CN112705856B - Three-dimensional model analysis planning method, device and equipment suitable for double-beam laser direct writing - Google Patents
Three-dimensional model analysis planning method, device and equipment suitable for double-beam laser direct writing Download PDFInfo
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Abstract
The invention provides a three-dimensional model analysis planning method, a device and equipment suitable for double-beam laser direct writing, wherein the three-dimensional model analysis planning method is used for reading and analyzing an STL format three-dimensional model formed by triangular surfaces and simultaneously performing topology reconstruction; carrying out height division on the imported STL model; then, slicing the model in an equal thickness, and carrying out layered cutting on the model to generate a series of vertexes; subsequently, carrying out contour splicing by storing topological information of the STL format three-dimensional model to generate a series of contours on the vertexes; marking filled areas and unfilled areas of the outline; and finally, path planning is carried out according to different scanning line algorithms, so that a better three-dimensional photoetching effect on the double-beam laser direct writing platform is finally realized, and the three-dimensional photoetching results with different characteristics generated by parameter adjustment can be realized.
Description
Technical Field
The invention belongs to the field of three-dimensional photoetching, and particularly relates to a three-dimensional model analysis planning method, a three-dimensional model analysis planning device and three-dimensional model analysis planning equipment suitable for double-beam laser direct writing.
Background
The laser direct writing technology is one of the main technologies for manufacturing optical devices, and has been successfully applied to the fields of microelectronics, integrated circuits, integrated optical devices and the like, while the double-beam laser direct writing can further have the advantages of no mask, non-contact, extremely high spatial resolution and the like, can realize true three-dimensional processing of a complex three-dimensional structure, and can break through the resolution beyond the limit which cannot be reached by the conventional laser direct writing, and the double-beam laser direct writing utilizes two lasers with different wavelengths to break through the diffraction limit to achieve higher precision. Currently, the dual-beam laser direct writing is used for three-dimensional application or research, and an analytic planning algorithm for a system of STL format three-dimensional models is lacked.
At present, the research on the double-beam lithography three-dimensional lithography is less, mainly focuses on the continuous reduction of the double-beam lithography in the micro-nano size to further improve the resolution and the lithography of some specific micro-nano structures, but the research on the generalized three-dimensional model such as model selection, reading, analysis, path planning, signal conversion and the like is relatively lacking, and the application of the double-beam laser direct writing is restricted under the current situation.
Disclosure of Invention
In order to solve the problems in the background art, a first object of the present invention is to provide a three-dimensional model analytical planning method suitable for dual-beam laser direct writing.
Therefore, the invention adopts the following technical scheme:
a three-dimensional model analytical planning method suitable for double-beam laser direct writing is suitable for a double-beam laser direct writing platform, and the double-beam laser direct writing platform comprises a laser galvanometer for controlling a laser focus to move on an XY plane, an electric platform for controlling the laser focus to move up and down in a Z direction and the like; the three-dimensional model analysis planning method aims at the three-dimensional model in the STL format formed by triangular surfaces; the three-dimensional model analysis planning method comprises the following steps:
step (1), reading reconstruction: performing analysis reading and topological reconstruction on the STL format three-dimensional model, wherein the topological reconstruction is to perform vertex v of the three-dimensional model0…vnStoring the three-dimensional coordinates into a vertex storage structure array, wherein each vertex storage structure stores the three-dimensional coordinates x, y and z corresponding to each vertex; all triangles T0…TnStoring the data into a triangle storage structure array; all edges l are divided0…lnStoring the data into an edge storage structure array, and then correspondingly storing all triangles of the model and all vertexes of the model, namely, the triangle storage structure corresponding to the triangle index additionally comprises: indices of three vertices of a triangle; the vertex storage structure corresponding to the vertex index is provided with: all triangle indexes including the current vertex are collected, and then all triangles T are collected0…TnSide l corresponding to the triangular surfacenThe storage is corresponding to each other, that is, the triangle storage structure corresponding to the triangle index has: indices of three sides of the triangle; the vertex storage structure of the edge index is provided with the following components: all triangle index sets containing the current edge complete topology reconstruction;
step (2), height division: performing height division on the read topology reconstruction model in the step (1), performing equal-thickness layering by adopting the thickness set according to the platform characteristics, and needing to complete the establishment of the height zbox of the model, firstly filling or increasing a substrate for a first layer according to the height of the model, traversing all triangles of the model, and hashing the triangles into different zboxes according to the maximum and minimum values of the triangles in the Z direction;
and (3) slicing in layers: traversing each triangle in each zbox in the step (2), and performing intersection calculation with the cutting plane, a series of line segments, that is, segment { s ═ is generated0，s1…snAnd storing the topological relation among the offline segments, so that corresponding outgoing vertexes v are respectively recorded according to the difference of the outgoing points at the vertexes or edges of the triangular surfacenOr out of the edge ln；
And (4) contour synthesis: performing contour synthesis on the line segments obtained in the step (3), searching the line segments according to the topological structure stored in the step (3), finally performing polygonal contour stitching and elimination, and marking out inner and outer contours according to an odd-even algorithm;
step (5), path planning: and (4) filling and path planning are carried out on the inner and outer contours generated in the step (4), firstly, an outer wall path is generated according to the thickness set by the characteristics of the double-beam laser direct writing platform by adopting a contour scanning line algorithm, then, internal horizontal line scanning filling is carried out according to the thickness of the outer wall, and finally, path planning is carried out on paths in different contours and the same contour.
While adopting the above technical scheme, the present invention can also adopt or combine the following further technical schemes:
as a preferred technical scheme of the invention: in the step (1), the topology reconstruction is to reconstruct and store topology information corresponding to the model, and the reconstruction and storage are performed corresponding to the vertex: a plurality of triangular surface indexes corresponding to the vertexes and vertex three-dimensional coordinates; corresponding to the edge, the reconstruction store: two triangular surface indexes corresponding to the edges; corresponding to the triangle, the reconstruction stores: indices of three vertices, indices of three edges.
As a preferred technical scheme of the invention: in the step (2), the thickness of the box layer is determined according to the characteristics of the dual-beam laser direct writing platform, and the value range is 1nm to 1000 nm.
As a preferred technical scheme of the invention: in the step (3), the model is processedWhen the layered slices are performed, the topological relation among the line segments is recorded, and s is establishednAnd out of vertex vnOr out of the edge lnS, establishing sn+1And out of vertex vn+1Or out of the edge ln+1So as to find the corresponding triangle T by mapping the outgoing vertex or outgoing edgenThereby establishing snAnd sn+1The topological relation of (2).
As a preferred technical scheme of the invention: in the step (4), the contour synthesis is performed by searching snAnd sn+1The contour synthesis is performed by the topological relation of (1), and the elimination of the undersized contour is determined by the perimeter.
As a preferred technical scheme of the invention: in the step (5), the thickness of the outer wall is determined according to the characteristics of the dual-beam laser direct writing platform and is a single layer or a double layer, and the value range of the thickness of the outer wall is 1nm to 1000 nm; the pitch of the internal horizontal line scan ranges from 1nm to 1000 nm.
As a preferred technical scheme of the invention: in the step (5), the contour scan line algorithm adopts the topological transformation of the polygon contour after the inner contraction, and takes the data of the polygon contour after the current inner contraction as the path of the next layer of inner wall, and the processes are repeated for the multilayer inner walls.
A second object of the present invention is to provide a three-dimensional model analysis planning apparatus suitable for dual-beam laser direct writing, which addresses the deficiencies in the background art.
Therefore, the invention adopts the following technical scheme:
a three-dimensional model analysis planning device suitable for double-beam laser direct writing is characterized in that: the device comprises:
the reading reconstruction unit is used for analyzing, reading and topologically reconstructing the STL format three-dimensional model;
the height division unit is used for carrying out height division on the topology reconstruction model read by the reading reconstruction unit;
the layered slice unit is used for layering the model of the topology reconstruction according to the zbox generated by the height dividing unit, slicing by using a projection method and storing topology information;
a contour synthesis unit configured to perform contour synthesis on the line segments acquired by the hierarchical slicing unit;
and the path planning unit is used for filling and planning the inner contour and the outer contour generated by the contour synthesis unit.
It is a further object of the present invention to provide a three-dimensional model analysis planning apparatus suitable for dual-beam laser direct writing, which addresses the deficiencies in the background art.
Therefore, the invention adopts the following technical scheme:
an electronic device, comprising:
a processor;
and a memory having stored therein computer program instructions which, when executed by the processor, cause the processor to perform a method of three-dimensional model-resolved planning suitable for dual-beam laser direct writing according to the foregoing.
The three-dimensional model analysis planning method, the device and the equipment suitable for the double-beam laser direct writing provided by the invention have the following advantages:
(1) universality, which is applicable to three-dimensional models of all STL formats;
(2) after the topology reconstruction, optimizing and accelerating a synthetic contour algorithm through the stored topology information;
(3) the layering thickness and the distance between internal paths can be adjusted according to the characteristics of the experiment platform, and the overall photoetching speed and precision can be adjusted.
Drawings
Fig. 1 is a flowchart of an overall three-dimensional model analysis planning method suitable for dual-beam laser direct writing according to the present invention.
Fig. 2 is a top view of the STL format three-dimensional model provided in the present invention.
Fig. 3 is a bottom view of the STL format three-dimensional model provided by the present invention.
Fig. 4 is a side view of the STL format three-dimensional model provided by the present invention.
Fig. 5 is a block diagram of a procedure for reading an STL format file.
FIG. 6 shows all triangles T of the STL format three-dimensional model0…TnAnd all v0…vnA schematic diagram stored in correspondence with each other.
FIG. 7 shows all triangles T of the STL format three-dimensional model0…TnAnd all v0…vnAnother schematic diagram is stored in correspondence with each other.
FIG. 8 is a triangle T of the STL format three-dimensional model0…TnSide l corresponding to the triangular surfacenAnd storing schematic diagrams corresponding to each other.
FIG. 9 is a schematic diagram of topological relationship between adjacent segments after cutting.
FIG. 10 is a schematic view of various intersection situations of the cutting surface and the triangular surface.
FIG. 11 is a schematic diagram of a run-out from edge topology.
FIG. 12 is a schematic drawing of a punch-out topology from a vertex.
FIG. 13 is a schematic diagram of solving an intersection point of a triangular surface and a cutting plane by a projection method.
Fig. 14 is a contour synthesis flowchart.
Fig. 15 is a block diagram of a topology query process.
FIG. 16 is a schematic diagram of the parity algorithm.
FIG. 17 is an exterior wall contour routing diagram.
Fig. 18 is a schematic diagram of two scan fills.
Fig. 19 is a horizontal line scan path planning diagram.
FIG. 20 is a flow chart of photolithography of the method under a microscope.
FIG. 21 is a three-dimensional lithography result obtained by the method under an electron microscope.
Detailed Description
The embodiments of the present invention will be described in detail with reference to the accompanying drawings and specific examples of a dual-beam laser direct writing platform.
Fig. 1 is a flowchart of an overall three-dimensional model analysis planning method suitable for dual-beam laser direct writing, fig. 2, 3, and 4 are three-dimensional model preview diagrams used in the present embodiment, the three-dimensional model is in a binary STL format, the resolution of the dual-beam laser direct writing platform can reach 100nm, and the present embodiment can be completed by converting the output to the dual-beam laser direct writing platform through the steps of reading analysis, height division, hierarchical slicing, contour synthesis, path planning, and the like.
Reading the binary STL format three-dimensional model, wherein the difference between the binary STL format and the ASCII format is shown in the following table 1:
TABLE 1 comparison of different formats for STL model
As shown in the above table, the main basis for distinguishing the ASCII format from the binary format is whether the filename information contains a solid keyword, but some STL files in the binary format also contain the keyword solid, so that a binary file reading attempt is required after the ASCII file reading failure, the overall process is as shown in fig. 5, the three-dimensional model is completely read in, and then topology reconstruction is performed next, because of the relevance of the topology relationship, all the work depends on the information of all vertices and triangles, and therefore the three-dimensional model must be completely read in and then topology reconstruction is performed. Topology reconstruction firstly carries out vertex v of the three-dimensional model0…vnStoring the three-dimensional coordinates x, y and z corresponding to each vertex in an array, and then indexing all triangles into index0...indexnAnd all v0…vnStoring correspondingly to each other, as shown in fig. 6 and 7; index of all triangles0…indexnSide l corresponding to the triangular surfacenAnd storing the two corresponding to each other, as shown in fig. 8, namely completing the topology reconstruction.
And (2) adopting the highest-precision equal-thickness layering because the precision of the dual-beam photoetching platform is higher, because the three-dimensional model cannot be completely divided by the selected height, namely the following formula (1).
Firstly, a substrate needs to be added to enable the height of the three-dimensional model to be divided, then, the Z direction is divided to form a plurality of Z-axis direction surrounding layers, namely zbox, the layering height, namely the height interval of each zbox is selected to be [1nm,1000nm ] according to the characteristics of the traditional Chinese dual-beam lithography platform and the speed and precision of a final finished product, then, all triangles are traversed once, and the triangles are hashed in the zboxes according to the Z-direction span of the triangles for storage.
Step (3), traversing each triangle in each zbox in step (2), performing intersection calculation with the cutting plane, as shown in fig. 9, the cutting plane and the triangular plane may generate multiple intersection situations, and a plurality of intersection points of the current triangular plane and the selected cutting plane may be obtained, where the plurality of intersection points generally may be two points that are not set as i0，i1They form a line segment s0Described by formula (2):
segment＝{s0，s1…sn} (2)
here, the topological relation between the lower adjacent line segments is preserved, that is, as shown in fig. 10, so that the preservation of the topological information is divided into two cases according to the difference of the break-out point at the vertex or edge of the triangle face: one is that the plane passes through the triangle and exits at one side of the triangle, and the other is that the plane passes through the triangle and exits at one vertex of the triangle, as shown in fig. 11, in which case it is the exiting side l that needs to be recorded0And its corresponding triangle index, as shown in FIG. 12, in which case it is the outgoing vertex p that needs to be recorded1，p1For purposes of this specification or expression within a triangle, the same meaning as vertex v belongs to an element of the set of vertices. Similarly, according to the rotation rule of the triangles, the intersection solution of the plane and the triangle only needs to carry out intersection solution on three edges of the triangle respectively, specificallySpecifically, as shown in fig. 13, on the projection plane, the plane and the spatial straight line are changed into intersection judgment of two straight lines on the two-dimensional plane, and the solutions for x and y are similar, so that only the solution for x is exemplified herein, and the cutting plane is set as zplaneThen the intersection solving equation is as follows:
distance＝z1-z0 (3)
num＝(x1-x0)*(zplane-z0) (4)
therefore, for solving the general intersection point of the triangle, it is only necessary to repeat the above equation 4 times to respectively find x and y of the two intersection points to obtain a result, and record the index of the line segment generated by the current triangular surface, that is, as shown in the following table 2:
TABLE 2 determination of intersection of cut surface with triangular surface
All the steps of intersecting the triangle with the cutting plane to obtain a line segment have been completed.
Step (4), profile synthesis is performed on the line segments obtained in step (3), the overall process is shown in fig. 14, the line segments are searched according to the topological structure stored in step (3), the specific process is shown in fig. 15, the topological information always stored in the previous module is used, for a triangular surface, the line segment closest to the triangular surface can be found only by the time complexity of O (1), the process is divided into two cases, if the line segment penetrates out from the side when the triangle is cut, the corresponding line segment can be directly indexed according to the subscript of the penetrated triangle, if the line segment penetrates out from the vertex when the triangle is cut, the subscript of the triangle connected according to the penetrated vertex can be indexed to the vertexCorresponding line segments, therefore, only single and constant times of inquiry are respectively made in the two cases, so that the time complexity is O (1), and finally, the polygon contour stitching and elimination are carried out, namely, the polygon contour stitching is within the limit range dlimitAdding line segments inside to connect the contour into a closed contour, and regarding the starting point s of the contour0And an end point snIf two points are connected topologically, the contour is a closed contour, otherwise, the distance determination is performed, as shown in the following equations (6) and (7):
s0＝(i00，i01)，sn＝(in0，in1) (6)
d＝(in1.x-i00.x)2+(un1.y-i00.y)2+(in1.z-i00.z)2 (7)
directly used is a comparison of the squares of the distances, if d < dlimitThe contour can then be considered suturable, where only one more line segment s needs to be addedn+1(in1，i00) So that the whole contour is a closed contour; if the stitching condition is not met, discarding the current contour, and meanwhile, discarding an excessively small contour, wherein the size of the contour is judged by calculating the perimeter of the contour and then comparing the perimeter with a set threshold, and the polygon contour is rejected by adopting the following formula (8):
the contour perimeter threshold c is based on the characteristics of the dual beam lithography stage and the speed and accuracy of the final productlimitThe value interval is [1nm,1000nm]Next, the inner and outer contours are marked according to the parity algorithm, which is shown in fig. 16, cutting with rays, judging the inner and outer contours by the parity of the number of times of passing the contours, the odd number of times of passing the contours means the outer contour, the even number of times of passing the contours means the inner contour, and simultaneously, establishing a stack, each time the inner and outer contours will be marked, and the inner and outer contours will be marked according to the parity algorithmAnd (4) putting the intersecting contour into the stack, wherein the number of times that the current ray penetrates out of the contour is a number, if the intersecting current contour of the ray is the same as the previous intersecting contour in the stack, the contour is already judged without judgment, and the previous intersecting contour is popped out of the stack.
And (5) planning the path of the inner and outer contours generated in the step (4), and firstly generating an outer wall path according to the thickness set by the platform characteristics by adopting a contour scanning line algorithm, as shown in fig. 17. According to the characteristics of the dual-beam lithography platform and the speed and precision of the final finished product, the outer wall thickness value interval is [1nm,1000nm ], then internal horizontal line scanning filling is carried out according to the outer wall thickness, according to the characteristics of the dual-beam lithography platform and the speed and precision of the final finished product, the path interval value interval is [1nm,1000nm ], the specific filling mode is shown in FIG. 18, finally path planning is carried out on different profiles and paths in the same profile, as shown in FIG. 19, after the horizontal line scanning of the profile is completed, the scanning lines are divided into profiles which are connected end to end, in the same profile, a starting point is firstly arranged, the starting point is not only related to the current profile, but also related to the profiles of the same level, and the starting point of the next profile is searched from the ending point of the previous profile, finding out the starting point of the current contour closest to the end point of the last contour, and then carrying out the subsequent operation.
Fig. 20 is a three-dimensional lithography flowchart of the three-dimensional model observed under a microscope under the dual-beam laser direct writing platform, and fig. 21 is a series of results of the three-dimensional model under different parameters under an electron microscope.
And (5) result verification: the results of fig. 20 are sufficient to show that: the method can realize generalized analysis of the three-dimensional model, and can perform actual three-dimensional photoetching on the dual-beam laser direct writing platform, and the results of fig. 21 fully show that: the method is practical and effective for generalized analysis of the three-dimensional model, can be arranged on a double-beam laser direct writing platform according to different parameters to carry out actual three-dimensional photoetching, and obtains a three-dimensional photoetching structure with stable structure and clear topology.
The laser direct writing in the above embodiment of the present invention is a dual-beam laser direct writing platform, and is only suitable for analyzing and planning a three-dimensional model in STL format.
The above-described embodiments are intended to illustrate the present invention, but not to limit the present invention, and any modifications, equivalents, improvements, etc. made within the spirit of the present invention and the scope of the claims fall within the scope of the present invention.
Claims (8)
1. A three-dimensional model analysis planning method suitable for double-beam laser direct writing is characterized by comprising the following steps:
the three-dimensional model analysis planning method is suitable for a double-beam laser direct writing platform, wherein the double-beam laser direct writing platform comprises a laser galvanometer for controlling a laser focus to move on an XY plane and an electric platform for controlling the laser focus to move up and down in a Z direction; the three-dimensional model analysis planning method aims at the three-dimensional model in the STL format formed by triangular surfaces; the three-dimensional model analysis planning method comprises the following steps:
step (1), reading reconstruction: analyzing, reading and topologically reconstructing the STL format three-dimensional model, wherein all triangular surfaces corresponding to the STL format three-dimensional model are T0…TnThe topology reconstruction is to make the vertex v of the three-dimensional model0…vnStoring in an array, storing three-dimensional coordinates x, y, z corresponding to each vertex, and storing all triangles T0…TnAnd all v0…vnStoring the triangles T correspondingly to each other0…TnSide l corresponding to the triangular surfacenStoring correspondingly to each other, namely finishing topology reconstruction;
step (2), height division: performing height division on the read topology reconstruction model in the step (1), performing equal-thickness layering by adopting the thickness set according to the platform characteristics, and needing to complete the establishment of the height zbox of the model, firstly filling or increasing a substrate for a first layer according to the height of the model, traversing all triangles of the model, and hashing the triangles into different zboxes according to the maximum and minimum values of the triangles in the Z direction;
and (3) slicing in layers: traversing each triangle in each zbox in the step (2), and performing intersection calculation with the cutting plane, a series of line segments, that is, segment { s ═ is generated0,s1…sn}，SnStoring the information of the penetrating point and the penetrating point, storing the topological relation between the line segments, and recording the penetrating vertex v when the penetrating point penetrates out from the vertex of the trianglenThe exit point exits from the triangle side, then the exit side l is recordednAn index of (2);
and (4) contour synthesis: performing contour synthesis on the line segments obtained in the step (3), searching the line segments according to the topological structure stored in the step (3), finally performing polygonal contour stitching and elimination, and marking out inner and outer contours according to an odd-even algorithm;
step (5), path planning: and (4) filling and path planning are carried out on the inner and outer contours generated in the step (4), firstly, an outer wall path is generated according to the thickness set by the characteristics of the double-beam laser direct writing platform by adopting a contour scanning line algorithm, then, internal horizontal line scanning filling is carried out according to the thickness of the outer wall, and finally, path planning is carried out on paths in different contours and the same contour.
2. The method for three-dimensional model analytical planning suitable for two-beam laser direct writing according to claim 1, wherein: in the step (1), topology reconstruction is to reconstruct and store topology information corresponding to the model; corresponding to the vertices, the reconstruction stores: a plurality of triangular surface indexes corresponding to the vertexes and vertex three-dimensional coordinates; corresponding to the edge, the reconstruction store: two triangular surface indexes corresponding to the edges; corresponding to the triangle, the reconstruction stores: indices of three vertices, indices of three edges.
3. The method for three-dimensional model analytical planning suitable for two-beam laser direct writing according to claim 1, wherein in the step (2), the zbox layer thickness is determined according to the characteristics of the two-beam laser direct writing platform, and is in a range of 1nm to 1000 nm.
4. The method according to claim 1, wherein in the step (3), when the model is sliced in layers, the adjacent line segments s are recordednAnd sn+1The topological relation between the two, and s is established at the same timenAnd snThe triangular surface passes through the vertex vnOr out of the edge lnS, establishing sn+1And sn+1The triangular surface passes through the vertex vn+1Or out of the edge ln+1So as to find the corresponding triangle T by mapping the outgoing vertex or outgoing edgenThereby establishing snAnd sn+1The topological relation of (2).
5. The method for three-dimensional model analysis planning suitable for two-beam laser direct writing according to claim 1, wherein in the step (4), the contour synthesis is performed by searching snAnd sn+1The contour synthesis is performed by the topological relation of (1), and the elimination of the undersized contour is determined by the perimeter.
6. The three-dimensional model analytical planning method suitable for dual-beam laser direct writing according to claim 1, wherein in the step (5), the outer wall thickness is a single layer or a double layer according to the characteristics of the dual-beam laser direct writing platform, and the value range of the outer wall thickness is 1nm to 1000 nm; the pitch of the internal horizontal line scan ranges from 1nm to 1000 nm.
7. The method for three-dimensional model analysis and planning applicable to two-beam laser direct writing according to claim 1, wherein in the step (5), the contour scan line algorithm adopts a topological transformation that the polygon contour is subjected to retraction, and then takes the current retracted polygon contour data as a path of the next inner wall, and the above process is repeated for the multiple inner walls.
8. An electronic device, comprising:
a processor;
and a memory having stored therein computer program instructions which, when executed by the processor, cause the processor to perform the method of three-dimensional model-resolved planning suitable for dual-beam laser direct writing according to any one of claims 1-7.
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