CN112737628A - Radio frequency circuit and electronic device - Google Patents
Radio frequency circuit and electronic device Download PDFInfo
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- CN112737628A CN112737628A CN202011643511.7A CN202011643511A CN112737628A CN 112737628 A CN112737628 A CN 112737628A CN 202011643511 A CN202011643511 A CN 202011643511A CN 112737628 A CN112737628 A CN 112737628A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
Abstract
The application discloses radio frequency circuit and electronic equipment belongs to electronic circuit technical field. Wherein, the radio frequency circuit of two connection network deployment includes: the system comprises a first radio frequency transceiver module, a first notch network, a first antenna, a second radio frequency transceiver module, a second notch network and a second antenna; wherein: the first trap network is connected between the first radio frequency transceiver module and the first antenna and is used for suppressing radio frequency signals of a frequency band corresponding to the second radio frequency transceiver module; the second trap network is connected between the second radio frequency transceiver module and the second antenna and is used for suppressing radio frequency signals of a frequency band corresponding to the first radio frequency transceiver module. The circuit can solve the problem of interference between radio frequency signals of different frequency bands under non-independent networking.
Description
Technical Field
The application belongs to the technical field of electronic circuits, and particularly relates to a radio frequency circuit and electronic equipment.
Background
Network architecture, technology and frequency based on LTE (Long Term Evolution) cannot meet the requirements of higher rate, lower delay and larger capacity, so that the fifth generation mobile communication technology (5G for short) is produced.
Currently, 5G communication includes two modes, i.e., a stand-alone networking (SA) mode and a Non-stand-alone Networking (NSA) mode. Under the non-independent networking, the terminal and the base station communicate through dual connection of LTE and NR, that is, the LTE and the NR work simultaneously. On the basis, a 4G antenna and a 5G antenna are arranged on the terminal. However, the size of the antenna is limited by the size of the terminal, and there are cases where 4G and 5G antennas are close, and the antennas are multiplexed, which causes the radio frequency signals of 4G and 5G to interfere with each other.
Disclosure of Invention
An object of the embodiments of the present application is to provide a radio frequency circuit, which can solve the problem of interference between radio frequency signals of different frequency bands under non-independent networking.
In order to solve the technical problem, the present application is implemented as follows:
in a first aspect, an embodiment of the present application provides a radio frequency circuit, where the radio frequency circuit includes: the system comprises a first radio frequency transceiver module, a first notch network, a first antenna, a second radio frequency transceiver module, a second notch network and a second antenna; wherein:
the first notch network is connected between the first radio frequency transceiver module and the first antenna, and is used for suppressing radio frequency signals of a frequency band corresponding to the second radio frequency transceiver module;
the second notch network is connected between the second radio frequency transceiver module and the second antenna, and the second notch network is used for suppressing radio frequency signals of a frequency band corresponding to the first radio frequency transceiver module.
In a second aspect, an embodiment of the present application provides an electronic device, which includes the radio frequency circuit according to the first aspect.
In an embodiment of the present application, there is provided a radio frequency circuit, including: the antenna comprises a first radio frequency transceiver module, a first notch network, a first antenna, a second radio frequency transceiver module, a second notch network and a second antenna. Wherein: the first notch network is connected between the first radio frequency transceiver module and the first antenna and used for suppressing radio frequency signals of a frequency band corresponding to the second radio frequency transceiver module. The second trap network is connected between the second radio frequency transceiver module and the second antenna and is used for suppressing radio frequency signals of a frequency band corresponding to the first radio frequency transceiver module. In the embodiment of the present application, the first notch network may suppress the radio frequency signal in the frequency band corresponding to the second radio frequency transceiver module, and the second notch network may suppress the radio frequency signal in the frequency band corresponding to the first radio frequency transceiver module, so that interference between the radio frequency signals in different frequency bands in the non-independent networking may be reduced.
Drawings
Fig. 1 is a first schematic structural diagram of a radio frequency circuit according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a radio frequency circuit according to an embodiment of the present disclosure;
fig. 3a is a schematic diagram of a first path simulation provided in an embodiment of the present application;
fig. 3b is a schematic diagram of a frequency decibel waveform obtained from simulation of the first path according to an embodiment of the present application;
fig. 4a is a schematic diagram of a second path simulation provided in an embodiment of the present application;
fig. 4b is a schematic diagram of a frequency decibel waveform obtained from simulation of the second path according to an embodiment of the present application;
fig. 5 is a schematic structural diagram of a radio frequency circuit according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some, but not all, embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The terms first, second and the like in the description and in the claims of the present application are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It will be appreciated that the data so used may be interchanged under appropriate circumstances such that embodiments of the application may be practiced in sequences other than those illustrated or described herein, and that the terms "first," "second," and the like are generally used herein in a generic sense and do not limit the number of terms, e.g., the first term can be one or more than one. In addition, "and/or" in the specification and claims means at least one of connected objects, a character "/" generally means that a preceding and succeeding related objects are in an "or" relationship.
The dual-connection rf circuit and the electronic device provided in the embodiments of the present application are described in detail below with reference to the accompanying drawings through specific embodiments and application scenarios thereof.
As shown in fig. 1, the radio frequency circuit provided in the embodiment of the present application includes: a first radio frequency transceiver module 101, a first notch network 102, a first antenna 103, a second radio frequency transceiver module 104, a second notch network 105, and a second antenna 106; wherein:
the first notch network 102 is connected between the first radio frequency transceiver module 101 and the first antenna 103, and the first notch network 102 is configured to suppress radio frequency signals in a frequency band corresponding to the second radio frequency transceiver module 104; the second notch network 105 is connected between the second rf transceiver module 104 and the second antenna 106, and the second notch network 105 is configured to suppress the rf signals in the frequency band corresponding to the first rf transceiver module 101.
The radio frequency circuit provided by the embodiment of the application is applied to double-connection networking. In one embodiment, the Dual Connection may be an EN-DC (EUTRA-NR Dual Connection) Dual Connection. In dual connectivity, two paths are provided between the electronic device and the base station.
In the embodiment of the present application, the first rf transceiver module 101, the first notch network 102, and the first antenna 103 form a first path. The second rf transceiver module 104, the second notch network 105, and the second antenna 106 form a second path.
In the present embodiment, the first antenna 103 transmits and receives radio frequency signals on the first path. Correspondingly, the second antenna 106 transmits and receives radio frequency signals on the second path.
In one embodiment, the first rf transceiver module 101 may be a 4G rf transceiver module. Correspondingly, the second rf transceiver module 104 may be a 5G rf transceiver module. In addition, the first path is used for transmitting and receiving 4G radio frequency signals, and the second path is used for transmitting and receiving 5G radio frequency signals.
In the embodiment of the present application, the first notch network 102 has limited frequency points, and the first notch network 102 can suppress signals in the frequency range corresponding to the limited frequency points. On this basis, the frequency range corresponding to the limited frequency point of the first notch network 102 may be set to match the frequency range of the frequency band corresponding to the second rf transceiver module 104. Thus, when the rf signal of the frequency band corresponding to the second rf transceiver module 104 is conducted or radiated to the first path, the first notch network 102 can suppress the rf signal of the frequency band corresponding to the second rf transceiver module 104.
In one embodiment, as shown in FIG. 2, first notch network 102 includes a first pole 1021 and a first capacitor 1022.
The first inductor 1021 is connected between the first rf transceiver module 101 and the first antenna 103. The first capacitor 1022 is connected in parallel with the first inductor 1021.
It should be noted that the first notching network 102 may also adopt other forms of notching networks, and the embodiments of the present application are not limited thereto.
In this embodiment, the first notch network 102 has a simple structure, so that the first notch network 102 suppresses the rf signal of the frequency band corresponding to the second rf transceiver module 104 and brings less insertion loss. Thus, when the first rf transceiver module 101 transmits rf signals, the power consumption is lower, and when the first rf transceiver module 101 receives rf signals, the receiving sensitivity is higher.
In addition, on the basis of the embodiment shown in fig. 2, the first radio frequency transceiver module 101 corresponds to an uplink frequency band corresponding to a frequency band B3, and the second radio frequency transceiver module 104 corresponds to an uplink frequency band corresponding to a frequency band N78. The frequency range of the uplink frequency band corresponding to the B3 frequency band number is 1710-1785MHz, and the frequency range of the uplink frequency band corresponding to the N78 frequency band number is 3300-3800 MHz. As shown in fig. 3a and 3b, the first notch network 102 may suppress the rf signals in the frequency band corresponding to the second rf transceiver module 104, and specifically, at the point m2, the rf signals in the frequency band corresponding to the second rf transceiver module 104 are attenuated by 14 dB.
Similarly, in the embodiment of the present application, the second notch network 105 has a limited frequency point, and the second notch network 105 can suppress signals in a frequency range corresponding to the limited frequency point. On this basis, the frequency range corresponding to the limited frequency point of the second notch network 105 may be set to match the frequency range of the frequency band corresponding to the first rf transceiver module 101. Thus, when the rf signal of the frequency band corresponding to the first rf transceiver module 101 is conducted or radiated to the second path, the second notch network 105 can suppress the rf signal of the frequency band corresponding to the first rf transceiver module 101.
In one embodiment, as shown in FIG. 2, the second notch network 105 includes a second inductance 1051 and a second capacitance 1052.
The second inductor 1051 is connected between the second rf transceiver module 104 and the second antenna 106. The second capacitor 1052 is connected in parallel with the second inductor 1051.
It should be noted that the second notch network 105 may also adopt other forms of notch networks, and the embodiment of the present application is not limited thereto.
In this embodiment, the second notch network 105 has a simple structure, so that the second notch network 105 suppresses the rf signal in the frequency band corresponding to the first rf transceiver module 101 and brings less insertion loss. Thus, the second rf transceiver module 104 consumes less power when transmitting rf signals, and the second rf transceiver module 104 has higher receiving sensitivity when receiving rf signals.
In addition, on the basis of the embodiment shown in fig. 2, the first radio frequency transceiver module 101 corresponds to an uplink frequency band corresponding to a frequency band B3, and the second radio frequency transceiver module 104 corresponds to an uplink frequency band corresponding to a frequency band N78. The frequency range of the uplink frequency band corresponding to the B3 frequency band number is 1710-1785MHz, and the frequency range of the uplink frequency band corresponding to the N78 frequency band number is 3300-3800 MHz. As shown in fig. 4a and 4b, the second notch network 105 may suppress the rf signals in the frequency band corresponding to the first rf transceiver module 101, and specifically, the rf signals in the frequency band corresponding to the first rf transceiver module 101 are attenuated by 16dB at the point m 2.
In an embodiment of the present application, there is provided a radio frequency circuit, including: the antenna comprises a first radio frequency transceiver module, a first notch network, a first antenna, a second radio frequency transceiver module, a second notch network and a second antenna. Wherein: the first notch network is connected between the first radio frequency transceiver module and the first antenna and used for suppressing radio frequency signals of a frequency band corresponding to the second radio frequency transceiver module. The second trap network is connected between the second radio frequency transceiver module and the second antenna and is used for suppressing radio frequency signals of a frequency band corresponding to the first radio frequency transceiver module. In the embodiment of the present application, the first notch network may suppress the radio frequency signal in the frequency band corresponding to the second radio frequency transceiver module, and the second notch network may suppress the radio frequency signal in the frequency band corresponding to the first radio frequency transceiver module, so that interference between the radio frequency signals in different frequency bands in the non-independent networking may be reduced.
In one embodiment, the 4G rf transceiver module may be embodied as a B3 rf transceiver module. Of course, the 4G rf transceiver module may also be an rf transceiver module with other frequency band numbers, such as a B1, B2, B5, B7 or B8 frequency band number.
Wherein, the uplink frequency range of the B3 frequency segment number is 1710-1785MHz, and the downlink frequency range is 1805-1880 MHz. The upstream frequency range of the B1 frequency segment number is 1920-1980MHz, and the downstream frequency range is 2110-2170 MHz. The uplink frequency range of the B2 frequency segment number is 1850-1910MHz, and the downlink frequency range is 1930-1990 MHz. The upstream frequency range of the B5 frequency segment number is 824-849MHz, and the downstream frequency range is 869-894 MHz. The upstream frequency range of the B7 frequency segment number is 2500-2570MHz, and the downstream frequency range is 2620-2690 MHz. The uplink frequency range of the B8 frequency segment number is 880-915MHz, and the downlink frequency range is 925-960 MHz. Based on this, the uplink and downlink frequency ranges of the frequency band numbers corresponding to the 4G radio frequency transceiver modules are different, and are in a frequency division duplex system.
Correspondingly, the 5G rf transceiver module may be specifically an rf transceiver module with a frequency band number N78. Of course, the 5G rf transceiver module may also be an rf transceiver module with other frequency band numbers, such as an rf transceiver module with a frequency band number of N71, N74, N77, N78, or N79.
Wherein, the uplink frequency range of the N78 frequency segment number is 3300-. The uplink frequency range of the N71 frequency segment number is 663-698MHz, and the downlink frequency range is 617-652 MHz. The uplink frequency range of the N74 band number is 1427-1470MHz, and the downlink frequency range is 1475-1518 MHz. The uplink frequency range of the N77 frequency segment number is 3300-4200MHz, and the downlink frequency range is 3300-4200 MHz. The uplink frequency range of the N78 frequency segment number is 3300-3800MHz, and the downlink frequency range is 3300-3800 MHz. The uplink frequency range of the N79 frequency segment number is 4400-5000MHz, and the downlink frequency range is 4400-5000 MHz. Based on this, the uplink and downlink frequency ranges of the frequency band numbers corresponding to the 5G radio frequency transceiver modules are at least the same or different, that is, at least two systems, i.e., frequency division duplex and time division duplex, exist.
Based on the above, in one embodiment, as shown in fig. 2, the 4G rf transceiver module 101 includes: a 4G radio frequency transceiver 1011, a first low noise amplifier 1012, a first power amplifier 1013, and a duplexer 1014; wherein:
the transmitting end of the 4G rf transceiver 1011 is connected to the input end of the first power amplifier 1013, and the receiving end of the 4G rf transceiver 1011 is connected to the output end of the first low noise amplifier 1012.
The output terminal of the first power amplifier 1013 is connected to the first terminal of the duplexer 1014.
An input terminal of the first low noise amplifier 1012 is connected to a second terminal of the duplexer 1014.
A second end of the duplexer 1014 is connected to the first notch network 102.
In the embodiment of the present application, the standard corresponding to the 4G rf transceiver module 101 is frequency division duplex, so that bidirectional communication can be realized through the duplexer 1014.
The 4G rf transceiver 1011 is configured to generate and transmit a 4G rf signal to the first power amplifier 1013, and to analyze a 4G rf signal received from the first noise amplifier 1012.
The first low noise amplifier 1012, abbreviated as LNA, is used to amplify the radio frequency signal received from the duplexer 1014.
The first power amplifier 1013, abbreviated as PA, is used to amplify the rf signal transmitted by the 4G rf transceiver 1011.
It should be noted that, under the condition that the uplink frequency range and the downlink frequency range of the 5G radio frequency transceiver module corresponding to the frequency segment number are different, the 5G radio frequency transceiver module can also be implemented by adopting the structure of the 4G radio frequency transceiver module.
In one embodiment, as shown in fig. 2, the 5G rf transceiver module includes: a 5G radio frequency transceiver 1041, a second low noise amplifier 1042, a second power amplifier 1043, a single-pole double-throw switch 1045, a band-pass filter 1046; wherein:
the transmitting end of the 5G radio frequency transceiver 1041 is connected to the input end of the second power amplifier 1043, and the receiving end of the 5G radio frequency transceiver 1041 is connected to the output end of the second low noise amplifier 104).
The output terminal of the second power amplifier 1043 is connected to the first stationary contact of the single-pole double-throw switch 1045.
The input of the second low noise amplifier 1042 is connected to the second stationary contact of the single-pole double-throw switch 1045.
The stationary contact of the single-pole double-throw switch 1045 is connected to a first end of a band-pass filter 1046.
A second terminal of the band-pass filter 1046 is connected to the second notch network 105.
In this embodiment of the application, under the condition that the uplink frequency range and the downlink frequency range of the 5G radio frequency transceiver module corresponding to the frequency segment number are the same, that is, the standard of the 5G radio frequency transceiver module is time division duplex, bidirectional communication can be realized through the single-pole double-throw switch 1045.
The 5G rf transceiver 1041 is used for generating and transmitting a 5G rf signal to the second power amplifier 1043, and for analyzing the 5G rf signal received from the second noise amplifier 1042.
The second low noise amplifier 1042, abbreviated as LNA, is used for amplifying the radio frequency signal received from the spdt 1045 when the fixed contact of the spdt 1045 is connected to the second contact.
The second power amplifier 1043, PA for short, is configured to amplify the radio frequency signal transmitted by the 5G radio frequency transceiver 1041 when the stationary contact of the single-pole double-throw switch 1045 is connected to the first contact.
In one embodiment, as shown in fig. 5, the first capacitor 1022 is a first voltage-controlled capacitor, and the circuit further includes: a first voltage source 107 and a first processing module 108; wherein:
the input terminal of the first voltage source 107 is connected to the output terminal of the first processing module 108, and the output terminal of the first voltage source 17 is connected to the control terminal of the first capacitor 1022. The first processing module 108 is configured to control the first voltage source 107 to output a voltage matched with a frequency band corresponding to the second rf transceiver module 104 to the first capacitor 1022.
In the embodiment of the present application, the first voltage source 107 outputs different voltages to the first capacitor 1022 under the control of the first processing module 108. When the voltage received by the first capacitor 1022 changes, the capacitance of the first capacitor 1022 changes, and accordingly the limit frequency point of the first notch network 102 changes.
Based on the above, in one embodiment, the first processing module 108 may pre-store a mapping relationship between the voltage required by the first capacitor 1022 and the frequency point limited by the first trap 102. On this basis, the first processing module 108 is configured to control the first voltage source 107 to output a voltage matched with a frequency band corresponding to the second rf transceiver module 104 to the first capacitor 1022, and specifically may be:
the first processing module 108 detects the current networking mode and determines the working state of the second rf transceiver module 104 according to the current networking mode.
When the working state of the second radio frequency transceiver module 104 is busy, the first processing module 108 determines the frequency band corresponding to the second radio frequency transceiver module 104, searches for the voltage corresponding to the limited frequency point matched with the frequency band in the mapping relationship according to the determined frequency band, and controls the first voltage source 107 to output the voltage. At this time, the first notch network 102 may suppress the rf signals of the frequency band corresponding to the second rf transceiver module 104.
Correspondingly, when the working state of the second radio frequency transceiver module 104 is determined to be idle, the first processing module 108 controls the voltage of the first voltage source 107 so as to minimize the insertion loss on the first path. Specifically, the first processing module 108 performs insertion loss value detection on each group of the limited frequency points and the matched voltage in the mapping relationship in advance, and records the insertion loss value corresponding to each group of the limited frequency points and the matched voltage in the mapping relationship. On the basis, the first processing module 108 determines the voltage corresponding to the minimum insertion loss value when determining that the operating state of the second rf transceiver module 104 is idle based on the record, and controls the first voltage source 107 to output the voltage corresponding to the minimum insertion loss value.
Further, the first processing module 108 detects a current networking mode, and determines a working state of the first radio frequency transceiver module 101 according to the current networking mode.
When the operating state of the first rf transceiver module 101 is determined to be idle, the first processing module 108 may control the voltage output by the first voltage source 107 to be 0. At this time, the insertion loss on the first path is further reduced.
In another embodiment, the first processing module 108 is configured to control the first voltage source 107 to output a voltage matched with a frequency band corresponding to the second radio frequency transceiver module 104 to the first capacitor 1022, and specifically may be:
the first processing module 108 determines whether the throughput of the electronic device is less than a preset threshold; in the case of not less than the preset threshold, the first processing module 108 determines that the throughput of the electronic device is normal. Otherwise, the throughput of the electronic equipment is determined to be abnormal. At this time, the first processing module 108 detects whether the throughput of the electronic device is abnormal due to the external interference signal. If so, the strength of the external interference signal and the strength of the rf signal in the frequency band corresponding to the second rf transceiver module 104 are detected. If the strength of the external interference signal is greater than the strength of the rf signal in the frequency band corresponding to the second rf transceiver module 104, the first processing module 108 performs frequency detection on the external interference signal and controls the voltage output by the first voltage source 107, so that the frequency limit point of the first notch network 102 matches the frequency of the external interference signal. If the intensity of the external interference signal is smaller than the intensity of the rf signal in the frequency band corresponding to the second rf transceiver module 104, the voltage output by the first voltage source 107 is controlled, so that the frequency-limiting point of the first notch network 102 is matched with the frequency band corresponding to the second rf transceiver module 104. Therefore, the radio frequency circuit provided by the embodiment of the application can effectively suppress the external interference signal.
In one embodiment, as shown in fig. 5, the second capacitor 1052 is a second voltage-controlled capacitor, and the circuit further includes: a second voltage source 109 and a second processing module 110; wherein:
an input terminal of the second voltage source 109 is connected to an output terminal of the second processing module 110, and an output terminal of the second voltage source 109 is connected to a control terminal of the second capacitor 1052. The second processing module is used for controlling the second voltage source to output voltage matched with the corresponding frequency band of the first radio frequency transceiver module to the second capacitor.
In the embodiment of the present application, the functions implemented by the second processing module 110 are similar to the functions implemented by the first processing module 108, and are not described herein again.
It should be noted that, based on the embodiment shown in fig. 5, the first processing module 108 and the second processing module 110 may be integrated into the same processing module. In addition, the first voltage source 107 and the second voltage source 109 may be integrated into a same voltage source having two output terminals, one of which is connected to the control terminal of the first capacitor 1022 and the other of which is connected to the control terminal of the second capacitor 1052.
An embodiment of the present application further provides an electronic device, which includes the radio frequency circuit provided in any of the above embodiments.
In one embodiment, the electronic device may be a smartphone.
While the present embodiments have been described with reference to the accompanying drawings, it is to be understood that the invention is not limited to the precise embodiments described above, which are meant to be illustrative and not restrictive, and that various changes may be made therein by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A radio frequency circuit, characterized in that the radio frequency circuit comprises: the system comprises a first radio frequency transceiver module, a first notch network, a first antenna, a second radio frequency transceiver module, a second notch network and a second antenna; wherein:
the first notch network is connected between the first radio frequency transceiver module and the first antenna, and is used for suppressing radio frequency signals of a frequency band corresponding to the second radio frequency transceiver module;
the second notch network is connected between the second radio frequency transceiver module and the second antenna, and the second notch network is used for suppressing radio frequency signals of a frequency band corresponding to the first radio frequency transceiver module.
2. The circuit of claim 1, wherein the first notch network comprises a first inductance and a first capacitance; wherein:
the first inductor is connected between the first radio frequency transceiver module and the first antenna;
the first capacitor is connected in parallel with the first inductor.
3. The circuit of claim 1, wherein the second notch network comprises a second inductance and a second capacitance; wherein:
the second inductor is connected between the second radio frequency transceiver module and the second antenna;
the second capacitor is connected in parallel with the second inductor.
4. The circuit of claim 2, wherein the first capacitance is a first voltage-controlled capacitance, the circuit further comprising: a first voltage source and a first processing module; wherein:
the input end of the first voltage source is connected with the output end of the first processing module, and the output end of the first voltage source is connected with the control end of the first capacitor;
the first processing module is used for controlling the first voltage source to output voltage matched with the frequency band corresponding to the second radio frequency transceiver module to the first capacitor.
5. The circuit of claim 1, wherein the second capacitance is a second voltage-controlled capacitance, the circuit further comprising: a second voltage source and a second processing module; wherein:
the input end of the second voltage source is connected with the output end of the second processing module, and the output end of the second voltage source is connected with the control end of the second capacitor;
the second processing module is used for controlling a second voltage source to output voltage matched with the frequency band corresponding to the first radio frequency transceiving module to the second capacitor.
6. The circuit of claim 1, wherein the first RF transceiver module is a 4G RF transceiver module and the second RF transceiver module is a 5G RF transceiver module.
7. The circuit of claim 6, wherein the 4G radio frequency transceiver module comprises: the system comprises a 4G radio frequency transceiver, a first low noise amplifier, a first power amplifier and a duplexer; wherein:
the transmitting end of the 4G radio frequency transceiver is connected with the input end of the first power amplifier, and the receiving end of the 4G radio frequency transceiver is connected with the output end of the first low noise amplifier;
the output end of the first power amplifier is connected with the first end of the duplexer;
the input end of the first low noise amplifier is connected with the second end of the duplexer;
a second end of the duplexer is connected with the first notch network.
8. The circuit of claim 6, wherein the 5G radio frequency transceiver module comprises: the system comprises a 5G radio frequency transceiver, a second low noise amplifier, a second power amplifier, a single-pole double-throw switch and a band-pass filter; wherein:
the transmitting end of the 5G radio frequency transceiver is connected with the input end of the second power amplifier, and the receiving end of the 5G radio frequency transceiver is connected with the output end of the second low noise amplifier;
the output end of the second power amplifier is connected with the first stationary contact of the single-pole double-throw switch;
the input end of the second low noise amplifier is connected with the second stationary contact of the single-pole double-throw switch;
the static contact of the single-pole double-throw switch is connected with the first end of the band-pass filter;
the second end of the band pass filter is connected to a second notch network.
9. The circuit of claim 6, wherein the 4G RF transceiver module is a B3 RF transceiver module, and the 5G RF transceiver module is an N78 RF transceiver module.
10. An electronic device, characterized in that the electronic device comprises a radio frequency circuit according to any of claims 1-9.
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| CN202011643511.7A CN112737628A (en) | 2020-12-30 | 2020-12-30 | Radio frequency circuit and electronic device |
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| CN202011643511.7A CN112737628A (en) | 2020-12-30 | 2020-12-30 | Radio frequency circuit and electronic device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113489503A (en) * | 2021-07-01 | 2021-10-08 | 维沃移动通信有限公司 | Radio frequency architecture and electronic device |
| CN114640373A (en) * | 2022-03-21 | 2022-06-17 | Oppo广东移动通信有限公司 | Signal transmitting/receiving device, filtering control method, device, terminal and storage medium |
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| CN113489503B (en) * | 2021-07-01 | 2022-09-27 | 维沃移动通信有限公司 | Radio frequency architecture and electronic device |
| CN114640373A (en) * | 2022-03-21 | 2022-06-17 | Oppo广东移动通信有限公司 | Signal transmitting/receiving device, filtering control method, device, terminal and storage medium |
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Application publication date: 20210430 |