CN112702024B - High-linearity distributed optical drive circuit - Google Patents
High-linearity distributed optical drive circuit Download PDFInfo
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- CN112702024B CN112702024B CN202011594634.6A CN202011594634A CN112702024B CN 112702024 B CN112702024 B CN 112702024B CN 202011594634 A CN202011594634 A CN 202011594634A CN 112702024 B CN112702024 B CN 112702024B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 40
- 239000010409 thin film Substances 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 13
- 238000000034 method Methods 0.000 description 6
- 238000004891 communication Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
Abstract
The invention discloses a high-linearity distributed optical drive circuit, which relates to the field of optical drive circuits and comprises a plurality of single-stage amplifiers, wherein the single-stage amplifiers are connected in parallel, and each single-stage amplifier comprises: the first amplifying unit comprises a first transistor Q1, a third transistor Q3 and a fifth transistor Q5, wherein the first end of the first transistor Q1 is connected with the first end of the third transistor Q3 and then grounded, the second end of the first transistor Q1, the second end of the third transistor Q3 and the third end of the fifth transistor Q5 are connected with fixed levels, and the first end of the fifth transistor Q5 is connected with the third end of the third transistor Q3 and then grounded; the second amplifying unit includes a second transistor Q2, a fourth transistor Q4 and a sixth transistor Q6, which are connected in the same manner as the first transistor Q1, the third transistor Q3 and the fifth transistor Q5. The invention can effectively improve the linearity of the transmission signal curve of the optical drive circuit.
Description
Technical Field
The present invention relates to the field of distributed optical drive circuits, and in particular, to a distributed optical drive circuit with high linearity.
Background
As the problem in remote signal transmission is overcome in order to secure the communication effect, the signal spectrum must be shifted into a high frequency channel for transmission by modulation. With the explosive growth of the traffic data volume, optical fiber communication is continuously introduced into higher-level modulation formats, from the initial NRZ (Not Return to Zero, non-return to zero code) to PAM-4 (Pulse Amplitude Modulation ) to 16QAM (Quadrature Amplitude Modulation, quadrature amplitude modulation), which can multiply the transmission rate of the channel. The linearity of the transmission signal curve of the optical drive circuit of the existing optical modulator is not high, and the linearity requirement of an advanced modulation format on an optoelectronic device is difficult to meet.
In the related art, referring to fig. 1, a single-stage amplifier in a conventional optical driving circuit is provided with two resistors R connected in series between a transistor Q1 and a transistor Q2. Before setting the two resistors R, assuming that the transconductance of the transistor Q1 and the transistor Q2 is Gm, after setting the two resistors R, the transconductance becomes Gm/(1+gm×r), and the linearity of the optical drive circuit transmission signal curve is still related to the nonlinear quantity Gm, but the correlation becomes weak.
Therefore, to meet the requirement of advanced modulation formats in optical fiber communication, how to realize an optical driving circuit with a high-linearity transmission signal curve is a problem to be solved in the art.
Disclosure of Invention
The embodiment of the invention provides a distributed optical drive circuit with high linearity, which aims to solve the technical problem that the optical drive circuit in the related art is low in linearity of a transmission signal curve.
The embodiment of the invention provides a high-linearity distributed optical drive circuit, which comprises a plurality of single-stage amplifiers, wherein the single-stage amplifiers are connected in parallel, and each single-stage amplifier comprises:
the first amplifying unit comprises a first transistor Q1, a third transistor Q3 and a fifth transistor Q5, wherein a first end of the first transistor Q1 is connected with a first end of the third transistor Q3 and then grounded, a second end of the first transistor Q1, a second end of the third transistor Q3 and a third end of the fifth transistor Q5 are connected and then grounded, a first end of the fifth transistor Q5 is connected with a third end of the third transistor Q3 and then grounded, a third end of the first transistor Q1 is used for being connected with a negative input signal, and a second end of the fifth transistor Q5 is used for outputting a negative signal;
the second amplifying unit comprises a second transistor Q2, a fourth transistor Q4 and a sixth transistor Q6, wherein the first end of the second transistor Q2 is connected with the first end of the fourth transistor Q4 and then grounded, the second end of the second transistor Q2, the second end of the fourth transistor Q4 and the third end of the sixth transistor Q6 are connected and then connected with a fixed level, the first end of the sixth transistor Q6 is connected with the third end of the fourth transistor Q4 and then grounded, the third end of the second transistor Q2 is used for being connected with a positive input signal, and the second end of the sixth transistor Q6 is used for outputting a positive signal; and
two resistors R connected in series are arranged between the third end of the third transistor Q3 and the third end of the fourth transistor Q4.
In some embodiments, the first transistor Q1 and the second transistor Q2 are transistors.
In some embodiments, the third transistor Q3 and the fourth transistor Q4 are transistors.
In some embodiments, the fifth transistor Q5 and the sixth transistor Q6 are transistors.
In some embodiments, the transistor is an NPN transistor.
In some embodiments, the first transistor Q1 and the second transistor Q2 are the same size, the third transistor Q3 and the fourth transistor Q4 are the same size, and the fifth transistor Q5 and the sixth transistor Q6 are the same size.
In some embodiments, a constant current source I1 is disposed between a connection point of the first terminal of the first transistor Q1 and the first terminal of the third transistor Q3 and ground, and a constant current source I1 is disposed between a connection point of the first terminal of the second transistor Q2 and the first terminal of the fourth transistor Q4 and ground.
In some embodiments, a constant current source I2 is disposed between a connection point of the second terminal of the third transistor Q3 and the third terminal of the fifth transistor Q5 and a fixed level, and a constant current source I2 is disposed between a connection point of the second terminal of the fourth transistor Q4 and the third terminal of the sixth transistor Q6 and a fixed level.
In some embodiments, both of the resistors R are sheet resistors.
The technical scheme provided by the invention has the beneficial effects that:
the embodiment of the invention provides a high-linearity distributed optical driving circuit, which comprises a plurality of parallel single-stage amplifiers, wherein a first amplifying unit of each single-stage amplifier is provided with a third transistor Q3 and a fifth transistor Q5, the third transistor Q3 and the fifth transistor Q5 form local negative feedback, the gain A is about the amplification factor of the third transistor Q3, at the moment, the transconductance of the first amplifying unit becomes A/((1+A) R), and the transconductance of the first amplifying unit is related to the gain A, namely, the transconductance of the first amplifying unit becomes a fixed quantity, so that the linearity of an output signal of the first amplifying unit is improved. Similarly, by providing the fourth transistor Q4 and the sixth transistor Q6, the transconductance of the second amplifying unit also becomes a/((1+a) R), and the linearity of the output signal of the second amplifying unit is improved, that is, the linearity of the transmission signal curve of the single-stage amplifier is significantly improved. The plurality of parallel single-stage amplifiers can improve the linearity of the transmission curve of the optical driving circuit in the embodiment of the invention. The optical drive circuit of the present invention can be used as an optical drive circuit of various optical devices, such as a mach-zehnder modulator, an electroabsorption modulated laser, and the like.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a block diagram of a prior art single stage amplifier;
fig. 2 is a block diagram of a distributed optical driving circuit with high linearity according to an embodiment of the present invention;
fig. 3 is a block diagram of the single stage amplifier of fig. 2.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The embodiment of the invention provides a distributed optical driving circuit with high linearity, which can solve the technical problem that the linearity of the transmission signal curve of the existing single-stage amplifier is not high.
Referring to fig. 2, a high-linearity distributed optical driving circuit includes a plurality of single-stage amplifiers, where the single-stage amplifiers are connected in parallel, and the dotted circle part in fig. 2 is the single-stage amplifier. The distributed optical driving device with high linearity in the embodiment of the present invention further includes a plurality of inductors L, where the positive input terminal VinN or the negative input terminal VinP of each single-stage amplifier is connected to one input terminal of the optical driving circuit through the inductors L, and the positive output terminal VoutN and the negative output terminal VoutP of each single-stage amplifier are connected to one output terminal of the optical driving circuit through the inductors L.
As shown in fig. 3, each of the single-stage amplifiers includes: a first amplifying unit and a second amplifying unit.
The first amplifying unit includes a first transistor Q1, a third transistor Q3, and a fifth transistor Q5, where a first end of the first transistor Q1 is connected to a first end of the third transistor Q3 and then grounded, a second end of the first transistor Q1, a second end of the third transistor Q3, and a third end of the fifth transistor Q5 are connected and then grounded, a first end of the fifth transistor Q5 is connected to a third end of the third transistor Q3 and then grounded, a third end of the first transistor Q1 is used for connecting a negative input signal, and a second end of the fifth transistor Q5 is used for outputting a negative signal.
The second amplifying unit includes a second transistor Q2, a fourth transistor Q4, and a sixth transistor Q6, where a first end of the second transistor Q2 is connected to the first end of the fourth transistor Q4 and then grounded, a second end of the second transistor Q2, a second end of the fourth transistor Q4, and a third end of the sixth transistor Q6 are connected and then grounded, a first end of the sixth transistor Q6 is connected to the third end of the fourth transistor Q4 and then grounded, a third end of the second transistor Q2 is used for connecting an anode input signal, and a second end of the sixth transistor Q6 is used for outputting an anode signal.
Two resistors R connected in series are arranged between the third end of the third transistor Q3 and the third end of the fourth transistor Q4.
Specifically, the first transistor Q1, the second transistor Q2, the third transistor Q3, the fourth transistor Q4, the fifth transistor Q5, and the sixth transistor Q6 are all transistors. Namely, the first, second and third ends of the first, second, third, fourth, fifth and sixth transistors Q1, Q2, Q3, Q4, Q5 and Q6 are respectively an emitter, a collector and a base.
The emitter of the first transistor Q1 is connected to the emitter of the third transistor Q3 and then grounded, the collector of the first transistor Q1, the collector of the third transistor Q3 and the base of the fifth transistor Q5 are connected to a fixed level, the emitter of the fifth transistor Q5 is connected to the base of the third transistor Q3 and then grounded, and the base of the first transistor Q1 and the collector of the fifth transistor Q5 are respectively the negative input terminal VinP and the negative output terminal VoutP of the single-stage amplifier in the embodiment of the invention.
The emitter of the second transistor Q2 is connected to the emitter of the fourth transistor Q4 and then grounded, the collector of the second transistor Q2, the collector of the fourth transistor Q4 and the base of the sixth transistor Q6 are connected to a fixed level, the emitter of the sixth transistor Q6 is connected to the base of the fourth transistor Q4 and then grounded, and the base of the second transistor Q2 and the collector of the sixth transistor Q6 are respectively the positive input terminal VinN and the positive output terminal VoutN of the single-stage amplifier in the embodiment of the invention.
In the design of the single-stage amplifier in the embodiment of the present invention, the first amplifying unit forms the local negative feedback by setting the third transistor Q3 and the fifth transistor Q5, the gain a of the third transistor Q3 is about the amplification factor of the third transistor Q3, at this time, the transconductance of the first amplifying unit becomes a/((1+a) ×r), and the transconductance of the first amplifying unit is related to the gain a, that is, the transconductance of the first amplifying unit becomes a fixed quantity, so that the linearity of the output signal of the first amplifying unit is improved. Similarly, by providing the fourth transistor Q4 and the sixth transistor Q6, the transconductance of the second amplifying unit also becomes a/((1+a) R), and the linearity of the output signal of the second amplifying unit is also improved, that is, the linearity of the transmission signal curve of the single-stage amplifier in the embodiment of the present invention is obviously improved. The plurality of parallel single-stage amplifiers can improve the linearity of the transmission curve of the optical driving circuit in the embodiment of the invention. The optical drive circuit of the present invention can be used as an optical drive circuit of various optical devices, such as a mach-zehnder modulator, an electroabsorption modulated laser, and the like.
As an optional implementation manner, the single-stage amplifier in the embodiment of the present invention may be designed by selecting the triode as an NPN triode. The NPN triode has the characteristics of long service life, safety, reliability, no mechanical abrasion, high switching speed, small volume and the like, can be used in power supply circuits, driving circuits, switching circuits, amplifying circuits, current adjustment and the like, and has wider application.
As an alternative implementation manner, the single-stage amplifier in the embodiment of the present invention is designed such that the first transistor Q1 and the second transistor Q2 have the same size, the third transistor Q3 and the fourth transistor Q4 have the same size, and the fifth transistor Q5 and the sixth transistor Q6 have the same size. Referring to fig. 2, the first transistor Q1 and the second transistor Q2, the third transistor Q3 and the fourth transistor Q4, and the fifth transistor Q5 and the sixth transistor Q6 form a symmetrical structure, and each pair of transistors has the same size, so that interference caused by device differences can be eliminated, and linearity of a transmission signal curve is further ensured.
As an alternative embodiment, a constant current source I1 is disposed between the ground and a connection point of the first terminal of the first transistor Q1 and the first terminal of the third transistor Q3, and a constant current source I1 is disposed between the ground and a connection point of the first terminal of the second transistor Q2 and the first terminal of the fourth transistor Q4.
As an alternative embodiment, a constant current source I2 is disposed between a connection point of the second terminal of the third transistor Q3 and the third terminal of the fifth transistor Q5 and a fixed level, and a constant current source I2 is disposed between a connection point of the second terminal of the fourth transistor Q4 and the third terminal of the sixth transistor Q6 and a fixed level.
As an alternative embodiment, a constant current source I3 is disposed between the connection point of the third terminal of the third transistor Q3 and the third terminal of the fifth transistor Q5 and ground, and a constant current source I3 is disposed between the connection point of the third terminal of the fourth transistor Q4 and the first terminal of the sixth transistor Q6 and ground.
As an optional implementation manner, when the single-stage amplifier in the embodiment of the invention is designed, the two resistors R are all film resistors, and the film resistor has high precision, stable performance and simple and light structure.
In the description of the present invention, it should be noted that the azimuth or positional relationship indicated by the terms "upper", "lower", etc. are based on the azimuth or positional relationship shown in the drawings, and are merely for convenience of describing the present invention and simplifying the description, and are not indicative or implying that the apparatus or element in question must have a specific azimuth, be constructed and operated in a specific azimuth, and thus should not be construed as limiting the present invention. Unless specifically stated or limited otherwise, the terms "mounted," "connected," and "coupled" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
It should be noted that in the present invention, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The foregoing is only a specific embodiment of the invention to enable those skilled in the art to understand or practice the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features of the invention herein.
Claims (9)
1. A distributed optical drive circuit of high linearity, said optical drive circuit comprising a plurality of single stage amplifiers, a plurality of said single stage amplifiers being connected in parallel, each of said single stage amplifiers comprising:
the first amplifying unit comprises a first transistor Q1, a third transistor Q3 and a fifth transistor Q5, wherein a first end of the first transistor Q1 is connected with a first end of the third transistor Q3 and then grounded, a second end of the first transistor Q1, a second end of the third transistor Q3 and a third end of the fifth transistor Q5 are connected and then grounded, a first end of the fifth transistor Q5 is connected with a third end of the third transistor Q3 and then grounded, a third end of the first transistor Q1 is used for being connected with a negative input signal, and a second end of the fifth transistor Q5 is used for outputting a negative signal;
the second amplifying unit comprises a second transistor Q2, a fourth transistor Q4 and a sixth transistor Q6, wherein the first end of the second transistor Q2 is connected with the first end of the fourth transistor Q4 and then grounded, the second end of the second transistor Q2, the second end of the fourth transistor Q4 and the third end of the sixth transistor Q6 are connected and then connected with a fixed level, the first end of the sixth transistor Q6 is connected with the third end of the fourth transistor Q4 and then grounded, the third end of the second transistor Q2 is used for being connected with a positive input signal, and the second end of the sixth transistor Q6 is used for outputting a positive signal; and
two resistors R connected in series are arranged between the third end of the third transistor Q3 and the third end of the fourth transistor Q4.
2. A highly linear distributed optical drive circuit as defined in claim 1, wherein: the first transistor Q1 and the second transistor Q2 are transistors.
3. A highly linear distributed optical drive circuit as defined in claim 1, wherein: the third transistor Q3 and the fourth transistor Q4 are transistors.
4. A highly linear distributed optical drive circuit as defined in claim 1, wherein: the fifth transistor Q5 and the sixth transistor Q6 are transistors.
5. A highly linear distributed optical drive circuit according to any one of claims 2 to 4, wherein: the triode is an NPN triode.
6. A highly linear distributed optical drive circuit as defined in claim 1, wherein:
the first transistor Q1 and the second transistor Q2 have the same size, the third transistor Q3 and the fourth transistor Q4 have the same size, and the fifth transistor Q5 and the sixth transistor Q6 have the same size.
7. A highly linear distributed optical drive circuit as defined in claim 1, wherein:
a constant current source I1 is disposed between the connection point of the first end of the first transistor Q1 and the first end of the third transistor Q3 and ground, and a constant current source I1 is disposed between the connection point of the first end of the second transistor Q2 and the first end of the fourth transistor Q4 and ground.
8. A highly linear distributed optical drive circuit as defined in claim 1, wherein:
a constant current source I2 is disposed between the connection point of the second end of the third transistor Q3 and the third end of the fifth transistor Q5 and the fixed level, and a constant current source I2 is disposed between the connection point of the second end of the fourth transistor Q4 and the third end of the sixth transistor Q6 and the fixed level.
9. A highly linear distributed optical drive circuit as defined in claim 1, wherein: both of the resistors R are thin film resistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011594634.6A CN112702024B (en) | 2020-12-29 | 2020-12-29 | High-linearity distributed optical drive circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011594634.6A CN112702024B (en) | 2020-12-29 | 2020-12-29 | High-linearity distributed optical drive circuit |
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| CN112702024A CN112702024A (en) | 2021-04-23 |
| CN112702024B true CN112702024B (en) | 2024-01-26 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1049249A1 (en) * | 1999-04-30 | 2000-11-02 | Lucent Technologies Inc. | Variable gain amplifiers |
| CN101025895A (en) * | 2006-02-20 | 2007-08-29 | 天利半导体（深圳）有限公司 | Driving circuit |
| CN203313133U (en) * | 2013-06-04 | 2013-11-27 | 苏州英诺迅科技有限公司 | Power amplifier |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4515821B2 (en) * | 2004-05-25 | 2010-08-04 | ルネサスエレクトロニクス株式会社 | Drive circuit, operation state detection circuit, and display device |
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2020
- 2020-12-29 CN CN202011594634.6A patent/CN112702024B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1049249A1 (en) * | 1999-04-30 | 2000-11-02 | Lucent Technologies Inc. | Variable gain amplifiers |
| CN101025895A (en) * | 2006-02-20 | 2007-08-29 | 天利半导体（深圳）有限公司 | Driving circuit |
| CN203313133U (en) * | 2013-06-04 | 2013-11-27 | 苏州英诺迅科技有限公司 | Power amplifier |
Non-Patent Citations (1)
| Title |
|---|
| 一种应用于多相同步降压型DC/DC的误差放大器;李新;朱红萍;赵正超;洪婷;张美娟;;固体电子学研究与进展(第02期);全文 * |
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