CN112653407A - TC-SAW resonator and manufacturing method thereof - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 33
- 229910012463 LiTaO3 Inorganic materials 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000013078 crystal Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims description 70
- 239000002184 metal Substances 0.000 claims description 70
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 11
- 238000010897 surface acoustic wave method Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 description 1
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 1
- 108010023606 Zinc Finger E-box-Binding Homeobox 1 Proteins 0.000 description 1
- 102100026457 Zinc finger E-box-binding homeobox 1 Human genes 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
Abstract
The present invention relates to a TC-SAW resonator and a method for manufacturing the same, the resonator comprising: the substrate layer of the high sound velocity material and the piezoelectric material positioned on the substrate layer of the high sound velocity material are single crystal 36 degrees YX LiTaO3Or 42 ° YX LiTaO3A piezoelectric layer having a thickness λ, an electrode provided on the piezoelectric layer, and an LGS layer having a thickness of 0.2 λ covered on the piezoelectric layer, the LGS having an euler angle of (0 °,90 °,90 °). Where λ is the wavelength of the acoustic wave excited by the electrodes. The TC-SAW resonator has the characteristics of high frequency, high Q value and low TCF value, and the manufacturing process is simple in steps and high in yield.
Description
Technical Field
The present invention relates to electronic devices, and more particularly to a method of manufacturing a high frequency, high Q, low TCF temperature compensated surface acoustic wave (TC-SAW) resonator.
Background
A Surface Acoustic Wave (SAW) resonator is an electronic device that operates using a surface acoustic wave on the surface of a piezoelectric material, and converts an electrical input signal into a surface acoustic wave using an interdigital transducer (IDT), which is a periodic structure of metal electrodes and has a shape like a two-hand cross, formed on the surface of the piezoelectric material based on the piezoelectric effect of the piezoelectric material, and is a key component of the current communication equipment. Surface acoustic wave resonators are widely used in signal receiver front ends as well as duplexers and receiving devices. The device integrates low insertion loss and good inhibition performance, and can realize wider bandwidth and smaller volume. Among them, the temperature compensation type surface wave (TC-SAW) resonator is not easily affected by temperature change, and has better performance.
Center frequency f of general TC-SAW resonator0Less than or equal to 3GHz, TCF of-20 to-25 ppm/DEG C, further optimization can reach less than or equal to-20 ppm/DEG C, quality factor Q is less than or equal to 1500, FOM is less than or equal to 100, and electromechanical coupling coefficient Kt 2≤10％。
The existing TC-SAW resonator has the problems of low working frequency, low Q value, high TCF value and the like, and can not meet the requirement of 5G communication. Therefore, a high-frequency high-Q low-TCF TC-SAW resonator is needed.
Disclosure of Invention
This summary is provided to introduce a selection of concepts in a simplified form that are further described below in the detailed description. This summary is not intended to identify key features or essential features of the claimed subject matter; nor is it intended to be used as an aid in determining or limiting the scope of the claimed subject matter.
The invention utilizes the change of TCF value of LGS along with tangential and weak piezoelectric property, and adjusts LGS and LiTaO3Thickness, corner cut and electrode thickness, can obtain high-frequency high-Q value low-zero frequency temperature coefficient and no stray resonator, and has simple manufacturing process steps and high yield.
The present invention relates to a TC-SAW resonator comprising: selected from Si, SiN, Al2O3A substrate layer with a thickness of 50 lambda of at least one high sound velocity material selected from 3C-SiC, diamond, W, 4H-SiC or 6H-SiC; the piezoelectric material on the substrate layer is single crystal 36 degree YX LiTaO3Or 42 ° YX LiTaO3A piezoelectric layer of thickness λ; an electrode provided on the piezoelectric layer; an LGS layer of thickness 0.2 lambda Euler angle (0 deg., 90 deg.) is overlaid on the piezoelectric layer, where lambda is the wavelength of the acoustic wave excited by the electrodes.
The width of the electrodes and the distance between the electrodes are both 0.25 lambda, the thickness of the electrodes is 200nm, the length of the electrodes along the aperture is 10 lambda, the number of pairs of electrode fingers is 1000, and the electrodes are made of metals or alloys such as Ti, Al, Cu, Au, Pt, Ag, Pd, Ni and the like, or a laminated body of the metals or the alloys. The electrodes may or may not be embedded in the piezoelectric layer.
The invention relates to a manufacturing method of a TC-SAW resonator, which comprises the following steps: pre-treating a substrate of an LGS layer having an Euler angle of (0 DEG, 90 DEG); defining IDT metal layer gully patterns on the pretreated LGS layer substrate with the thickness of 5 μm, wherein the line width of the gully patterns is 0.25 μm; etching an IDT metal filling groove with the depth of 200 nm; depositing an IDT metal layer to fill up the gullies of the IDT metal layer and overflow; thinning the overflowing IDT metal to form an IDT metal electrode embedded into the LGS layer, wherein the thickness of the electrode is 200 nm; thinning the surface of the LGS layer, which is not embedded with the IDT metal electrode; 36 degree YX LiTaO single crystal to piezoelectric material3Or 42 ° YX LiTaO3Pre-treating the substrate of the piezoelectric layer; bonding the substrate layer and the pretreated piezoelectric layer at low temperature; and bonding the side of the piezoelectric layer not bonded to the substrate layer and the side of the LGS layer embedded with the IDT metal electrode at a low temperature.
The invention relates to a manufacturing method of a TC-SAW resonator, which comprises the following steps: 36 degree YX LiTaO single crystal to piezoelectric material3Or 42 ° YX LiTaO3Pre-treating the substrate of the piezoelectric layer; coating a positive photoresist with the thickness ranging from 1 mu m to 2 mu m on the substrate of the pretreated piezoelectric layer; exposing and developing the positive photoresist to define an IDT metal layer full-buried gully pattern with the line width of 250 nm; etching an IDT metal filling groove of the substrate, wherein the depth of the IDT metal filling groove is 200 nm; removing the photoresist; depositing an IDT metal layer to fill the totally buried gullies of the IDT metal layer and overflow, wherein the total thickness of the deposited IDT metal layer is 300-500 nm; thinning the overflowing IDT metal to form an IDT metal electrode embedded with the piezoelectric layer, wherein the thickness of the electrode is 200 nm; bonding the substrate of the LGS layer with Euler angle of (0 DEG, 90 DEG) and the surface of the piezoelectric layer embedded with the IDT metal electrode at low temperature; and bonding the surface of the piezoelectric layer, which is not embedded with the IDT metal electrode, with the substrate layer of the high-sound-velocity material at low temperature.
These and other features and advantages will become apparent upon reading the following detailed description and upon reference to the accompanying drawings. It is to be understood that both the foregoing general description and the following detailed description are explanatory only and are not restrictive of aspects as claimed.
Drawings
The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which specific embodiments of the invention are shown. The flowchart and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods and computer program products according to embodiments of the present application. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the application. Also, like reference numerals are used to refer to like parts throughout the drawings. The drawings are only schematic and are not to be construed as limiting the actual dimensional proportions.
FIG. 1 is a schematic diagram of a TC-SAW resonator with electrodes not embedded in the piezoelectric layer, according to one embodiment of the present invention;
FIG. 2 is a schematic diagram of a TC-SAW resonator with electrodes buried in the piezoelectric layer according to another embodiment of the present invention;
FIG. 3 is a schematic diagram of structural model parameters of a TC-SAW resonator according to the embodiment of FIG. 2;
FIG. 4 is a piezoelectric layer material of 36 YXLITaO according to the embodiment of FIG. 23The admittance diagram of the TC-SAW resonator of (1);
FIG. 5 is a 42 YXLITaO piezoelectric layer material according to the embodiment of FIG. 23The admittance diagram of the TC-SAW resonator of (1);
FIG. 6 is a process diagram of a TC-SAW resonator fabrication process according to the embodiment of FIG. 1;
FIG. 7 is a process diagram of a TC-SAW resonator fabrication process according to the embodiment of FIG. 2;
FIG. 8 is a graph showing the change of TCF value with Euler angle at ordinary temperature of LGS.
Detailed Description
The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which specific embodiments of the invention are shown. Various advantages and benefits of the present invention will become apparent to those of ordinary skill in the art upon reading the following detailed description of the specific embodiments. It should be understood, however, that the present invention may be embodied in various forms and should not be limited to the embodiments set forth herein. The following embodiments are provided so that the invention may be more fully understood. Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by those of skill in the art to which this application belongs.
Fig. 1 and 2 show the TC-SAW resonator of the present invention, which each include a substrate layer 101, a piezoelectric layer 102, an electrode 103, and a low acoustic velocity layer 104. The only difference is that the electrodes are not embedded (fig. 1) or embedded (fig. 2) in the piezoelectric layer. Fig. 3 is a schematic diagram of structural model parameters of the TC-SAW resonator according to the embodiment of fig. 2.
The TC-SAW resonator of the present invention is described below in conjunction with fig. 1-3.
The substrate material used for the substrate layer 101 is a high acoustic velocity material with high acoustic impedance, and can be Si, SiN, or Al2O3One of 3C-SiC, diamond, W, 4H-SiC or 6H-SiC, with a thickness of 50 λ, λ being the wavelength of the acoustic wave excited by the electrode fingers, λ being 1 μm;
the piezoelectric layer 102 is made of a single crystal 36 degree YX LiTaO3Or 42 ° YX LiTaO3The thickness of the piezoelectric layer is lambda, and the TCF is-40 ppm/DEG C;
an IDT electrode 103 is arranged on the piezoelectric layer 102, the width of the electrode and the distance between the electrodes are the same and are both 0.25 lambda, the thickness of the electrode is 200nm, the length len of the electrode along the aperture is 10 lambda, and the number of pairs of electrode fingers is 1000 pairs; the electrode is composed of a metal or alloy such as Ti, Al, Cu, Au, Pt, Ag, Pd, Ni, or a laminate of these metals or alloys, and has an electromechanical coupling coefficient kt 2＝(π2/8)(fp2-fs2)/fs2Wherein fs is the resonance frequency and fp is the antiresonance frequency;
the piezoelectric layer 102 is covered with an LGS low acoustic velocity layer 104, the acoustic velocity is 2350-2850m/s, the LGS has piezoelectric characteristics, the LGS has different frequency Temperature Coefficients (TCF) according to different tangential directions, the thickness of the LGS layer is 0.2 lambda, and the Euler angle is (0 degrees, 90 degrees and 90 degrees).
LGS with positive temperature coefficient of frequency and single crystal LiTaO with negative temperature coefficient of frequency3Superposition may reduce the TCF value of the resonator.
FIG. 4 shows the piezoelectric layer of 36 YXLiTaO according to the embodiment of FIG. 23TC-SAW harmonic ofAdmittance diagram of the resonator.
From the figure, fs is 4.193GHz, fp is 4.250GHz, f0＝4.2215GHz，k23.37% with a relative bandwidth of 1.36% and Q3173, which is seen to have a high Q value and no spurs.
Resonator integrated index FOM ═ k according to this embodiment2Q107. Generally, FOM values of SAW and TC-SAW are less than 100, FOM values of IHP SAW and FBAR are both less than 200, and resonators with FOM values greater than 200 are very rare.
The TCD (temperature coefficient of frequency, i.e., TCF value) according to this example was-3.18 ppm/° c.
FIG. 5 is a 42 YXLITaO piezoelectric layer material according to the embodiment of FIG. 23Admittance diagram of the TC-SAW resonator of (1).
From the figure, fs is 4.195GHz, fp is 4.254GHz, f0＝4.2245GHz，k23.49%, relative bandwidth 1.4%, Q3463, high Q, and no spurs.
Resonator integrated index FOM ═ k according to this embodiment2*Q＝121。
TCD according to this example-15.89 ppm/° c.
Fig. 6 is a process diagram of a manufacturing process of a TC-SAW resonator in which an electrode is not buried in a piezoelectric layer according to the embodiment of fig. 1.
In step a, a substrate of the LGS layer 4 having an euler angle of (0 °,90 °,90 °) with a substrate thickness of 5 μm is subjected to a pretreatment such as cleaning, polishing, or the like.
In step B, the substrate of the LGS layer after the pre-treatment is subjected to glue coating, exposure, and development to define a pattern of IDT metal layer ravines, wherein the line width of the pattern of IDT metal layer ravines is the IDT metal line width and is 0.25 μm. And etching the substrate IDT metal filling groove 1a by adopting a dry etching process, wherein the depth of the IDT metal filling groove 1a is 200nm of the thickness of the electrode.
In step C, removing the photoresist and depositing IDT metal layer 3 on the structure to fill up the gullies on the substrate and overflow; the metal layer can be deposited by sputtering or evaporation, and the total thickness (filling + overflowing) of the IDT metal layer 3 is about 300 to 500nm, for example, 400 nm.
In step D, thinning the overflowing metal by adopting a CMP process to ensure that the thickness of the metal electrode 3a is 200 nm; and thinning the back surface of the LGS layer embedded with the metal electrode by adopting a CMP process to ensure that the thickness of the LGS layer is 200 nm.
In step E, 36 degree YX LiTaO is applied to the single crystal3Or 42 ° YX LiTaO3Carrying out pretreatment such as cleaning and polishing on a substrate of the piezoelectric material layer 1, and then carrying out low-temperature bonding on the high-sound-velocity material substrate layer 5 and the piezoelectric layer 1;
in step F, the side of the piezoelectric layer 1 not bonded to the high acoustic velocity material substrate layer 5 is low temperature bonded to the side of the LGS layer 4 in which the metal electrode is embedded.
Fig. 7 is a process diagram of a TC-SAW resonator manufacturing process in which electrodes are buried in a piezoelectric layer according to the embodiment of fig. 2.
In step a, the substrate of the piezoelectric material layer 1 is subjected to a pretreatment such as cleaning, polishing, or the like, and the piezoelectric material may be, for example, a single crystal 36 ° YX LiTaO3Or 42 ° YX LiTaO3。
In step b, a positive photoresist 2 is coated on the substrate of the pretreated piezoelectric material layer 1, and the thickness of the positive photoresist 2 ranges from 1 μm to 2 μm, preferably 1.2 μm, which can be adjusted by those skilled in the art according to the product design requirement.
In step c, a fully buried gully pattern 2a of the IDT metal layer is defined after exposure and development of the positive photoresist 2; the width of the IDT metal layer buried-gap pattern 2a can be defined according to actual product requirements, for example, 250 nm.
In step d, the IDT metal filling groove 1a of the substrate is etched by adopting a dry etching process, wherein the depth of the IDT metal filling groove 1a is 200nm, and the IDT metal filling groove can be adjusted according to the design requirements of products.
In step e, the photoresist 2 is removed.
In step f, depositing IDT metal layer 3 on the structure to fill up the gullies on the substrate and overflow; the metal layer can be deposited by sputtering or evaporation. The total thickness (filling + overflowing) of the IDT metal layer 3 is about 300-500 nm, for example, 400nm, so that the thickness of the IDT electrode structure can be accurately controlled and adjusted according to the design requirements of the product.
In step g, the overflow metal is thinned by a CMP process to make the thickness of the IDT metal electrode 3a 200 nm.
In step h, the LGS substrate 4 having an euler angle of (0 °,90 °,90 °) is low-temperature bonded to the surface of the piezoelectric material layer 1 in which the metal electrode is embedded.
In step i, the reverse side of the piezoelectric material layer 1 embedded with the metal electrode is bonded with the substrate layer 5 of the high sound velocity material at low temperature.
FIG. 8 is a graph showing the change of TCF value with Euler angle at ordinary temperature of LGS.
The TCF value of LGS varies with euler angle (0 °,90 °, Φ) in the Y-cut direction at normal temperature (T ═ 25 ℃), and as can be seen from the graph, the TCF value of LGS varies with the crystal tangent, and varies from 38ppm/° c to-8 ppm/° c as Φ increases, and when Φ is 80 to 100, the TCF is 38ppm/° c, which is the maximum value of the positive frequency temperature coefficient; when Φ is 0 or 180, TCF-8 ppm/deg.c, the TCF value does not vary linearly with the Φ value. The Euler angle (0 degree, 90 degree and 90 degree) is selected, at the moment, the TCF is the largest, and the temperature compensation effect is the largest.
The invention adopts an LGS layer with Euler angles of (0 degree, 90 degree and 90 degree) and a single crystal of 36 degree YX LiTaO3Or 42 ° YX LiTaO3By utilizing the change of TCF value of LGS along with tangential direction and weak piezoelectric property, the piezoelectric material layer of the LGS and the LiTaO are adjusted3The thickness, the chamfer and the electrode thickness can obtain the high-frequency high-Q-value low-TCF-value TC-SAW resonator.
The TC-SAW resonator manufacturing process is simple in steps and high in yield.
The above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present disclosure, and the present disclosure should be construed as being covered by the claims and the specification.
Claims (10)
1. A TC-SAW resonator comprising:
a substrate layer of high acoustic velocity material;
the piezoelectric material on the high sound velocity material substrate layer is single crystal 36 degrees YX LiTaO3Or 42 ° YX LiTaO3The piezoelectric layer of (a), said piezoelectric layer having a thickness λ;
an electrode disposed on the piezoelectric layer;
an LGS layer overlying the piezoelectric layer, the LGS layer having a thickness of 0.2 lambda and an Euler angle of (0 DEG, 90 DEG),
where λ is the wavelength of the acoustic wave excited by the electrode.
2. The TC-SAW resonator according to claim 1, wherein the high acoustic velocity material of said substrate layer is selected from Si, SiN, Al2O33C-SiC, diamond, W, 4H-SiC or 6H-SiC, the substrate layer having a thickness of 50 lambda.
3. The TC-SAW resonator according to claim 1, wherein said electrodes are each made of Ti, Al, Cu, Au, Pt, Ag, Pd, Ni metal or alloy, or a laminate of these metals or alloys, with a width of the electrodes and a spacing between the electrodes of 0.25 λ, a thickness of the electrodes of 200nm, a length of the electrodes along an aperture of 10 λ, and a number of pairs of electrode fingers of 1000 pairs.
4. The TC-SAW resonator according to claim 1, wherein said electrode is buried in said piezoelectric layer.
5. The TC-SAW resonator according to claim 1, wherein said electrode is not buried in said piezoelectric layer.
6. A method of manufacturing a TC-SAW resonator, comprising:
pre-treating a substrate of an LGS layer having an Euler angle of (0 DEG, 90 DEG);
defining IDT metal layer gully patterns on the pretreated LGS layer substrate;
etching an IDT metal filling groove;
depositing an IDT metal layer to fill up the IDT metal layer gullies and overflow;
thinning the overflowing IDT metal to form an IDT metal electrode embedded into the LGS layer;
thinning the surface of the LGS layer, which is not embedded with the IDT metal electrode;
36 degree YX LiTaO single crystal to piezoelectric material3Or 42 ° YX LiTaO3Pre-treating the substrate of the piezoelectric layer;
bonding a substrate layer and the pretreated piezoelectric layer at low temperature; and
and bonding the side of the piezoelectric layer which is not bonded with the substrate layer and the side of the LGS layer embedded with the IDT metal electrode at low temperature.
7. The method of claim 6, wherein the LGS layer has a substrate thickness of 5 μm, the IDT metal layer groove pattern line width is 0.25 μm, the IDT metal buried groove depth is 200nm, and the electrode thickness is 200 nm.
8. A method of manufacturing a TC-SAW resonator, comprising:
36 degree YX LiTaO single crystal to piezoelectric material3Or 42 ° YX LiTaO3Pre-treating the substrate of the piezoelectric layer;
coating a positive photoresist on the pretreated substrate of the piezoelectric layer;
exposing and developing the positive photoresist to define an IDT metal layer full-buried gully pattern;
etching an IDT metal filling groove of the substrate;
removing the photoresist;
depositing an IDT metal layer to fill the totally-buried gullies of the IDT metal layer and overflow;
thinning the overflowing IDT metal to form an IDT metal electrode embedded in the piezoelectric layer;
bonding a substrate of an LGS layer with Euler angle of (0 DEG, 90 DEG and 90 DEG) and the surface of the piezoelectric layer embedded with the IDT metal electrode at low temperature; and
and bonding the surface of the piezoelectric layer, which is not embedded with the IDT metal electrode, with a substrate layer of a high-sound-velocity material at low temperature.
9. The method of claim 8, wherein the thickness of the positive photoresist 2 ranges from 1 μm to 2 μm, the line width of the IDT metal layer full-buried groove pattern is 250nm, the IDT metal buried groove depth is 200nm, and the electrode thickness is 200 nm.
10. The method of claim 8, wherein the IDT metal layer is deposited to a total thickness in a range of 300 to 500 nm.
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