CN112688157B

CN112688157B - InAs/GaSb buffer layer, silicon-based antimonide semiconductor material, preparation method thereof and component

Info

Publication number: CN112688157B
Application number: CN202011595232.8A
Authority: CN
Inventors: 杜鹏
Original assignee: Hunan Klaette Photoelectric Co ltd
Current assignee: Hunan Klaette Photoelectric Co ltd
Priority date: 2020-12-29
Filing date: 2020-12-29
Publication date: 2022-02-01
Anticipated expiration: 2040-12-29
Also published as: CN112688157A

Abstract

The application provides an InAs/GaSb buffer layer, a silicon-based antimonide semiconductor material, a preparation method thereof and a component. The InAs/GaSb buffer layer comprises one or more basic buffer units, each basic buffer unit comprises one or more basic unit layers, and each basic unit layer comprises one or more groups of alternately arranged GaSb parts and InAs parts. The silicon-based antimonide semiconductor material comprises a silicon substrate and a pure gallium-antimony layer, wherein an InAs/GaSb buffer layer is arranged between the silicon substrate and the pure gallium-antimony layer. The preparation method comprises the following steps: growing GaSb part and InAs part on a silicon substrate to obtain a plurality of basic unit layers; then a pure gallium-antimony layer is grown. The component comprises an InAs/GaSb buffer layer or a silicon-based antimonide semiconductor material as a raw material. The InAs/GaSb buffer layer provided by the application can reduce lattice mismatch between silicon and GaSb, thereby realizing high-quality antimonide epitaxial growth.

Description

InAs/GaSb buffer layer, silicon-based antimonide semiconductor material, preparation method thereof and component

Technical Field

The invention relates to the field of semiconductor materials, in particular to an InAs/GaSb buffer layer, a silicon-based antimonide semiconductor material, a preparation method thereof and a component.

Background

The silicon-based photoelectronic technology is rapidly developed under the drive of the advantages and market demands of the silicon-based photoelectronic technology, becomes the most promising technical field in the current information technology, and may bring about changes to the technical fields of photoelectrons and microelectronics. However, as an indirect bandgap semiconductor, light emission of silicon material is a typical phonon-assisted low probability process, and the light emitting efficiency is low, so that it is difficult to obtain a silicon-based active device. Therefore, the research on efficient active photoelectric devices (combined with III-V materials or other new materials) of silicon substrates is carried out, and the efficient active photoelectric devices play an important role in silicon-based photoelectronic technology. The silicon-based photoelectronic technology is developed rapidly and simultaneously, and the applied wavelength range of the silicon-based photoelectronic technology is gradually extended from the traditional communication waveband to the intermediate infrared waveband and the far infrared waveband, mainly because the wavebands are positioned in the atmospheric 'window', contain various gas absorption spectral lines, and have great application prospects in the military and civil fields of trace gas detection, photoelectric countermeasure and the like. And with the continuous increase of the device scale, the density of the photon assembly is further improved, and the method becomes a main way for realizing the requirements of improving the device performance, reducing the power consumption, reducing the cost and the like. Therefore, the realization of the epitaxial growth of the silicon-based antimonide semiconductor material with high quality in the intermediate infrared band is a necessary research direction aiming at the application field of the intermediate infrared band photoelectrons.

It is noted that the lattice mismatch of silicon and antimonide materials (e.g., GaSb) can be as much as 12%. The lattice mismatch between the substrate and the epitaxial layer causes poor material quality and more active region defects, thereby causing non-radiative recombination and limiting the improvement of the performance of the laser device. Therefore, the development and design of more reasonable silicon-based antimonide epitaxial growth method and novel buffer layer material thereof are the key points in the field.

In view of this, the present application is specifically made.

Disclosure of Invention

The invention aims to provide an InAs/GaSb buffer layer, a silicon-based antimonide semiconductor material, a preparation method thereof and a component, so as to solve the problems.

In order to achieve the above purpose, the invention adopts the following technical scheme:

an InAs/GaSb buffer layer comprising one or more stacked elementary buffer cells, each of said elementary buffer cells comprising one or more stacked elementary cell layers, each of said elementary cell layers comprising one or more sets of alternately arranged GaSb sections and InAs sections;

in at least one basic buffer unit or among a plurality of basic buffer units, the coverage rate of the GaSb part in a plurality of basic unit layers is gradually increased or gradually decreased.

It should be noted that the InAs/GaSb buffer layer needs to include at least two basic unit layers with different GaSb partial coverage rates, and the two basic unit layers may belong to the same basic buffer unit, or each of the two basic buffer units may have one layer.

Preferably, in two adjacent basic unit layers, the arrangement sequence of the GaSb parts and the InAs parts is the same or different.

Preferably, in each of the elementary buffer cells, the GaSb portions have the same or different trend of change in coverage of their corresponding elementary cell layers.

A silicon-based antimonide semiconductor material comprises a silicon substrate and a pure gallium-antimony layer, wherein an InAs/GaSb buffer layer is arranged between the silicon substrate and the pure gallium-antimony layer;

in the elementary buffer cells adjacent to the pure GaSb layer, the coverage of the GaSb part in the elementary cell layers is gradually increased along the direction gradually far away from the silicon substrate.

Preferably, a pure gallium-antimony layer is arranged on the surface of the InAs/GaSb buffer layer far away from the silicon substrate, and the coverage rate of the GaSb part in the plurality of basic unit layers is gradually increased along the direction from the silicon substrate to the pure gallium-antimony layer in the InAs/GaSb buffer layer.

Preferably, in the basic unit layer adjacent to the silicon substrate, the coverage of the GaSb part tends to 0; in the basic unit layer adjacent to the pure gallium antimony layer, the coverage of the GaSb portion tends to 100%.

Preferably, a buffer pure gallium antimony layer is arranged in one or more of the basic buffer units.

Preferably, the thickness of the InAs/GaSb buffer layer is 500-1000 nm;

preferably, the thickness of the pure gallium antimony layer is 200-500 nm.

Optionally, the thickness of the InAs/GaSb buffer layer can be any value between 500nm, 600nm, 700nm, 800nm, 900nm, 1000nm and 500-1000 nm; the thickness of the pure GaSb layer may be any value between 200nm, 300nm, 400nm, 500nm and 200-500 nm.

The preparation method of the silicon-based antimonide semiconductor material comprises the following steps:

growing the GaSb part and the InAs part on the silicon substrate according to the corresponding coverage rate to obtain a plurality of basic unit layers;

and then growing a pure gallium-antimony layer to obtain the silicon-based antimonide semiconductor material.

The component comprises the InAs/GaSb buffer layer or the silicon-based antimonide semiconductor material as raw materials.

Compared with the prior art, the invention has the beneficial effects that:

the InAs/GaSb buffer layer can reduce lattice mismatch between silicon and GaSb, and inhibit dislocation defects from vertically propagating from the substrate to the epitaxial layer, so that high-quality antimonide epitaxial growth is realized; the main functions are as follows: the lattice constant of InAs is 0.6058 nm; the lattice constant of GaSb is 0.6096 nm. The lattice constants are very close, the GaSb part and the InAs part are arranged in a direction perpendicular to the substrate according to different coverage rates, and in the structure, a large amount of strain parallel to the substrate can be generated, so that the dislocation defect of vertical propagation from the substrate to an epitaxial layer caused by lattice mismatch can be inhibited; meanwhile, the gradual change trend of the coverage rates of the GaSb part and the InAs part can realize the gradual transition from the InAs to the GaSb, and finally the epitaxial growth of the high-quality silicon-based antimonide is realized.

Drawings

To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, and it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope of the present invention.

FIG. 1 is a schematic structural diagram of a GaSb/InAs buffer layer and a silicon-based antimonide semiconductor material provided in examples 1-3;

FIG. 2 is a schematic structural diagram of a GaSb/InAs buffer layer and a silicon-based antimonide semiconductor material provided in example 4;

FIG. 3 is a schematic structural diagram of a GaSb/InAs buffer layer and a silicon-based antimonide semiconductor material provided in example 5;

FIG. 4 is a schematic structural diagram of a GaSb/InAs buffer layer and a silicon-based antimonide semiconductor material provided in example 6;

FIG. 5 is a schematic structural view of a GaSb/InAs buffer layer and a silicon-based antimonide semiconductor material provided in example 7;

FIG. 6 is a TEM photograph of the silicon-based antimonide semiconductor material obtained in example 1;

fig. 7 is a TEM photograph of the semiconductor material obtained in comparative example 1.

Reference numerals:

1-a basic buffer unit; 10-a base unit layer; a 100-GaSb moiety; 101-InAs part; 11-a buffer pure gallium antimony layer;

a 2-silicon substrate; 3-pure gallium antimony layer.

Detailed Description

The terms as used herein:

"prepared from … …" is synonymous with "comprising". The terms "comprises," "comprising," "includes," "including," "has," "having," "contains," "containing," or any other variation thereof, as used herein, are intended to cover a non-exclusive inclusion. For example, a composition, process, method, article, or apparatus that comprises a list of elements is not necessarily limited to only those elements but may include other elements not expressly listed or inherent to such composition, process, method, article, or apparatus.

The conjunction "consisting of … …" excludes any unspecified elements, steps or components. If used in a claim, the phrase is intended to claim as closed, meaning that it does not contain materials other than those described, except for the conventional impurities associated therewith. When the phrase "consisting of … …" appears in a clause of the subject matter of the claims rather than immediately after the subject matter, it defines only the elements described in the clause; other elements are not excluded from the claims as a whole.

When an amount, concentration, or other value or parameter is expressed as a range, preferred range, or as a range of upper preferable values and lower preferable values, this is to be understood as specifically disclosing all ranges formed from any pair of any upper range limit or preferred value and any lower range limit or preferred value, regardless of whether ranges are separately disclosed. For example, when the range "1 ~ 5" is disclosed, the ranges described should be construed to include the ranges "1 ~ 4", "1 ~ 3", "1 ~ 2 and 4 ~ 5", "1 ~ 3 and 5", and the like. When a range of values is described herein, unless otherwise stated, the range is intended to include the endpoints thereof and all integers and fractions within the range.

In these examples, the parts and percentages are by mass unless otherwise indicated.

"part by mass" means a basic unit of measure indicating a mass ratio of a plurality of components, and 1 part may represent any unit mass, for example, 1g or 2.689 g. If we say that the part by mass of the component A is a part by mass and the part by mass of the component B is B part by mass, the ratio of the part by mass of the component A to the part by mass of the component B is a: b. alternatively, the mass of the A component is aK and the mass of the B component is bK (K is an arbitrary number, and represents a multiple factor). It is unmistakable that, unlike the parts by mass, the sum of the parts by mass of all the components is not limited to 100 parts.

"and/or" is used to indicate that one or both of the illustrated conditions may occur, e.g., a and/or B includes (a and B) and (a or B).

Embodiments of the present invention will be described in detail below with reference to specific examples, but those skilled in the art will appreciate that the following examples are only illustrative of the present invention and should not be construed as limiting the scope of the present invention. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.

Example 1

The embodiment provides a preparation method of a GaSb/InAs buffer layer and a silicon-based antimonide semiconductor material, which comprises the following steps:

and (I) growing GaSb and InAs layers in sequence on a silicon substrate with an inclination angle of 2.86 degrees and a step length of about 6nm, and controlling the distribution of the GaSb and InAs layers on the step. The coverage ratio of the steps is 1: 1.

the growth parameters include: the substrate temperature was 400 ℃ and the III/V beam flow ratio was 1: 1.

(1) GaSb grows and controls the coverage of GaSb on the steps of the substrate with the inclination angle: firstly growing GaSb with the thickness of 1ML on a substrate, and controlling the migration time of the GaSb on the step of the substrate to be 0.5s and the migration speed to be 0.5 ML/s. Firstly, a Ga source and an Sb source are started, the coverage rate of GaSb is observed through RHEED (high energy electron diffraction), after the Ga source and the Sb source are started for 0.5s, the Ga source and the Sb source are closed, meanwhile, the residual Sb source in a reaction cavity is extracted, and the growth stop of a GaSb layer is realized. The coverage of the GaSb layer on the steps reaches 50 percent, namely 3.0 nm;

(2) InAs is grown and the coverage of InAs on the steps containing the tilted substrates is controlled, and GaSb coverage + InAs coverage is the total step length. And after the growth of GaSb is stopped, growing 1ML of InAs, and controlling the migration time of the InAs on the substrate step to be 0.5s and the migration speed to be 0.5 ML/s. Firstly, opening an In source and an As source, observing the coverage rate of InAs through RHEED (high-energy electron diffraction), closing the In source and the As source after opening for 0.5s, and simultaneously extracting the residual As source In a reaction cavity to stop the growth of an InAs layer; the coverage of the InAs layer on the step reaches 50 percent, namely 3.0 nm;

(3) repeating the process for 100 times to obtain 100 ML GaSb/InAs structures;

and secondly, continuously growing the vertically distributed InAs/GaSb-like superlattice structure on the basis of the step one. And growing GaSb and InAs layers in sequence, and controlling the distribution of the GaSb and InAs layers on the steps. The coverage ratio at the step is 3: 1.

(1) GaSb grows and controls the coverage of GaSb on the steps of the substrate with the inclination angle: GaSb with the thickness of 1ML is firstly grown on the substrate, the migration time of the GaSb on the step of the substrate is controlled to be 0.75s, and the migration speed is controlled to be 0.5 ML/s. Firstly, a Ga source and an Sb source are started, the coverage rate of GaSb is observed through RHEED (high energy electron diffraction), after the Ga source and the Sb source are started for 0.5s, the Ga source and the Sb source are closed, meanwhile, the residual Sb source in a reaction cavity is extracted, and the growth stop of a GaSb layer is realized. The coverage of the GaSb layer on the steps reaches 75 percent, namely 4.5 nm;

(2) InAs is grown and the coverage of InAs on the steps containing the tilted substrates is controlled, and GaSb coverage + InAs coverage is the total step length. And after the growth of GaSb is stopped, growing 1ML InAs, and controlling the migration time of the InAs on the substrate step to be 0.25s and the migration speed to be 0.5 ML/s. Firstly, opening an In source and an As source, observing the coverage rate of InAs through RHEED (high energy electron diffraction), closing the In source and the As source after opening for 0.25s, and simultaneously extracting the residual As source In a reaction cavity to stop the growth of an InAs layer; the coverage of the InAs layer on the step reaches 25 percent, namely 1.5 nm;

(3) repeating the process for 100 times to obtain 100 ML GaSb/InAs structures;

and thirdly, continuously growing the vertically distributed InAs/GaSb-like superlattice structure on the basis of the second step. And growing GaSb and InAs layers in sequence, and controlling the distribution of the GaSb and InAs layers on the steps. The coverage ratio at the step is 9: 1.

(1) GaSb grows and controls the coverage of GaSb on the steps of the substrate with the inclination angle: firstly growing GaSb with the thickness of 1ML on a substrate, and controlling the migration time of the GaSb on the step of the substrate to be 0.9s and the migration speed to be 0.5 ML/s. Firstly, a Ga source and an Sb source are started, the coverage rate of GaSb is observed through RHEED (high energy electron diffraction), after the Ga source and the Sb source are started for 0.9s, the Ga source and the Sb source are closed, meanwhile, the residual Sb source in a reaction cavity is extracted, and the growth stop of a GaSb layer is realized. The coverage of the GaSb layer on the steps reaches 90 percent, namely 5.4 nm;

(2) InAs is grown and the coverage of InAs on the steps containing the tilted substrates is controlled, and GaSb coverage + InAs coverage is the total step length. And after the growth of GaSb is stopped, growing 1ML thick InAs, and controlling the migration time of the InAs on the substrate step to be 0.1s and the migration speed to be 0.5 ML/s. Firstly, opening an In source and an As source, observing the coverage rate of InAs through RHEED (high-energy electron diffraction), closing the In source and the As source after opening for 0.1s, and simultaneously extracting the residual As source In a reaction cavity to stop the growth of an InAs layer; the coverage of the InAs layer on the step reaches 10 percent, namely 0.6 nm;

(3) repeating the process for 100 times to obtain 100 ML GaSb/InAs structures;

and (IV) growing a GaSb layer on the basis of the step (III) and controlling the distribution of the GaSb layer on the step. The coverage ratio at the step was 100%.

And (V) repeating the processes (one) to (four) for 10 times. Obtaining the buffer layer with the vertical distribution InAs/GaSb superlattice structure and the overall thickness of 900 nm.

Note that, in repeating (one) to (four), the silicon substrate is not used in the repeating unit.

As shown in fig. 1, the InAs/GaSb buffer layer obtained in this embodiment includes 10 basic buffer units 1 (only 2 are shown in the figure), and each basic buffer unit 1 includes 3 basic unit layers 10 and a buffer pure gallium antimony layer 11; in the 3 basic unit layers 10, the coverage ratio of the GaSb part 100 to the InAs part 101 is 1: 1. 3: 1 and 9: 1.

the embodiment also provides a silicon-based antimonide semiconductor material, which comprises a silicon substrate 2 and an InAs/GaSb buffer layer arranged on the silicon substrate 2, wherein a buffer pure gallium antimony layer 11 at the uppermost layer of the InAs/GaSb buffer layer serves as a pure gallium antimony layer of the silicon-based antimonide semiconductor material.

Example 2

and (I) growing GaSb and InAs layers in sequence on a silicon substrate with an inclination angle of 2.86 degrees and a step length of about 6nm, and controlling the distribution of the GaSb and InAs layers on the step. The coverage ratio at the step was 1: 1.

The growth parameters include: the substrate temperature was 450 ℃ and the III/V beam flow ratio was 1: 5.

(3) repeating the process for 100 times to obtain 100 ML GaSb/InAs structures;

the growth parameters include: the substrate temperature was 450 ℃ and the III/V beam flow ratio was 1:5

(3) repeating the process for 100 times to obtain 100 ML GaSb/InAs structures;

Example 3

The growth parameters include: the substrate temperature was 550 ℃ and the III/V beam flow ratio was 1: 10.

(3) repeating the process for 100 times to obtain 100 ML GaSb/InAs structures;

the growth parameters include: the substrate temperature was 550 ℃ and the III/V beam flow ratio was 1:10

(3) repeating the process for 100 times to obtain 100 ML GaSb/InAs structures;

And (V) repeating the processes (one) to (four) and circulating for 6 times. Obtaining the buffer layer with the vertical distribution InAs/GaSb superlattice structure and the overall thickness of 540 nm.

The structures of the GaSb/InAs buffer layer and the silicon-based antimonide semiconductor material obtained in the embodiment 2 and the embodiment 3 are similar to the structure of the embodiment 1, and the difference is only in the difference of the process parameters.

Example 4

As shown in fig. 2, in an alternative embodiment, the GaSb/InAs buffer layer may have a structure of:

one base unit layer 10 includes only one set of GaSb portion 100 and InAs portion 101.

Example 5

As shown in fig. 3, in an alternative embodiment, the structure of the GaSb/InAs buffer layer may be:

each elementary buffer cell 1 comprises only two elementary cell layers 10, excluding the buffer pure gallium antimony layer 11. When the silicon-based antimonide semiconductor material is prepared, the pure gallium-antimony layer 3 is arranged above the uppermost basic unit layer 10.

Example 6

As shown in fig. 4, in an alternative embodiment, the structure of the GaSb/InAs buffer layer may be:

the buffer structure comprises 2 basic buffer units 1 of different types, wherein one basic buffer unit 1 comprises 3 basic unit layers 10 and one buffer pure gallium antimony layer 11; a elementary buffer cell 1 comprises only two elementary cell layers 10, excluding the buffer pure gallium antimony layer 11.

Example 7

As shown in fig. 5, in an alternative embodiment, the structure of the GaSb/InAs buffer layer may be:

the buffer structure comprises 2 basic buffer units 1 of different types, wherein each of the 2 basic buffer units 1 does not comprise a buffer pure gallium antimony layer 11, and the coverage rate of a GaSb part 100 in each basic unit layer 10 is gradually increased from bottom to top. When the silicon-based antimonide semiconductor material is prepared, the pure gallium-antimony layer 3 is arranged above the uppermost basic unit layer 10.

In other embodiments, if the GaSb/InAs buffer layer includes a plurality of elementary buffer cells 1, the number of elementary cell layers 10 and the number of buffer pure gallium antimony layers 11 in the plurality of elementary buffer cells 1 may be the same or different; the specific change value of the ratio of the coverage of the GaSb portion 100 to the InAs portion 101 of the plurality of basic cell layers 10 may be the same or different for each basic buffer cell 1.

It should be noted that the vertical structure of the silicon-based antimonide semiconductor material provided by the present application only includes the silicon substrate, the pure gallium-antimony layer, and the basic unit layer assembly existing between the silicon substrate and the pure gallium-antimony layer, wherein the basic unit layer assembly has a tendency that the coverage rate of the GaSb part 100 gradually increases from the silicon substrate to the pure gallium-antimony layer. In the buffer layer with such a tendency, the number of the buffer pure gallium antimony layers 11 is optional, and may not be provided, or may be any plural; only a basic unit layer assembly with a pure gallium-antimony layer and a tendency of gradually increasing the coverage rate of the GaSb part 100 is required to be arranged between the silicon substrate and the pure gallium-antimony layer when the silicon-based antimonide semiconductor material is further prepared.

The preparation of examples 4 to 7 was carried out according to any one of examples 1 to 3.

Comparative example 1

In this comparative example, GaSb was grown directly only on a silicon substrate. The specific method comprises the following steps:

on the silicon substrate with tilt angle, the tilt angle is 2.86 °, and the growth parameters include: the substrate temperature was 400 ℃ and the III/V beam flow ratio was 1: 1. The Sb source is turned on first, and then the Ga source is turned on. The growth rate of GaSb was observed by RHEED (high energy electron diffraction) and was 1 ML/s. After 30 minutes, the Ga source and the Sb source were turned off in sequence. The lower image is a TEM image of GaSb grown directly on a silicon substrate.

The TEM tests were performed on the products obtained in example 1 and comparative example 1, and the TEM image of the product obtained in example 1 is shown in fig. 6, and the TEM image of the product obtained in comparative example 1 is shown in fig. 7.

As can be seen from fig. 6, the vertically distributed InAs/GaSb superlattice buffer layer grown on the surface of the silicon substrate can show that the silicon substrate has no defects at the lowest part, and the epitaxial layer, i.e., the vertically distributed InAs/GaSb superlattice, obviously has the similar-fold distribution, which is the obvious characteristic of the vertically distributed InAs/GaSb superlattice; importantly, no vertically propagating dislocation defects were seen. As can be seen from fig. 7, a large number of vertically propagating dislocation defects exist in the silicon substrate + gallium-antimony epitaxial layer structure without the vertically distributed InAs/GaSb superlattice buffer layer. The comparison of the two shows that the GaSb/InAs buffer layer provided by the application inhibits dislocation defects from vertically propagating from the substrate to the epitaxial layer, and realizes high-quality antimonide epitaxial growth.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.

Furthermore, those skilled in the art will appreciate that while some embodiments herein include some features included in other embodiments, rather than other features, combinations of features of different embodiments are meant to be within the scope of the invention and form different embodiments. For example, in the claims above, any of the claimed embodiments may be used in any combination. The information disclosed in this background section is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person skilled in the art.

Claims

1. An InAs/GaSb buffer layer, which comprises one or more stacked basic buffer units, wherein each basic buffer unit comprises one or more stacked basic unit layers, and each basic unit layer comprises one or more groups of alternately arranged GaSb parts and InAs parts;

in at least one basic buffer unit or among a plurality of basic buffer units, the coverage rate of the GaSb part in a plurality of basic unit layers is gradually increased or gradually decreased; in two adjacent basic unit layers, the arrangement sequence of the GaSb part and the InAs part is the same or different.

2. The InAs/GaSb buffer layer of claim 1, wherein the GaSb moieties have the same or different tendencies of change in coverage of their respective base cell layers within each of the base buffer cells.

3. A silicon-based antimonide semiconductor material, which is characterized by comprising a silicon substrate and a pure gallium-antimony layer, wherein the InAs/GaSb buffer layer of claim 1 or 2 is arranged between the silicon substrate and the pure gallium-antimony layer;

4. The silicon-based antimonide semiconductor material according to claim 3, wherein a pure gallium-antimony layer is disposed on a surface of the InAs/GaSb buffer layer away from the silicon substrate, and the coverage rate of the GaSb part in the plurality of basic unit layers is gradually increased along a direction from the silicon substrate to the pure gallium-antimony layer in the InAs/GaSb buffer layer.

5. The silicon-based antimonide semiconductor material according to claim 4, wherein in the basic cell layer adjacent to the silicon substrate, the coverage of GaSb portion tends to be 0; in the basic unit layer adjacent to the pure gallium antimony layer, the coverage of the GaSb portion tends to 100%.

6. The silicon-based antimonide semiconductor material according to claim 3, wherein a buffer pure gallium-antimony layer is disposed in one or more of the elementary buffer cells.

7. The silicon-based antimonide semiconductor material according to any one of claims 3 to 6, wherein the InAs/GaSb buffer layer has a thickness of 500-1000 nm.

8. The silicon-based antimonide semiconductor material as set forth in claim 7, wherein the thickness of said pure GaSb layer is 200-500 nm.

9. A method for preparing a silicon-based antimonide semiconductor material according to any one of claims 4 to 8, comprising:

10. A component, wherein the raw material comprises the InAs/GaSb buffer layer of claim 1 or 2 or the silicon-based antimonide semiconductor material of any one of claims 4 to 8.