CN112725888A - Method for preparing high-quality semiconductor single crystal film by using array buffer layer - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000013078 crystal Substances 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 59
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- 238000004140 cleaning Methods 0.000 claims abstract description 12
- 239000010408 film Substances 0.000 claims description 29
- 238000000151 deposition Methods 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 22
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 238000002360 preparation method Methods 0.000 claims description 15
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 12
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000004549 pulsed laser deposition Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 6
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 125000002524 organometallic group Chemical group 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 2
- 229940112669 cuprous oxide Drugs 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical compound [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 23
- 239000013077 target material Substances 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000001534 heteroepitaxy Methods 0.000 description 2
- 238000001657 homoepitaxy Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000001996 bearing alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/06—Epitaxial-layer growth by reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
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- Chemical Kinetics & Catalysis (AREA)
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Abstract
The invention relates to a method for preparing a high-quality semiconductor single crystal film by utilizing an array buffer layer, which comprises the following steps of: step 1, cleaning a substrate; step 2, preparing an array buffer layer; and 3, preparing the semiconductor film. The target material particles sputtered by the invention have higher energy and better adhesion with the substrate, can form a film at lower temperature even room temperature, and can realize the deposition of the film on some special substrate materials at low temperature.
Description
Technical Field
The invention relates to the field of preparation and application of semiconductor thin film materials, in particular to a method for preparing a high-quality semiconductor single crystal thin film by utilizing an array buffer layer.
Background
With the development of microelectronic technology, microelectronic devices based on semiconductor materials have been used in human society. The high-power phased array photoelectric detection radar large on a warship and the microprocessor chip small in a mobile phone are all composed of microelectronic devices made of semiconductor materials. The pursuit of high performance microelectronic devices has prompted the development of semiconductor materials. The earliest semiconductor material used in large scale is semiconductor silicon, and with the improvement of device integration, the device is gradually miniaturized, and the defects of silicon material are gradually exposed. Because of the small forbidden band width and low breakdown field strength of silicon semiconductors, it is difficult to apply the silicon semiconductors in high frequency, high power and photoelectric fields. For this reason, new semiconductor materials, such as gallium arsenide, silicon carbide, gallium nitride, zinc oxide, gallium oxide, etc., have been developed to meet higher performance requirements. Compared with the traditional silicon material, the material has the characteristics of large forbidden band width, high breakdown field strength and high carrier mobility, is suitable for preparing high-frequency, high-speed and high-power devices, and has wide application in the photoelectric field because most of the devices have direct band gaps. Some of the wide bandgap semiconductor materials described above have been commercially implemented in high power microelectronic devices.
The production of high-performance electronic devices is based on high-quality semiconductor materials. At present, the preparation conditions of the wide bandgap semiconductor single crystal material are harsh, and the large-scale production is difficult, so that the application of the thin film material is more. The high-quality wide-bandgap semiconductor thin film material is prepared by an epitaxial growth method and is divided into a homoepitaxy method and a heteroepitaxy method. Due to the manufacturing or price of bulk materials, homoepitaxy is not always feasible, so heteroepitaxy is generally selected to manufacture wide bandgap semiconductor thin film materials, i.e., epitaxial growth is performed on substrates of different materials. However, the lattice constants of the epitaxial material and the hetero-single crystal substrate are different, and lattice mismatch exists, so that it is difficult to obtain a high-quality epitaxial semiconductor film, and therefore, an improved preparation method is urgently needed to solve the problem of low crystallization quality of the hetero-epitaxial film.
In summary, in order to solve the problem that a high-quality semiconductor single crystal film is difficult to prepare in the preparation of a high-performance electronic device, the invention provides a method for inserting an array buffer layer between a semiconductor film material and a substrate, and the method can effectively reduce the influence of lattice mismatch on the growth of the material and improve the crystallization quality of the semiconductor film material prepared by a hetero-epitaxial method.
Disclosure of Invention
The invention designs a method for preparing a high-quality semiconductor single crystal film by using an array buffer layer, which solves the technical problem that the existing semiconductor film has low crystallization quality.
In order to solve the technical problems, the invention adopts the following scheme:
a method for preparing a high-quality semiconductor single crystal thin film by using an array buffer layer comprises the following steps: step 1, cleaning a substrate; step 2, preparing an array buffer layer; and 3, preparing the semiconductor film.
Preferably, the preparation of the array buffer layer in step 2 is performed by laser molecular beam epitaxy, and specifically includes the following steps: step 21, mounting a semiconductor target on a target holder of a laser molecular beam epitaxy system, then covering a clean porous anodic alumina template on the substrate cleaned in the step 1, then fixing the substrate on a sample holder of a growth chamber together, vacuumizing to a certain vacuum degree, heating the substrate to a certain temperature, and then introducing sputtering gas to keep the pressure of the growth chamber at a certain pressure; and step 22, depositing for a certain time under the condition of pulse laser with certain power, taking out the substrate and the porous anodic alumina template after deposition is finished, and removing the covered porous anodic alumina template to obtain the semiconductor array buffer layer with certain thickness.
Preferably, the certain temperature in step 21 is 20 ℃ to 800 ℃; the vacuum chamber pressure in step 21 is maintained at 1 x 10-3Pa-30 Pa; the sputtering gas in the step 21 is oxygen or a mixed gas of oxygen and argon; the pressure in step 21 is 5 x 10-2Pa。
Preferably, the template in step 22 is a porous anodized aluminum template; the array in step 22 is a semiconductor array buffer layer with a thickness of 1-10 nm; the time described in step 22 is 95 seconds or more.
Preferably, the semiconductor thin film prepared in step 3 is prepared by pulsed laser deposition, comprising the steps of:
step 31, fixing the substrate with the semiconductor array buffer layer obtained in the step 2 on a sample table of a growth chamber, vacuumizing to a certain vacuum degree, heating the substrate to a certain temperature, and introducing sputtering gas; adjusting a gate valve to keep the pressure of the vacuum chamber at a certain pressure;
and 32, depositing for a certain time under the condition of pulse laser with certain power to obtain the high-quality semiconductor film with a certain thickness.
Preferably, the temperature in step 31 is 20 ℃ to 800 ℃; the vacuum chamber pressure in step 31 is maintained at 1 x 10-3Pa-30 Pa; the sputtering gas in the step 31 is oxygen or a mixed gas of oxygen and argon; the pressure in step 31 is 5 x 10-2Pa。
Preferably, the deposition is performed for 20 min to 360 min under the condition of the pulsed laser with certain power in the step 32; the power was 300 mW.
Preferably, the step 1 of cleaning the substrate specifically comprises the following steps: putting the substrate into a beaker, ultrasonically cleaning the substrate for 5 minutes by using acetone, alcohol and deionized water in sequence to remove organic impurities and residual ions on the substrate, and then drying the substrate by using nitrogen for later use; the substrate is made of single crystal sapphire, single crystal silicon, single crystal gallium oxide, silicon carbide and quartz glass.
Preferably, the method for preparing the array buffer layer in step 2 further comprises: magnetron sputtering deposition, pulsed laser deposition, molecular beam epitaxy, plasma enhanced chemical vapor deposition or organometallic chemical vapor deposition methods; step 3 other methods of preparing a semiconductor thin film further include: magnetron sputtering deposition, pulsed laser deposition, molecular beam epitaxy, plasma enhanced chemical vapor deposition, photo-assisted or plasma-assisted organometallic chemical vapor deposition, and the like.
The semiconductor single crystal film is prepared by the method, the light transmittance of the semiconductor film is up to more than 95%, and the half-peak width is as low as 0.076 degrees;the semiconductor is Ga2O3Zinc oxide, tin dioxide, hafnium oxide, cuprous oxide, aluminum nitride, gallium nitride, boron nitride, or indium nitride.
The method for preparing the high-quality semiconductor single crystal film by utilizing the array buffer layer has the following beneficial effects:
(1) according to the invention, the array buffer layer is introduced as the middle layer, so that the stress and dislocation caused by thermal mismatch and lattice mismatch are reduced, and the crystallization quality of the film can be obviously improved.
(2) The target material particles sputtered by the invention have higher energy and better adhesion with the substrate, can form a film at lower temperature even room temperature, and can realize the deposition of the film on some special substrate materials at low temperature.
Drawings
FIG. 1 shows the addition of Ga in the present invention2O3Preparation of Ga by array buffer layer2O3A graph of the uv-vis optical transmittance of the film sample;
FIG. 2 shows the addition of Ga in the present invention2O3Preparation of Ga by array buffer layer2O3Thin film and direct preparation of Ga2O3XRD pattern of the film sample;
FIG. 3 shows the preparation of Ga according to the present invention2O3Scanning electron microscopy of the array buffer layer.
Detailed Description
With reference to FIGS. 1 to 3, Ga is a semiconductor material2O3The invention is further illustrated by way of example:
as shown in FIG. 1, samples No. 1, 2, 3 and 4 correspond to Ga prepared at 200 deg.C, 400 deg.C, 600 deg.C and 800 deg.C, respectively2O3A film; fig. 1 shows that the bandwidth becomes larger as the temperature increases.
As shown in FIG. 2, gallium oxide has three characteristic peaks, namely a (-201) peak near 19 °, a (-402) peak near 38 °, and a (-603) peak near 60 °. In the vicinity of 21 ° and 42 °, peaks of the sapphire substrate are present.
As shown in fig. 3, the dot-shaped protrusions are gallium oxide arrays, and the arrays are arranged in order and have regular intervals.
Preparation of high-quality Ga by utilizing array buffer layer2O3A method of making a film comprising the steps of: step 1, cleaning a substrate; step 2, preparing an array buffer layer; step 3 preparation of Ga2O3A film.
The preparation of the array buffer layer in the step 2 is carried out by laser molecular beam epitaxy, and the method specifically comprises the following steps: step 21 of converting Ga2O3Mounting a target material on a target support of a laser molecular beam epitaxy system, covering a clean porous anodic alumina template on the substrate cleaned in the step (1), fixing the porous anodic alumina template and the substrate on a sample support of a growth chamber, vacuumizing to a certain vacuum degree, heating the substrate to a certain temperature, introducing sputtering gas, and adjusting a gate valve to keep the pressure of the growth chamber at a certain pressure; step 22, depositing for a certain time under the condition of pulse laser with a certain power, taking out the substrate and the porous anodic alumina template after deposition is finished, and removing the covered porous anodic alumina template to obtain Ga with a certain thickness2O3An array buffer layer.
The certain temperature in the step 21 is 20-800 ℃; the pressure of the vacuum chamber in step 21 is maintained at 1 x 10-3Pa-30 Pa; sputtering gas in the step 21 is oxygen or mixed gas of oxygen and argon; the pressure in step 21 is 5 x 10-2Pa. Preferably, the template in step 22 is a porous anodized aluminum template;
the array in step 22 is Ga 1-10 nm thick2O3An array buffer layer; the time in step 22 is 95 seconds.
Preparation of Ga in step 32O3The film is prepared by pulsed laser deposition and comprises the following steps: step 31 of adding Ga to the Ga-bearing alloy obtained in step 22O3Fixing the substrate of the array buffer layer on a sample table of a growth chamber, vacuumizing to a certain vacuum degree, heating the substrate to a certain temperature, and introducing sputtering gas; adjusting a gate valve to keep the pressure of the vacuum chamber at a certain pressure; step 32, depositing for a certain time under the condition of pulse laser with a certain power to obtain high-quality Ga with a certain thickness2O3A film.
The temperature in step 31 is 20-800 ℃; or/and the pressure of the vacuum chamber in step 31 is kept at 1 x 10-3Pa-30 Pa; or/and the sputtering gas in the step 31 is oxygen or a mixed gas of oxygen and argon; the pressure in step 31 is 5 x 10-2Pa。
Depositing for 20 min-360 min under the condition of pulse laser with certain power in the step 32; the power was 300 mW.
Step 1 the specific steps of cleaning the substrate are as follows: putting the substrate into a beaker, ultrasonically cleaning the substrate for 5 minutes by using acetone, alcohol and deionized water in sequence, and then drying the substrate by using nitrogen for later use; or/and the substrate is made of single crystal sapphire, single crystal silicon, single crystal gallium oxide, silicon carbide and quartz glass.
The method for preparing the array buffer layer in the step 2 further comprises the following steps: magnetron sputtering deposition, pulsed laser deposition, molecular beam epitaxy, plasma enhanced chemical vapor deposition or organometallic chemical vapor deposition methods; alternatively, step 3 preparation of Ga2O3Other methods of thin films include: magnetron sputtering deposition, pulsed laser deposition, molecular beam epitaxy, plasma enhanced chemical vapor deposition, photo-assisted or plasma-assisted organometallic chemical vapor deposition, and the like.
The first embodiment is as follows:
the present embodiment is to prepare high quality Ga2O3The method for preparing the single crystal film comprises the following steps:
firstly, cleaning a substrate, putting the sapphire substrate into a beaker, ultrasonically cleaning for 5 minutes by sequentially utilizing acetone, alcohol and deionized water, and drying by using nitrogen.
Second, preparing Ga by utilizing laser molecular beam epitaxy2O3An array buffer layer.
Thirdly, preparing Ga by utilizing laser molecular beam epitaxy2O3The film comprises the following specific steps:
firstly, the Ga-bearing material obtained in the second step2O3Fixing the substrate of the array buffer layer on a sample table of a growth chamber, heating the substrate with the array buffer layer to 400 ℃, and introducing oxygen; the gate valve was adjusted so that the pressure in the vacuum chamber was maintained at 10-2Pa is unchanged.
The second embodiment is as follows:
the present embodiment differs from the first embodiment in that: and the temperature of the substrate in the second step is 300 ℃. The rest is the same as the first embodiment.
The third concrete implementation mode:
the present embodiment differs from the first to second embodiments in that: and the temperature of the substrate in the second step is 200 ℃. The rest is the same as the first embodiment.
The fourth concrete implementation mode: the present embodiment differs from the first to third embodiments in that: and the temperature of the substrate in the second step is 100 ℃. The rest is the same as the first embodiment.
The fifth concrete implementation mode: the present embodiment differs from the first to fourth embodiments in that: and the temperature of the substrate in the second step is room temperature. The rest is the same as the first embodiment.
The sixth specific implementation mode: the present embodiment differs from the first to fifth embodiments in that: the array buffer layer temperature described in step three was 800 ℃. The rest is the same as the first embodiment.
The seventh embodiment: the present embodiment differs from the first to sixth embodiments in that: the array buffer layer temperature described in step three was 700 ℃. The rest is the same as the first embodiment.
The specific implementation mode is eight: the present embodiment differs from the first to seventh embodiments in that: the array buffer layer temperature described in step three was 600 ℃. The rest is the same as the first embodiment.
The specific implementation method nine: the present embodiment differs from the first to eighth embodiments in that: the array buffer layer temperature described in step three was 500 ℃. The rest is the same as the first embodiment
The detailed implementation mode is ten: the present embodiment differs from the first to ninth embodiments in that: the array buffer layer temperature described in step three was 400 ℃. The rest is the same as the first embodiment.
Embodiments three to ten all change the temperature, and the temperature change changes the forbidden band width.
The invention is described above with reference to the accompanying drawings, it is obvious that the implementation of the invention is not limited in the above manner, and it is within the scope of the invention to adopt various modifications of the inventive method concept and solution, or to apply the inventive concept and solution directly to other applications without modification.
Claims (10)
1. A method for preparing a high-quality semiconductor single crystal thin film by using an array buffer layer comprises the following steps: step 1, cleaning a substrate; step 2, preparing an array buffer layer; and 3, preparing the semiconductor film.
2. The method for preparing a high-quality semiconductor single crystal thin film using an array buffer layer according to claim 1, wherein: the preparation of the array buffer layer in the step 2 is carried out by laser molecular beam epitaxy, and the method specifically comprises the following steps:
step 21, mounting a semiconductor target on a target holder of a laser molecular beam epitaxy system, then covering a clean porous anodic alumina template on the substrate cleaned in the step 1, then fixing the substrate on a sample holder of a growth chamber together, vacuumizing to a certain vacuum degree, heating the substrate to a certain temperature, and then introducing sputtering gas to keep the pressure of the growth chamber at a certain pressure;
and step 22, depositing for a certain time under the condition of pulse laser with certain power, taking out the substrate and the porous anodic alumina template after deposition is finished, and removing the covered porous anodic alumina template to obtain the semiconductor array buffer layer with certain thickness.
3. The method for producing a high-quality semiconductor single-crystal thin film using an array buffer layer according to claim 2, wherein: the certain temperature in the step 21 is 20-800 ℃;
or/and the pressure of the vacuum chamber in step 21 is kept at 1 x 10-3 Pa-30Pa；
Or/and the sputtering gas in the step 21 is oxygen or a mixed gas of oxygen and argon;
or/and the pressure in step 21 is 5 x 10-2Pa。
4. The method for producing a high-quality semiconductor single-crystal thin film using an array buffer layer according to claim 2, wherein: the template in step 22 is a porous anodic alumina template;
or/and the array in the step 22 is a semiconductor array buffer layer with the thickness of 1-10 nm;
or/and the time in step 22 is more than 95 seconds.
5. The method for producing a high-quality semiconductor single-crystal thin film using an array buffer layer as claimed in any one of claims 1 to 4, wherein: the semiconductor film prepared in the step 3 is prepared by pulse laser deposition, and comprises the following steps:
step 31, fixing the substrate with the semiconductor array buffer layer obtained in the step 2 on a sample table of a growth chamber, vacuumizing to a certain vacuum degree, heating the substrate to a certain temperature, and introducing sputtering gas; adjusting a gate valve to keep the pressure of the vacuum chamber at a certain pressure;
and 32, depositing for a certain time under the condition of pulse laser with certain power to obtain the high-quality semiconductor film with a certain thickness.
6. The method for preparing a high-quality semiconductor single crystal thin film using an array buffer layer according to claim 5, wherein: the temperature in step 31 is 20-800 ℃;
or/and the pressure of the vacuum chamber in the step 31 is kept at 1 x 10-3 Pa-30Pa；
Or/and the sputtering gas in the step 31 is oxygen or a mixed gas of oxygen and argon;
or/and the pressure in step 31 is 5 x 10-2Pa。
7. The method for preparing a high-quality semiconductor single crystal thin film using an array buffer layer according to claim 5, wherein: depositing for 20 min to 360 min under the condition of pulse laser with certain power in the step 32; the power was 300 mW.
8. The method for producing a high-quality semiconductor single-crystal thin film using an array buffer layer according to any one of claims 1 to 7, wherein:
the step 1 of cleaning the substrate comprises the following specific steps: putting the substrate into a beaker, ultrasonically cleaning the substrate for 5 minutes by using acetone, alcohol and deionized water in sequence to remove organic impurities and residual ions on the substrate, and then drying the substrate by using nitrogen for later use;
or/and the substrate is made of single crystal sapphire, single crystal silicon, single crystal gallium oxide, silicon carbide and quartz glass.
9. The method for producing a high-quality semiconductor single-crystal thin film using an array buffer layer according to any one of claims 1 to 7, wherein:
the method for preparing the array buffer layer in the step 2 further comprises the following steps: magnetron sputtering deposition, pulsed laser deposition, molecular beam epitaxy, plasma enhanced chemical vapor deposition or organometallic chemical vapor deposition methods;
alternatively, the other method for preparing the semiconductor thin film in the step 3 further includes: magnetron sputtering deposition, pulsed laser deposition, molecular beam epitaxy, plasma enhanced chemical vapor deposition, photo-assisted or plasma-assisted organometallic chemical vapor deposition, and the like.
10. A semiconductor single crystal thin film characterized in that: prepared using the method of any one of claims 1 to 9, the semiconductor thin film having a light transmittance of 95% or more and a half-value width as low as 0.076 °; the semiconductor is Ga2O3Zinc oxide, tin dioxide, hafnium oxide, cuprous oxide, aluminum nitride, gallium nitride, boron nitride, or indium nitride.
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