CN112688160A - Wide bandgap semiconductor device and preparation method thereof, detector and modulator - Google Patents
Wide bandgap semiconductor device and preparation method thereof, detector and modulator Download PDFInfo
- Publication number
- CN112688160A CN112688160A CN202011553364.4A CN202011553364A CN112688160A CN 112688160 A CN112688160 A CN 112688160A CN 202011553364 A CN202011553364 A CN 202011553364A CN 112688160 A CN112688160 A CN 112688160A
- Authority
- CN
- China
- Prior art keywords
- bandgap semiconductor
- wide bandgap
- semiconductor structure
- wide
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The embodiment of the invention discloses a wide bandgap semiconductor device and a preparation method thereof, a detector and a modulator, wherein the wide bandgap semiconductor device comprises: a pump light source and a wide bandgap semiconductor structure; the pumping light source is used for emitting pumping light beams; the wide bandgap semiconductor structure is positioned on a propagation path of the pump light beam and used for receiving the pump light beam and generating photon-generated carriers based on the pump light beam; the photon energy of the pump beam is larger than or equal to the energy gap of the wide-bandgap semiconductor structure. The invention solves the technical problems that certain types of wide bandgap semiconductors cannot be prepared by adopting a doping mode and the application performance is reduced due to the defect of the wide bandgap semiconductor material caused by doping in the prior art.
Description
Technical Field
The embodiment of the invention relates to the field of semiconductor devices, in particular to a wide bandgap semiconductor device, a preparation method thereof, a detector and a modulator.
Background
Semiconductor materials constitute "skyscrapers" of contemporary electronic devices, which are widely used in transistors, solar cells, diodes, integrated circuits, quantum devices, and the like.
Wide bandgap semiconductor materials have a wider energy gap (typically 2-4 ev) than conventional semiconductors (e.g., silicon and gallium arsenide), which allows them to withstand higher operating temperatures, operating voltages and response frequencies in practical applications. The application performance of wide bandgap semiconductor materials is usually improved by n-type or p-type doping.
However, the introduction of dopants often faces two unavoidable problems: 1. certain types of semiconductors are difficult to fabricate, such as n-type diamond; 2. doping can cause defects in wide bandgap semiconductor materials that degrade performance. For example, there has been a technical difficulty in effectively doping the p-type of the third generation semiconductor material gallium nitride (GaN), and the hole concentration thereof is difficult to exceed 1018cm-3And with magnesium doping, hole mobility decreases from several hundred cm2The V.s is reduced to a few cm2V.s. The existence of the two problems often increases the economic cost and the time cost, and restricts the performance application of the wide bandgap semiconductor material, so that a novel technology for modulating the wide bandgap semiconductor device is urgently needed, and the technical bottleneck is broken through.
Disclosure of Invention
In view of this, embodiments of the present invention provide a wide bandgap semiconductor device, a method for manufacturing the same, a detector and a modulator, so as to solve the technical problems that some types of wide bandgap semiconductors cannot be manufactured by doping and the application performance is reduced due to the defect of the wide bandgap semiconductor material caused by doping in the prior art.
In a first aspect, an embodiment of the present invention provides a wide bandgap semiconductor device, including: a pump light source and a wide bandgap semiconductor structure;
the pump light source is used for emitting pump light beams;
the wide bandgap semiconductor structure is located on a propagation path of the pump beam and used for receiving the pump beam and generating photon-generated carriers based on the pump beam;
wherein photon energy of the pump beam is greater than or equal to an energy gap of the wide bandgap semiconductor structure.
Optionally, the brightness of the pump beam is adjustable;
the wide-bandgap semiconductor structure is used for generating photon-generated carriers with different carrier concentrations according to the pump light beams with different brightness, and the plasma resonance frequency of the wide-bandgap semiconductor structure is in a microwave frequency band or a terahertz frequency band.
Optionally, the wide bandgap semiconductor device includes a plurality of wide bandgap semiconductor structures, and the plurality of wide bandgap semiconductor structures are arranged in an array;
the wide bandgap semiconductor device comprises a plurality of the pumping light sources, the pumping light sources are arranged in an array manner, and the pumping light sources correspond to the wide bandgap semiconductor structures one to one.
Optionally, the brightness of the pump beams emitted by at least two of the pump light sources is different.
In a second aspect, an embodiment of the present invention provides a detector, including the wide bandgap semiconductor device of the first aspect, and further including a detection structure;
the detection method comprises the steps that a light beam to be detected enters the wide bandgap semiconductor structure at a first frequency, when the first frequency of the light beam to be detected is the same as a first plasma resonance frequency of the wide bandgap semiconductor structure, the wide bandgap semiconductor structure absorbs the light beam to be detected, and the detection structure is used for detecting frequency information and energy information of the light beam to be detected.
Optionally, the detection structure comprises a resonant cavity or a resonant circuit.
In a third aspect, an embodiment of the present invention provides a modulator, including the wide bandgap semiconductor device of the first aspect, and further including a signal generator;
the signal generator is used for generating a basic signal of a microwave frequency band or a terahertz frequency band, the frequency of the basic signal is a second frequency, and the period is a first period;
the period of the pump beam is a second period, and the second period is different from the first period;
when the base signal is incident on the wide bandgap semiconductor structure, the wide bandgap semiconductor structure modulates the base signal into a mixed signal, where the mixed signal includes information of the first period, information of the second period, and information of a full width at half maximum of a dielectric loss peak of the wide bandgap semiconductor structure.
In a fourth aspect, an embodiment of the present invention provides a method for manufacturing a wide bandgap semiconductor device, which is used to manufacture the wide bandgap semiconductor device in the first aspect, and includes:
providing a pumping light source, wherein the pumping light source is used for emitting a pumping light beam;
providing a wide bandgap semiconductor structure, wherein the wide bandgap semiconductor structure is positioned on a propagation path of the pump light beam;
and adjusting the brightness of the pump beam to excite the wide-bandgap semiconductor structure to generate photon-generated carriers.
Optionally, after adjusting the brightness of the pump beam to excite the wide bandgap semiconductor structure to generate photogenerated carriers, the method further includes:
and adjusting the brightness of the pump light beam to control the wide bandgap semiconductor structure to generate photon-generated carriers with different carrier concentrations, wherein the plasma resonance frequency of the wide bandgap semiconductor structure is in a microwave frequency band or a terahertz frequency band.
According to the wide bandgap semiconductor device, the preparation method, the detector and the modulator provided by the embodiment of the invention, the wide bandgap semiconductor structure is arranged on the propagation path of the pumping light beam, the photon energy of the pumping light beam is greater than or equal to the energy gap of the wide bandgap semiconductor structure, the wide bandgap semiconductor structure receives the pumping light beam and generates photon-generated carriers based on the pumping light beam, and the wide bandgap semiconductor device with the plasma resonance frequency is prepared by adopting a method of exciting the wide bandgap semiconductor by the pumping light to generate the photon-generated carriers. The method solves the technical problems that certain types of wide bandgap semiconductors cannot be prepared by adopting a doping mode and the application performance is reduced due to the defect of the wide bandgap semiconductor material caused by doping in the prior art, improves the application performance of the wide bandgap semiconductor material and provides a brand new preparation method for preparing the wide bandgap semiconductor material.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments made with reference to the following drawings:
fig. 1 is a schematic structural diagram of a wide bandgap semiconductor device according to an embodiment of the present invention;
fig. 2 is a dielectric loss spectrum of a wide bandgap semiconductor material according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of another wide bandgap semiconductor device according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a detector according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a modulator according to an embodiment of the present invention;
fig. 6 is a flowchart of a method for manufacturing a wide bandgap semiconductor device according to an embodiment of the present invention;
fig. 7 is a flowchart of a method for manufacturing a wide bandgap semiconductor device according to another embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be fully described by the detailed description with reference to the accompanying drawings in the embodiments of the present invention. It is obvious that the described embodiments are a part of the embodiments of the present invention, not all embodiments, and all other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without inventive efforts fall within the scope of the present invention.
Examples
The embodiment of the invention provides a wide bandgap semiconductor device. Fig. 1 is a schematic structural diagram of a wide bandgap semiconductor device according to an embodiment of the present invention, and as shown in fig. 1, the wide bandgap semiconductor device includes: a pumping light source 1 and a wide bandgap semiconductor structure 2; the pumping light source 1 is used for emitting a pumping light beam A; the wide bandgap semiconductor structure 2 is located on a propagation path of the pump beam a, and is configured to receive the pump beam a and generate photo-generated carriers based on the pump beam a (as shown in fig. 1); the photon energy of the pump beam a is greater than or equal to the energy gap of the wide bandgap semiconductor structure 2.
For example, an excimer laser with a wavelength of 193nm is used as the pumping beam, and the single photon energy reaches more than 5 electron volts, and can be used for a wide bandgap semiconductor structure with a single photon energy less than 5 electron volts, so that the pumping light is used for exciting the wide bandgap semiconductor structure to generate a photogenerated carrier.
By arranging the wide bandgap semiconductor structure 2 on the propagation path of the pumping beam a, the pumping beam a excites valence band electrons of the wide bandgap semiconductor structure 2 to conduction band electrons to form free photon-generated carriers, and the pumping beam B forms an optical field in the wide bandgap semiconductor structure 2, so that the carriers in the wide bandgap semiconductor structure 2 are caused to generate coherent resonance under the optical field, and the wide bandgap semiconductor structure 2 generates a specific plasma resonance frequency (characteristic frequency), thereby obtaining the wide bandgap semiconductor device with the characteristic frequency.
In summary, the embodiments of the present invention provide a wide bandgap semiconductor device, in which a wide bandgap semiconductor structure is disposed on a propagation path of a pump beam, photon energy of the pump beam is greater than or equal to an energy gap of the wide bandgap semiconductor structure, the wide bandgap semiconductor structure receives the pump beam and generates a photo-generated carrier based on the pump beam, and the wide bandgap semiconductor device capable of adjusting a plasma resonance frequency is prepared by using a method of exciting the wide bandgap semiconductor with the pump beam to generate the photo-generated carrier. The method solves the technical problems that certain types of wide bandgap semiconductors cannot be prepared by adopting a doping mode and the application performance is reduced due to the defect of the wide bandgap semiconductor material caused by doping in the prior art, improves the application performance of the wide bandgap semiconductor material, provides a brand-new preparation method for preparing the wide bandgap semiconductor material, and enriches the application of the wide bandgap semiconductor material.
The plasma resonance frequency of the wide-bandgap semiconductor material and the concentration of a photo-generated carrier thereof have the following corresponding relationship:
ωp＝(npee2/ε0m*)1/2
ωpis the plasma resonance frequency, n is the carrier concentration, e is the unit charge, ε0For vacuum dielectric constant, m is the effective mass.
The brightness of the pump beam determines the carrier concentration n, and the higher the brightness of the pump beam is, the larger the carrier concentration n is, wherein the brightness unit of the pump beam is photon number per second. Referring to the above formula, the carrier concentration n directly affects the plasmon resonance frequency ωpThus, the plasmon resonance frequency ω can be changed by changing the carrier concentration n by changing the brightness of the pump beamp。
Secondly, the signal light is at the photon-generated carrier plasma resonance frequency omega of the wide-bandgap semiconductor structurepThe material has extremely strong energy absorption behavior, namely dielectric absorption, and can be used for dielectric detection and light quantum devices by utilizing the characteristics of the material. Fig. 2 is a dielectric loss spectrum of a wide bandgap semiconductor material according to an embodiment of the present invention. As shown in fig. 2, fig. 2a, 2B and 2c are divided into Diamond (Diamond) wide bandgap semiconductor, boron carbide (B)4C) Wide bandgap semiconductor and silicon carbide (SiC) wide bandgap semiconductor having a plasmon resonance frequency ω when excited by saturation of photogenerated carrierspThe dielectric loss spectrum of (D) can be seen from FIGS. 2a, 2B and 2c, which shows a wide bandgap semiconductor of excited Diamond (Diamond), boron carbide (B)4C) Plasmon resonance frequency ω of wide bandgap semiconductor and silicon carbide (SiC) wide bandgap semiconductorpAre different and are at respective plasmon resonance frequencies omegapAll have the highest dielectric absorption.
Therefore, different plasma resonance frequencies omega can be obtained by exciting different wide bandgap semiconductor materials with pump beamspAnd then the plasma resonance frequency omega is changed by adjusting the brightness of the laser beampTherefore, the wide-bandgap semiconductor material with variable models and characteristic frequency can be obtained to meet different application requirements.
As a possible example, with continued reference to fig. 1, the brightness of the pump beam a is adjustable; the wide bandgap semiconductor structure 2 is used for generating photon-generated carriers with different carrier concentrations according to the pump light beams a with different brightness, and the plasma resonance frequency of the wide bandgap semiconductor structure 2 is in a microwave frequency band or a terahertz frequency band.
Illustratively, a pump light beam A with adjustable brightness is selected to excite the wide bandgap semiconductor structure 2 to generate photon-generated carriers, the pump light beam A with adjustable brightness is adjusted to change the brightness of the wide bandgap semiconductor structure 2 to generate photon-generated carriers with different carrier concentrations n, and referring to the formula, the carrier concentration n is changed, and the plasma resonance frequency omega ispCorrespondingly, the plasma resonance frequency omega of the wide-bandgap semiconductor structure 2 is adjusted by adjusting the brightness of the laser beam ApThe terahertz wave is in a microwave frequency band or a terahertz frequency band, and can be used for detection, modulation and other applications of the microwave frequency band or the terahertz frequency band.
Meanwhile, as shown in fig. 2, the dielectric loss spectra of the wide bandgap semiconductor material in different bands vary in different ranges, so that the signal-to-noise ratio (S/N) of the device can vary from 1 dB to several tens of dB. Based on the method, a proper signal-to-noise ratio can be selected for application according to different device requirements, and the application selection of the wide-bandgap semiconductor material at the plasma resonance frequency is enriched.
In summary, compared with the conventional semiconductor, the wide bandgap semiconductor material with a wider energy gap is selected, the single photon energy of the wide bandgap semiconductor material is generally 2-4 electron volts, and the pump light source with the single photon energy greater than 4 electron volts is selected to excite the wide bandgap semiconductor, so that the wide bandgap semiconductor material with adjustable characteristic frequency is obtained, on one hand, the carrier concentration of the device can be improved, on the other hand, the influence of electron-impurity scattering can be avoided, the mobility of the device is greatly improved, and the performance of the device is optimized.
As a possible embodiment, fig. 3 is a schematic structural diagram of another wide bandgap semiconductor device provided in an embodiment of the present invention, based on the wide bandgap semiconductor device, the wide bandgap semiconductor device includes a plurality of wide bandgap semiconductor structures 2, and the plurality of wide bandgap semiconductor structures 2 are arranged in an array; the wide bandgap semiconductor device comprises a plurality of pumping light sources 1, wherein the pumping light sources 1 are arranged in an array manner, and the pumping light sources 1 correspond to the wide bandgap semiconductor structures 2 one by one.
Illustratively, based on the application of the wide bandgap semiconductor device with higher requirements, a plurality of pumping light sources 1 and a plurality of wide bandgap semiconductor structures 2 are arranged in a one-to-one corresponding array arrangement to form an array wide bandgap semiconductor device. Specifically, referring to fig. 3, 3 pumping light sources 1 and 3 wide bandgap semiconductor structures 2 are listed to be arranged in a one-to-one corresponding array to form an array wide bandgap semiconductor device, where the number and final shape of the array arrangement are not described in detail here, as long as in the arrangement where a single pumping light source 1 corresponds to a single wide bandgap semiconductor structure 2, the single pumping light source 1 excites the corresponding wide bandgap semiconductor structure 2 to generate a photo-generated carrier, and the operation principle is as described in the above embodiment.
Alternatively, with continued reference to fig. 3, the brightness of the pump light beams a emitted by the at least two pump light sources 1 is different.
Illustratively, the brightness of the pump light beams a emitted by at least two pump light sources 1 is different, so that the array wide bandgap semiconductor device has more applications. For example, the brightness of the pump beams A emitted from at least two pump light sources 1 is adjusted to be different, and the corresponding wide bandgap semiconductor structure 2 is excited to generate different plasma resonance frequencies ωpE.g. omegap1、ωp2And the like, so that the plasma resonance frequency of all the wide bandgap semiconductor structures 2 in the array wide bandgap semiconductor device is adjusted to a frequency suitable for the device, for example, the frequency of microwave, terahertz and the like can be satisfied at the same time, and the multi-frequency simultaneous application is further performed. Therefore, based on different plasma resonance frequencies of a single wide bandgap semiconductor device in the array wide bandgap semiconductor device, the method can be applied to more abundant materials and has wide application prospects.
As a possible embodiment, fig. 4 is a schematic structural diagram of a detector provided in an embodiment of the present invention, and as shown in fig. 4, a detector is prepared according to a dielectric loss spectrum of a wide bandgap semiconductor material, and can be used for signal detection in a specific frequency band. The detector comprises the wide bandgap semiconductor device provided by the embodiment and further comprises a detection structure 3; the to-be-detected beam B is incident to the wide bandgap semiconductor structure 2 at a first frequency, when the first frequency of the to-be-detected beam B is the same as the plasma resonance frequency of the wide bandgap semiconductor structure 2, the wide bandgap semiconductor structure 2 absorbs the to-be-detected beam B, and the detection structure 3 is used for detecting frequency information and energy information of the to-be-detected beam.
Illustratively, based on the embodiment, the detector is prepared by utilizing the extremely strong energy absorption behavior of the signal light at the plasma frequency of the photo-generated carrier of the wide bandgap semiconductor, and can be applied to the frequency detection of the signal light. The signal light frequency band can be microwave or terahertz frequency f0. As shown in fig. 4, the detecting structure 3 is connected to the wide bandgap semiconductor junction 2 (not shown), and detects the frequency information and the energy information of the light beam B to be detected. When the beam B to be measured is incident to the wide bandgap semiconductor structure 2 at a first frequency, the first frequency of the beam B to be measured can be a frequency f such as microwave or terahertz0Adjusting the brightness of the pumping beam A to make the photon-generated carrier plasma resonance frequency omega of the wide bandgap semiconductor structure 2pWith the first frequency f of the beam B to be detected0Similarly, the wide bandgap semiconductor structure 2 absorbs the light beam to be detected, and the detection structure detects the frequency signal of the light beam to be detected and the energy signal which changes periodically with time through a preset detection and display setting.
Optionally, the detection structure comprises a resonant cavity or a resonant circuit. Illustratively, a resonant cavity or a resonant circuit is selected to detect the energy absorption behavior of the wide bandgap semiconductor structure on the light beam to be detected, and the specific display principle is not described in detail herein.
As a possible embodiment, a modulator is prepared for frequency modulation of a signal in a specific frequency band. Fig. 5 is a schematic structural diagram of a modulator according to an embodiment of the present invention, where the modulator includes the wide bandgap semiconductor device according to the above embodiment, and further includes a signal generator 4; the signal generator 4 is used for generating a basic signal C in a microwave frequency band or a terahertz frequency band, wherein the frequency of the basic signal C is a second frequency, and the period is a first period; the period of the pump beam 1 is a second period, and the second period is different from the first period; when the base signal C is incident on the wide bandgap semiconductor structure 2, the wide bandgap semiconductor structure 2 modulates the base signal C into the mixing signal C', which includes information of the first period, information of the second period, and information of the full width at half maximum of the dielectric loss peak of the wide bandgap semiconductor structure 2.
Illustratively, based on the wide bandgap semiconductor device and the mixing modulation principle provided by the above embodiments, a modulator is prepared, which can be applied to modulation of microwave/terahertz frequency bands and the like. As shown in fig. 4, the modulator includes the wide bandgap semiconductor device provided in the above embodiment, and further includes a signal generator 4, where the signal generator 4 generates a basic signal C in a microwave frequency band or a terahertz frequency band, and the basic signal C has a second frequency f of microwave/terahertz0Adjusting the characteristic frequency of the wide bandgap semiconductor structure 2 and the fundamental signal C to have a second frequency f of microwave/terahertz0On the basis, the signal generator 4 adjusts the energy intensity of the basic signal C to be incident on the semiconductor structure 2 in a sinusoidal variation with a first period fs, and then adjusts the energy intensity of the pumping beam 1 in a sinusoidal variation with a second period fp, where the energy intensity period fs of the basic signal C is different from the energy intensity period fp of the pumping beam 1, and at this time, the wide bandgap semiconductor structure 2 has a function of a microwave/terahertz frequency band modulator to modulate the basic signal of the microwave/terahertz frequency band into a mixing signal C ', and the emitted mixing signal C' includes information of the sinusoidal variation with the first period fs, information of the sinusoidal variation with the second period, and information f of the full width at half maximum of the dielectric loss peak of the wide bandgap semiconductor structure 2FWHM. Further, the mixed signal may be further detected and analyzed, etc. using a detector to receive the mixed signal.
Based on the foregoing embodiments, fig. 6 is a flowchart of a method for manufacturing a wide bandgap semiconductor device according to an embodiment of the present invention, and the method is applied to the wide bandgap semiconductor device, the detector and the modulator according to the foregoing embodiments, and includes:
and S01, providing a pumping light source, wherein the pumping light source is used for emitting pumping light beams.
And S02, providing a wide-bandgap semiconductor structure, wherein the wide-bandgap semiconductor structure is positioned on the propagation path of the pumping beam.
And S03, adjusting the brightness of the pump beam to excite the wide-bandgap semiconductor structure to generate photon-generated carriers.
In an exemplary embodiment of the preparation method of the wide bandgap semiconductor device provided by the embodiment of the invention, a pump light source with adjustable brightness is provided to emit a pump light beam, the wide bandgap semiconductor structure is located on a propagation path of the pump light beam, the brightness of the pump light beam is adjusted to excite the wide bandgap semiconductor structure to generate photon-generated carriers, the carriers generate coherent resonance in a light field, and the wide bandgap semiconductor structure generates a plasmon resonance frequency, so that the wide bandgap semiconductor device with characteristic frequency is obtained. The embodiment of the invention obtains the technical problems that certain types of wide bandgap semiconductors cannot be prepared by adopting a doping mode and the application performance is reduced due to the defect of the wide bandgap semiconductor material caused by doping in the prior art by a method for generating a photo-generated carrier by exciting the wide bandgap semiconductor structure by laser pumping beams, provides a brand new preparation method for preparing the wide bandgap semiconductor material, obtains more and abundant wide bandgap semiconductor materials with characteristic frequency, expands the application direction of the wide bandgap semiconductor material, and provides technical support for the development and the device preparation of novel wide bandgap semiconductors.
Optionally, fig. 7 is a flowchart of a method for manufacturing a wide bandgap semiconductor device according to another embodiment of the present invention, where the method for manufacturing a wide bandgap semiconductor device according to the embodiment of the present invention includes:
and S11, providing a pumping light source, wherein the pumping light source is used for emitting pumping light beams.
And S12, providing a wide-bandgap semiconductor structure, wherein the wide-bandgap semiconductor structure is positioned on the propagation path of the pumping beam.
And S13, adjusting the brightness of the pump beam to excite the wide-bandgap semiconductor structure to generate photon-generated carriers.
S14, adjusting the brightness of the pump light beam to control the wide-bandgap semiconductor structure to generate photon-generated carriers with different carrier concentrations, wherein the plasma resonance frequency of the wide-bandgap semiconductor structure is in a microwave frequency band or a terahertz frequency band.
In an exemplary embodiment, based on the preparation method of the wide bandgap semiconductor material provided in the above embodiment, after adjusting the brightness of the pump light beam to excite the wide bandgap semiconductor structure to generate a photon-generated carrier, and enabling the photon-generated carrier of the wide bandgap semiconductor structure to generate a plasma resonance frequency, adjusting the brightness of the pump light beam to control the wide bandgap semiconductor structure to generate photon-generated carriers with different carrier concentrations, so that the plasma resonance frequency of the wide bandgap semiconductor structure is in a microwave frequency band or a terahertz frequency band, and performing microwave/terahertz frequency band signal detection by using a dielectric absorption effect of the wide bandgap semiconductor at the plasma resonance frequency; or, modulating and outputting the microwave/terahertz frequency band signal by adjusting the brightness of the pump beam. The method for preparing the wide-bandgap semiconductor material is used for further preparing a microwave/terahertz frequency band detector with adjustable characteristic frequency or a microwave/terahertz frequency band modulator for converting a microwave/terahertz signal from a single frequency to a mixing frequency, which is not described in detail herein and can refer to the above embodiments.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. Those skilled in the art will appreciate that the present invention is not limited to the specific embodiments described herein, and that the features of the various embodiments of the invention may be partially or fully coupled to each other or combined and may be capable of cooperating with each other in various ways and of being technically driven. Numerous variations, rearrangements, combinations, and substitutions will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (9)
1. A wide bandgap semiconductor device, comprising: a pump light source and a wide bandgap semiconductor structure;
the pump light source is used for emitting pump light beams;
the wide bandgap semiconductor structure is located on a propagation path of the pump beam and used for receiving the pump beam and generating photon-generated carriers based on the pump beam;
wherein photon energy of the pump beam is greater than or equal to an energy gap of the wide bandgap semiconductor structure.
2. The wide bandgap semiconductor device according to claim 1, wherein the pump beam has an adjustable brightness;
the wide-bandgap semiconductor structure is used for generating photon-generated carriers with different carrier concentrations according to the pump light beams with different brightness, and the plasma resonance frequency of the wide-bandgap semiconductor structure is in a microwave frequency band or a terahertz frequency band.
3. The wide bandgap semiconductor device according to claim 1, wherein the wide bandgap semiconductor device comprises a plurality of wide bandgap semiconductor structures arranged in an array;
the wide bandgap semiconductor device comprises a plurality of the pumping light sources, the pumping light sources are arranged in an array manner, and the pumping light sources correspond to the wide bandgap semiconductor structures one to one.
4. The wide bandgap semiconductor device of claim 3, wherein the pump light beams emitted from at least two of the pump light sources have different brightness.
5. A detector comprising the wide bandgap semiconductor device of any of claims 1-4, and further comprising a detection structure;
the detection method comprises the steps that a light beam to be detected enters the wide bandgap semiconductor structure at a first frequency, when the first frequency of the light beam to be detected is the same as the plasma resonance frequency of the wide bandgap semiconductor structure, the wide bandgap semiconductor structure absorbs the light beam to be detected, and the detection structure is used for detecting frequency information and energy information of the light beam to be detected.
6. The detector of claim 5, wherein the detection structure comprises a resonant cavity or a resonant circuit.
7. A modulator comprising the wide bandgap semiconductor device of any one of claims 1 to 4, and further comprising a signal generator;
the signal generator is used for generating a basic signal of a microwave frequency band or a terahertz frequency band, the frequency of the basic signal is a second frequency, and the period is a first period;
the period of the pump beam is a second period, and the second period is different from the first period;
when the base signal is incident on the wide bandgap semiconductor structure, the wide bandgap semiconductor structure modulates the base signal into a mixed signal, where the mixed signal includes information of the first period, information of the second period, and information of a full width at half maximum of a dielectric loss peak of the wide bandgap semiconductor structure.
8. A method for manufacturing a wide bandgap semiconductor device, which is used for manufacturing the wide bandgap semiconductor device according to any one of claims 1 to 4, comprising:
providing a pumping light source, wherein the pumping light source is used for emitting a pumping light beam;
providing a wide bandgap semiconductor structure, wherein the wide bandgap semiconductor structure is positioned on a propagation path of the pump light beam;
and adjusting the brightness of the pump beam to excite the wide-bandgap semiconductor structure to generate photon-generated carriers.
9. The method of claim 8, wherein after adjusting the brightness of the pump beam to excite the wide bandgap semiconductor structure to generate photo-generated carriers, the method further comprises:
and adjusting the brightness of the pump light beam to control the wide bandgap semiconductor structure to generate photon-generated carriers with different carrier concentrations, wherein the plasma resonance frequency of the wide bandgap semiconductor structure is in a microwave frequency band or a terahertz frequency band.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011553364.4A CN112688160A (en) | 2020-12-24 | 2020-12-24 | Wide bandgap semiconductor device and preparation method thereof, detector and modulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011553364.4A CN112688160A (en) | 2020-12-24 | 2020-12-24 | Wide bandgap semiconductor device and preparation method thereof, detector and modulator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112688160A true CN112688160A (en) | 2021-04-20 |
Family
ID=75452897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011553364.4A Pending CN112688160A (en) | 2020-12-24 | 2020-12-24 | Wide bandgap semiconductor device and preparation method thereof, detector and modulator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112688160A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7339718B1 (en) * | 2005-02-17 | 2008-03-04 | Microtech Instruments Inc | Generation of terahertz radiation in orientation-patterned semiconductors |
| CN202405298U (en) * | 2011-12-31 | 2012-08-29 | 浙江大学 | Near-infrared band full-silicon-based nano photoelectric detector |
| CN102769249A (en) * | 2012-06-02 | 2012-11-07 | 北京工业大学 | Graphene mode-locked optically pumped thin disc semiconductor laser |
| CN103197484A (en) * | 2012-01-06 | 2013-07-10 | 中国科学院物理研究所 | NLO (Non-linear Optical) device made of 4H silicon carbide crystal |
| CN103620093A (en) * | 2011-05-10 | 2014-03-05 | 六号元素有限公司 | Diamond sensors, detectors, and quantum devices |
-
2020
- 2020-12-24 CN CN202011553364.4A patent/CN112688160A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7339718B1 (en) * | 2005-02-17 | 2008-03-04 | Microtech Instruments Inc | Generation of terahertz radiation in orientation-patterned semiconductors |
| CN103620093A (en) * | 2011-05-10 | 2014-03-05 | 六号元素有限公司 | Diamond sensors, detectors, and quantum devices |
| CN202405298U (en) * | 2011-12-31 | 2012-08-29 | 浙江大学 | Near-infrared band full-silicon-based nano photoelectric detector |
| CN103197484A (en) * | 2012-01-06 | 2013-07-10 | 中国科学院物理研究所 | NLO (Non-linear Optical) device made of 4H silicon carbide crystal |
| CN102769249A (en) * | 2012-06-02 | 2012-11-07 | 北京工业大学 | Graphene mode-locked optically pumped thin disc semiconductor laser |
Non-Patent Citations (4)
| Title |
|---|
| MATTEO PERENZONI: "《太赫兹辐射物理及应用》", 30 June 2017 * |
| X ROPAGNOL: "Intense sub-terahertz radiation from wide-bandgap semiconductor based large-aperture photoconductive antennas pumped by UV lasers", 《NEW JOURNAL OF PHYSICS》 * |
| 吴勤: "《太赫兹技术发展与应用》", 31 August 2018, 中国宇航出版社 * |
| 雷清泉: "《雷清泉文集》", 31 August 2017, 冶金工业出版社 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5920078A (en) | Optoelectronic device using indirect-bandgap semiconductor material | |
| US7924413B2 (en) | Nanowire-based photonic devices | |
| US8805148B2 (en) | Generation of terahertz electromagnetic waves in graphene by coherent photon-mixing | |
| JPH02114591A (en) | Wide band gap semiconductor light emitting device | |
| US20110103801A1 (en) | Method for producing terahertz electromagnetic carrier waves | |
| US20110149368A1 (en) | Photomixer module and terahertz wave generation method thereof | |
| Leitao et al. | Gb/s visible light communications with colloidal quantum dot color converters | |
| Zhang et al. | O-band InAs/GaAs quantum-dot microcavity laser on Si (001) hollow substrate by in-situ hybrid epitaxy | |
| Jamal-Eddine et al. | Fully transparent GaN homojunction tunnel junction-enabled cascaded blue LEDs | |
| CN112688160A (en) | Wide bandgap semiconductor device and preparation method thereof, detector and modulator | |
| US7580440B2 (en) | System for emission of electromagnetic radiation, and method for making | |
| Vasil'ev et al. | Mode locking in monolithic two-section InGaN blue-violet semiconductor lasers | |
| Yanson et al. | Terahertz repetition frequencies from harmonic mode-locked monolithic compound-cavity laser diodes | |
| Kang et al. | Superior Deep-Ultraviolet Source Pumped by an Electron Beam for NLOS Communication | |
| RU2197770C2 (en) | Infrared light-emitting diodes | |
| US10490974B2 (en) | Self-referencing frequency comb based on high-order sideband generation | |
| US6448582B1 (en) | High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region | |
| Hildebrand et al. | Investigations on unsaturated optical gain spectra of GaAs-GaAlAs-DHS lasers at above-threshold conditions | |
| Tien et al. | Device saturation behavior of submillimeter-wave membrane photonic transmitters | |
| Leyman et al. | Multimodal spectral control of a quantum-dot diode laser for THz difference frequency generation | |
| EP1246263B1 (en) | Light-emitting element | |
| Leitão et al. | Luminescence Dynamics of CsPbBr 3 Quantum Dot-Based Color Converters | |
| US20240019637A1 (en) | Optical resonating device having microring resonator photodiode | |
| Li et al. | Sub-THz photonic-transmitters based on separated-transport-recombination photodiodes and a micromachined slot antenna | |
| Kamali et al. | Spectral and spatial contributions to white light generation from InGaN/GaN dot-in-a-wire nanostructures |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210420 |