CN112694263A - Molecular ferroelectric composite CsPbBr3Photoelectric thin film material, preparation method and application - Google Patents

Molecular ferroelectric composite CsPbBr3Photoelectric thin film material, preparation method and application Download PDF

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CN112694263A
CN112694263A CN202110176863.4A CN202110176863A CN112694263A CN 112694263 A CN112694263 A CN 112694263A CN 202110176863 A CN202110176863 A CN 202110176863A CN 112694263 A CN112694263 A CN 112694263A
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cspbbr
photoelectric
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张刚华
杜维
房永征
侯京山
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Shanghai Institute of Technology
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    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
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    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3405—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of organic materials
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
    • C03C17/3447—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a halide
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/42—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating of an organic material and at least one non-metal coating
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    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
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    • C03C2218/116—Deposition methods from solutions or suspensions by spin-coating, centrifugation
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    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment

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Abstract

The invention discloses a molecular ferroelectric composite CsPbBr3Photoelectric thin film material, preparation method and application. The structure of the photoelectric thin film material sequentially comprises a transparent conductive substrate, an electron transmission layer, and a molecular ferroelectric composite CsPbBr from bottom to top3A thin film and a hole transport layer; the preparation method comprises the following steps: firstly, preparing an electron transmission layer on a transparent conductive substrate; second, molecular ferroelectric and CsPbBr3Preparing a solution by taking DMSO as a solvent, spin-coating the solution on an electron transport layer, and forming molecular ferroelectric composite CsPb Br after vacuum annealing treatment3A film; finally, spin-coating PEDOT (PSS), and obtaining the molecular ferroelectric composite Csp bBr after vacuum annealing treatment3Photoelectric thin film material. The photoelectric property of the photoelectric film material is greatly improved, and the photoelectric film material can be widely applied to photoelectric detectors and semiconductor light-emitting diodes and has high economic value.

Description

Molecular ferroelectric composite CsPbBr3Photoelectric thin film material, preparation method and application
Technical Field
The invention relates to a molecular ferroelectric composite CsPbBr3Photoelectric film material, preparation method and application, belonging to the technical field of photoelectric detection.
Background
The photoelectric detector is aA semiconductor device for directly converting an optical signal into an electrical signal. With the continuous rise of automotive driving, environmental monitoring, optical communication, and biosensors in recent decades, the demand for excellent photodetectors has become more prominent. The main current photoelectric detection materials are: silicon, group III-V compound semiconductors, organic polymers, colloidal quantum dots. However, the silicon-based detector has low quantum efficiency and responsivity, the III-V group compound semiconductor has low response speed and low mechanical strength, the synthesis of organic polymers and colloidal quantum dots is difficult to control, the absorption is insufficient, and the service life of a current carrier is short, so that the practical application of the silicon-based detector is severely limited. In recent years, the perovskite material CsPbBr3The material is considered to be one of the most potential photoelectric detection materials due to its excellent photoelectric characteristics (direct band gap, large absorption coefficient, long electron-hole diffusion length, etc.). However, CsPbBr3Face several problems as follows: the device has poor stability and short service life, is easily corroded by water and oxygen, interfered by ultraviolet radiation and the like, thereby causing the service life of the device to be deteriorated, and causing the serious obstruction to large-scale practical application of the device.
To break through CsPbBr3The above problems must be overcome in the area of photodetection by the base photodetector. Currently solving the problem of CsPbBr3There are two main approaches to stability: firstly, the preparation and ion doping substitution of a new material are realized, but the structure and the performance of the new material are difficult to predict by the method; secondly, the CsPbBr is simultaneously realized by compounding materials by utilizing an energy band regulation strategy and an energy band matching principle3High stability and high photoelectric properties. At present, compounding of materials is carried out through an energy band matching principle, so that the photoelectric property of the materials is greatly improved, and the important direction of research is provided.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to obtain high-performance CsPbBr by compounding materials through the theory of energy band matching3A base photovoltaic thin film material.
In order to solve the problems, the invention provides a molecular ferroelectric composite CsPbBr3The photoelectric film material comprises a transparent conductive substrate, an electron transmission layer, and a molecular ferroelectric compound from bottom to topSynthetic CsPbBr3A thin film and a hole transport layer.
Preferably, the transparent conductive substrate is ITO conductive glass, FTO conductive glass, or an organic conductive film; the material of the electron transport layer is TiO2Or ZnO; the molecular ferroelectric is [ C ]6N2H18][SbI5]Or HDA-BiI5(ii) a And the material of the hole transport layer is PEDOT PSS.
The invention also provides the molecular ferroelectric composite CsPbBr3The preparation method of the photoelectric thin film material comprises the following steps:
step 1: preparing an electron transport layer on a transparent conductive substrate;
step 2: with molecular ferroelectrics and CsPbBr3Preparing a solution by taking DMSO as a solvent as a solute, spin-coating the solution on the electron transport layer obtained in the step 1, and performing vacuum annealing treatment to form the molecular ferroelectric composite CsPbBr3A film;
and step 3: preparing a hole transport layer on the composite film to obtain the molecular ferroelectric composite CsPbBr3Photoelectric thin film material.
Preferably, the material of the electron transport layer in the step 1 is n-type semiconductor TiO2The preparation method of the electron transport layer comprises the following steps: mixing the tetranyctate titanate, diethanol amine and polyethylene glycol, adding acetic acid and deionized water, uniformly mixing to obtain a mixed solution, standing the mixed solution, and then spin-coating the mixed solution on clean ITO conductive glass; calcining at 400-600 ℃ for 30 min-1 h to obtain the TiO2The conductive substrate of the electron transmission layer is cleaned and dried for later use.
More preferably, the volume ratio of the tetrakistitanate, diethanolamine, acetic acid, and deionized water is 2:1:0.6: 0.75; the ratio of the polyethylene glycol to the tetracarboxylate is 0.012 g: 1 mL.
Preferably, the spin coating process conditions are as follows: the rotation speed of the spin coater is 2500-3000 rpm/min, the number of spin coating times is 3-4, the amount of spin coating is 50-60 mu L/time, and the spin coating time is 20-80 s/time.
Preferably, the preparation of the molecular ferroelectric in the step 2The preparation method comprises the following steps: oxide Sb2O3Or Bi2O3Dissolving in excessive hydroiodic acid to obtain iodide solution, and adding corresponding organic ligand 2-methyl-1, 5-pentanediamine or H2N(CH2)6NH2Heating and reacting for 10-12 h at 100-140 ℃, cooling to room temperature, washing with ethyl acetate, and filtering to obtain a solid, namely the molecular ferroelectric.
More preferably, the mass ratio of the oxide to the organic ligand is 1: 1.5-1.5: 1; the mass fraction of the hydroiodic acid is 40-50%; the molar ratio of the hydroiodic acid to the oxide is 2: 1-5: 1.
Preferably, the molecular ferroelectric, CsPbBr, in the solution of step 23And DMSO in a ratio of 0.25-1 g: 0.25-1 g: 0.4-1 mL.
Preferably, the spin coating amount of the mixed solution and the solution in the step 2 is 550-600 μ L, and the spin coating process conditions are as follows: the rotation speed of the spin coater is 2500-3000 rpm, and the spin coating time is 20-80 s.
Preferably, the specific process of the vacuum annealing treatment in the step 2 is as follows: heating to 100-120 ℃ at the speed of 1-2 ℃/min, calcining for 2-3 h, and then cooling to room temperature under vacuum.
Preferably, the method for preparing the hole transport layer in step 3 is as follows: spin-coating PEDOT (PSS) 50-60 mu L by using a spin coater, wherein the rotation speed of the spin coater is set to be 2500-3000 rpm, and the spin-coating time is set to be 20-60 s; and then carrying out vacuum annealing treatment to form the hole transport layer.
Preferably, the vacuum annealing treatment comprises the following specific processes: heating to 130-150 ℃ at the speed of 1-2 ℃/min, calcining for 15-20 min, and then cooling to room temperature under vacuum.
The invention also provides the molecular ferroelectric composite CsPbBr3Application of photoelectric thin film material.
Preferably, the applications include applications in the manufacture of ultraviolet photodetectors, blue-violet light emitting diodes, LEDs, and inorganic perovskite solar cells.
Compared with the prior art, the invention has the beneficial effects that:
1. the molecular ferroelectric composite CsPbBr of the invention3Photoelectric thin film material prepared by mixing CsPbBr3And molecular ferroelectric [ C ]6N2H18][SbI5]Or HDA-BiI5After recombination, CsPbBr can be added3Acts as a packaging to improve the stability of the perovskite detector.
2. The molecular ferroelectric composite CsPbBr of the invention3Photoelectric thin film material, compared with CsPbBr alone3The photo-generated current and photo-generated voltage of the photoelectric thin film material are greatly improved, and the photoelectric thin film material can be widely applied to photoelectric detectors and semiconductor light-emitting diodes and has high economic value.
Drawings
FIG. 1 shows CsPbBr in an embodiment of the present invention3(CPB), molecular ferroelectric [ C ]6N2H18][SbI5]And HDA-BiI5XRD pattern of (a);
FIG. 2 is [ C ] prepared in example 1 of the present invention6N2H18][SbI5]Comparing IT curves of the composite CPB photoelectric thin film material and a reference substance under zero bias;
FIG. 3 is a HDA-BiI prepared in example 2 of the present invention5Comparing IT curves of the composite CPB photoelectric thin film material and a reference substance under zero bias;
FIG. 4 is [ C ] prepared in example 1 of the present invention6N2H18][SbI5]Comparing IV curves of the composite CPB photoelectric film material and a reference substance; wherein sample name-D represents the IV curve of the sample under dark conditions, and sample name-L represents the IV curve of the sample under light conditions;
FIG. 5 is a HDA-BiI prepared in example 2 of the present invention5Comparing IV curves of the composite CPB photoelectric film material and a reference substance; wherein sample name-D represents the IV curve of the sample under dark conditions, and sample name-L represents the IV curve of the sample under light conditions;
fig. 6 is a schematic structural diagram of the photovoltaic thin film material of the present invention.
Detailed Description
In order to make the invention more comprehensible, preferred embodiments are described in detail below with reference to the accompanying drawings.
Example 1
Molecular ferroelectric composite CsPbBr3Photovoltaic thin film device of n-type semiconductor TiO2The electron transport layer is PEDOT PSS as hole transport layer, the intermediate layer is CsPbBr3A composite molecular ferroelectric thin film. The preparation method comprises the following steps:
1. preparation of TiO2Electron transport layer:
(1) mixing and fully stirring tetranyctate (2mL), diethanolamine (1mL) and polyethylene glycol (0.024g), adding acetic acid (0.6mL) and deionized water (0.75mL) into a clean beaker, stirring to uniformly mix, then mixing the two solutions to fully stir and uniformly mix, standing the solution for more than 16h, taking 50-60 mu L, and spin-coating on a clean ITO conductive glass substrate. The number of spin-coating times is three to four. The spin rate of the spin coater was set at 3000rpm and the spin coating time was 20 seconds.
(2) Coating the above with TiO2And placing the conductive substrate of the precursor in a muffle furnace for calcining. Calcining at 450 deg.C, maintaining for 75min, and cooling to room temperature to obtain the final product coated with TiO2A conductive substrate of an electron transport layer.
2. Preparation of molecular ferroelectric [ C ]6N2H18][SbI5]：
Sb2O3(0.146g) was dissolved in an excess of hydroiodic acid (50 wt%) to prepare SbI3And (3) solution. Subsequently, 2-methyl-1, 5-pentanediamine (0.117g) was added. After the mixture is stirred evenly, the mixed solution is transferred to a Teflon stainless steel high-pressure reaction kettle and reacts for 12 hours at the temperature of 120 ℃. After the reaction is finished, after the reaction kettle is cooled to room temperature, repeatedly cleaning the reaction kettle with ethyl acetate, and filtering to obtain the molecular ferroelectric [ C ]6N2H18][SbI5]And (3) sampling.
3. Preparation of CsPbBr3(abbreviated CPB):
DMSO (3mL) was added to a 100mL beaker, to which was then added PbBr2(0.697g), CsBr (0.404g), stirred vigorously for 40min,hydrobromic acid (3mL) was then added dropwise and the solution was immediately observed to turn orange and turbid, indicating CsPbBr3Continuously stirring for reaction for 30min, and filtering to obtain solid CsPbBr3。
4. 0.5g of [ C ] was weighed out in a molar ratio of 1.3:1, respectively6N2H18][SbI5]And 0.25g CsPbBr3Dissolved in 0.4mL DMSO, and stirred magnetically until the solution is fully dissolved, and the obtained solution is ready for use.
5. 0.25g CsPbBr was weighed3Dissolved in 0.4mL DMSO, and stirred magnetically until the solution is fully dissolved, and the obtained solution is ready for use.
6. Preparing the TiO prepared in the step 12And (3) carrying out spin coating on the conductive substrate of the electron transport layer by using the two solutions prepared in the step (4) and the step (5) to form a film on the conductive substrate, wherein the spin coating amount is 588 mu L, the rotating speed of a spin coater is set to be 3000rpm, and the spin coating time is 80s, so that a spin-coated sample is obtained.
7. And putting the spin-coated sample in a tube furnace, vacuumizing to-0.1 MPa, setting the temperature at 120 ℃, preserving the heat for 2 hours, and carrying out vacuum drying at the heating rate of 1 ℃/min.
8. And (3) quenching to room temperature in vacuum, and spin-coating 50 mu L of PEDOT (PSS) material in a spin coater at the rotating speed of 3000rpm for 60 s.
9. And (3) placing the sample coated with the hole conduction layer into a tubular furnace, heating to 150 ℃ under a vacuum condition, and keeping the temperature for 15min, wherein the heating rate is set to be 1 ℃/min.
10. Quenching to room temperature in vacuum to obtain the product [ C6N2H18][SbI5]Composite CsPbBr3The photoelectric film material comprises a transparent conductive substrate, an electron transport layer, and a molecular ferroelectric [ C ] from bottom to top6N2H18][SbI5]Composite CsPbBr3Thin film and hole transport layer as shown in fig. 6.
Example 2
Molecular ferroelectric composite CsPbBr3Photovoltaic thin film device of n-type semiconductor TiO2The electron transport layer is PEDOT PSS as hole transport layer, the intermediate layer is CsPbBr3Composite molecular ferroelectricA bulk film. The preparation method comprises the following steps:
1. preparation of TiO2Electron transport layer:
(1) mixing and stirring tetranyctate (2mL), diethanolamine (1mL) and polyethylene glycol (0.024g), adding a mixed solution of acetic acid (0.6mL) and deionized water (0.75mL), fully stirring to uniformly mix the two solutions, standing the solution for more than 16h, and spin-coating 50-60 mu L of the solution on a clean ITO conductive glass substrate. The number of spin-coating times is three to four. The spin coater speed was set at 3000rpm and the spin coating time was 20 seconds.
(2) Coating the above with TiO2And placing the conductive substrate of the precursor in a muffle furnace for calcining. Calcining at 550 deg.C, maintaining for 45min, and cooling to room temperature to obtain the final product2An electron transport layer.
2. Preparation of molecular ferroelectric HDA-BiI5：
Adding Bi2O3(0.116g) was dissolved in an excess of hydroiodic acid (45 wt%) to prepare BiI3And (3) solution. Subsequently, H is added2N(CH2)6NH2(0.117 g). After the mixture is stirred evenly, the mixed solution is transferred to a Teflon stainless steel high-pressure reaction kettle to react for 12 hours at the temperature of 120 ℃. After the reaction is finished, after the reaction kettle is cooled to room temperature, repeatedly cleaning the reaction kettle by using ethyl acetate, and filtering to obtain HAD-BiI5A deep red single crystal.
3. Preparation of CsPbBr3(abbreviated CPB):
DMSO (3mL) was added to a 100mL beaker followed by PbBr2(0.697g), CsBr (0.404g), vigorously stirred for 40min, then hydrobromic acid (3mL) was added dropwise, and the solution was immediately observed to turn orange and turbid, indicating CsPbBr3Is formed, is continuously stirred and reacts for 30min, and is filtered to obtain solid CsPbBr3。
4. 0.5g of HDA-BiI was weighed out in a molar ratio of 1.2:1, respectively5And 0.25g CsPbBr3Dissolved in 0.4mL DMSO, and stirred magnetically until the solution is fully dissolved, and the obtained solution is ready for use.
5. 0.25g CsPbBr was weighed3Dissolving in 0.4mL DMSO, stirring with magnetic force until dissolving completely,the resulting solution is ready for use.
6. Preparing TiO from the step 12And (3) carrying out spin coating on the conductive substrate of the electron transmission layer to form a film on the conductive substrate by using the two solutions prepared in the step (4) and the step (5), wherein the spin coating amount is 588 mu L, the rotating speed of a spin coater is set to 3000rpm, and the spin coating time is 80s, so that a spin-coated sample is obtained.
7. And (3) placing the spin-coated sample in a tube furnace, vacuumizing the tube to be below-0.1 MPa, and sealing and vacuumizing the tube. Setting the temperature at 120 ℃, keeping the temperature for 2h, and carrying out vacuum drying at the heating rate of 1 ℃/min.
8. And (3) quenching to room temperature in vacuum, spin-coating 50 mu L of PEDOT (PSS) material, and setting the parameters of a spin coater at 3000rpm for 60 s.
9. And (3) placing the sample coated with the hole conduction layer into a tube furnace, slowly heating to 150 ℃ under a vacuum condition, and then keeping the temperature for 15min, wherein the heating rate is set to be 1 ℃/min.
10. Quenching to room temperature in vacuum to obtain HDA-BiI5The composite CPB photoelectric film material sequentially comprises a transparent conductive substrate, an electron transmission layer and a molecular ferroelectric HDA-BiI from bottom to top5Composite CsPbBr3Thin film and hole transport layer as shown in fig. 6.
And (3) performance testing:
1. CsPbBr prepared in example was detected using X-ray diffractometer3Molecular ferroelectric [ C ]6N2H18][SbI5]And HDA-BiI5The XRD pattern of the crystal structure of (1) is shown in FIG. 1, and all the obtained samples are pure phases.
2. Molecular ferroelectric composite CsPbBr prepared in example was tested using KEITHLEY 2450Source Meter3The photoelectric property of the photoelectric film material is expressed by pure CsPbBr3The optoelectronic thin film material was used as a control, wherein [ C ] prepared in example 16N2H18][SbI5]Composite CsPbBr3FIG. 2 shows a comparison of IT curves of photoelectric thin film material and reference substance under zero bias, in which the photo-generated current of the sample after recombination is relative to that of pure CsPbBr3A 75-fold increase for the control; HDA-BiI prepared in example 25Composite CsPbBr3FIG. 3 shows a comparison of IT curves of photoelectric thin film material and reference substance under zero bias, in which the photo-generated current of the sample after recombination is relative to that of pure CsPbBr3The increase was 14 times for the control; [ C ] prepared in example 16N2H18][SbI5]Composite CsPbBr3FIG. 4 shows the comparison of IV curves of the photoelectric thin film material and the reference substance, wherein the photogenerated voltage of the sample after compounding is relative to that of pure CsPbBr3436-fold improvement for the control; HDA-BiI prepared in example 25Composite CsPbBr3FIG. 5 shows the comparison of IV curves of the photoelectric thin film material and the reference substance, wherein the photogenerated voltage of the sample after recombination is relative to that of pure CsPbBr3There was a 104-fold increase for the control.
While the present invention has been described in detail in connection with the above-described embodiments, it is to be understood that the present invention is not limited to those precise embodiments, and that various changes and modifications may be effected therein by one of ordinary skill in the pertinent art without departing from the scope or spirit of the present invention.

Claims (8)

1. Molecular ferroelectric composite CsPbBr3The photoelectric film material is characterized by comprising a transparent conductive substrate, an electron transmission layer and a molecular ferroelectric composite CsPbBr sequentially from bottom to top3A thin film and a hole transport layer.
2. The molecular ferroelectric composite CsPbBr of claim 13The photoelectric film material is characterized in that the transparent conductive substrate is ITO conductive glass, FTO conductive glass or an organic conductive film; the material of the electron transport layer is TiO2Or ZnO; the molecular ferroelectric is [ C ]6N2H18][SbI5]Or HDA-BiI5(ii) a And the material of the hole transport layer is PEDOT PSS.
3. The molecular ferroelectric composite CsPbBr of claim 1 or 23The preparation method of the photoelectric film material is characterized by comprising the following steps:
step 1: preparing an electron transport layer on a transparent conductive substrate;
step 2: with molecular ferroelectrics and CsPbBr3Preparing a solution by taking DMSO as a solvent as a solute, spin-coating the solution on the electron transport layer obtained in the step 1, and performing vacuum annealing treatment to form the molecular ferroelectric composite CsPbBr3A film;
and step 3: in the molecular ferroelectric compound CsPbBr3Preparing a hole transport layer on the film to obtain the molecular ferroelectric composite CsPbBr3Photoelectric thin film material.
4. The molecular ferroelectric composite CsPbBr of claim 33The preparation method of the photoelectric thin film material is characterized in that the preparation method of the molecular ferroelectric in the step 2 comprises the following steps: oxide Sb2O3Or Bi2O3Dissolving in excessive hydroiodic acid to obtain iodide solution, and adding corresponding organic ligand 2-methyl-1, 5-pentanediamine or H2N(CH2)6NH2Heating and reacting for 10-12 h at 100-140 ℃, cooling to room temperature, washing with ethyl acetate, and filtering to obtain a solid, namely the molecular ferroelectric.
5. The molecular ferroelectric composite CsPbBr of claim 43The preparation method of the photoelectric thin film material is characterized in that the mass ratio of the oxide to the organic ligand is 1: 1.5-1.5: 1; the mass fraction of the hydroiodic acid is 40-50%; the molar ratio of the hydroiodic acid to the oxide is 2: 1-5: 1.
6. The molecular ferroelectric composite CsPbBr of claim 33The preparation method of the photoelectric thin film material is characterized in that the molecular ferroelectric and CsPbBr in the solution obtained in the step 23And DMSO in a ratio of 0.25-1 g: 0.25-1 g: 0.4-1 mL.
7. As set forth in claim 1 or 2The molecular ferroelectric compound CsPbBr3Application of photoelectric thin film material.
8. The use according to claim 7, wherein the use comprises use in the manufacture of ultraviolet photodetectors, blue-violet light emitting diodes, LEDs, and inorganic perovskite solar cells.
CN202110176863.4A 2021-02-09 2021-02-09 Molecular ferroelectric composite CsPbBr3Photoelectric thin film material, preparation method and application Pending CN112694263A (en)

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Citations (7)

* Cited by examiner, † Cited by third party
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