CN112679764A - Au/Ni-BHT heterojunction conductive MOFs thin film material and controllable preparation method thereof - Google Patents
Au/Ni-BHT heterojunction conductive MOFs thin film material and controllable preparation method thereof Download PDFInfo
- Publication number
- CN112679764A CN112679764A CN202011420476.2A CN202011420476A CN112679764A CN 112679764 A CN112679764 A CN 112679764A CN 202011420476 A CN202011420476 A CN 202011420476A CN 112679764 A CN112679764 A CN 112679764A
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- bht
- hexa
- solution
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses an Au/Ni-BHT heterojunction conductive MOFs thin film material and a controllable preparation method thereof. The preparation method comprises the following steps: cleaning a cut silicon wafer, and then evaporating a gold electrode; then preparing a mixed aqueous solution of a hexa-mercapto benzene/chlorobenzene solution and metal salts of gold and nickel with different concentration ratios; then, placing the silicon wafer with the gold electrode on a spin coater, firstly, dropwise adding a mixed aqueous solution of metal salt, then dropwise adding a hexa-mercaptobenzene/chlorobenzene solution, ensuring that the mixed aqueous solution of the metal salt on the lower layer is completely covered, standing for 1-3 minutes, starting the spin coater to rotate the silicon wafer, and throwing away the residual solution on the surface of the silicon wafer; and finally, putting the silicon wafer into a vacuum oven for drying to obtain the Au/Ni heterojunction conductive MOFs film with a smooth surface. The film obtained by the invention has the advantages of continuous and flat surface and good conductivity, and widens the application field of the film.
Description
Technical Field
The invention belongs to the technical field of functional films, and particularly relates to an Au/Ni-BHT heterojunction conductive MOFs film material and a controllable preparation method thereof.
Background
Metal Organic Frameworks (MOFs), also called coordination polymers, are highly ordered porous crystalline materials formed by self-assembly hybridization of Organic ligands and inorganic Metal ions (or clusters) through coordination bonds, and attract extensive attention in the fields of physics, chemistry, materials, and the like. It combines the characteristics of organic and inorganic materials, and can design and synthesize an ideal framework structure and a functional material by selecting proper organic ligands and metals. In addition, the material has the characteristics of high specific surface area, adjustable pore size, easy functionalization, abundant active sites and the like, and becomes a functional material with a very prospect. Different ligands and metals are arranged and combined in different geometrical structures, so that MOFs have various structural characteristics, and the possibility of applying the materials in different fields is expanded due to the various structures.
A heterojunction, which is an interface region formed by two different semiconductors contacting each other. Semiconductor heterostructures are formed by depositing semiconductor films of different materials on the same substrate in sequence. The conditions under which the heterojunction is typically formed are: both semiconductors have similar crystal structures, close atomic spacings, and thermal expansion coefficients. Heterojunctions can be fabricated using techniques such as interfacial alloying, epitaxial growth, vacuum deposition, and the like. The heterojunction has excellent photoelectric characteristics which cannot be achieved by respective PN junctions of two semiconductors, so that the heterojunction is suitable for manufacturing ultrahigh-speed switching devices, solar cells, semiconductor lasers and the like.
In recent years, the application research of heterojunction conductive MOFs thin film materials is becoming hot day by day, and most MOFs are not conductive and lack of a method for preparing large-area thin film MOFs, so that the application of the MOFs is limited. Based on the problems, a series of novel conductive MOFs film materials prepared from mixed solutions of hexa-mercaptobenzene (BHT) and metal salts of gold and nickel with different concentration ratios are invented, and meanwhile, the film surface is continuous and flat, so that the application field of the film materials is widened.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a series of novel conductive MOFs thin film materials prepared from mixed solutions of hexa-mercaptobenzene (BHT) and metal salts of gold and nickel with different concentration ratios.
The invention is realized by the following technical scheme.
A controllable preparation method of Au/Ni-BHT heterojunction conductive MOFs thin film material is prepared by regulating Au/Ni ratio, and comprises the following specific steps:
step 1: adhering a mask plate on a cleaned silicon wafer by using a polyimide adhesive tape, putting the cleaned silicon wafer into a vacuum coating machine, evaporating a gold electrode, and removing the mask plate after evaporation is finished;
step 2: weighing 1.0-1.5 mg of hexa-mercaptobenzene, adding the hexa-mercaptobenzene into 20mL of chlorobenzene solution, and ultrasonically mixing until the hexa-mercaptobenzene is completely dissolved to obtain the chlorobenzene solution of the hexa-mercaptobenzene; ultrasonically mixing 10 mg of nickel salt, 0-1 mg of gold salt and 20ml of water until the nickel salt, the gold salt and the water are completely dissolved to prepare a mixed aqueous solution of metal salts;
and step 3: and (2) placing the silicon wafer with the gold electrode evaporated in the step (1) on a spin coater, transferring 200 mu L of mixed aqueous solution of metal salt onto the silicon wafer uniformly by using a liquid transfer gun, then transferring 200 mu L of chlorobenzene solution of hexahydrothiobenzene onto the top of the mixed aqueous solution of metal salt by using the liquid transfer gun, completely covering the silicon wafer, standing for 1-3 min to react, starting the spin coater, throwing away the unreacted solution on the surface, taking down the silicon wafer after the spin coater stops, and placing the silicon wafer into a vacuum drying box for vacuum drying to obtain the Au/Ni-BHT heterojunction conductive MOFs thin film material.
In the invention, in step 1, the silicon wafer cleaning method comprises the following steps:
firstly, cleaning a silicon wafer by using a washing agent, then sequentially carrying out ultrasonic cleaning by using deionized water, ethanol and acetone, and drying in an oven; and then, putting the dried silicon wafer into a concentrated sulfuric acid/hydrogen peroxide mixed solution with the volume ratio of 2:1, removing impurities remained on the surface, sequentially carrying out ultrasonic cleaning by using deionized water, ethanol and acetone, and finally blowing the liquid on the surface of the silicon wafer to dry by using nitrogen.
In the invention, in the step 1, the thickness of the gold electrode is 20-40 nnm.
In the invention, in the step 2, the nickel salt is nickel chloride, and the gold salt is gold chloride.
In the invention, in step 3, the working procedure of the spin coater is as follows: the rotation is carried out for 10 s at a rotation speed of 50 r/min and then for 60 s at a rotation speed of 2000 r/min.
In the invention, in the step 3, the vacuum drying temperature is 55-65 ℃, and the drying time is 8-20 min.
The invention further provides an Au/Ni-BHT heterojunction conductive MOFs thin film material prepared by the controllable preparation method. The Au/Ni-BHT heterojunction thin film obtained by the method has better conductivity and film-forming property. The area of the film can reach the centimeter level.
Compared with the prior art, the invention has the beneficial effects that: the invention can control the conductivity of the Au/Ni-BHT heterojunction conductive MOFs film material by regulating the Au/Ni ratio, and when the mass concentration of the gold salt in the mixed aqueous solution of the metal salt is increased from 0 to about 10 percent of the nickel salt, the conductivity of the prepared film is gradually enhanced.
Drawings
FIG. 1 shows the optical microscope and AFM characterization of Ni-BHT MOFs thin films prepared in example 1.
FIG. 2 is a graph showing the electrical properties of the Au/Ni-BHT MOFs thin film prepared in example 1.
FIG. 3 shows the optical microscope and AFM characterization of Au/Ni-BHT MOFs thin films prepared in example 2.
FIG. 4 is a graph showing the electrical properties of the Au/Ni-BHT MOFs thin film prepared in example 2.
FIG. 5 shows optical microscopy and AFM characterization of Au/Ni-BHTMOFs films prepared in example 3.
FIG. 6 is a graph showing the electrical properties of the Au/Ni-BHT MOFs thin film prepared in example 3.
Detailed Description
The technical scheme of the invention is explained in detail in the following by combining the drawings and the embodiment.
Example 1
A preparation method of Au/Ni-BHT heterojunction conductive MOFs thin film material comprises the following steps:
step 1: firstly, cutting a four-inch silicon wafer into squares with the size of 1.5 multiplied by 1.5 cm, then cleaning the silicon wafer by using a washing fine, then respectively carrying out ultrasonic treatment on the silicon wafer by using deionized water, ethanol and acetone for five minutes each time, and putting the silicon wafer into an oven to dry the silicon wafer. And then, putting the silicon wafer into a concentrated sulfuric acid/hydrogen peroxide mixed solution (the volume ratio is 2: 1) prepared in advance, and removing impurities remained on the surface. And taking out the cleaned silicon wafer, respectively ultrasonically cleaning the silicon wafer for five minutes by using deionized water, ethanol and acetone, and then blowing the liquid on the surface of the silicon wafer to dry by using nitrogen.
Step 2: in order to measure the conductivity of the film, a mask plate prepared in advance is firstly stuck on a cleaned silicon wafer by a polyimide adhesive tape, the silicon wafer is stuck on the template and put in a vacuum film plating machine, and a 30 nm gold electrode is evaporated according to the operation steps.
And step 3: weighing 1.1 mg of hexa-mercaptobenzene, adding the hexa-mercaptobenzene into 20mL of chlorobenzene solution, performing ultrasonic treatment until the hexa-mercaptobenzene is completely dissolved, and taking out the hexa-mercaptobenzene for later use; weighing 10 mg NiCl2Added to 20mL of deionized water without adding AuCl3I.e. the ratio Au/Ni in solution is 0: and (100) carrying out ultrasonic treatment until the solution is completely dissolved for later use.
And 4, step 4: and (3) placing the silicon wafer with the gold electrode vapor-plated in the step (2) on a spin coater, setting a low-grade area at 50 r/min for 10 s, setting a high-grade rotation speed at 2000 r/min for 60 s. After the setting is finished, 200 mu L of the mixed aqueous solution of the metal salt prepared in the step 3 is transferred by a liquid transfer gun and uniformly dripped on a silicon wafer, and then 200 mu L of the hexa-mercaptobenzene/chlorobenzene solution is transferred by the liquid transfer gun and dripped above the mixed aqueous solution of the metal salt to completely cover the silicon wafer. Standing for 2 min to react, starting a spin coater, and throwing away the unreacted solution on the surface. And after the spin coater stops rotating, taking down the silicon wafer, placing the silicon wafer in a vacuum drying oven for 10 min at 60 ℃, and then carrying out electrical property test.
And 5: and (4) placing the silicon wafer which is subjected to spin coating in the step (4) on a semiconductor tester, placing the needles of the source electrode and the drain electrode on the two gold electrodes which are close to each other respectively, setting voltage, and testing the conductivity of the silicon wafer.
FIG. 1 is an optical microscopic and AFM characterization of Ni-BHT MOFs thin films prepared in example 1, and it can be seen from the optical microscopic images that the surfaces of the thin films are smooth and have no wrinkles. While the AFM phase diagram shows a smooth surface of Ni-BHT without any impurity phase. FIG. 2 is a graph of the electrical properties of Au/Ni-BHT MOFs thin films, from which the conductivity of the Ni-BHT MOFs thin films was calculated to be 156S/cm.
Example 2
A preparation method of Au/Ni-BHT heterojunction conductive MOFs thin film material comprises the following steps:
step 1: firstly, cutting a four-inch silicon wafer into squares with the size of 1.5 multiplied by 1.5 cm, then cleaning the silicon wafer by using a washing fine, then respectively carrying out ultrasonic treatment on the silicon wafer by using deionized water, ethanol and acetone for five minutes each time, and putting the silicon wafer into an oven to dry the silicon wafer. And then, putting the silicon wafer into a concentrated sulfuric acid/hydrogen peroxide mixed solution (the volume ratio is 2: 1) prepared in advance, and removing impurities remained on the surface. And taking out the cleaned silicon wafer, respectively ultrasonically cleaning the silicon wafer for five minutes by using deionized water, ethanol and acetone, and then blowing the liquid on the surface of the silicon wafer to dry by using nitrogen.
Step 2: in order to measure the conductivity of the film, a mask plate prepared in advance is firstly stuck on a cleaned silicon wafer by a polyimide adhesive tape, the silicon wafer is stuck on the template and put in a vacuum film plating machine, and a 30 nm gold electrode is evaporated according to the operation steps.
And step 3: weighing 1.1 mg of hexa-mercaptobenzene, adding the hexa-mercaptobenzene into 20mL of chlorobenzene solution, performing ultrasonic treatment until the hexa-mercaptobenzene is completely dissolved, and taking out the hexa-mercaptobenzene for later use; weighing 10 mg NiCl2Is added to 20mL of deionized water, followed by 0.2 mgAuCl3I.e. the ratio Au/Ni in solution is 2: and (100) carrying out ultrasonic treatment until the solution is completely dissolved for later use.
And 4, step 4: and (3) placing the silicon wafer with the gold electrode vapor-plated in the step (2) on a spin coater, setting a low-grade area at 50 r/min for 10 s, setting a high-grade rotation speed at 2000 r/min for 60 s. After the setting is finished, 200 mu L of the mixed aqueous solution of the metal salt prepared in the step 3 is transferred by a liquid transfer gun and uniformly dripped on a silicon wafer, and then 200 mu L of the hexa-mercaptobenzene/chlorobenzene solution is transferred by the liquid transfer gun and dripped above the mixed aqueous solution of the metal salt to completely cover the silicon wafer. Standing for 2 min to react, starting a spin coater, and throwing away the unreacted solution on the surface. And after the spin coater stops rotating, taking down the silicon wafer, placing the silicon wafer in a vacuum drying oven for 10 min at 60 ℃, and then carrying out electrical property test.
And 5: and (4) placing the silicon wafer which is subjected to spin coating in the step (4) on a semiconductor tester, placing the needles of the source electrode and the drain electrode on the two gold electrodes which are close to each other respectively, setting voltage, and testing the conductivity of the silicon wafer.
FIG. 3 is an optical microscope and AFM characterization of the Au/Ni-BHT MOFs thin film prepared in example 2; the surface of the Au/Ni-BHT MOFs film is clean and has no wrinkles as seen from an optical microscope. And the AFM phase diagram shows that a plurality of regular particles appear on the surface of the film, which indicates that the MOFs of Au is generated and is embedded into the film of Ni-BHT, so that the MOFs film of Au/Ni-BHT is formed. FIG. 4 is a graph of the electrical properties of the Au/Ni-BHT MOFs thin film, from which the conductivity of the Au/Ni-BHT MOFs thin film was calculated to be 49S/cm.
Example 3
A preparation method of Au/Ni-BHT heterojunction conductive MOFs thin film material comprises the following steps:
step 1: firstly, cutting a four-inch silicon wafer into squares with the size of 1.5 multiplied by 1.5 cm, then cleaning the silicon wafer by using a washing fine, then respectively carrying out ultrasonic treatment on the silicon wafer by using deionized water, ethanol and acetone for five minutes each time, and putting the silicon wafer into an oven to dry the silicon wafer. And then, putting the silicon wafer into a concentrated sulfuric acid/hydrogen peroxide mixed solution (the volume ratio is 2: 1) prepared in advance, and removing impurities remained on the surface. And taking out the cleaned silicon wafer, respectively ultrasonically cleaning the silicon wafer for five minutes by using deionized water, ethanol and acetone, and then blowing the liquid on the surface of the silicon wafer to dry by using nitrogen.
Step 2: in order to measure the conductivity of the film, a mask plate prepared in advance is firstly stuck on a cleaned silicon wafer by a polyimide adhesive tape, the silicon wafer is stuck on the template and put in a vacuum film plating machine, and a 30 nm gold electrode is evaporated according to the operation steps.
And step 3: weighing 1.1 mg of hexa-mercaptobenzene, adding the hexa-mercaptobenzene into 20mL of chlorobenzene solution, performing ultrasonic treatment until the hexa-mercaptobenzene is completely dissolved, and taking out the hexa-mercaptobenzene for later use; weighing 10 mg NiCl2Added to 20mL of deionized water, followed by 1mg of AuCl3I.e. the ratio Au/Ni in the solution is 10: and (100) carrying out ultrasonic treatment until the solution is completely dissolved for later use.
And 4, step 4: and (3) placing the silicon wafer with the gold electrode vapor-plated in the step (2) on a spin coater, setting a low-grade area at 50 r/min for 10 s, setting a high-grade rotation speed at 2000 r/min for 60 s. After the setting is finished, 200 mu L of the mixed aqueous solution of the metal salt prepared in the step 3 is transferred by a liquid transfer gun and uniformly dripped on a silicon wafer, and then 200 mu L of the hexa-mercaptobenzene/chlorobenzene solution is transferred by the liquid transfer gun and dripped above the mixed aqueous solution of the metal salt to completely cover the silicon wafer. Standing for 2 min to react, starting a spin coater, and throwing away the unreacted solution on the surface. And after the spin coater stops rotating, taking down the silicon wafer, placing the silicon wafer in a vacuum drying oven for 10 min at 60 ℃, and then carrying out electrical property test.
And 5: and (4) placing the silicon wafer which is subjected to spin coating in the step (4) on a semiconductor tester, placing the needles of the source electrode and the drain electrode on the two gold electrodes which are close to each other respectively, setting voltage, and testing the conductivity of the silicon wafer.
FIG. 5 is an optical microscope and AFM characterization of the Au/Ni-BHT MOFs thin films prepared in example 3; the surface of the Au/Ni-BHT MOFs film is clean and has no wrinkles as seen from an optical microscope. The AFM phase diagram shows that more regular grains appear on the surface of the film, which means that as the Au/Ni ratio increases, more Au-BHT is embedded in the film of Ni-BHT. FIG. 6 is a graph of the electrical properties of the Au/Ni-BHT MOFs thin film, from which the conductivity of the Au/Ni-BHT MOFs thin film was calculated to be 8S/cm.
Claims (7)
1. A controllable preparation method of Au/Ni-BHT heterojunction conductive MOFs thin film material is characterized in that the preparation method is carried out by regulating Au/Ni ratio, and the specific steps are as follows:
step 1: adhering a mask plate on a cleaned silicon wafer by using a polyimide adhesive tape, putting the cleaned silicon wafer into a vacuum coating machine, evaporating a gold electrode, and removing the mask plate after evaporation is finished;
step 2: weighing 1.0-1.5 mg of hexa-mercaptobenzene, adding the hexa-mercaptobenzene into 20mL of chlorobenzene solution, and ultrasonically mixing until the hexa-mercaptobenzene is completely dissolved to obtain the chlorobenzene solution of the hexa-mercaptobenzene; ultrasonically mixing 10 mg of nickel salt, 0-1 mg of gold salt and 20ml of water until the nickel salt, the gold salt and the water are completely dissolved to prepare a mixed aqueous solution of metal salts;
and step 3: and (2) placing the silicon wafer with the gold electrode evaporated in the step (1) on a spin coater, transferring 200 mu L of mixed aqueous solution of metal salt onto the silicon wafer uniformly by using a liquid transfer gun, then transferring 200 mu L of chlorobenzene solution of hexahydrothiobenzene onto the top of the mixed aqueous solution of metal salt by using the liquid transfer gun, completely covering the silicon wafer, standing for 1-3 min to react, starting the spin coater, throwing away the unreacted solution on the surface, taking down the silicon wafer after the spin coater stops, and placing the silicon wafer into a vacuum drying box for vacuum drying to obtain the Au/Ni-BHT heterojunction conductive MOFs thin film material.
2. The controllable preparation method according to claim 1, wherein in the step 1, the silicon wafer is cleaned by the following method:
firstly, cleaning a silicon wafer by using a washing agent, then sequentially carrying out ultrasonic cleaning by using deionized water, ethanol and acetone, and drying in an oven; and then, putting the dried silicon wafer into a concentrated sulfuric acid/hydrogen peroxide mixed solution with the volume ratio of 2:1, removing impurities remained on the surface, sequentially carrying out ultrasonic cleaning by using deionized water, ethanol and acetone, and finally blowing the liquid on the surface of the silicon wafer to dry by using nitrogen.
3. The controllable preparation method according to claim 1, wherein in step 1, the thickness of the gold electrode is 20-40 nnm.
4. The controlled preparation method according to claim 1, wherein in step 2, the nickel salt is nickel chloride and the gold salt is gold chloride.
5. The controllable preparation method according to claim 1, wherein in step 3, the operation procedure of the spin coater is as follows: the rotation is carried out for 10 s at a rotation speed of 50 r/min and then for 60 s at a rotation speed of 2000 r/min.
6. The controllable preparation method according to claim 1, wherein in the step 3, the vacuum drying temperature is 55-65 ℃ and the drying time is 8-20 min.
7. An Au/Ni-BHT heterojunction conductive MOFs thin film material prepared by the controllable preparation method according to any one of claims 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011420476.2A CN112679764A (en) | 2020-12-08 | 2020-12-08 | Au/Ni-BHT heterojunction conductive MOFs thin film material and controllable preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011420476.2A CN112679764A (en) | 2020-12-08 | 2020-12-08 | Au/Ni-BHT heterojunction conductive MOFs thin film material and controllable preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112679764A true CN112679764A (en) | 2021-04-20 |
Family
ID=75446216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011420476.2A Pending CN112679764A (en) | 2020-12-08 | 2020-12-08 | Au/Ni-BHT heterojunction conductive MOFs thin film material and controllable preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112679764A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113394078A (en) * | 2021-06-16 | 2021-09-14 | 复旦大学 | Band gap adjustable MOFs electrode based on hexamercaptobenzene and preparation method thereof |
| CN115678025A (en) * | 2022-10-20 | 2023-02-03 | 复旦大学 | Preparation method of large-size and high-thickness Ni-BHT MOFs film |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9474997B1 (en) * | 2014-03-21 | 2016-10-25 | The United States Of America As Represented By The Secretary Of The Army | Metal-organic framework sorbents having hierarchical pore structure and method of making the same |
| CN109126785A (en) * | 2018-08-31 | 2019-01-04 | 电子科技大学 | A kind of preparation method of gold nano grain/Nano tube array of titanium dioxide composite heterogenous junction film |
| CN110672684A (en) * | 2019-09-11 | 2020-01-10 | 山西大学 | Electrochemical sensor for detecting nitrite with high sensitivity and preparation method and application thereof |
| CN111004402A (en) * | 2019-11-05 | 2020-04-14 | 复旦大学 | Method for preparing large-area Ni-BHT conductive thin film MOFs by interface confinement self-assembly |
| CN111004403A (en) * | 2019-11-05 | 2020-04-14 | 复旦大学 | Method for in-situ growth of large-area Cu-BHT conductive thin film MOFs on silicon oxide surface |
-
2020
- 2020-12-08 CN CN202011420476.2A patent/CN112679764A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9474997B1 (en) * | 2014-03-21 | 2016-10-25 | The United States Of America As Represented By The Secretary Of The Army | Metal-organic framework sorbents having hierarchical pore structure and method of making the same |
| CN109126785A (en) * | 2018-08-31 | 2019-01-04 | 电子科技大学 | A kind of preparation method of gold nano grain/Nano tube array of titanium dioxide composite heterogenous junction film |
| CN110672684A (en) * | 2019-09-11 | 2020-01-10 | 山西大学 | Electrochemical sensor for detecting nitrite with high sensitivity and preparation method and application thereof |
| CN111004402A (en) * | 2019-11-05 | 2020-04-14 | 复旦大学 | Method for preparing large-area Ni-BHT conductive thin film MOFs by interface confinement self-assembly |
| CN111004403A (en) * | 2019-11-05 | 2020-04-14 | 复旦大学 | Method for in-situ growth of large-area Cu-BHT conductive thin film MOFs on silicon oxide surface |
Non-Patent Citations (1)
| Title |
|---|
| RUI YAN等: "Ultrasmall Au Nanoparticles Embedded in 2D Mixed-Ligand Metal–Organic Framework Nanosheets Exhibiting Highly Efficient and Size-Selective Catalysis", 《ADVANCED FUNCTIONAL MATERIALS》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113394078A (en) * | 2021-06-16 | 2021-09-14 | 复旦大学 | Band gap adjustable MOFs electrode based on hexamercaptobenzene and preparation method thereof |
| CN115678025A (en) * | 2022-10-20 | 2023-02-03 | 复旦大学 | Preparation method of large-size and high-thickness Ni-BHT MOFs film |
| CN115678025B (en) * | 2022-10-20 | 2023-09-01 | 复旦大学 | Preparation method of large-size and high-thickness Ni-BHT MOFs film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108899420B (en) | Preparation method of perovskite thin film and perovskite solar cell device | |
| CN112679764A (en) | Au/Ni-BHT heterojunction conductive MOFs thin film material and controllable preparation method thereof | |
| CN108649121B (en) | Method for preparing perovskite film by dynamic spin coating | |
| BRPI0821501B1 (en) | METHOD FOR PREPARING A LIGHT ABSORPTION LAYER OF THE INDIVIDUAL COPY-GALLIUM-SULFUR SUMMER SOLAR CELL. | |
| CN102194925A (en) | Method of manufacturing thin-film light-absorbing layer, and method of manufacturing thin-film solar cell using the same | |
| CN112447907B (en) | Method for regulating perovskite crystallization process | |
| CN108101381A (en) | A kind of bismuthino halide perovskite nanometer sheet and preparation method thereof | |
| CN108649124B (en) | High-efficiency inorganic perovskite solar cell and preparation method thereof | |
| JP2023549305A (en) | Perovskite layer, method for producing perovskite layer, solar cell with perovskite layer, and solar cell module with perovskite layer | |
| CN109686846A (en) | A kind of modifying interface method of organic metal halide perovskite solar cell | |
| CN114242901A (en) | Perovskite thin film, preparation method and application | |
| CN106206779A (en) | Heterojunction solar battery with silicon nano column array as substrate and preparation method thereof | |
| CN104851978A (en) | Preparation method for micromolecule organic semiconductor single crystals | |
| CN110484880A (en) | The preparation method of perovskite battery with single crystalline orientation hole transmission layer | |
| CN115605063A (en) | Method for preparing high-performance perovskite film from ordered porous lead iodide and application | |
| CN115835753A (en) | Perovskite thin film and preparation method thereof, perovskite solar cell and preparation method thereof | |
| CN113502085B (en) | Lead sulfide colloid quantum dot ink, preparation method and application thereof in printable solar cell | |
| CN112002812B (en) | Method for preparing perovskite solar cell absorption layer based on step-by-step thermal evaporation and preparation of perovskite solar cell | |
| CN114824095A (en) | Preparation method of solar cell with passivated organic/inorganic hybrid perovskite thin film | |
| CN110611015B (en) | Preparation method and application of two-dimensional lead iodide sheet | |
| CN112661991A (en) | Conductive MOFs thin film material prepared from tetramercaptobenzene and preparation method thereof | |
| Zhao et al. | Sputtered ZnO films as electron transport layers for efficient planar perovskite solar cells | |
| CN114318492B (en) | Perovskite single crystal preparation method and photoelectric device | |
| CN111009615B (en) | Method for preparing high-quality perovskite layer by methyl amine chloride doping evaporation method | |
| CN115304097B (en) | Method for preparing stannic oxide crystal at ultralow temperature |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20210420 |