CN112652701A - Anti-ferromagnetic structure and magnetic random access memory based on same - Google Patents
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 145
- 230000005290 antiferromagnetic effect Effects 0.000 title claims abstract description 133
- 229910001385 heavy metal Inorganic materials 0.000 claims abstract description 78
- 229910052697 platinum Inorganic materials 0.000 claims description 20
- 230000005294 ferromagnetic effect Effects 0.000 claims description 19
- 229910052804 chromium Inorganic materials 0.000 claims description 18
- 229910052715 tantalum Inorganic materials 0.000 claims description 18
- 239000002885 antiferromagnetic material Substances 0.000 claims description 16
- 229910052742 iron Inorganic materials 0.000 claims description 16
- 229910052741 iridium Inorganic materials 0.000 claims description 15
- 229910052748 manganese Inorganic materials 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 229910052750 molybdenum Inorganic materials 0.000 claims description 15
- 229910052758 niobium Inorganic materials 0.000 claims description 15
- 229910052763 palladium Inorganic materials 0.000 claims description 15
- 229910052721 tungsten Inorganic materials 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000003302 ferromagnetic material Substances 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910052762 osmium Inorganic materials 0.000 claims description 12
- 229910052702 rhenium Inorganic materials 0.000 claims description 12
- 229910052707 ruthenium Inorganic materials 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 9
- 229910052703 rhodium Inorganic materials 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 229910052720 vanadium Inorganic materials 0.000 claims description 9
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 7
- 229910003321 CoFe Inorganic materials 0.000 claims description 6
- 229910019236 CoFeB Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052791 calcium Inorganic materials 0.000 claims description 6
- 239000007772 electrode material Substances 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- 229910052746 lanthanum Inorganic materials 0.000 claims description 6
- 229910052745 lead Inorganic materials 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 230000005415 magnetization Effects 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 125000006850 spacer group Chemical group 0.000 claims description 6
- 229910052712 strontium Inorganic materials 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 229910052727 yttrium Inorganic materials 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- 229910052693 Europium Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 230000005293 ferrimagnetic effect Effects 0.000 claims description 4
- 235000017166 Bambusa arundinacea Nutrition 0.000 claims description 3
- 235000017491 Bambusa tulda Nutrition 0.000 claims description 3
- 241001330002 Bambuseae Species 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910019222 CoCrPt Inorganic materials 0.000 claims description 3
- 229910018936 CoPd Inorganic materials 0.000 claims description 3
- 229910018979 CoPt Inorganic materials 0.000 claims description 3
- 229910000684 Cobalt-chrome Inorganic materials 0.000 claims description 3
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 3
- 229910052691 Erbium Inorganic materials 0.000 claims description 3
- 229910015136 FeMn Inorganic materials 0.000 claims description 3
- 229910015187 FePd Inorganic materials 0.000 claims description 3
- 229910005335 FePt Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910052689 Holmium Inorganic materials 0.000 claims description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910005811 NiMnSb Inorganic materials 0.000 claims description 3
- 235000015334 Phyllostachys viridis Nutrition 0.000 claims description 3
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 3
- 229910019041 PtMn Inorganic materials 0.000 claims description 3
- 229910052772 Samarium Inorganic materials 0.000 claims description 3
- 229910004166 TaN Inorganic materials 0.000 claims description 3
- 229910052771 Terbium Inorganic materials 0.000 claims description 3
- 229910052775 Thulium Inorganic materials 0.000 claims description 3
- 239000011425 bamboo Substances 0.000 claims description 3
- 230000033228 biological regulation Effects 0.000 claims description 3
- 229910000675 bismuth manganese alloy Inorganic materials 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000002041 carbon nanotube Substances 0.000 claims description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 239000003610 charcoal Substances 0.000 claims description 3
- 239000010952 cobalt-chrome Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 239000002902 ferrimagnetic material Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 229910001291 heusler alloy Inorganic materials 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 150000002910 rare earth metals Chemical class 0.000 claims description 3
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- 229910052713 technetium Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000009471 action Effects 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract description 2
- 230000009466 transformation Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 21
- 230000005355 Hall effect Effects 0.000 description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 12
- 230000008569 process Effects 0.000 description 10
- 230000005641 tunneling Effects 0.000 description 7
- 238000012546 transfer Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000015654 memory Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 102100036285 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Human genes 0.000 description 2
- 101000875403 Homo sapiens 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Proteins 0.000 description 2
- 101100489713 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND1 gene Proteins 0.000 description 2
- 101100489717 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND2 gene Proteins 0.000 description 2
- -1 VDD2 are high level Proteins 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000013016 damping Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005302 magnetic ordering Effects 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
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Abstract
The invention discloses an antiferromagnetic structure, a magnetic random access memory based on the antiferromagnetic structure and a spin orbit torque-antiferromagnetic magnetic random access memory for erasing and writing data by using spin orbit torque. The device is characterized in that the current applied in the heavy metal buffer layer is fixed, and the mutual transformation of the magnetic sequence of the magnetic fixed layer of the magnetic structure and the anti-ferromagnetic sequence of the anti-ferromagnetic free layer between two different included angles can be realized only by changing the current applied on the non-magnetic heavy metal layer. The data writing device has the advantages of stable data writing under the action of current, simple structure, low power consumption, high speed, radiation resistance and non-volatility.
Description
Technical Field
The invention belongs to the technical field of devices with magnetic materials, and particularly relates to an antiferromagnetic structure and a magnetic random access memory based on the antiferromagnetic structure.
Background
Magnetic Random Access Memories (MRAMs) have good non-volatility, good thermal stability, and good read and write stability. The Magnetic Tunnel Junction (MTJ) can be used for data storage during operation. A magnetic tunnel junction is composed of two magnetic metals (which may be ferromagnetic, ferrimagnetic, or antiferromagnetic) and an ultra-thin insulating layer sandwiched therebetween. The orientation of the magnetic order of one magnetic metal is fixed and is called as a fixed layer; the orientation of the magnetic order of another magnetic metal can be freely rotated, called the free layer. Since the insulating layer is thin, electrons can pass through their barriers by tunneling effects. The magnetic structure of the tunnel junction is determined by the orientation of the magnetic moment of the free layer relative to the orientation of the magnetic moment of the pinned layer, with different magnetic structures having different resistances. Generally, the magnetic moment of the fixed layer is in a low resistance state when being parallel to the magnetic moment of the free layer, and the magnetic moment of the fixed layer is in an anti-parallel state when being in a high resistance state; they are called parallel magnetic structures and antiparallel magnetic structures, respectively, corresponding to "1" and "0" of the binary state, respectively. Some tunnel junctions can have more stable magnetic structures, and multi-system can be realized. MTJs can be classified into two types depending on the magnetism of the free layer. A magnetic tunnel Junction in which the free layer is made of a Ferromagnetic material is called a Ferromagnetic tunnel Junction (F-MTJ); a magnetic tunnel Junction in which the free layer is made of an Antiferromagnetic material is called an Antiferromagnetic Tunneling Junction (AF-MTJ).
MRAM can be classified into ferromagnetic-based MRAM (F-MRAM) and antiferromagnetic-based MRAM (AF-MRAM) according to the MTJ classification method. They have the common advantage of being non-volatile, i.e., data is not lost after power is turned off; the thermal stability is good, and the stored information can be stored for more than ten years; and good read-write stability. Compared with the F-MRAM which is easily influenced by external magnetic fields and stray magnetic fields, the AF-MRAM has good magnetic field stability. The operating frequency of AF-MRAM is up to THz, about three orders of magnitude higher than F-MRAM. The ultra-high operating frequency dictates that the AF-MRAM cell achieves a shorter state switching time from "1" to "0" or from "0" and "1", consuming less energy than the F-MRAM cell and state switching under similar conditions.
Spin Transfer Torque (STT) can drive the change of MTJ magnetic structures, and is suitable for perpendicular magnetic structures, i.e., magnetic structures in which the direction of current flow is perpendicular to the growth direction of MTJ. Spin transfer torque is the mainstream writing method adopted by the current MRAM; the difficulties with this approach, however, are: the spin transfer torque is weak at a small current, so that the writing speed is limited; the energy consumption is large when the current is large, and meanwhile, the risk of breaking down the barrier layer of the MTJ unit is increased. In 2012, Liu et al proposed that Spin current (Spin current) generated by Spin Hall Effect (SHE) in a three-terminal structure could be used to drive the magnetization switching of the free layer of the F-MTJ cell (Science 2012; 336: 555-. The structure of the F-MTJ memory comprises an F-MTJ unit and a non-magnetic heavy metal layer horizontally arranged below the free layer of the F-MTJ unit. When current flows through the heavy metal layer, spin current flows to the free layer of the F-MTJ unit due to the spin Hall effect, and the polarization direction of the spin current is perpendicular to the current direction and the flow direction of the spin current two by two. When the Spin current is absorbed by the free layer of the MTJ element, it generates a Torque called Spin Orbit Torque (SOT), which can flip the magnetic moment of the free layer of the F-MTJ element.
The net magnetic moment of the antiferromagnetic material is zero, and the antiferromagnetic material has the advantages of no stray magnetic field, insensitivity to magnetic field and temperature, ultrafast spin precession up to THz and the like. In contrast, ferromagnetic materials that are living free layers have stray magnetic fields and demagnetizing fields that cause them to be sensitive to magnetic fields (including parasitic fields generated by external and internal currents) and temperature. In addition, the spin precession frequency of typical ferromagnetic materials (e.g., iron, cobalt and their alloys, etc.) is on the order of GHz, which is about three orders of magnitude less than the spin precession frequency of typical antiferromagnetic materials, which results in devices based on the latter that will far outperform devices based on the former in speed. The preferred method of manipulating the antiferromagnetic material is by current, which produces spin transfer torque and spin orbit torque that can rapidly and efficiently manipulate the reversal of the antiferromagnetic order. In addition, the Neel spin-orbit torque (NSOT) can also manipulate the inversion of the anti-ferriordering. Wadley et al, 2016, reported that as little as 4106 Acm-2 current produced Nael spin orbital torque could modulate the cyclic switching of tetragonal CuMnAs between two stable antiferromagnetic states. Bodnar et al, 2018, reported that a current of about 107Acm-2 manipulated the reversal of the antiferromagnetic order of tetragonal Mn2 Au.
The AF-MTJ cell can be written by both spin orbit torque and neel spin orbit torque methods. In the three-terminal structure, the writing current does not flow through the MTJ unit, so that the breakdown risk of the AF-MTJ barrier layer caused by the writing current is avoided. For the nell spin orbit torque method, it is implemented by applying a direct or alternating current in the easy magnetization plane of the tetragonal antiferromagnetic material in a direction perpendicular to the antiferromagnetic order, and the nell spin orbit torque generated when the current exceeds the critical current makes the antiferromagnetic order rotate by 90 degrees, thereby implementing the transition from state 1 to state 2. The transition from state 2 to state 1 requires the application of another current in the easy magnetization plane and perpendicular to the antiferromagnetic order of the antiferromagnetic free layer in state 2 that is nearly perpendicular to the current applied during the transition from state 1 to state 2. For a tetragonal antiferromagnetic material, two independent currents are needed to realize complete state circulation by adopting the nell spin orbit torque method, and the complicated implementation method can seriously affect the integration and implementation efficiency of the device.
Disclosure of Invention
The present invention is directed to an antiferromagnetic structure and a magnetic random access memory based on the antiferromagnetic structure, so as to solve the above problems.
In order to achieve the purpose, the invention adopts the following technical scheme:
an antiferromagnetic structure comprising a magnetic pinned layer, a buffer layer, an insulating layer, a heavy metal buffer layer, an antiferromagnetic free layer and a non-magnetic heavy metal layer; the magnetic fixing layer, the buffer layer, the insulating layer, the heavy metal buffer layer, the antiferromagnetic free layer and the nonmagnetic heavy metal laminated layer are arranged, wherein the buffer layer is positioned between the magnetic fixing layer and the insulating layer, the heavy metal buffer layer is positioned between the insulating layer and the antiferromagnetic free layer, and the nonmagnetic heavy metal layer is horizontally arranged below the antiferromagnetic free layer; the spin orbit torque generated by the current transversely flowing through the nonmagnetic heavy metal layer and the heavy metal buffer layer is used for regulating the antiferromagnetic order of the antiferromagnetic free layer.
Further, the magnetic sequence of the magnetic fixed layer and the antiferromagnetic free layer is parallel to the surface of the antiferromagnetic free layer film; the transverse linearity of the magnetic tunnel junction is 1 nm-50 nm, and different layers have different shapes and linearities; the magnetic sequence of the current regulation antiferromagnetic free layer and the magnetic sequence of the magnetic fixed layer are in a state of being parallel, antiparallel or different included angles.
Further, the antiferromagnetic free layer material is tetragonal Mn2Au or CuMnAs with the thickness of 0.2 nm-5 nm.
Further, the magnetic pinned layer is made of ferromagnetic or ferrimagnetic or antiferromagnetic metals and alloys thereof, including Fe, Co, Ni, Mn, NiFe, FePd, FePt, CoFe, CoPd, CoPt, YCo, LaCo, PrCo, NdCo, SmCo, CoFeB, BiMn, or NiMnSb, and alloys thereof with one or more of B, Al, Zr, Hf, Nb, Ta, Cr, Mo, Pd, or Pt;
the magnetic fixed layer is made of synthetic ferromagnetic or ferrimagnetic materials and comprises an artificial multilayer structure of Co/Ir, Co/Pt, Co/Pd, CoCr/Pt, Co/Au or Ni/Co stacked by 3d/4d/4f/5d/5 f/rare earth metal layers;
the magnetic pinned layer is made of a half-metallic ferromagnetic material, including a form of XYZ or X2Heusler alloys of YZ, where X is one or more of Mn, Fe, Co, Ni, Pd or Cu, Y is one or more of Ti, V, Cr, Mn, Fe, Co or Ni, Z is one or more of Al, Ga, In, Si, Ge, Sn or Sb;
the magnetic pinned layer is made of synthetic antiferromagnetic material including a ferromagnetic layer and a spacer layer, wherein the ferromagnetic layer includes Fe, Co, CoFe, Ni, CoCrPt, CoFeB, (Co/Ni) p, (Co/Pd) m or (Co/Pt) n, m, n, p refer to the number of repetitions of the multilayer stack, and the spacer layer material includes one or more of Nb, Ta, Cr, Mo, W, Re, Ru, Os, Rh, Ir, Pt, Cu, Ag, or Au;
the magnetic pinned layer is made of an antiferromagnetic metal including Mn2Au, CuMnAs, FeMn, IrMn and PtMn.
Furthermore, the thickness of the magnetic pinned layer should be significantly greater than that of the antiferromagnetic free layer, and the magnetic pinned layer can also pin the magnetic moment through the external antiferromagnetic pinning layer.
Further, the insulating layer is oxide, nitride or oxynitride, and comprises one or more of Fe, Co, Ni, Mn, Cr, Pd, Ag, Mg, B, Al, Ca, Sr, La, Ti, Hf, V, Ta, Cr, W, Ru, Cu, In, Si or Eu; or selected from SiC, C or ceramic materials; the thickness is 0.2 nm-5.0 nm.
Furthermore, the buffer layer is made of metal and comprises one or more of Nb, Ta, Cr, Mo, W, Re, Ru, Os, Rh, Ir, Pt, Cu, Ag or Au, and the thickness of the buffer layer is 0.0-5.0 nm.
Further, the non-magnetic heavy metal layer and the heavy metal buffer layer comprise one or more of Nb, Mo, Ru, Re, Os, Ir, Au, Tl, Pb, Bi, Au, Pt, Pd, Ta, W, TaN or WN; the thickness of the metal film is 0.2 nm-2.0 nm and is not more than 5 times of the spin diffusion length of the non-magnetic heavy metal; the conductivity of the adopted material is 5 times higher than that of the antiferromagnetic free layer material.
Furthermore, the magnetic random access memory based on the antiferromagnetic structure comprises the antiferromagnetic structure and six electrodes, wherein the first electrode and the second electrode are respectively arranged on the outer side of the magnetic fixed layer and the outer side of the nonmagnetic heavy metal layer; the third electrode and the fourth electrode are arranged on the side surface of the non-magnetic heavy metal layer in pair, and the direction of the third electrode and the fourth electrode forms an angle of 45 degrees with one easy magnetization direction along the antiferromagnetic free layer; the fifth electrode and the sixth electrode are arranged on the side surface of the buffer layer between the insulating layer and the antiferromagnetic free layer, and the direction of the fifth electrode and the sixth electrode is approximately vertical to the connecting line of the third electrode and the fourth electrode.
Further, the electrode material is a metal or alloy material, and comprises one or more of Li, Mg, Al, Ca, Sc, Ti, V, Mn, Cu, Zn, Ga, Ge, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Ba, Hf, Ta, W, Re, Os, Ir, Pt, Au, Tl, Pb, Bi, Po, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm or Yb;
the electrode material is a carbon-based conductive material, and comprises graphite, carbon nanotubes or bamboo charcoal.
Compared with the prior art, the invention has the following technical effects:
in the invention, the write current respectively transversely flows through the two heavy metal layers simultaneously, the current density which independently flows through each heavy metal layer is lower, and the magnetization switching critical current density is about 1x107Acm-2～1x108Acm-2. The spin transfer torque generated by using the longitudinal current alone controls the switching critical current density of the F-MRAM based on the AF-MTJ cell to be about 1x108Acm-2～1x109Acm-2。
In the invention, the transverse current density and direction applied to the non-magnetic heavy metal layer are changed, and the current applied to the heavy metal buffer layer in the AF-MTJ unit is fixed and unchangeable. The SOT effect generated by the current applying method is used for controlling the AF-MTJ, so that the design of the AF-MRAM based on the AF-MTJ can be simplified, the thickness and the device volume of the AF-MTJ are reduced, and the arrangement density of a memory cell array is improved.
In the invention, a write current flows through two heavy metal layers transversely, a spin current is generated by a spin Hall effect and flows to an antiferromagnetic free layer of an AF-MTJ unit, a spin track pitch acts on the antiferromagnetic free layer to enable an antiferromagnetic sequence of the antiferromagnetic free layer to be turned, when the antiferromagnetic sequence of the antiferromagnetic free layer of the AF-MTJ unit and a magnetic sequence of a fixed layer form a small included angle, the write current is marked as data '1', and when the antiferromagnetic sequence of the antiferromagnetic free layer of the AF-MTJ unit and the magnetic sequence of the fixed layer form a large included angle, the write current is marked as data '0'. The read current flows longitudinally through the AF-MTJ cell, reading the stored information. The process of reading data does not affect the process of writing information, and the stored information is not damaged, so that the information does not need to be written again after reading, and the reading and writing efficiency is effectively improved.
In the invention, the working frequency of the SOT-AF-MRAM device is in THz magnitude and is far higher than the working frequency of GHz magnitude of the F-MRAM.
Drawings
FIG. 1 shows a schematic diagram of an antiferromagnetic tunneling structure (AF-MTJ structure 10) based on the spin Hall effect, which is not drawn to scale, along with any other illustrations of the present invention.
FIG. 2 shows a schematic diagram of an SOT-AF-MRAM based on an antiferromagnetic tunneling structure for the spin Hall effect. Wherein the respective electrodes located laterally are connected to the heavy metal layer only.
FIG. 3(a) shows a process for writing data "1" by an SOT-AF-MRAM based on an antiferromagnetic tunneling structure for spin Hall effect; FIG. 3(b) shows a data "1" read schematic on an anti-ferromagnetic free layer based SOT-AF-MRAM.
FIG. 4(a) shows a process for writing data "0" by an SOT-MRAM based on an antiferromagnetic tunneling structure for spin Hall effect; FIG. 4(b) shows a data "0" read schematic on an anti-ferromagnetic free layer based SOT-AF-MRAM.
FIG. 5 shows a theoretical simulation plot of antiferromagnetic sequence changes over time during writing according to one embodiment of the present disclosure.
Detailed Description
The invention is further described below with reference to the accompanying drawings:
referring to fig. 1 to 5, an antiferromagnetic structure and a magnetic random access memory based on the antiferromagnetic structure, fig. 1 shows a device of an antiferromagnetic tunneling structure based on the spin hall effect according to the present disclosure, and fig. 1 and any other figures of the present disclosure are not drawn to scale. As shown in fig. 1, the device of the antiferromagnetic structure is composed of a magnetic pinned layer 16, a buffer layer 15, an insulating layer 14, a heavy metal buffer layer 13, an antiferromagnetic free layer 12 and a non-magnetic heavy metal layer 11, the transverse linearity of the magnetic device is 1 nm-100 nm, each component can have different shapes as required, the voltage regulation and control range of an external electric field is 0.1V-15V, the thickness of the insulating layer is 0.3 nm-5.0 nm, the thickness of the antiferromagnetic free layer 12 is 0.2 nm-5.0 nm, the thickness of the buffer layer 15 is 0.0 nm-5.0 nm, and the thickness of the magnetic pinned layer 16 is significantly greater than that of the antiferromagnetic free layer 12 or the magnetic sequence is pinned by an external pinning layer (not shown). The magnetic sequence direction of the magnetic pinned layer 16 is shown in FIG. 1 as being in the antiferromagnetic free layer film and the magnetic sequence direction of the antiferromagnetic free layer 12 is shown as being in the antiferromagnetic free layer film. In some embodiments, the magnetic tunnel junction device may have a circular, elliptical, rectangular, square, or any other shape in cross-section as desired.
In this embodiment, the magnetic pinned layer 16, the antiferromagnetic free layer 12, the buffer layer 15, and the heavy metal buffer layer 13 and the nonmagnetic heavy metal layer 11 are all conductive.
In this embodiment, the magnetic pinned layer 16 is made of a ferromagnetic or ferrimagnetic metal and alloys thereof selected from Fe, Co, Ni, Mn, NiFe, FePd, FePt, CoFe, CoPd, CoPt, YCo, LaCo, PrCo, NdCo, SmCo, CoFeB, BiMn or NiMnSb, and one or more of B, Al, Zr, Hf, Nb, Ta, Cr, Mo, Pd or Pt.
In other embodiments, the magnetic pinned layer 16 is made of synthetic ferromagnetic or ferrimagnetic material selected from, but not limited to, 3d/4d/4f/5d/5 f/rare earth metal layer stacked artificial multilayer structure Co/Ir, Co/Pt, Co/Pd, CoCr/Pt, Co/Au or Ni/Co.
Or from a semi-metallic ferromagnetic material comprising a Heusler alloy In the form of XYZ or X2YZ, where X is selected from, but not limited to, one or more of Mn, Fe, Co, Ni, Pd or Cu, Y is selected from, but not limited to, one or more of Ti, V, Cr, Mn, Fe, Co or Ni, and Z is selected from, but not limited to, one or more of Al, Ga, In, Si, Ge, Sn or Sb.
Or a synthetic antiferromagnetic material including a ferromagnetic layer and a spacer layer, wherein the ferromagnetic layer material is selected from, but not limited to, Fe, Co, CoFe, Ni, CoCrPt, CoFeB, (Co/Ni) p, (Co/Pd) m or (Co/Pt) n, m, n, p referring to the number of repetitions of the multilayer stack, and the spacer layer material is selected from, but not limited to, one or more of Nb, Ta, Cr, Mo, W, Re, Ru, Os, Rh, Ir, Pt, Cu, Ag, or Au.
Or made of an antiferromagnetic material selected from Mn2Au, CuMnAs, FeMn, IrMn and PtMn.
In the present embodiment, the insulating layer 14 is an insulating tunnel barrier layer, and may be an oxide, nitride, or oxynitride, and the constituent elements are selected from one or more of Fe, Co, Ni, Mn, Cr, Pd, Ag, Mg, B, Al, Ca, Sr, La, Ti, Hf, V, Ta, Cr, W, Ru, Cu, In, Si, or Eu.
In other embodiments, the insulating layer 14 is selected from, but not limited to, SiC, C, or a ceramic material.
In the present embodiment, the buffer layer 15 includes one or more elements selected from Nb, Ta, Cr, Mo, W, Re, Ru, Os, Rh, Ir, Pt, Cu, Ag, and Au.
In this embodiment, the antiferromagnetic free layer 12 material is selected from tetragonal Mn2Au and CuMnAs.
In the present embodiment, the material of the non-magnetic heavy metal layer 11 and the heavy metal buffer layer 13 is selected from, but not limited to, one or more of Nb, Mo, Ru, Re, Os, Ir, Au, Tl, Pb, Bi, Au, Pt, Pd, Ta, W, TaN, or WN.
FIG. 2 shows an SOT-AF-MRAM device based on an antiferromagnetic free layer. An MRAM device is comprised of magnetic structure 10, first electrode 21, second electrode 22, and electrodes 23, 24, 25, and 26. The device includes a magnetic tunnel junction 10 based on an antiferromagnetic free layer 12 including a magnetic pinned layer 16, an antiferromagnetic free layer 12 and an insulating layer 14 between the magnetic pinned layer 16 and the antiferromagnetic free layer 12, a heavy metal buffer layer 13 between the antiferromagnetic free layer 12 and the insulating layer 14 and a buffer layer 15 between the magnetic pinned layer 16 and the insulating layer 14. The magnetic ordering directions of the magnetic pinned layer 16 and the antiferromagnetic free layer 12 are parallel to the antiferromagnetic free layer film plane.
The first electrode 21 is in contact with the outside of the magnetic pinned layer 16 of the magnetic tunnel junction, the second electrode 22 is in contact with the outside of the nonmagnetic heavy metal layer 11, the third electrode 23 and the fifth electrode 25 are paired and are in contact with the side surface of the nonmagnetic heavy metal layer 11, respectively, the fourth electrode 24 is opposite to the sixth electrode 26 and is in contact with the side surface of the heavy metal buffer layer 13, and the direction from the third electrode 23 to the fifth electrode 25 is nearly perpendicular to the direction from the fourth electrode 24 to the sixth electrode 26. The direction in which the third electrode 23 points to the fifth electrode 25 and the direction in which the fourth electrode 24 points to the sixth electrode 26 are nearly parallel or perpendicular to the direction of the magnetic sequence of the antiferromagnetic free layer 12, i.e., the direction of the thick arrow shown in the antiferromagnetic free layer 12.
In this embodiment, the electrode material is a metal or alloy material selected from, but not limited to, one or more of Li, Mg, Al, Ca, Sc, Ti, V, Mn, Cu, Zn, Ga, Ge, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Ba, Hf, Ta, W, Re, Os, Ir, Pt, Au, Tl, Pb, Bi, Po, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, or Yb;
in some embodiments, the electrode material is a carbon-based conductive material selected from, but not limited to, graphite, carbon nanotubes, or bamboo charcoal.
When writing is realized by applying a transverse current to the non-magnetic heavy metal 11 alone, the transverse current density is greater than a critical value jc; when writing is realized by simultaneously applying transverse currents to the nonmagnetic heavy metal 11 and the heavy metal buffer layer 13, the sum of the transverse current densities is greater than a critical value jc but the two currents can be respectively smaller than the critical value jc, wherein jc is 1 multiplied by 107Acm < -2 > to 1 multiplied by 108Acm < -2 >; the transverse current is direct current or alternating current. In order to ensure that the lateral current mainly flows through the nonmagnetic heavy metal 11 and the heavy metal buffer layer 13, it is necessary that the resistivity of the antiferromagnetic free layer 12 is not less than 5 times the resistivity of the nonmagnetic heavy metal 11 and the heavy metal buffer layer 13.
FIG. 3(a) shows a process of writing data "1" in an SOT-AF-MRAM device based on an antiferromagnetic free layer 12 under a lateral current: meanwhile, transverse current is applied to the nonmagnetic heavy metal 11 and the heavy metal buffer layer 13, and the spin current generated by the spin hall effect passes through the antiferromagnetic free layer 11 of the AF-MTJ and reverses the magnetic sequence thereof, thereby completing the writing of data "1". Wherein VDD1, VDD2 are high level, GND1 and GND2 are low level, after the magnetic sequence of the antiferromagnetic free layer 12 is reversed, the resistance state of AF-MTJ is different from that before reversal, the magnetic structure acts on the current and completes the writing of data "1"; fig. 3(b) shows a schematic diagram of reading the data of the magnetic tunnel junction under a small current, wherein VDD is high level, GND is low level, and the reading current flows in from VDD and then flows out from GND through the magnetic structure, so as to read out the current data "1".
FIG. 4(a) shows a process of writing data "0" in an SOT-AF-MRAM device based on an antiferromagnetic free layer 12 under a lateral current: meanwhile, transverse current is applied to the nonmagnetic heavy metal 11 and the heavy metal buffer layer 13, the magnetic sequence of the antiferromagnetic free layer 11 is inverted, and data writing of '0' is completed. Wherein VDD1, VDD2 are high level, GND1 and GND2 are low level, after the magnetic sequence of the antiferromagnetic free layer 12 is reversed, the resistance state of AF-MTJ is different from that before reversal, the magnetic structure acts on the current and completes the writing of data "0"; fig. 4(b) shows a schematic diagram of reading the data of the magnetic tunnel junction under a small current, wherein VDD is high level, GND is low level, and the reading current flows in from VDD and then flows out from GND through the magnetic structure, so as to read out the present data "0".
The spin current Is generated due to the spin hall effect flows into the AF-MTJ unit perpendicularly to the write current Ic. The injected current, the spin current and the spin orientation satisfy the relationship:
wherein Jc represents the write current density, Js represents the pure spin current density generated by the spin hall effect, represents the sigma electron spin direction, and θ sh represents the spin hall angle, so as to describe the strength of the spin hall effect in a specific material, i.e. the conversion ratio of the current introduced into the heavy metal to the generated spin current. AF-TMJ as shown in FIG. 3(a) is grown in z direction, the antiferromagnetic free layer is located under the heavy metal buffer layer and on top of the nonmagnetic heavy metal layer, if write current 1 flowing through the nonmagnetic heavy metal layer is in y direction, spin current Js1 flowing into the antiferromagnetic free layer is in z direction, and its polarization direction is in x direction; if the write current 2 flowing through the heavy metal buffer layer is in the-x direction, the spin current Js2 flowing into the antiferromagnetic free layer is in the-z direction and its polarization direction is in the-y direction; together, spin current Js1 and spin current Js2 effect a flip in the magnetic order of the antiferromagnetic free layer from azimuth phi 45 deg. to phi 135 deg. in the case where the sum of write current 1 and write current 2 is greater than the critical current.
The precessional process of antiferromagnetic magnetic sequences under the influence of spin currents can be described theoretically by a set of coupled Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equations.
Wherein
In order to have a net magnetic moment in dynamics,
is an antiferromagnetic vector (Nahr vector), gamma is a gyromagnetic ratio,
is an anisotropic field, αmAnd alphanThe magnetic damping coefficients of the dynamic net magnetic moment and the antiferromagnetic vector respectively,
and
torque applied to the dynamic net magnetic moment and the antiferromagnetic vector, respectively, HEIs an exchange field. Its precession frequency
Considering the exchange field HEIn the order of 1000T and an anisotropy field HnOn the order of 1T, the precession frequency of a typical antiferromagnetic material is on the order of THz.
In contrast, the spin precession of a ferromagnetic material under the influence of spin current is described by an LLGS equation.
Wherein
Is a ferromagnetic anisotropy field, αmIs a ferromagnetic resistorThe damping coefficient, other parameters are in accordance with equation (1). Taking into account a typical ferromagnetic anisotropy field HmOn the order of 0.01T, typical precession frequencies of ferromagnetic materials are on the order of GHz.
It can be seen that the laws of motion of ferromagnetic and antiferromagnetic materials under the action of spin current are fundamentally different.
The anisotropy field of an antiferromagnetic material can be derived from the magnetocrystalline anisotropy energy (MCA) of the material.
The magnetocrystalline anisotropy energy of the antiferromagnetic material in the Pt/Mn2Au/Pt film structure shown in FIG. 5 is represented by the formula U (θ, φ) K2⊥sin2θ+K2⊥sin4θ+K4||sin4θ cos4 φ (Physical Review B2010; 81 (21): 212409), where K2⊥＝-2.44meV、K4⊥0.02meV and K4||0.01meV is the uniaxial anisotropy constant, fourth order out-of-plane anisotropy constant, and fourth order in-plane anisotropy constant, respectively, per formula unit.
The theoretical simulation of the time-dependent change in antiferromagnetic vector for the Pt/Mn2Au/Pt film structure shown in FIG. 5 uses parameters that depend on the anisotropy field as described above, among others: hE＝1000T、αm＝0.5、αnLayer thickness 0.05 and Mn2Au was 1.7 nm.
There are two input currents in the theoretical simulation of the Pt/Mn2Au/Pt film structure shown in FIG. 5. In the process that the antiferromagnetic vector is turned from a small angle to a large angle (a solid line), the current Jc of the Pt film on the right side (the non-magnetic heavy metal layer film 11) is along the y direction, and the current of the Pt film on the left side (the heavy metal buffer layer film) is along the-x direction. The input current in the left Pt film was half that in the right Pt film. In the process that the antiferromagnetic vector is turned from a large angle to a small angle (a dotted line), the current Jc of the Pt film (the non-magnetic heavy metal layer film) on the right side is along the-y direction, and the current of the Pt film (the heavy metal buffer layer film 13) on the left side is along the-x direction. The input current in the left Pt film was half that in the right Pt film.
The anti-ferromagnetic vector can be turned from a large angle to a small angle under the condition that the input current theta shJc is 2 multiplied by 1012A/m2, and the anti-ferromagnetic vector can be turned from the small angle to the large angle under the condition that the input current theta shJc is-2 multiplied by 1012A/m 2.
The overturning process can be realized when the input current theta shJc is between 4 x 1011A/m2 and 4 x 1013A/m2, and the time for realizing the overturning under the condition of large current is less.
By adopting the method to realize the SOT-AF-MRAM, the circulation overturning of the antiferromagnetic vector can be realized only by changing the direction of the current in the nonmagnetic heavy metal layer film 11.
In contrast, an antiferromagnetic tunnel junction magnetic random access memory (NSOT-AF-MRAM) that implements a circular inversion by the NSOT method requires two independently controlled currents to implement (Nature Communication 2018; 9: 348).
A writing method of a spin-orbit torque-antiferromagnetic magnetic random access memory device:
the writing is realized by simultaneously and independently applying transverse current to the non-magnetic heavy metal layer and the heavy metal buffer layer in the tunnel junction unit, the direction of the current independently applied to the heavy metal buffer layer in the tunnel junction unit is fixed, the current density is 0.01-0.99 times of the current density independently applied to the non-magnetic heavy metal layer, the transverse current density is greater than a critical value jc, wherein jc is 1107Acm-2～1 108Acm-2(ii) a The transverse current is direct current or alternating current.
The invention discloses a magnetic structure based on heavy metal and Antiferromagnetic material, and Spin-orbit torque-Antiferromagnetic magnetic random access memory (SOT-AF-MRAM) for data erasing and writing by using Spin-orbit torque, which comprises a magnetic fixed layer, a common buffer layer, an insulating layer, a heavy metal buffer layer, an Antiferromagnetic free layer and a nonmagnetic heavy metal layer, wherein the Antiferromagnetic free layer can regulate and control the Antiferromagnetic order (Antiferromagnetic order parameter) by applying two independent transverse currents in the nonmagnetic heavy metal layer and the heavy metal buffer layer. The device is characterized in that the current applied in the heavy metal buffer layer is fixed, and the mutual transformation of the magnetic sequence of the magnetic fixed layer of the magnetic structure and the anti-ferromagnetic sequence of the anti-ferromagnetic free layer between two different included angles can be realized only by changing the current applied on the non-magnetic heavy metal layer. The data writing device has the advantages of stable data writing under the action of current, simple structure, low power consumption, high speed, radiation resistance and non-volatility.
The present invention is not limited to the above-mentioned embodiments, and based on the technical solutions disclosed in the present invention, those skilled in the art can make some substitutions and modifications to some technical features without creative efforts according to the disclosed technical contents, and these substitutions and modifications are all within the protection scope of the present invention.
Claims (10)
1. An antiferromagnetic structure comprising a magnetic pinned layer, a buffer layer, an insulating layer, a heavy metal buffer layer, an antiferromagnetic free layer and a non-magnetic heavy metal layer; the magnetic fixing layer, the buffer layer, the insulating layer, the heavy metal buffer layer, the antiferromagnetic free layer and the nonmagnetic heavy metal laminated layer are arranged, wherein the buffer layer is positioned between the magnetic fixing layer and the insulating layer, the heavy metal buffer layer is positioned between the insulating layer and the antiferromagnetic free layer, and the nonmagnetic heavy metal layer is horizontally arranged below the antiferromagnetic free layer; the spin orbit torque generated by the current transversely flowing through the nonmagnetic heavy metal layer and the heavy metal buffer layer is used for regulating the antiferromagnetic order of the antiferromagnetic free layer.
2. An antiferromagnetic structure as recited in claim 1, wherein the magnetic order of the magnetic pinned layer and the antiferromagnetic free layer is parallel to the antiferromagnetic free layer in-plane; the transverse linearity of the magnetic tunnel junction is 1 nm-50 nm, and different layers have different shapes and linearities; the magnetic sequence of the current regulation antiferromagnetic free layer and the magnetic sequence of the magnetic fixed layer are in a state of being parallel, antiparallel or different included angles.
3. An antiferromagnetic structure as recited in claim 1, wherein the antiferromagnetic free layer material is tetragonal Mn-Au2Au or CuMnAs with the thickness of 0.2 nm-5 nm.
4. An antiferromagnetic structure as recited in claim 1, wherein the magnetic pinned layer is made of ferromagnetic or ferrimagnetic or antiferromagnetic metals and alloys thereof including Fe, Co, Ni, Mn, NiFe, FePd, FePt, CoFe, CoPd, CoPt, YCo, LaCo, PrCo, NdCo, SmCo, CoFeB, BiMn or NiMnSb, and alloys thereof with one or more of B, Al, Zr, Hf, Nb, Ta, Cr, Mo, Pd or Pt;
the magnetic fixed layer is made of synthetic ferromagnetic or ferrimagnetic materials and comprises an artificial multilayer structure of Co/Ir, Co/Pt, Co/Pd, CoCr/Pt, Co/Au or Ni/Co stacked by 3d/4d/4f/5d/5 f/rare earth metal layers;
the magnetic pinned layer is made of a half-metallic ferromagnetic material, including a form of XYZ or X2Heusler alloys of YZ, where X is one or more of Mn, Fe, Co, Ni, Pd or Cu, Y is one or more of Ti, V, Cr, Mn, Fe, Co or Ni, Z is one or more of Al, Ga, In, Si, Ge, Sn or Sb;
the magnetic pinned layer is made of synthetic antiferromagnetic material including a ferromagnetic layer and a spacer layer, wherein the ferromagnetic layer includes Fe, Co, CoFe, Ni, CoCrPt, CoFeB, (Co/Ni) p, (Co/Pd) m or (Co/Pt) n, m, n, p refer to the number of repetitions of the multilayer stack, and the spacer layer material includes one or more of Nb, Ta, Cr, Mo, W, Re, Ru, Os, Rh, Ir, Pt, Cu, Ag, or Au;
the magnetic pinned layer is made of an antiferromagnetic metal including Mn2Au, CuMnAs, FeMn, IrMn and PtMn.
5. An antiferromagnetic structure as recited in claim 4, wherein the thickness of the magnetic pinned layer is substantially greater than the thickness of the antiferromagnetic free layer, the magnetic pinned layer also pinning the magnetic moment by circumscribing the antiferromagnetic pinning layer.
6. An antiferromagnetic structure as recited In claim 1, wherein the insulator layer is an oxide, nitride or oxynitride comprising one or more of Fe, Co, Ni, Mn, Cr, Pd, Ag, Mg, B, Al, Ca, Sr, La, Ti, Hf, V, Ta, Cr, W, Ru, Cu, In, Si or Eu; or selected from SiC, C or ceramic materials; the thickness is 0.2 nm-5.0 nm.
7. An antiferromagnetic structure as recited in claim 1, wherein the buffer layer is a metal comprising one or more of Nb, Ta, Cr, Mo, W, Re, Ru, Os, Rh, Ir, Pt, Cu, Ag, or Au and has a thickness of 0.0nm to 5.0 nm.
8. An antiferromagnetic structure as recited in claim 1, wherein the nonmagnetic heavy metal layer and the heavy metal buffer layer comprise one or more of Nb, Mo, Ru, Re, Os, Ir, Au, Tl, Pb, Bi, Au, Pt, Pd, Ta, W, TaN or WN; the thickness of the metal film is 0.2 nm-2.0 nm and is not more than 5 times of the spin diffusion length of the non-magnetic heavy metal; the conductivity of the adopted material is 5 times higher than that of the antiferromagnetic free layer material.
9. A magnetic random access memory based on an antiferromagnetic structure, wherein the antiferromagnetic structure based on any one of claims 1 to 8 comprises an antiferromagnetic structure and six electrodes, the first electrode and the second electrode being respectively disposed outside the magnetic pinned layer and outside the nonmagnetic heavy metal layer; the third electrode and the fourth electrode are arranged on the side surface of the non-magnetic heavy metal layer in pair, and the direction of the third electrode and the fourth electrode forms an angle of 45 degrees with one easy magnetization direction along the antiferromagnetic free layer; the fifth electrode and the sixth electrode are arranged on the side surface of the buffer layer between the insulating layer and the antiferromagnetic free layer, and the direction of the fifth electrode and the sixth electrode is approximately vertical to the connecting line of the third electrode and the fourth electrode.
10. An antiferromagnetic structure based magnetic random access memory as recited In claim 9, wherein the electrode material is a metal or alloy material including one or more of Li, Mg, Al, Ca, Sc, Ti, V, Mn, Cu, Zn, Ga, Ge, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Ba, Hf, Ta, W, Re, Os, Ir, Pt, Au, Tl, Pb, Bi, Po, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, or Yb;
the electrode material is a carbon-based conductive material, and comprises graphite, carbon nanotubes or bamboo charcoal.
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