CN112736158A - 一种高性能硅基锗探测器及其制备方法 - Google Patents
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Abstract
本发明涉及一种高性能硅基锗探测器及其制备方法，由下至上包括作为探测器制作初始材料包括硅材料(1)、SiO2层(2)和锗层(3)的衬底、作为肖特基接触的金属电极(4)和覆盖于锗层(3)和金属电极(4)上的石墨烯薄膜(5)。本发明通过光子晶体结构设计，使～200nm的超薄锗层结构在1310nm入射光处实现了超高吸收，量子效率不受限于吸收层的厚度；制作工艺无需掺杂，大大简化了工艺成本及制造成本，具有良好的市场应用前景。
Description
技术领域
本发明属于半导体领域，特别涉及一种高性能硅基锗探测器及其制备方法。
背景技术
大数据时代的信息传输对带宽和功耗的要求越来越高，传统电互联方式由于受限于电子传输速率的极限已经不能满足日益增长的需求，基于硅光集成的光互连技术由于其高速、低功耗、低串扰和可大规模集成等特点成为理想的数据传输和交互方案。作为硅光集成芯片的核心组件之一，高响应度、高带宽的面接收型硅基锗探测器一直是研究的热点。而探测器固有的带宽和量子效率的矛盾关系一直是亟待解决的重点，为在不牺牲带宽的前提下提高器件响应度，科研人员进行了很多尝试，其中，具有的代表性的是RCE(谐振腔增强)型探测器和等离子体增强型探测器。虽然这两种方案都在一定程度上提高了器件的响应度，但RCE型探测器的谐振腔设计增加了工艺复杂度，等离子体增强型探测器由于引入了金属会给器件带来额外的热负荷。
近年来，纳米结构光学的崛起为解决光电探测器带宽和量子效率的矛盾提供了新思路。2017年，美国加州大学戴维斯分校Yang Gao等人将捕获光子的微孔结构应用于硅探测器上，在980-1000nm响应处获得了近10倍的效率提升。次年，同课题组将此种微孔结构应用于本征区为2微米的Ge-on-Si探测器中，在1200-1800nm范围内对探测器响应度提升，在1550nm处实现了0.91A/W的响应度。与此同时，国内的研究团队也积极开展相关研究。2019年，武汉华中科技大学国家光电子实验室夏金松课题组将微孔结构应用于本征区为350nm的Ge-on-Si探测器上，器件在1550nm处实现了70％以上的吸收和300％以上的量子效率提升，并在20Gbps的信号速率下正常工作。
以上的研究都表明了纳米光学结构与面接收型探测器的兼容性以及对探测器响应度的提升作用，但上述研究都未能在超薄本征区上实现通信波段器件的超高吸收。因此，利用新的原理、新的结构在超薄本征区上实现高响应度、高带宽的面接收型探测器是必要的。
发明内容
本发明所要解决的技术问题是提供一种高性能硅基锗探测器及其制备方法，解决现有技术中高响应度和高带宽相互制约的问题。
本发明提供了一种高性能硅基锗探测器，由下至上由下至上包括作为探测器制作初始材料包括硅材料、SiO2层和锗层的衬底、作为肖特基接触的金属电极和覆盖于锗层和金属电极上的石墨烯薄膜。
所述锗层为周期性空气孔阵列。
所述金属电极为Au电极，与Ge形成肖特基接触。
所述石墨烯薄膜为单层石墨烯。
本发明还提供了一种高性能硅基锗探测器的制备方法，包括如下步骤：
(1)提供衬底GOI，作为探测器制作初始材料；
(2)通过电子束曝光以及ICP刻蚀工艺在锗层上制备周期性空气孔阵列；
(3)通过光刻以及刻蚀工艺形成器件台面结构；
(4)通过光刻以及电子束蒸发工艺形成金属电极；
(5)通过CVD生长或机械剥离形成石墨烯薄膜，并将其转移到器件上。
(6)通过光刻以及等离子体刻蚀方法定义石墨层薄膜的图案。
有益效果
本发明通过光子晶体结构设计，使～200nm的超薄锗层结构在1310nm入射光处实现了超高吸收，量子效率不受限于吸收层的厚度；制作工艺无需掺杂，大大简化了工艺成本及制造成本；采用平面制作工艺，且器件吸收区为空气孔阵列，大大降低了器件的电容；利用单层石墨烯的快速输运载流子的特性，以及石墨烯与锗接触会形成类肖特基结，利于光生载流子的快速分开，进一步提高器件响应度和响应速度，具有良好的市场应用前景。
附图说明
图1为本发明探测器的结构示意图。
图2为本发明探测器的制备流程示意图。
图3为有无微结构超薄锗层的吸收率对比(FDTD仿真结果)。
图4为有无微结构超薄锗层的理想条件下响应度对比(FDTD仿真结果)。
具体实施方式
下面结合具体实施例，进一步阐述本发明。应理解，这些实施例仅用于说明本发明而不用于限制本发明的范围。此外应理解，在阅读了本发明讲授的内容之后，本领域技术人员可以对本发明作各种改动或修改，这些等价形式同样落于本申请所附权利要求书所限定的范围。
实施例1
如图1所示，本实施例提供了一种高性能硅基锗探测器，由下至上包括作为探测器制作初始材料包括硅材料1、SiO2层2和锗层3的GOI衬底、作为肖特基接触的金属电极4和覆盖于锗层3和金属电极4上的石墨烯薄膜5。所述锗层3为周期性空气孔阵列。所述金属电极4为Au电极，与Ge形成肖特基接触。所述石墨烯薄膜5为单层石墨烯。
本实施例还提供了一种高性能硅基锗探测器的制备方法，包括如下步骤：
(1)提供GOI衬底(顶层Ge为200nm左右)，作为探测器制作初始材料；
(2)通过电子束曝光以及ICP刻蚀工艺在锗层3上制备周期性空气孔阵列；
(3)通过光刻以及刻蚀工艺形成器件台面结构；
(4)通过光刻以及电子束蒸发工艺形成金属电极4；
(5)通过CVD生长或机械剥离形成石墨烯薄膜5，并将其转移到器件上。
(6)通过光刻以及等离子体刻蚀方法定义石墨层薄膜5的图案。
通过探针台，在两个金属电极4上施加偏压。外部1310nm光信号由顶部入射到器件吸收区(即锗层3)产生光生载流子，光生载流子在施加的电场作用下被分开，电子向阳极漂移，空穴向阴极漂移。此外石墨烯薄膜5与锗层3形成的电势差也会快速分开光生载流子，被电极收集的载流子在外电路形成电流，完成光信号到电信号的转换。
由图3可知，在超薄锗层(～200nm)上设计周期性空气孔阵列的结构，通过调整结构参数可在1310nm处实现>95％的超高吸收率，比无特殊结构设计的增强约10倍。以1310nm入射光为光源，仿真了有无此结构的锗层中光生载流子情况，依据理想条件下所有光生载流子均被收集得到如图4所示的响应度曲线对比，可看到此结构设计对探测器响应度的大幅提升。
Claims (6)
1.一种高性能硅基锗探测器，其特征在于：由下至上包括作为探测器制作初始材料包括硅材料(1)、SiO2层(2)和锗层(3)的衬底、作为肖特基接触的金属电极(4)和覆盖于锗层(3)和金属电极(4)上的石墨烯薄膜(5)。
2.根据权利要求1所述的探测器，其特征在于：所述衬底为GOI衬底或SOI外延Ge材料的衬底。
3.根据权利要求1所述的探测器，其特征在于：所述锗层(3)为周期性空气孔阵列。
4.根据权利要求1所述的探测器，其特征在于：所述金属电极(4)为Au电极，与Ge形成肖特基接触。
5.根据权利要求1所述的探测器，其特征在于：所述石墨烯薄膜(5)为单层石墨烯。
6.一种高性能硅基锗探测器的制备方法，包括如下步骤：
(1)提供衬底GOI，作为探测器制作初始材料；
(2)通过电子束曝光以及ICP刻蚀工艺在锗层(3)上制备周期性空气孔阵列；
(3)通过光刻以及刻蚀工艺形成器件台面结构；
(4)通过光刻以及电子束蒸发工艺形成金属电极(4)；
(5)通过CVD生长或机械剥离形成石墨烯薄膜(5)，并将其转移到器件上。
(6)通过光刻以及等离子体刻蚀方法定义石墨层薄膜(5)的图案。
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| CN113299775A (zh) * | 2021-05-14 | 2021-08-24 | 北京工业大学 | 一种高速短波通信探测器 |
| CN115207150A (zh) * | 2022-07-21 | 2022-10-18 | 北京工业大学 | 一种全通信波段覆盖的高速光电探测器 |
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