CN112739006B - Manufacturing method of LTCC circuit substrate - Google Patents
Manufacturing method of LTCC circuit substrate Download PDFInfo
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- CN112739006B CN112739006B CN202011282405.0A CN202011282405A CN112739006B CN 112739006 B CN112739006 B CN 112739006B CN 202011282405 A CN202011282405 A CN 202011282405A CN 112739006 B CN112739006 B CN 112739006B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
Abstract
The invention provides a manufacturing method of an LTCC circuit substrate, which comprises the following steps: setting position identification points for product appearance processing during product typesetting; reserving a process edge with a preset size outside the position identification point, and setting a hot cutting alignment point on the process edge; cutting the green ceramic body according to the hot cutting pair sites to complete the conversion from the green ceramic body to the green ceramic body of a single circuit; carrying out hot pressing treatment on the green ceramic blanks of the single circuits, and finishing the co-firing treatment of the LTCC circuit substrate through a co-firing process; according to the LTCC circuit substrate appearance processing technology, the appearance cutting of each circuit substrate is completed, and the manufacture of the LTCC circuit substrates is realized.
Description
Technical Field
The invention relates to the field of LTCC (low temperature co-fired ceramic) substrates, in particular to a manufacturing method of an LTCC circuit substrate.
Background
LTCC (low temperature co-fired ceramic) technology is a high-density, multilayer wiring circuit substrate and packaging technology, and the technology uses mechanical or laser punching, steel mesh printing to fill holes, screen printing of conductors, lamination and sintering processes to realize the manufacture of circuit substrates. The LTCC technology can form a passive element inside a circuit substrate, and combines the surface mounting technology of an active device to realize the manufacture of high-density and high-integration components, so that the LTCC technology is a preferred mode for the integration and modularization of electronic devices in the future.
The sintering process of the LTCC substrate is an exothermic and endothermic reaction process, organic components in the substrate are volatilized and discharged at the stage of low temperature to 450 ℃, and crystallization and devitrification reactions are generated in the substrate at the stage of high temperature of 700-860 ℃, so that the substrate is firmly bonded. And the thermal expansion coefficients of the metal slurry and the ceramic in the substrate are different in the sintering process, so that the sintered LTCC substrate has certain warpage. However, in the subsequent assembly process of the substrate, the overall flatness of the substrate may affect the assembly effect, and particularly, the unevenness of the substrate may increase the welding void ratio and affect the grounding characteristic of the assembly.
At present, two methods are mainly used for controlling the flatness of the substrate, the first method is to reduce the layout area of a solid stratum, properly increase the thickness of the substrate, optimize the lamination parameters and the sintering curve and control the flatness of the LTCC substrate within the range of 3 μm/mm by optimizing the wiring layout design of a three-dimensional circuit. The method reduces the layout area of the solid ground layer, is generally suitable for manufacturing a low-frequency or partially low-requirement high-frequency circuit substrate, and increases the thickness of the substrate to increase the production cost.
The second method is to reduce the residual amount of the slurry filled in the through hole on the back surface of the green ceramic chip, control the protrusion height of the through hole and reduce the flatness of the substrate by a mode of stripping, punching and coating. The method can only control the flatness of the local through hole, and has little control advantage on the overall flatness of the substrate.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a manufacturing method of a circuit substrate in order to obtain higher integral flatness of an LTCC substrate, reduce the welding voidage and improve the grounding characteristic of an assembly.
In order to achieve the above object, the present invention provides a method for manufacturing an LTCC circuit board, including: setting position identification points for product appearance processing during product typesetting; reserving a process edge with a preset size outside the position identification point, and setting a hot cutting alignment point on the process edge; cutting the green ceramic body according to the hot cutting opposite sites to complete the conversion from the green ceramic body to the green ceramic body of a single circuit; carrying out hot pressing treatment on the green ceramic blanks of the single circuits, and finishing the co-firing treatment of the LTCC circuit substrate through a co-firing process; according to the LTCC circuit substrate appearance processing technology, the appearance cutting of each LTCC circuit substrate is completed, and the manufacture of the LTCC circuit substrates is realized.
According to the embodiment of the invention, the setting of the position identification point for product appearance processing during product typesetting comprises the following steps: and setting position identification points for appearance processing according to the size and the appearance of the product.
According to the embodiment of the invention, the preset size is 5-7 mm.
According to an embodiment of the present invention, wherein the thermocompression process comprises: and placing the green ceramic body of each single circuit on a hot plate, pressing a flat plate on the green ceramic body of each single circuit, and standing for a preset time.
According to the embodiment of the invention, the preset temperature of the hot plate is 75-80 ℃, and the standing time is 30-60 minutes.
According to the embodiment of the present invention, wherein the flatness of the circuit substrate is 2 μm/mm or less.
According to the technical scheme, the manufacturing method of the circuit substrate has the following beneficial effects:
according to the invention, firstly, the mismatching caused by different thermal expansion coefficients of the metal slurry and the ceramic medium in the sintering process is reduced by reserving the process edge during typesetting, and the unevenness of the substrate is reduced. Meanwhile, the hot-pressed green ceramic blank after hot cutting is subjected to hot pressing treatment, stress residues formed on the green ceramic blank in the packaging isostatic pressing process are properly released, and warping in the substrate co-firing process is reduced. The method is simple and easy to implement, has low cost, and is suitable for manufacturing LTCC substrates with various thicknesses and shapes.
Drawings
FIG. 1 schematically illustrates a flow chart of a method of fabricating a circuit substrate according to an embodiment of the invention;
fig. 2 schematically shows a schematic diagram of setting a hot-cutting alignment point on a reserved process edge according to an embodiment of the invention.
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
Fig. 1 schematically shows a flow chart of a method of manufacturing a circuit substrate according to an embodiment of the present invention.
As shown in fig. 1, the method includes operations S101 to S105.
In operation S101, a position recognition point for product appearance processing is set when the product is laid out.
According to an embodiment of the present invention, the location identification points, also referred to as fiducial points, provide a common measurable point for all steps in the substrate surface mount process.
According to an embodiment of the present invention, the position recognition point of the product outline processing includes: and is set according to the size and the shape of the product.
According to the embodiment of the invention, for example, the product is square in shape, the position identification points can be respectively arranged at four corners of the product according to the square shape of the product, and the specific arrangement positions of the four position identification points can be adjusted according to the size of the product.
In operation S102, a process edge of a predetermined size is reserved outside the position recognition point, and a hot-cutting alignment point is set on the process edge.
According to the embodiment of the invention, the preset size of the reserved process edge is 5-7 mm, and the reserved process edge is used for reducing mismatching caused by different thermal expansion coefficients of the metal slurry and the ceramic medium in the sintering process.
According to the embodiment of the invention, no set pattern is arranged on the reserved process edge.
According to an embodiment of the invention, hot-cutting alignment points are set on the process edge for cutting the green ceramic body into green ceramic bodies of individual circuits.
For example, FIG. 2 schematically illustrates a schematic diagram of setting hot-cutting alignment points on a reserved process edge according to an embodiment of the invention
As shown in fig. 2, the position recognition points 21 for product outline processing are arranged according to the size and shape of the product, and in the specific embodiment of the present application, the typesetting of each product is determined by four position recognition points, and a plurality of hot-cutting alignment points 22 for cutting the green ceramic body into green ceramic bodies of single circuits are set outside the position recognition points for product outline processing when each product is typeset along the preset direction.
According to the embodiment of the invention, the technical problem that the overall flatness of the base plate is influenced when the base plate is assembled due to the base plate warping caused by the difference of thermal expansion coefficients of metal slurry and ceramic in the base plate during sintering is solved to a great extent by reserving a process edge with a certain size outside the position identification point after the position identification point is set during product typesetting.
In operation S103, the green body is cut according to the hot-cutting pair point, and the conversion of the green body into a green body of a single circuit is completed.
According to an embodiment of the invention, completing the conversion of the green body into a green body for a single circuit comprises: processing the green ceramic chip in a membrane removing and aging mode; punching the green ceramic chip by a mechanical punching or laser punching mode; filling holes in the green ceramic chips by a steel mesh filling hole process, manufacturing a circuit on each layer of the green ceramic chips by a silk-screen printing process, and completing the conversion from the green ceramic chips to green ceramic blanks by lamination and lamination processes; and completing the conversion of the green ceramic body to the green ceramic body of a single circuit through a hot cutting process.
According to the embodiment of the invention, the de-filming and aging treatment comprises the steps of placing the green ceramic sheets on a film tearing table with the front surfaces facing downwards, tearing off the back films of the green ceramic sheets by tightly sucking the green ceramic sheets along the diagonal lines of the green ceramic sheets by vacuum, and placing the de-filmed green ceramic sheets in an aging box in an environment with the temperature of 23 ℃ and the humidity of 5% at constant temperature and humidity for aging treatment.
According to an embodiment of the present invention, the green ceramic tile is subjected to an aging process for removing deformation of the green ceramic tile during the de-filming.
According to the embodiment of the invention, the green ceramic chip is supported by the packing paper with preset size, mechanical punching or laser punching is carried out on the green ceramic chip, and the green ceramic chip is filled by a steel mesh filling process, and the process parameters comprise: the distance between the screen plates is 0.3-1 mm, the scraper movement is 0.5s, the scraper lifting is 0.5s, the table top descending is 0.5s, the scraper pressure is 0.25-0.4 MPa, and the backpressure is 0.1 MPa.
According to the embodiment of the invention, the circuit manufacturing of each layer of green ceramic chip is realized according to the silk-screen printing process, the process parameters are that the distance between the screen printing plates is 1.6-2.0 mm, the movement of the scraper is 0.5s, the ascending of the scraper is 0.5s, the descending of the table top is 0.5s, the pressure of the scraper is 0.27-0.3 MPa, the back pressure is 0.1MPa, the speed of the scraper is 10-20mm/s, the speed of the ink returning knife is 40mm/s, the printing times are 1 time, and the cycle rate of the air suction fan is 60 Hz.
According to the embodiment of the invention, the conversion from the green ceramic chip to the green ceramic blank is completed according to the processes of lamination, lamination and the like, wherein the temperature is 70 ℃, the pressure is 60bar, the pre-pressing is 10s, the vacuum pressure is 20s, the lamination is 75-80 ℃, the preheating is 20min, the pressure is 14-21MPa, and the pressure holding time is 20 min.
According to the embodiment of the invention, the ceramic blank is cut according to the hot cutting opposite sites set on the process edge by the hot cutting process rule, so that the conversion from the ceramic blank to the ceramic blank of a single circuit is completed, and the ceramic blank of the single circuit with the process edge is obtained.
Referring again to fig. 2, cutting the green body at the hot-cut pair of sites 22 includes: the graphic direction shown in fig. 2 is taken as a preset direction, the green ceramic chip is cut according to the hot cutting alignment point 22 set on the process edge in the transverse direction, the green ceramic chip can be cut into green ceramic blanks of a plurality of single circuits typeset in each transverse direction, then, the green ceramic blanks of a plurality of single circuits typeset in each transverse direction are cut according to the hot cutting alignment point 22 in the longitudinal direction, the green ceramic blanks of a plurality of single circuits typeset in each transverse direction are cut into green ceramic blanks of single circuits, and the green ceramic blanks of each single circuit after being cut all contain the process edge.
In operation S104, the green ceramic body of the single circuit is hot pressed, and the co-firing process of the LTCC circuit substrate is completed through the co-firing process.
According to the embodiment of the invention, the hot pressing treatment of the green ceramic blank of the single circuit comprises the steps of placing the green ceramic blank of the single circuit with the process edge on a hot plate at 75-85 ℃, pressing a flat stainless steel plate with the thickness of 5mm, and standing for 30-60 min.
According to an embodiment of the invention, the heat pressing process is used for releasing stress residue accumulated in the green ceramic tiles during the laminating process.
According to the embodiment of the invention, according to the co-firing process procedure of the LTCC circuit substrate, the green ceramic blank of a single circuit is placed on the porous zirconium plate to be sintered, so that the sintered green ceramic blank of the single circuit is obtained, and the co-firing treatment of the LTCC circuit substrate is completed.
According to the embodiment of the invention, after the hot-pressing treatment is carried out on the green ceramic blank after the hot cutting, the problem that the residual stress generated on the green ceramic blank in the static pressure process of the green ceramic chip causes the warping of the substrate in the co-firing process and influences the integral flatness of the circuit substrate is solved.
In operation S105, the shape cutting of each LTCC circuit substrate is completed according to the LTCC circuit substrate shape processing process, so as to implement the manufacture of the LTCC circuit substrate.
According to the embodiment of the invention, after the co-firing treatment of the green ceramic blank of the single circuit is completed according to the co-firing process rule of the LTCC circuit substrate, the appearance treatment is carried out on the LTCC circuit substrate with the process edge, and the redundant process edge of the LTCC circuit substrate is cut to realize the manufacture of the LTCC circuit substrate.
According to the embodiment of the present invention, the flatness of the entirety of the completed LTCC circuit substrate is 2 μm/mm or less.
According to the embodiment of the invention, the mismatching caused by different thermal expansion coefficients of the metal slurry and the ceramic medium in the sintering process is reduced by reserving the process edge during typesetting, and the unevenness of the substrate is reduced. Meanwhile, hot pressing treatment is carried out on the green ceramic blank after hot cutting, stress residues formed on the green ceramic blank in the packaging isostatic pressing process are properly released, and warping in the LTCC substrate co-firing process is reduced. The method is simple and easy to implement, has low cost, and is suitable for manufacturing LTCC substrates with various thicknesses and shapes.
The above embodiments are provided to further explain the objects, technical solutions and advantages of the present invention in detail, and it should be understood that the above embodiments are only examples of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. A manufacturing method of an LTCC circuit substrate comprises the following steps:
setting position identification points for product appearance processing during product typesetting;
reserving a process edge with a preset size outside the position identification point, and setting a hot cutting alignment point on the process edge;
cutting the green ceramic body according to the hot cutting alignment point to complete the conversion from the green ceramic body to the green ceramic body of a single circuit;
carrying out hot pressing treatment on the green ceramic blank of the single circuit, and finishing the co-firing treatment of the LTCC circuit substrate through a co-firing process;
and finishing the shape cutting of each LTCC circuit substrate according to the LTCC circuit substrate shape processing technology, and realizing the manufacture of the LTCC circuit substrates.
2. The method of making an LTCC circuit substrate of claim 1, wherein:
the setting of the position identification point for product appearance processing during product typesetting comprises the following steps: and setting the position identification points for appearance processing according to the size and the appearance of the product.
3. The method of making an LTCC circuit substrate of claim 1, wherein:
the preset reserved size is 5-7 mm.
4. The method of making an LTCC circuit substrate of claim 1, wherein:
the hot pressing treatment comprises the following steps: and placing the green ceramic chip of each single circuit on a hot plate, pressing a flat plate on the green ceramic chip of each single circuit, and standing for preset time.
5. The method of making an LTCC circuit substrate of claim 4, wherein:
the preset temperature of the hot plate is 75-85 ℃, and the standing time is 30-60 minutes.
6. The method of making an LTCC circuit substrate of claim 1, wherein:
the flatness of the circuit substrate is less than or equal to 2 mu m/mm.
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| CN202011282405.0A CN112739006B (en) | 2020-11-16 | 2020-11-16 | Manufacturing method of LTCC circuit substrate |
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| CN202011282405.0A CN112739006B (en) | 2020-11-16 | 2020-11-16 | Manufacturing method of LTCC circuit substrate |
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| CN113573484B (en) * | 2021-09-23 | 2022-03-25 | 西安宏星电子浆料科技股份有限公司 | Small-batch rapid manufacturing method for LTCC (Low temperature Co-fired ceramic) substrates |
| CN114040599B (en) * | 2021-11-30 | 2024-03-29 | 中国兵器工业集团第二一四研究所苏州研发中心 | Annular LTCC substrate manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104320919A (en) * | 2014-10-21 | 2015-01-28 | 中国兵器工业集团第二一四研究所苏州研发中心 | Method for manufacturing fine graphs of LTCC substrate |
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| KR100631982B1 (en) * | 2005-04-18 | 2006-10-11 | 삼성전기주식회사 | Method for manufacturing ltcc substrate having goood suface flatteness |
| CN109905981B (en) * | 2019-03-22 | 2021-05-28 | 中国电子科技集团公司第四十三研究所 | Method for manufacturing low-temperature co-fired ceramic circuit board |
| CN110139483B (en) * | 2019-04-16 | 2021-07-02 | 珠海中京电子电路有限公司 | Printed circuit board forming processing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104320919A (en) * | 2014-10-21 | 2015-01-28 | 中国兵器工业集团第二一四研究所苏州研发中心 | Method for manufacturing fine graphs of LTCC substrate |
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