CN112695277A - Deposition heat treatment equipment for flexible copper indium gallium selenide thin-film solar cell - Google Patents
Deposition heat treatment equipment for flexible copper indium gallium selenide thin-film solar cell Download PDFInfo
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- CN112695277A CN112695277A CN202011489439.7A CN202011489439A CN112695277A CN 112695277 A CN112695277 A CN 112695277A CN 202011489439 A CN202011489439 A CN 202011489439A CN 112695277 A CN112695277 A CN 112695277A
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 60
- 230000008021 deposition Effects 0.000 title claims abstract description 32
- 239000010409 thin film Substances 0.000 title claims abstract description 27
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 52
- 239000010408 film Substances 0.000 claims abstract description 38
- 238000000151 deposition Methods 0.000 claims abstract description 33
- 238000005096 rolling process Methods 0.000 claims abstract description 13
- 229910052783 alkali metal Inorganic materials 0.000 claims description 24
- 150000001340 alkali metals Chemical class 0.000 claims description 23
- 238000004804 winding Methods 0.000 claims description 16
- 238000001883 metal evaporation Methods 0.000 claims description 15
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 9
- 239000011669 selenium Substances 0.000 claims description 9
- 229910052711 selenium Inorganic materials 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 4
- 239000000523 sample Substances 0.000 claims description 4
- 230000010355 oscillation Effects 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000005086 pumping Methods 0.000 abstract description 4
- 238000007669 thermal treatment Methods 0.000 abstract description 4
- 238000001704 evaporation Methods 0.000 description 11
- 230000008020 evaporation Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 5
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 235000013024 sodium fluoride Nutrition 0.000 description 2
- 239000011775 sodium fluoride Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000009123 feedback regulation Effects 0.000 description 1
- 150000004673 fluoride salts Chemical class 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0694—Halides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/52—Means for observation of the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The present invention relates to a solar cell processing apparatus. The utility model provides a flexible copper indium gallium selenide thin-film solar cell deposit thermal treatment equipment, includes the process chamber, is equipped with the rolling chamber respectively and unreels the chamber in the both sides of process chamber, and process chamber, rolling chamber and unreel and all be connected with the vacuum pump on the chamber, treat that the film of deposit thermal treatment passes through in proper order unreeling chamber, process chamber and rolling chamber, are equipped with the overhead door between process chamber and rolling chamber, also are equipped with the overhead door between process chamber and unreel the chamber. The invention provides a flexible copper indium gallium selenide thin-film solar cell deposition heat treatment equipment structure which is simple in structure, does not need to repeatedly vacuumize a deposition heat treatment cavity and is high in production efficiency; the technical problems that in the prior art, repeated vacuum pumping is needed during deposition heat treatment, and the production efficiency is low are solved.
Description
Technical Field
The invention relates to a solar cell processing device, in particular to a flexible copper indium gallium selenide thin-film solar cell alkali metal deposition heat treatment device.
Background
The current global photovoltaic market is mainly crystalline silicon solar cells, but the rapid consumption of energy resources caused by a high-energy-consumption production process cannot be borne by the society, and the larger-scale development of the photovoltaic industry is bound to be restricted. Therefore, the development of low-cost, new thin-film solar cells is a necessary trend in the future international photovoltaic industry.
The high-efficiency thin-film solar cell taking copper indium gallium selenide as an absorption layer is generally called a copper indium gallium selenide cell (CIGS cell), and the CIGS thin-film solar cell is taken as a flexible solar cell and is characterized by high technical requirement, portability, no phenomenon of light-induced decay, high conversion efficiency and stable performance.
The alkaline metal material obviously improves the electrical performance of the CIGS thin film solar cell. Alkali metal elements include Li, Na, K, Cs, etc., and are generally used in the form of stable fluorides. By taking sodium fluoride (Naf) as an example, trace amount of Naf is doped in the CIGS absorption layer, so that the concentration of current carriers in the absorption layer can be increased, the growth of crystal grains is promoted, the orientation of the crystal grains is regulated, the generation of a MoSe2 layer in a copper indium gallium selenide/Mo interface is regulated, the energy band structure can be regulated by the presence of a MoSe2 layer, the ohmic contact between the copper indium gallium selenide absorption layer and a Mo bottom electrode layer is realized, and the adhesion between the copper indium gallium selenide absorption layer and the Mo bottom electrode layer is enhanced.
As in the Chinese patent: "thin-film solar cell film deposition apparatus (CN 2018212333540)", which includes a cavity having a receiving space, a sample holder disposed in the receiving space and having an alkali metal material receiving portion, and a heating device for heating the cavity. However, in such a structure, when the deposition effect is not ideal, and the film roll needs to be replaced, the whole chamber needs to be vacuumized again, the time is long, all equipment needs to be stopped for waiting, the process cost is high, and the efficiency is low.
Disclosure of Invention
The invention provides a flexible copper indium gallium selenide thin-film solar cell deposition heat treatment equipment structure which is simple in structure, does not need to repeatedly vacuumize a deposition heat treatment cavity and is high in production efficiency; the technical problems that in the prior art, repeated vacuum pumping is needed during deposition heat treatment, and the production efficiency is low are solved.
The invention also provides a deposition heat treatment device of the flexible copper indium gallium selenide thin-film solar cell, which can monitor the film thickness after deposition heat treatment in real time and can effectively adjust the film thickness so as to improve the conversion rate; the technical problems that the film thickness cannot be monitored and the conversion rate of the battery roll is not high in the prior art are solved.
The invention also provides CIS solar battery car technical heat treatment equipment which can carry out evaporation of one or more alkali metals and has good flexibility; the technical problems that only one alkali metal evaporation can be carried out and the flexibility is low in the prior art are solved.
The technical problem of the invention is solved by the following technical scheme: the utility model provides a flexible copper indium gallium selenide thin-film solar cell deposit thermal treatment equipment, includes the process chamber, is equipped with the rolling chamber respectively and unreels the chamber in the both sides of process chamber, and process chamber, rolling chamber and unreel and all be connected with the vacuum pump on the chamber, treat that the film of deposit thermal treatment is in proper order through unreeling chamber, process chamber and rolling chamber, are equipped with the overhead door between process chamber and rolling chamber, also are equipped with the overhead door between process chamber and unreel the chamber, are equipped with alkali metal heating deposition area in the process chamber. The copper indium gallium selenide film is subjected to alkali metal heating treatment in the process cavity, when the alkali metal deposition effect is found to be unsatisfactory or the winding of the winding shaft is completed, the lifting door can be closed, so that the process cavity is separated from the unwinding cavity or the winding cavity, or the process cavity is separated from the cavities on two sides, the winding shaft is convenient to replace, and the process flow in the process cavity cannot be influenced. Meanwhile, due to the partition of the lifting door, the process cavity is still in a vacuum state, the cavities of the unwinding cavity or the winding cavity on the two sides are small, when the process program is started again, the cavities on the two sides are vacuumized, the speed is high, the efficiency is high, and the problems that the process cavity and the winding and unwinding cavity are required to be vacuumized together, the vacuumizing speed is low, and time and labor are wasted are solved. The vacuum pumping and releasing can be independently carried out on each cavity, the repeated pumping and releasing is not needed, the production state in the process cavity is not needed to be damaged, and only the coiling and releasing is needed to be cut off and the coiling surface is needed to be welded and spliced into a new coiling surface.
Preferably, the alkali metal heating deposition area comprises a heating lamp tube positioned above the film, a metal evaporation source and a selenium source are arranged below the film, the metal evaporation source corresponds to a metal source heating electrode, and the selenium source corresponds to a selenium source heating electrode. Different sources correspond to different heating electrodes and are controlled separately, so that the effect is good.
Preferably, a film thickness instrument probe is arranged in the process chamber and is positioned at the rear side of the alkali metal heating and depositing area and close to one side of the rolling chamber; and a crystal oscillation sheet is also arranged in the alkali metal heating deposition area and is positioned below the thin film. The crystal oscillation plate monitors the evaporation rate of metal atoms during evaporation, and is used as feedback regulation to regulate the heating electrode to control the heating temperature.
Preferably, the metal evaporation sources include metal evaporation sources arranged in parallel in NaF, KF and RbF, and each metal evaporation source corresponds to a respective metal source heating electrode. Different alkali metal sources can be controlled and selected by controlling different heating electrodes, and the flexibility is good. The surface passivation is flattened by changing the PN junction interface characteristic of the battery coil coating through alkali metal deposition heat treatment, and the surface passivation of the PN junction is flattened to obtain a coating with higher conversion rate.
Preferably, the process chamber is provided with a heating electrode at one side close to the unreeling chamber, and the process chamber is provided with a water cooling piece at one side close to the reeling chamber for cooling the evaporated film roll. The front section of the process cavity is provided with an independent heating electrode to adjust temperature parameters so as to preheat a battery roll substrate, and the rear end of the process cavity is provided with a water cooling system to cool a battery roll after evaporation so as to improve the evaporation effect.
Preferably, the lifting door is provided with a sealing strip. The separation of each cavity is ensured, the vacuum degree of the process cavity is ensured, and the production state in the process cavity is not influenced. The lifting door can be a rolling door structure, and the whole lifting door can be folded up, and during the rolling door structure, a layer of sealing film is required to be attached to one side of the lifting door, so that the sealing effect is ensured. The lifting door can also be an up-down lifting door, a blocking plate is arranged between the cavities, the lifting door can slide and lift along a guide rail on the blocking plate, and sealing strips are arranged at two ends of the lifting door to ensure the sealing effect.
Preferably, a PL monitor is arranged in the winding cavity. The PL monitor is a photovoltaic power generation monitor, and monitors the thin film.
Preferably, the process chamber, the winding chamber and the unwinding chamber are respectively provided with a vacuumizing pipeline above, and the vacuumizing pipeline is connected with a vacuum pump through a valve. The independent vacuumizing of each cavity is independently finished, and mutual influence cannot be caused.
Therefore, the deposition heat treatment equipment for the flexible copper indium gallium selenide thin-film solar cell has the following advantages: the structure is simple, each cavity is separated by utilizing the lifting door, a real-time closed-loop feedback control system is added, and the film thickness of the alkali metal after heating and deposition can be monitored in real time; according to the feedback data, the film roll can be replaced at any time, but the production state in the process cavity cannot be influenced, and meanwhile, when the film roll is replaced, the process cavity does not need to be repeatedly vacuumized, so that the efficiency is improved. A plurality of alkali metal evaporation sources are arranged, different electrodes are controlled to heat and different alkali metal evaporation sources are selected, and the alkali metal evaporation flexibility is better.
Drawings
Fig. 1 is a schematic diagram of a deposition heat treatment device of a flexible copper indium gallium selenide thin-film solar cell.
Fig. 2 is a schematic view of the lift gate of fig. 1.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings.
Example (b):
as shown in fig. 1, the deposition heat treatment equipment for the flexible copper indium gallium selenide thin-film solar cell comprises an unreeling cavity 3, a process cavity 4 and a reeling cavity 5 which are sequentially arranged. A lifting door 8 is arranged between the unreeling cavity 3 and the process cavity 4, and a lifting door 8 is also arranged between the reeling cavity 5 and the process cavity 4. The vacuum pump 1 is connected above the unreeling cavity 3, the process cavity 4 and the reeling cavity 5 through a valve 6. Unreel the intracavity and have the workstation in 3, install running roller 9 on the workstation, carry out pending film 16's conveying through running roller 9, also have the workstation in rolling chamber 5, carry out the conveying of film and convolute through running roller 9 on the workstation. The film 16 is monitored by the PL monitor 10 below the film 16 in the winding chamber 5.
The process chamber 4 is mainly used for carrying out an alkali metal heating deposition process on the film, a workbench is also arranged in the process chamber 4, the film 16 is conveyed to the workbench through the roller 9, the substrate of the battery roll is preheated by the heating electrode 13, and the preheated film enters the alkali metal heating deposition area. The film 16 is heated by the lamp tube 12, and the film 16 is arranged below with a NaF evaporation source 19, a KF evaporation source 20, an RbF evaporation source 21 and a selenium source 14 which are arranged in parallel, wherein each alkali metal evaporation source is heated by a different metal source heating electrode 11, and the selenium source is heated by a selenium source heating electrode. Meanwhile, a crystal oscillator piece 23 is arranged beside the metal source heating electrode 11, and the evaporation rate of metal atoms during evaporation is monitored and used for feedback adjustment of the heating electrode. After the evaporation is finished, the thickness of the film is monitored through the film thickness meter probe 15, the cooling water container 22 is installed at the rear section of the process cavity, and the film is cooled through the upper part of the cooling water container and then enters the winding cavity.
As shown in fig. 2, the baffles 7 are arranged between the cavities, a groove is formed below the baffles 7, a guide rail 17 is arranged in the groove, the lifting door 8 is lifted along the guide rail, a sealing strip 18 is arranged between the lifting door and the baffles, and the sealing strip 18 is also arranged below the lifting door, so that the sealing effect is ensured.
When the film unwinding device is used, the film is conveyed to the process cavity through the roller after being unwound by the unwinding cavity, if the reel needs to be replaced, the lifting door falls down, the process cavity is separated from the cavities on the two sides, and the film is cut off. And after the replacement is finished, welding the film roll on the supporting platform again by using resistance welding, and then carrying out a heat treatment process.
Claims (8)
1. A flexible copper indium gallium selenide thin-film solar cell deposition heat treatment device is characterized in that: the film deposition and heat treatment device comprises a process cavity, wherein a winding cavity and an unwinding cavity are respectively arranged on two sides of the process cavity, vacuum pumps are respectively connected to the process cavity, the winding cavity and the unwinding cavity, a film to be deposited and heat treated sequentially passes through the unwinding cavity, the process cavity and the winding cavity, a lifting door is arranged between the process cavity and the winding cavity, a lifting door is also arranged between the process cavity and the unwinding cavity, and an alkali metal heating and deposition area is arranged in the process cavity.
2. The deposition heat treatment equipment for the flexible CIGS thin-film solar cell according to claim 1, wherein: the alkali metal heating deposition area comprises a heating lamp tube positioned above the film, a metal evaporation source and a selenium source are arranged below the film, the metal evaporation source corresponds to a metal source heating electrode, and the selenium source corresponds to a selenium source heating electrode.
3. The deposition heat treatment equipment for the flexible CIGS thin-film solar cell according to claim 2, wherein: the metal evaporation sources comprise metal evaporation sources which are arranged in parallel on NaF, KF and RbF, and each metal evaporation source corresponds to a respective metal source heating electrode.
4. The deposition heat treatment equipment for the flexible CIGS thin-film solar cell according to claim 1, 2 or 3, wherein: a film thickness instrument probe is arranged in the process cavity and is positioned at the rear side of the alkali metal heating and depositing area and close to one side of the rolling cavity; and a crystal oscillation sheet is also arranged in the alkali metal heating deposition area and is positioned below the thin film.
5. The deposition heat treatment equipment for the flexible CIGS thin-film solar cell according to claim 1, 2 or 3, wherein: the process chamber is provided with a heating electrode at one side close to the unreeling chamber, and a water cooling piece is arranged at one side close to the reeling chamber to cool the evaporated film roll.
6. The deposition heat treatment equipment for the flexible CIGS thin-film solar cell according to claim 1, 2 or 3, wherein: the lifting door is provided with a sealing strip.
7. The deposition heat treatment equipment for the flexible CIGS thin-film solar cell according to claim 1, 2 or 3, wherein: and a PL monitor is arranged in the winding cavity.
8. The deposition heat treatment equipment for the flexible CIGS thin-film solar cell according to claim 1, 2 or 3, wherein: and vacuumizing pipelines are respectively arranged above the process cavity, the winding cavity and the unwinding cavity and are connected with a vacuum pump through valves.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011489439.7A CN112695277A (en) | 2020-12-16 | 2020-12-16 | Deposition heat treatment equipment for flexible copper indium gallium selenide thin-film solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011489439.7A CN112695277A (en) | 2020-12-16 | 2020-12-16 | Deposition heat treatment equipment for flexible copper indium gallium selenide thin-film solar cell |
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| CN112695277A true CN112695277A (en) | 2021-04-23 |
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| CN202011489439.7A Pending CN112695277A (en) | 2020-12-16 | 2020-12-16 | Deposition heat treatment equipment for flexible copper indium gallium selenide thin-film solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114883430A (en) * | 2022-05-19 | 2022-08-09 | 尚越光电科技股份有限公司 | Alkali metal post-treatment equipment for roll-to-roll flexible CIGS (copper indium gallium selenide) absorption layer |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090116016A (en) * | 2008-05-06 | 2009-11-11 | 주식회사 디알테크넷 | Divice for opening and closing, thin film forming apparatus for film shape having the same and maintentance method |
| DE102012108742A1 (en) * | 2012-06-04 | 2013-12-05 | Von Ardenne Anlagentechnik Gmbh | Transporting a band-shaped material in a vacuum treatment plant, comprises e.g. treating band-shaped material in many vacuum treatment sections, and transporting the band-shaped material in a transport path within vacuum treatment section |
| CN204490985U (en) * | 2015-02-18 | 2015-07-22 | 南京汇金锦元光电材料有限公司 | Flexible transparent conductive film and preparation facilities thereof |
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| CN110004427A (en) * | 2019-05-14 | 2019-07-12 | 南京汇金锦元光电材料有限公司 | Flexible continuity magnetron sputtering deposition plating work chamber partition method |
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| CN114883430B (en) * | 2022-05-19 | 2024-04-26 | 尚越光电科技股份有限公司 | Roll-to-roll flexible CIGS absorbing layer alkali metal post-treatment equipment |
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