CN112746255A - Preparation method of diamond-like film glass - Google Patents
Preparation method of diamond-like film glass Download PDFInfo
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- CN112746255A CN112746255A CN201911043039.0A CN201911043039A CN112746255A CN 112746255 A CN112746255 A CN 112746255A CN 201911043039 A CN201911043039 A CN 201911043039A CN 112746255 A CN112746255 A CN 112746255A
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- 239000011521 glass Substances 0.000 title claims abstract description 97
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000010410 layer Substances 0.000 claims abstract description 73
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 60
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000001257 hydrogen Substances 0.000 claims abstract description 46
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 46
- 238000002834 transmittance Methods 0.000 claims abstract description 38
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 37
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 30
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 30
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000011247 coating layer Substances 0.000 claims abstract description 20
- 239000007888 film coating Substances 0.000 claims abstract description 6
- 238000009501 film coating Methods 0.000 claims abstract description 6
- 230000003666 anti-fingerprint Effects 0.000 claims abstract description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 74
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 53
- 239000013077 target material Substances 0.000 claims description 43
- 229910052786 argon Inorganic materials 0.000 claims description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 229910002804 graphite Inorganic materials 0.000 claims description 9
- 239000010439 graphite Substances 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 238000010884 ion-beam technique Methods 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 5
- 230000000052 comparative effect Effects 0.000 description 10
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013068 control sample Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Mechanical Engineering (AREA)
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- Physical Vapour Deposition (AREA)
Abstract
The invention provides a preparation method of diamond-like film glass, which comprises the following steps: (1) forming a silicon dioxide layer on the surface of the glass substrate; (2) forming a hydrogen-containing diamond-like carbon coating layer on the silicon dioxide layer of the glass substrate treated in the step (1); (3) and (3) forming a high-transmittance fingerprint-proof AF film layer on the hydrogen-containing diamond-like carbon film coating layer of the glass substrate treated in the step (2). The method greatly improves the hardness and wear resistance of the prepared glass, reduces the hydrophilicity, avoids the attachment of foreign matters possibly caused by the attachment of water, and forms the silicon dioxide layer on the glass substrate firstly, so that the hydrogen-containing diamond-like carbon coating layer and the high-transmittance anti-fingerprint AF film layer have good binding force with the glass substrate, and the falling off of the hydrogen-containing diamond-like carbon coating layer and the high-transmittance anti-fingerprint AF film layer is avoided.
Description
Technical Field
The invention belongs to the technical field of glass preparation, and particularly relates to a preparation method of diamond-like film glass.
Background
Along with the rapid development of society, glass is more and more popular. When the glass is applied to a display, in the daily use process, the glass is easy to scratch, so that the surface of the glass is scratched, and the glass is easy to be stained with water, so that the glass is transparent, and the visual experience is influenced.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a preparation method of diamond-like film glass.
In order to achieve the purpose, the invention adopts the technical scheme that: a method for preparing diamond-like film glass, the method comprising the steps of:
(1) forming a silicon dioxide layer on the surface of the glass substrate by taking silicon as a target material;
(2) forming a hydrogen-containing diamond-like carbon coating layer on the silicon dioxide layer of the glass substrate treated in the step (1);
(3) and (3) forming a high-transmittance fingerprint-proof AF film layer (AF film) on the hydrogen-containing diamond-like carbon coating layer of the glass substrate treated in the step (2).
According to the method, the silicon dioxide layer, the hydrogen-containing diamond-like carbon coating layer and the high-transmittance fingerprint-resistant AF film layer are sequentially formed on the surface of the glass substrate, so that the hardness and the wear resistance of the prepared glass are greatly improved, the hydrophilicity is reduced, the possibility of foreign matter adhesion caused by water adhesion is avoided, the silicon dioxide layer is formed on the glass substrate firstly, the hydrogen-containing diamond-like carbon coating layer, the high-transmittance fingerprint-resistant AF film layer and the glass substrate have good binding force, the hydrogen-containing diamond-like carbon coating layer and the high-transmittance fingerprint-resistant AF film layer are prevented from falling off, and the glass obtained by the method is good in light transmittance.
Preferably, in the step (1), the glass substrate is placed under a degree of vacuum of 3.0X 10-6～6.0×10-6And under the mTorr environment, introducing argon and oxygen by taking silicon as a target material to perform magnetron sputtering to form a silicon dioxide layer on the surface of the glass substrate.
Preferably, in the step (1), the flow rate of argon is 90-110 sccm, and O2The flow rate of (2) is 28 to 32 sccm.
The inventor finds that O is generated when the flow rate of argon is 90-110 sccm in the process of forming the silicon dioxide layer by the method2When the flow rate of (2) is 28-32 sccm, the uniformity of the thickness of the silicon dioxide layer can be better controlled, and the amount of argon and hydrogen used is minimum.
Preferably, in the step (1), in the magnetron sputtering process, the incident angle of the Ar ion beam is 28-32 degrees, and the etching rate is
The power of the silicon target material is 1.0-6.0 kW.
Preferably, in the step (2), the glass substrate treated in the step (1) is placed in a vacuum degree of 5.0 × 10-6～8.0×10-6And under the mTorr environment, introducing argon and hydrogen by taking graphite as a target material to perform magnetron sputtering to form a hydrogen-containing diamond-like carbon coating layer on the silicon dioxide layer of the glass substrate.
Preferably, in the step (2), the flow rate of argon is 18-22 sccm, and the flow rate of hydrogen is 10-30 sccm.
The inventor finds that in the process of forming the hydrogen-containing diamond-like carbon coating layer, when the flow rate of the argon is 18-22 sccm and the flow rate of the hydrogen is 10-30 sccm, the uniformity of the thickness of the hydrogen-containing diamond-like carbon coating layer can be ensured and the gas flow rate can be saved.
Preferably, in the step (2), the pressure of magnetron sputtering is 4.0-5.0 mTorr, the voltage of magnetron sputtering is 650-700V, and the time of magnetron sputtering is 20-30 s.
Preferably, in the step (3), the thickness of the high-transmittance anti-fingerprint AF film layer is 8-12 nm.
The inventor finds that the thickness of the AF film layer formed by the method is 8-12 nm, the hydrophilic performance of the glass can be well improved, and the light transmission of the glass is not influenced.
Preferably, in the step (3), the degree of vacuum is 4.0X 10-6～6.0×10-6And forming a high-transmittance fingerprint-proof AF film layer by using an AF target material under the Torr condition, wherein the AF target material is a perfluorinated high polymer, and the power for forming the high-transmittance fingerprint-proof AF film layer is 5.0-8.0 kW.
The invention has the beneficial effects that: the invention provides a preparation method of diamond-like carbon film glass, which greatly improves the hardness and wear resistance of the prepared glass by forming a silicon dioxide layer, a hydrogen-containing diamond-like carbon film coating layer and a high-transmittance fingerprint-proof AF film layer on the surface of a glass substrate in sequence, reduces the hydrophilicity, avoids the attachment of water and the possible attachment of foreign matters, and firstly forms the silicon dioxide layer on the glass substrate, so that the hydrogen-containing diamond-like carbon film coating layer and the high-transmittance fingerprint-proof AF film layer have good binding force with the glass substrate, and the falling of the hydrogen-containing diamond-like carbon film coating layer and the high-transmittance fingerprint-proof AF film layer is avoided, and the glass obtained by the method has good light transmittance.
Detailed Description
To better illustrate the objects, aspects and advantages of the present invention, the present invention will be further described with reference to specific examples.
Example 1
The preparation method of the diamond-like film glass as the embodiment of the invention comprises the following steps:
(1) placing the glass substrate in a vacuum degree of 3.0X 10-6～6.0×10-6Under the mTorr environment, introducing argon and oxygen to silicon as a target material for magnetron sputtering to form a silicon dioxide layer on the surface of the glass substrate, wherein the flow of the argon is 90sccm and O is adopted in the magnetron sputtering process2The flow rate of (2) is 28sccm, the incident angle of Ar ion beam is 30 degrees, and the etching rate is
The power of the silicon target material is 3.0 kW;
(2) placing the glass substrate treated in the step (1) in a vacuum degree of 5.0 multiplied by 10-6～8.0×10-6Under the environment of mTorr, graphite is used as a target material, argon and hydrogen are introduced to carry out magnetron sputtering to form a hydrogen-containing diamond-like carbon coating layer on a silicon dioxide layer of a glass substrate, the flow of argon is 18sccm, the flow of hydrogen is 10sccm, the pressure of magnetron sputtering is 4.0mTorr, the voltage of magnetron sputtering is 700V, and the time of magnetron sputtering is 25 s;
(3) placing the glass substrate treated in the step (2) in a vacuum degree of 4.0 multiplied by 10-6～6.0×10-6And forming a high-transmittance fingerprint-proof AF film layer by using an AF target material under the Torr condition, wherein the AF target material is a perfluorinated high polymer, the power for forming the high-transmittance fingerprint-proof AF film layer is 5.0kW, and the thickness of the high-transmittance fingerprint-proof AF film layer is 10 nm.
Example 2
The preparation method of the diamond-like film glass as the embodiment of the invention comprises the following steps:
(1) placing the glass substrate in a vacuum degree of 3.0X 10-6～6.0×10-6Under the mTorr environment, introducing argon and oxygen to silicon as a target material for magnetron sputtering to form a silicon dioxide layer on the surface of the glass substrate, wherein the flow of the argon is 100sccm and O is generated in the magnetron sputtering process2The flow rate of (3) is 30sccm, the incident angle of Ar ion beam is 30 degrees, and the etching rate is
The power of the silicon target material is 3.0 kW;
(2) placing the glass substrate treated in the step (1) in a vacuum degree of 5.0 multiplied by 10-6～8.0×10-6Under the environment of mTorr, graphite is used as a target material, argon and hydrogen are introduced to carry out magnetron sputtering to form a hydrogen-containing diamond-like carbon coating layer on a silicon dioxide layer of a glass substrate, the flow of argon is 20sccm, the flow of hydrogen is 20sccm, the pressure of magnetron sputtering is 4.0mTorr, the voltage of magnetron sputtering is 700V, and the time of magnetron sputtering is 25 s;
(3) placing the glass substrate treated in the step (2) in a vacuum degree of 4.0 multiplied by 10-6～6.0×10-6And forming a high-transmittance fingerprint-proof AF film layer by using an AF target material under the Torr condition, wherein the AF target material is a perfluorinated high polymer, the power for forming the high-transmittance fingerprint-proof AF film layer is 5.0kW, and the thickness of the high-transmittance fingerprint-proof AF film layer is 10 nm.
Example 3
The preparation method of the diamond-like film glass as the embodiment of the invention comprises the following steps:
(1) placing the glass substrate in a vacuum degree of 3.0X 10-6～6.0×10-6Under the mTorr environment, introducing argon and oxygen to silicon as a target material for magnetron sputtering to form a silicon dioxide layer on the surface of the glass substrate, wherein the flow of the argon is 110sccm and O is adopted in the magnetron sputtering process2The flow rate of (2) is 32sccm, the incident angle of Ar ion beam is 30 degrees, and the etching rate is
The power of the silicon target material is 3.0 kW;
(2) placing the glass substrate treated in the step (1) in a vacuum degree of 5.0 multiplied by 10-6～8.0×10-6Under the environment of mTorr, graphite is taken as a target material, argon and hydrogen are introduced to carry out magnetron sputtering to form a hydrogen-containing diamond-like carbon coating layer on a silicon dioxide layer of a glass substrate, in the magnetron sputtering process, the flow of the argon is 22sccm, the flow of the hydrogen is 30sccm, the pressure of magnetron sputtering is 4.0mTorr, the voltage of magnetron sputtering is 700V, and the time of magnetron sputtering is 25 s;
(3) placing the glass substrate treated in the step (2) in a vacuum degree of 4.0 multiplied by 10-6～6.0×10-6And forming a high-transmittance fingerprint-proof AF film layer by using an AF target material under the Torr condition, wherein the AF target material is a perfluorinated high polymer, the power for forming the high-transmittance fingerprint-proof AF film layer is 5.0kW, and the thickness of the high-transmittance fingerprint-proof AF film layer is 10 nm.
Example 4
The preparation method of the diamond-like film glass as the embodiment of the invention comprises the following steps:
(1) placing the glass substrate in a vacuum degree of 3.0X 10-6～6.0×10-6Under the mTorr environment, introducing argon and oxygen to silicon as a target material for magnetron sputtering to form a silicon dioxide layer on the surface of the glass substrate, wherein the flow of the argon is 100sccm and O is generated in the magnetron sputtering process2The flow rate of (3) is 30sccm, the incident angle of Ar ion beam is 30 degrees, and the etching rate is
The power of the silicon target material is 3.0 kW;
(2) placing the glass substrate treated in the step (1) in a vacuum degree of 5.0 multiplied by 10-6～8.0×10-6Under the environment of mTorr, graphite is taken as a target material, argon and hydrogen are introduced to carry out magnetron sputtering to form a hydrogen-containing diamond-like carbon coating layer on a silicon dioxide layer of a glass substrate, the flow of argon is 20sccm, the flow of hydrogen is 20sccm, the pressure of magnetron sputtering is 4.0mTorr, the voltage of magnetron sputtering is 700V, and the time of magnetron sputtering is25s；
(3) Placing the glass substrate treated in the step (2) in a vacuum degree of 4.0 multiplied by 10-6～6.0×10-6And forming a high-transmittance fingerprint-proof AF film layer by using an AF target material under the Torr condition, wherein the AF target material is a perfluorinated high polymer, the power for forming the high-transmittance fingerprint-proof AF film layer is 5.0kW, and the thickness of the high-transmittance fingerprint-proof AF film layer is 8 nm.
Example 5
The preparation method of the diamond-like film glass as the embodiment of the invention comprises the following steps:
(1) placing the glass substrate in a vacuum degree of 3.0X 10-6～6.0×10-6Under the mTorr environment, introducing argon and oxygen to silicon as a target material for magnetron sputtering to form a silicon dioxide layer on the surface of the glass substrate, wherein the flow of the argon is 100sccm and O is generated in the magnetron sputtering process2The flow rate of (3) is 30sccm, the incident angle of Ar ion beam is 30 degrees, and the etching rate is
The power of the silicon target material is 3.0 kW;
(2) placing the glass substrate treated in the step (1) in a vacuum degree of 5.0 multiplied by 10-6～8.0×10-6Under the environment of mTorr, graphite is used as a target material, argon and hydrogen are introduced to carry out magnetron sputtering to form a hydrogen-containing diamond-like carbon coating layer on a silicon dioxide layer of a glass substrate, the flow of argon is 20sccm, the flow of hydrogen is 20sccm, the pressure of magnetron sputtering is 4.0mTorr, the voltage of magnetron sputtering is 700V, and the time of magnetron sputtering is 25 s;
(3) placing the glass substrate treated in the step (2) in a vacuum degree of 4.0 multiplied by 10-6～6.0×10-6And forming a high-transmittance fingerprint-proof AF film layer by using an AF target material under the Torr condition, wherein the AF target material is a perfluorinated high polymer, the power for forming the high-transmittance fingerprint-proof AF film layer is 5.0kW, and the thickness of the high-transmittance fingerprint-proof AF film layer is 12 nm.
Comparative example 1
A method for producing a diamond-like film glass as a comparative example of the present invention, the method comprising the steps of:
(1) the glass substrate was placed in a vacuum of 5.0X 10-6～8.0×10-6Under the environment of mTorr, graphite is used as a target material, argon and hydrogen are introduced to carry out magnetron sputtering to form a hydrogen-containing diamond-like carbon coating layer on a silicon dioxide layer of a glass substrate, the flow of argon is 20sccm, the flow of hydrogen is 20sccm, the pressure of magnetron sputtering is 4.0mTorr, the voltage of magnetron sputtering is 700V, and the time of magnetron sputtering is 25 s;
(2) placing the glass substrate treated in the step (1) in a vacuum degree of 4.0 multiplied by 10-6～6.0×10-6And forming a high-transmittance fingerprint-proof AF film layer by using an AF target material under the Torr condition, wherein the AF target material is a perfluorinated high polymer, the power for forming the high-transmittance fingerprint-proof AF film layer is 5.0kW, and the thickness of the high-transmittance fingerprint-proof AF film layer is 10 nm.
Comparative example 2
A method for producing a diamond-like film glass as a comparative example of the present invention, the method comprising the steps of:
(1) placing the glass substrate in a vacuum degree of 3.0X 10-6～6.0×10-6Under the mTorr environment, introducing argon and oxygen to silicon as a target material for magnetron sputtering to form a silicon dioxide layer on the surface of the glass substrate, wherein in the magnetron sputtering process, the flow of the argon is 100sccm, and O is adopted2The flow rate of (3) is 30sccm, the incident angle of Ar ion beam is 30 degrees, and the etching rate is
The power of the silicon target material is 3.0 kW;
(2) placing the glass substrate treated in the step (1) in a vacuum degree of 5.0 multiplied by 10-6～8.0×10-6And under the environment of mTorr, introducing argon and hydrogen by taking graphite as a target material to perform magnetron sputtering to form a hydrogen-containing diamond-like carbon coating layer on the silicon dioxide layer of the glass substrate, wherein the flow of the argon is 20sccm, the flow of the hydrogen is 20sccm, the pressure of the magnetron sputtering is 4.0mTorr, the voltage of the magnetron sputtering is 700V, and the time of the magnetron sputtering is 25 s.
Effect example 1
The hardness and hydrophilicity of the diamond-like film glass prepared by the method of example 2 and comparative examples 1-2 were measured using a glass substrate as a control sample, and the results are shown in table 1:
TABLE 1 Performance parameters of Diamond-like film glasses of example 2 and comparative examples 1-2
| Sample (I) | Hardness of | Hydrophilicity |
| Glass substrate | 6.5 | 60 degree |
| Comparative example 1 | 25 | 150 degree |
| Comparative example 2 | 27 | 90 degree |
| Example 2 | 30 | 160 degree |
By comparing the diamond-like carbon film glass of the embodiment 1 and the comparative examples 1-2 with the glass substrate, the hardness and the wear resistance of the glass are greatly improved after the hydrogen-containing diamond-like carbon film coating layer is formed on the glass, and the scratching of the glass can be well avoided.
By comparing example 1 with comparative example 2, it is demonstrated that the formation of the high-transmittance anti-fingerprint AF film layer greatly improves the hydrophilic property of the glass, makes the glass more hydrophobic, and can prevent the adhesion of water and the adhesion of foreign matters from affecting the vision.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the protection scope of the present invention, and although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (9)
1. A preparation method of diamond-like film glass is characterized by comprising the following steps:
(1) forming a silicon dioxide layer on the surface of the glass substrate by taking silicon as a target material;
(2) forming a hydrogen-containing diamond-like carbon coating layer on the silicon dioxide layer of the glass substrate treated in the step (1);
(3) and (3) forming a high-transmittance fingerprint-proof AF film layer on the hydrogen-containing diamond-like carbon film coating layer of the glass substrate treated in the step (2).
2. The production method according to claim 1, wherein in the step (1), the glass substrate is placed under a degree of vacuum of 3.0 x 10-6～6.0×10-6And under the mTorr environment, introducing argon and oxygen by taking silicon as a target material to perform magnetron sputtering to form a silicon dioxide layer on the surface of the glass substrate.
3. The method according to claim 2, wherein in the step (1), the flow rate of the argon gas is 90 to 110sccm, and O is2The flow rate of (2) is 28 to 32 sccm.
4. The preparation method according to claim 2, wherein in the step (1), an incident angle of the Ar ion beam is 28-32 degrees and an etching rate is 28-32 degrees in the magnetron sputtering process
The power of the silicon target material is 1.0-6.0 kW.
5. The production method according to claim 1, wherein in the step (2), the glass substrate treated in the step (1) is placed under a degree of vacuum of 5.0 x 10-6～8.0×10-6And under the mTorr environment, introducing argon and hydrogen by taking graphite as a target material to perform magnetron sputtering to form a hydrogen-containing diamond-like carbon coating layer on the silicon dioxide layer of the glass substrate.
6. The method according to claim 5, wherein in the step (2), the flow rate of argon is 18 to 22sccm, and the flow rate of hydrogen is 10 to 30 sccm.
7. The method according to claim 5, wherein in the step (2), the pressure of the magnetron sputtering is 4.0mTorr to 5.0mTorr, the voltage of the magnetron sputtering is 650V to 700V, and the time of the magnetron sputtering is 20s to 30 s.
8. The preparation method according to claim 1, wherein in the step (3), the thickness of the high-transmittance anti-fingerprint AF film layer is 8-12 nm.
9. The production method according to claim 8, wherein in the step (3), the degree of vacuum is 4.0X 10-6～6.0×10-6And forming a high-transmittance fingerprint-proof AF film layer by using an AF target material under the Torr condition, wherein the AF target material is a perfluorinated high polymer, and the power for forming the high-transmittance fingerprint-proof AF film layer is 5.0-8.0 kW.
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| CN107500566A (en) * | 2017-10-17 | 2017-12-22 | 信利光电股份有限公司 | A kind of wear-resisting anti-fingerprint ground glass and preparation method thereof |
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