CN112670142A - Electrostatic chuck and semiconductor processing equipment - Google Patents
Electrostatic chuck and semiconductor processing equipment Download PDFInfo
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- CN112670142A CN112670142A CN202011547607.3A CN202011547607A CN112670142A CN 112670142 A CN112670142 A CN 112670142A CN 202011547607 A CN202011547607 A CN 202011547607A CN 112670142 A CN112670142 A CN 112670142A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 238000001179 sorption measurement Methods 0.000 claims abstract description 72
- 230000008093 supporting effect Effects 0.000 claims abstract description 60
- 230000000670 limiting effect Effects 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 14
- 230000008569 process Effects 0.000 abstract description 14
- 238000005530 etching Methods 0.000 abstract description 5
- 238000001816 cooling Methods 0.000 description 15
- 238000010521 absorption reaction Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 230000005672 electromagnetic field Effects 0.000 description 3
- 230000002452 interceptive effect Effects 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
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Abstract
The invention discloses an electrostatic chuck and semiconductor process equipment, wherein the electrostatic chuck comprises a supporting piece, a limiting piece and an electrode assembly, the supporting piece comprises a base body and a supporting platform, the supporting platform is convexly arranged on the base body, and the surface of the supporting platform, which is deviated from the base body, comprises a bearing surface for supporting a workpiece to be processed; the limiting part is provided with a through hole, the limiting part is supported on the base body, the supporting platform extends into the through hole, the surface of the limiting part, which is far away from the base body, is higher than the bearing surface, and the inner annular wall of the through hole and the bearing surface are used for jointly positioning the workpiece to be machined; the electrode assembly is arranged in the support member and is used for providing electrostatic adsorption acting force for the limiting member and the workpiece to be processed supported on the supporting table under the condition of being connected with a power supply. The electrostatic chuck can solve the problems that the etching efficiency of the edge of the wafer is low and the integral uniformity of the wafer is poor at present.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to an electrostatic chuck and semiconductor processing equipment.
Background
During the etching process of the wafer, an electrostatic chuck is usually used to apply a suction force to the wafer to fix the wafer, and the electrostatic chuck includes a chuck base body and a stopper for limiting the position of the wafer in a horizontal direction. Generally speaking, in order to ensure that the limiting part has a structural strength meeting the requirement, the thickness of the limiting part is generally large, so that the limiting part supported on the chuck base body is higher than the wafer adsorbed on the chuck base body, the distribution condition of the gas flow and the electromagnetic field in the reaction cavity at the edge of the wafer is different from the central area of the wafer, the etching efficiency at the edge of the wafer is low, and the overall uniformity of the wafer is poor.
Disclosure of Invention
The invention discloses an electrostatic chuck and semiconductor process equipment, which are used for solving the problems that the limit part in the conventional electrostatic chuck is usually higher than a wafer, so that the etching efficiency of the edge of the wafer is lower, and the integral uniformity of the wafer is poorer.
In order to solve the problems, the invention adopts the following technical scheme:
in a first aspect, an embodiment of the present invention discloses an electrostatic chuck, which includes:
the supporting piece comprises a base body and a supporting platform, the supporting platform is convexly arranged on the base body, and the surface of the supporting platform, which is far away from the base body, comprises a bearing surface for supporting a workpiece to be processed;
the limiting part is provided with a through hole, the limiting part is supported on the base body, the supporting platform extends into the through hole, the surface of the limiting part, which is far away from the base body, is higher than the bearing surface, and the inner annular wall of the through hole and the bearing surface are used for jointly positioning the workpiece to be machined;
the electrode assembly is arranged in the support piece and used for providing electrostatic adsorption acting force for the limiting piece and the workpiece to be processed supported on the supporting table under the condition of being connected with a power supply.
In a second aspect, an embodiment of the present invention discloses a semiconductor processing apparatus, which includes: the electrostatic chuck is arranged on the base, the electrode assembly is electrically connected with the direct-current power supply through the filter, and the radio-frequency power supply is connected with the base through the matcher.
The technical scheme adopted by the invention can achieve the following beneficial effects:
the embodiment of the application discloses an electrostatic chuck, it includes support piece, locating part and electrode subassembly, and wherein, support piece includes the base member and the protrusion sets up in the brace table of base member, and the surface that the brace table deviates from the base member includes the loading face, and the locating part sets up on the base member, is provided with electrode subassembly in the support piece, and electrode subassembly under the circular telegram state can make locating part and the work piece of treating processing that supports on the loading face fixed on support piece through the electrostatic absorption effort. Because the supporting table is arranged in a protruding way relative to the base body, and the limiting part is directly supported on the base body, the distance between the bearing surface and the surface of the limiting table, which is away from the base body, can be reduced, under the condition, the distance between the surface, which is away from the bearing surface, of the workpiece to be processed and is supported on the bearing surface and the distance between the surface, which is away from the base body, of the limiting part can be smaller or even zero, the surface, which is away from the base body, of the limiting part is not higher than the surface, which is away from the bearing surface, of the workpiece to be processed, so that in the process of processing the workpiece to be processed, the distribution situation of air flow and electromagnetic field in the reaction cavity at the edge of the workpiece to be processed and the distribution situation at the.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic diagram of an electrostatic chuck and a workpiece to be processed according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view of a portion of an electrostatic chuck according to an embodiment of the disclosure;
FIG. 3 is a schematic diagram of a portion of an electrostatic chuck according to an embodiment of the disclosure;
FIG. 4 is a schematic structural diagram of a first gettering layer of an electrostatic chuck according to an embodiment of the disclosure;
FIG. 5 is a schematic diagram of a first conductive layer of an electrostatic chuck according to an embodiment of the disclosure;
FIG. 6 is a schematic diagram of a second conductive layer of an electrostatic chuck according to an embodiment of the disclosure;
fig. 7 is a schematic structural diagram of semiconductor processing equipment according to an embodiment of the present invention.
Description of reference numerals:
100-supporting piece, 110-base body, 120-supporting table,
200-a stopper,
310-a first absorption layer, 311-a first avoidance hole, 320-a second absorption layer, 330-a first conductive layer, 331-a second avoidance hole, 340-a second conductive layer,
400-cooling holes,
500-a workpiece to be processed,
610-press ring, 620-base, 621-cooling channel, 630-filter, 640-elastic connector, 650-adapter.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The technical solutions disclosed in the embodiments of the present invention are described in detail below with reference to the accompanying drawings.
As shown in fig. 1 to 6, an embodiment of the present invention discloses an electrostatic chuck capable of supporting a work piece 500, which includes a support 100, a stopper 200, and an electrode assembly. Wherein the workpiece to be processed may be a wafer.
The support 100 includes a base 110 and a support table 120, and the support table 120 is protruded from the base 110, wherein the base 110 and the support table 120 may be differentiated only in function, and in an actual structure, they may be a unitary structure. Specifically, the supporting table 120 and the base 110 may be integrally formed, so as to improve the connection reliability therebetween and improve the processing efficiency of the supporting member 100. The base 110 may be a block structure such as a cylinder, which may provide a supporting function for the supporting platform 120 and the limiting member 200, and the supporting platform 120 may specifically be a cylindrical structure, so as to be more adapted to the shape of the conventional workpiece 500 to be processed, thereby improving the supporting effect of the workpiece 500 to be processed. The surface of the supporting platform 120 facing away from the base 110 includes a bearing surface for supporting the workpiece 500 to be processed, during the processing, the workpiece 500 to be processed may be supported on the bearing surface, which may be a plane, and parameters such as an area of the bearing surface may be determined according to actual conditions.
In addition, considering that the temperature of the workpiece 500 to be processed may rise during the processing process, optionally, the supporting member 100 is further provided with a cooling hole 400, and the cold source may be introduced into the cooling hole 400 through a side of the supporting member 100 away from the carrying surface, and the cold source reaches the side of the carrying surface, so as to provide a cooling effect for the workpiece 500 to be processed. The number of the cooling holes 400 is plural to improve cooling efficiency. Specifically, in the support 100, a portion of the plurality of cooling holes 400 is distributed in a first region of the base 110 where the supporting platform 120 is located, and another portion of the plurality of cooling holes 400 is distributed in a second region of the base 110 outside the supporting platform 120, where the second region can provide a supporting function for the limiting member 200, and since the temperature of the limiting member 200 is relatively high during the processing, the cooling function can be provided for the limiting member 200 through the cooling holes 400 located in the second region of the base 110 outside the supporting platform 120. The cold source may specifically be helium at a relatively low temperature.
In order to prevent the position of the workpiece 500 to be machined from changing during the machining process, the supporting member 100 is further engaged with the limiting member 200, the limiting member 200 has a through hole, so that the workpiece 500 to be machined can be exposed from the through hole, and correspondingly, the shape and the size of the through hole can be correspondingly determined according to the parameters of the workpiece 500 to be machined. The position-limiting element 200 is supported on the base 110, and the supporting platform 120 extends into the through hole, that is, the position-limiting element 200 surrounds the supporting platform 120, and both are supported on the base 110. The surface of the limiting member 200 departing from the base 110 is higher than the bearing surface, that is, in the supporting direction of the base 110, the distance between the surface of the limiting member 200 departing from the base 110 and the base 110 is greater than the distance between the bearing surface and the base 110, in this case, the limiting member 200 is convexly disposed relative to the supporting platform 120, otherwise, the supporting platform is concavely disposed in the limiting member 200, in this case, the workpiece 500 to be processed can be supported on the bearing surface and limited by the limiting member 200, thereby ensuring that the position of the workpiece 500 to be processed is not substantially changed.
In more detail, in the case that the workpiece 500 to be processed is supported on the carrying surface, the carrying surface can provide a supporting function for the workpiece 500 to be processed, so as to prevent the workpiece 500 to be processed from moving to a direction close to the substrate 110; the inner annular wall of the through hole of the limiting member 200 is disposed around the supporting member 100, so that the inner annular wall of the through hole can provide a limiting effect for the workpiece 500 to be processed, and prevent the workpiece 500 to be processed from moving in the plane of the bearing surface. In summary, the inner annular wall of the through hole and the bearing surface can position the workpiece 500 to be processed together, thereby ensuring that the workpiece 500 to be processed does not move during the processing process.
An electrode assembly is disposed within the support 100, and the electrode assembly can be connected to a power source to generate an electrostatic attraction force. Further, in the case where the electrode assembly is connected to a power source, the electrode assembly can provide an electrostatic attraction force to the stopper 200 and the workpiece 500 to be processed supported on the support stage 120. Under the action of electrostatic adsorption, the limit part 200 and the support part 100 can be ensured to form a reliable fixed relation, and further, under the limit action and the electrostatic adsorption of the limit part 200, the workpiece 500 to be processed can be ensured to form a reliable positioning relation with the support part 100. Specifically, the electrode assembly is of a unitary structure and is disposed in the base 110 of the support 100, and both the limiting member 200 and the support table 120 are allowed to interact with the electrode assembly.
The application provides an electrostatic chuck, it includes support piece 100, locating part 200 and electrode assembly, wherein, support piece 100 includes base 110 and the protruding brace table 120 who sets up in base 110, the surface that brace table 120 deviates from base 110 includes the loading face, locating part 200 sets up on base 110, be provided with the electrode assembly in the support piece 100, the electrode assembly under the circular telegram state can make locating part 200 and the work piece 500 of treating that supports on the loading face fixed on support piece 100 through the electrostatic absorption effort. Because the supporting platform 120 is convexly disposed relative to the base 110, and the limiting member 200 is directly supported on the base 110, a distance between the bearing surface and a surface of the limiting platform away from the base 110 can be reduced, in this case, a distance between a surface of the workpiece 500 to be processed, which is supported on the bearing surface, which is away from the bearing surface, and a surface of the limiting member 200, which is away from the base 110, can be smaller or even zero, and a distance between a surface of the limiting member 200, which is away from the base 110, and a surface of the workpiece 500 to be processed, which is away from the bearing surface, is not higher than a surface of the workpiece 500 to be processed, so that in a process of processing the workpiece 500 to be processed, distribution conditions of air flow and electromagnetic field in the reaction chamber at an edge of the workpiece 500 to be processed and distribution conditions at a center thereof converge.
As described above, the electrode assembly may be integrally disposed in the base 110, and in another embodiment of the present application, optionally, the electrode assembly includes the first adsorption layer 310 and the second adsorption layer 320, that is, the electrode assembly may include a plurality of sub-portions, which may be disposed at different positions of the support 100, respectively, so that the different sub-portions correspond to different structural members in the support 100, respectively, and thus the limiting member 200 and the workpiece 500 to be processed may have a better adsorption effect with the electrode assembly.
The first adsorption layer 310 is disposed in the substrate 110, and the first adsorption layer 310 is provided with a first avoiding hole 311, so that the first adsorption layer 310 directly faces the region where the position-limiting member 200 is located, that is, the first adsorption layer 310 can avoid the region where the support table 120 is located by providing the first avoiding hole 311, so that the first adsorption layer 310 only corresponds to the position-limiting member 200. The distance between the first absorption layer 310 and the surface of the substrate 110 facing the position-limiting member 200 can be determined according to actual requirements.
It should be noted that, the area where the first adsorption layer 310 directly faces the limiting member 200 means that the projection of the first adsorption layer 310 in the first direction is located within the projection of the limiting member 200 in the supporting direction, so as to ensure that the adsorption effect of the first adsorption layer 310 only acts on the limiting member 200, and optionally, the projection of the limiting member 200 in the above direction may coincide with the projection of the first adsorption layer 310, or may be larger than the projection of the first adsorption layer 310, so as to cover the projection of the first adsorption layer 310. Correspondingly, the projection of the first avoiding hole 311 in the supporting direction may coincide with the projection of the support stage 120, or may be larger than the projection of the support stage 120, so as to cover the projection of the support stage 120.
The second adsorption layer 320 is disposed in the support stage 120 and opposite to the carrying surface, so as to ensure that the electrode assembly can provide an adsorption force to the workpiece 500 to be processed supported on the carrying surface. The shape and size of the second adsorption layer 320 may be determined according to parameters of the table 120 and ensure that the second adsorption layer 320 may be installed within the table 120. Correspondingly, the distance between the second adsorption layer 320 and the carrying surface can also be determined according to actual requirements.
Further, the electrode assembly may further include a first conductive layer 330 and a second conductive layer 340, each of the first conductive layer 330 and the second conductive layer 340 may be connected to a power source, each of the first conductive layer 330 and the second conductive layer 340 may be disposed within the base 110, and the first conductive layer 330 and the second conductive layer 340 may supply power to the first adsorption layer 310 and the second adsorption layer 320, respectively.
The first conductive layer 330 is disposed opposite to the first absorption layer 310, and the first conductive layer 330 is disposed on a side of the first absorption layer 310 away from the position-limiting member 200, so that the first conductive layer 330 is connected to a power source and the first conductive layer 330 is prevented from interfering with the absorption effect of the first absorption layer 310. The first conductive layer 330 is electrically connected to the first adsorption layer 310, and particularly, may be connected by a wire, so as to ensure that the first conductive layer 330 can stably supply power to the first adsorption layer 310. The first conductive layer 330 is provided with a second avoiding hole 331 corresponding to the first adsorption layer 310, and the second avoiding hole 331 and the first avoiding hole 311 are oppositely disposed, thereby preventing the first conductive layer 330 from interfering with the normal power supply of the second adsorption layer 320.
Correspondingly, the second absorption layer 320 is correspondingly provided with a second conductive layer 340, the second conductive layer 340 is disposed in the axially extending region of the second avoiding hole 331, and the second conductive layer 340 is opposite to and electrically connected to the second absorption layer 320. That is, the second conducting layer 340 is disposed opposite to the second avoiding hole 331, and the second conducting layer 340 can supply power to the second adsorption layer 320, so as to achieve the purpose of conducting the dc voltage and the rf power between the second conducting layer 340 and the second adsorption layer 320, and improve the transmission efficiency of the rf power. In detail, the second adsorption layer 320 is ensured to be able to normally operate.
Alternatively, the first and second conductive layers 330 and 340 may be connected to the same power source, producing an effect similar to or the same as the first and second wicking layers 310 and 320 and a conductive layer of a monolithic structure, such that the voltages on the first and second conductive layers 330 and 340 are the same.
In another embodiment of the present application, as shown in fig. 7, the first conductive layer 330 and the second conductive layer 340 may be respectively connected to different power sources, for example, the first conductive layer 330 may be connected to a first power source DC1 through a first feeding structure, and the second conductive layer 340 may be connected to a second power source DC2 through a second feeding structure, so that parameters such as voltages of the first power source DC1 and the second power source DC2 may be determined according to specific conditions of the entire electrostatic chuck, and the adsorption effects generated by the first adsorption layer 310 and the second adsorption layer 320 may be distinguished from each other, so as to apply adsorption acting forces meeting requirements to the limiting component 200 and the workpiece 500 to be processed, respectively, so that the electrostatic chuck may flexibly determine the magnitudes of the electrostatic adsorption acting forces at different regions according to changes in actual conditions, thereby improving the overall performance of the electrostatic chuck. The first feeding structure and the second feeding structure may include a feeding wire and a feeding rod.
Alternatively, the first conductive layer 330 and the second conductive layer 340 are disposed flush in the thickness direction of the base 110. In the process of forming the electrostatic chuck, by adopting the technical scheme, the respective positions of the first conducting layer 330 and the second conducting layer 340 are easier to control, the difficulty in laying the first conducting layer 330 and the second conducting layer 340 can be reduced by installing the first conducting layer 330 and the second conducting layer 340 together, and the first conducting layer 330 and the second conducting layer 340 formed in the substrate 110 can be ensured to be mutually spaced and not mutually influenced. Specifically, the first conductive layer 330, the second conductive layer 340 and the substrate 110 may be integrally formed, and correspondingly, the first adsorption layer 310 and the second adsorption layer 320 may also be integrally formed in the substrate 110.
Optionally, a projection of second adsorption layer 320 coincides with second conductive layer 340 along the thickness direction of substrate 110. In this case, the second conductive layer 340 can better supply power to the second adsorption layer 320, so that the electrostatic adsorption effect at various positions on the second adsorption layer 320 is similar or the same, and the workpiece 500 to be processed supported on the bearing surface can be better fixed.
As described above, the first adsorption layer 310 is opposite to the limiting member 200, the first adsorption layer 310 is provided with the first avoidance hole 311, and the support table 120 is avoided through the first avoidance hole 311; the first conductive layer 330 is disposed opposite to the first adsorption layer 310, the first conductive layer 330 has a second avoiding hole 331, the second avoiding hole 331 is disposed opposite to the first avoiding hole 311, and the second conductive layer 340 is disposed opposite to the second avoiding hole 331.
In order to ensure that the first conductive layer 330 and the second conductive layer 340 can be spaced from each other, in the thickness direction of the substrate 110, i.e., in the supporting direction, the projection of the second conductive layer 340 may be located within the projection of the second avoiding hole 331, and a portion of the projection of the second avoiding hole 331 is located outside the second conductive layer 340, in which case, even if the first conductive layer 330 and the second conductive layer 340 are disposed flush with each other in the supporting direction, the second conductive layer 340 can be ensured to be spaced from the first conductive layer 330. Meanwhile, under the condition of adopting the technical scheme, the second adsorption layer 320 and the first conduction layer 330 can be arranged in a staggered manner, so that the radio frequency coupling between the first conduction layer 330 and the second adsorption layer 320 is prevented, and the adsorption uniformity of the second adsorption layer 320 is prevented from being influenced.
In addition, in the thickness direction of the substrate 110, the projection of the second avoidance hole 331 may be located within the projection of the first avoidance hole 311, and a part of the projection of the first avoidance hole 311 may be located outside the second avoidance hole 331. In brief, the area of the first avoiding hole 311 is larger than that of the second avoiding hole 331, and the area of the first adsorption layer 310 is smaller than that of the first conduction layer 330, so that the first adsorption layer 310 can be further avoided from supporting on the carrying surface and the workpiece 500 to be processed, which is matched with the second adsorption layer 320, to prevent the first adsorption layer 310 from generating adsorption with the workpiece 500 to be processed.
Further, the area of the first avoiding hole 311 can be determined according to the size of the workpiece 500 to be processed, so that the projection of the workpiece 500 to be processed is completely located in the first avoiding hole 311, the first adsorption layer 310 and the workpiece 500 to be processed are arranged in a staggered manner, and the effect that the first adsorption layer and the workpiece 500 to be processed are not adsorbed to each other is guaranteed.
Specifically, the workpiece 500 to be processed may be a generally circular structural member, and correspondingly, taking the first avoiding hole 311 and the second avoiding hole 331 as both circular structures as an example, optionally, the diameter of the workpiece 500 to be processed is 100mm, the diameter of the second avoiding hole 331 on the first conductive layer 330 may be 100mm, the diameter of the first avoiding hole 311 may be greater than or equal to the diameter of the second avoiding hole 331, and optionally, the diameter of the first avoiding hole 311 may be 108 mm. Further, the first conductive layer 330 may also be a circular structure, the diameter of the first conductive layer 330 may be 96mm, the size of the first adsorption layer 310 and the size of the first conductive layer 330 may be equivalent, and further, the size of the first adsorption layer 310 may also be 96 mm. Of course, the shapes of the structures may be complete circular structures, and the situation that the structures are not complete circular due to the existence of notches and the like on partial edges of the structures due to process requirements also belongs to the protection scope of the present application.
Optionally, the through-hole is a stepped hole comprising a large-diameter hole section and a small-diameter hole section, wherein the large-diameter hole section and the small-diameter hole section are in a relative concept, i.e. the diameter of the large-diameter hole section is larger than the diameter of the small-diameter hole section. Big footpath hole section and path hole section intercommunication each other, brace table 120 inserts and locates in the path hole section, and the loading end is located big footpath hole section, that is to say, a part of brace table 120 stretches into in the big footpath hole section from the path hole section to the interior rampart and the loading end that make big footpath hole section can the co-location wait to process work piece 500.
Under the condition of adopting above-mentioned technical scheme, along the direction of support, can make and wait to process work piece 500 and shelter from a supporting bench 120, also the diameter that waits to process work piece 500 is greater than a supporting bench 120's diameter promptly to prevent that plasma etc. can be from waiting to process the edge of work piece 500, cross and wait to process work piece 500 and remove to a supporting bench 120's edge, and produce the etching effect to a supporting bench 120, promote electrostatic chuck's life.
Optionally, as shown in fig. 3, in the electrostatic chuck disclosed in the embodiment of the present application, the number of the through holes on the limiting member 200 is multiple, the supporting member 100 includes a plurality of supporting tables 120, and the plurality of supporting tables 120 correspond to the plurality of through holes one to one, so that the electrostatic chuck can support a plurality of workpieces 500 to be processed together, thereby improving the processing efficiency. In addition, in order to ensure that the limiting member 200 has a structural strength satisfying the requirement, the distance d between the adjacent through holes may be greater than 6 mm.
Specifically, the outer profiles of the support 100 and the stopper 200 may each be a circular structure, thereby making the structural utilization of the electrostatic chuck higher. Further, the through holes may include a first through hole and a plurality of second through holes that surround the first through hole and are distributed in a circular shape, and the number of the second through holes may be 7. Under the condition of adopting above-mentioned technical scheme, can guarantee that locating part 200 has the structural strength who satisfies the demand, can also further promote electrostatic chuck's area utilization. Correspondingly, in order to ensure that each through hole is stable, the distance L between the through hole and the edge of the limiting member 200 needs to be greater than 10 mm.
Under the condition that the number of the through holes is multiple, the number of the first avoiding holes 311 and the number of the second avoiding holes 331 are also multiple and are in one-to-one correspondence with the multiple through holes, correspondingly, as shown in fig. 5, the number of the second conducting layers 340 can also be multiple, the multiple second conducting layers 340 can be communicated with each other through conducting wires, the width of each conducting wire can be 5mm, on one hand, the multiple conducting layers can be electrically connected, on the other hand, the multiple conducting layers can be structurally related to each other, and therefore the processing work of the electrostatic chuck can be conveniently carried out. Accordingly, the second absorption layers 320 may also be connected by wires or the like, and as shown in fig. 4 and 5, avoidance gaps may be provided on the first conductive layer 330 and the first absorption layer 310 at positions corresponding to the wires, so as to prevent the first conductive layer 330 and the first absorption layer 310 from obstructing the arrangement of the wires.
Based on the electrostatic chuck disclosed in any of the above embodiments, as shown in fig. 7, the embodiment of the present application further discloses a semiconductor processing apparatus, which includes a reaction chamber, a filter 630 matcher 650 and a radio frequency power supply RF, a base 620 is disposed in the reaction chamber, the electrostatic chuck disclosed in any of the above embodiments is disposed on the base 620, an electrode assembly is electrically connected to a dc power supply through the filter 630, and the electrode assembly can be specifically connected to the filter 630 through an elastic connector 640 such as an elastic thimble structure and a wire. The RF power source RF is connected to the base 620 through the matching unit 650, so as to ensure that no RF leakage occurs at the dc power source, the base 620 can prevent the RF power source RF from interfering with the dc power source, and the RF power source RF can couple RF power to the workpiece 500 to be processed through the base 620, the first adsorption layer 310 and the second adsorption layer 320, so as to provide RF bias voltage for the workpiece 500 to be processed.
The base 620 may further include a cooling channel 621, and the cooling channel 621 may be filled with a cooling fluid and other cooling sources to cool the base 620 and the electrostatic chuck. A sealing ring can be arranged between the base 620 and the electrostatic chuck to prevent a cold source introduced into the electrostatic chuck from leaking. One side that electrostatic chuck deviates from base 620 is provided with clamping ring 610, and clamping ring 610 specifically can press and hold on locating part 200, can make the laminating effect between locating part 200 and the base member 110 better on the one hand, promotes the cooling effect of locating part 200, and on the other hand, can also make the sealed effect between electrostatic chuck and the base 620 better, further prevents that the cold source from revealing.
In the above embodiments of the present invention, the difference between the embodiments is mainly described, and different optimization features between the embodiments can be combined to form a better embodiment as long as they are not contradictory, and further description is omitted here in view of brevity of the text.
The above description is only an example of the present invention, and is not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (10)
1. An electrostatic chuck, comprising:
the supporting piece comprises a base body and a supporting platform, the supporting platform is convexly arranged on the base body, and the surface of the supporting platform, which is far away from the base body, comprises a bearing surface for supporting a workpiece to be processed;
the limiting part is provided with a through hole, the limiting part is supported on the base body, the supporting platform extends into the through hole, the surface of the limiting part, which is far away from the base body, is higher than the bearing surface, and the inner annular wall of the through hole and the bearing surface are used for jointly positioning the workpiece to be machined;
the electrode assembly is arranged in the support piece and used for providing electrostatic adsorption acting force for the limiting piece and the workpiece to be processed supported on the supporting table under the condition of being connected with a power supply.
2. The electrostatic chuck of claim 1, wherein the electrode assembly comprises a first adsorption layer and a second adsorption layer, the first adsorption layer is disposed within the substrate, the first adsorption layer is provided with a first avoidance hole, so that the first adsorption layer is opposite to the area where the position-limiting member is located; the second adsorption layer is arranged in the support platform and is opposite to the bearing surface.
3. The electrostatic chuck of claim 2, wherein the electrode assembly further comprises a first conductive layer and a second conductive layer both connectable to the power source, the first conductive layer and the second conductive layer being disposed within the substrate, the first conductive layer being disposed opposite the first absorbing layer, the first conductive layer being disposed on a side of the first absorbing layer away from the retaining member, the first conductive layer being electrically connected to the first absorbing layer, the first conductive layer being provided with a second avoiding hole, the second avoiding hole being disposed opposite the first avoiding hole;
the second conducting layer is arranged in the axial extension area of the second avoidance hole, and the second conducting layer is opposite to the second adsorption layer and is electrically connected with the second adsorption layer.
4. The electrostatic chuck of claim 3, wherein the first conductive layer and the second conductive layer are disposed flush in a thickness direction of the substrate.
5. The electrostatic chuck of claim 3, wherein a projection of the second adsorption layer coincides with the second conductive layer in a thickness direction of the substrate.
6. The electrostatic chuck of claim 3, wherein, in a thickness direction of the substrate:
the projection of the second conducting layer is positioned in the second avoiding hole, and one part of the projection of the second avoiding hole is positioned outside the second conducting layer;
the projection of the second avoidance hole is located in the first avoidance hole, and a part of the projection of the first avoidance hole is located outside the second avoidance hole.
7. The electrostatic chuck of claim 3, wherein the first conductive layer is connected to a first power supply through a first feedthrough structure and the second conductive layer is connected to a second power supply through a second feedthrough structure.
8. The electrostatic chuck of claim 1, wherein the through hole is a stepped hole, the stepped hole includes a large-diameter hole section and a small-diameter hole section which have different diameters and are communicated with each other, the supporting platform is inserted into the small-diameter hole section, the bearing surface is located in the large-diameter hole section, and the inner annular wall of the large-diameter hole section and the bearing surface jointly position the workpiece to be machined.
9. The electrostatic chuck of claim 1, wherein the number of through holes is plural, the support member includes a plurality of support tables, the support tables correspond to the through holes one by one, and a distance between adjacent through holes is greater than 6 mm.
10. A semiconductor processing apparatus, comprising: the electrostatic chuck structure comprises a reaction chamber, a filter, a matcher and a radio frequency power supply, wherein a base is arranged in the reaction chamber, the electrostatic chuck as claimed in any one of claims 1 to 9 is arranged on the base, the electrode assembly is electrically connected with a direct current power supply through the filter, and the radio frequency power supply is connected with the base through the matcher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011547607.3A CN112670142A (en) | 2020-12-24 | 2020-12-24 | Electrostatic chuck and semiconductor processing equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011547607.3A CN112670142A (en) | 2020-12-24 | 2020-12-24 | Electrostatic chuck and semiconductor processing equipment |
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| Publication Number | Publication Date |
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| CN112670142A true CN112670142A (en) | 2021-04-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202011547607.3A Pending CN112670142A (en) | 2020-12-24 | 2020-12-24 | Electrostatic chuck and semiconductor processing equipment |
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| CN (1) | CN112670142A (en) |
Cited By (1)
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| WO2023093564A1 (en) * | 2021-11-26 | 2023-06-01 | 北京北方华创微电子装备有限公司 | Electrostatic tray and base |
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