CN112687648A - Bonding method for preventing injection molding deformation of long-span bonding lead of integrated circuit - Google Patents
Bonding method for preventing injection molding deformation of long-span bonding lead of integrated circuit Download PDFInfo
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- CN112687648A CN112687648A CN202011516205.7A CN202011516205A CN112687648A CN 112687648 A CN112687648 A CN 112687648A CN 202011516205 A CN202011516205 A CN 202011516205A CN 112687648 A CN112687648 A CN 112687648A
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000001746 injection moulding Methods 0.000 title claims abstract description 20
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 13
- 235000014820 Galium aparine Nutrition 0.000 claims abstract description 7
- 240000005702 Galium aparine Species 0.000 claims abstract description 7
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 239000010931 gold Substances 0.000 abstract description 2
- 238000012536 packaging technology Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 6
- 238000007689 inspection Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
Abstract
A bonding method for preventing injection molding deformation of a long-span bonding lead of an integrated circuit comprises the following steps: a set gold wire penetrates through the top hole of the riving knife and penetrates out of the bottom port of the riving knife; the port of the chopper drives the bonding lead to be bonded at a first bonding point A; the port of the riving knife is backwards lifted to a set height point B according to a set inclination angle; translating the port of the riving knife backwards to a set distance C point; vertically lifting the port of the riving knife to a set height D point; moving the port of the riving knife to the point E forward and upward according to the set height and distance; and moving the port of the cleaver forward and downward to a second bonding point F point to complete bonding and complete wire bonding between the first bonding point A point and the second bonding point F point. The problem of among the current plastic packaging technology, under the condition that the pin is many, the interval is little, the spun gold is thin, long-span bonding lead wire arc is out of shape by injection molding is solved. Can be popularized to products of similar long-span lead wire bonds according to the wire diameter of the gold wire.
Description
Technical Field
The invention relates to the field of semiconductor chip packaging, in particular to the field of semiconductor chip plastic package, and specifically relates to the technical field of plastic package chip lead bonding.
Background
In the semiconductor industry, in order to realize electrical connection between a chip circuit and a package lead, a bonding wire (usually a gold wire, a silicon aluminum wire or a copper wire) is required to connect an electrode output point (chip bonding point) on a chip and a corresponding lead bonding point of a package. In particular, plastic-packaged semiconductor integrated circuits are required to meet requirements of package reliability, package cost, large-scale production and automatic production, and thin gold wires are generally used as bonding wires for lead connection between electrode bonding points. When a wire is bonded from one bonding point to another, the wire must be arched (hereinafter referred to as wire arch) to a certain height and shape in order to prevent contact short-circuit with an electrical conductor between the two bonding points. The strength of the wire arc is determined by the type, the diameter and the bonding span (the distance between bonding points) of the bonding wire, the smaller the wire diameter or the larger the span, the lower the strength of the wire arc, and the more easily the wire arc deforms, especially when the wire arc is subjected to external forces such as overlapping, vibration, collision, plastic package and the like, and thus, the wire arc is collapsed, inclined and the like, thereby causing adverse risks such as collision and short circuit with other leads or conductors. Particularly, the problem of QFP plastic package to be solved by the invention relates to the problems of multiple pins, small pitch, thin gold wire (wire diameter is phi 15-phi 30 mu m), and when in plastic package, the wire arc deformation of the lead is easily generated under the influence of external forces such as plastic grease flowing, injection molding pressure and the like, and phenomena such as collapse, deflection and the like are generated, so that the bad hidden troubles such as collision and short circuit with other leads or conductors are caused. For example, in the LQFP100 type plastic package, a gold wire with the diameter of 20 μm is adopted, when the bonding distance is larger than 3mm, the bonding wire is seen through by using X-ray inspection equipment after injection molding, the bonding wire can be clearly seen to touch short circuit after being deviated and inclined, and an X-ray inspection schematic diagram among a chip 1, an orthographic projection lead 2, an orthographic projection arc deformation lead 3 and an orthographic projection lead deformation line-touching part 4 is shown in figure 1.
In view of the above, the present invention is particularly proposed.
Disclosure of Invention
The purpose of the invention is: the problem of how to prevent the injection molding deformation of the long-span bonding lead wire arc under the conditions of multiple pins, small space, thin gold wire and long span in the existing plastic packaging technology is solved.
When the lead is bonded from the first bonding point to the second bonding point, the bonding lead is continuously sent out along the port of the bonding chopper, and the forming process of the wire arc of the bonding lead is formed by the port of the bonding chopper according to the following running track. As shown in fig. 2 to 5:
A. b, C, D, E, F respectively sequentially representing the path points of the chopper ports, wherein the height of the chopper ports from A to D determines the height of the wire arc, and the larger the value of the height of the wire arc is, the larger the height of the wire arc is; the broken line height AB of the first bonding point 5 of the cleaver and the deflection angle ([ angle ] CDE) of the cleaver to the second bonding point 6 determine the included angle between the line arc and the bonding pad of the first bonding point 5, the larger the value of the included angle is, the smaller the included angle between the line arc and the bonding pad (namely the lead start angle 8 in the prior art) is, the middle span distance DE of the line arc determines the middle section structure of the line arc, and the larger the value is, the straighter the middle section of the line arc is. The parameters are mutually restricted, the span is too large, the bonding wire can directly collapse in a welding area, and the span is too small, so the bonding wire is directly broken.
Wherein:
line segment AB: represents the height of the riving knife port rising from the first bond point 5 (point a) to point B;
line segment BC: indicating the distance the chopper port has moved backwards from point B to point C;
line segment CD: indicating the height of the chopper port from the point C to the point D;
line segment DE: the distance of the port of the riving knife moving forward from the point D to the point E is represented, namely the line arc middle span distance;
line segment EF: represents the distance that the chopper port is bonded from point E to the second bond site 6 (point F);
angle ≈ CDE: indicating the angle of deflection of the riving knife at the second weld point
Wire loop height (AD): distance from the highest point of the bonding wire arc to the pin horizontal plane
The general bonding process is shown in fig. 2: after being bonded at a first bonding point 5 (point A), the cleaver vertically rises to a point B, then horizontally moves backwards to a point C, then vertically rises to a point D, then horizontally moves forwards to a point E, and finally moves forwards and downwards to a second bonding point 6 (point F) to complete bonding, so that the lead bonding between the first bonding point 5 (point A) and the second bonding point 6 (point F) is completed.
The resulting wire loop shape is shown in fig. 3: the lead starting angle 8 is more than 45 degrees, the length of the middle section 9 of the arch is less than half of the AF distance, the shape of the middle section 9 of the arch is a parabolic arch, and the height 10 of the arch is relatively high. Is in the shape of a standard arc defined by law 2011.1 in standard GJB 548. When the wire arc is a long-span wire arc, the technical problem to be solved by the invention is solved.
When the wire arc is a long-span wire arc, the stress mode of the bonding lead is analyzed, and the impact force is in direct proportion to the viscosity of the plastic package material, the injection molding speed and the included angle between the lead and the impact force. When the viscosity of the plastic package material and the injection molding speed are in reasonable intervals, the structural strength of the middle section of the bonding lead is improved by changing the shape of the wire arc, and the included angle between the impact force of the plastic package material and the lead is changed, so that the impact force of the bonding lead received in the injection molding process is reduced, the offset short circuit of the middle section of the lead is avoided, and the reliability of the product quality is improved.
To this end, the general concept of the invention is: the improvement is made from the following three aspects: (1) reducing the wire loop height by 10; (2) changing the arc structure in the middle of the line arc into a shape 12 which is approximately horizontal; (3) the angle 11 between the wire arc and the pad is reduced. The schematic diagram is shown in fig. 5.
Therefore, the invention provides a bonding method for preventing injection molding deformation of a long-span bonding lead of an integrated circuit, which comprises the following steps as shown in fig. 4:
(1) a set gold wire penetrates through the top hole of the riving knife and penetrates out of the bottom port of the riving knife;
(2) bonding the bonding wire at a first bonding point 5 (point A) by driving a cleaver port;
(3) the port of the riving knife is backwards lifted to a set height point B according to a set inclination angle;
(4) translating the port of the chopper backwards to a set distance C point, namely the angle ABC is more than 90 degrees;
(5) vertically lifting a chopper port to a set height D point, namely, the angle BCD is equal to 90 degrees;
(6) moving the port of the chopper to a point E forward and upward according to a set height and distance, namely the angle CDE is more than 90 degrees;
(7) and moving the port of the cleaver forward and downward to a second bonding point 6 (point F) to complete the bonding of the wire between the first bonding point 5 (point A) and the second bonding point 6 (point F).
According to the bonding method, the bonding wire arc shape shown in fig. 5 can be obtained.
Compared with the original arc shape, the new arc shape has the advantages that the height of the broken line is reduced, the inclination angle is reduced, the span distance of the arc exceeds the proportion of more than half of the bonding distance, and the obtained arc-shaped structure shows that the arc height is low and the middle section is straight. After injection molding, the swing amplitude of the bonding lead can be clearly seen to decrease through the inspection of an X-ray machine, and after verification of multiple batches, the situation that the lead has no offset short circuit after new line arc junctions are injected is realized.
The bonding method provided by the invention realizes the main influence factors of the long-bonding-distance wire arc composition, provides the design idea of the long-span bonding lead wire arc structure, and provides a group of design wire arc parameters. Because the forming process of the wire arc of the gold wire bonder is basically consistent, only the equipment of different manufacturers has different parameter names and windows, the bonding method can be popularized to products of similar long-span lead bonds according to the wire diameter of the gold wire.
Drawings
Fig. 1 is a schematic diagram of a prior art bond wire offset short.
FIG. 2 is a schematic diagram of a prior art bond chopper looping path.
Fig. 3 is a schematic view of a prior art bonding wire having an arcuate shape.
FIG. 4 is a schematic diagram of a wire looping path of a bonded chopper of the present invention.
Fig. 5 is a schematic view of an arcuate shape of a bonding wire in accordance with the present invention.
In the figure: 1 is a chip, 2 is an orthographic projection lead, 3 is an orthographic projection arc deformation lead, 4 is an orthographic projection lead deformation line-touching position, 5 is a first bonding point, 6 is a second bonding point, 7 is a prior art arc lead, 8 is a prior art lead initial angle, 9 is a prior art arc middle section, 10 is a prior art arc height, 11 is a lead initial angle of the invention, 12 is a lead of the invention
Detailed Description
Take LQFP100 type plastic package product as an example, a gold wire with the diameter of 20 mu m is adopted, and the bonding distance is between 3mm and 5 mm. The adopted bonding equipment is iHawk Xtreme GoCu of ASM, the height of a wire arc of a conventional bonding lead is generally set to be 150-200 mu m, the inclination angle is generally set to be 90 degrees, after the bonding distance (AF) is larger than 3mm, the problem that the wire arc of the bonding lead deviates at the middle part cannot be avoided by using the original wire arc parameter shape, and the path schematic diagram of the conventional wire arc is shown in figures 2 and 3.
According to the bonding method provided by the invention, a novel wire arc structure of the bonding lead is designed in order to avoid the deviation and the deviation of the bonding lead in the injection molding process. As shown in table 1:
TABLE 1 Long-distance bonding wire arc parameter test factor level table
Wherein:
1. fold line height (AB): the riving knife rises a first point distance from the first bond point.
2. Inclination angle (═ CDE): the riving knife is at a deflection angle to the second weld point.
3. Wire loop height (AD): the distance from the highest point of the bond wire arc to the pin level.
4. Line arc mid-span Distance (DE): the distance of horizontal movement of the riving knife at the highest point.
Through newly designing different wire arc shapes, the height (AB) of a broken line is selected to be 50 mu m, the angle of inclination angle (CDE) is selected to be 150 degrees, the percentage of the middle span (DE) of the wire arc and the original span is selected to be 85 percent, when the height of the wire arc is selected to be 100 mu m, the middle part of a bonding lead is smoother, and the included angle of the bonding lead and the impact force of a plastic package material born by the bonding lead is reduced to be 10-30 degrees from the original 45-70 degrees.
Compared with the original arc formation, the height of the broken line of the new arc shape is reduced, the inclination angle is adjusted to the limit of the equipment, the span distance of the arc exceeds half of the bonding distance, the minimum limit value of the equipment is adopted for the height of the arc, the actual arc shape structure shows that the height of the arc is low, the middle section is flat, the swing amplitude of the bonding lead can be clearly seen through the inspection of an X-ray machine after injection molding, and the situation that the lead has no offset short circuit after the new arc junction is all injected with the plastic is verified in multiple batches.
The foregoing is a further detailed description of the invention in connection with preferred embodiments and is not intended to limit the invention to the precise form disclosed. It will be understood by those skilled in the art that various changes in detail may be effected therein without departing from the scope of the invention as defined by the appended claims.
Claims (10)
1. A bonding method for preventing injection molding deformation of a long-span bonding lead of an integrated circuit is characterized by comprising the following steps:
(1) a set gold wire penetrates through the top hole of the riving knife and penetrates out of the bottom port of the riving knife;
(2) the port of the chopper drives the bonding lead to be bonded at a first bonding point A;
(3) the port of the riving knife is backwards lifted to a set height point B according to a set inclination angle;
(4) translating the port of the riving knife backwards to a set distance C point;
(5) vertically lifting the port of the riving knife to a set height D point;
(6) moving the port of the riving knife to the point E forward and upward according to the set height and distance;
(7) and moving the port of the cleaver forward and downward to a second bonding point F point to complete bonding and complete wire bonding between the first bonding point A point and the second bonding point F point.
2. The bonding method for preventing injection molding deformation of a long-span bonding wire of an integrated circuit as claimed in claim 1, wherein angle ABC is greater than 90 °.
3. The bonding method for preventing injection molding deformation of the long-span bonding wire of the integrated circuit as claimed in claim 1, wherein angle BCD is equal to 90 °.
4. The bonding method for preventing injection molding deformation of the long-span bonding wire of the integrated circuit as claimed in claim 1, characterized in that the angle CDE is more than 90 degrees, preferably 150 degrees.
5. The bonding method for preventing injection molding deformation of a long-span bonding wire of an integrated circuit according to claim 1, wherein the span distance of the wire arc exceeds more than 50% of the bonding distance, preferably 85%.
6. The bonding method for preventing injection molding deformation of the long-span bonding wire of the integrated circuit according to claim 1, wherein the wire diameter of the bonding wire is in a range from 15 μm to 30 μm, preferably 20 μm.
7. The method of claim 1, wherein the long span bond has a bond distance of 3mm to 5 mm.
8. The method of claim 1, wherein the height of the point B that rises to the set height at the set angle of inclination is 50 μm.
9. The method of claim 1, wherein the loop height is 100 μm.
10. The bonding method of claim 1, wherein the bonding equipment is iHawk Xtreme GoCu from ASM.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011516205.7A CN112687648A (en) | 2020-12-21 | 2020-12-21 | Bonding method for preventing injection molding deformation of long-span bonding lead of integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011516205.7A CN112687648A (en) | 2020-12-21 | 2020-12-21 | Bonding method for preventing injection molding deformation of long-span bonding lead of integrated circuit |
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| CN112687648A true CN112687648A (en) | 2021-04-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202011516205.7A Pending CN112687648A (en) | 2020-12-21 | 2020-12-21 | Bonding method for preventing injection molding deformation of long-span bonding lead of integrated circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116564837A (en) * | 2023-07-07 | 2023-08-08 | 赛晶亚太半导体科技(北京)有限公司 | Bonding method and bonding structure of aluminum-clad copper wire based on nickel-plated bonding pad |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050253278A1 (en) * | 2004-04-30 | 2005-11-17 | Lam Ken M | Universal interconnect die |
| US20100148369A1 (en) * | 2008-10-21 | 2010-06-17 | Kabushiki Kaisha Shinkawa | Wire bonding method and semiconductor device |
| US20170133342A1 (en) * | 2015-11-06 | 2017-05-11 | Nxp B.V. | Bond Wire Connection |
| CN110854094A (en) * | 2019-11-27 | 2020-02-28 | 中国兵器工业集团第二一四研究所苏州研发中心 | Low-arc bonding method for bonding wire of large-size chip |
| CN111668182A (en) * | 2020-07-03 | 2020-09-15 | 浙江佳博科技股份有限公司 | Bonding wire and semiconductor bonding process based on same |
-
2020
- 2020-12-21 CN CN202011516205.7A patent/CN112687648A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050253278A1 (en) * | 2004-04-30 | 2005-11-17 | Lam Ken M | Universal interconnect die |
| US20100148369A1 (en) * | 2008-10-21 | 2010-06-17 | Kabushiki Kaisha Shinkawa | Wire bonding method and semiconductor device |
| US20170133342A1 (en) * | 2015-11-06 | 2017-05-11 | Nxp B.V. | Bond Wire Connection |
| CN110854094A (en) * | 2019-11-27 | 2020-02-28 | 中国兵器工业集团第二一四研究所苏州研发中心 | Low-arc bonding method for bonding wire of large-size chip |
| CN111668182A (en) * | 2020-07-03 | 2020-09-15 | 浙江佳博科技股份有限公司 | Bonding wire and semiconductor bonding process based on same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116564837A (en) * | 2023-07-07 | 2023-08-08 | 赛晶亚太半导体科技(北京)有限公司 | Bonding method and bonding structure of aluminum-clad copper wire based on nickel-plated bonding pad |
| CN116564837B (en) * | 2023-07-07 | 2023-09-26 | 赛晶亚太半导体科技(北京)有限公司 | Bonding method and bonding structure of aluminum-clad copper wire based on nickel-plated bonding pad |
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Address after: 550018 no.238, north section of Xintian Avenue, Wudang District, Guiyang City, Guizhou Province Applicant after: Guizhou Zhenhua Fengguang Semiconductor Co.,Ltd. Address before: 550018 no.238, north section of Xintian Avenue, Wudang District, Guiyang City, Guizhou Province Applicant before: GUIZHOU ZHENHUA FENGGUANG SEMICONDUCTOR Co.,Ltd. |