CN112751151A - High-performance miniaturized directional coupler chip - Google Patents
High-performance miniaturized directional coupler chip Download PDFInfo
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- CN112751151A CN112751151A CN202011548727.5A CN202011548727A CN112751151A CN 112751151 A CN112751151 A CN 112751151A CN 202011548727 A CN202011548727 A CN 202011548727A CN 112751151 A CN112751151 A CN 112751151A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
- H01P5/18—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
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Abstract
The invention relates to the field of miniaturized directional coupler chips, in particular to a high-performance miniaturized directional coupler chip which comprises a distributed circuit and a concentration element circuit, wherein the distributed circuit adopts a four-port microstrip directional coupler, and the four-port microstrip directional coupler comprises an input end, a straight-through end, a coupling end and an isolation end; the coupling end and the isolation end are respectively connected with the lumped element circuit in series. The coupler chip uses integrated circuit technology, has small volume and cost, and can realize chip formation. Microstrip line structures are used at the output end and the straight-through end, so that the power amplifier has very low insertion loss and high power passing capacity; the lumped element circuit is connected in series with the coupling output end of the distributed microstrip directional coupler, so that the signal output by the coupling end has high flatness in an ultra-wide band; the lumped element circuit is connected in series with the isolation output end of the distributed microstrip directional coupler, so that signals output by the isolation end have high isolation in an ultra-wide band.
Description
Technical Field
The invention belongs to the field of miniaturized directional coupler chips, and particularly relates to a high-performance miniaturized directional coupler chip.
Background
The directional coupler is a microwave low-loss passive device, has directivity, can distribute power of microwave signals in a certain proportion, and is a basic microwave element which is widely applied to radio frequency circuits and measurement systems. With the continuous development of microwave technology, the requirements of equipment on low cost, miniaturization, high power, ultra wide band and high integration level are more and more strict, the traditional directional coupler can not meet the requirements, and a plurality of problems exist: the directional coupler of the waveguide structure has large volume, high cost and difficult integration; the directional coupler based on the PCB or ceramic substrate microstrip structure has narrow bandwidth and low isolation; the directional coupler using the lumped element structure has the advantages of large loss, low power resistance and low isolation.
All the above circuit schemes cannot meet the current demand for high-performance directional couplers, and especially cannot realize the technical scheme of miniaturization and chip formation.
Disclosure of Invention
In view of the problems of the background art, the present invention provides a high performance miniaturized directional coupler chip.
In order to solve the technical problems, the invention adopts the following technical scheme: a high-performance miniaturized directional coupler chip comprises a distributed circuit and a lumped element circuit, wherein the distributed circuit adopts a four-port microstrip directional coupler, and the four-port microstrip directional coupler comprises an input end, a straight-through end, a coupling end and an isolation end; the coupling end and the isolation end are respectively connected with the lumped element circuit in series.
In the high-performance miniaturized directional coupler chip, the length of a microstrip line of the four-port microstrip directional coupler is less than a quarter wavelength; the microstrip line is made of gold, silver, copper, iron, aluminum or graphene.
In the high-performance miniaturized directional coupler chip, the lumped element circuit with serially connected coupling ends comprises first, second and third inductors L1, L2 and L3, first and second capacitors C1 and C2, and first, second, third and fourth resistors R1, R2, R3 and R4; a branch of a first capacitor C1 connected in series with a second inductor L2 is connected in parallel with a branch of a first resistor R1 connected in series with a second resistor R2 connected in series with a third resistor R3, one end of the parallel branch is connected to a first inductor L1, the other end of the parallel branch is a coupling end of a lumped element circuit, the other end of the first inductor L1 is connected to the coupling end, after the third inductor L3 is connected in parallel with a second capacitor C2, one end of the third inductor L3 is connected to a fourth resistor R4, the other end of the third inductor L4 is connected to the ground, and the other end of the fourth resistor R4 is connected between the second resistor R;
the lumped element circuit with the series-connected isolation ends comprises fourth, fifth and sixth inductors L4, L5 and L6, third and fourth capacitors C3 and C4, fifth, sixth, seventh, eighth and ninth resistors R5, R6, R7, R8 and R9; a branch of the third capacitor C3 connected in series with the fifth inductor L5 is connected in parallel with a branch of the fifth resistor R5 and a branch of the sixth resistor R6 connected in series with the seventh resistor R7, one end of the parallel branch is connected to the fourth inductor L4, the other end of the parallel branch is connected to the ninth resistor R9, the other end of the ninth resistor R9 is grounded, the other end of the fourth inductor L4 is connected to the isolation end, after the sixth inductor L6 is connected in parallel with the fourth capacitor C4, one end of the sixth inductor L8 is connected to the ground, and the other end of the eighth resistor R8 is connected between the sixth resistor R6 and the seventh resistor R7.
In the above high-performance miniaturized directional coupler chip, the substrate material used for the coupler chip is silicon, gallium arsenide, gallium nitride, silicon carbide, sapphire or ceramic wafer.
In the high-performance miniaturized directional coupler chip, the inductance values of the first inductor L1 and the fourth inductor L4 are the same; the inductance values of the second inductor L2 and the fifth inductor L5 are the same; the inductance values of the third inductor L3 and the sixth inductor L6 are the same; the capacitance values of the first capacitor C1 and the third capacitor C3 are the same; the capacitance values of the second capacitor C2 and the fourth capacitor C4 are the same; the resistance values of the first resistor R1 and the fifth resistor R5 are the same; the resistance values of the second resistor R2, the third resistor R3, the sixth resistor R6 and the seventh resistor R7 are the same; the fourth resistor R4 and the eighth resistor R8 have the same resistance value; the ninth resistor R9 has a resistance value of 50 ohms.
Compared with the prior art, the invention has the beneficial effects that: the invention uses the integrated circuit technology, has small volume and cost and can realize the chip. Microstrip line structures are used at the output end and the straight-through end, so that the power amplifier has very low insertion loss and high power passing capacity; the lumped element circuit is connected in series with the coupling output end of the distributed microstrip directional coupler, so that the signal output by the coupling end has high flatness in an ultra-wide band; the lumped element circuit is connected in series with the isolation output end of the distributed microstrip directional coupler, so that signals output by the isolation end have high isolation in an ultra-wide band.
Drawings
FIG. 1 is a circuit schematic of one embodiment of the present invention;
FIG. 2 shows simulation results of S-parameters outputted from the coupling terminal according to an embodiment of the present invention;
fig. 3 is a simulation result of the S parameter output by the isolated terminal according to an embodiment of the present invention.
The microstrip line of the 1-distributed circuit comprises a 1A-input end and a 1B-through end; 2-microstrip line of distributed circuit, 2A-coupling end, 2B-isolation end.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the following embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The present invention is further illustrated by the following examples, which are not to be construed as limiting the invention.
The embodiment provides an ultra-wideband, high-isolation and chip-based high-performance miniaturized directional coupler chip, which comprises a distributed circuit and a lumped element circuit; the distributed circuit adopts a four-port microstrip directional coupler structure, wherein 1A is an input end, 1B is a straight-through end, 2A is a coupling end, and 2B is an isolation end. Lumped element circuits are connected in series at the coupling end 2A and the isolation end 2B, and the input end 1A and the straight-through end 1B are not connected with any circuit in series; the length of the microstrip line of the microstrip circuit is less than a quarter wavelength; the lumped element circuit adopts three components of a resistor, an inductor and a capacitor. The lumped element circuit is connected in series at the coupling end of the distributed microstrip line directional coupler to balance the amplitude of the output signal of the coupling end, so that the signal output by the coupling end has high flatness in an ultra-wide band. The isolation end of the distributed microstrip line directional coupler is connected with the lumped element circuit in series, so that the isolation effect on the amplitude of the output signal of the isolation end can be realized, and the signal output by the isolation end has high isolation in an ultra-wide band.
The lumped element circuit with serially connected coupling ends in this embodiment includes first, second and third inductors L1, L2 and L3, first and second capacitors C1 and C2, first, second, third and fourth resistors R1, R2, R3 and R4; one end of a first inductor L1 is connected with the coupling end 2A, and the other end is connected with a first capacitor C1, a first resistor R1 and a third resistor R3; the other end of the first capacitor C1 is connected to the second inductor L2, the other end of the third resistor R3 is connected to the second resistor R2 and the fourth resistor R4, the other ends of the second inductor L2, the first resistor R1 and the second resistor R2 are coupled ends of a lumped element circuit, the other end of the fourth resistor R4 is connected to the third inductor L3 and the second capacitor C2, and the other ends of the third inductor L3 and the second capacitor C2 are connected to the ground.
The lumped element circuit with series-connected isolation ends in the embodiment comprises fourth, fifth and sixth inductors L4, L5 and L6, third and fourth capacitors C3 and C4, fifth, sixth, seventh, eighth and ninth resistors R5, R6, R7, R8 and R9; one end of a fourth inductor L4 is connected to the isolation terminal 2B, the other end of the fourth inductor L4 is connected to a fifth inductor L5, a fifth resistor R5 and a sixth resistor R6, the other end of the fifth inductor L5 is connected to a third capacitor C3, the other end of the sixth resistor R6 is connected to a seventh resistor R7 and an eighth resistor R8, the other ends of the third capacitor C3, the fifth resistor R5 and the seventh resistor R7 are connected to a ninth resistor R9, the other end of the ninth resistor R9 is connected to ground, the other end of the eighth resistor R8 is connected to the sixth inductor L6 and the fourth capacitor C4, and the other ends of the sixth inductor L6 and the fourth capacitor C4 are connected to ground.
The inductance values of the first inductor L1 and the fourth inductor L4 are the same; the inductance values of the second inductor L2 and the fifth inductor L5 are the same; the inductance values of the third inductor L3 and the sixth inductor L6 are the same; the capacitance values of the first capacitor C1 and the third capacitor C3 are the same; the capacitance values of the second capacitor C2 and the fourth capacitor C4 are the same; the resistance values of the first resistor R1 and the fifth resistor R5 are the same; the resistance values of the second resistor R2, the third resistor R3, the sixth resistor R6 and the seventh resistor R7 are the same; the fourth resistor R4 and the eighth resistor R8 have the same resistance value; the ninth resistor R9 has a resistance value of 50 ohms.
In specific implementation, as shown in fig. 1, a high-performance miniaturized directional coupler chip, in which a distributed circuit adopts a directional coupler with a microstrip line structure, and the directional coupler with the structure has the advantages of low insertion loss of output signals at a direct-through end and high power passing capability;
the coupling end of the microstrip directional coupler is connected with a lumped element circuit in series, and the lumped element circuit can adjust the amplitude of an output signal of the coupling end to enable the output signal to have high flatness within the bandwidth exceeding 20 GHz. As shown in fig. 2.
The isolation end of the microstrip line directional coupler is connected with a lumped element circuit in series, and the lumped element circuit can isolate signals output by the isolation end, so that the signals have high isolation within a bandwidth exceeding 20 GHz. As shown in fig. 3.
The lumped element circuit with the coupling ends connected in series comprises first, second and third inductors L1, L2 and L3, first and second capacitors C1 and C2, first, second, third and fourth resistors R1, R2, R3 and R4; a branch of a first capacitor C1 connected in series with a second inductor L2 is connected in parallel with a branch of a first resistor R1 connected in series with a second resistor R2 connected in series with a third resistor R3, one end of the parallel branch is connected to a first inductor L1, the other end of the parallel branch is a coupling end of a lumped element circuit, the other end of the first inductor L1 is connected to the coupling end, after the third inductor L3 is connected in parallel with a second capacitor C2, one end of the third inductor L3 is connected to a fourth resistor R4, the other end of the third inductor L4 is connected to the ground, and the other end of the fourth resistor R4 is connected between the second resistor R;
the lumped element circuit with the series-connected isolation ends comprises fourth, fifth and sixth inductors L4, L5 and L6, third and fourth capacitors C3 and C4, fifth, sixth, seventh, eighth and ninth resistors R5, R6, R7, R8 and R9; a branch of the third capacitor C3 connected in series with the fifth inductor L5 is connected in parallel with a branch of the fifth resistor R5 and a branch of the sixth resistor R6 connected in series with the seventh resistor R7, one end of the parallel branch is connected to the fourth inductor L4, the other end of the parallel branch is connected to the ninth resistor R9, the other end of the ninth resistor R9 is grounded, the other end of the fourth inductor L4 is connected to the isolation end, after the sixth inductor L6 is connected in parallel with the fourth capacitor C4, one end of the sixth inductor L8 is connected to the ground, and the other end of the eighth resistor R8 is connected between the sixth resistor R6 and the seventh resistor R7.
In this embodiment, the length of the distributed microstrip line 1 is 1900um, the width is 40um, the length of the distributed microstrip line 2 is 1900um, the width is 40um, the inductance of the first inductor L1 is 0.1nH, the capacitance of the first capacitor C1 is 2.7pF, the inductance of the second inductor L2 is 3.2nH, the resistance of the first resistor R1 is 268 ohm, the resistance of the second resistor R2 is 50 ohm, the resistance of the third resistor R3 is 50 ohm, the resistance of the fourth resistor R4 is 14 ohm, the inductance of the third inductor L3 is 3.3nH, the capacitance of the second capacitor C2 is 1.25pF, the inductance of the fourth inductor L4 is 0.1nH, the capacitance of the third capacitor C3 is 2.7pF, the inductance of the fifth inductor L5 is 3.2nH, the resistance of the fifth resistor R5 is 1.25pF, the resistance of the sixth resistor R37 ohm, the capacitance of the sixth resistor R963 is 50 ohm, the resistance of the seventh resistor R8 is 50 ohm, the resistance of the eighth resistor R963.3 ohm, the capacitance of the fourth capacitor C4 is 1.25pF, and the resistance of the ninth resistor R9 is 50 ohms.
The patent with the publication number of CN211578938U is named as an ultra wide band high power directional coupler, the bandwidth of which is 500MHz, and the volume of which is 53.5mm multiplied by 46mm multiplied by 15 mm. The bandwidth of the coupler chip exceeds 20GHz, but the volume of the chip is only 2.3mm multiplied by 1.2mm multiplied by 0.1 mm.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
Claims (5)
1. A high-performance miniaturized directional coupler chip is characterized by comprising a distributed circuit and a lumped element circuit, wherein the distributed circuit adopts a four-port microstrip directional coupler, and the four-port microstrip directional coupler comprises an input end, a straight-through end, a coupling end and an isolation end; the coupling end and the isolation end are respectively connected with the lumped element circuit in series.
2. The high-performance miniaturized directional coupler chip according to claim 1, wherein the length of the microstrip line of the four-port microstrip directional coupler is less than a quarter wavelength; the microstrip line is made of gold, silver, copper, iron, aluminum or graphene.
3. The high-performance miniaturized directional coupler chip of claim 1, wherein the lumped element circuit with serially connected coupling terminals comprises a first inductor, a second inductor, a third inductor, L1, L2, L3, a first capacitor, a second capacitor, C1, C2, a first resistor, a second resistor, a third resistor, a fourth resistor, R1, R2, R3, R4; a branch of a first capacitor C1 connected in series with a second inductor L2 is connected in parallel with a branch of a first resistor R1 connected in series with a second resistor R2 connected in series with a third resistor R3, one end of the parallel branch is connected to a first inductor L1, the other end of the parallel branch is a coupling end of a lumped element circuit, the other end of the first inductor L1 is connected to the coupling end, after the third inductor L3 is connected in parallel with a second capacitor C2, one end of the third inductor L3 is connected to a fourth resistor R4, the other end of the third inductor L4 is connected to the ground, and the other end of the fourth resistor R4 is connected between the second resistor R;
the lumped element circuit with the series-connected isolation ends comprises fourth, fifth and sixth inductors L4, L5 and L6, third and fourth capacitors C3 and C4, fifth, sixth, seventh, eighth and ninth resistors R5, R6, R7, R8 and R9; a branch of the third capacitor C3 connected in series with the fifth inductor L5 is connected in parallel with a branch of the fifth resistor R5 and a branch of the sixth resistor R6 connected in series with the seventh resistor R7, one end of the parallel branch is connected to the fourth inductor L4, the other end of the parallel branch is connected to the ninth resistor R9, the other end of the ninth resistor R9 is grounded, the other end of the fourth inductor L4 is connected to the isolation end, after the sixth inductor L6 is connected in parallel with the fourth capacitor C4, one end of the sixth inductor L8 is connected to the ground, and the other end of the eighth resistor R8 is connected between the sixth resistor R6 and the seventh resistor R7.
4. The high performance miniaturized directional coupler chip of claim 1, wherein the substrate material used for the coupler chip is silicon, gallium arsenide, gallium nitride, silicon carbide, sapphire or ceramic wafer.
5. The high performance miniaturized directional coupler chip of claim 3, wherein the inductance values of the first inductor L1 and the fourth inductor L4 are the same; the inductance values of the second inductor L2 and the fifth inductor L5 are the same; the inductance values of the third inductor L3 and the sixth inductor L6 are the same; the capacitance values of the first capacitor C1 and the third capacitor C3 are the same; the capacitance values of the second capacitor C2 and the fourth capacitor C4 are the same; the resistance values of the first resistor R1 and the fifth resistor R5 are the same; the resistance values of the second resistor R2, the third resistor R3, the sixth resistor R6 and the seventh resistor R7 are the same; the fourth resistor R4 and the eighth resistor R8 have the same resistance value; the ninth resistor R9 has a resistance value of 50 ohms.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115084816A (en) * | 2022-07-21 | 2022-09-20 | Oppo广东移动通信有限公司 | Radio frequency circuit, passive circuit and electronic equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204271236U (en) * | 2014-11-20 | 2015-04-15 | 广州海格通信集团股份有限公司 | The miniaturized directional coupler of a kind of broadband |
| CN105226368A (en) * | 2015-11-12 | 2016-01-06 | 无锡中普微电子有限公司 | Braodband directional coupler |
| US20190198964A1 (en) * | 2017-05-12 | 2019-06-27 | Psemi Corporation | Compact Low Loss Signal Coupler |
| CN211578938U (en) * | 2020-03-30 | 2020-09-25 | 江苏航天神禾科技有限公司 | Ultra-wideband high-power directional coupler |
| CN111884732A (en) * | 2020-07-15 | 2020-11-03 | 武汉博畅通信设备有限责任公司 | Standing-wave ratio warning circuit |
-
2020
- 2020-12-24 CN CN202011548727.5A patent/CN112751151B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204271236U (en) * | 2014-11-20 | 2015-04-15 | 广州海格通信集团股份有限公司 | The miniaturized directional coupler of a kind of broadband |
| CN105226368A (en) * | 2015-11-12 | 2016-01-06 | 无锡中普微电子有限公司 | Braodband directional coupler |
| US20190198964A1 (en) * | 2017-05-12 | 2019-06-27 | Psemi Corporation | Compact Low Loss Signal Coupler |
| CN211578938U (en) * | 2020-03-30 | 2020-09-25 | 江苏航天神禾科技有限公司 | Ultra-wideband high-power directional coupler |
| CN111884732A (en) * | 2020-07-15 | 2020-11-03 | 武汉博畅通信设备有限责任公司 | Standing-wave ratio warning circuit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115084816A (en) * | 2022-07-21 | 2022-09-20 | Oppo广东移动通信有限公司 | Radio frequency circuit, passive circuit and electronic equipment |
| CN115084816B (en) * | 2022-07-21 | 2024-03-01 | Oppo广东移动通信有限公司 | Radio frequency circuit, passive circuit and electronic equipment |
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| CN112751151B (en) | 2021-12-17 |
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