B (en) * | 2013-07-11 | 2016-05-04 | 长沙理工大学 | A kind of A1 doping ZnO electrically conducting transparent micro-/ nano linear array film and preparation method thereof |
| JP6713850B2 (en) * | 2016-06-16 | 2020-06-24 | 株式会社トッパンＴｏｍｏｅｇａｗａオプティカルフィルム | Transparent conductive film, method of manufacturing the same, and touch panel including transparent conductive film |
| US10714230B2 (en) * | 2017-12-06 | 2020-07-14 | C3Nano Inc. | Thin and uniform silver nanowires, method of synthesis and transparent conductive films formed from the nanowires |
| CN112768140B (en) * | 2020-12-30 | 2022-06-14 | 华南理工大学 | Aluminum oxide protective silver nanowire transparent electrode and preparation method and application thereof |
-
2020
- 2020-12-30 CN CN202011608047.8A patent/CN112768140B/en active Active
-
2021
- 2021-10-13 WO PCT/CN2021/123467 patent/WO2022142586A1/en unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150094981A (en) * | 2014-02-12 | 2015-08-20 | 한국과학기술원 | Method for coating anti-oxidation film on transparent metal electrode with anti-oxidation film and transparent metal electrode coated with anti-oxidation film |
| CN105002469A (en) * | 2015-07-10 | 2015-10-28 | 中国科学院宁波材料技术与工程研究所 | Ceramic-metal nanowire composite film and preparation method thereof |
| CN105242334A (en) * | 2015-10-27 | 2016-01-13 | 中国科学院宁波材料技术与工程研究所 | Multilayer metal ceramic thin film having wide-spectrum ultrafast nonlinear optical response performance and preparation method thereof |
| CN108517048A (en) * | 2018-04-28 | 2018-09-11 | 吉林建筑大学 | A kind of nano silver wire grid-redox graphene combination electrode and preparation method thereof |
| CN110273170A (en) * | 2019-06-13 | 2019-09-24 | 东北师范大学 | A kind of metal nanometer line network and preparation method thereof of graphene or metal oxide cladding |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022142586A1 (en) * | 2020-12-30 | 2022-07-07 | 华南理工大学 | Aluminum oxide protected silver nanowire transparent electrode, preparation method therefor and use thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112768140B (en) | 2022-06-14 |
| WO2022142586A1 (en) | 2022-07-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112768140B (en) | Aluminum oxide protective silver nanowire transparent electrode and preparation method and application thereof | |
| CN101803037B (en) | Composite membrane for super straight solar cell, process for producing the composite membrane for super straight solar cell, composite membrane for substraight solar cell, and process for producing the composite membrane for substraight solar cell | |
| CN109461821A (en) | A kind of preparation method of hybrid inorganic-organic perovskite thin film | |
| CN104681645A (en) | Method for preparing composite transparent conductive electrode based on metal grid and metal nano-wire | |
| CN101030605A (en) | Solar cell and manufacturing method thereof | |
| CN101515505B (en) | Method for preparing platinum electrode of dye sensitized solar cell | |
| CN110364429B (en) | Metal nanowire film, preparation method thereof and thin film transistor array | |
| CN114551723B (en) | Perovskite battery based on acid treatment of tin oxide and preparation thereof | |
| CN107424682A (en) | A kind of preparation method of the porous metal film transparent conductive electrode with fractal structure | |
| US20220341027A1 (en) | Method for preparing bismuth oxide nanowire films by heating in upside down position | |
| JP5295751B2 (en) | Zinc oxide film forming method and zinc oxide film forming apparatus | |
| CN108806885A (en) | Flexible substrates-GO- metal nanometer line compound transparent electricity conductive films and preparation method thereof | |
| CN110112296A (en) | A kind of preparation method of large area perovskite solar battery | |
| CN110061140A (en) | A kind of stratiform NiO base carbon electrode perovskite solar battery and preparation method thereof | |
| EP2045849A2 (en) | Conducting substrate structure with controlled nanorod density and method of fabricating the same | |
| CN105951146B (en) | A kind of preparation method of antimony trisulfide film | |
| CN110061137B (en) | Perovskite battery for preparing tin oxide electron transport layer based on room-temperature film formation and preparation method thereof | |
| CN104393069B (en) | Titanium dioxide nanocrystal particle, manufacturing method thereof, and applications to solar cell | |
| CN106876141A (en) | A kind of preparation method of high-sequential platinum silicon nanowires to electrode | |
| JP4894101B2 (en) | Method for manufacturing counter electrode of dye-sensitized solar cell, method for manufacturing dye-sensitized solar cell | |
| CN102262961A (en) | Method for forming electrodes of solar battery | |
| CN113689974A (en) | Metal nanowire transparent electrode and preparation method thereof | |
| CN211238263U (en) | Flexible nanofiber zinc tin oxide field effect transistor | |
| US9349540B2 (en) | Method for manufacturing platinum nanoparticle solution and self-assembled platinum counter electrode thereof | |
| CN109336195B (en) | A kind of electrochomeric films and preparation method thereof with net plastochondria ordered structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |