CN112735941A - ONO film thickness control method for mass production of wafers, terminal equipment and storage medium - Google Patents
ONO film thickness control method for mass production of wafers, terminal equipment and storage medium Download PDFInfo
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- CN112735941A CN112735941A CN202011535772.7A CN202011535772A CN112735941A CN 112735941 A CN112735941 A CN 112735941A CN 202011535772 A CN202011535772 A CN 202011535772A CN 112735941 A CN112735941 A CN 112735941A
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- ono film
- wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
Abstract
The invention discloses an ONO film thickness control method for mass production of wafers, which comprises the following steps: forming an oxide layer on a substrate; depositing a nitride layer and etching by a wet method; growing polycrystalline silicon; etching to remove the polysilicon on the back of the wafer; an ONO film is grown. According to the invention, a wafer back etching process is added before ONO deposition, and polysilicon grown on the wafer back at the earlier stage is etched, so that the thickness of the wafer back is consistent with that of a comparison wafer and a control wafer, films on the back surfaces of the comparison wafer and the control wafer are consistent, and further a mass production wafer below each wafer and a residual production wafer are subjected to the same heat radiation, so that the thickness of the grown ONO is consistent, the performance reduction of devices caused by the thickness deviation of the ONO is avoided, the uniformity of the mass production wafer is improved, and the yield of mass production devices is improved.
Description
Technical Field
The invention relates to the field of integrated circuit production and manufacturing, in particular to an ONO film thickness control method for mass production of wafers. The invention also relates to a terminal device for executing the ONO film thickness control method for the mass production wafer and a computer storage medium for realizing the steps in the ONO film thickness control method for the mass production wafer.
Background
The ONO film is a film formed by stacking three layers, i.e., an oxide layer, a nitride layer, and an oxide layer, and is generally applied to a gate dielectric layer of a gate structure. The nitride layer and the top oxide layer of the ONO layer are typically formed by a furnace Low Pressure Chemical Vapor Deposition (LPCVD) process, and the bottom oxide layer is typically formed by a thermal oxidation process. The ONO film is typically formed on a wafer composed of a semiconductor substrate, the furnace tube typically includes a tube wall and a process chamber surrounded by the tube wall, and a plurality of wafers can be placed in the furnace tube to simultaneously grow corresponding films on the surfaces of the plurality of wafers.
The ONO three-layer film is a vital technology in products, and the thickness and the quality of the ONO three-layer film directly influence the performance of devices. When the wafer is prepared in the furnace tube, because dummy (contrast sheet)/monitor wafer (control sheet) back films are different from each other, the heat radiation of the back surface of the wafer above the mass production wafer below the dummy/monitor in the furnace tube is different from the heat radiation of the rest wafers, so that the thickness deviation of the ONO film of the wafer at the position is caused, as shown in the following figure 1;
in order to improve the ONO film thickness deviation of the wafers produced in mass mode below the dummy/monitor wafer, the traditional method is to adjust the process parameters such as temperature and pressure in the furnace tube and reduce the difference between the thickness of the wafers produced in mass mode and that of the wafers produced in mass mode as much as possible, but the improvement of the process is not obvious, and the variation of the temperature easily causes the thickness deviation or uniformity variation of the wafers at other positions in the furnace tube and affects the performance of the device.
Disclosure of Invention
In this summary, a series of simplified form concepts are introduced that are simplifications of the prior art in this field, which will be described in further detail in the detailed description. This summary of the invention is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
The technical problem to be solved by the invention is to provide an ONO film thickness control method capable of avoiding thickness deviation of an ONO film of a lower-yield wafer caused by different (different heat radiation) films on the back surfaces of dummy (contrast wafer)/monitor wafer (control wafer).
Correspondingly, the invention also provides terminal equipment for executing the ONO film thickness control method for the mass production wafers and a computer storage medium for realizing the steps in the ONO film thickness control method for the mass production wafers.
In order to solve the above technical problem, the present invention provides an ONO film thickness control method for mass production of wafers, comprising the steps of:
s1, forming an oxide layer on the substrate;
s2, depositing a nitride layer and etching by a wet method;
s3, growing polycrystalline silicon;
s4, etching to remove the polysilicon on the back of the wafer;
s5, growing an ONO film.
Optionally, the method for controlling the thickness of the ONO film for mass production of wafers is further improved, and the thickness of the grown polysilicon is in the range of 500-1500 angstroms.
Optionally, the method for controlling the thickness of the ONO film for mass production of wafers is further improved, and the thickness of the grown polysilicon is 1080 angstroms.
Optionally, the method for controlling the thickness of the ONO film for mass production of wafers can be applied to the manufacture of the ONO film on a nor flash process platform.
Optionally, the method for controlling the thickness of the ONO film for mass production of wafers can be applied to the manufacture of the ONO film on a nand flash process platform.
Optionally, the method for controlling the thickness of the ONO film for mass production of wafers can be used in the manufacture of the ONO film of the SONOS memory process platform.
In order to solve the above technical problem, the present invention provides a terminal apparatus for performing the method for controlling the thickness of the ONO film for mass production of wafers according to any one of the above aspects.
In order to solve the above technical problem, the present invention provides a computer-readable storage medium storing a computer program, wherein the computer program, when executed by a processor, implements any one of the steps of the method for controlling the thickness of an ONO film for a mass-produced wafer.
According to the invention, a back etching process is added before ONO deposition, and polysilicon grown on the back at the earlier stage is etched, so that the thickness of the back is consistent with that of a dummy wafer/monitor wafer, the films on the back of the dummy wafer/monitor wafer are consistent, and further mass production wafers below the dummy wafer/monitor wafer are subjected to the same heat radiation with the rest production wafers, so that the thickness of the grown ONO is consistent, the reduction of the performance of a device caused by the thickness deviation of the ONO is avoided, the uniformity of the mass production wafers is improved, and the yield of the mass production device is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention, are incorporated in and constitute a part of this specification. The drawings are not necessarily to scale, however, and may not be intended to accurately reflect the precise structural or performance characteristics of any given embodiment, and should not be construed as limiting or restricting the scope of values or properties encompassed by exemplary embodiments in accordance with the invention. The invention will be described in further detail with reference to the following detailed description and accompanying drawings:
FIG. 1 is a statistical view of ONO film thickness of a wafer produced by a lot under a control wafer.
FIG. 2 is a schematic diagram of the dummy/monitor wafer position.
FIG. 3 is a schematic flow chart of an embodiment of the present invention.
Fig. 4 is a schematic structural diagram of the first embodiment of the present invention.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and technical effects of the present invention will be fully apparent to those skilled in the art from the disclosure in the specification. The invention is capable of other embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the general spirit of the invention. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict. The following exemplary embodiments of the present invention may be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. It is to be understood that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the technical solutions of these exemplary embodiments to those skilled in the art.
Like reference numerals refer to like elements throughout the drawings. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. Further, it will be understood that, although the terms first, second, etc. may be used herein to describe various elements, parameters, components, regions, layers and/or sections, these elements, parameters, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, parameter, component, region, layer or section from another element, parameter, component, region, layer or section. Thus, a first element, parameter, component, region, layer or section discussed below could be termed a second element, parameter, component, region, layer or section without departing from the teachings of exemplary embodiments according to the present invention.
A first embodiment;
as shown in fig. 3 and fig. 4, the present invention provides a method for controlling ONO film thickness for mass production of wafers, comprising the following steps:
s1, forming an oxide layer on the substrate;
s2, depositing a nitride layer and etching by a wet method;
s3, growing polycrystalline silicon;
s4, etching to remove the polysilicon on the back of the wafer;
s5, growing an ONO film.
A second embodiment;
the invention provides an ONO film thickness control method for mass production of wafers, which comprises the following steps:
s1, forming an oxide layer on the substrate;
s2, depositing a nitride layer and etching by a wet method;
s3, growing polysilicon with the thickness ranging from 500 angstroms to 1500 angstroms, and preferably with the thickness of 1080 angstroms;
s4, etching to remove the polysilicon on the back of the wafer;
s5, growing an ONO film.
Alternatively, the method for controlling the thickness of the ONO film for mass production of wafers according to the first or second embodiment may be applied to the production of the ONO film on a nor flash process platform.
Alternatively, the method for controlling the thickness of the ONO film for mass production of wafers according to the first or second embodiment can be applied to the production of the ONO film on a nand flash process platform.
Alternatively, the method for controlling the thickness of the ONO film for mass production of wafers according to the first or second embodiment can be used in the ONO film manufacturing of a SONOS memory process platform.
A third embodiment;
an end device, such as a diffusion furnace device for semiconductor manufacturing, according to the present invention is used to perform the method for controlling the thickness of the ONO film for mass production of wafers according to any one of the first and second embodiments.
A fourth embodiment;
the present invention provides a computer-readable storage medium storing a computer program, wherein the computer program, when executed by a processor, implements the steps of the method for controlling the thickness of an ONO film for a mass-produced wafer according to any one of the first and second embodiments. The computer readable storage medium is integrated into a control system of a semiconductor manufacturing diffusion furnace, for example.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The present invention has been described in detail with reference to the specific embodiments and examples, but these are not intended to limit the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.
Claims (8)
1. An ONO film thickness control method for mass production of wafers is characterized by comprising the following steps:
s1, forming an oxide layer on the substrate;
s2, depositing a nitride layer and etching by a wet method;
s3, growing polycrystalline silicon;
s4, etching to remove the polysilicon on the back of the wafer;
s5, growing an ONO film.
2. The method according to claim 1, wherein the ONO film thickness control method for mass-production wafers comprises: the thickness of the grown polysilicon is in the range of 500 angstroms to 1500 angstroms.
3. The method according to claim 2 for controlling the thickness of the ONO film for mass production of wafers, characterized in that: the thickness of the grown polysilicon was 1080 angstroms.
4. The method according to claim 1, wherein the ONO film thickness control method for mass-production wafers comprises: the method can be applied to the ONO film manufacturing of a nor flash process platform.
5. The method according to claim 1, wherein the ONO film thickness control method for mass-production wafers comprises: the method can be applied to the manufacturing of the ONO film of the nand flash process platform.
6. The method according to claim 1, wherein the ONO film thickness control method for mass-production wafers comprises: which can be used in the manufacture of an ONO film for a SONOS memory process platform.
7. A terminal device characterized by: for performing the method of ONO film thickness control for mass production wafers according to any one of claims 1 to 6.
8. A computer-readable storage medium storing a computer program, characterized in that: the computer program, when executed by a processor, implements the steps of the method for ONO film thickness control for mass production of wafers of any one of claims 1-6.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011535772.7A CN112735941A (en) | 2020-12-23 | 2020-12-23 | ONO film thickness control method for mass production of wafers, terminal equipment and storage medium |
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| CN202011535772.7A CN112735941A (en) | 2020-12-23 | 2020-12-23 | ONO film thickness control method for mass production of wafers, terminal equipment and storage medium |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113506756A (en) * | 2021-06-28 | 2021-10-15 | 上海华虹宏力半导体制造有限公司 | HTO oxide layer process method in ONO process |
| CN115881529A (en) * | 2023-02-06 | 2023-03-31 | 合肥新晶集成电路有限公司 | Wet etching method, device, system, computer equipment and medium |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105870034A (en) * | 2016-05-11 | 2016-08-17 | 上海华虹宏力半导体制造有限公司 | Polycrystalline silicon furnace tube deposition thickness monitoring device and method |
| CN109300781A (en) * | 2018-09-11 | 2019-02-01 | 上海华虹宏力半导体制造有限公司 | The manufacturing method of ONO film layer |
-
2020
- 2020-12-23 CN CN202011535772.7A patent/CN112735941A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105870034A (en) * | 2016-05-11 | 2016-08-17 | 上海华虹宏力半导体制造有限公司 | Polycrystalline silicon furnace tube deposition thickness monitoring device and method |
| CN109300781A (en) * | 2018-09-11 | 2019-02-01 | 上海华虹宏力半导体制造有限公司 | The manufacturing method of ONO film layer |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113506756A (en) * | 2021-06-28 | 2021-10-15 | 上海华虹宏力半导体制造有限公司 | HTO oxide layer process method in ONO process |
| CN113506756B (en) * | 2021-06-28 | 2024-04-23 | 上海华虹宏力半导体制造有限公司 | HTO oxide layer process method in ONO process |
| CN115881529A (en) * | 2023-02-06 | 2023-03-31 | 合肥新晶集成电路有限公司 | Wet etching method, device, system, computer equipment and medium |
| CN115881529B (en) * | 2023-02-06 | 2023-05-12 | 合肥新晶集成电路有限公司 | Wet etching method, device, system, computer equipment and medium |
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